KR101525966B1 - Method for cleaning gas laser apparatus - Google Patents

Abstract

Disclosed is a method for cleaning a gas laser apparatus capable of removing hazardous substances and particles deposited in a laser chamber and each part. The method for cleaning a gas laser apparatus comprises: a pre-treating step of removing residual gas remaining in a laser chamber; a step of drawing a part installed inside the laser chamber through an opened gate to the outside of the laser chamber by separating at least one gate opening and closing member for opening and closing a gate of the laser chamber from the laser chamber; a step of dipping the laser chamber and the part arranged inside the laser chamber into cleaning chemicals; a post-treating step of performing nitrogen blowing and chemical rinsing after rinsing the part and ultrasonic cleaning so as to remove a residual material generated by chemical dipping; a cleaning step of removing moisture and an oxide film remaining after the post-treating step; and a step of closing the gate of the laser chamber opened by the gate opening and closing member after placing the part to the original position inside the laser chamber.

Description

METHOD FOR CLEANING GAS LASER APPARATUS [0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method of a gas laser device, and more particularly, to a cleaning method of a gas laser device, in which a laser chamber and each component are dipped in a chemical to remove harmful substances or particles deposited on the laser chamber and each component, And then removing the moisture or the oxide film. The present invention also relates to a cleaning method of a gas laser device.

An excimer laser device is well known as a laser oscillator used in a laser processing apparatus or the like. Such an apparatus is configured to encapsulate an excimer laser gas (Hcl, Xe, Ne) in a chamber and cause a pulse discharge in the chamber to excite the laser gas to oscillate a pulsed laser.

At this time, a high-voltage current is applied between the two discharge electrodes of the anode and the cathode to cause a pulse-type discharge. When a discharge occurs, the laser oscillation is accelerated, but the surfaces of the anode and the cathode are slightly worn out due to the effect of evaporation due to instantaneous temperature rise, sputtering due to discharge, and the like. The anode and the cathode are generally made of nickel which is difficult to react with hydrogen chloride. However, nickel ions are reacted with chlorine ions ionized at a high temperature and a high voltage, so that nickel chloride particles are generated in the chamber and are laminated in the laser chamber or parts .

These particles lower the heat exchange capacity of the heat exchanger or adhere to the window material through which the laser passes, lowering the light transmittance of the laser, and adhere to the inner wall of the chamber, resulting in lowering of laser output or lowering of stability due to insulation failure.

For this reason, the laser chamber of the laser device or the parts in the laser chamber are being cleaned on a regular basis.

Conventionally, there has been a method for removing moisture and hydrogen by heating the inside of the laser chamber while maintaining a high vacuum in order to clean the gas laser device as described above. However, nickel chloride which is stacked has high hydrophilicity, so that when the laser chamber is bonded with moisture in the atmosphere, it is difficult to adhere to the inner wall of the chamber or to the electrode surface to be removed.

There has also been a method of removing particles by colliding a solid insulative body such as dry ice with an acceleration means in a laser chamber by another conventional cleaning method. However, this method has some effect in removing the particles in the portion facing the acceleration means, but there is a limit in removing the particles in the portion not facing the acceleration means. In addition, this method has a problem in that the collision of the solid insulation body with the accelerating means causes additional wear on the already worn electrodes or degrades the durability of other parts.

In order to solve this problem, the operator manually removes the laser chamber manually to clean the laser chamber and the parts. However, when manual operation is performed, toxic residual gas from the laser chamber escapes from the laser chamber when the laser chamber is detached, resulting in a problem that the operator's health is threatened. Further, in the case of a heat exchanger installed in a laser chamber, it is difficult to clean such a component because of its complicated shape and large surface area because it has a large number of pins, and particles deposited in a small gap formed in each component are removed There was a difficult problem.

Disclosure of the Invention The present invention has been devised to solve the problems described above, and it is an object of the present invention to separate the gate of the laser chamber from the laser chamber and to completely remove the deposited particles by using a chemical suitable for the material of the laser chamber and parts, And it is an object of the present invention to provide a cleaning method of a gas laser device which can maintain the performance of a gas laser device at a maximum level by removing an oxide film and moisture by post treatment.

