KR101319634B1 - 포토마스크용 기판, 포토마스크, 포토마스크의 제조 방법 및 패턴 전사 방법 - Google Patents

포토마스크용 기판, 포토마스크, 포토마스크의 제조 방법 및 패턴 전사 방법 Download PDF

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KR101319634B1
KR101319634B1 KR1020120037850A KR20120037850A KR101319634B1 KR 101319634 B1 KR101319634 B1 KR 101319634B1 KR 1020120037850 A KR1020120037850 A KR 1020120037850A KR 20120037850 A KR20120037850 A KR 20120037850A KR 101319634 B1 KR101319634 B1 KR 101319634B1
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KR
South Korea
Prior art keywords
photomask
pattern
main surface
transfer
substrate
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KR1020120037850A
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English (en)
Korean (ko)
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KR20120116877A (ko
Inventor
마사요시 쯔찌야
히사미 이께베
Original Assignee
호야 가부시키가이샤
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Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20120116877A publication Critical patent/KR20120116877A/ko
Application granted granted Critical
Publication of KR101319634B1 publication Critical patent/KR101319634B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
KR1020120037850A 2011-04-13 2012-04-12 포토마스크용 기판, 포토마스크, 포토마스크의 제조 방법 및 패턴 전사 방법 KR101319634B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-088782 2011-04-13
JP2011088782 2011-04-13

Publications (2)

Publication Number Publication Date
KR20120116877A KR20120116877A (ko) 2012-10-23
KR101319634B1 true KR101319634B1 (ko) 2013-10-17

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KR1020120037850A KR101319634B1 (ko) 2011-04-13 2012-04-12 포토마스크용 기판, 포토마스크, 포토마스크의 제조 방법 및 패턴 전사 방법

Country Status (4)

Country Link
JP (1) JP5937409B2 (ja)
KR (1) KR101319634B1 (ja)
CN (1) CN102736402B (ja)
TW (1) TWI456269B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5970021B2 (ja) * 2013-08-20 2016-08-17 Hoya株式会社 フォトマスクの製造方法、描画装置、フォトマスクの検査方法、フォトマスクの検査装置、及び表示装置の製造方法
WO2018020994A1 (ja) * 2016-07-27 2018-02-01 Hoya株式会社 マスクブランク用基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、半導体デバイスの製造方法、マスクブランク用基板、マスクブランク及び転写用マスク

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050012687A (ko) * 2003-07-25 2005-02-02 신에쓰 가가꾸 고교 가부시끼가이샤 포토마스크 블랭크용 기판의 선정방법
JP2010078769A (ja) 2008-09-25 2010-04-08 Shin-Etsu Chemical Co Ltd フォトマスクブランクスの選択方法及び製造方法並びにフォトマスクの製造方法
KR20100128260A (ko) * 2009-05-27 2010-12-07 주식회사 에스앤에스텍 블랭크 마스크 기판, 블랭크 마스크 및 그의 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3627805B2 (ja) * 2001-04-20 2005-03-09 信越化学工業株式会社 フォトマスク用ガラス基板及びその製造方法
TWI250133B (en) * 2002-01-31 2006-03-01 Shinetsu Chemical Co Large-sized substrate and method of producing the same
JP4267333B2 (ja) * 2002-01-31 2009-05-27 信越化学工業株式会社 大型合成石英ガラス基板の製造方法
TWI329779B (en) * 2003-07-25 2010-09-01 Shinetsu Chemical Co Photomask blank substrate, photomask blank and photomask
US7608542B2 (en) * 2005-06-17 2009-10-27 Shin-Etsu Chemical Co., Ltd. Large-size glass substrate for photomask and making method, computer-readable recording medium, and mother glass exposure method
JP4362732B2 (ja) * 2005-06-17 2009-11-11 信越化学工業株式会社 フォトマスク用大型ガラス基板及びその製造方法、コンピュータ読み取り可能な記録媒体、並びにマザーガラスの露光方法
JP2007054944A (ja) * 2005-07-25 2007-03-08 Hoya Corp マスクブランク用基板の製造方法、マスクブランクの製造方法及びマスクの製造方法
KR101503932B1 (ko) * 2005-09-30 2015-03-18 호야 가부시키가이샤 포토마스크 블랭크 및 그 제조 방법, 포토마스크의 제조방법과 반도체 장치의 제조 방법
JP5331638B2 (ja) * 2008-11-04 2013-10-30 Ｈｏｙａ株式会社 表示装置製造用フォトマスクの製造方法及び描画装置
WO2010061828A1 (ja) * 2008-11-26 2010-06-03 Hoya株式会社 マスクブランク用基板
JP5823339B2 (ja) * 2011-04-12 2015-11-25 Hoya株式会社 フォトマスク用基板、フォトマスク及びパターン転写方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050012687A (ko) * 2003-07-25 2005-02-02 신에쓰 가가꾸 고교 가부시끼가이샤 포토마스크 블랭크용 기판의 선정방법
JP2010078769A (ja) 2008-09-25 2010-04-08 Shin-Etsu Chemical Co Ltd フォトマスクブランクスの選択方法及び製造方法並びにフォトマスクの製造方法
KR20100128260A (ko) * 2009-05-27 2010-12-07 주식회사 에스앤에스텍 블랭크 마스크 기판, 블랭크 마스크 및 그의 제조 방법

Also Published As

Publication number Publication date
CN102736402B (zh) 2014-07-23
TWI456269B (zh) 2014-10-11
JP2012230369A (ja) 2012-11-22
CN102736402A (zh) 2012-10-17
KR20120116877A (ko) 2012-10-23
TW201245775A (en) 2012-11-16
JP5937409B2 (ja) 2016-06-22

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