KR101545122B1 - Shield Plate Manufacturing Method for Sputtering Device and Shield Plate Thereof - Google Patents

Shield Plate Manufacturing Method for Sputtering Device and Shield Plate Thereof Download PDF

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Publication number
KR101545122B1
KR101545122B1 KR1020150055895A KR20150055895A KR101545122B1 KR 101545122 B1 KR101545122 B1 KR 101545122B1 KR 1020150055895 A KR1020150055895 A KR 1020150055895A KR 20150055895 A KR20150055895 A KR 20150055895A KR 101545122 B1 KR101545122 B1 KR 101545122B1
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KR
South Korea
Prior art keywords
shield plate
sticker
coating layer
vacuum chamber
ceramic coating
Prior art date
Application number
KR1020150055895A
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Korean (ko)
Inventor
김규선
곽재경
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김규선
곽재경
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Priority to KR1020150055895A priority Critical patent/KR101545122B1/en
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Publication of KR101545122B1 publication Critical patent/KR101545122B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H01L21/203—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to a method of manufacturing a shield plate of a sputtering apparatus and a shield plate manufactured thereby, and a metal layer adhering to the surface of the shield plate can be easily removed during a sputtering operation, thereby reducing labor costs and improving productivity .
To this end, the present invention relates to a sputtering apparatus for depositing a metal thin film on a semiconductor element such as a wafer or a PET film in a vacuum chamber, a shield plate (not shown) mounted to protect a wall surface inside the vacuum chamber, A) a step (S10) of washing and preheating the shield plate 10 after sanding; b) attaching (20) a sticker (20) having a space portion (20b) to the shield plate (10); c) forming a ceramic coating layer 12 partially on the shield plate 10 by spraying a liquid ceramic by a spraying method (S30); d) separating the sticker 20 (S40); e) heating and drying the shield plate 10 (S50).

Description

[0001] The present invention relates to a method for manufacturing a shield plate of a sputtering equipment, and a shield plate manufactured by the method,

The present invention relates to a method for manufacturing a shield plate of a sputtering apparatus and a shield plate manufactured thereby. More particularly, the present invention relates to a method for depositing a metal thin film such as aluminum or copper on a surface of a semiconductor element or a display film such as a wafer in a vacuum chamber A method of manufacturing a shield plate of a sputtering equipment in which a metal layer adhered to a shield plate can be easily removed after a sputtering operation is completed, and a method of manufacturing the shield plate of a sputtering equipment, To a shield plate manufactured by the same.

Sputtering equipment for forming a thin metal film on a wafer is among equipment for manufacturing a wafer which is a semiconductor device.

The sputtering equipment is also used when a thin film of ITO, which is an electrode material, is coated on a display film used for a touch screen or the like.

1, the general sputtering equipment includes a vacuum chamber 100 and a vacuum pump 800 for holding the inside of the vacuum chamber 100 in a vacuum state. A pressure gauge 700 for measuring the pressure in the chamber is provided at one side of the chamber.

A wafer fixing chuck 300 for fixing the wafer 200 is mounted in the vacuum chamber 100 and a metal for depositing a metal thin film on the surface of the wafer 200 is formed on the vacuum chamber 100. [ A target 400 is provided.

A heater is embedded in the wafer fixing chuck 300, and aluminum or copper is used as the metal target 400.

As the source gas for sputtering the metal target 400, argon gas is mainly used. The argon gas is supplied to the backside of the wafer 200 through the gas supply line 350.

A wafer support ring 500 for supporting the wafer 200 is provided on the outer circumferential surface of the wafer chuck 300.

A shield plate 10 for preventing the particles of the metal target 400 from adhering to the wall surface of the vacuum chamber 100 is provided outside the support ring 500.

Aluminum is widely used as the material of the shield plate 10 and is detachably installed in the vacuum chamber 100 for periodic cleaning.

The shield plate 10 prevents the metal particles from sticking to the inner wall surface of the vacuum chamber 100 during the sputtering operation.