According to one aspect of the present invention, there is provided a cleaning method of a gas laser device including a laser chamber for exciting a laser gas sealed therein by discharge to generate laser light, A pretreatment step of removing residual gas remaining in the laser chamber; Separating at least one gate opening / closing member for opening / closing a gate of the laser chamber from the laser chamber, and withdrawing a component installed in the laser chamber through the opened gate to the outside of the laser chamber; Chemically dipping a cleaning agent in the laser chamber and a component disposed within the laser chamber; A post-treatment step of performing a component rinse and ultrasonic cleaning, followed by nitrogen blowing and chemical rinsing, in order to remove the residual material generated by the chemical dipping of the component; A cleaning step for removing moisture or an oxide film remaining after the post-processing step; And closing the gate of the laser chamber opened with the gate opening / closing member after replacing the part into the laser chamber.

The pretreatment step may introduce an inert gas into the laser chamber through a draw pump and exhaust the residual gas combined with the inert gas through an exhaust pump.

The inert gas may be a florine-based gas.

The cleaning agent is non-reactive with respect to the laser chamber and the component, and can remove oxide films or dust deposited on the surface of the laser chamber and the component.

Each of the above components is made of stainless steel, nickel alloy, ceramics and quartz, and the cleaning agent may be non-reactive to each of the above materials.

The parts made of the stainless steel material, ceramics and quartz can perform additional chemical dipping.

In the post-treatment step, when the component is made of a nickel alloy, a dry sanding process may be added.

The dry sanding process may be performed by a sand paper having a grit of 400 to 660.

The cleaning step may include heat drying, nitrogen blowing, final inspection, and purging.

Performing the purge process and closing the gate of the laser chamber when the cleaned parts have passed the final inspection, and returning to the step of chemical dipping if the cleaned parts do not pass the final inspection I can go.

The purging process may remove the oxide film of the cleaned parts.

And diluting the atmospheric residual gas after the step of closing the gate of the laser chamber.

In the step of diluting the residual gas in the atmosphere, nitrogen or argon capable of binding with the residual gas may be injected to remove residual gas composed of oxygen or carbon dioxide remaining in the laser chamber.

After discharging the nitrogen or argon gas combined with the residual gas, the laser chamber may be evacuated.

The chemical dipping step is performed in a chemical bath, and the post-treatment step is performed in a chemical bath and a dry oven, and the cleaning step can be performed in a clean processing chamber.

It is of course possible that each of the above steps is performed automatically by the transportation means passing through the guide member and is controlled by the control unit.

As described above, in the present invention, the residual gas harmful to the human body can be removed in advance to improve the safety of the operator. By using a chemical having non-reactivity for each part, damage to each part can be prevented, You can completely remove the particles.

In addition, the present invention completely eliminates the organic substances that may reduce the efficiency of the laser oscillation remaining on the surfaces of the parts where the particles are removed and the moisture that can form an oxide film on each component, And the performance of the gas laser device can be maintained at the highest level.

1 is a front view showing a gas laser device according to an embodiment of the present invention.
2 is a side view showing a gas laser device according to an embodiment of the present invention.
3 is a flowchart showing a cleaning procedure according to an embodiment of the present invention.
4 is a view showing a configuration of a process of automatically cleaning some of the processes of cleaning a gas laser device according to an embodiment of the present invention.
FIG. 5 is a block diagram illustrating the function of a process of automatically cleaning some of the processes of cleaning a gas laser device according to an embodiment of the present invention.

Hereinafter, a cleaning method of a gas laser apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

The laser device can be divided into a solid laser device and a gas laser device excimer laser device depending on the properties of the medium. Among them, the gas laser device and the excimer laser device cause the laser to oscillate through discharge or gas motion by the medium of gas. In this process, particles are stacked inside the laser device, which adversely affects the performance of the laser device. The cleaning method of the gas laser device according to the present invention can be used for cleaning a gas laser device as well as an excimer laser device because it can be used in a laser device using a gas as a medium. Hereinafter, the excimer laser device and the gas laser device are collectively referred to as a gas laser device.

