KR101265237B1 - Plasma processing apparatus - Google Patents

Abstract

The present invention relates to a plasma processing apparatus capable of making the plasma density uniform, the plasma processing apparatus according to the present invention comprising: a chamber having a reaction space to which a process gas is supplied; A chamber lid made of an insulating material to cover the top of the chamber; Substrate supporting means installed in the chamber to face the chamber lid; A first power supply rod disposed above the chamber lid and supplied with a high frequency power, a feed ring electrically coupled with the first power supply rod, and a high frequency power connected to the feed ring and distributed by the feed ring; An antenna module comprising a plurality of antenna ribbons; An antenna flow module for elevating the antenna module; And an antenna swing module which repeatedly rotates the first power supply rod forward and reverse so that the power supply ring swings forward and reverse by less than one rotation.

Description

PLASMA PROCESSING APPARATUS

TECHNICAL FIELD The present invention relates to a plasma processing apparatus, and more particularly, to a plasma processing apparatus capable of making the plasma density uniform.

In general, a plasma processing apparatus includes a plasma enhanced chemical vapor deposition (PECVD) apparatus or a sputter apparatus for thin film deposition, an etching apparatus for etching and patterning the deposited thin film. Such a plasma processing apparatus may be classified into a capacitively coupled plasma (CCP) method and an inductively coupled plasma (ICP) method according to an application method of high frequency power.

The capacitively coupled type is a method of generating a plasma using an electric field formed between the electrodes by applying high frequency power to opposite parallel plate electrodes, and the inductively coupled plasma type is an inductive field induced by an antenna. The plasma is generated using.

1 is a view schematically showing a plasma processing apparatus of a general inductively coupled plasma method.

Referring to FIG. 1, a general inductively coupled plasma processing apparatus includes a chamber 10, a chamber lid 20, a substrate supporting means 30, an antenna 40, and a high frequency power supply unit. 50).

The chamber 10 is formed to have an upper opening to provide a closed reaction space for the plasma treatment process. The gas supply pipe 12 is connected to one wall of the chamber 10, and the exhaust pipe 14 is connected to one bottom surface of the chamber 10.

The chamber lid 20 is installed above the chamber 10 to cover the upper opening of the chamber 10. The chamber lead 20 is made of a ceramic material so that an induction electric field is formed in the chamber 10.

The substrate supporting means 30 is installed inside the chamber 10 so as to face the chamber lid 20 to support the substrate S.

As shown in FIG. 2, the antenna 40 is disposed above the chamber lid 20 so that one coil has a spiral wound shape. At this time, the center of the antenna 40 is electrically connected to the high frequency power supply unit 50 through the power supply line, the end of the antenna 40 is grounded. The antenna 40 changes the process gas supplied to the reaction space of the chamber 10 into a plasma state by forming an induction electric field in the chamber 10 using the high frequency power supplied from the high frequency power supply unit 50. .

The high frequency power supply unit 50 generates high frequency power and supplies the same to the antenna 40.

The plasma processing apparatus of the general inductively coupled plasma type method supplies a high frequency power to the antenna 40 to form an induction electric field in the reaction space of the chamber 10 to form a plasma to process the plasma (etch) on the substrate S. Or deposition). That is, when the high frequency power is applied to the antenna 40, a magnetic field that changes in time perpendicular to the plane of the antenna 40 is formed, the magnetic field forms an induction electric field in the reaction space of the chamber 10, The induction electric field collides electrons and neutral gas solids in the chamber 10 to generate a plasma on the substrate S so that the plasma treatment process is performed by the action of the plasma.

However, in the conventional plasma processing apparatus, since the amount of current flowing through the antenna 40 having a single coil shape is the same, it is difficult to control the distribution of the induced electric field, resulting in uneven plasma density formed on the substrate S. That is, the conventional plasma processing apparatus has a high plasma density in the central region of the substrate S due to the loss of ions and electrons in the inner wall of the reaction space of the chamber 10, while in the portion near the inner wall of the chamber 10, It will have a low plasma density. Therefore, the conventional plasma processing apparatus has difficulty in uniformly controlling the plasma density.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and it is a technical object of the present invention to provide a plasma processing apparatus capable of making the plasma density uniform.

