KR101486529B1 - Quantum Dot and Method of Manufacturing The Same - Google Patents

Abstract

The present invention relates to a quantum dot having quantum dot cores made of an alloy type and having at least one shell layer to enhance stability and quantum efficiency, thereby achieving high luminous efficiency and sharpness, and a manufacturing method thereof. To this end, the quantum dot and its manufacturing method according to the present invention are nanoparticles composed of a core of a multicomponent alloy type structure and at least one shell layer formed on the surface of the core, the core size is 1 to 10 nm, The size is 2 to 25 nm and is characterized by being synthesized by the dry arrangement method. In addition, it is also possible to disperse the quantum dots of the core / shell layer structure formed in the second step and the second step of forming at least one shell layer on the quantum dot core synthesized with the first step of synthesizing the alloy type quantum dot core, And a third step of separating and obtaining quantum dots of the final form.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quantum dot,

The present invention relates to a quantum dot having quantum dot cores made of an alloy type and having a single or multiple shell layers to enhance stability and quantum efficiency, thereby achieving high luminous efficiency and sharpness, and a manufacturing method thereof.

In general, fluorescent materials are widely used for material research, physico-chemical interaction studies, and biochemical studies of cells. In this regard, studies on quantum dot particles occurring in a narrow wavelength band, which is much stronger than that of a fluorescent substance, have been actively conducted.

A quantum dot is a nanometer sized semiconductor crystal made by a chemical synthesis process. When it is stimulated by energy such as light, it emits light, and the color of emitted light changes according to the size of the particle. Quantum dots having a size of several nanometers exhibit a unique behavior called a quantum effect and can be applied to various products such as ultrafine semiconductor, disease diagnosis reagent, and display for creating a high efficiency light emitting device.

On the other hand, the quantum dots are core of nano-sized II-IV semiconductor particles (CdSe, CdTe, CdS, etc.). Quantum dots using II-IV compound semiconductors composed of Group II elements and Group IV elements on the periodic table are the most promising materials for emitting light with high luminescence efficiency, optical stability, and visible range. come. The fluorescence of the quantum dots is the light generated by electrons falling from the conduction band to the valence band. Quantum dots have many properties different from general fluorescent dyes. Although the quantum dots consist of the same material center, the fluorescence wavelength varies depending on the particle size. In addition, as the particle size decreases, the fluorescence of a short wavelength is generated, and the fluorescence of the visible light region of the desired wavelength can be almost completely controlled by adjusting the size.

In addition, unlike a general organic fluorescent compound, fluorescence can be obtained even if an excitation wavelength is arbitrarily selected. Therefore, when a plurality of quantum dots are coexisted, fluorescence of various colors can be observed at a time when light is emitted with a single wavelength. In addition, the extinction coefficient is 100 to 1000 times higher than that of a general dye, and the quantum yield is high. Since the quantum dots only observe the transition from the ground vibration stst of the conduction band to the bottom vibration state of the lattice band, the fluorescence wavelength is almost monochromatic. In addition, the dye is decomposed by the photochemical reaction in the excited state to cause photobleaching, whereas the quantum dot is very stable.

In general, the QDs are 10 ~ 15nm nanoparticles composed of a center of about 2 ~ 10nm and a shell composed mainly of ZnS and coated with a polymer to disperse on the aqueous solution. There are various conjugation groups according to the use of the polymer, and quantum dots in which a linking group is present to cause a specific reaction with a cell or a biomolecule are most commercially available.

Conventionally, a dry chemical method for forming quantum dots by lattice mismatch with a substrate prepared in a vacuum by using metal organic chemical vapor deposition (MOCVD) has been used as a conventional method for producing quantum dots. This method is advantageous in that nanoparticles can be formed on a substrate and can be simultaneously arranged and observed. However, expensive synthesis equipment is required and it is difficult to synthesize a quantum dot having a uniform size in large quantities. To solve these problems, a wet chemical method of synthesizing quantum dots of uniform size by using a surfactant has been developed. A method of preparing quantum dots using wet chemical method is to synthesize various quantum dots having uniform size by controlling the degree of adsorption of the crystal surface and surfactant of nanoparticles by preventing the aggregation of nanoparticles using a surfactant to be.