1 and 2, a gas laser apparatus 100 according to an exemplary embodiment of the present invention includes a laser chamber 110, a motor 120, a heat exchanger 130, a flow fan 140, A cathode 160, a laser oscillating unit 170, a draw-in pump 180, and an exhaust pump 190.

The laser chamber 110 forms the appearance of the gas laser device 100 and has a rectangular parallelepiped shape. Inside the laser chamber 110, the components are coupled.

On the top or one side of the laser chamber 110, gate opening / closing members 111, 113 and 115 for opening and closing the laser chamber 110 are provided. In this embodiment, the gate opening / closing member is not provided on the lower portion 117 or the other side 119 of the laser chamber 110, but it is of course possible to provide a gate opening / closing member as required.

The gate opening and closing members 111, 113 and 115 can be coupled by a fastening device such as a screw (not shown), and the fastening device can be released to separate the gate opening and closing members 111, 113 and 115 from the laser chamber 110. When the gate opening / closing members 111, 113, and 115 are separated, each component in the laser chamber 110 can be separated and drawn out of the laser chamber 110.

The motor 120 is for transmitting the power to the flow-through fan 140 and may be installed outside the gate opening and closing members 113 and 115. The motor 120 may be installed inside the gate opening / closing members 113 and 115, Power can be delivered.

The power of the motor 120 allows the flow-through fan 140 to send a laser gas (not shown) between the anode 150 and the cathode 160.

The heat exchanger 130 cools the laser gas (not shown) heated by the discharge, and may be disposed on both sides of the flow-through fan 140. The heat exchanger 130 has a refrigerant inside thereof to cool the heated laser gas (not shown).

The perfusion fan 140 may be disposed between the heat exchangers 130 to direct laser gas (not shown) between the anode 150 and the cathode 160. The flow-through fan 140 is disposed at a lower portion of the laser chamber 110 and is formed long in the longitudinal direction of the laser chamber 110.

The anode 150 and the cathode 160 generate a laser beam 177 by exciting a laser gas (not shown) by causing a discharge. The anode 150 and the cathode 160 are opposed to each other. A high voltage current is applied between the anode 150 and the cathode 160 from a high voltage power source (not shown) to cause a discharge.

The anode 150 is composed of an anode fixing support 151, an anode base 153 and an anode main body 155. The anode base 153 is installed on the anode fixing support 151 and the anode main body 155 is connected to the anode And is located on the base 153.

The cathode 160 is disposed on the anode body 155 at a predetermined interval and opposed to the anode body 155. The cathode 160 may include a cathode main body 161 and a filament cover 163 covering a plurality of filaments (not shown) that are coupled to the cathode main body 161.

The laser oscillating section 170 oscillates the pulsed laser light 177 out of the laser chamber 110 and may be installed on the gate opening and closing members 113 and 115 on both sides of the laser chamber 110.

The laser oscillating portion 170 includes a window holder 171, a window 173 fixed to the window holder 171, a front mirror 175 and a rear mirror 179 arranged to face each window 173. The laser beam 177 passes through the window 173 fixed to the window holder 171 and is repeatedly reflected between the front mirror 175 and the rear mirror 179 to transmit through the front mirror 175, 110).

The draw-in pump 180 is capable of injecting gas into the laser chamber 110 and may be located at one side of the upper portion of the laser chamber 110.

The exhaust pump 190 may discharge the gas inside the laser chamber 110 and may be located on the other side of the upper portion of the laser chamber 110. When the gas inside the laser chamber 110 is continuously discharged while the vacuum pump (not shown) is connected to the exhaust pump 190 to close the inlet pump 180, the inside of the laser chamber 110 is evacuated Can be made.

3 is a flowchart showing a method of cleaning the gas laser device 100 according to one embodiment of the present invention.

