KR101519553B1 - Scrubber for processing semiconductor waste gas using cyclone - Google Patents

Abstract

An object of the present invention is to provide a scrubber for semiconductor waste gas treatment using cyclone, which is capable of efficiently filtering solid phase powder and refractory nitrogen fluoride among semiconductor waste gases, And to provide a scrubber for semiconductor waste gas treatment. To this end, the present invention relates to a heating cyclone for supplying air and heat to a semiconductor waste gas so that the semiconductor waste gas is converted into solid phase powder, and the solid phase powder falls while turning; A solid phase powder storage unit connected to the heating cyclone to store the solid phase powder; A wet cyclone connected to the heating cyclone for supplying water to the semiconductor waste gas to convert the semiconductor waste gas into a liquid byproduct; And a liquid byproduct storage portion connected to the wet cyclone to store the liquid by-product. The present invention also provides a scrubber for treating a semiconductor waste gas using a cyclone.

Description

TECHNICAL FIELD [0001] The present invention relates to a scrubber for treating a semiconductor waste gas using a cyclone,

One embodiment of the present invention relates to a scrubber for treating semiconductor waste gas using a cyclone.

A semiconductor waste gas which is harmful to the human body is generated in the semiconductor manufacturing process. In order to prevent contamination by such harmful substances, the semiconductor waste gas must be purified before it is discharged to the outside.

For purifying the semiconductor waste gas, a semiconductor waste gas treating apparatus is used. The semiconductor waste gas treatment apparatus includes a reaction chamber for providing a high-temperature heat source for decomposing harmful substances in the semiconductor waste gas or promoting a chemical reaction, and a water treatment tower for filtering the solid phase powder in waste gas passing through the reaction chamber.

However, even if the semiconductor waste gas passes through the reaction chamber and the water treatment tower, the powder of the fine semiconductor waste gas can still be released into the atmosphere. Of course, it is possible to filter the solid phase powder by providing a bag filter at the rear end of the water treatment tower. In this case, however, the filter must be replaced periodically, and the pressure loss is large, which adversely affects the drive of the semiconductor manufacturing apparatus.

Korean Patent Publication No. 10-2007-0080004 (Publication Date: August 9, 2007)

An embodiment of the present invention provides a scrubber for semiconductor waste gas treatment using a cyclone capable of efficiently collecting and filtering solid phase powder, refractory nitrogen fluoride, and liquid by-products in semiconductor waste gas and without pressure loss.

One embodiment of the present invention is a heating cyclone for supplying air and heat to a semiconductor waste gas to cause the semiconductor waste gas to change into solid phase powder and allowing the solid phase powder to fall while rotating; A solid phase powder storage unit connected to the heating cyclone to store the solid phase powder; A wet cyclone connected to the heating cyclone for supplying water to the semiconductor waste gas to convert the semiconductor waste gas into a liquid byproduct; And a liquid by-product storage connected to the wet cyclone to store the liquid byproduct.

The heating cyclone includes a cylindrical portion extending in the vertical direction; At least one semiconductor waste gas inlet pipe coupled to the cylindrical portion; At least one air inlet tube coupled to the cylindrical portion; A heating portion extending in a vertical direction to an inner region spaced apart from the cylindrical portion; A reaction chamber disposed inside the heating unit and extending to the upper side of the cylindrical portion; And a conical portion connected to the lower side of the cylindrical portion and having a smaller diameter.

The semiconductor waste gas inlet pipe may be installed parallel to the tangential direction of the cylindrical portion.

The conical part may further include an air preheating part for supplying preheated air to the air inflow pipe.

The reaction chamber may further include a discharge pipe connected to the wet cyclone, and the discharge pipe may further include a protective gas preheating unit for supplying a protective gas to the heating unit. The protective gas may be supplied through the lower end of the heating unit or the reaction chamber.