In accordance with another aspect of the present invention, a plasma processing apparatus includes a chamber having a reaction space to which a process gas is supplied; A chamber lid made of an insulating material to cover the top of the chamber; Substrate supporting means installed in the chamber to face the chamber lid; A first power supply rod disposed above the chamber lid and supplied with a high frequency power, a feed ring electrically coupled with the first power supply rod, and a high frequency power connected to the feed ring and distributed by the feed ring; An antenna module comprising a plurality of antenna ribbons; An antenna flow module for elevating the antenna module; And an antenna swing module which repeatedly rotates the first power supply rod forward and reverse so that the power supply ring swings forward and reverse by less than one rotation.

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The antenna module may further include an electrically grounded ground ring formed to surround the feed ring, and each of the plurality of antenna ribbons may be connected in a curved or spiral form between the feed ring and the ground ring. have.

According to an aspect of the present invention, there is provided a plasma processing apparatus including: a chamber having a reaction space to which a process gas is supplied; A chamber lid made of an insulating material to cover the top of the chamber; Substrate supporting means installed in the chamber to face the chamber lid; A power supply ring disposed on the chamber lid and having an inner antenna portion and an outer antenna portion to supply high frequency power, wherein the inner antenna portion is electrically coupled with the first power supply rod and the first power supply rod; And a plurality of antenna ribbons connected to the feed ring and supplied with a high frequency power distributed by the feed ring. An antenna flow module for elevating the inner antenna; And an antenna swing module which repeatedly rotates the first power supply rod forward and reverse so that the power supply ring swings forward and reverse by less than one rotation.

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The inner antenna unit may further include a ground ring that is formed to surround the feed ring and is electrically grounded, and each of the plurality of antenna ribbons may be connected in a curved or spiral form between the feed ring and the ground ring. have.

The antenna flow module elevates the feed ring by elevating the first power supply rod.

The antenna module has a hollow portion through which the first power supply rod penetrates and is electrically connected to a second power supply rod to which the high frequency power is supplied to electrically connect the second power supply rod to the outer antenna unit. It may be configured to include more.

The plasma processing apparatus may further include a power distributor electrically connected to the second power supply rod to distribute the high frequency power supplied to each of the first power supply rod and the second power supply rod.

The outer antenna unit includes a plurality of branch bars electrically coupled to the coaxial cylinder; A plurality of outer antennas electrically connected to each of the plurality of branch bars and arranged to surround the inner antenna part; And a plurality of outer ground rods installed at ends of each of the plurality of outer antennas to electrically ground ends of each of the plurality of outer antennas.

The antenna module further comprises a cylinder module for supplying the high frequency power to the outer antenna portion, wherein the cylinder module has a first hollow portion through which the first power supply rod can be lifted and lowered to the outer antenna portion. Inner cylinder coupled with; A second power supply rod installed in the inner cylinder and supplied with the high frequency power; A first insulator electrically insulating the first power supply rod and the inner cylinder; An outer cylinder formed to have a second hollow portion into which the inner cylinder is inserted and electrically grounded; And a second insulator electrically insulating the first power supply rod and the outer cylinder.

The plasma processing apparatus further includes an impedance control module for elevating the inner cylinder in the second hollow portion, wherein the impedance control module comprises: a lift shaft installed perpendicular to the inner cylinder; And an shaft elevating member configured to elevate the elevating shaft by converting the rotational movement of the driving motor into the linear movement.

A plurality of branch bars electrically coupled to the inner cylinder to bend as the inner cylinder moves up and down; A plurality of outer antennas electrically connected to each of the plurality of branch bars and arranged to surround the inner antenna part; And a plurality of outer ground rods installed at ends of each of the plurality of outer antennas to electrically ground ends of each of the plurality of outer antennas.

The plasma processing apparatus further includes an antenna swing module connected to the first power supply rod, wherein the antenna swing module swings the feed ring by repeating forward and reverse rotations less than one rotation. The first power supply rod is repeatedly rotated forward and reverse.

According to the above solution, the plasma processing apparatus according to the present invention configures the antenna to include a plurality of antenna ribbons connected between the feed ring and the ground ring, and raises the feed ring through the antenna flow module to raise and lower the impedance of the antenna. And controlling the plasma uniformity to uniform the density of the plasma formed on the central region and the edge (or edge) region of the substrate.