When the gas laser apparatus 100 is received, a goods receipt inspection is performed to check the state of the product, the degree of contamination, the degree of oxidation, the size of the product, and the like (S01).

After the receipt inspection, a pretreatment step for removing residual gas remaining in the laser chamber 110 is performed (S02).

Residual gas is a gas that can be harmful to the human body due to hydrogen chloride, excimer gas, or the like remaining in the laser beam 177 when it is generated. If the laser chamber 110 is separated as it is without removing the residual gas, there is a great risk that the operator will inhale the residual gas in the laser chamber 110 as it is.

In the pretreatment step S02, an inert gas is introduced into the laser chamber 110 through the draw-in pump 180, and then the residual gas combined with the inert gas is exhausted through the exhaust pump 190. [ In this case, the inert gas may be a florine-based gas. The toxic gas in the laser chamber 110 is discharged by the preprocessing step S02 and the harmful gas is not discharged even if the laser chamber 110 is disassembled.

After the pretreatment step S02, at least one gate opening and closing member 111, 113, 115 for opening and closing the gate (not shown) of the laser chamber 110 is separated from the laser chamber 110, (S03) is performed to the outside of the laser chamber 110 through an open gate (not shown).

Thereafter, a step of dipping the cleaning agent into the laser chamber 110 and the components disposed inside the laser chamber 110 is performed (S04, S05).

The first chemical dipping step (S04) is a step of injecting hexane in a predetermined amount into the bath (310) for 30 minutes to 60 minutes. The injected hexane serves to dissolve the particles remaining in the laser chamber 110 or the component.

In the second chemical dipping step (S05), the ultrapure water, hydrogen peroxide and ethylenediamine acetic acid (EDTA) are mixed in a predetermined ratio at a predetermined ratio, and then the mixture is introduced into the chemical bath (320). The introduced mixed material serves to remove the oxide film remaining in the laser chamber 110 or the component. The second chemical dipping step (S05) may also be performed for 30 minutes to 60 minutes.

The first chemical dipping step S04 is a step of removing particles mainly on the surfaces of the laser chamber 110 and parts and the first chemical dipping step S05 is a step of removing oxide films on the surfaces of the laser chamber 110 and parts. It is a step of removing with relatively strong washing chemicals.

After the chemical dipping step (S04, S05) is performed, a part rinse and ultrasonic irradiation step are performed (S05).

If the laser chamber 110 or the components are exposed to the chemical for a long time, the laser chamber 110 or components may be adversely affected. Thus, after chemical dipping, the laser chamber 110 or components can be rinsed in water. Further, during chemical dipping or component rinsing, organics may remain in the laser chamber 110 and components. In order to separate such organic matter, ultrasonic waves are irradiated.

This component rinse and ultrasonic irradiation step can be performed for 20 minutes to 40 minutes.

Thereafter, a nitrogen blowing step for blowing nitrogen to the laser chamber 110 and the components is performed (S07).

Even if the laser chamber 110 or the components are rinsed and irradiated with ultrasonic waves, when they are dried, residues such as water mist can be formed on the surface of the laser chamber 110 or components. Nitrogen can combine with oxygen to remove these residues.

This nitrogen blowing step (S07) may be carried out in a drying oven for 5 minutes to 10 minutes.

Thereafter, a step of rinsing the laser chamber 110 or components with a chemical such as alcohol and checking the state of the laser chamber 110 or parts is performed (S08).

Such parts rinse and ultrasonic irradiation steps (S06) to chemical rinsing and inspection (S08) are post-processing steps. This post-treatment step removes residues such as organic matter or water scum that may degrade the efficiency of the laser oscillation remaining on the surface of the laser chamber 110 or the parts where the particles have been removed, thereby maintaining the efficiency of the laser oscillation for a long time have. In addition, organic materials and residues can be removed to prevent particles from being easily deposited on the surface of the laser chamber 110 or components.

Thereafter, a cleaning step is performed to remove moisture or an oxide film that partially remains in the laser chamber 110 or the components.