The temperature of the spaced space between the cylindrical portion and the heating portion may be 200 to 350 ° C. Silicon (SiH ₄ ) in the semiconductor waste gas may be changed into silicon (SiO ₂ ) solid phase powder in a space separated from the cylindrical portion and the heating portion.

The temperature of the reaction chamber may be 450 to 800 ° C. In the reaction chamber, nitrogen fluoride (NF 3) in the semiconductor waste gas may be decomposed into HF or F ₂ .

The temperature of the air through the air inlet pipe may be 80 to 200 ° C.

The solid-state powder storage unit may further include a swirl flow prevention unit for preventing swirl flow of the solid phase powder.

The wet cyclone having a cylindrical portion extending in the vertical direction; A semiconductor waste gas inlet pipe coupled to the cylindrical portion; A discharge pipe extending in a vertical direction to an inner region spaced apart from the cylindrical portion; And a conical portion connected to a lower end of the cylindrical portion and having a gradually decreasing diameter.

At least one water injection nozzle may be further installed in the semiconductor waste gas inlet pipe of the wet cyclone.

At least one water jet nozzle may be further installed in the discharge pipe of the wet cyclone.

The semiconductor waste gas inlet pipe of the wet cyclone may be installed so that the semiconductor waste gas flows in parallel to the tangential direction of the cylindrical portion of the wet cyclone.

A plurality of swirl nozzles may be further formed in the cylindrical portion of the wet cyclone to swirl the semiconductor waste gas flowing through the semiconductor waste gas inflow pipe of the wet cyclone

In one embodiment of the present invention, the heating cyclone and the wet cyclone are connected in series at the rear end of the semiconductor manufacturing apparatus, so that the solid phase powder, the refractory nitrogen fluoride and the liquid by-product among the semiconductor waste gas are efficiently collected and filtered, do.

In addition, an embodiment of the present invention provides an air preheated to a semiconductor waste gas and provides heat from a heating unit to be efficiently converted from a semiconductor waste gas to solid phase powder, and also provides high heat from a heating unit, The decomposition efficiency of the decomposable nitrogen fluoride is excellent, and the cyclone system can efficiently collect and filter solid phase powder and liquid by-products without pressure loss. Here, the solid phase powder may be, for example, silicon (SiO ₂ ) obtained from silane (SiH ₄ ), and refractory nitrogen fluoride may be NF ₃ from which HF and / or F ₂ are decomposed.

In addition, an embodiment of the present invention increases the service life of the heating unit and the reaction chamber by supplying the preheated protective gas (for example, nitrogen gas) to the heating unit and the reaction chamber.

In addition, according to an embodiment of the present invention, the anti-swirl portion is provided in the solid-phase powder storage portion, so that the solid-phase powder does not flow backward in the direction of the heating cyclone from the solid-phase powder storage portion.

In an embodiment of the present invention, the solid phase powder still remaining in the semiconductor waste gas through the wet cyclone is secondarily collected and filtered. Furthermore, one embodiment of the present invention can change the gaseous byproducts including HF or F2 in the semiconductor waste gas into liquid byproducts by supplying water through the wet cyclone, and safely store them in the liquid byproduct storage.

1 is a perspective view illustrating a scrubber for treating a semiconductor waste gas using a cyclone according to an embodiment of the present invention.
FIGS. 2A, 2B, and 2C are side views showing a heating cyclone and a solid-phase powder storage unit of a scrubber for semiconductor waste gas treatment using a cyclone according to an embodiment of the present invention, a partial perspective view showing an installation state of an air- A heating cyclone, and a solid-phase powder storage unit.
3A and 3B are a perspective view and a cross-sectional view showing a part of a heating cyclone in a scrubber for semiconductor waste gas treatment using a cyclone according to an embodiment of the present invention.
4A and 4B are a perspective view and a cross-sectional view showing a part of a wet cyclone in a scrubber for semiconductor waste gas treatment using a cyclone according to an embodiment of the present invention.
5A and 5B are views for explaining the operation of a scrubber for semiconductor waste gas treatment using a cyclone according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more faithful and complete, and will fully convey the scope of the invention to those skilled in the art.