Further, after the sputtering work is completed, the shield plate 10 can be taken out to remove the metal layer adhered to the surface of the shield plate 10.

In the sputtering apparatus having the above-described structure, when argon gas is injected into the vacuum chamber 100 and power is applied to the metal target 400, the argon gas is ion-decomposed by an electric field.

The thus-decomposed cation (Ar +) is attracted toward the metal target 400, which is a negative potential, so that the metal target 400 particles are protruded and deposited on the wafer 200. At this time, particles of the metal target 400 adhere to the surface of the shield plate 10 to form a metal layer.

Accordingly, the shield plate 10 should periodically remove the metal layer formed by the particles of the metal target 400. Otherwise, particles may be generated by the particles of the metal target 400, resulting in poor wafer quality.

However, since the conventional shield plate 10 has a smooth surface, metal particles separated from the metal target 600 are tangled with each other to form a metal layer, so that it is not easy to remove the metal layer.

Generally, the metal layer adhering to the shield plate 10 is manually removed by using a hydraulic press, a tablet, a hammer, or the like. Therefore, it takes a long time to remove the metal layer adhered on the shield plate 10 have.

Normally, each time the metal target 400 is exchanged once, the shield plate 10 is to be replaced two to three times. It usually takes about 10 hours to remove the metal layer of the shield plate 10.

That is, according to the conventional shield plate structure, it takes a long time to remove the metal layer formed on the shield plate 10, resulting in an increase in labor costs and a decrease in productivity.

Utility Model Design Office, Korea Utility Model Newspaper 1997-0003176 Y1 Korean Patent Publication No. 2003-0049483 A

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems of the prior art, and it is an object of the present invention to facilitate removal of a metal layer sticking to a surface of a shield plate during a sputtering operation.

It is another object of the present invention to shorten the time for removing the metal layer sticking to the shield plate, thereby reducing the labor cost and improving the productivity.

Another object of the present invention is to make it easy to remove a metal layer sticking on a shield plate at low cost.

According to an aspect of the present invention, there is provided a sputtering apparatus for depositing a metal thin film on a semiconductor element such as a wafer or a PET film in a vacuum chamber, a shield mounted to protect an inner wall surface of the vacuum chamber, A method of manufacturing a plate (Shield Plate), comprising the steps of: a) washing and preheating a shield plate after sanding; b) attaching a sticker having a space portion to the shield plate; c) forming a ceramic coating layer partially on the shield plate by spraying a liquid ceramic by a spraying method; d) peeling the sticker; and e) heating and drying the shield plate.

In the step S10, the shield plate is preheated to 30 to 40 占 폚.

The sticker may include a lattice-shaped sticker body portion and a plurality of space portions in the form of a film.

In addition, the space portion of the sticker is formed in a rectangular shape.

The total area of the plurality of spaces of the sticker is 70% of the total area of the sticker so that the ratio of the total area of the ceramic coating layer to the total area of the ceramic coating layer is 7: 3 .

Further, a handle is further provided on one side of the sticker to facilitate peeling.

Further, the method further includes a step of heating the shield plate at 30 DEG C for 30 minutes after the step S30.

Further, in step S50, the shield plate is heated at 150 DEG C for 30 minutes.

According to the present invention, there is an effect that the metal layer sticking to the surface of the shield plate can be easily removed during the sputtering work.

Further, by shortening the time for removing the metal layer sticking to the shield plate, the labor cost can be reduced and the productivity can be improved.

Further, there is an effect that the metal layer sticking on the shield plate can be easily removed at a relatively low cost.

1 is a schematic cross-sectional view of a prior art sputtering equipment;
2 is a perspective view illustrating a manufacturing process of a shield plate according to the present invention.
3 is a perspective view illustrating a process of peeling the sticker from the shield plate according to the present invention.
4 is a sectional view taken along the line AA in Fig.
5 is a perspective view illustrating a state where a metal layer is formed on a shield plate manufactured according to the present invention.
6 is a sectional view taken along line CC of Fig.
7 is a flowchart illustrating a manufacturing process of a shield plate according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 2 to 7. FIG.