The cleaning step is performed in an environment of a clean room of about 500 to 2000 classes. Here, the class 500 refers to an extent that only 500 dusts are contained within 1 cm 3.

During the cleaning step, heat drying is first performed (S09). The moisture remaining in the laser chamber 110 and the components is removed by heat drying (S09), and the heat drying (S09) can be performed in the clean process room (250) for one hour to eight hours at a temperature of 150 degrees .

The second step of the cleaning step is to blow the laser chamber 110 or components with nitrogen (S10).

The nitrogen blowing step S10 is carried out for 5 to 10 minutes by again removing residual material such as water remaining on the surface of the laser chamber 110 or the components as in the post-treatment nitrogen blowing step S07 .

After the nitrogen blowing step S10, a final inspection step is performed (S11). In the final inspection step S11, the final state of the cleaned laser chamber 110 or parts is inspected. If the final inspection is passed in the final inspection step S11, the nitrogen blowing and purging step S12 is performed. However, if the cleaned laser chamber 110 or components fail to pass the final inspection, the process returns to the chemical dipping step S04 to perform the subsequent steps again.

In the nitrogen blowing and purging step (S12), a process of finally removing the oxide film of the cleaned laser chamber 110 and parts is performed.

After the parts are returned to the inside of the laser chamber 110, a step of closing the gate (not shown) of the laser chamber opened by the gate opening / closing members 111, 113, and 115 is performed (S13).

After the steps 111, 113, and 115 of closing the gate of the laser chamber 110, a step of diluting the atmospheric residual gas and vacuuming the inside of the laser chamber 110 is performed (S14).

In the step of diluting the atmospheric residual gas (S14), a gas such as nitrogen or argon, which can be combined with the residual gas, may be injected in order to remove residual gas such as oxygen or carbon dioxide remaining in the laser chamber 110. [ Such residual gas, such as oxygen or carbon dioxide, may cause oxidation in the laser chamber 110. When such nitrogen or argon gas is combined with and discharged from an atmospheric gas such as oxygen or carbon dioxide, the problem of oxidation in the laser chamber 110 can be solved.

After the nitrogen or argon gas combined with the residual gas is discharged, the laser chamber 110 is made to be in a vacuum state to complete preparation for laser oscillation.

In FIG. 3, description has been given of the wearing, pretreatment, decomposition, chemical dipping, post-treatment, cleaning, assembling, and dilution of the gas laser device 100.

The gas laser device is divided into a laser chamber 110 and parts made of stainless steel, nickel alloy, ceramic and quartz. Components made of stainless steel include a heat exchanger 130, a heat exchanger cover (not shown), a perfusion fan cover support (not shown), a filament (not shown), and an insulator fixing support (not shown). Components made of a nickel alloy material include a flow-through fan 140, an anode 150, an anode base 153, a cathode 160, and the like. Examples of the component made of a ceramic material include a filament cover 163 and a cathode insulator cover (not shown), and a quartz component includes a window 173 and the like.

In order to use chemical that does not react according to each material and to optimize the process for each material, most parts of the cleaning method of each material are the same but some steps are added.

FIG. 3 exemplarily shows a cleaning method of the laser chamber 110. FIG.

Parts having a stainless steel material may be dipped into a diluted nitric acid solution in the process of FIG. The dilute nitric acid solution is formed by mixing the ultra pure water and the nitric acid solution at a predetermined ratio, and serves to additionally separate the oxide film, which is difficult to separate from the stainless steel material. This process is performed for 10 to 30 minutes after the second chemical dipping step (S05). If the second chemical dipping step (S05) was the step of removing the oxide film with a strong chemical, this step corresponds to the step of removing the oxide film with a weak chemical.

