KR101380767B1 - Cvd reactor for producing polysilicon - Google Patents

Abstract

The present invention relates to a chemical vapor deposition reactor for producing polysilicon, the chemical vapor deposition reactor for producing polysilicon according to the present invention is a base formed with a silane reaction gas supply pipe and the discharge pipe; and the base to form a hot zone between the base Chemical vapor deposition reactor for polysilicon production comprising a bezel; and, the electrode is installed on the base to apply power to the slim rod side disposed in the hot zone, and a fixed chuck made of a conductive material connecting the slim rod and the electrode; In the fixing chuck is a plurality of fixing members integrally formed along the upper edge of the fixing chuck so that the insertion hole is inserted into the lower end of the slim rod is formed in the center to support the lower side of the slim rod, the plurality of fixing members Spaced spaces are provided between each, wherein the spaced spaces are deposited It is filled with the silicon by the silicon deposition reaction after the start and the plurality of holding members being integrated with the slender rod.

Description

Chemical Vapor Deposition Reactor for Polysilicon Production {CVD REACTOR FOR PRODUCING POLYSILICON}

The present invention relates to a chemical vapor deposition reactor for producing polysilicon, and more particularly, to a chemical vapor deposition reactor for producing polysilicon that can prevent the slim rod installed inside the reactor from being randomly separated from the fixed chuck during the silicon precipitation process. .

Since polysilicon is used as a raw material in the manufacture of semiconductors or solar cells, the demand for high-purity polysilicon of 99.9999999% to 99.999999999% suitable as a raw material for semiconductors or solar cells is increasing, which is a comprehensive development of the electronics industry. Occupies an important part.

The process for producing the polysilicon will be briefly described. First, metal silicon is obtained by melting silica or silica (SiO2) as a raw material in an electric furnace and reducing it using carbon. However, the purity of the metal silicon coming out at this time is about 98%, and includes various impurities such as Re, Al, Ca, Cr, Mn, B, and Cu, which is not suitable for use as a raw material of a semiconductor or a solar cell.

Accordingly, the metal silicon obtained through the reduction process is reacted with a reaction gas such as hydrogen chloride (HCl) to gasify with trichlorosilan (TCS) represented by chemical formula SiHCl3, and purify it through distillation to thereby purify the impurities. Will be removed. Then, the CVD reactor is used to precipitate silicon from the trichlorosilane from which the impurities are removed.

The present invention relates to a method of depositing silicon from a silane reaction gas such as trichlorosilane using a CVD reactor among the above processes, and generally, a Siemens method is used. The Siemens method generally includes a slim rod that goes to a bell-jar type reactor, electrically heats the slim rod through an electrode, and thermally decomposes by injecting trichlorosilane into the slim rod. It is a method of depositing silicon.

Of course, the shape of the reactor is not limited, the heating method of the slim rod may also use a high-temperature radiation or high frequency or electromagnetic wave heating method in addition to the electrical heating through the electrode, the reaction gas injected into the reactor is also limited to trichlorosilane It is also possible to use other gases such as monosilane, dichloride, tetrachloride and the like.

As shown in FIG. 1, the Siemens precipitation method relates to a method for producing rod-shaped polysilicon from silane gas using a Bell-Jar Reactor 10.

In more detail, first, a Si core filament (hereinafter, referred to as a 'slim rod') having a thin thickness of about 6 to 7 mm in the vertical reactor 10 is positioned in a wedge shape. The end of the slim rod 20 is connected to the electrode 30.

Preheating to 300 ° C. or higher using a heater lowers the specific resistance of the slim rod 20 to enable electrical resistance heating. Subsequently, electricity of a predetermined potential difference is supplied through the electrode 30 to heat the slim rod 20 to a high temperature, and a reaction gas composed of silane gas and hydrogen gas is supplied into the vertical reactor 10.

Accordingly, as Si precipitates on the surface of the slim rod 20, the thickness of the slim rod 20 gradually increases, and if the electrical resistance heating and silicon precipitation process is maintained for several days or more, the diameter is about 10 to 15 cm. It is possible to obtain a rod-shaped polysilicon product.

The slim rod 20 is connected to the electrode 30 through a fixed chuck.

