KR101298166B1 - 전원 장치 - Google Patents
전원 장치 Download PDFInfo
- Publication number
- KR101298166B1 KR101298166B1 KR1020117002275A KR20117002275A KR101298166B1 KR 101298166 B1 KR101298166 B1 KR 101298166B1 KR 1020117002275 A KR1020117002275 A KR 1020117002275A KR 20117002275 A KR20117002275 A KR 20117002275A KR 101298166 B1 KR101298166 B1 KR 101298166B1
- Authority
- KR
- South Korea
- Prior art keywords
- discharge circuit
- potential
- power supply
- discharge
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 abstract description 43
- 239000010409 thin film Substances 0.000 abstract description 12
- 230000002159 abnormal effect Effects 0.000 abstract description 11
- 238000004544 sputter deposition Methods 0.000 description 17
- 238000010891 electric arc Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 230000010355 oscillation Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 240000006829 Ficus sundaica Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008170807A JP5500794B2 (ja) | 2008-06-30 | 2008-06-30 | 電源装置 |
| JPJP-P-2008-170807 | 2008-06-30 | ||
| PCT/JP2009/060989 WO2010001724A1 (ja) | 2008-06-30 | 2009-06-17 | 電源装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137013816A Division KR20130080055A (ko) | 2008-06-30 | 2009-06-17 | 전원 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20110027819A KR20110027819A (ko) | 2011-03-16 |
| KR101298166B1 true KR101298166B1 (ko) | 2013-08-21 |
Family
ID=41465825
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020117002275A Active KR101298166B1 (ko) | 2008-06-30 | 2009-06-17 | 전원 장치 |
| KR1020137013816A Ceased KR20130080055A (ko) | 2008-06-30 | 2009-06-17 | 전원 장치 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137013816A Ceased KR20130080055A (ko) | 2008-06-30 | 2009-06-17 | 전원 장치 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20110120861A1 (enExample) |
| JP (1) | JP5500794B2 (enExample) |
| KR (2) | KR101298166B1 (enExample) |
| CN (1) | CN102076878B (enExample) |
| TW (1) | TW201006317A (enExample) |
| WO (1) | WO2010001724A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9039871B2 (en) * | 2007-11-16 | 2015-05-26 | Advanced Energy Industries, Inc. | Methods and apparatus for applying periodic voltage using direct current |
| DE102010031568B4 (de) | 2010-07-20 | 2014-12-11 | TRUMPF Hüttinger GmbH + Co. KG | Arclöschanordnung und Verfahren zum Löschen von Arcs |
| KR101421483B1 (ko) * | 2010-08-18 | 2014-07-22 | 가부시키가이샤 알박 | 직류 전원 장치 |
| US9226380B2 (en) | 2012-11-01 | 2015-12-29 | Advanced Energy Industries, Inc. | Adjustable non-dissipative voltage boosting snubber network |
| US9287098B2 (en) | 2012-11-01 | 2016-03-15 | Advanced Energy Industries, Inc. | Charge removal from electrodes in unipolar sputtering system |
| US9129776B2 (en) * | 2012-11-01 | 2015-09-08 | Advanced Energy Industries, Inc. | Differing boost voltages applied to two or more anodeless electrodes for plasma processing |
| JP2022080674A (ja) * | 2020-11-18 | 2022-05-30 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005133110A (ja) | 2003-10-28 | 2005-05-26 | Konica Minolta Opto Inc | スパッタリング装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4233720C2 (de) * | 1992-10-07 | 2001-05-17 | Leybold Ag | Einrichtung für die Verhinderung von Überschlägen in Vakuum-Zerstäubungsanlagen |
| DE4446532A1 (de) * | 1994-12-24 | 1996-06-27 | Bosch Gmbh Robert | Stromversorgungsschaltung |
| JP3028292B2 (ja) * | 1995-10-20 | 2000-04-04 | 株式会社ハイデン研究所 | 正負パルス式高電圧電源 |
| DE19651811B4 (de) * | 1996-12-13 | 2006-08-31 | Unaxis Deutschland Holding Gmbh | Vorrichtung zum Belegen eines Substrats mit dünnen Schichten |
| ATE506463T1 (de) * | 1997-02-20 | 2011-05-15 | Shibaura Mechatronics Corp | Stromversorgungsvorrichtung zum sputtern und sputtervorrichtung, die diese verwendet |
| US7247221B2 (en) * | 2002-05-17 | 2007-07-24 | Applied Films Corporation | System and apparatus for control of sputter deposition process |
