KR101384025B1 - Pre-treatment Solution for Plastic Plating and Plating Method Using the Same - Google Patents

Pre-treatment Solution for Plastic Plating and Plating Method Using the Same Download PDF

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KR101384025B1
KR101384025B1 KR1020120017470A KR20120017470A KR101384025B1 KR 101384025 B1 KR101384025 B1 KR 101384025B1 KR 1020120017470 A KR1020120017470 A KR 1020120017470A KR 20120017470 A KR20120017470 A KR 20120017470A KR 101384025 B1 KR101384025 B1 KR 101384025B1
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정현영
오세영
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주식회사 에이스테크놀로지
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/04Pretreatment of the material to be coated
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/08Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76871Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76874Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating

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Abstract

플라스틱 도금용 전처리액이 개시된다. 개시된 전처리액은 H2SO4, NH4HF2, HNO3 및 H2O로 이루어지며, 총 중량에 대해 상기 H2SO4는 12중량%~36중량%, 상기 NH4HF2는 3중량%~7중량%, 상기 HNO3는 38중량%~48중량%, 상기 H2O는 34중량%~36중량%의 중량비를 가진다. 개시된 전처리액을 통해 플라스틱 도금 시 적절한 도금 밀착성을 확보할 수 있다. Disclosed is a pretreatment liquid for plastic plating. The disclosed pretreatment solution consists of H 2 SO 4 , NH 4 HF 2 , HNO 3 and H 2 O, the total weight of the H 2 SO 4 12% to 36% by weight, the NH 4 HF 2 is 3 weight % To 7% by weight, the HNO 3 is 38% by weight to 48% by weight, the H 2 O has a weight ratio of 34% to 36% by weight. Through the disclosed pretreatment liquid it is possible to ensure appropriate plating adhesion during plastic plating.

Description

플라스틱 도금용 전처리액 및 이를 이용한 플라스틱 도금 방법{Pre-treatment Solution for Plastic Plating and Plating Method Using the Same}Pretreatment solution for plastic plating and plastic plating method using the same {Pre-treatment Solution for Plastic Plating and Plating Method Using the Same}

본 발명의 실시예들은 도금용 전처리액 및 이를 이용한 도금 방법에 관한 것이다.Embodiments of the present invention relate to a plating pretreatment solution and a plating method using the same.

플라스틱은 무게가 가볍고 가공성이 뛰어나서 기존에 사용해 왔던 금속과 목재를 대체하여 광범위하게 사용되고 있다. 특히, 플라스틱은 전기가 통하지 않는 비전도성 재질로서 기존에 목재를 사용하던 많은 제품들이 플라스틱으로 대체되었다. Plastics are widely used in place of metals and woods that have been used because of their light weight and excellent processability. In particular, plastic is a non-conductive non-conductive material, and many products that used wood have been replaced by plastic.

그러나, 플라스틱은 비전도성 재질이기에 기존에 사용되던 금속을 대체하기는 어려운 문제점이 있었다. 필터, 도파관과 같은 RF 장비는 알루미늄과 같은 금속 재질로 베이스 구조물이 형성되고 형성된 베이스 구조물에 손실 감소를 위해 은과 같은 전도성이 뛰어난 재질로 구조물의 표면에 도금 처리가 이루어진다. However, since plastic is a non-conductive material, it is difficult to replace a metal used in the past. RF equipment such as filters and waveguides are formed of a metal material such as aluminum, and the base structure is formed, and a conductive material such as silver is plated on the surface of the structure to reduce loss in the formed base structure.

필터나 도파관과 같은 RF 장비는 금속 재질로 베이스 구조물이 형성되기에 그 무게가 상당히 무거운 단점이 있으며 특히 필터는 고지대에 설치되는 기지국 장비에 주로 설치되기에 경량의 필터가 절실하게 요구되고 있다. RF equipment such as filters and waveguides have a disadvantage that the weight is considerably heavy because the base structure is formed of metal, and in particular, the filter is mainly installed in the base station equipment installed in the highlands, and thus, a lightweight filter is urgently needed.