The conventional fixed chuck 40 has a coupling hole 44 coupled to the electrode at the lower end as shown in FIG. 2, and an insertion hole 42 at which the lower end of the slim rod 20 is inserted and fixed at the upper end thereof. . This insertion hole 42 is formed to correspond to the cross-sectional shape of the slim rod 20 having a circular or square cross section, typically 6 to 10 mm in diameter. Therefore, when the diameter of the insertion hole 42 is outside the allowable tolerance range, since the fixing becomes unstable or the assembly itself is impossible, there is a problem in that the fixed chuck 40 disposed after one use must be precisely processed.

In addition, when the inner wall surface of the insertion hole 42 is processed to have a tapered shape, there is an advantage in that the range of tolerance for processing is enlarged, but the lower edge portion of the slim rod 20 is in the insertion hole 42. Since it is fixed in contact with the wall there is a problem that can not provide a firm fixing force.

In the state in which the slim rod 20 is unstablely coupled to the fixed chuck 40 as described above, the silicon is precipitated on the outer surface of the slim rod 20 to easily incline in one direction as its weight increases. As a result, there is a problem in that the lower end of the slim rod 20 is in contact with another slim rod 20 disposed adjacent to the fixed chuck 40.

Patent Document 1. Republic of Korea Patent Publication No. 10-1992-0000618

Accordingly, an object of the present invention is to solve such a conventional problem, to provide a chemical vapor deposition reactor for polysilicon production that can prevent the slim rod installed inside the reactor from detaching from the fixed chuck during the silicon precipitation process. have.

In addition, the present invention provides a chemical vapor deposition reactor for producing polysilicon capable of improving fixing force by allowing a plurality of fixing members divided by spaces to elastically support a slim rod.

In addition, the chemical vapor deposition for polysilicon production that prevents the slim rod from being separated from the fixed chuck by integrating the fixed chuck and the slim rod by allowing the separation space located at the connection portion between the fixed chuck and the slim rod to be filled with silicon by the silicon precipitation reaction. In providing a reactor.

The object is, according to the present invention, a base formed with a silane reaction gas supply pipe and the discharge pipe; and a bezel coupled to the base to form a hot zone between the base; and a slim rod installed in the base and disposed in the hot zone In the chemical vapor deposition reactor for producing polysilicon comprising a; electrode for applying power to the side, made of a conductive material connecting the slim rod and the electrode, the fixing chuck is the insertion hole is inserted into the lower end of the slim rod A plurality of fixing members integrally formed along the upper edge of the fixing chuck so as to be formed on the lower end of the slim rod, and spaced apart spaces provided between the plurality of fixing members, respectively, wherein the space is a deposition process. After the start, it is filled with silicon by the silicon precipitation reaction so that a plurality of fixing members are integrated with the slim rod. It is achieved by a chemical vapor deposition reactor for producing polysilicon.

delete

delete

Here, the side portion of the fixing member is preferably arranged in parallel with the side portion of the fixing member disposed adjacent.

In addition, the fixing member is preferably made of an inclined surface contact surface with the slim rod.

In addition, the fixing chuck is preferably made of one of graphite and tungsten.

According to the present invention, there is provided a chemical vapor deposition reactor for producing polysilicon which can prevent the slim rod installed inside the reactor from being randomly separated from the fixed chuck during the silicon precipitation process.

In addition, there is provided a chemical vapor deposition reactor for producing polysilicon which can improve the fixing force by allowing the plurality of fixing members divided by the separation space to elastically support the slim rod.

In addition, the separation space located at the connection part of the fixed chuck and the slim rod at the time of the precipitation reaction is filled with silicon by the silicon precipitation reaction, thereby integrating the fixed chuck and the slim rod to prevent the slim rod from being separated from the fixed chuck. A chemical vapor deposition reactor for producing polysilicon is provided.

1 is a schematic view showing an example of a conventional chemical vapor deposition reactor for producing polysilicon,
2 is a cross-sectional view of a fixed chuck of a conventional chemical vapor deposition reactor for producing polysilicon;
Figure 3 is a partial cutaway perspective view of the chemical vapor deposition reactor for producing a polysilicon of the present invention,
Figure 4 is an exploded perspective view of a fixed chuck of the chemical vapor deposition reactor for producing polysilicon of the present invention,
5 is a cross-sectional view of the chemical vapor deposition reactor for producing a polysilicon of the present invention,
FIG. 6 is an enlarged cross-sectional view of part “B” of FIG. 5;
7 is a cross-sectional view taken along the line CC 'of FIG.
8 is an exploded perspective view showing the action of the fixed chuck of the chemical vapor deposition reactor for producing polysilicon of the present invention.

