KR101508855B1 - Apparatus and method to protect reverse current making error for temperature or resistance acquisition through bias resistance - Google Patents

Abstract

A voltage distributor having redundancy includes: a first voltage distributor which distributes an applied voltage; a second voltage distributor which is connected with the first voltage distributor and is the redundancy of the first voltage distributor; a first reverse current preventer which prevents a reverse current which flows into the second voltage distributor from the first voltage distributor; and a second reverse current preventer which prevents a reverse current which flows into the first voltage distributor from the second voltage distributor.

Description

FIELD OF THE INVENTION [0001] The present invention relates to an apparatus and a method for preventing bias resistance reverse current in a channel for obtaining temperature information and resistance information,

The present invention relates to a device and a method for preventing reverse current to a bias resistance of a channel, and more particularly, to a device that supports redundancy and cross-strapping for improving stability while obtaining temperature information or resistance value And methods.

In the case of satellites or aircraft that require high stability, redundancy is indispensable to ensure stable operation even in the event of a failure.

In addition, cross-strapping is required between the primary unit and the redundant unit to prevent single point failures.

A constant current source can be used to obtain temperature information or to verify the resistance value. The constant current source can use a thermistor having a resistance value that changes according to the temperature. The voltage can be converted using the Ohm's law, and the resistance value can also be calculated.

In the case of the constant current, there is no problem of generation of reverse current in the case of cross-strapping, but a plurality of semiconductor elements are required to constitute the constant current source.

Therefore, when the area is important, there is a need for an apparatus and method for obtaining temperature information or obtaining a resistance value without using a constant current source.

According to one aspect, a first voltage divider that distributes an applied voltage; A second voltage divider coupled to the first voltage divider, the second voltage divider being a redundancy of the first voltage divider; A first reverse current inhibitor for preventing a reverse current flowing from the first voltage divider to the second voltage divider; And a second reverse current protector for preventing a reverse current flowing from the second voltage divider to the first voltage divider.

According to one embodiment, the first reverse current blocking device and the second reverse current blocking device include at least one of an NMOSFET (N-channel Metal Oxide Semiconductor Field Effect Transistor) and a PMOSFET (P channel Metal Oxide Semiconductor Field Effect Transistor) .

According to another embodiment, the first voltage divider includes a first bias resistor and a first thermistor resistor, the second voltage divider includes a second bias resistor and a second thermistor resistor, the first reverse current The inhibitor may be coupled between the first bias resistor and the first thermistor resistor and the second reverse current protector may be coupled between the second bias resistor and the second thermistor resistor.

Also, the first reverse current blocking device may include a first transistor, the second reverse current blocking device may include a second transistor, the first bias resistor may be connected to the drain terminal of the first transistor, A resistor may be connected to the drain terminal of the second transistor.

The first thermistor resistor may be coupled to the source terminal of the first transistor and the second thermistor resistor may be coupled to the source terminal of the second transistor.

The first reverse current blocking device may further include: a first resistor connected to a first node connected to a gate terminal of the first transistor and a ground; And a second resistor coupled between the first node and the power supply, wherein the second reverse current protector further comprises: a third resistor connecting a second node connected to the gate terminal of the second transistor and the ground; And a fourth resistor connecting the second node and the power supply unit.

The voltage supply unit may include: a first voltage supply unit connected to the second resistor or the fourth resistor; And a second voltage supply connected to the first bias resistor or the second bias resistor.

According to an embodiment, the first voltage supply unit may supply a higher voltage than the second voltage supply unit.

According to another aspect, there is provided a method comprising: distributing a voltage to which a first voltage divider is applied; Distributing the voltage to which the second voltage divider, which is the redundancy of the first voltage divider, is applied if the first voltage divider is not operating; Preventing a reverse current from flowing into the first voltage divider from the second voltage divider; And preventing a reverse current from flowing from the first voltage divider to the second voltage divider in the second reverse current blocking device.

According to another aspect, there is provided a computer-readable recording medium on which a program for performing the above method is recorded.

1 is a block diagram illustrating a configuration of a voltage divider having redundancy according to an embodiment.
2 is a circuit diagram illustrating temperature information and a resistance value using a voltage divider according to an embodiment.
3 is a circuit diagram illustrating a voltage divider having cross-strained redundancy, according to one embodiment.
4 is a graph illustrating diode voltage enhancement with changes in ambient temperature, in accordance with one embodiment.
5 is an exemplary diagram showing a circuit diagram when the voltage supply section is turned off according to an embodiment.
6 is an exemplary diagram showing a circuit diagram when the voltage supply section is turned on according to one embodiment.
7 is a flowchart showing a procedure of a method of controlling a voltage divider having redundancy according to an embodiment.

