KR101589745B1 - Organic Light Emitting Display Device - Google Patents

Abstract

An embodiment of the present invention is a panel comprising: a panel including subpixels located on one side of a first substrate; and a second substrate bonded together with the first substrate; An electrode section including an interlayer film located on the subpixels, a first electrode section positioned on the interlayer film, and a second electrode section positioned on one surface of the second substrate facing the subpixels; And a sensing unit connected to the electrode unit.

Organic electroluminescent display device, sensing, touch

Description

[0001] The present invention relates to an organic light emitting display device,

An embodiment of the present invention relates to an organic light emitting display.

An organic electroluminescent device used in an organic electroluminescent display device is a self-luminous device in which a light emitting layer is formed between two electrodes located on a substrate.

In addition, the organic light emitting display device may include a top emission type, a bottom emission type, or a dual emission type depending on a direction in which light is emitted. It is divided into a passive matrix and an active matrix depending on the driving method.

The subpixel disposed in the organic light emitting display includes a transistor portion including a switching transistor, a driving transistor and a capacitor, and an organic light emitting diode including a lower electrode connected to the driving transistor included in the transistor portion, an organic light emitting layer, and an upper electrode .

In the organic light emitting display, when a scan signal, a data signal, a power supply, and the like are supplied to a plurality of subpixels arranged in a matrix form, the selected subpixel emits light, thereby displaying an image.

An embodiment of the present invention provides an organic light emitting display device capable of adding a touch screen panel function using an electrode portion formed in a panel. In addition, embodiments of the present invention provide an organic electroluminescent display device capable of realizing a micro-cavity effect together with a touch screen panel. The embodiment of the present invention also realizes a resistive touch screen panel capable of reducing manufacturing cost.

According to an aspect of the present invention, there is provided a panel comprising: a panel including subpixels positioned on one side of a first substrate and a second substrate bonded together with a first substrate; An electrode section including an interlayer film located on the subpixels, a first electrode section positioned on the interlayer film, and a second electrode section positioned on one surface of the second substrate facing the subpixels; And a sensing unit connected to the electrode unit.

The sensing unit may sense the touched position by recognizing a change in resistance between the first electrode unit and the second electrode unit when the user touches the panel.

The first electrode portion and the second electrode portion may be respectively dividedly formed in the corresponding layer.

One of the first electrode portion and the second electrode portion may be formed in a divided manner in the layer and the other may be formed in common in the layer.

The first electrode portion and the second electrode portion may be formed in common in the respective layers.

The electrode portion may include a spacer attached to the first electrode portion or the second electrode portion.

The electrode portion may include a projection positioned between the second substrate and the second electrode portion and projecting the second electrode portion.

The second electrode portion may be patterned to expose the light emitting region of the subpixels.

The interlayer film may be an insulating film or an organic film.

The interlayer film may have a different thickness depending on the emission color of the sub-pixels.

An embodiment of the present invention provides an organic light emitting display device capable of adding a touch screen panel function using an electrode portion formed in a panel. In addition, the embodiment of the present invention has the effect of realizing a micro-cavity effect together with a touch screen panel. Further, the embodiment of the present invention has the effect of realizing a resistive touch screen panel which can reduce manufacturing cost.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a schematic block diagram of an organic light emitting display according to an exemplary embodiment of the present invention, and FIG. 2 is a block diagram illustrating a sensing unit. Referring to FIG.

Referring to FIG. 1, the organic light emitting display includes a panel PNL, a scan driver SDRV, a data driver DDRV, and a sensing unit TSC.

The panel (PNL) includes subpixels located on one side of the first substrate and a second substrate bonded together with the first substrate. In the panel (PNL), an interlayer film located on the subpixels, a first electrode portion positioned on the interlayer film, and a second electrode portion positioned on one surface of the second substrate, the surface facing the subpixels .

The scan driver SDRV supplies a scan signal to the sub-pixels included in the panel PNL. The data driver DDRV supplies the data signals to the sub-pixels included in the panel PNL.

Subpixels included in the panel (PNL) include a switching transistor driven by a scan signal, a capacitor for storing a data signal as a data voltage, a driving transistor driven by a data voltage stored in the capacitor, and an organic Light emitting diodes. When a scan signal and a data signal are supplied from the scan driver SDRV and the data driver DDRV, the subpixels supplied thereto emit light, and the panel PNL can display an image corresponding thereto.