요구되는 경량화를 위해 플라스틱 재질로 베이스 구조물로 형성하는 RF 장비가 연구되었으나, RF 장비는 손실 감소를 위해 전도성이 좋은 은과 같은 재질로 도금이 이루어져야 하는데 플라스틱의 특성상 도금이 이루어지기 어려운 문제점이 있었다. RF equipment to form a base structure made of plastic material was studied for the required weight reduction, but RF equipment has to be plated with a material such as silver having good conductivity in order to reduce loss.

특히, 플라스틱 도금 시 가장 문제가 되는 것은 도금 밀착성이며, 도금 밀착성을 향상시키는 방법이 요구되고 있다.In particular, the most problematic problem in plastic plating is plating adhesion, and there is a demand for a method of improving plating adhesion.

본 발명에서는 도금 밀착성을 향상시킬 수 있는 플라스틱 도금의 전처리액 및 이를 이용한 플라스틱 도금 방법을 제안한다.The present invention proposes a pretreatment liquid for plastic plating and a plastic plating method using the same, which can improve plating adhesion.

상기한 목적을 달성하기 위해 본 발명의 바람직한 일 실시예에 따르면, 플라스틱 도금용 전처리액으로서, H2SO4, NH4HF2, HNO3 및 H2O로 이루어지는 플라스틱 도금용 전처리액이 제공된다. According to a preferred embodiment of the present invention to achieve the above object, as a pre-treatment solution for plastic plating, a pre-treatment solution for plastic plating consisting of H 2 SO 4 , NH 4 HF 2 , HNO 3 and H 2 O is provided. .

총 중량에 대해 상기 H2SO4는 12중량%~36중량%, 상기 NH4HF2는 3중량%~7중량%, 상기 HNO3는 38중량%~48중량%, 상기 H2O는 34중량%~36중량%의 중량비를 가진다The total weight of the H 2 SO 4 is 12% to 36% by weight, the NH 4 HF 2 is 3% to 7% by weight, the HNO 3 is 38% to 48% by weight, the H 2 O is 34 Have a weight ratio of 30% by weight to 36% by weight

본 발명의 다른 측면에 따르면, H2SO4, NH4HF2, HNO3 및 H2O로 이루어진 전처리액을 이용하여 플라스틱 피도금 소재를 에칭하는 단계(a); 상기 플라스틱 피도금 소재에 금속도금을 수행하는 단계(b)를 포함하는 것을 특징으로 하는 플라스틱 도금 방법이 제공된다.According to another aspect of the invention, the step of etching the plastic plated material using a pretreatment liquid consisting of H 2 SO 4 , NH 4 HF 2 , HNO 3 and H 2 O (a); Provided is a plastic plating method comprising the step (b) of performing metal plating on the plastic to-be-plated material.

본 발명에 의하면, 플라스틱 도금 시 도금 밀착성을 확보하여 적절한 플라스틱 도금이 이루어질 수 있는 장점이 있다.According to the present invention, there is an advantage that the appropriate plastic plating can be made by securing the plating adhesion during plastic plating.

도 1은 본 발명의 일 실시예에 따른 플라스틱 도금 방법의 전체적인 흐름을 도시한 순서도.
도 2는 조도가 2.3 미만인 경우의 도금 상태를 도시한 도면.
도 3은 조도가 2.5를 초과하는 경우의 도금 상태를 도시한 도면.
도 4는 조도가 2.4인 경우의 도금 상태를 도시한 도면.
1 is a flow chart showing the overall flow of the plastic plating method according to an embodiment of the present invention.
2 is a diagram illustrating a plating state when the illuminance is less than 2.3.
3 is a diagram showing a plating state when the illuminance exceeds 2.5;
4 is a diagram showing a plating state when the illuminance is 2.4.

본 발명은 다양한 변경을 가할 수 있고 여러 가지 실시예를 가질 수 있는 바, 특정 실시예들을 도면에 예시하고 상세한 설명에 상세하게 설명하고자 한다. 그러나, 이는 본 발명을 특정한 실시 형태에 대해 한정하려는 것이 아니며, 본 발명의 사상 및 기술 범위에 포함되는 모든 변경, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다. 각 도면을 설명하면서 유사한 참조부호를 유사한 구성요소에 대해 사용하였다. While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing.