In the following, some embodiments will be described in detail with reference to the accompanying drawings. However, it is not limited or limited by these embodiments. Like reference symbols in the drawings denote like elements.

Although the terms used in the following description have selected the general terms that are widely used in the present invention while considering the functions of the present invention, they may vary depending on the intention or custom of the artisan, the emergence of new technology, and the like.

Also, in certain cases, there may be terms chosen arbitrarily by the applicant for the sake of understanding and / or convenience of explanation, and in this case the meaning of the detailed description in the corresponding description section. Therefore, the term used in the following description should be understood based on the meaning of the term, not the name of a simple term, and the contents throughout the specification.

1 is a block diagram illustrating a configuration of a voltage divider having redundancy according to an embodiment.

The voltage divider 100 having redundancy may include a first voltage divider 110, a second voltage divider 120, a first reverse current protector 130 and a second reverse current protector 140.

The first voltage divider 110 may distribute the applied voltage. The second voltage divider 120 may be coupled to the first voltage divider 110 and may be a redundancy of the first voltage divider 110.

The first reverse current protector 130 may prevent reverse current flowing from the first voltage divider 110 to the second voltage divider 120 and the second reverse current protector 140 may prevent the reverse current from flowing into the second voltage divider 120 To the first voltage divider 110 can be prevented.

The first reverse current protector 130 and the second reverse current protector 140 may include at least one of an NMOSFET (Metal Oxide Semiconductor Field Effect Transistor) and a P-channel Metal Oxide Semiconductor Field Effect Transistor (PMOSFET) have.

In general, a MOSFET is a symmetric structure and can be used symmetrically because there is no difference between source and drain. The PMOSFET can be used as a switch that can be turned on when the gate is lower than the source by a threshold voltage (V _th ) and the input can be transferred to the output.

Therefore, when the voltage applied to the gate is a ground having a generally low potential (assuming a threshold voltage of 0.7V), when the source voltage becomes 0.7V or less, the PMOSFET turns off and outputs the input to the output I can not deliver it. Therefore, in order to cut off the PMOSFET, the PMOSFET can be turned off only when the same voltage as the source node is applied to the gate.

The NMOSFET can be used as a switch that can be turned on when the gate is as high as the threshold voltage of the source, allowing the input to be delivered to the output. Thus, if the gate is normally the highest potential VDD, and the source is at VDD - 0.7 or higher (assuming a threshold voltage of 0.7V), then the NMOSFET is turned off and can not deliver the input to the output.

According to one embodiment, the second voltage divider 120 may be the redundancy of the first voltage divider 110, so that when the first voltage divider 110 is off, And can serve as a distributor 110. That is, the second voltage divider 120 can distribute the applied voltage.

According to an embodiment, the first voltage divider 110 and the second voltage divider 120 are connected, and a reverse current may be generated. The first reverse current blocking device 130 may prevent a reverse current flowing from the first voltage divider 110 to the second voltage divider 120. The first reverse current blocking device 130 may include a transistor.

2 is a circuit diagram illustrating temperature information and a resistance value using a voltage divider according to an embodiment.

According to one embodiment, temperature information or resistance value can be confirmed by using a voltage divider method.

The voltage across the thermistor resistor in the voltage divider is shown in Equation (1).

The voltage divider may include a first voltage divider 110 and a second voltage divider 120. Even when the second voltage divider 120 is turned off, a reverse current is generated in the bias resistor of the second voltage divider 120, and an error may occur in the current flowing in the thermistor resistor.

Since the accuracy of temperature information or resistance information to acquire the analog voltage is important, the reverse current may affect the current flowing in the thermistor resistor. That is, the current flowing in the thermistor resistor can be measured largely or in small by the reverse current.

3 is a circuit diagram illustrating a voltage divider having cross-strained redundancy, according to one embodiment.

According to one embodiment, when the number of channels to be acquired increases as a satellite or a flying object increases, temperature information and the like can be obtained using a voltage divider.

According to one embodiment, when both 310 and 320 are powered on, the bias resistors are connected in parallel so that the bias resistance is halved. 310, and 320, power consumption may be increased when power is turned on.

According to another embodiment, when one of the transistors 310 and 320 is turned off, a reverse current may be generated through the power supply line. If a reverse current is generated, a voltage error in the thermistor resistance may occur due to the load effect. If an error occurs, it may not be possible to obtain an accurate value. When one of the switches 310 and 320 is turned off, a reverse current may be generated.