In addition, the present invention supplies a high frequency power to the inner antenna and the outer antenna through the cylinder module, and by lifting the inner cylinder connected to the outer antenna and the power supply rod connected to the inner antenna through the antenna flow module to the inner antenna and the outer antenna The uniformity of the plasma formed on the center region and the edge (or edge) region of the substrate can be improved by changing the impedance of.

1 is a view schematically showing a plasma processing apparatus of a general inductively coupled plasma method.
2 is a view for explaining the antenna structure shown in FIG.
3 is a schematic view of a plasma processing apparatus according to a first embodiment of the present invention.
4 is a perspective view schematically illustrating the antenna illustrated in FIG. 3.
FIG. 5 is a plan view schematically illustrating the antenna illustrated in FIG. 3.
6A and 6B are plan views illustrating modified examples of the plurality of antenna ribbons illustrated in FIG. 5.
7A to 7C are plan views illustrating another modified example of the plurality of antenna ribbons shown in FIG. 5.
8 is a cross-sectional view for describing a shield member further included in the plasma processing apparatus according to the first embodiment of the present invention.
9A and 9B are plan views illustrating various structures of the shield member illustrated in FIG. 8.
10 is a diagram illustrating a lift state of a ground ring caused by driving of an antenna flow module in the plasma processing apparatus according to the first embodiment of the present invention.
FIG. 11 is a diagram illustrating an antenna swing module further included in a plasma processing apparatus according to a first embodiment of the present invention.
12 is a schematic view of a plasma processing apparatus according to a second embodiment of the present invention.
FIG. 13 is a diagram schematically illustrating the antenna module illustrated in FIG. 12.
14A and 14B are diagrams for describing a diameter ratio between the ground ring and the substrate shown in FIG. 12.
FIG. 15 is a schematic cross-sectional view of the coaxial cylinder shown in FIG. 13.
FIG. 16 is a perspective view schematically illustrating the outer antenna unit illustrated in FIG. 13.
17 is a schematic view of a plasma processing apparatus according to a third embodiment of the present invention.
18 is an enlarged view of a portion A of FIG. 17.
19 is an equivalent circuit diagram of the antenna module shown in FIG. 17.
20 is a schematic view of a plasma processing apparatus according to a fourth embodiment of the present invention.
FIG. 21 is an enlarged view of a portion B of FIG. 20.
FIG. 22 is a view illustrating an elevated state of a ground ring and an inner cylinder when driving an antenna flow module and an impedance control module in the plasma processing apparatus according to the third embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a schematic view of a plasma processing apparatus according to a first embodiment of the present invention.

Referring to FIG. 3, the plasma processing apparatus 600 according to the first embodiment of the present invention may include a chamber 310, a chamber lead 320, a substrate support unit 330, an antenna module 340, and a high frequency power supply unit ( 350, an impedance matching unit 360, and an antenna flow module 370.

The chamber 310 is formed to have an upper opening to provide a closed reaction space for the plasma processing process. At least one exhaust pipe 314 is connected to at least one bottom surface of the chamber 310.

The reaction space provided by the chamber 310 is supplied with a process gas for performing a plasma treatment process on the substrate S from an external gas supply device (not shown). The gas supply device supplies a process gas to the reaction space of the chamber 310 through a gas supply pipe 312 connected to one wall of the chamber 310. On the other hand, the gas supply pipe 312 may be connected to the central portion of the chamber lid 320.

The chamber lid 320 is installed above the chamber 310 to cover the upper opening of the chamber 310. The chamber lead 320 is made of a ceramic material so that an induction electric field is formed in the chamber 310. At this time, a vacuum sealing member 321 is installed between the upper surface of the chamber 310 and the lower surface of the chamber lid 320. The vacuum sealing member 321 may be an o-ring. As such, the chamber lid 320 may be formed in a flat plate shape or in a dome shape.

The substrate supporting means 330 is installed inside the chamber 310 so as to face the chamber lid 320 to support the substrate S. In this case, a sealing means 331 may be installed between the substrate supporting means 330 and the bottom surface of the chamber 310.

The substrate S may be a wafer having a diameter of 300 mm or more. For example, the substrate S may be a wafer having a diameter of 300 mm or 450 mm.

