KR101537870B1 - Broadband power amplification module matching circuit of High frequency - Google Patents

Abstract

The present invention relates to a matching circuit, and more particularly, to a matching circuit that matches and synthesizes an impedance of an amplifying module constituting a high-frequency band high-output amplifier using an effective transmission line converter and a power synthesizer in a high- The present invention relates to a matching circuit of a high-frequency power amplifier module for a high-frequency band in which a high output is obtained,
The amplification module operates in a wideband of a high frequency band. The amplification module includes a balun formed at each of an input end and an output end, a capacitor formed at each of an input end and an output end, a converter configured at an input end and an output end for impedance conversion, And a transistor designed to achieve high output in a high frequency band.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a broadband power amplifier module matching circuit,

The present invention relates to a matching circuit, and more particularly, to a matching circuit that matches and synthesizes an impedance of an amplifying module constituting a high-frequency band high-output amplifier using an effective transmission line converter and a power synthesizer in a high- Frequency power band amplification module matching circuit for obtaining a high output power.

Generally, a circuit is required to compensate impedance difference between two connection ends by inserting an impedance matching circuit so that maximum output power is transmitted when there is no return loss when an output terminal and an input terminal of two different connection ends are connected in a very high frequency circuit.

However, in a high-frequency broadband amplification module using a conventional microstrip line, it is difficult to configure a structure having a low insertion loss and a matching input / output terminal in a high frequency band, and since the electrical length is long due to a low frequency band, And it is difficult to satisfy all the frequency bands.

Korean Registered Patent No. 10-0325363 (Mar. 02, 2002)

In order to solve the above problems,

The present invention provides a matching circuit capable of easily constructing a structure having input and output ends matched in a high frequency band and having a low insertion loss, physically reducing the size even when using a low frequency band, and satisfying all frequency bands It has its purpose.

In order to accomplish the object, there are provided a balun formed at an input end and an output end for power combining, a capacitor formed at each of an input end and an output end, a converter formed for impedance conversion, It consists of transistors designed for high output.

According to another aspect of the present invention, there is provided a second balun having a first balun having a length of 210 mm and a thickness of 1.2 mm and a coaxial cable having a length of 210 mm and a thickness of 2.15 mm and having an input end and an output end, First, second and third converters each having a length of 100 mm and a thickness of 1.2 mm and a coaxial cable having a length of 300 mm and a thickness of 1.2 mm at an output end, And a transistor located in the middle of the output stage.

According to still another aspect of the present invention, the transistor has a push-pull structure.

In another aspect of the present invention, the first capacitor has a value of 20 pF, and the second capacitor has a value of 27 pF.

In another aspect of the present invention, the balun and the transducer are composed of a coaxial cable and a toroidal magnetic body.

INDUSTRIAL APPLICABILITY As described above, the present invention can optimize matching and power combining of an amplification module operating in a wideband of a high frequency band, and can more efficiently satisfy low insertion loss and frequency characteristics in a wide band. Also, even if the frequency changes in a wide band of a high frequency band, the tuning process can be used only.

1 is a circuit diagram of a conventional high-frequency oscillation circuit.
FIG. 2 is a circuit diagram of a matching circuit for a broadband amplification module in a high frequency band according to the present invention
3 is a simulation diagram of a matching circuit for a wideband amplification module in a high frequency band according to the present invention
FIG. 4 is a diagram showing the internal configurations of the first and second baluns and the first, second, third, fourth, and fifth converters,

In an amplification module operating in a wideband of a high frequency band,

First and second baluns (10, 20) respectively formed at an input terminal (1) and an output terminal (2)

First and second capacitors (30, 40) respectively formed in an input terminal (1) and an output terminal (2)

First, second, third, fourth and fifth converters (50, 60, 70, 80, 90) constituted at an input terminal (1) and an output terminal (2)

And a transistor 100 positioned between the input terminal 1 and the output terminal 2 and designed for high output in a high frequency band.

Hereinafter, components according to the present invention will be described with reference to the accompanying drawings.

