KR101581372B1 - An apprartus for manufacturing a notchless wafer - Google Patents

An apprartus for manufacturing a notchless wafer Download PDF

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KR101581372B1
KR101581372B1 KR1020140004939A KR20140004939A KR101581372B1 KR 101581372 B1 KR101581372 B1 KR 101581372B1 KR 1020140004939 A KR1020140004939 A KR 1020140004939A KR 20140004939 A KR20140004939 A KR 20140004939A KR 101581372 B1 KR101581372 B1 KR 101581372B1
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wafer
mark
distance
ingot
wafers
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KR1020140004939A
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Korean (ko)
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KR20150085252A (en
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정병주
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주식회사 엘지실트론
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Abstract

An embodiment includes a support including a bottom for supporting a beam with an ingot sliced so as to be divided into a plurality of wafers, and a sidewall connected to the bottom, and a plurality of wafers sequentially arranged on one surface of each of the plurality of wafers And a laser marking unit for engraving a mark, wherein the laser marking unit moves so that the spacing distance from one surface of each of the plurality of wafers maintains a predetermined distance.

Description

[0001] APPARATUS FOR MANUFACTURING A NOTCHLESS WAFER [0002]

The embodiment relates to a wafer manufacturing apparatus without a notch.

A wafer sliced from an ingot undergoes processing steps such as lapping, chamfering, etching, and the like. A mark for the indication of the crystal orientation can be etched on the edge of the wafer used in these steps. For example, these marks can be used for wafer setting when the wafer is scribed along the cleavage plane.

A notch carved on the edge of the wafer may also be used as a mark for indicating the crystal orientation. In general, a notch having a crystal orientation of <110> can be formed on the outer periphery of an ingot block, and the notched engraved can be used as a reference point of a wafering process.

A stress imbalance may occur in the vicinity of the notch due to wafer notch grinding notch on the edge of the wafer. Such imbalance in stress may cause wafer defects, which may result in a decrease in the yield related to wafer production.

The embodiment can remove defect sources due to local stress due to notch generation, improve the yield, and improve the shape and depth of marks formed on each of the wafers. A wafer manufacturing apparatus and a manufacturing method are provided.

The apparatus for manufacturing a notchless wafer according to an embodiment includes a support including a bottom supporting a beam attached with an ingot sliced to be divided into a plurality of wafers, and side walls connected to the bottom; And a laser marking unit for sequentially marking one surface of each of the plurality of wafers using a laser, wherein the laser marking unit is configured to maintain a predetermined distance from a surface of each of the plurality of wafers, .

A first portion of the outer circumferential surface of the sliced ingot having a predetermined crystal orientation is attached to one surface of the beam, and one surface of the beam may be a surface facing the bottom of the beam.

At least one of the sidewalls may sequentially expose one side of the wafer on which the mark is engraved.

And a transfer unit for separating and transferring the wafer engraved with the mark from the beam.

The laser marking unit may engage the mark in at least one area of one surface of the wafer aligned with at least one of the 12 o'clock direction, the 9 o'clock direction and the 3 o'clock direction when the first portion is aligned at 6 o'clock

The notchless wafer manufacturing apparatus may further include a drying unit having a spray nozzle for spraying air onto one surface of the one of the wafers before a mark is formed on one surface of the one of the plurality of wafers .

The laser marking unit may include a distance measuring unit for sequentially measuring distances to one surface of each of the plurality of wafers, and a laser irradiating unit for irradiating a laser to one surface of each of the plurality of wafers to engage the marks.

A method of manufacturing a notched wafers according to an embodiment includes: measuring a predetermined crystal orientation of an ingot outer circumferential surface; Attaching the ingot to the beam such that the first portion of the ingot outer circumferential surface having the measured predetermined crystal orientation aligns with the center of the beam; An ingot cutting step of slicing the ingot attached to the beam into a plurality of wafers; And selecting one of the plurality of wafers and marking the wafer using a laser on one surface of the selected wafer.

Wherein the engraving comprises engraving at least one region of one side of each of the plurality of wafers aligned in at least one of a 12 o'clock direction, a 9 o'clock direction and a 3 o'clock direction when the first portion is aligned in a 6 o'clock direction The mark can be engraved on the mark.

