KR101298166B1 - 전원 장치 - Google Patents

전원 장치 Download PDF

Info

Publication number
KR101298166B1
KR101298166B1 KR1020117002275A KR20117002275A KR101298166B1 KR 101298166 B1 KR101298166 B1 KR 101298166B1 KR 1020117002275 A KR1020117002275 A KR 1020117002275A KR 20117002275 A KR20117002275 A KR 20117002275A KR 101298166 B1 KR101298166 B1 KR 101298166B1
Authority
KR
South Korea
Prior art keywords
discharge circuit
potential
power supply
discharge
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020117002275A
Other languages
English (en)
Korean (ko)
Other versions
KR20110027819A (ko
Inventor
요시쿠니 호리시타
시노부 마츠바라
아쯔시 오노
Original Assignee
가부시키가이샤 알박
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 알박 filed Critical 가부시키가이샤 알박
Publication of KR20110027819A publication Critical patent/KR20110027819A/ko
Application granted granted Critical
Publication of KR101298166B1 publication Critical patent/KR101298166B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3464Sputtering using more than one target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3444Associated circuits
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of DC power input into DC power output
    • H02M3/02Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38Impedance-matching networks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Dc-Dc Converters (AREA)
KR1020117002275A 2008-06-30 2009-06-17 전원 장치 Active KR101298166B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008170807A JP5500794B2 (ja) 2008-06-30 2008-06-30 電源装置
JPJP-P-2008-170807 2008-06-30
PCT/JP2009/060989 WO2010001724A1 (ja) 2008-06-30 2009-06-17 電源装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020137013816A Division KR20130080055A (ko) 2008-06-30 2009-06-17 전원 장치

Publications (2)

Publication Number Publication Date
KR20110027819A KR20110027819A (ko) 2011-03-16
KR101298166B1 true KR101298166B1 (ko) 2013-08-21

Family

ID=41465825

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020117002275A Active KR101298166B1 (ko) 2008-06-30 2009-06-17 전원 장치
KR1020137013816A Ceased KR20130080055A (ko) 2008-06-30 2009-06-17 전원 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020137013816A Ceased KR20130080055A (ko) 2008-06-30 2009-06-17 전원 장치

Country Status (6)

Country Link
US (1) US20110120861A1 (enExample)
JP (1) JP5500794B2 (enExample)
KR (2) KR101298166B1 (enExample)
CN (1) CN102076878B (enExample)
TW (1) TW201006317A (enExample)
WO (1) WO2010001724A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9039871B2 (en) * 2007-11-16 2015-05-26 Advanced Energy Industries, Inc. Methods and apparatus for applying periodic voltage using direct current
DE102010031568B4 (de) 2010-07-20 2014-12-11 TRUMPF Hüttinger GmbH + Co. KG Arclöschanordnung und Verfahren zum Löschen von Arcs
KR101421483B1 (ko) * 2010-08-18 2014-07-22 가부시키가이샤 알박 직류 전원 장치
US9226380B2 (en) 2012-11-01 2015-12-29 Advanced Energy Industries, Inc. Adjustable non-dissipative voltage boosting snubber network
US9287098B2 (en) 2012-11-01 2016-03-15 Advanced Energy Industries, Inc. Charge removal from electrodes in unipolar sputtering system
US9129776B2 (en) * 2012-11-01 2015-09-08 Advanced Energy Industries, Inc. Differing boost voltages applied to two or more anodeless electrodes for plasma processing
JP2022080674A (ja) * 2020-11-18 2022-05-30 東京エレクトロン株式会社 プラズマ処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005133110A (ja) 2003-10-28 2005-05-26 Konica Minolta Opto Inc スパッタリング装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4233720C2 (de) * 1992-10-07 2001-05-17 Leybold Ag Einrichtung für die Verhinderung von Überschlägen in Vakuum-Zerstäubungsanlagen
DE4446532A1 (de) * 1994-12-24 1996-06-27 Bosch Gmbh Robert Stromversorgungsschaltung
JP3028292B2 (ja) * 1995-10-20 2000-04-04 株式会社ハイデン研究所 正負パルス式高電圧電源
DE19651811B4 (de) * 1996-12-13 2006-08-31 Unaxis Deutschland Holding Gmbh Vorrichtung zum Belegen eines Substrats mit dünnen Schichten
ATE506463T1 (de) * 1997-02-20 2011-05-15 Shibaura Mechatronics Corp Stromversorgungsvorrichtung zum sputtern und sputtervorrichtung, die diese verwendet
US7247221B2 (en) * 2002-05-17 2007-07-24 Applied Films Corporation System and apparatus for control of sputter deposition process
JP5016819B2 (ja) * 2006-01-11 2012-09-05 株式会社アルバック スパッタリング方法及びスパッタリング装置
JP4320019B2 (ja) * 2006-01-11 2009-08-26 株式会社アルバック スパッタリング装置
KR101447302B1 (ko) * 2006-12-12 2014-10-06 오를리콘 어드벤스드 테크놀로지스 아크티엔게젤샤프트 고전력 임펄스 마그네트론 스퍼터링(hipims)에서의 아크 억제 및 펄싱

