KR101568652B1 - 기판 지지 구조, 클램프 제조 유닛, 및 리소그래피 시스템 - Google Patents

기판 지지 구조, 클램프 제조 유닛, 및 리소그래피 시스템 Download PDF

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KR101568652B1
KR101568652B1 KR1020117022031A KR20117022031A KR101568652B1 KR 101568652 B1 KR101568652 B1 KR 101568652B1 KR 1020117022031 A KR1020117022031 A KR 1020117022031A KR 20117022031 A KR20117022031 A KR 20117022031A KR 101568652 B1 KR101568652 B1 KR 101568652B1
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substrate support
support structure
substrate
liquid
clamping
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KR20110120333A (ko
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헨릭 잔 데 종
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마퍼 리쏘그라피 아이피 비.브이.
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Assigned to 에이에스엠엘 네델란즈 비.브이. reassignment 에이에스엠엘 네델란즈 비.브이. 권리의 전부이전등록 Assignors: 마퍼 리쏘그라피 아이피 비.브이.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G03B27/58—Baseboards, masking frames, or other holders for the sensitive material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2005—Seal mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49998—Work holding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249961—With gradual property change within a component

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020117022031A 2009-02-22 2010-02-22 기판 지지 구조, 클램프 제조 유닛, 및 리소그래피 시스템 Active KR101568652B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15441109P 2009-02-22 2009-02-22
US61/154,411 2009-02-22
US30619910P 2010-02-19 2010-02-19
US61/306,199 2010-02-19

Publications (2)

Publication Number Publication Date
KR20110120333A KR20110120333A (ko) 2011-11-03
KR101568652B1 true KR101568652B1 (ko) 2015-11-12

Family

ID=42154511

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117022031A Active KR101568652B1 (ko) 2009-02-22 2010-02-22 기판 지지 구조, 클램프 제조 유닛, 및 리소그래피 시스템

Country Status (7)

Country Link
US (1) US8991330B2 (enExample)
EP (1) EP2399279B1 (enExample)
JP (1) JP5596058B2 (enExample)
KR (1) KR101568652B1 (enExample)
CN (1) CN102414781B (enExample)
TW (1) TWI545682B (enExample)
WO (1) WO2010094800A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2469112A (en) 2009-04-03 2010-10-06 Mapper Lithography Ip Bv Wafer support using controlled capillary liquid layer to hold and release wafer
NL1038213C2 (en) * 2010-03-04 2012-10-08 Mapper Lithography Ip Bv Substrate support structure, clamp preparation unit, and lithography system.
TWI486723B (zh) * 2011-04-28 2015-06-01 瑪波微影Ｉｐ公司 在微影系統中處理基板的方法
US20130084147A1 (en) * 2011-10-03 2013-04-04 Denton Vacuum, L.L.C. Semiconductor wafer treatment system
JP2013125791A (ja) * 2011-12-13 2013-06-24 Canon Inc 保持装置、描画装置、および、物品の製造方法
JP2013125792A (ja) * 2011-12-13 2013-06-24 Canon Inc 保持装置、描画装置、および、物品の製造方法
WO2014103714A1 (ja) 2012-12-25 2014-07-03 京セラ株式会社 吸着部材およびそれを用いた吸着装置
CN103928369B (zh) * 2014-04-04 2016-07-13 中国电子科技集团公司第十三研究所 磷化铟晶片退火盒
DE102014118830A1 (de) * 2014-12-17 2016-06-23 Mechatronic Systemtechnik Gmbh Vakuumspannvorrichtung zum Aufspannen von Werkstücken
US11556063B2 (en) 2016-04-20 2023-01-17 Asml Netherlands B.V. Substrate support, lithographic apparatus and loading method
WO2019049588A1 (en) 2017-09-07 2019-03-14 Mapper Lithography Ip B.V. METHODS AND SYSTEMS FOR COATING A SUBSTRATE
AU2019249263A1 (en) * 2018-04-06 2020-11-05 Maxeon Solar Pte. Ltd. Local metallization for semiconductor substrates using a laser beam
DE112019006417B4 (de) * 2018-12-27 2024-03-21 Sumco Corporation Quarzglastiegel und herstellungsverfahren für einen silicium-einkristall
KR102957710B1 (ko) * 2019-11-14 2026-04-24 에이에스엠엘 네델란즈 비.브이. 기판 지지부, 리소그래피 장치, 전하 분포를 조작하기 위한 방법 및 기판을 준비하기 위한 방법
NL2024445B1 (en) * 2019-12-12 2021-09-01 Delmic Ip B V Method and manipulation device for handling samples
JP7256773B2 (ja) 2020-04-24 2023-04-12 信越化学工業株式会社 平坦性制御方法、塗膜の形成方法、平坦性制御装置、及び塗膜形成装置
WO2022058094A1 (en) 2020-09-16 2022-03-24 Asml Netherlands B.V. Base plate and substrate assembly
CN114151881B (zh) * 2021-11-06 2023-10-17 奥佳华智能健康科技集团股份有限公司 一种湿帘分水器

Citations (4)

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JP2005175016A (ja) 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
US20050284372A1 (en) 2004-06-28 2005-12-29 Applied Materials, Inc. Chamber component having grooved surface with depressions
JP2006339615A (ja) 2005-06-06 2006-12-14 Tokyo Electron Ltd 基板保持台、基板温度制御装置及び基板温度制御方法
US20090027649A1 (en) 2007-07-13 2009-01-29 Guido De Boer Lithography system, method of clamping and wafer table

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US5088006A (en) * 1991-04-25 1992-02-11 International Business Machines Corporation Liquid film interface cooling system for semiconductor wafer processing
US6281128B1 (en) 1999-06-14 2001-08-28 Agere Systems Guardian Corp. Wafer carrier modification for reduced extraction force
JP2004523880A (ja) * 2000-09-15 2004-08-05 アプライド　マテリアルズ　インコーポレイテッド 処理装置用ダブル二重スロット式ロードロック
SG121829A1 (en) 2002-11-29 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005310933A (ja) * 2004-04-20 2005-11-04 Nikon Corp 基板保持部材、露光装置及びデバイス製造方法
CN101495922B (zh) 2006-07-28 2012-12-12 迈普尔平版印刷Ip有限公司 光刻系统、热消散方法和框架
US8325321B2 (en) * 2006-07-28 2012-12-04 Mapper Lithography Ip B.V. Lithography system, method of heat dissipation and frame
TWI450047B (zh) 2007-07-13 2014-08-21 瑪波微影Ｉｐ公司 微影系統、夾緊方法及晶圓台

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005175016A (ja) 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
US20050284372A1 (en) 2004-06-28 2005-12-29 Applied Materials, Inc. Chamber component having grooved surface with depressions
JP2006339615A (ja) 2005-06-06 2006-12-14 Tokyo Electron Ltd 基板保持台、基板温度制御装置及び基板温度制御方法
US20090027649A1 (en) 2007-07-13 2009-01-29 Guido De Boer Lithography system, method of clamping and wafer table

Also Published As

Publication number Publication date
EP2399279A1 (en) 2011-12-28
US20100236476A1 (en) 2010-09-23
CN102414781A (zh) 2012-04-11
CN102414781B (zh) 2015-07-15
EP2399279B1 (en) 2018-10-31
KR20110120333A (ko) 2011-11-03
US8991330B2 (en) 2015-03-31
TW201106443A (en) 2011-02-16
WO2010094800A1 (en) 2010-08-26
TWI545682B (zh) 2016-08-11
JP2012518900A (ja) 2012-08-16
JP5596058B2 (ja) 2014-09-24

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