The method of manufacturing a notchless wafer may further include separating and transferring the selected wafer on which the mark is engraved, from the beam.

Selecting any one of the plurality of wafers after the transferring step, and engraving the mark on any other selected wafers and performing the transferring step.

Between the step of cutting the ingot and the step of carving the mark, cleaning the sliced ingot attached to the beam may further comprise cleaning the ingot.

The method of manufacturing a notchless wafer may further include drying at least one region by spraying air to at least one region of the one surface of the selected wafer before engraving the mark.

The embodiment can remove a defect source due to a local stress due to notch generation, improve the yield, and make the shapes and depths of the marks formed on each of the wafers constant.

1 shows a flow chart relating to a method of manufacturing a notchless wafer according to an embodiment.
Fig. 2 is a flowchart showing the laser marking step shown in Fig.
3 shows an apparatus for manufacturing a notchless wafer according to an embodiment.
4A to 4C show an embodiment of the operation of the apparatus for manufacturing a notchless wafer shown in FIG.
5A shows an X-ray analyzer for measuring crystal orientation of an ingot.
Fig. 5B shows the first part of the ingot outer circumferential surface having the crystal orientation of the ingot measured in Fig. 5A.
FIG. 5C shows a beam attached to an outer circumferential surface portion of an ingot having a crystal direction of < 110 &gt;.
5D shows an ingot cutting apparatus with a beam attached thereto.
5E shows cleaning of the sliced ingot attached to the beam.
6 shows the area to be laser marked on one side of the selected wafer.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. Also, the size of each component does not entirely reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings. Hereinafter, an apparatus for manufacturing a notchless wafer according to an embodiment will be described with reference to the accompanying drawings.

 1 shows a flow chart relating to a method of manufacturing a notchless wafer according to an embodiment.

Referring to Fig. 1, a predetermined crystal orientation, or crystal orientation, is measured on the outer circumferential surface of an ingot. For example, a first part of an outer circumferential surface of an ingot block having a crystal orientation of <110> can be detected using an X-ray measurement method (S110).

5A shows an X-ray analyzer 510 for measuring crystal orientation of an ingot.

5A, the X-ray analyzer 510 includes an X-ray emitting portion 510a for emitting X-rays, and an X-ray emitting portion 510b for reflecting the X-ray diffraction pattern reflected by the crystal lattice of the ingot I, And a sensing unit 510b.

The X-ray analyzer 510 can analyze the X-ray diffraction pattern to measure the <110> crystal direction of the ingot I and measure the <110> crystal orientation of the ingot I having the <110> It is possible to detect the first part of the image.

Next, the ingot (I) is mounted on the beam so that the first part of the outer circumferential surface of the ingot having the center of the beam and the predetermined crystal direction is aligned.

Fig. 5B shows the first portion 501 of the outer circumferential surface of the ingot (I) having the crystal orientation of the ingot measured in Fig. 5A.

Referring to FIG. 5B, the ingot I is rotated so that the first portion 501 of the outer circumferential surface of the ingot (I) having a crystal orientation of <110> aligns with the 12 o'clock direction.

FIG. 5C shows a beam attached to the outer circumferential surface portion 501 of the ingot having a crystal orientation of < 110 >.

5C, the center of one surface of the beam 20 may be attached to the first portion 501 of the outer circumferential surface of the ingot I having a crystal direction <110> aligned at 12 o'clock have. The attachment may be attached to the first portion 501 of the outer circumferential surface of the ingot I having a crystal orientation <110> at the center of the beam 20. [

Next, after the beam 20 having the ingot I attached thereto is attached to the ingot cutting apparatus, the ingot I is sliced to be divided into a plurality of wafers by using an ingot cutting apparatus (S130).

5D shows an ingot cutting apparatus 300 with a beam 20 attached thereto.

5D, the ingot cutting apparatus 300 may include rollers 511 and 512, a wire 520, a work plate 30, a table 40, and a body 50 .

At least two of the rollers 511 and 512 may be disposed apart from each other, and at least one of the rollers 511 and 512 may be rotated.