In the following drawings, thickness and size of each layer are exaggerated for convenience and clarity of description, and the same reference numerals denote the same elements in the drawings. As used herein, the term "and / or" includes any and all combinations of any of the listed items.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section to be described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

In addition, the term "semiconductor waste gas " as used herein includes nitrogen fluoride, i.e., PFC (perfluorocompound), which is mainly emitted in the etching and deposition (CVD) processes of the semiconductor manufacturing process. Further, "semiconductor waste gas" as used herein is a concept including odor and / or volatile organic compounds generated in fields other than the semiconductor manufacturing process.

1 is a perspective view showing a scrubber 100 for treating a semiconductor waste gas using a cyclone according to an embodiment of the present invention.

1, the scrubber 100 for treating a semiconductor waste gas according to the present invention includes a heating cyclone 110, a solid phase powder storage unit 120, a wet cyclone 130, and a liquid by-product storage unit 140 do.

The heating cyclone 110 supplies air and heat to the semiconductor waste gas so that the semiconductor waste gas is changed into solid phase powder and the solid phase powder is dropped and circulated downward by centrifugal force and gravity to collect and filter the solid phase powder. Also, the heating cyclone 110 may decompose the semiconductor waste gas into gaseous byproducts and transfer it to the wet cyclone 130.

For example, the heating cyclone 110 converts silane (SiH ₄ ) in the semiconductor waste gas into solid silicon (SiO ₂ ) powder and collects and filters it. In addition, the heating cyclone 110 decomposes the refractory nitrogen fluoride (e.g., NF ₃ ) in the semiconductor waste gas into gaseous byproducts such as HF and / or F ₂ and transfers it to the wet cyclone 130. At this time, a small amount of solid powder not collected may be transferred to the wet cyclone 130.

The solid-phase powder storage unit 120 stores the solid phase powder that is collected and filtered from the heating cyclone 110 described above.

The wet cyclone 130 is connected to the heating cyclone 110 and supplies water to the above-mentioned semiconductor waste gas (for example, HF and / or F _{2 in the} gaseous phase) to convert the semiconductor waste gas into a liquid byproduct, Collect and filter by-products. Further, the solid phase powder not collected in the heating cyclone 110 is also secondarily collected and filtered.

The liquid by-product storage part 140 is connected to the wet cyclone 130 to store the above-mentioned liquid by-product and the solid phase powder.

FIGS. 2A, 2B, and 2C are side views illustrating a heating cyclone 110 and a solid-phase powder storage unit 120 of a scrubber 100 for treating a semiconductor waste gas using a cyclone according to an embodiment of the present invention. The heating cyclone 110, and the solid-phase powder storage unit 120 according to an embodiment of the present invention.

2A, 2B, and 2C, the heating cyclone 110 of the scrubber 100 for treating semiconductor waste gas according to the present invention includes a cylindrical portion 111, a semiconductor waste gas inflow pipe 112, A heating section 114, a reaction chamber 115, a discharge tube 116, a protective gas preheating section 117, a conical section 118 and an air preheating section 119. In the drawings, reference numeral 101 denotes a heat insulating wall that substantially surrounds the cylindrical portion 111 to protect the cylindrical portion 111 from the external environment and to insulate it.

The cylindrical portion 111 has a cylindrical shape extending in the vertical direction by a predetermined length, the upper region is substantially clogged, and the lower region is opened toward the conical portion 118.