However, in the conventional center / shell structure quantum dots, when the shell is formed thick, the interface becomes unstable due to the lattice mismatch between the central semiconductor material and the shell semiconductor material, so that the quantum efficiency is lowered and the shell is thinned. Therefore, since the material forming the shell only plays a role of stabilizing the surface state of the central quantum dots and does not serve to transfer electrons and holes to the center after absorbing the light, the light efficiency, the light stability, and the environmental stability In the United States.

Therefore, in order to minimize the lattice mismatch between the quantum dots, a study was made to fabricate multiple shells including the middle layer shells. For example, cadmium selenide (CdSe) / cadmium sulfide (CdS) / zinc sulfide (ZnS) (Korean Patent Laid-open No. 10-2005-0074779). Since the center / multi-shell structure quantum dots have high luminescence efficiency and optical stability and environmental stability, they have many applications as luminescent materials, lasers, and biochemical markers. However, in order to form the quantum dots of the conventionally developed core / multi-shell structure, it is necessary to synthesize the central quantum dots, to complete the synthesis process, to wash away both the surfactant and the precursor, and to bury the intermediate- The precursor of the precursor is injected at an appropriate temperature and the reaction proceeds for a long time. In addition, there is a disadvantage that economic loss is inevitable by losing part of the quantum dots and unreacted precursors formed when the surfactant is washed away. In addition, the quantum dot having a laminated structure produced by such a method has only limitations in the photoluminescence efficiency because it uses only the excitons formed by absorption at the center, and the excitons formed by absorption in the shells do not contribute to light emission .

On the other hand, it is difficult to maintain the intrinsic luminescence intensities of the quantum dots by the method of preparing the useful solid form by impregnating the quantum dot nanoparticles from the solution state into the polymer or metal oxide matrix, The polymer is inevitably affected by a chemical reaction while being subjected to polymer polymerization and sol-gel reaction.

In recent years, research and development have been conducted in which quantum dot nanoparticles are directly mixed with a thermosetting resin and then cured by heating to form a quantum dot-polymer composite, which is then applied to an LED light source. However, the quantum dots are mixed with a thermosetting resin The compatibility between the quantum dot and the thermosetting resin is not always ensured depending on the kind of the ligand, which is a dispersion stabilizer adsorbed on the surface of the quantum dot, and thus it is difficult to apply such a technique. Further, a method of preparing a quantum dot complex by mixing a precursor of a metal oxide after adsorbing a ligand capable of inducing a sol-gel reaction to the quantum dot nanoparticles has a heating temperature of several hundreds of degrees Celsius as a subsequent step, Is vulnerable to denaturation.

Therefore, it is still required to develop quantum dots of high crystal having higher luminescence efficiency, optical stability, and environmental stability, and a technique for easily mass-synthesizing them in a more economical manner.

Korean Patent Publication No. 10-2005-0074779

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a quantum dot core in an alloy type and to form a single or a plurality of shell layers to improve stability and quantum efficiency, And a method of manufacturing the quantum dot.

The above object is achieved by a nanoparticle consisting of a core of a multicomponent alloy type structure and at least one shell layer formed on the surface of the core, wherein the core size is 1 to 10 nm, the nanoparticle size is 2 to 25 nm, And the quantum dot is synthesized by a dry arrangement method.

Here, the core of the multicomponent alloy type structure may be a ternary or higher order.

Here, the multi-component system may be at least two selected from the group consisting of indium, phosphorus, zinc, gallium, tin, cadmium, selenium, mercury, sulfur, mercury, polonium and tellurium.

Here, the quantum dots may be dispersed in at least one dispersion solvent selected from the group consisting of hexane, toluene, hexene and chloroform.

The quantum dot manufacturing method includes a first step of synthesizing an alloy type quantum dot core, a second step of forming at least one shell layer on the synthesized quantum dot core, and a second step of forming a quantum dot of the core / shell layer structure formed in the second step Dispersed, and separated from the minor reactant to obtain the final form of quantum dots.