As shown in FIG. 7, in a sputtering apparatus for depositing a metal thin film on a semiconductor element such as a wafer or a PET film in a vacuum chamber, a method of manufacturing a shield plate of a sputtering equipment according to the present invention includes: A method of manufacturing a shield plate for protecting a wall surface of a chamber, the method comprising the steps of: a) washing and preheating the shield plate (10) after sanding (S10); b) attaching (20) a sticker (20) having a space portion (20b) to the shield plate (10); c) forming a ceramic coating layer 12 partially on the shield plate 10 by spraying a liquid ceramic by a spraying method (S30); d) separating the sticker 20 (S40); e) heating and drying the shield plate 10 (S50).

In step S10, it is preferable to preheat the shield plate 10 to 30 to 40 占 폚. This is for easily attaching the sticker (20) to the shield plate (10).

In addition, the sticker 20 includes a lattice-shaped sticker body portion 20a and a plurality of space portions 20b in the form of a film.

Also, the sticker 20 is preferably formed of a sticky film.

In addition, the space 20b of the sticker 20 is preferably formed in a rectangular shape.

In addition, the total area of the plurality of space portions 20b of the sticker 20 is preferably 70% of the total area of the sticker.

When the total area of the ceramic coating layer 12 is 70% or less of the total area of the shield plate 10, the area of the metal layer 32 which is stuck by the sputtering operation is widened, making it difficult to remove it.

That is, the metal particles do not adhere to the ceramic coating layer 12 during the sputtering operation, but are adhered only to other portions (the "B" portion in FIG. 3) to form the metal layer 32 (see FIG. Accordingly, if the metal layer 32 is too wide, it is difficult to remove the metal layer 32.

In addition, when the total area of the ceramic coating layer 12 is 70% or more of the total area of the shield plate 10, the area of the metal layer 32 on which the metal particles can stick is too small.

Accordingly, it is preferable that the ratio of the total area of the ceramic coating layer 12 to the total area of the ceramic coating layer 12 is 7: 3.

Further, it is preferable that a handle 22 is further formed on one side of the sticker 20 for facilitating peeling.

Further, it is preferable to further include a step of heating the shield plate 10 at 30 DEG C for 30 minutes after the step S30. Thus, the sticker 20 can be easily separated from the shield plate 20.

In addition, it is preferable that the shield plate 10 is heated at 150 DEG C for 30 minutes in step S50 so that the ceramic coating layer 12 is firmly attached to the shield plate 10. [

Hereinafter, the manufacturing process and effect of the shield plate of the sputtering equipment according to the present invention will be described.

First, as shown in FIG. 2, the shield plate 10 made of aluminum or the like is sanded and cleaned, and then the shield plate 10 is preheated at 30 to 40 ° C.

Then, a sticker (20) is attached to the surface of the shield plate (10), and the liquid ceramic is sprayed by the spray gun (30).

3, the ceramic coating layer 12 is formed on the surface of the shield plate 10 at a portion corresponding to the space portion 20b of the sticker 20. As shown in FIG.

Then, the shield plate 10 is heated at 30 DEG C for about 30 minutes, and then the sticker 20 is peeled off.

Then, as shown in Fig. 4, a ceramic coating layer 12 is partially formed on the shield plate 10. Fig.

Then, the shield plate 10 is heated at 150 DEG C for 30 minutes to complete the manufacture of the shield plate.

Then, the shield plate 10 is mounted in the vacuum chamber 100 of the sputtering equipment, and then the sputtering operation is performed.

Then, the metal particles of the metal target 400 are adhered to the remaining portion "B" (see FIG. 3) except for the ceramic coating layer 12 to form the metal layer 32 (see FIG. 5).

6, metal particles such as aluminum or copper do not adhere to the ceramic coating layer 12, so that the metal layer 32 formed on the shield plate 10 during the sputtering operation is not adhered to the ceramic coating layer 12, And a shape corresponding to the body portion 20a (see Fig. 3).

Accordingly, it is very easy to remove the metal layer 32 attached to the shield plate 10 after the sputtering operation.