The semiconductor waste gas inlet pipe 112 is provided with a plurality of semiconductor waste gas inlet pipes 112 and is connected to the upper side surface of the cylindrical portion 111 to supply the semiconductor waste gas to the inside of the cylindrical portion 111. Here, the semiconductor waste gas inlet pipe 112 is provided in a direction substantially parallel to the tangential direction of the cylindrical portion 111, so that the semiconductor waste gas can be introduced substantially parallel to the tangential direction of the cylindrical portion 111. For example, four semiconductor waste gas inlet pipes 112 may be installed at intervals of approximately 90 degrees with respect to the cylindrical portion 111, and may be installed in a direction substantially parallel to the tangential direction of the cylindrical portion 111, The semiconductor waste gas flows naturally in the interior of the cylindrical portion 111 and flows from the upper portion to the lower portion.

Here, the number of the semiconductor waste gas inlet pipes 112 and the installation angle may be changed, and the present invention is not limited thereto. In addition, the semiconductor waste gas inlet pipe 112 is provided with a valve 112a so as to control or bypass the supply amount of the semiconductor waste gas. Further, the semiconductor waste gas inlet pipe 112 may be provided with a blower 112b for blowing semiconductor waste gas.

A plurality of air inlet pipes 113 are also provided and are connected to the upper region of the cylindrical portion 111 to supply air to the inside of the cylindrical portion 111. Here, since the semiconductor waste gas flows in a swirling flow inside the cylindrical portion 111, the air flows together with the swirling flow like the semiconductor waste gas. In addition, such air is supplied in a preheated state at about 80 to 200 DEG C, so that the reaction rate between the semiconductor waste gas and the air is improved. If the temperature is lower than the above range, the conversion efficiency to the solid phase powder is lowered. If the temperature range is higher than this range, the power consumption ratio is unnecessarily increased. Meanwhile, the air inlet pipe 113 is connected to the air preheating unit 119, which will be described below.

The heating portion 114 is installed to extend in a vertical direction in an inner region spaced apart from the cylindrical portion 111. [ That is, the heating part 114 is installed to extend from the upper part of the cylindrical part 111 to the inside of the cylindrical part 111 by a predetermined length, and the heating part 114 and the cylindrical part 111 are spaced apart from each other Space is formed. The above-described semiconductor waste gas and air flow together in this spaced-apart space and flow in a substantially downward direction. Further, the temperature of the spacing space is approximately 200 to 350 占 폚 according to the operation of the heating unit 114, and among these semiconductor waste gases, for example, the silane is changed into silicon solid phase powder. That is, if the temperature range is smaller than the above range, the conversion efficiency to the solid phase powder is lowered. If the temperature range is higher than this range, the power consumption ratio is unnecessarily increased. In addition, the heating portion 114 includes a plurality of bar-shaped heaters 114a and a cylindrical cover 114b that surrounds the outside of the bar-like heater 114a. Therefore, the rod-shaped heater 114a does not obstruct the flow of the swirling flow by the cylindrical cover 114b.

The reaction chamber 115 is provided inside the heating part 114 and extends in a cylindrical shape to the outside of the upper part of the cylindrical part 111 by a certain length. The temperature of the reaction chamber 115 increases to approximately 450 to 800 DEG C by the operation of the heating unit 114. [ Thus, the semiconductor waste gas passing through the reaction chamber 115, that is, the refractory nitrogen fluoride (for example, NF ₃ ) is decomposed into gaseous byproducts such as HF and / or F ₂ and transferred to the wet cyclone 130 . Of course, the non-dusted solid phase powder may also be delivered to the wet cyclone 130.

The discharge tube 116 is provided between the reaction chamber 115 and the wet cyclone 130. This is because the gaseous by-products such as HF and / or F ₂ formed by decomposition of the nitrogen fluoride in the semiconductor waste gas as described above, And transfers a small amount of the solid phase powder to the wet cyclone 130.