FIG. 2 is a circuit diagram of a high-frequency band broadband amplification module according to the present invention. FIG. 2 is a circuit diagram of a wideband amplification module matching circuit according to the present invention. The broadband amplification module includes first and second converters 50 and 60, a first balun 10, An amplifier matching circuit is constituted by using the first and second baluns 70, 80 and 90 and the second balun 20, and the first capacitor 30 and the second capacitor 30 are disposed in order to compensate the inductance of the impedance line for the low- A capacitor 40 is formed. Also, the amplifier is composed of a transistor 100 having a push-pull structure between the input unit 1 and the output unit 2 for designing a high-output amplifier with a high frequency band. The first balun 10 is configured to distribute power to an input of a push-pull structure transistor, and the second balun 20 is configured to power-synthesize an output of a push-pull structure transistor.

FIG. 3 is a simulation diagram of a high-frequency broadband amplification module matching circuit according to the present invention. The first and second baluns 10 and 20 and the first, second, third, fourth, and fifth converters 50, 60,70,80,90) is composed of coaxial cable, and the length and thickness of the coaxial cable used are as follows.

First balun 10 => Length: 210 mm, Thickness: 1.2 mm

Second balun 20 => length: 210 mm, thickness: 2.15 mm

First converter 50 => length: 100 mm, thickness: 1.2 mm

Second converter 60 => length: 100 mm, thickness: 1.2 mm

Third converter 70 => length: 300 mm, thickness: 1.2 mm

Fourth converter 80 => length: 300 mm, thickness: 1.2 mm

Fifth converter 90 => length: 300 mm, thickness: 1.2 mm

In order to increase the power capacity of the second balun 20, which is a power synthesizer of the output stage, coaxial cables and ferrites are made thicker and larger, and in particular, ferrites of the second baluns 20 are fixed to a thermoconductive epoxy device, So as to reduce the power loss.

In order to compensate the inductance of the impedance line, the value of the first capacitor 30 is 20 pF and the value of the second capacitor 40 is 27 pF.

FIG. 4 is an internal view of first, second, third, fourth, and fifth converters, which are components of the present invention, and shows low insertion loss and frequency characteristics in a structure having broadband characteristics. It consists of a coaxial cable (B) and a toroidal magnetic body (A). The coaxial cable B can be wound around the toroidal magnetic body A to further improve the low frequency and high frequency band characteristics of the pass band.

It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Anyone with knowledge will know easily.

1. Input stage 2. Output stage
10. First balun 20. Second balun
30. First capacitor 40. Second capacitor
50. First converter 60. Second converter
70. Third converter 80. Fourth converter
90. Fifth transducer 100. Transistor
A. Toroidal magnetic body B. Coaxial cable

Claims (6)

delete In an amplification module operating in a wideband of a high frequency band,
A first balun 10 formed of a coaxial cable having a length of 210 mm and a thickness of 1.2 mm and ferrite formed on the input terminal 1 for power combining to perform normal operation at a high output,
A second balun 20 formed of a coaxial cable and ferrite having a length of 210 mm and a thickness of 2.15 mm and formed in the output stage 2 for power synthesis and for normal operation at a high output,
First and second capacitors (30, 40) respectively formed in an input terminal (1) and an output terminal (2)
First and second converters 50 and 60 formed on the input terminal 1 for impedance conversion and composed of coaxial cables having a length of 100 mm and a thickness of 1.2 mm;
Third, fourth and fifth converters 70, 80, and 90 formed of coaxial cables of length 300 mm and thickness 1.2 mm, formed in the output stage 2 for impedance conversion,
And a transistor (100) positioned between the input terminal (1) and the output terminal (2) and designed for high output in a high frequency band. 3. The method of claim 2,
The first and second capacitors 30 and 40 are formed to compensate for the inductance of the impedance line in the pass band. The first capacitor 30 has a value of 20 pF. The second capacitor 40 has a capacitance of 27 pF Wherein the matching circuit comprises: 3. The method of claim 2,
Wherein the first and second baluns and the first, second, third, fourth, and fifth converters are comprised of a toroidal magnetic body (A) and a coaxial cable (B) . 3. The method of claim 2,
Wherein the transistor (100) has a push-pull structure. 3. The method of claim 2,
Wherein the ferrite of the second balun (20) comprises a thermally conductive epoxy.

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