이하에서, 본 발명에 따른 실시예들을 첨부된 도면을 참조하여 상세하게 설명한다. Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

본 발명에서는 플라스틱에 대한 도금 시 도금 밀착성을 향상시키기 위해 도금 전 전처리 단계를 수행하며, 도금 밀착성 향상을 위한 전처리액을 제안한다. In the present invention, a pretreatment step is performed before plating to improve plating adhesion when plating on plastics, and a pretreatment solution for improving plating adhesion is proposed.

본 발명은 피도금 소재인 플라스틱을 본 발명에서 제안하는 전처리액에 에칭시켜 피도금 소재에 대한 도금 밀착성을 향상시키도록 한다. The present invention is to improve the plating adhesion to the material to be plated by etching the plastic material to be plated in the pretreatment solution proposed in the present invention.

본 발명의 일 실시예에 따른 전처리액은 H2SO4, NH4HF2, HNO3 및 H2O를 포함한다. 본 발명의 바람직한 실시예에 따르면, 전처리액은 12중량%~36중량%의 H2SO4, 3중량%~7중량%의 NH4HF2, 38중량%~48중량%의 HNO3 및 34중량%~36중량%의 H2O를 포함한다. Pretreatment liquid according to an embodiment of the present invention includes H 2 SO 4 , NH 4 HF 2 , HNO 3 and H 2 O. According to a preferred embodiment of the present invention, the pretreatment liquid is 12% to 36% by weight of H 2 SO 4 , 3% to 7% by weight of NH 4 HF 2 , 38% to 48% by weight of HNO 3 and 34 % By weight to 36% by weight of H 2 O.

가장 바람직하게는 H2SO4 14중량%, NH4HF2 4중량%, HNO3 47중량%, H2O 35중량%를 포함하는 전처리액이 사용된다.Most preferably a pretreatment liquid comprising 14% by weight of H 2 SO 4 , 4 % by weight of NH 4 HF 2 , 47% by weight of HNO 3 , and 35% by weight of H 2 O is used.

본 발명의 전처리액은 도금 시 적절한 도금 밀착성을 확보하고 도금핵 생성을 위한 것으로서, 도금 시 조도가 2.3 내지 2.5사이의 값이 되도록 한다. The pretreatment solution of the present invention is to ensure proper plating adhesion during plating and to generate plating nuclei, so that the roughness during plating is a value between 2.3 and 2.5.

조도가 2.3 이하일 경우 도금 밀착성이 확보되지 않아 적절한 도금층이 확보되지 않으며 조도가 2.5 이상일 경우 적절한 도금핵 생성이 이루어지지 않아 도금 불량이 발생한다. If the roughness is 2.3 or less, the plating adhesion is not secured, so an appropriate plating layer is not secured. If the roughness is 2.5 or more, plating plating is not generated due to proper plating nucleation.

도 2는 조도가 2.3 미만인 경우의 도금 상태를 도시한 도면이다. 2 is a diagram illustrating a plating state when the illuminance is less than 2.3.

도 2와 같이 조도가 2.3 미만일 경우 도금 밀착성이 확보되지 않으며 도금 성장이 이루어지지 않고 금속이 피도금 소재인 플라스틱에 밀착되지 않아 도금 불량이 발생한다. When the roughness is less than 2.3 as shown in Figure 2, the plating adhesion is not secured, the plating growth is not made and the metal is not in close contact with the plastic material to be plated, plating failure occurs.

도 3은 조도가 2.5를 초과하는 경우의 도금 상태를 도시한 도면이다. 3 is a diagram illustrating a plating state when the illuminance exceeds 2.5.

도 3과 같이 조도가 2.5를 초과할 경우 적절한 도금핵이 형성되지 않아 과도한 도금으로 인한 도금 불량이 발생하게 된다. When roughness exceeds 2.5, as shown in FIG. 3, an appropriate plating nucleus is not formed, thereby causing plating failure due to excessive plating.

도 4는 조도가 2.4인 경우의 도금 상태를 도시한 도면이다. 4 is a diagram illustrating a plating state when the illuminance is 2.4.

도 4와 같이 조도가 2.4인 경우 적절한 도금 밀착성이 확보되어 적절한 도금층이 형성된다. When the roughness is 2.4 as shown in FIG. 4, proper plating adhesion is secured to form an appropriate plating layer.