Further, in the case of turning off one of 310 and 320, it is also possible to use a MUX maintaining a high impedance in order to minimize the occurrence of reverse current. When the MUX is used, since the voltage stabilization time is generated for each selected channel, delay in acquiring status information may occur. In addition, there is a problem that the bias resistance can be selected only in a group of MUX units. For example, the HS-1840 MUX is a 16-channel MUX, which can limit the flexibility of choice that all 16 channels must be used with only one type of bias resistor.

4 is a graph illustrating diode voltage enhancement with changes in ambient temperature, in accordance with one embodiment.

According to one embodiment, a diode may be used to block the generation of a reverse current in the bias resistor. In the case of a forward bias in a diode, a voltage drop may occur by the diode. When a voltage drop occurs, approximately 0.7 V can be reduced and the resolution can be reduced.

The reduction in resolution and the voltage drop due to the diode can vary depending on the ambient temperature and the current flowing through the diode. Because analog state information is important for accuracy, changes in voltage drop can directly affect accuracy and cause errors.

5 is an exemplary diagram showing a circuit diagram when the voltage supply section is turned off according to an embodiment. 6 is an exemplary diagram showing a circuit diagram when the voltage supply section is turned on according to one embodiment.

According to one embodiment, the voltage divider with redundancy may include a first voltage divider that distributes the applied voltage, a second voltage divider that is connected to the first voltage divider and is a redundancy of the first voltage divider. In the case of FIG. 5, only the primary voltage divider is shown, and the redundancy voltage divider is not shown.

A first reverse current prevention device 510 for preventing reverse current flowing from the first voltage divider to the second voltage divider, a second reverse current prevention device 510 for preventing reverse current flowing from the second voltage divider to the first voltage divider, . ≪ / RTI >

According to one embodiment, the first reverse current protector 510 and the second reverse current protector may comprise transistors. The transistor may correspond to at least one of an NMOSFET and a PMOSFET.

According to one embodiment, a transmission gate can be used to improve the transfer characteristics for both the HIGH and the LOW in the CMOS. Generally, when power is supplied, the transmission gate operates normally, and when the voltage control is low, it is turned off, and it is possible to maintain a high impedance. If the power supply is off, even if the voltage control is held low because it is impossible to maintain the potential for turning off the PMOS, the NMOS is turned off but the PMOS is not maintained in the turn-off state so that the high impedance can be maintained none.

Therefore, since it is possible to cut off the PMOS only when a voltage is present, it is difficult to maintain the high impedance because it is difficult to maintain the power when the power is off. In the case of the NMOS, since the ground (GND) is cut off, the ground can be held anywhere connected to the structure and can be cut off even if it is off.

According to one embodiment, when the power supply supplied by the electronic equipment is normal, the VDD power supply is not a problem, but it may not be possible to maintain VDD when the power supply is abnormal or off. The ground is available regardless of the power supply, so you can always use the structure or ground reference.

Specifically, the first voltage divider may include a first bias resistor 520 resistor and a first thermistor resistor 530. A first reverse current protector 510 may be coupled between the first bias resistor 520 and the first thermistor resistor 530. The first voltage divider can acquire the analog voltage, and the first voltage divider can be used to obtain the temperature information or to confirm the resistance value.

The second voltage divider may also include a second bias resistor and a second thermistor resistor. A second reverse current protector may be coupled between the second bias resistor and the second thermistor resistor.

According to one embodiment, the first reverse current protector 510 includes a first transistor 511, a first bias resistor 520 is coupled to a drain terminal of the first transistor 511, And may be connected to the drain terminal of the second transistor.

Also, the second reverse current blocking device may include a second transistor, and the second bias resistor may be connected to the drain terminal of the second transistor.

The first thermistor resistor 530 may be coupled to the source terminal of the first transistor 511 and the second thermistor resistor may be coupled to the source terminal of the second transistor.

According to one embodiment, the first reverse current blocking device 510 includes a first resistor 512 connecting the first node connected to the gate terminal of the first transistor 511 and the ground, a first resistor 512 connecting the first node 511 and the power supply The second resistor 513 may be further provided. The first resistor 512 is connected to the first node connected to the gate terminal, thereby preventing the gate terminal from being always grounded. The second resistor 513 can prevent a sudden power supply from the power supply unit and contribute to the stability of the circuit.

According to another embodiment, the second reverse current prevention device further includes a third resistor connecting a second node connected to the gate terminal of the second transistor and the ground, and a fourth resistor connecting the second node and the power supply part can do.