1 and 2, the sensing portion TSC is connected to an electrode portion located in the panel PNL. When the user touches the panel (PNL), the sensing unit senses the touched position by recognizing the resistance change between the first electrode unit and the second electrode unit located in the panel (PNL). For example, the sensing unit TSC may include, but is not limited to, a signal input unit SW, a signal amplification unit AMP, a signal conversion unit ADC, and a signal detection unit (LUT). The signal input unit SW receives signals from the electrode units X and Y positioned in the panel PNL. The signal amplifying unit AMP amplifies the signal transmitted to the signal input unit SW. The signal converter (ADC) converts the analog input signal to digital. The signal detecting unit (LUT) detects coordinate data of the area touched by the user using the digitally converted signal, and transmits the detected coordinate data to the apparatus for using the coordinate data.

As described above, the sensing unit TSC can sense the touched position by recognizing the resistance change of the electrode units X and Y positioned in the panel PNL. The first electrode unit and the second electrode unit included in the electrode unit The structure of the two-electrode portion may be as follows.

Figs. 3 to 6 are diagrams showing the structure of an electrode part positioned in the panel. Fig.

Referring to FIG. 3, the first electrode unit X0... X3 and the second electrode unit Y0... Y3 included in the electrode unit may have a structure have.

4, the first electrode units X0... X3 included in the electrode unit are divided and formed in the corresponding layers, and the second electrode units Ym are formed in common in the corresponding layers. Can have a formed structure.

5, the first electrode unit Xn included in the electrode unit is formed in common in the corresponding layer, and the second electrode unit Y0 ... Y3 is formed in the corresponding layer in the corresponding layer. Can have a formed structure.

Referring to FIG. 6, the first electrode unit Xn and the second electrode unit Ym included in the electrode unit may have a structure commonly formed in the corresponding layer.

As shown in Figs. 3 to 6, the electrode portion may be positioned in the panel PNL in various structures. In the description of the embodiment, the first electrode portion is located in the X-axis direction and the second electrode portion is located in the Y-axis direction. However, the present invention is not limited thereto.

Hereinafter, the subpixels and electrode portions located on the panel will be described in more detail with reference to the cross-sectional views.

FIG. 7 is a cross-sectional view of a panel according to an embodiment of the present invention, FIG. 8 is an example of a hierarchical structure of an organic light emitting diode, and FIG. 9 is a sectional view of a panel for explaining a micro cavity effect according to an interlayer film structure.

Referring to FIG. 7, the panel may include a subpixel positioned on one side of the first substrate 100a and a second substrate 100b bonded and sealed with the first substrate 100a. The first substrate 100a and the second substrate 100b may be sealed together by an adhesive member 180. [ A polarizing plate 190 may be attached on the other surface of the second substrate 100b, which is a display surface of the panel. Although not shown, the polarizing plate 190 may include, but is not limited to, a retardation film and a polarizing film disposed on the retardation film.

The subpixel may include, but is not limited to, a transistor unit T including a switching transistor, a driving transistor, and a capacitor, and an organic light emitting diode D connected to the transistor unit T. When the transistors included in the transistor unit T are of the Batam gate type, the driving transistors 110, 112, 113, 114a and 114b and the organic light emitting diode D may be as follows.

A gate 110 is positioned on one surface of the first substrate 100a. The gate 110 may be formed of any one selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Ne, Or an alloy thereof. The gate 110 may be formed of a material selected from the group consisting of Mo, Al, Cr, Au, Ti, Ni, Ne, And may be a multilayer composed of any one selected or an alloy thereof. In addition, the gate 110 may be a double layer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

A first insulating layer 111 is located on the gate 110. The first insulating layer 111 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto.

An active layer 112 is located on the first insulating film 111. The active layer 112 may comprise amorphous silicon or polycrystalline silicon crystallized therefrom. The active layer 112 may include a source region, a channel region, and a drain region. In addition, the ohmic contact layer 113 may be located on the active layer 112.