Parts having a nickel alloy material may be subjected to a dry sanding process in the process of FIG. The dry sanding process may be performed after the nitrogen blowing step (S07). The dry sanding process may be carried out by a sandpaper having a grit of 400 to 600. The grit means the number of particles protruding convexly in a 1 cm2 sandpaper. The larger the number of grit, the more uniform the surface of the component. The smaller the number, the rougher the surface of the component. In the present invention, since the grit of 400 to 600 is used, the surface of the component made of the nickel alloy is not only smooth, but also the organic matter and the oxide film which can not be removed can be additionally removed.

Parts having ceramics or quartz may be dipped in a diluted nitric acid solution for 10 to 30 minutes after the second chemical dipping step (S05) as well as parts having a stainless steel material.

Thus, in the present invention, damage to the laser chamber 110 and components can be minimized due to the non-reactivity of the cleaning agent or chemical to the laser chamber 110 and components. Further, an additional process having a high removal rate with respect to the oxide film or particles while having non-reactivity to each component is applied, so that efficient cleaning can be performed for each material.

Figs. 4 and 5 show a process of automatically cleaning some of the processes of cleaning the gas laser device 100 according to the present invention. The cleaning method of the gas laser apparatus 100 of the present invention is mostly performed manually, and some processes can be performed automatically for the efficiency of the operation.

4, in order to realize a process of partially cleaning the gas laser apparatus 100, a first chemical bath 210, a second chemical bath 220, a third chemical bath 220, A rear process chamber 240, a clean process chamber 250, a guide member 260, a transportation means 270, a component coupling cable 280, and a component 290.

The first to third chemical baths 210, 220 and 230 are used to inject cleaning chemicals for chemical dipping. The first to third chemical baths 210, 220 and 230 may be formed in the form of a bathtub, but they may also be formed in a rectangular parallelepiped shape.

The inlet pipes 211, 221 and 231 for supplying the chemical from the chemical supply unit 201 to the chemical baths 210, 220 and 230 are disposed at one side of the lower part of the first to third chemical baths 210, 220 and 230. In addition, discharge pipes 213, 223, and 233 for discharging the chemicals from the respective chemical tanks 210, 220, and 230 are disposed on the other side of the lower side of the first to third chemical tanks 210, 220, and 230.

The chemicals 215, 225, and 235 may be partially filled in the first to third chemical baths 210, 220, and 230, respectively.

The post-treatment chamber 240 is disposed adjacent to the third chemical tank 230, and can perform processes such as nitrogen blowing, component rinsing, and ultrasonic irradiation. 4 illustrates nitrogen blowing, and a nitrogen inlet portion 241 and a nitrogen outlet portion 245 may be disposed at a lower portion of the post-treatment chamber 240. A nitrogen blowing unit 243 capable of injecting nitrogen from both sides of the component 290 may be formed in the post-treatment chamber 240.

The clean process chamber 250 is disposed adjacent to the post-treatment chamber 240 and is performed in an environment of about 500 to 2000 classes. 4 shows that the heating unit 255 for heating and drying is disposed on both sides of the component 290. In Fig.

The guide member 260 may be located on the upper side of the first to the third chemical baths 210, 220 and 230, the post-treatment chamber 240, and the clean process chamber 250. The guide member 260 may have any structure as long as it can guide the transportation means 270 like a guide rail (not shown).

The transportation means (270) is guided by the guide member (260), and the operation is controlled by the control unit (320). The transportation means 270 can be operated, for example, by a member such as a guide rail (not shown) on which a guide roller (not shown) is mounted.

The component coupling cable 280 is coupled to the vehicle 270 and connects the component 290. Depending on the shape of the guide member 260, the component can be dipped and exposed to air.

5 is a functional block diagram showing a function of a process of automatically cleaning some of the processes of cleaning the gas laser device 100 according to the present invention.

5, the process of automatically cleaning some of the processes of cleaning the gas laser apparatus 100 according to the present invention may include, in addition to the respective components shown in Fig. 4, a memory 203, a control unit 205, Unit 254, and a key input unit 209. The key input unit 209 is a key input unit.

The memory 203 stores an optimized program such as a supply amount and a supply time of the chemical, a movement time and a stop time of the transportation means according to the processing step and the use state. In addition, the optimized program can be downloaded and updated in the memory 203 via the network.