In addition, the voltage supply unit may include a first voltage supply connected to the second resistor 513 or a fourth resistor, a first bias resistor 520, or a second voltage supply connected to the second bias resistor. The first voltage supply unit may supply a higher voltage than the second voltage supply unit.

According to one embodiment, when the NMOS is used together with the bias resistor as shown in FIG. 5, the NMOS gate can be held at the ground by the pull-up resistor when the power supply is turned off. Therefore, in this case, a cutoff occurs and reverse current can be prevented.

According to another embodiment, when the power is turned on, the relay is turned on and 15V is applied to the gate of the NMOS. In this case, the bias can be performed through the NMOS. The bias power can be applied to 5V. Since the gate voltage is 15V, the NMOS can transfer the voltage up to 14.3V normally even when the voltage is 15V at the threshold voltage (for example, 0.7V). Therefore, the bias power is 5V It is possible to do.

The NMOS can be set for each channel. When the power is turned on, the NMOS normally transmits the voltage. When the NMOS is off, the high impedance is always maintained through the ground of the structure. Thus, reverse current can be prevented. Prevention of reverse current can prevent analog information errors. Also, the area occupied by the MUX can be reduced. The reverse current can be prevented through the NMOS for each channel, the bias resistance can be set for each channel, and the delay time due to the stabilization time does not occur like the MUX.

As shown in FIG. 5, since the power source is floating when the relay is OFF, the voltage for biasing the gate of the NMOS is grounded through the pull-up resistor, so that the gate of the NMOS is grounded and the thermistor resistor is connected to the ground, It can not be a voltage. Since NMOS can not be turned on, reverse current can always be prevented.

As shown in FIG. 6, when the relay is on, the NMOS is turned on by applying 15V, so that the bias voltage can be transmitted to the thermistor resistor.

7 is a flowchart showing a procedure of a method of controlling a voltage divider having redundancy according to an embodiment.

Step 710 is a step of confirming whether the first voltage divider is operating. If the first voltage divider is on, the process proceeds to step 720, and if the first voltage divider is off, the process proceeds to step 740.

Step 720 is the step of distributing the voltage to which the first voltage divider is applied.

Step 730 is a step of preventing a reverse current from flowing from the second voltage divider to the first voltage divider.

Step 740 is the step of distributing the voltage to which the second voltage divider is applied if the first voltage divider is not operating.

Step 750 is a step for preventing a reverse current from flowing from the first voltage divider to the second voltage divider.

The apparatus described above may be implemented as a hardware component, a software component, and / or a combination of hardware components and software components. For example, the apparatus and components described in the embodiments may be implemented within a computer system, such as, for example, a processor, a controller, an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable array (FPA) A programmable logic unit (PLU), a microprocessor, or any other device capable of executing and responding to instructions.

The processing device may execute an operating system (OS) and one or more software applications running on the operating system. The processing device may also access, store, manipulate, process, and generate data in response to execution of the software.

For ease of understanding, the processing apparatus may be described as being used singly, but those skilled in the art will recognize that the processing apparatus may have a plurality of processing elements and / As shown in FIG. For example, the processing unit may comprise a plurality of processors or one processor and one controller. Other processing configurations are also possible, such as a parallel processor.

The software may include a computer program, code, instructions, or a combination of one or more of the foregoing, and may be configured to configure the processing device to operate as desired or to process it collectively or collectively Device can be commanded.

The software and / or data may be in the form of any type of machine, component, physical device, virtual equipment, computer storage media, or device , Or may be permanently or temporarily embodied in a transmitted signal wave. The software may be distributed over a networked computer system and stored or executed in a distributed manner. The software and data may be stored on one or more computer readable recording media.

The method according to an embodiment may be implemented in the form of a program command that can be executed through various computer means and recorded in a computer-readable medium. The computer-readable medium may include program instructions, data files, data structures, and the like, alone or in combination. The program instructions to be recorded on the medium may be those specially designed and configured for the embodiments or may be available to those skilled in the art of computer software.

Examples of computer-readable media include magnetic media such as hard disks, floppy disks and magnetic tape; optical media such as CD-ROMs and DVDs; magnetic media such as floppy disks; Magneto-optical media, and hardware devices specifically configured to store and execute program instructions such as ROM, RAM, flash memory, and the like.

Examples of program instructions include machine language code such as those produced by a compiler, as well as high-level language code that can be executed by a computer using an interpreter or the like.