The protective gas preheating portion 117 is installed in the region of the reaction chamber 115 located outside the upper portion of the cylindrical portion 111 to preheat the protective gas, for example, nitrogen (N2) . More precisely, the protective gas pre-heating unit 117 preheats the protective gas and supplies the protective gas to the inner lower end of the reaction chamber 115, thereby forming a nitride film on the surface of the reaction chamber 115, HF and / or < RTI ID = 0.0 > F2. ≪ / RTI >

Here, the structure of the protective gas preheating part 117 may be provided in the discharge pipe 116 as shown in FIGS. 3A and 3B. This is described below again.

The conical portion 118 is connected to the lower side of the cylindrical portion 111 and is installed so that its diameter gradually decreases. Accordingly, the relatively heavy solid phase powder among the semiconductor waste gas that reaches the conical portion 118 and falls is dropped into the solid phase powder storage portion 120, and the remaining relatively light semiconductor waste gas (for example, NF ₃ ) while passing through a 115) is changed to vapor phase by-products, such as HF and / or F _2. Of course, the gaseous byproducts passing through the reaction chamber 115 are transferred to the wet cyclone 130 through the discharge pipe 116. That is, gaseous byproducts such as decomposed semiconductor waste gases HF and / or F ₂ and solid phase powder are transferred to the wet cyclone 130.

At the lower end of the conical portion 118, a gate plate 118a may be further provided to block the lower region of the conical portion 118 when maintenance or replacement of the solid-phase powder storage portion 120 is performed.

The air preheating portion 119 is provided inside or outside the conical portion 118 to form a certain space. That is, the air preheating unit 119 is installed at a predetermined distance from the surface of the conical portion 118 to the inside or outside, thereby preheating the air supplied to the air preheating unit 119 to a predetermined temperature. Of course, an air inlet pipe 113a is provided at the lower end of the air preheating unit 119, and an air outlet pipe 113b is provided at the upper end of the air preheating unit 119. [ Further, the air discharge pipe 113b is connected to the plurality of air inlet pipes 113 provided in the cylindrical portion 111 described above.

As shown in FIGS. 2A and 2C, the solid phase powder storage unit 120 of the scrubber 100 for processing semiconductor waste gas according to the present invention includes a solid phase powder box 121 and a swirl flow prevention unit 122.

The solid powder box 121 is formed in a substantially hexahedron shape and is coupled to the lower end of the conical portion 118. Accordingly, the solid phase powder relatively heavy from the heating cyclone 110 is accumulated in the solid phase powder box 121 through the conical portion 118.

The swirl flow prevention portion 122 includes a backflow prevention plate 122a provided at the entrance of the solid phase powder box 121 and a swirl flow prevention plate 122b provided inside the solid phase powder box 121. [ The solid phase powder in the solid phase powder box 121 is relatively light in weight and may rise to the conical portion 118 due to the swirling flow in the solid phase powder box 121. [ However, as described above, since the triangular-shaped check valve 122a is provided, the solid powder once entered into the solid phase powder box 121 is hardly raised to the conical portion 118 again. Further, the swirling flow is prevented by the swirl flow prevention plate 122b installed inside the solid powder box 121, thereby suppressing the swirling phenomenon of the solid phase powder in the solid phase powder box 121. [

FIGS. 3A and 3B are a perspective view and a cross-sectional view showing a part of a heating cyclone 110 in a scrubber 100 for treating a semiconductor waste gas using a cyclone according to an embodiment of the present invention.

3A and 3B, a discharge tube 116 is connected to the reaction chamber 115 of the heating cyclone 110. A surface of the discharge tube 116 is provided with a heating part 114, A protective gas preheating section 217 for supplying a protective gas to the protective gas preheating section 217 is provided. Of course, the protective gas inlet pipe 217a and the protective gas outlet pipe 217b are connected to the protective gas preheater 217. [ In addition, the protective gas discharge tube 217b is connected to the lower region of the heating portion 114 and / or the lower region of the reaction chamber 115 as described above. In the drawing, reference numeral 102 denotes a sensing tube to which various sensors are coupled.