Preferably, the first step is to mix an at least one metal component and tris (trimethylsilyl) phosphine, and then heat the mixture at 110 to 300 ° C to synthesize an alloy type quantum dot core.

Preferably, in the second step, at least one ZnS shell layer may be formed by mixing the surface of the quantum dot core with thiol in the mixture of zinc stearate and dodecane, followed by heating to 150 to 300 ° C.

Preferably, the second step is to form a ZnSe shell layer with zinc stearate and selenium solution, further adding zinc stearate and dithercanethiol to the surface of the ZnSe shell layer to further form a ZnSe / ZnS shell layer can do.

Here, the quantum dots of the final shape can be adjusted in size, absorption and emission wavelength band by controlling the molar ratio of the constituent components.

INDUSTRIAL APPLICABILITY According to the present invention, the quantum dot core is made into an alloy type, and single or multiple shell layers are formed to enhance stability and quantum efficiency. Further, in the method for manufacturing a quantum dots, it is possible to increase the productivity during the production of the quantum dots by lowering the use and steps of the additional solvent for removing the solvent and the like used in the reaction, and to lower the production cost.

1 is a schematic diagram of a quantum dot manufacturing method according to the present invention.
Fig. 2 shows the absorption and emission spectra of the InZnP / ZnS quantum dots prepared in Example 1. Fig.
Fig. 3 shows the absorption and emission spectra of the InZnP / ZnS quantum dots prepared in Example 2. Fig.
4 shows the absorption and emission spectra of the InGaP / ZnS quantum dots prepared in Example 3. Fig.
5 shows the absorption and emission spectra of the InGaZnP / ZnS quantum dots prepared in Example 4. Fig.
6 is an absorption and emission spectrum of the InZnP / ZnSeS quantum dot prepared in Example 5. FIG.
FIG. 7 shows the absorption and emission spectra of the InZnP / ZnSe / ZnS quantum dots prepared in Example 6. FIG.

Hereinafter, the present invention will be described in detail with reference to embodiments and drawings of the present invention. It will be apparent to those skilled in the art that these embodiments are provided by way of illustration only for the purpose of more particularly illustrating the present invention and that the scope of the present invention is not limited by these embodiments .

Quantum dots have been actively studied for basic physical properties and interaction with other materials because of their unique and useful optical properties. So far, quantum dots have been developed largely as particles for application in biotech fields, but they are thought to be useful probes for researchers in materials engineering, chemistry, and chemical engineering. In particular, It is expected that various types of materials can be made.

The quantum dot according to the present invention is a nanoparticle having a size of 2 to 25 nm with a core having a quantum dot having a multicomponent alloy-like structure as a core, a core having a size of 1 to 10 nm, and one or more shells on the outside. At this time, considering the light-emitting property and ease of manufacture in the visible light region, A size of 2 to 20 nm is preferable. Here, by controlling the molar ratio of the quantum dot constituent, the size and the wavelength band of the formed quantum dot can be controlled. The quantum dots are manufactured using a dry batch method, and the dry batch method is a well-known technique and will not be described.

In the method for manufacturing a quantum dot having an alloy structure, indium, phosphorus, zinc, gallium, tin, cadmium, selenium, mercury, sulfur, mercury, polonium and tellurium can be used as the metal component.

Further, an unsaturated fatty acid may be further added. Examples of the unsaturated fatty acid include myristic acid, oleic acid, stearic acid, lauric acid, palmitic acid, elaidic acid, Eicosanoic acid, heneicosanoic acid, tricosanoic acid,

tricosanoic acid, docosanoic acid, tetracosanoic acid, hexacosanoic acid, heptacosanoic acid, octacosanoic acid or cis-13- Cis-13-docosenoic acid may be used, but it can be used without limitation as long as it is an unsaturated fatty acid. Here, the use of myristic acid is preferred because the myristic acid allows the formation of a stabilized nucleus with an organic ligand having a long chain and achieves a desired growth rate of a relatively uniformly dispersed quantum dot in the visible region.

 In the present invention, the indium-containing compound as the indium precursor may be at least one of indium acetate and indium chloride, and the compound containing zinc may be zinc acetate or zinc stearate stearate. < / RTI > The phosphorus-containing compound may also be tris (trimethylsilyl) phosphine.