On the ohmic contact layer 113, a source 114a and a drain 114b, which are respectively connected to the source region and the drain region, are located. The source 114a and the drain 114b may be a single layer or a multilayer. In the case where the source 114a and the drain 114b are a single layer, a metal such as Mo, Al, Cr, Au, Ti, Ni, (Cu), or an alloy thereof. Alternatively, when the source 114a and the drain 114b are multilayered, they may be formed of a triple layer of molybdenum / aluminum-neodymium, molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum.

A second insulating film 115 is located on the source 114a and the drain 114b. The second insulating layer 115 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto.

A shield metal may be disposed on the second insulating layer 115. The shield metal 116 may be connected to the source 114a or the drain 114b, which may serve to protect the transistor from external interference.

A third insulating film 117 is formed on the second insulating film 115. The third insulating film 117 may be a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a multilayer thereof, but is not limited thereto.

A lower electrode 120 connected to the source 114a or the drain 114b is positioned on the third insulating film 117. [ The lower electrode 120 may be selected as a cathode or an anode. When the lower electrode 120 is selected as the cathode, the material of the cathode may be any one of aluminum (Al), aluminum alloy (Al alloy), and aluminum nitride (AlNd). When the lower electrode 120 is selected as a cathode, it is advantageous to form the material of the cathode from a material having high reflectivity.

On the lower electrode 120, a bank layer 130 having an opening exposing a part of the lower electrode 120 is positioned. The bank layer 130 may include, but is not limited to, organic materials such as benzocyclobutene (BCB) resin, acrylic resin or polyimide resin.

The organic light emitting layer 140 is disposed on the lower electrode 120. The organic light emitting layer 140 may include a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and an electron injecting layer. Referring to FIG. 8, the hole injection layer 140a may function to smoothly inject holes, and may be formed of a material such as CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (N, N-dinaphthyl-N, N'-diphenyl benzidine), but the present invention is not limited thereto. The hole transport layer 140b serves to smooth the transport of holes and includes a hole transport material such as NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-tris (N-3-methylphenyl-N-phenylamino) The light emitting layer 140c may include a material that emits red, green, blue, and white light, and may be formed using a phosphorescent material or a fluorescent material. The light emitting layer 140c may include, for example, In the case of emitting red light, a host material containing CBP (carbazole biphenyl) or mCP (1,3-bis (carbazol-9-yl)), PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate iridium) A dopant comprising at least one selected from the group consisting of PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) (DBM) 3 (Phen) or perylene. Alternatively, when the light emitting layer 140c emits green light, the light emitting layer 140c may be formed of CBP or mPCP and may comprise a phosphorescent material comprising a dopant material comprising Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium), alternatively Alq3 (tris (8-hydroxyquinolino ) aluminum, but is not limited thereto. When the light emitting layer 140c emits blue light, it includes a host material including CBP or mCP, and includes (4,6-F2ppy) 2Irpic Lt; RTI ID = 0.0 > a < / RTI > dopant material. Alternatively, the fluorescent material may include any one selected from the group consisting of spiro-DPVBi, spiro-6P, distyrylbenzene (DSB), distyrylarylene (DSA), PFO polymer, and PPV polymer. It is not limited. The electron transport layer 140d serves to smooth the transport of electrons and may be formed of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, But are not limited thereto. The electron injection layer 140e may function to facilitate the injection of electrons and may include Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq. Here, the present invention is not limited to FIG. 8, and at least one of the hole injection layer 140a, the hole transport layer 140b, the electron transport layer 140d, and the electron injection layer 140e may be omitted.

The upper electrode 150 is located on the organic light emitting layer 140. The upper electrode 150 may be selected as an anode or a cathode. Here, the upper electrode 150 selected as the anode may be formed of any one of ITO (Indium Tin Oxide), IZO (Indium Tin Zinc Oxide), ITZO (Indium Tin Zinc Oxide), and AZO (Al2O3 doped ZnO) .

In the panel, an electrode part S connected to the sensing part is located. The electrode portion S is formed on one surface of the interlayer film 161 located on the subpixel, the first electrode portion 163 located on the interlayer film 161 and the second substrate 100b facing the subpixel And a second electrode unit 165 positioned at the second electrode unit.