다음의 표 1은 본 발명의 전처리액에서 H2SO4의 중량비를 변화시켰을 경우의 조도의 변화를 나타낸 표이다.Table 1 below is a table showing the change in the roughness when the weight ratio of H 2 SO 4 in the pretreatment solution of the present invention.

H2SO4 H 2 SO 4 조도Illuminance 12중량%12 wt% 2.42.4 24중량%24 wt% 2.32.3 36중량%36% by weight 2.462.46 6중량%6% by weight 1.031.03 9중량%9 wt% 1.31.3 60중량%60% by weight 4.24.2

위의 표 1로부터 확인되듯이, H2SO4의 중량비가 12중량% 내지 36중량%일 때 적절한 조도가 확보되며 6중량% 및 50중량%에서는 적절한 조도가 확보되지 않는다. As can be seen from Table 1 above, when the weight ratio of H 2 SO 4 is 12% by weight to 36% by weight, the appropriate roughness is secured, and at 6% by weight and 50% by weight, the appropriate roughness is not secured.

다음의 표 2는 본 발명의 전처리액에서 NH4HF2의 중량비를 변화시켰을 경우의 조도의 변화를 나타낸 표이다.Table 2 below is a table showing the change in the roughness when the weight ratio of NH 4 HF 2 in the pretreatment solution of the present invention.

NH4HF2 NH 4 HF 2 조도Illuminance 3중량%3 wt% 2.332.33 5중량%5 wt% 2.482.48 7중량%7 wt% 2.42.4 9중량%9 wt% 1.91.9 12중량%12 wt% 1.831.83

위의 표 2로부터 확인되듯이, NH4HF2의 중량비가 3중량% 내지 7중량%일 경우 적절한 조도가 확보되나 중량비가 9중량% 이상일 경우에는 적절한 조도가 확보되지 않는다. As can be seen from Table 2 above, when the weight ratio of NH 4 HF 2 is 3% by weight to 7% by weight, appropriate roughness is secured, but when the weight ratio is 9% by weight or more, appropriate roughness is not secured.

다음의 표 3은 본 발명의 전처리액에서 HNO3의 중량비를 변화시켰을 경우의 조도의 변화를 나타낸 표이다.Table 3 below is a table showing the change in the roughness when the weight ratio of HNO 3 in the pretreatment liquid of the present invention is changed.

HNO3 HNO 3 조도Illuminance 38중량%38% by weight 2.332.33 48중량%48 wt% 2.482.48 28중량%28 wt% 1.41.4

위의 표 3으로부터 확인되듯이, HNO3의 중량비가 38중량% 내지 48 중량%일 경우에는 적절한 조도가 확보되나 38중량% 이하의 중량비에서는 적절한 조도가 확보되지 않는다. As can be seen from Table 3 above, when the weight ratio of HNO 3 is 38% by weight to 48% by weight, the appropriate roughness is secured, but the appropriate roughness is not secured at the weight ratio of 38% by weight or less.

본 발명의 전처리액을 이용한 전처리 작업은 60도 내지 70도의 온도에서 이루어지는 것이 바람직하며, 30분 내지 45분의 시간동안 이루어지는 것이 바람직하다. The pretreatment operation using the pretreatment liquid of the present invention is preferably performed at a temperature of 60 degrees to 70 degrees, preferably for a time of 30 minutes to 45 minutes.

도 1은 본 발명의 일 실시예에 따른 플라스틱 도금 방법의 전체적인 흐름을 도시한 순서도이다. 1 is a flow chart showing the overall flow of the plastic plating method according to an embodiment of the present invention.

도 1을 참조하면, 우선 피도금 소재에 대한 세척 작업이 이루어진다(단계 100). 여기서 피도금 소재는 플라스틱 재질이며, 일례로 플라스틱 재질로 베이스 구조가 형성된 RF 장비일 수 있다. Referring to FIG. 1, first, a cleaning operation is performed on a material to be plated (step 100). Here, the material to be plated is a plastic material, and for example, may be an RF device having a base structure formed of a plastic material.