Further, the quantum dot according to the present invention can be provided as a quantum dot solution dispersed in hexane, toluene, hexene, chloroform, or a dispersion solvent comprising a combination of two or more thereof.

1 is a schematic diagram of a quantum dot manufacturing method according to the present invention.

The method of manufacturing a quantum dot according to the present invention includes the following steps as shown in FIG. First, a first step of synthesizing an alloy type quantum dot core, a second step of forming one or a plurality of shell layers on the manufactured quantum dot core, and finally a quantum dot of the core / shell layer structure manufactured through the second step are dispersed And a third step of separating from the minor reactant to obtain a final quantum dot. Here, the luminescence characteristics can be controlled by the combination of raw materials used for producing the quantum dot core into an alloy type.

In the first step, it is preferable to synthesize an alloy type quantum dot core by mixing at least one metal component and tris (trimethylsilyl) phosphine, heating the mixture at 110 to 300 DEG C, stirring for 15 minutes to 12 hours Do. In the second step, the ZnS shell layer is preferably formed by mixing zinc stearate and dithercanethiol on the surface of the quantum dot core in the first step, heating the mixture to a temperature of 150 to 300 ° C, and stirring for 15 minutes to 12 hours Do. Here, in the second step, a plurality of shell layers of at least two or more can be formed by carrying out in the same manner as in Embodiment 6 described later. Further, the composition constituting each layer in the plurality of shell layers may be formed by the same composition or different compositions and contents.

The quantum dot production method according to the present invention is not limited to the method of using a batch type reactor, which is a conventional synthesis method, or the method of using a continuous type reactor using a fluid flow, It is showing.

The conventional synthesis method is based on synthesis in solution in a solvent such as trioctylphosphine, amine (A-branch e) or octadecene. At this time, the number of moles of reaction is in the range of the basic number of mM to several tens of mM. Also, in order to remove the solvent and the like used in the reaction from the produced quantum dots, a solution such as various alcohols and the like is removed from the reaction solution several times. Such a low reaction mole number and the use of an additional solvent are disadvantageous in that the productivity of the QD nanoparticles is lowered and the production cost is increased.

However, the method of manufacturing a quantum dot according to the present invention eliminates the solvents used in the conventional reaction, does not require the use of an additional solvent, manufactures the quantum dot core as an alloy type, forms one or a plurality of shell layers, Quantum efficiency and thermal stability can be ensured.

Hereinafter, the constitution of the present invention and the effect thereof will be described in more detail through examples. However, this embodiment is intended to explain the present invention more specifically, and the scope of the present invention is not limited to these embodiments.

[ Example 1 ]

A flask equipped with a syringe, a condenser and a thermometer was charged with 0.23 g of indium acetate (Sigma Aldrich, 510270), 0.07 g of zinc acetate (Sigma Aldrich, 383317), Myristic acid M3128) were added and dissolved by stirring and heating at 180 占 폚. Then, 0.29 ml of tris (trimethylsilyl) phosphine (Sigma Aldrich, 333670) precursor was added to the flask reactor and heated at 270 ° C for 20 minutes to synthesize a core made of InZnP. If the reaction temperature is lower than 270 ° C in the above step, smaller particles can be obtained.

After the temperature of the flask reactor in which the InZnP core of Example 1 was synthesized was lowered to room temperature, 1 g of zinc stearate (Sigma Aldrich, 307564), dodecanethiol (Sigma Aldrich, 471364) Was added and heated at 270 占 폚 for 20 minutes to form a shell layer of ZnS on the surface of the InZnP core.

10 ml of hexane (Hexane, J.T. Baker, 9304-03) was added to the InZnP / ZnS formed through the above process and then dispersed by primary centrifugation at 5600 rpm for 5 minutes. The non-precipitated supernatant was stored separately, and 5 ml of hexane was added to the precipitate to disperse the supernatant, followed by secondary centrifugation at 5600 rpm for 5 minutes. The non-precipitated supernatant obtained by the second centrifugation was mixed with the supernatant obtained by the first centrifugation, and the precipitated minor reactant was removed. The supernatant obtained through the primary and secondary centrifugation was subjected to tertiary centrifugation at a rate of 5600 rpm for 5 minutes to remove the byproducts, and finally an InZnP / ZnS quantum dot was obtained. The particle size of the quantum dot in Example 1 was about 3 to 4 nm.