The electrode part S formed in the panel is formed in a transparent material such as ITO (Indium Tin Oxide), IZO (Indium Tin Zinc Oxide), ITZO (Indium Tin Zinc Oxide) and AZO But is not limited to.

The electrode portion S may include a spacer 167 attached to the first electrode portion 163 or the second electrode portion 165. Such a spacer 167 may be located in a region corresponding to the bank layer 130, which is a non-emission region of the subpixel. However, when the first electrode portion 163 or the second electrode portion 165 is formed thick, the spacer 167 may be omitted. In an embodiment, the second electrode part 165 is formed by being divided and is patterned to expose the light emitting region of the subpixel. However, the second electrode portion 165 may be formed by dividing the light emitting region of the subpixel without exposing it.

Here, in the case of the first electrode portion 163 located on the subpixel, the portion located on the bank layer 130 is located higher than the portion located in the opening region. Accordingly, when the user touches the panel, the first electrode portion 163 positioned on the bank layer 130 and the second electrode portion 165 positioned on one surface of the second substrate 100b are structurally contacted Causing a resistance change. According to this structure, when the user touches the panel, the sensing unit can recognize the change in resistance between the first electrode unit 163 and the second electrode unit 165 located in the panel, so that the touched position can be recognized.

The interlayer film 161 may be formed of an insulating film or an organic film as a film for separating the upper electrode 150 of the subpixel from the first electrode portion 163 of the electrode portion S. [

Referring to FIG. 9, the interlayer film 161 may have a different thickness depending on the emission color of the sub-pixels R, G, and B. For example, if the thickness of the interlayer film 161 is changed in the order of red subpixel R, green subpixel G, and blue subpixel B, the interlayer film 161 included in the electrode portion S may be used A microcavity effect can be realized. When the interlayer film 161 is formed in a structure capable of realizing the micro-cavity effect, the light loss that may occur according to the structure of the electrode portion S may be compensated.

FIG. 10 is a cross-sectional view of a panel according to another embodiment of the present invention, and FIG. 11 is a cross-sectional view of a panel for explaining a micro-cavity effect according to an interlayer film structure.

Referring to FIG. 10, the panel may include a sub-pixel positioned on one side of the first substrate 200a and a second substrate 200b bonded and sealed to the first substrate 200a. The first substrate 200a and the second substrate 200b may be sealed together by an adhesive member 280. A polarizing plate 290 may be attached on the other surface of the second substrate 200b, which is a display surface of the panel. Although not shown, the polarizer 290 can include, but is not limited to, a phase retardation film and a polarizing film positioned on the phase retardation film.

The subpixel may include, but is not limited to, a transistor unit T including a switching transistor, a driving transistor, and a capacitor, and an organic light emitting diode D connected to the transistor unit T. The structure of the driving transistors 210, 212, 213, 214a, and 214b included in the transistor unit T and the organic light emitting diode D has been described above.

In the panel, an electrode part S connected to the sensing part is located. The electrode portion S is formed on one surface of the interlayer film 261 located on the subpixel, the first electrode portion 263 located on the interlayer film 261 and the second substrate 200b facing the subpixel And a second electrode portion 265 positioned at

The electrode part S formed in the panel is formed in a transparent material such as ITO (Indium Tin Oxide), IZO (Indium Tin Zinc Oxide), ITZO (Indium Tin Zinc Oxide) and AZO But is not limited to.

The electrode unit S may include a protrusion 268 positioned between the second substrate 200b and the second electrode unit 265 and projecting the second electrode unit 265. The protrusion 268 may be located in a region corresponding to the bank layer 230, which is a non-emission region of the subpixel. However, when the first electrode portion 263 or the second electrode portion 265 is formed thick, the protrusion 268 may be omitted. In an embodiment, the second electrode portion 265 is formed on one surface of the second substrate 200b, and is patterned to expose the light emitting region of the subpixel. However, the second electrode portion 265 may be formed by being divided without exposing the light emitting region of the subpixel.

Here, the second electrode portion 265 located on the sub-pixel is protruded by the protrusion 268. Accordingly, when the user touches the panel, the second electrode portion 265 positioned on the protruding portion 268 and the first electrode portion 263 positioned on the bank layer 230 are structurally brought into contact with each other, Change. According to this structure, when the user touches the panel, the sensing unit recognizes the resistance change between the first electrode unit 263 and the second electrode unit 265 located in the panel, so that the touched position can be recognized.