4A and 4B are a perspective view and a cross-sectional view showing a part of a wet cyclone 130 in a scrubber 100 for treating a semiconductor waste gas using a cyclone according to an embodiment of the present invention.

4A and 4B, the wet cyclone 130 includes a cylindrical portion 131, a semiconductor waste gas inflow pipe 132, a discharge pipe 136, a water injection nozzle 137, and a conical portion 138 . Basically, such a wet cyclone 130 has a structure similar to that of the heating cyclone 110 described above.

The cylindrical portion 131 has a cylindrical shape extending in the vertical direction by a predetermined length, the upper region is substantially clogged, and the lower region is opened toward the conical portion 138.

The semiconductor waste gas inlet pipe 132 is coupled to the upper side surface of the cylindrical portion 131 to supply the semiconductor waste gas to the inside of the cylindrical portion 131. Here, the semiconductor waste gas inlet pipe 132 is provided substantially in parallel with the tangential direction of the cylindrical portion 131, so that the semiconductor waste gas can be introduced substantially parallel to the tangential direction of the cylindrical portion 131.

In addition, since the plurality of turning nozzles 131a are formed on the inner surface of the cylindrical portion 131 so as to be spaced apart from each other in the height direction, the semiconductor waste gas introduced through the semiconductor waste gas inlet pipe 132 can be more efficiently circulated . The turning nozzle 131a may be a groove having a predetermined length in the circumferential direction on the inner surface of the cylindrical portion 131 or a protrusion protruding by a predetermined length.

The discharge pipe 136 is installed to extend in the vertical direction in an inner region spaced apart from the cylindrical portion 131. That is, the discharge pipe 136 is installed to extend from the upper part of the cylindrical part 131 to the inside of the cylindrical part 131 by a predetermined length, and the discharge pipe 136 is provided between the discharge part 136 and the cylindrical part 131, . The semiconductor waste gas described above is circulated and flows downward in this spaced space. Further, since the discharge pipe 136 extends to the conical portion 138 by a certain length, the swirling flow of the semiconductor waste gas is efficiently formed also in the conical portion 138.

The water injection nozzle 137 is installed in the semiconductor waste gas inflow pipe 132 and the discharge pipe 136, respectively. The water injection nozzles 137 provided in the semiconductor waste gas inlet pipe 132 and the discharge pipe 136 respectively inject water into the semiconductor waste gas so that HF and / or F ₂ obtained by the heating unit 114 as described above Converts gaseous byproducts into liquid byproducts. Of course, such by-product of the liquid phase flows down to the lower liquid by-product storage portion 140 through the conical portion 138 by gravity.

The conical portion 138 is connected to the lower side of the cylindrical portion 131 and is installed so that its diameter gradually decreases. Therefore, the relatively heavy solid phase powder among the swirling semiconductor waste gas that has reached the conic section 138 falls to the liquid by-product storage section 140.

The liquid byproduct storage unit 140 is coupled to the lower end of the conical part 138 and includes a liquid byproduct box 141, a mesh net 142, a pH sensor 143, and a circulation pump 144. The liquid by-product box 141 is substantially in the shape of a hexahedron to store liquid by-products containing HF and / or F ₂ and silicon solid powder as described above. In addition, the mesh network 142 serves to store the solid phase powder only in a predetermined area, and the pH sensor 143 senses the pH of the liquid by-product to determine whether the liquid by-product is discharged. The circulation pump 144 discharges the internal liquid byproducts to the outside when the pH of the liquid by-product is higher than the reference value.

5A and 5B are views for explaining the operation of the scrubber 100 for treating semiconductor waste gas using a cyclone according to an embodiment of the present invention.