The substrate support means 330 may be an electrostatic chuck that chucks or dechucks the substrate S by a chucking voltage applied from an external DC power source 333. In this case, the substrate support means 330 further comprises a helium gas line (not shown), wherein the helium gas line is between the substrate S and the substrate support means 330 when the substrate S is dechucked. By supplying helium gas to the substrate S, the substrate S is easily dechucked from the substrate supporting means 330.

In addition, the substrate support means 330 may further include a cover ring 335. The cover ring 335 covers the remaining area of the substrate support means 330 on which the substrate S is seated, excluding the substrate seating region, thereby rest of the substrate support means 330 from the plasma P formed in the reaction space. It serves to protect the territory. To this end, the cover ring 335 may be made of an insulating material (eg, a ceramic material).

Meanwhile, the substrate support means 330 described above may be electrically connected to the auxiliary high frequency power supply 337.

The auxiliary high frequency power supply 337 applies high frequency power to the substrate supporting means 330 to form an electric field on the substrate S, thereby forming plasma P formed in the reaction space by the antenna module 340 in the chamber lid 320. It is formed on the substrate (S) without remaining in the periphery. In this case, an auxiliary impedance matching circuit 339 may be installed between the substrate supporting means 330 and the auxiliary high frequency power supply 337. The auxiliary impedance matching circuit 339 matches the impedance between the substrate supporting means 330 and the auxiliary high frequency power supply 337.

The antenna module 340 is installed above the chamber lid 320 to generate an electromagnetic field to generate plasma P in the reaction space. To this end, the antenna module 340 includes an antenna cover 342, an antenna 344, and a ground plate 346.

The antenna cover 342 is formed to have an upper opening and a lower opening and installed above the chamber 310. The antenna cover 342 wraps the antenna 344 and supports the ground plate 346.

The antenna 344, as shown in FIGS. 4 and 5, has a first power supply rod 110, a feed ring 120, a ground ring 130, and first to fourth antenna ribbons 142, 144. 146, 148).

The first power supply rod 110 is vertically installed to be electrically connected to the feed ring 120, electrically connected to the high frequency power supply 350, and supported by the antenna flow module 370 so as to be movable. The first power supply rod 110 is supplied with a high frequency (eg, High Frequency (HF) power or Very High Frequency (VHF) power from the high frequency power supply 350. At this time, the HF power is 3 MHz ~. With a frequency in the range of 20 MHz, the VHF power may have a frequency in the range of 22 MHz to 150 MHz.

The feed ring 120 is formed to have a circular shape or a polygonal shape in which each corner portion is rounded and electrically connected to the first power supply rod 110. To this end, the feed ring 120 is provided with a feed bracket (120a) formed in the "-" or "자" shape, the first power supply rod 110 in the center region of the feed bracket (120a) It is installed vertically. The feeding ring 120 evenly distributes the high frequency power applied from the first power supply rod 110 through the feeding bracket 120a. In addition, since the feed ring 120 has a circular or polygonal band shape, it serves to disperse the concentration of the electromagnetic field by the applied high frequency power.

The diameter of the feed ring 120 may vary depending on the size (or diameter) of the substrate S on which the plasma process is to be performed, but may have a range of approximately 20 mm to 200 mm. In addition, the feed ring 120 has a greater height than the thickness, the thickness of the feed ring 120 preferably has a range of 0.1mm to 30mm.

The ground ring 130 is formed in the same shape as the feed ring 120 to surround the feed ring 120 and is grounded to a ground power source through the plurality of internal ground rods 131 and 133. In this case, each of the plurality of internal ground rods 131 and 133 may be grounded to a ground power source through each of the ground brackets 135 and 137 having a predetermined shape. The ground ring 130 returns the high frequency power applied to the first to fourth antenna ribbons 142, 144, 146, and 148.