The wires 520 (e.g., saw wires) are wound on the outer circumferential surface of the rollers 511 and 512, and can be driven at a high speed as the rollers 511 and 512 rotate.

The beam 20 to which the ingot (I) is attached can be fixed to the work plate 30 by being connected thereto.

The work plate 30 can be connected to the table 40 and mounted thereon. The table 40 is connected to the body 50 and can move up and down. The ingot I can move by moving the table 40 downward or upward and the ingot I can be sliced by the wire 520 running at a high speed. The sliced ingot may be divided into a plurality of wafers.

Next, the sliced ingot I 'attached to the beam 20 is cleaned. For example, the beam attached with the sliced ingot may be immersed in a cleaning bath containing the cleaning liquid (S140).

5E shows the cleaning of the sliced ingot I 'attached to the beam.

Referring to FIG. 5E, the ingot I 'sliced by the ingot cutting apparatus 300 may be divided into a plurality of wafers 10-1 through 10-n and a natural number of n> 1. Then, by immersing the sliced ingot I 'attached to the beam 20 in the cleaning liquid 532 in the cleaning tank 530, the ingot I' sliced by the cleaning liquid 532 can be cleaned.

When the cleaning is completed, the beam 20 attached with the ingot I 'sliced from the cleaning liquid 532 is taken out.

Next, laser marking is performed on a plurality of wafers 10-1 through 10-n attached to the beam 20 (natural number n> 1) (S150).

Fig. 2 is a flowchart showing the laser marking step shown in Fig.

Referring to FIG. 2, one of the plurality of wafers 10-1 to 10-n, n> 1 is selected and at least one region of the selected wafer is dried (S210). At least one region of one surface of the selected wafer to be dried may be a region to be laser marked.

6 shows the area to be laser marked on one side of the selected wafer.

Referring to FIG. 6, the region 502, 503, or 504 to be laser marked may be a region having a crystal orientation (e.g., < 110 >) of a predetermined ingot I.

The 12 o'clock direction, the 3 o'clock direction, and the 9 o'clock direction are oriented in the <110> crystal direction with respect to the first portion 501 of the outer circumferential surface of the sliced ingot I 'aligned in the center of the beam 20 .

When the first portion 501 of the outer circumferential surface of the sliced ingot I 'is assumed to be aligned in the 6 o'clock direction, at least one of the one side of the selected wafer aligned on at least one of the 12 o'clock direction, the 3 o'clock direction, The regions 502, 503, and 504 may be the portions to be marked.

Since the cleaning step S140 has been performed, the portion to be laser-marked may be wet. By injecting air into at least one of the first to third regions 502 to 504 of the selected one side of the wafer before performing the laser marking on each of the plurality of wafers, The area can be dried.

Next, when the drying step (S210) is completed, a mark is formed by using a laser on the area to be laser-marked on one side of the selected wafer (S220).

For example, a laser can be used to engrave marks on at least one of the first to third regions 502 to 504 of the selected wafer 10-1.

Next, the wafer 10-1 on which the mark marking step S220 has been completed is loaded on the cassette (S230).

Next, it is determined whether laser marking of all of the plurality of wafers 10-1 to 10-n is completed (S240).

If the laser marking for all the wafers 10-1 to 10-n is not completed, the next wafer (for example, 10-2) is subjected to the drying step S210, the laser marking step S220, S240). Then, steps S210 to S240 are repeated for the remaining wafers 10-3 to 10-n until laser marking for all the wafers 10-1 to 10-n is completed.

3 shows an apparatus for manufacturing a notchless wafer according to an embodiment.

3, a notchless wafer manufacturing apparatus 100 includes a support 110, a drying unit 120, a laser marking unit 130, and a transfer unit 140.

The support 110 can receive the beam 20 with the sliced ingot I 'and can support the sliced ingot I'. The support 110 may be in the form of a container capable of receiving and supporting the beam 20 to which the sliced ingot I 'is attached.

For example, the support 110 may include a bottom 112 for supporting the beam 20 and sidewalls 114-1 to 114-4 that are connected to the bottom 112 and disposed about the sliced ingot .