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005133110A (ja) 2003-10-28 2005-05-26 Konica Minolta Opto Inc スパッタリング装置

Also Published As

Publication number Publication date
WO2010001724A1 (ja) 2010-01-07
KR20130080055A (ko) 2013-07-11
CN102076878A (zh) 2011-05-25
KR20110027819A (ko) 2011-03-16
US20110120861A1 (en) 2011-05-26
CN102076878B (zh) 2013-01-16
JP5500794B2 (ja) 2014-05-21
TW201006317A (en) 2010-02-01
JP2010007162A (ja) 2010-01-14

Similar Documents

Publication Publication Date Title
KR101298167B1 (ko) 전원 장치
KR101298166B1 (ko) 전원 장치
KR101190138B1 (ko) 바이폴라 펄스 전원 및 복수의 바이폴라 펄스 전원으로 구성된 전원 장치
KR101181875B1 (ko) 바이폴라 펄스 전원 및 이 바이폴라 펄스 전원을 복수대 병렬 접속하여 구성되는 전원 장치
US20110180390A1 (en) Redundant anode sputtering method
JP5322234B2 (ja) スパッタリング方法及びスパッタリング装置
KR20080020463A (ko) 기판의 플라즈마 처리장치 및 플라즈마 처리방법
JP3269834B2 (ja) スパッタリング装置とスパッタリング方法
WO2009145092A1 (ja) バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
JP2006100485A (ja) 高周波電力用分岐スイッチ及びエッチング装置
KR100200009B1 (ko) Ito 투명도전막의 제작방법
CN101542677B (zh) 用于基底预处理的装置
JP5322235B2 (ja) スパッタリング方法
US20130213798A1 (en) Magnetron sputtering device, method for controlling magnetron sputtering device, and film forming method
TWI401334B (zh) Sputtering apparatus and sputtering method
JP4889280B2 (ja) スパッタリング装置
KR20160058494A (ko) 기판 처리 장치

Legal Events

Date Code Title Description
A201 Request for examination
AMND Amendment
PA0105 International application

Patent event date: 20110128

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20110128

Comment text: Request for Examination of Application

PG1501 Laying open of application
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20121004

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20130429

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20121004

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

A107 Divisional application of patent
AMND Amendment
J201 Request for trial against refusal decision
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20130529

PJ0201 Trial against decision of rejection

Patent event date: 20130529

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20130429

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20130701

Appeal identifier: 2013101004040

Request date: 20130529

PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20130529

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20130529

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20130103

Patent event code: PB09011R02I

Comment text: Amendment to Specification, etc.

Patent event date: 20110128

Patent event code: PB09011R02I

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

Patent event date: 20130701

Comment text: Decision to Grant Registration

Patent event code: PB07012S01D

Patent event date: 20130629

Comment text: Transfer of Trial File for Re-examination before a Trial

Patent event code: PB07011S01I

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20130813

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20130814

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20160627

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20160627

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20170619

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20170619

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20180629

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20180629

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20190801

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20200731

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20210806

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20220804

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20240801

Start annual number: 12

End annual number: 12