Each of the first to fourth antenna ribbons 142, 144, 146, and 148 is formed to have a curved shape to be connected in parallel between the feed ring 120 and the ground ring 130 to form a parallel resonance antenna. In this case, one side of each of the first to fourth antenna ribbons 142, 144, 146, and 148 is coupled to the side surface of the feed ring 120 to be electrically connected to the feed ring 120, and the first to fourth antenna ribbons. The other side of each of the 142, 144, 146, and 148 is coupled to each of the connecting protrusions 142a, 144a, 146a, and 148a installed perpendicular to the ground ring 130, and is electrically grounded to the ground ring 130. Each of the first to fourth antenna ribbons 142, 144, 146, and 148 is installed at the feed ring 120 to have an interval of 90 degrees with respect to the center point of the feed ring 120.

Each of the first to fourth antenna ribbons 142, 144, 146, and 148 may be made of a highly conductive metal material. For example, each of the first to fourth antenna ribbons 142, 144, 146, and 148 may include a conductor made of copper and a plating layer made of silver (Ag), which is plated on the entire conductor.

Each of the first to fourth antenna ribbons 142, 144, 146, and 148 has a rectangular cross section that is vertically erected to face the chamber lid 320, that is, the long side is erected vertically. Accordingly, each of the first to fourth antenna ribbons 142, 144, 146, and 148 may be connected between the feed ring 120 and the ground ring 130 to have a curved shape. Each of the first to fourth antenna ribbons 142, 144, 146, and 148 may have a thickness (or a short side width in a standing state) of 0.05 mm to 2 mm.

Each of the first to fourth antenna ribbons 142, 144, 146, and 148 described above may be rotated in a spiral form at equal intervals from the feed ring 120 to the ground ring 130. Each of the first to fourth antenna ribbons 142, 144, 146, and 148 is rotated 360 degrees (or wound) or rotated once to be connected to the ground ring 130 by the feed ring 120 to have a spiral shape. Evenly distributed and form a uniform magnetic field that changes in time according to the supplied high frequency power.

As such, the antenna 344 distributes the high frequency power evenly through the circular or polygonal feed ring 120, and evenly distributes the evenly distributed high frequency power between the feed ring 120 and the ground ring 130. By supplying the first to fourth antenna ribbons 142, 144, 146, and 148 connected in parallel in a spiral form, a uniform magnetic field is formed to improve the uniformity of the plasma density. In addition, the antenna 344 applies VHF power because the first to fourth antenna ribbons 142, 144, 146, and 148 having the same impedance are connected in parallel and the impedance of the antenna 100 is reduced to 1/4. However, sufficient high frequency current may be applied to each of the first to fourth antenna ribbons 142, 144, 146, and 148 to facilitate generation of plasma and to smoothly supply high frequency power to the center region.

Meanwhile, the antenna 344 has been described as having four antenna ribbons 142, 144, 146, and 148, but is not limited thereto. For example, the antenna 344 may include a plurality of antenna ribbons, for example, two to ten antenna ribbons. It may be configured to include, each of the plurality of antenna ribbons may have a curved or spiral form.

As an example, the antenna 344 according to the first modified embodiment may include two antenna ribbons 142 and 144, as shown in FIGS. 6A and 6B. At this time, each of the two antenna ribbons (142, 144), as shown in Figure 6a, is connected to the ground ring 130 by rotating 360 degrees or one rotation to have a spiral form from the feed ring 120, or As shown in 6b, the feed ring 120 may be connected to the ground ring 130 by rotating 720 degrees or two turns to have a spiral shape. Each of the two antenna ribbons 142 and 144 is installed at the feed ring 120 to be spaced 180 degrees from the center point of the feed ring 120.

As another example, the antenna 344 according to the second modified embodiment may include three antenna ribbons 142, 144, and 146 as illustrated in FIGS. 7A to 7C. In this case, each of the three antenna ribbons 142, 144, and 146 is connected to the ground ring 130 by 3.6 degree rotation or 0.1 rotation so as to have a curved shape from the feed ring 120, as shown in FIG. 7A. As shown in FIG. 7B, it may be connected to the ground ring 130 by 180 degrees or 0.5 turns, or as shown in FIG. 7C, or may be connected to the ground ring 130 by 360 degrees or 1 rotation. Each of the three antenna ribbons 142, 144, and 146 is installed in the feed ring 120 to be spaced 120 degrees from the center point of the feed ring 120.

Meanwhile, the antenna 344 described above may further include a shield member 150 connected to the bottom of the ground ring 130 as shown in FIG. 8.