Prior to the description, components having the same configuration are denoted by the same reference numerals as those in the first embodiment. In other embodiments, configurations different from those of the first embodiment will be described do.

Hereinafter, a chemical vapor deposition reactor for producing polysilicon according to a first embodiment of the present invention will be described in detail with reference to the accompanying drawings.

3 is a partial cutaway perspective view of the chemical vapor deposition reactor for producing polysilicon of the present invention, Figure 4 is an exploded perspective view of a fixed chuck of the chemical vapor deposition reactor for producing polysilicon of the present invention.

Chemical vapor deposition reactor for producing polysilicon of the present invention as shown in the drawings, the base 110, the bezel 120, the electrode 130, the fixed chuck 140 is configured.

The base 110 is made of a substantially circular plate, the silane reaction gas supply pipe 111 and the discharge pipe 112 is formed on the plate surface. The bezel 120 is formed in a bell-jar type, and the lower edge is coupled to the edge of the base 110 to form a hot zone with the base 110. The electrode 130 is provided in plural to penetrate the base 110 at a position spaced apart from the supply pipe 111 and the discharge pipe 112 of the base 110 to apply power to the side of the slim rod 150 disposed in the hot zone. . Since the base 110, the bezel 120, and the electrode 130 are the same as those of the general reactor, a detailed description thereof will be omitted.

The fixing chuck 140 is formed of a pillar-shaped body of a conductive material having durability and inertness at high temperatures such as tungsten or graphite, and a lower end is connected to an electrode 130 installed in the base 110, and an upper end is slim. At the same time as fixing the end of the rod 150, the power applied from the electrode 130 is transferred to the slim rod 150 side.

More specifically, the upper end of the columnar body of the fixing chuck 140 is inserted into the end of the insertion hole 142 and the insertion hole 142, the side of the slim rod 150 is inserted into the end A plurality of fixing members 143 for pressing and supporting the first and the first coupling portion 141 provided with a separation space 144 provided between the plurality of fixing members 143, respectively, is formed, the lower end of the columnar body The second coupling part 146 is formed in the electrode 110 exposed to the upper side of the base 110.

In particular, in order to fill the space 144 of the fixed chuck 140 with silicon (S) by the silicon (S) precipitation reaction after the start of the precipitation process, the space 144 is inserted into the insertion hole 142 They are disposed at positions orthogonal to the center and have a substantially crisscross shape, and side surfaces of the fixing member 143 which are in contact with both sides of the separation space 144 are arranged side by side.

In addition, the inner surface of the fixing member 143 in contact with the insertion hole 142 is made of an inclined surface so that the slim rod 150 can be easily inserted.

The operation of the first embodiment of the chemical vapor deposition reactor for producing polysilicon described above will now be described.

Figure 5 is a cross-sectional view of the chemical vapor deposition reactor for producing polysilicon of the present invention, Figure 6 is an enlarged cross-sectional view "part" "A" of Figure 5, Figure 7 is a cross-sectional view taken along line B-B 'of Figure 6, Excerpt perspective view showing the action of the fixed chuck of the chemical vapor deposition reactor for producing polysilicon of the present invention.

As shown in Figure 5, the bonding state and the silicon (S) precipitation action of the general chemical vapor deposition reactor for producing polysilicon is as follows.

First, the second coupling portion 146 of the fixed chuck 140 is coupled to the pair of electrodes 130 installed on the base 110, respectively, and then the slim rod is attached to the first coupling portion 141 of the fixed chuck 140. The end of the 150 is fixed so that the pair of electrodes 130 are connected by the slim rod 150.

Subsequently, the vertical bezel 120 is coupled to the upper side of the base 110 so that the space in which the slim rod 150 is disposed is closed by the bezel 120 and sealed, and a pair of both ends of the slim rod 150 connected to each other. When power is applied to the electrode 130, heat is generated by the electrical resistance of the slim rod 150.

When the slim rod 150 is heated to a temperature sufficient to cause the silicon (S) precipitation reaction, the silicon (S) component of the silane reaction gas supplied through the supply pipe 111 of the base 110 may be formed in the slim rod 150. Precipitated on the surface, the reaction gas that caused the precipitation reaction is discharged through the discharge pipe (112).