At least one side wall (e.g., 114-1) of the sidewalls 114-1 through 114-4 may expose one or both ends of the sliced ingot I '. At least one side wall (e.g., 114-1) may sequentially expose one side of the wafer on which the mark is engraved.

The height of at least one sidewall (e.g., 114-1, 114-2) from the bottom 112 may be less than the height of the remaining sidewalls (e.g., 114-3, 114-4).

The first sidewall (e.g., 114-1) may expose one region 15 of the sliced ingot I '. At this time, a part 15 of the sliced ingot I 'at one end of the sliced ingot I' is exposed to at least one region of the wafer 1, which is aligned on at least one of the 12 direction, the 3 o'clock direction, 502, 503, 504).

The drying unit 120 blows air to at least one of the first to third regions 502 to 504 of one side of the wafer of the sliced ingot I 'exposed from the first side wall 114-1 do.

The drying unit 120 can jet air to one area (e.g., 502, 503, or 504) of one side of the wafer on which the laser mark is to be engraved. The drying unit 120 dries one area (for example, 502, 503, or 504) of one surface of the wafer on which the laser mark is to be engraved so as to perform laser marking smoothly.

The drying unit 120 includes a spray nozzle 122 for spraying air, a spray nozzle fixing unit 124 for fixing the spray nozzle 122, a first moving unit 126 for moving the spray nozzle fixing unit 124, . &Lt; / RTI &gt;

The first moving part 126 is a part of the first to third areas 502 to 504 on one side of the wafer of the sliced ingot I 'from which the injection nozzle 122 is exposed from the first side wall 114-1 The injection nozzle fixing portion 124 can be moved so as to face the one nozzle.

The laser marking unit 130 is formed on at least one of the first to third regions 502 to 504 on one side of the wafer of the sliced ingot I 'exposed from the first sidewall 114-1 using a laser The mark 19 can be engraved.

The laser marking unit 130 includes a laser irradiating unit 132 for engraving a mark 19 using a laser, a distance measuring unit 134 for measuring a distance between the sliced ingot I 'and one side of the wafer, A second fixing unit 136 fixing the distance measuring unit 134 and the distance measuring unit 134 and a second moving unit 138 moving the second fixing unit 136 according to the distance measurement result.

The transfer unit 140 transfers a wafer (for example, 10-1) on which the laser mark 19 is engraved to a cassette (not shown).

The transfer unit 140 may include a suction unit 142 for suctioning one side of the wafer and a third transfer unit 144 for moving the suction unit 142 up, down, left, and right.

For example, the transfer unit 140 can adsorb one side of the wafer engraved with the laser mark 19, separate the sucked wafer from the beam 20, and transfer the wafer to the loading unit (not shown). The wafer transferred to the loading section can be transferred to and stored in a cassette (not shown).

4A to 4C show an embodiment of the operation of the apparatus 100 for manufacturing a notchless wafer shown in FIG.

4A, when the first portion 501 of the sliced ingot I 'is attached to one side of the beam 20, the other side of the beam 20 is located on the bottom 112 of the support 110 The beam 20 is placed on the bottom 112 of the support 110 to abut.

Where the other face of the beam 20 may be a face located opposite one side of the beam 20 to which the first portion 501 of the sliced ingot I 'is attached.

The first to third regions 502 to 504 of the wafer (e.g., 10-1) of the sliced ingot I 'attached to the beam 20 placed on the bottom 112 of the support 110 are arranged in a 1 side wall 114-1. At this time, the wafer exposed by the first side wall 114-1 may be a wafer located at the outermost side of the sliced ingot I '.

The drying unit 120 is disposed on at least one of the first to third regions 502 to 504 of the wafer (e.g., 10-1) of the sliced ingot I 'exposed from the first side wall 114-1 Sprays air.

For example, the first moving part 126 moves the first fixed part 124 to move the first fixed part 124 of the wafer (for example, 10-1) of the sliced ingot I 'exposed from the first side wall 114-1 To the third regions 502 to 504, as shown in FIG.