[ Example 2 ]

The composition for the core synthesis was prepared by mixing 0.23 g of indium acetate, 1 g of zinc stearate and 0.29 ml of tris (trimethylsilyl) phosphine precursor to synthesize a core made of InZnP.

The other steps were carried out in the same manner as in Example 1, whereby InZnP / ZnS quantum dots were obtained. The particle size of the quantum dot according to Example 2 was about 2 to 4.5 nm.

[ Example 3 ]

The composition for the core synthesis was as follows: 0.23 g of indium acetate, 0.25 g of gallium nitrate (Sigma Aldrich, 289892), 0.7 g of myristic acid, 0.29 g of tris (trimethylsilyl) phosphine precursor Ml were mixed to synthesize a core made of InGaP.

The other steps were carried out in the same manner as in Example 1, whereby InGaP / ZnS quantum dots were obtained. The particle size of the quantum dot according to Example 3 was about 3 to 5 nm.

[ Example 4 ]

A core composed of InGaZnP was synthesized by mixing 0.23 g of indium acetate, 1 g of zinc stearate, 0.25 g of gallium nitrate and 0.29 ml of tris (trimethylsilyl) phosphine precursor in the same manner as in Example 1, .

The other steps were carried out in the same manner as in Example 1, whereby InGaZnP / ZnS quantum dots were obtained. The particle size of the quantum dots through Example 4 was about 2 to 4 nm.

[ Example 5 ]

The temperature of the flask reactor in which the InZnP core was synthesized, which was prepared using the core forming method of Example 1, was lowered to room temperature, and then 1 g of zinc stearate, 0.39 ml of selenium solution and 0.16 g of dodecaneethiol were added, Lt; RTI ID = 0.0 > ZnSeS < / RTI > on the surface of the InZnP core.

Here, the selenium solution was prepared by dissolving 78.96 g of selenium powder (Selenium, Sigma Aldrich, 229865) in 500 ml of trioctylphosphine (Sigma Aldrich, 117854).

The other steps were carried out in the same manner as in Example 1, whereby InZnP / ZnSeS quantum dots were obtained. The particle size of the quantum dot according to Example 5 was about 2 to 4 nm.

[ Example 6 ]

0.5 g of zinc stearate and 0.39 ml of selenium solution were added and the mixture was heated to 270 캜 to obtain an InZnP core To form a skin layer made of ZnSe.

After the temperature of the flask reactor of InZnP / ZnSe formed above was lowered to room temperature, 0.5 g of zinc stearate and 0.16 g of dodecanethiol were added and heated at 270 ° C. to form a shell layer of ZnS on the surface of InZnP / ZnSe .

The other steps were carried out in the same manner as in Example 1, whereby InZnP / ZnSe / ZnS quantum dots were obtained. The particle size of the quantum dots in Example 6 was about 3 to 5 nm.

The above-mentioned Examples 5 and 6 are not limited to the method using the InZnP core of Example 1, but can be applied to InZnP, InGaP, and InGaZnP by the core forming methods of Examples 1 to 4, It is possible to modify and modify it. Further, since the quantum dot core according to the present invention is composed of a multi-component system, it can be synthesized by a ternary system or more as in the above example.

Further, a plurality of shell layers can be formed by repeatedly forming the shell layer in the same manner as in Example 6, and the composition of the shell layer is not limited to that of Embodiment 6. [

[ Experimental Example ]

Each of the protons obtained in Examples 1 to 6 was measured using a photoluminescence analyzer.

As shown in FIG. 2, the absorption spectrum of the InZnP / ZnS quantum dot prepared in Example 1 showed an absorption peak at 1S at a wavelength of 550 nm, and a red emission at a wavelength of 600 nm. The InZnP / ZnS quantum dot core composition ratio in Example 1 is In: Zn = 1 mol: 0.5 mol.