That is, since the metal layers 32 are formed not in a tangled structure but in a structure separated from each other, the operation of removing the metal layers 32 is very simple.

Accordingly, the time required for removing the metal layer 32 formed on the shield plate can be shortened, and the labor cost can be reduced and the productivity can be improved.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, Changes will be possible.

10: Shield plate
12: Ceramic coating layer
20: Sticker
20a: sticker body portion
20b:
22: Handle portion
30: Spray Gun
32: metal layer
100: Vacuum chamber (Chamber)
200: Wafer
300: Wafer fixing chuck (Chuck)
400: Metal target (Target)
500: Wafer support ring (Ring)
700: Pressure gauge (Guage)
800: Vacuum pump (Pump)

Claims (9)

delete In a sputtering apparatus for depositing a metal thin film on a semiconductor element such as a wafer or a PET film in a vacuum chamber, a method for manufacturing a shield plate for protecting a wall surface in a vacuum chamber, ,
a) washing and preheating (S10) the shield plate 10 after sanding;
b) attaching (20) a sticker (20) having a space portion (20b) to the shield plate (10);
c) forming a ceramic coating layer 12 partially on the shield plate 10 by spraying a liquid ceramic by a spraying method (S30);
d) separating the sticker 20 (S40);
e) heating and drying the shield plate 10 (S50);
Lt; / RTI >
Wherein the shield plate (10) is preheated at 30 to 40 占 폚 in step S10. 3. The method of claim 2,
Wherein the sticker (20) comprises a lattice-shaped sticker body (20a) and a plurality of spaces (20b) in the form of a film. The method of claim 3,
Wherein the space (20b) of the sticker (20) is formed in a rectangular shape. 5. The method of claim 4,
The total area of the plurality of space portions 20b of the sticker 20 is 70% of the total area of the sticker so that the total area of the ceramic coating layer 12 and the total area of the ceramic coating layer 12 To 7: 3. ≪ RTI ID = 0.0 > 8. < / RTI > 3. The method of claim 2,
And a handle (22) is formed on one side of the sticker (20) for facilitating peeling. 3. The method of claim 2,
Further comprising the step of heating the shield plate (10) at 30 DEG C for 30 minutes after the step S30. 3. The method of claim 2,
Wherein the shield plate (10) is heated at 150 DEG C for 30 minutes in the step S50. A shield plate of a sputtering equipment manufactured by any one of claims 2 to 8.
KR1020150055895A 2015-04-21 2015-04-21 Shield Plate Manufacturing Method for Sputtering Device and Shield Plate Thereof KR101545122B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200100535A (en) * 2019-02-18 2020-08-26 아이원스 주식회사 Shield for sputter and manufacturing method thereof
KR102634206B1 (en) * 2023-09-19 2024-02-06 동양엠더블유주식회사 Manufacturing Method of Shield with improved Surface Area and Surface Roughness

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193239A (en) * 2002-12-10 2004-07-08 Micro Gijutsu Kenkyusho:Kk Electromagnetic wave shield panel manufacturing method and electromagnetic wave shield panel
KR101150418B1 (en) * 2012-02-06 2012-06-01 황수현 Protection plate for chamber inside wall of sputtering equipment and manufacturing method of it

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193239A (en) * 2002-12-10 2004-07-08 Micro Gijutsu Kenkyusho:Kk Electromagnetic wave shield panel manufacturing method and electromagnetic wave shield panel
KR101150418B1 (en) * 2012-02-06 2012-06-01 황수현 Protection plate for chamber inside wall of sputtering equipment and manufacturing method of it

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200100535A (en) * 2019-02-18 2020-08-26 아이원스 주식회사 Shield for sputter and manufacturing method thereof
KR102348514B1 (en) 2019-02-18 2022-01-07 아이원스 주식회사 Shield for sputter and manufacturing method thereof
KR102634206B1 (en) * 2023-09-19 2024-02-06 동양엠더블유주식회사 Manufacturing Method of Shield with improved Surface Area and Surface Roughness

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