5A and 5B, the operation of the scrubber 100 for treating a semiconductor waste gas using the cyclone according to the present invention includes the steps of introducing a semiconductor waste gas S1, a preheating step S2, a solid phase powder generating step S3, , A solid phase powder removing step (S4), an oxidizing air heating step (S5), a reaction chamber heating step (S6), a refractory nitrogen fluoride decomposing step (S7), a byproduct generating step (S8) S9), a protective gas heating step S10, a wet cyclone operating step S11, and a discharge step S12. Although the operation of the present invention is described in a time series manner in FIG. 5A, it is only for the understanding of the present invention, and the present invention is not limited thereto. It should be understood that practically each step proceeds substantially at the same time. The operation of the present invention will be described in more detail.

In the semiconductor waste gas inflow step S1, the semiconductor waste gas such as nitrogen fluoride and the preheated oxidation air flow into the heating cyclone 110 at the same time. Here, the preheated air is obtained from the air preheating unit 119 installed in the cone part 118 of the heating cyclone 110. [

In the preliminary heating step S2, a temperature of approximately 200 to 350 DEG C is provided in the space between the cylindrical portion 111 and the heating portion 114 by the heating portion 114 provided in the heating cyclone 110, The above-mentioned semiconductor waste gas and preheated air are supplied to the temperature atmosphere.

In the solid phase powder generating step S3, the solid phase powder of the semiconductor waste gas is generated by the temperature atmosphere (200 to 350 deg. C) provided in the spacing space between the heating part 114 and the cylindrical part 111 as described above. For example, the silane is converted to silicon solid phase powder.

In the solid phase powder removing step S4, relatively heavy solid phase powder is poured into the solid phase powder storage part 120 through the conical part 118 by turning the semiconductor waste gas in the cylindrical part 111 and the conical part 118 It will accumulate.

In the oxidizing air heating step S5, the air is preheated by the air preheater 119 formed in the conic section 118, and is supplied to the heating cyclone 110, thereby oxidizing the semiconductor waste gas, To be changed into powder.

In the reaction chamber heating step (S6), the reaction chamber (115) is heated to a temperature of approximately 450 to 800 DEG C by the heating part (114).

In the refractory nitrogen fluoride decomposing step (S7), refractory nitrogen fluoride in the semiconductor waste gas is decomposed while passing through the reaction chamber 115.

The by-product generating step (S8), I-decomposable nitrogen gas phase and the fluoride through the reaction chamber 115, a by-product (for instance, HF and / or F ₂₎ is changed to.

In the semiconductor waste gas and by-product transfer step S9, the semiconductor waste gas and the by-product are transferred to the wet cyclone 130 through the reaction chamber 115 and the discharge pipe 116. [

In the protective gas heating step S10, a protective gas (for example, nitrogen gas) is preheated through the protective gas preheating unit 217 provided in the discharge pipe 116. The preheated protective gas is supplied to the heating cyclone 110, The heating unit 114 or the reaction chamber 115 of the heating unit 114 or the reaction chamber 115 to protect the heating unit 114 or the reaction chamber 115.

In the wet cyclone operation step S11, the water spray nozzle 137 is supplied to the gaseous byproduct to be changed into the liquid by-product, and at the same time, the liquid by-product and the solid phase powder are stored in the liquid by- do.

In the discharging step S12, clean air that has been filtered, collected, and cooled through the discharge pipe 136 provided in the wet cyclone 130 is discharged to the outside.

In this way, the semiconductor waste gas scrubber according to the present invention can effectively collect and filter the solid phase powder, the refractory nitrogen fluoride and the liquid by-products in the semiconductor waste gas by effectively connecting the heating cyclone and the wet cyclone in series, .

It is to be understood that the present invention is not limited to the above-described embodiment, but may be applied to other types of scrubbers, It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.