The moved injection nozzle 122 can inject air into any one of the first to third regions 502 to 504. [ The movement of the injection nozzle 122 by the first moving part 126 and the air injection by the injection nozzle 122 can be performed for at least one of the first to third areas 502 to 504 have.

After the air injection is completed, the first moving part 126 can move the injection nozzle 122 to another position.

Referring to FIG. 4B, after the air injection is completed and the injection nozzle 122 is moved to another position, the laser marking unit 130 irradiates the sliced ingot I 'exposed from the first side wall 114-1 Marks are formed on at least one of the first to third regions 502 to 504 of the wafer (e.g., 10-1).

Before marking at least one of the first to third regions 502 to 504, the laser marking portion 130 is moved to a position where a wafer (not shown) of the sliced ingot I ' For example, the distance d from the one surface 15 of the substrate 10-1 may be measured, and the distance d may be shifted to a predetermined distance.

For example, the distance measuring unit 134 measures the distance d between the sliced ingot I 'exposed to the outside of the first sidewall 144-1 and one surface 15 of the wafer (for example, 10-1) can do.

The second moving unit 138 may move the distance measuring unit 134 and the laser irradiating unit 132 such that the distance d measured by the distance measuring unit 134 is a predetermined distance.

The laser irradiating unit 132 irradiates the wafer exposed by the first sidewall 144-1 with a predetermined distance from the one side 15 of the wafer (e.g., 10-1) The marks 19 may be formed by irradiating laser beams onto at least one region (e.g., 502, 503, or 504) of one surface 15 of the substrate 10-1 (e.g., 10-1).

Referring to FIG. 4C, the transfer unit 140 transfers a wafer (for example, 10-1) to which laser marking has been completed to a cassette (not shown).

For example, the suction portion 142 of the transfer portion 140 may be adsorbed to one surface 15 of the wafer (e.g., 10-1), and the third moving portion 144 may adsorb the wafer (e.g., 10-1) The adsorption unit 142 can be separated from the beam 20 and transferred to a loading unit (not shown), and the wafer transferred to the loading unit can be transferred to and stored in a cassette.

When the first wafer 10-1 is transported separately from the beam 20, one side of the second wafer 10-2 can be exposed from the first side wall 144-1. The drying process by the drying unit 120 described with reference to FIG. 4A, the distance measurement process by the distance measuring unit 134 described with reference to FIG. 4B, and the laser irradiation process by the laser irradiation unit 132 are performed on one surface of the exposed second wafer 10-2 And the transferring process by the transferring unit 140 described with reference to FIG. 4C are sequentially performed.

As described above, all of the laser marking processes for the first to nth wafers 10-1 to 10-n can be performed.

The distance d from the one surface 15 of the wafer (for example, 10-1) is measured before the laser marking for each of the first to nth wafers 10-1 to 10-n, d by moving the distance measuring unit 134 and the laser irradiating unit 132 such that the distance d is set to a predetermined distance in this embodiment, the shape and depth of the mark formed on each of the wafers 10-1 to 10-n are constant .

Further, since laser marking is performed instead of forming a notch marking the crystal direction of the wafer, the embodiment can remove a defect source due to local stress due to notch generation, The yield can be improved.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

110: Support part 120: Dry part
122: jet nozzle 124: jet nozzle fixing section
126: first moving part 130: laser marking part
132: laser irradiation unit 134: distance measuring unit
136: second moving part 140:
142: suction part 144: third moving part.

Claims (13)