The control unit 205 can control the chemical supply period and the supply amount by controlling the chemical supply unit 201, and can adjust the movement and stop time of the transportation means.

In order to automate some processes in the process of cleaning the gas laser apparatus 100, the user inputs information on the chemical supply cycle and the movement and stop of the supply amount transportation means to the key input unit 209, And the output state on the display unit 254.

4 and 5, since the operator does not directly contact the chemical, safety of the operator is ensured, and each operation is automatically controlled, so that the gas laser device 100 can be cleaned in a large amount.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.

100: gas laser device 110: laser chamber
120: motor 130: heat exchanger
140: perfusion fan 150: anode
160: cathode 170: laser oscillation portion
180: inlet pump 190: exhaust pump
210: First Chemical Substance 220: Second Chemical Substance
230: Third chemical tank 240: Post treatment chamber
250: Clean process chamber 260: Guide member
270: Transport means 280: Component connecting cable
290: Parts

Claims (16)

1. A cleaning method for a gas laser apparatus having a laser chamber for exciting a laser gas sealed inside thereof by discharge to oscillate laser light,
A pretreatment step of removing residual gas remaining in the laser chamber;
Separating at least one gate opening / closing member for opening / closing a gate of the laser chamber from the laser chamber, and withdrawing a component installed in the laser chamber through the opened gate to the outside of the laser chamber;
Chemically dipping a cleaning agent in the laser chamber and a component disposed within the laser chamber;
A post-treatment step of performing a part rinse and ultrasonic cleaning, followed by nitrogen blowing and chemical rinsing, in order to remove the residual material generated by the chemical dipping;
A cleaning step for removing moisture or an oxide film remaining after the post-processing step; And
And closing the gate of the laser chamber opened with the gate opening / closing member after the component is returned to the inside of the laser chamber. The method according to claim 1,
Wherein the pretreatment step introduces an inert gas into the laser chamber through a draw pump and exhausts the residual gas combined with the inert gas through an exhaust pump. 3. The method of claim 2,
Wherein the inert gas is a florine-based gas. The method according to claim 1,
Wherein the cleaning agent is non-reactive with respect to the laser chamber and the component, and removes an oxide film or dust deposited on the surface of the laser chamber and the component. 5. The method of claim 4,
Wherein each of the components is made of stainless steel, nickel alloy, ceramics and quartz, and the cleaning agent is non-reactive with each of the materials. 6. The method of claim 5,
Wherein said parts made of said stainless material, ceramic and quartz perform additional chemical dipping. The method according to claim 1,
Wherein the post-treatment step further comprises a dry sanding step when the part is made of a nickel alloy. 8. The method of claim 7,
Wherein the dry sanding step is performed by a sand paper having a grit of from 400 to 660. The method according to claim 1,
Wherein the cleaning step comprises heat drying, nitrogen blowing, final inspection, and purging. 10. The method of claim 9,
Performing the purge process and closing the gate of the laser chamber when the cleaned parts pass the final inspection,
And returning to the step of chemical dipping if the cleaned parts fail to pass the final inspection. 11. The method of claim 10,
Wherein the purge step removes the oxide film of the cleaned parts. The method according to claim 1,
Further comprising: after the step of closing the gate of the laser chamber, diluting atmospheric residual gas. 13. The method of claim 12,
The step of diluting the atmospheric residual gas comprises:
Wherein nitrogen gas or argon capable of binding with the residual gas is injected in order to remove residual gas composed of oxygen or carbon dioxide remaining in the laser chamber. 14. The method of claim 13,
And discharging the nitrogen or argon gas combined with the residual gas, the laser chamber is evacuated. The method according to claim 1,
Characterized in that the chemical dipping step is carried out in a chemical bath and the post-treatment step is carried out in a chemical bath and a dry oven, and the cleaning step is carried out in a clean process chamber. Way. The method according to claim 1,
Wherein each of the steps is performed automatically by a transportation means passing through a guide member and is controlled by a control unit.

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