100; The scrubber for semiconductor waste gas treatment according to the present invention
101; An insulating wall 110; Heating cyclone
111; A cylindrical portion 112; Semiconductor waste gas inlet pipe
113; An air inlet pipe 114; The heating portion
115; Reaction chamber 116; discharge pipe
117; A protective gas preheating section 118; Conical part
119; Air preheating section 120; Solid phase powder storage
121; Solid phase powder box 122; Swirl flow prevention part
122a; A backflow prevention plate 122b; Swirl flow prevention plate
130; Wet cyclone 131; Cylindrical portion,
132; Semiconductor waste gas inlet pipe 136; discharge pipe
137; Water spray nozzle 138; Conical part
140; A liquid byproduct storage unit 141; Liquid by-product box
142; Mesh network 143; pH sensor
144; Circulation pump

Claims (17)

A heating cyclone for supplying air and heat to a semiconductor waste gas to change the semiconductor waste gas into solid phase powder and causing the solid phase powder to fall while rotating;
A solid phase powder storage unit connected to the heating cyclone to store the solid phase powder;
A wet cyclone connected to the heating cyclone for supplying water to the semiconductor waste gas to convert the semiconductor waste gas into a liquid byproduct; And
And a liquid byproduct storage portion connected to the wet cyclone to store the liquid byproduct,
The heating cyclone
A cylindrical portion extending in the vertical direction;
At least one semiconductor waste gas inlet pipe coupled to the cylindrical portion;
At least one air inlet tube coupled to the cylindrical portion;
A heating portion extending in a vertical direction to an inner region spaced apart from the cylindrical portion;
A reaction chamber disposed inside the heating unit and extending to the upper side of the cylindrical portion; And
And a conical part connected to a lower side of the cylindrical part and having a smaller diameter. delete The method according to claim 1,
Wherein the semiconductor waste gas inlet pipe is installed parallel to the tangential direction of the cylindrical portion. The method according to claim 1,
Wherein the conical portion further comprises an air preheating portion for supplying air preheated by the air inlet pipe. The method according to claim 1,
Wherein the reaction chamber further comprises a discharge pipe connected to the wet cyclone,
Wherein the discharge pipe further comprises a protective gas preheating unit for supplying a protective gas to the heating unit. 6. The method of claim 5,
Wherein the protective gas is supplied through the lower end of the heating unit or the reaction chamber. The method according to claim 1,
Wherein the temperature of the space between the cylindrical portion and the heating portion is 200 to 350 ° C. 8. The method of claim 7,
(SiH4) in the semiconductor waste gas is changed to silicon (SiO2) solid phase powder in a space separated from the cylindrical portion and the heating portion. The method according to claim 1,
Wherein the temperature of the reaction chamber is in the range of 450 to 800 ° C. 10. The method of claim 9,
Wherein the nitrogen fluoride (NF ₃ ) in the semiconductor waste gas is decomposed into HF or F ₂ in the reaction chamber. The method according to claim 1,
Wherein the temperature of air through the air inlet pipe is 80 to 200 ° C. The method according to claim 1,
Further comprising a swirl flow prevention part for preventing swirl flow of the solid phase powder in the solid phase powder storage part. The method according to claim 1,
The wet cyclone
A cylindrical portion extending in the vertical direction;
A semiconductor waste gas inlet pipe coupled to the cylindrical portion;
A discharge pipe extending in a vertical direction to an inner region spaced apart from the cylindrical portion; And
And a conical portion connected to the lower end of the cylindrical portion and having a smaller diameter. 14. The method of claim 13,
Wherein at least one water injection nozzle is further installed in the semiconductor waste gas inlet pipe of the wet cyclone. 14. The method of claim 13,
Wherein at least one water injection nozzle is further installed in the discharge pipe of the wet cyclone. 14. The method of claim 13,
Wherein the semiconductor waste gas inlet pipe of the wet cyclone is installed so that the semiconductor waste gas flows in parallel to the tangential direction of the cylindrical portion of the wet cyclone. 14. The method of claim 13,
Wherein a plurality of swirl nozzles are further formed in the cylindrical portion of the wet cyclone to swirl the semiconductor waste gas flowing through the semiconductor waste gas inflow pipe of the wet cyclone.

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