A support including a bottom supporting a beam attached with an ingot sliced to be divided into a plurality of wafers, and sidewalls connected to the bottom;
Measuring a distance between one of the plurality of wafers and one surface of the first wafer, moving the measured distance to a predetermined distance, and determining whether the distance from the first wafer is the predetermined distance A laser marking unit for irradiating at least one region of one surface of the first wafer with a laser to mark a mark; And
And a transfer unit for transferring the first wafer engraved with the mark separated from the beam. The method according to claim 1,
Wherein a first portion of the outer circumferential surface of the sliced ingot having a predetermined crystal orientation is attached to one surface of the beam and one surface of the beam is a surface facing the bottom of the beam. 3. The method of claim 2,
Wherein at least one of the sidewalls sequentially exposes one side of the plurality of wafers into which the mark is to be engraved. The laser marking apparatus according to claim 1,
Measuring a distance between one side of the second wafer and the one side of the second wafer exposed through the side walls as the first wafer is transferred, moving the distance so that the distance from the one side of the measured second wafer is the predetermined distance, And a laser is irradiated to at least one region of one surface of the second wafer in a state in which the distance from the second wafer is the predetermined distance to mark a mark. The laser marking apparatus according to claim 2,
Wherein the mark is engraved on at least one area of one surface of the wafer aligned with at least one of the 12 o'clock direction, the 9 o'clock direction and the 3 o'clock direction when the first portion is aligned at 6 o'clock. 3. The method of claim 2,
Further comprising a drying unit having a spray nozzle for spraying air onto one surface of the first wafer before a mark is formed on one surface of the first wafer. The laser marking apparatus according to claim 1,
A distance measuring unit for measuring a distance between one surface of each of the plurality of wafers;
A laser irradiator for irradiating a laser on one surface of each of the plurality of wafers to engrave the mark; And
Wherein the laser irradiating unit moves the laser irradiating unit such that the distance measured by the distance measuring unit is the predetermined distance before engraving the mark. Measuring a predetermined crystal orientation of the outer circumferential surface of the ingot;
Attaching the ingot to the beam such that the first portion of the ingot outer circumferential surface having the measured predetermined crystal orientation aligns with the center of the beam;
An ingot cutting step of slicing the ingot attached to the beam into a plurality of wafers;
Measuring a distance between the first wafer and the first wafer among the plurality of wafers;
Irradiating at least one region of one surface of the first wafer with a laser to mark the mark after moving the measured distance to a predetermined distance; And
And separating and transferring the first wafer engraved with the mark from the beam. 9. The method of claim 8,
A plurality of wafers arranged on at least one of the 12 o'clock direction, the 9 o'clock direction and the 3 o'clock direction, and the at least one area of each of the plurality of wafers, Lt; / RTI &gt; delete 9. The method of claim 8,
Measuring a separation distance from one side of the second one of the plurality of wafers after the transferring step;
Irradiating at least one region of one surface of the second wafer with a laser so as to mark the mark after moving the measured distance from the one surface of the second wafer to the predetermined distance; And
And separating and transferring the second wafer engraved with the mark from the beam. 10. The method of claim 9,
Further comprising the step of cleaving the sliced ingot attached to the beam between the ingot cutting step and the mark engraving step. 13. The method of claim 12,
Further comprising the step of spraying air onto at least one area of a selected face of the wafer prior to engraving the mark to dry the at least one area.
KR1020140004939A 2014-01-15 2014-01-15 An apprartus for manufacturing a notchless wafer KR101581372B1 (en)

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JP6946153B2 (en) * 2017-11-16 2021-10-06 株式会社ディスコ Wafer generation method and wafer generator
JP7073172B2 (en) * 2018-04-03 2022-05-23 株式会社ディスコ How to generate a wafer

Citations (3)

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Publication number Priority date Publication date Assignee Title
KR100250653B1 (en) 1995-11-30 2000-04-01 다구마 시로오 Apparatus and method for adhering ingot and support member and method for cutting ingot and system for automatic manufacturing of wafer
JP2001272359A (en) 2000-03-27 2001-10-05 Rigaku Corp Monocrystal ingot processing device and its method
JP2011003773A (en) * 2009-06-19 2011-01-06 Sumco Corp Method of manufacturing silicon wafer

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JPH09246130A (en) * 1996-03-06 1997-09-19 Hitachi Ltd Semiconductor wafer, manufacture thereof, and manufacture of semiconductor device using it

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100250653B1 (en) 1995-11-30 2000-04-01 다구마 시로오 Apparatus and method for adhering ingot and support member and method for cutting ingot and system for automatic manufacturing of wafer
JP2001272359A (en) 2000-03-27 2001-10-05 Rigaku Corp Monocrystal ingot processing device and its method
JP2011003773A (en) * 2009-06-19 2011-01-06 Sumco Corp Method of manufacturing silicon wafer

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