| JP5016819B2 (ja) * | 2006-01-11 | 2012-09-05 | 株式会社アルバック | スパッタリング方法及びスパッタリング装置 |
| JP4320019B2 (ja) * | 2006-01-11 | 2009-08-26 | 株式会社アルバック | スパッタリング装置 |
| KR101447302B1 (ko) * | 2006-12-12 | 2014-10-06 | 오를리콘 어드벤스드 테크놀로지스 아크티엔게젤샤프트 | 고전력 임펄스 마그네트론 스퍼터링(hipims)에서의 아크 억제 및 펄싱 |
-
2008
- 2008-06-30 JP JP2008170807A patent/JP5500794B2/ja active Active
-
2009
- 2009-06-17 CN CN2009801255039A patent/CN102076878B/zh active Active
- 2009-06-17 WO PCT/JP2009/060989 patent/WO2010001724A1/ja not_active Ceased
- 2009-06-17 KR KR1020117002275A patent/KR101298166B1/ko active Active
- 2009-06-17 US US12/999,085 patent/US20110120861A1/en not_active Abandoned
- 2009-06-17 KR KR1020137013816A patent/KR20130080055A/ko not_active Ceased
- 2009-06-19 TW TW098120660A patent/TW201006317A/zh unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005133110A (ja) | 2003-10-28 | 2005-05-26 | Konica Minolta Opto Inc | スパッタリング装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010001724A1 (ja) | 2010-01-07 |
| KR20130080055A (ko) | 2013-07-11 |
| CN102076878A (zh) | 2011-05-25 |
| KR20110027819A (ko) | 2011-03-16 |
| US20110120861A1 (en) | 2011-05-26 |
| CN102076878B (zh) | 2013-01-16 |
| JP5500794B2 (ja) | 2014-05-21 |
| TW201006317A (en) | 2010-02-01 |
| JP2010007162A (ja) | 2010-01-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| AMND | Amendment | ||
| PA0105 | International application |
Patent event date: 20110128 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20110128 Comment text: Request for Examination of Application |
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| PG1501 | Laying open of application | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20121004 Patent event code: PE09021S01D |
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| AMND | Amendment | ||
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20130429 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20121004 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |
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| A107 | Divisional application of patent | ||
| AMND | Amendment | ||
| J201 | Request for trial against refusal decision | ||
| PA0104 | Divisional application for international application |
Comment text: Divisional Application for International Patent Patent event code: PA01041R01D Patent event date: 20130529 |
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| PJ0201 | Trial against decision of rejection |
Patent event date: 20130529 Comment text: Request for Trial against Decision on Refusal Patent event code: PJ02012R01D Patent event date: 20130429 Comment text: Decision to Refuse Application Patent event code: PJ02011S01I Appeal kind category: Appeal against decision to decline refusal Decision date: 20130701 Appeal identifier: 2013101004040 Request date: 20130529 |
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| PB0901 | Examination by re-examination before a trial |
Comment text: Amendment to Specification, etc. Patent event date: 20130529 Patent event code: PB09011R02I Comment text: Request for Trial against Decision on Refusal Patent event date: 20130529 Patent event code: PB09011R01I Comment text: Amendment to Specification, etc. Patent event date: 20130103 Patent event code: PB09011R02I Comment text: Amendment to Specification, etc. Patent event date: 20110128 Patent event code: PB09011R02I |
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| PB0701 | Decision of registration after re-examination before a trial |
Patent event date: 20130701 Comment text: Decision to Grant Registration Patent event code: PB07012S01D Patent event date: 20130629 Comment text: Transfer of Trial File for Re-examination before a Trial Patent event code: PB07011S01I |
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| GRNT | Written decision to grant | ||
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