As shown in FIG. 3, the absorption spectrum of the InZnP / ZnS quantum dot prepared in Example 2 showed an absorption peak at 1 S at a wavelength of 500 nm, and a yellow emission at a wavelength of 580 nm. The InZnP / ZnS quantum dot core composition ratio in Example 2 is In: Zn = 1 mol: 1 mol.

As shown in FIG. 4, the absorption spectrum of the InGaP / ZnS quantum dots prepared in Example 3 showed an absorption peak at 1 S at a wavelength of 590 nm and a red emission at a wavelength of 620 nm.

As shown in FIG. 5, the absorption spectrum of the InGaZnP / ZnS quantum dot prepared in Example 4 showed an absorption peak at 1 S at a wavelength of 510 nm and a green emission at a wavelength of 540 nm.

As shown in FIG. 6, the absorption spectrum of the InZnP / ZnSeS quantum dots prepared in Example 5 showed 1S absorption peak at a wavelength of 525 nm and yellow emission at a wavelength of 560 nm.

As shown in FIG. 7, the absorption spectrum of the InZnP / ZnSe / ZnS quantum dots prepared in Example 6 showed a 1S absorption peak at a wavelength of 525 nm and a yellow emission at a wavelength of 560 nm.

Therefore, it was confirmed that the quantum dot according to the present invention exhibits luminescence at a wavelength of 500 to 750 nm.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art.

Claims (18)

delete delete delete delete A first step of synthesizing an alloy type quantum dot core;
A second step of forming at least one shell layer on the synthesized quantum dot core; And
The quantum dots of the core / shell layer structure formed in the second step are dispersed using a dispersing solvent without separation of the solvent used in the first and second steps, separated from the minor reactants by centrifugation, And a third step of obtaining a quantum dot. 6. The method of claim 5,
Wherein the first step comprises mixing at least one metal component and tris (trimethylsilyl) phosphine, and heating the mixture to a temperature of 110 to 300 ° C to synthesize an alloy type quantum dot core. The method according to claim 6,
Wherein the first step further comprises mixing an unsaturated fatty acid to synthesize an alloy type quantum dot core. 8. The method of claim 7,
Wherein the unsaturated fatty acid is at least one of myristic acid, oleic acid, stearic acid, lauric acid, palmitic acid, elaidic acid, eicosanoic acid, hexacosanoic acid and octacosanoic acid. 6. The method of claim 5,
Wherein the quantum dot core is an InZnP core produced using an indium salt, a zinc salt, an unsaturated fatty acid, and tris (trimethylsilyl) phosphine. 6. The method of claim 5,
Wherein the quantum dot core is an InZnP core produced by using an indium salt, a zinc salt, and a tris (trimethylsilyl) phosphine. 6. The method of claim 5,
Wherein the quantum dot core is an InGaP core manufactured using an indium salt, a gallium salt, an unsaturated fatty acid, and tris (trimethylsilyl) phosphine. 6. The method of claim 5,
Wherein the quantum dot core is an InGaZnP core manufactured using an indium salt, a gallium salt, a zinc salt, and a tris (trimethylsilyl) phosphine. 6. The method of claim 5,
Wherein the second step comprises mixing at least one zinc stearate with thiol in the surface of the quantum dot core and heating the mixture to a temperature of 150 to 300 ° C to form at least one ZnS shell layer. 14. The method of claim 13,
Wherein the second step further comprises mixing the selenium solution to form at least one ZnSeS shell layer. 6. The method of claim 5,
The second step is to form a ZnSe shell layer with zinc stearate and selenium solution and further add ZnSe / ZnS shell layer with zinc stearate and dodecane thiol to the surface of the ZnSe shell layer To form a quantum dot. 6. The method of claim 5,
Wherein the quantum dots of the final form are adjusted in size, absorption and emission wavelength band by controlling the molar ratio of the constituent components. 17. The quantum dot according to any one of claims 5 to 16, wherein the quantum dot is produced by a method of manufacturing a quantum dot. 18. The method of claim 17,
Wherein the quantum dot is composed of a core of a multicomponent alloy type structure and at least one shell layer and exhibits luminescence at a wavelength of 500 to 750 nm.

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