세척 작업이 완료되면, 도금 밀착성 향상을 위한 전처리 작업이 이루어진다(단계 102). When the cleaning operation is completed, a pretreatment operation is performed to improve plating adhesion (step 102).

전처리 작업은 상술한 바와 같이 바람직하게는 14중량%의 H2SO4, 4중량%의 NH4HF2, 47중량%의 HNO3, 35중량%의 H2O로 이루어진 전처리액에 피도금 소재를 에칭하는 방식으로 이루어질 수 있다. The pretreatment operation is preferably carried out with the material to be plated in a pretreatment liquid consisting of 14 wt% H 2 SO 4 , 4 wt% NH 4 HF 2 , 47 wt% HNO 3 , and 35 wt% H 2 O. It can be made by etching.

피도금 소재에 대한 전처리가 완료되면 주석 제거 작업을 수행한다(단계 104). 주석 제거 작업은 상온에서 약 2분간 이루어질 수 있다. When the pretreatment for the material to be plated is completed, annotation is performed (step 104). Tin removal can take place at room temperature for about 2 minutes.

주석 제거 작업이 완료되면, 무전해 동도금 작업을 수행한다(단계 106). 무전해 동도금은 약 70도의 온도에서 20분간 이루어질 수 있으며, 무전해 동금층은 하지 도금층으로 작용한다. Once the annotation removal is complete, electroless copper plating is performed (step 106). The electroless copper plating may be performed for 20 minutes at a temperature of about 70 degrees, and the electroless copper plating layer serves as a base plating layer.

무전해 동도금이 완료되면, 후에 수행되는 피로인산 동도금의 도금 밀착성을 향상시키기 위해 청화동 스트라이크 작업을 수행한다(단계 108). When the electroless copper plating is completed, a cyanide copper strike operation is performed to improve the plating adhesion of the pyrophosphate copper plating performed later (step 108).

청화동 스트라이크 작업이 완료되면 피로인산 동도금을 수행하며(단계 110), 피로인산 동도금은 전기 도금 과정이며 피로인산동을 이용하여 PH 8.0 내지 9.5의 환경에서 이루어질 수 있다. 피로인산 동도금은 전도성 확보를 위한 본 도금이다. When the cyanide copper strike is completed, copper pyrophosphate is performed (step 110), and pyrophosphate copper plating is an electroplating process, and may be made in an environment of PH 8.0 to 9.5 using copper pyrophosphate. Pyrophosphate copper plating is main plating to secure conductivity.

피로인산 동도금이 완료되면, 은 스트라이크 도금 작업이 수행된다(단계 112). 은 스트라이크 도금은 후에 수행되는 은도금의 도금 밀착성을 향상시키기 위한 것이며 상온에서 약 20초 내지 30초간 이루어질 수 있다. When pyrophosphate copper plating is completed, a silver strike plating operation is performed (step 112). The silver strike plating is to improve the plating adhesion of the silver plating to be performed later and may be performed at room temperature for about 20 seconds to 30 seconds.

은 스트라이크 도금이 완료되면, 본 도금인 은 도금을 수행한다(단계 114). 은도금은 전기도금으로서, 일레로, 은도금은 0.5V의 전압으로 PH 11~12에서 300초 내지 500초간 수행될 수 있다.When silver strike plating is completed, silver plating, which is the main plating, is performed (step 114). Silver plating is an electroplating, e.g., silver plating may be performed for 300 seconds to 500 seconds at PH 11-12 with a voltage of 0.5V.

상술한 실시예에서는 구리 도금 및 은도금으로 도금층을 형성하는 경우에 대해 설명하였으나, 도금층은 다양한 금속으로 이루어질 수도 있으며 단일 금속으로 이루어질 수도 있을 것이다. In the above-described embodiment, a case in which the plating layer is formed of copper plating and silver plating has been described, but the plating layer may be made of various metals or may be made of a single metal.