The hardware devices described above may be configured to operate as one or more software modules to perform the operations of the embodiments, and vice versa.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. For example, it is to be understood that the techniques described may be performed in a different order than the described methods, and / or that components of the described systems, structures, devices, circuits, Lt; / RTI > or equivalents, even if it is replaced or replaced.

Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims.

Claims (16)

A first voltage divider for distributing an applied voltage;
A second voltage divider coupled to the first voltage divider, the second voltage divider being a redundancy of the first voltage divider;
A first reverse current inhibitor for preventing a reverse current flowing from the first voltage divider to the second voltage divider; And
And a second reverse current prevention unit for preventing a reverse current flowing into the first voltage divider from the second voltage divider,
/ RTI > The method according to claim 1,
Wherein the first reverse current prevention device and the second reverse current prevention device have redundancy including at least one of an NMOSFET (N-channel Metal Oxide Semiconductor Field Effect Transistor) and a PMOSFET (P-channel Metal Oxide Semiconductor Field Effect Transistor). The method according to claim 1,
Wherein the first voltage divider comprises a first bias resistor and a first thermistor resistor and the second voltage divider comprises a second bias resistor and a second thermistor resistor,
Wherein the first reverse current protector is coupled between a first bias resistor and a first thermistor resistor and the second reverse current protector has redundancy connected between a second bias resistor and a second thermistor resistor. The method of claim 3,
Wherein the first reverse current blocking device includes a first transistor and the second reverse current blocking device includes a second transistor,
Wherein the first bias resistor is connected to the drain terminal of the first transistor and the second bias resistor has a redundancy connected to a drain terminal of the second transistor. 5. The method of claim 4,
Wherein the first thermistor resistor is connected to the source terminal of the first transistor and the second thermistor resistor has redundancy connected to the source terminal of the second transistor. 6. The method of claim 5,
The first reverse current prevention device includes:
A first resistor for connecting a ground to a first node connected to a gate terminal of the first transistor; And
Further comprising a second resistor connecting the first node and a power supply,
The second reverse current prevention device includes:
A third resistor connected between a second node connected to a gate terminal of the second transistor and the ground; And
And a fourth resistor connecting the second node and the power supply. The method according to claim 6,
Wherein the voltage supply unit includes:
A first voltage supply connected to the second resistor or the fourth resistor; And
And a second voltage supply connected to the first bias resistor or the second bias resistor. 8. The method of claim 7,
Wherein the first voltage supply unit has a redundancy that supplies a higher voltage than the second voltage supply unit. Distributing a voltage to which the first voltage divider is applied;
Distributing the voltage to which the second voltage divider, which is the redundancy of the first voltage divider, is applied if the first voltage divider is not operating;
Preventing a reverse current from flowing into the first voltage divider from the second voltage divider; And
Preventing a second reverse current blocking device from flowing back into the second voltage divider from the first voltage divider
Wherein the voltage divider has a redundancy. 10. The method of claim 9,
Wherein the first voltage divider comprises a first bias resistor and a first thermistor resistor and the second voltage divider comprises a second bias resistor and a second thermistor resistor,
Wherein the first reverse current inhibitor is coupled between a first bias resistor and a first thermistor resistor and the second reverse current protector has redundancy connected between a second bias resistor and a second thermistor resistor. 11. The method of claim 10,
Wherein the first reverse current blocking device includes a first transistor and the second reverse current blocking device includes a second transistor,
Wherein the first bias resistor is connected to a drain terminal of the first transistor and the second bias resistor has a redundancy connected to a drain terminal of the second transistor. 12. The method of claim 11,
Wherein the first thermistor resistor is connected to a source terminal of the first transistor and the second thermistor resistor has a redundancy connected to a source terminal of the second transistor. 13. The method of claim 12,
The first reverse current prevention device includes:
A first resistor for connecting a ground to a first node connected to a gate terminal of the first transistor; And
Further comprising a second resistor connecting the first node and a power supply,
The second reverse current prevention device includes:
A third resistor connected between a second node connected to a gate terminal of the second transistor and the ground; And
And a fourth resistor connecting the second node and a power supply. ≪ Desc / Clms Page number 20 > 14. The method of claim 13,
Wherein the voltage supply unit includes:
A first voltage supply for connecting the second resistor or the fourth resistor; And
And a second voltage supply for connecting the first bias resistor or the second bias resistor. 15. The method of claim 14,
Wherein the first voltage supply unit has a redundancy that supplies a voltage higher than that of the second voltage supply unit. A computer-readable recording medium having recorded thereon a program for performing the method according to any one of claims 9 to 15.

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