The interlayer film 261 may be formed of an insulating film or an organic film as a film for separating the upper electrode 250 of the subpixel and the first electrode portion 263 of the electrode portion S. [

Referring to FIG. 11, the interlayer film 261 may have a different thickness depending on the emission color of the sub-pixels R, G, and B. For example, if the thickness of the interlayer film 261 is changed in the order of red subpixel R, green subpixel G, and blue subpixel B, the interlayer film 261 included in the electrode portion S may be used A microcavity effect can be realized. When the interlayer film 261 is formed in a structure capable of realizing the micro-cavity effect, the light loss that may occur according to the structure of the electrode portion S may be compensated.

As described above, an embodiment of the present invention provides an organic light emitting display device capable of adding a touch screen panel function using an electrode portion formed in a panel. In addition, the embodiment of the present invention has the effect of realizing a micro-cavity effect together with a touch screen panel. Further, the embodiment of the present invention has the effect of realizing a resistive touch screen panel which can reduce manufacturing cost.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. It is therefore to be understood that the embodiments described above are to be considered in all respects only as illustrative and not restrictive. In addition, the scope of the present invention is indicated by the following claims rather than the detailed description. Also, all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

1 is a schematic block diagram of an organic light emitting display according to an embodiment of the present invention;

2 is a block diagram for explaining a sensing unit;

Figs. 3 to 6 are diagrams showing examples of the structure of the electrode portion located in the panel. Fig.

7 is a cross-sectional view of a panel according to one embodiment of the present invention.

8 is a view illustrating an example of a hierarchical structure of an organic light emitting diode.

9 is a cross-sectional view of a panel for explaining a micro-cavity effect according to an interlayer film structure;

10 is a cross-sectional view of a panel according to another embodiment of the present invention;

11 is a sectional view of a panel for explaining a micro-cavity effect according to an interlayer film structure;

DESCRIPTION OF THE REFERENCE NUMERALS

100a, 200a: first substrate 100b, 200b: second substrate

T: transistor part organic light emitting diode: D

161 and 261: Interlayer films 163 and 263:

165, 265: second electrode part S: electrode part

Claims (11)

Pixels comprising red subpixels, green subpixels, and blue subpixels located on a first substrate, and a second substrate bonded together with the first substrate; A first interlayer film disposed on the red subpixel, a second interlayer film disposed on the green subpixel, a third interlayer film disposed on the blue subpixel, a first interlayer film disposed on each of the interlayer films, An electrode unit including electrode units and second electrode units facing each of the first electrode units; And And a sensing unit connected to the electrode unit, The subpixels, the interlayer films, and the first electrode portions are stacked on the first substrate, the second electrode portions are disposed on the second substrate, Wherein the interlayer films are positioned to have different thicknesses depending on the emission color of the subpixels. The method according to claim 1, The sensing unit includes: Wherein when the user touches the panel, the controller senses a touched position by recognizing a change in resistance between the first electrode unit and the second electrode unit. The method according to claim 1, Wherein the first electrode portion and the second electrode portion are divided and formed in the corresponding layer, respectively. The method according to claim 1, Wherein one of the first electrode portion and the second electrode portion is formed in a divided manner in the corresponding layer and the other is formed in common in the corresponding layer. The method according to claim 1, Wherein the first electrode portion and the second electrode portion are formed in common in the corresponding layer. The method according to claim 1, The electrode unit includes: And a spacer attached to the first electrode unit or the second electrode unit. The method according to claim 1, The electrode unit includes: And a protrusion that is positioned between the second substrate and the second electrode unit and protrudes the second electrode unit. The method according to claim 1, Wherein the second electrode unit comprises: Wherein the organic light emitting display is patterned to expose the light emitting region of the subpixels. The method according to claim 1, Wherein the interlayer film Wherein the organic light emitting display device is an insulating film or an organic film. delete The method according to claim 1, Wherein the thickness of the first interlayer film is thicker than the thickness of the second interlayer film and the thickness of each of the third interlayer films or greater than the thickness of the second interlayer film and the thickness of the third interlayer film. .

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