Here, referring to the fixed chuck 140 connecting the slim rod 150 and the electrode 130, the second coupling part 146 formed at the lower end of the fixed chuck 140 as shown in FIG. The lower end of the slim rod 150 is inserted into and fixed to the insertion hole 142 of the first coupling part 141 formed in the upper end of the fixing chuck 140 in a state of being coupled to the electrode 130 protruding upward.

In particular, since the plurality of fixing members 143 arranged circumferentially on the periphery of the insertion hole 142 are separated from each other by the spaced space 144, the inner surface of each fixing member 143 is slim. The lower end of the rod 150, the outer surface is elastically supported, thereby enabling to firmly secure the slim rod 150.

In addition, since the inner surface of each holding member 143 in contact with the outer surface of the slim rod 150 is made of an inclined surface, the opening side diameter of the insertion hole 142 is formed larger than the inner side, thereby the slim rod 150 Can be easily inserted and fixed.

As described above, the electrode 130 is coupled to the second coupling portion 146 of the fixed chuck 140 and the slim rod 150 is coupled to the first coupling portion 141, and the fixed chuck 140 is graphite. Since it is made of a material having excellent electrical conductivity as described above, the power supplied from the electrode 130 is applied to the slim rod 150.

The slim rod 150 resists heat generation to a temperature suitable for the precipitation reaction of silicon (S) by the application of a power supply, and at the time when the precipitation reaction starts, the contact portion between the slim rod 150 and the fixed chuck 140, that is, slim The temperature of the contact portion of the lower edge of the rod 150 and the inner surface of the fixing member 143 is heated higher than the temperature of the slim rod 150.

Therefore, before the silicon (S) component is deposited on the outer surface of the slim rod 150 at the time when the silicon (S) precipitation reaction is started, the precipitation reaction is performed from the connection portion between the fixed chuck 140 and the slim rod 150. As a result, the space 144 around the insertion hole 142 of the fixing chuck 140 is filled with silicon (S) to integrate the fixing chuck 140 and the slim rod 150.

In addition, since the side portions of the pair of fixing members 143 disposed on both sides of the separation space 144 are arranged side by side with each other, the separation space 144 is the silicon (S) at the start of the silicon (S) precipitation reaction. As soon as it is filled in, the slim rod 150 is prevented from being randomly separated from the fixed chuck 140 in the process of the silicon (S) precipitation on the outer surface of the slim rod 150.

The scope of the present invention is not limited to the above-described embodiments, but may be embodied in various forms of embodiments within the scope of the appended claims. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims.

110: base, 111: supply pipe, 112: discharge pipe, 120: bezel, 130: electrode,
140: fixed chuck, 141: first coupling portion, 142: insertion hole, 143: fixing member,
144: separation space, 146: the second coupling portion, 150: slim rod, S: silicon

Claims (4)

A base formed with a silane reaction gas supply pipe and a discharge pipe; and a bezel coupled to the base to form a hot zone between the base; and a slim rod side disposed at a position spaced apart from the supply pipe and the discharge pipe on the base and disposed in the hot zone. In the chemical vapor deposition reactor for producing a polysilicon comprising: a fixed chuck made of a conductive material connecting the electrode and the electrode for applying power to the slim rod;
The fixed chuck is made of a columnar body,
An insertion hole into which the end of the slim rod is inserted is inserted into the upper end of the body, a plurality of fixing members integrally formed along the edge of the body around the insertion hole to pressurize and support the lower side of the slim rod, and the plurality of fixing members. A first coupling part composed of a spaced space provided between each is formed,
The lower end of the body is formed with a second coupling portion for coupling to the electrode exposed to the upper side of the base,
The separation space is filled with silicon by the silicon precipitation reaction after the deposition process is initiated chemical vapor deposition reactor for producing a polysilicon, characterized in that the plurality of fixing members are integrated with the slim rod. The method according to claim 1,
The chemical vapor deposition reactor for producing polysilicon, characterized in that the side portion of the fixing member is disposed in parallel with the side portion of the fixing member disposed adjacent. 3. The method of claim 2,
The fixing member is a chemical vapor deposition reactor for producing polysilicon, characterized in that the contact surface with the slim rod made of an inclined surface. 3. The method of claim 2,
The fixed chuck is a chemical vapor deposition reactor for producing polysilicon, characterized in that made of any one material of graphite, tungsten.

Images