이상과 같이 본 발명에서는 구체적인 구성 요소 등과 같은 특정 사항들과 한정된 실시예 및 도면에 의해 설명되었으나 이는 본 발명의 보다 전반적인 이해를 돕기 위해서 제공된 것일 뿐, 본 발명은 상기의 실시예에 한정되는 것은 아니며, 본 발명이 속하는 분야에서 통상적인 지식을 가진 자라면 이러한 기재로부터 다양한 수정 및 변형이 가능하다. 따라서, 본 발명의 사상은 설명된 실시예에 국한되어 정해져서는 아니되며, 후술하는 특허청구범위뿐 아니라 이 특허청구범위와 균등하거나 등가적 변형이 있는 모든 것들은 본 발명 사상의 범주에 속한다고 할 것이다.As described above, the present invention has been described with reference to particular embodiments, such as specific elements, and specific embodiments and drawings. However, it should be understood that the present invention is not limited to the above- And various modifications and changes may be made thereto by those skilled in the art to which the present invention pertains. Accordingly, the spirit of the present invention should not be construed as being limited to the embodiments described, and all of the equivalents or equivalents of the claims, as well as the following claims, belong to the scope of the present invention .

Claims (7)

플라스틱 도금용 전처리액으로서,
H2SO4, NH4HF2, HNO3 및 H2O로 이루어지고, 총 중량에 대해 상기 H2SO4는 12중량%~24중량%, 상기 NH4HF2는 3중량%~7중량%, 상기 HNO3는 38중량%~48중량%, 상기 H2O는 34중량%~36중량%의 중량비를 가지는 것을 특징으로 하는 플라스틱 도금용 전처리액.
As pretreatment liquid for plastic plating,
It consists of H 2 SO 4 , NH 4 HF 2 , HNO 3 and H 2 O, the total weight of the H 2 SO 4 12% to 24% by weight, the NH 4 HF 2 3% to 7% by weight %, The HNO 3 is 38% by weight to 48% by weight, the H 2 O is pre-treated for plastic plating, characterized in that it has a weight ratio of 34% by weight to 36% by weight.
삭제delete H2SO4, NH4HF2, HNO3 및 H2O로 이루어진 전처리액을 이용하여 플라스틱 피도금 소재를 에칭하는 단계(a);
상기 플라스틱 피도금 소재에 금속도금을 수행하는 단계(b)를 포함하되,
총 중량에 대해 상기 H2SO4는 12중량%~24중량%, 상기 NH4HF2는 3중량%~7중량%, 상기 HNO3는 38중량%~48중량%, 상기 H2O는 34중량%~36중량%의 중량비를 가지는 것을 특징으로 하는 플라스틱 도금 방법.
Etching (a) the plastic plated material using a pretreatment liquid consisting of H 2 SO 4 , NH 4 HF 2 , HNO 3 and H 2 O;
(B) performing metal plating on the plastic plated material,
12 wt% to 24 wt% of the H 2 SO 4 , 3 wt% to 7 wt% of the NH 4 HF 2 , 38 wt% to 48 wt% of the HNO 3 , and 34 wt% of the H 2 O Plastic plating method characterized by having a weight ratio of weight% to 36% by weight.
삭제delete 제3항에 있어서,
상기 금속 도금 전 하지 도금을 수행하는 단계를 더 포함하는 것을 특징으로 하는 플라스틱 도금 방법.
The method of claim 3,
Plastic plating method further comprising the step of performing the base plating before the metal plating.
제3항에 있어서,
상기 금속 도금은 구리 도금 및 은도금인 것을 특징으로 하는 플라스틱 도금 방법.
The method of claim 3,
The metal plating is a plastic plating method, characterized in that the copper plating and silver plating.
제5항에 있어서,
상기 하지 도금은 무전해 구리 도금인 것을 특징으로 하는 플라스틱 도금 방법.
6. The method of claim 5,
The base plating is a plastic plating method, characterized in that the electroless copper plating.
KR1020120017470A 2012-02-21 2012-02-21 Pre-treatment Solution for Plastic Plating and Plating Method Using the Same KR101384025B1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110016724A (en) * 2009-08-12 2011-02-18 동우 화인켐 주식회사 Etching solution composition for formation of metal line
KR20110090726A (en) * 2010-02-04 2011-08-10 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. Pretreatment solution for non-electrolytic plating

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110016724A (en) * 2009-08-12 2011-02-18 동우 화인켐 주식회사 Etching solution composition for formation of metal line
KR20110090726A (en) * 2010-02-04 2011-08-10 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. Pretreatment solution for non-electrolytic plating

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