The shield member 150 serves to prevent an excessively high strength of the capacitively coupled electric field generated by the plurality of antenna ribbons by being grounded to the ground power source through the ground ring 130. That is, the shield member 150 transmits a magnetic field that changes in time, and shields an electric field by a plurality of antenna ribbons. To this end, the shield member 150 is formed to have a shape overlapping each of the power supply ring 120, the plurality of antenna ribbons 142, 144, 146, 148, and the ground ring 130 described above.

Specifically, the shield member 150 according to an embodiment includes a center shield ring 152, an edge shield ring 154, and a plurality of curved bridges 156, as shown in FIG. 9A. Can be.

The center shield ring 152 is formed to have the same shape as the feed ring 120 described above and disposed to overlap the feed ring 120.

The edge shield ring 154 is formed to have the same shape as the above-described ground ring 130 and disposed to overlap the ground ring 130, and is coupled to the bottom surface of the ground ring 130.

The plurality of curved bridges 156 are rotated in a curved or spiral form between the center shield ring 152 and the edge shield ring 154 so as to overlap each of the plurality of antenna ribbons 142, 144, 146, and 148 described above. Connected.

As shown in FIG. 9B, the shield member 150 according to another embodiment may include the power supply ring 120, the plurality of antenna ribbons 142, 144, 146, and 148, and the ground ring 130, respectively. It may be formed to have a plurality of bridges 156 in a radial shape to overlap. An edge portion of the shield member 150 having the radial shape is coupled to the bottom surface of the ground ring 130.

The shield member 150 described above is not coupled to the bottom surface of the ground ring 130, and as shown in FIG. 3, the feed ring 120, the plurality of antenna ribbons 142, 144, 146, and 148, and the ground ring are illustrated in FIG. 3. It may be disposed on the chamber lid 320 so as to overlap each of the 130.

3 again, the ground plate 346 is formed to have a through hole through which the first power supply rod 110 of the antenna 344 passes. The ground plate 346 is installed to cover the upper opening of the antenna cover 342 to support the antenna 344. At this time, the ground plate 346 is coupled to the ground brackets 135 and 137 of the antenna 344 by fastening bolts (not shown) to support the antenna 344. Meanwhile, the ground plate 346 may be coupled to the internal ground rods 131 and 133 of the antenna 344 by fastening bolts (not shown) to support the antenna 344.

The ground plate 346 is grounded to a ground power source to ground ground brackets 135 and 137 or inner ground rods 131 and 133 coupled by fastening bolts, ie, ground ring 130 of antenna 344. Let's do it.

The antenna module 340 described above makes the plasma density formed on the entire area of the substrate S uniform by forming an electromagnetic field according to the high frequency power applied from the high frequency power supply unit 350 using the antenna 344 described above. .

The high frequency power supply unit 350 is electrically connected to the first power supply rod 110 of the antenna 344 through the power supply line 352. The high frequency power supply unit 350 generates high frequency power including the HF or the VHF and applies the generated high frequency power to the first power supply rod 110.

Since the power supply line 352 connected to the first power supply rod 110 may be disconnected by the flow of the first power supply rod 110 by the antenna flow module 370, the power supply line 352 described above. ) Is made of a flexible metal material. Accordingly, the power supply line 352 is bent in accordance with the flow of the first power supply rod 110 according to the driving of the antenna flow module 470.

The impedance matching unit 360 is installed on the antenna module 340 to match the impedance of the high frequency power applied to the first power supply rod 110 from the high frequency power supply 350. To this end, the impedance matching unit 360 includes an impedance matching circuit 362 connected to the power supply line 352 and the ground plate 346. The impedance matching circuit 362 matches the load impedance of the high frequency power with the source impedance by using the first and second impedance elements Z1 and Z2 connected to the power supply line 352. In this case, each of the first and second impedance elements Z1 and Z2 may be formed of at least one of a capacitor and an inductor.

The antenna flow module 370 lifts the antenna module 340, that is, the first power supply rod 110 of the antenna 344, and lifts the feed ring 120 up and down to control the impedance of the antenna 344. It serves to control the uniformity of the plasma density. To this end, the antenna flow module 370 includes a drive member 372 and a motion conversion member 374.

The driving member 372 may be a driving motor or a driving cylinder installed on the cover of the impedance matching unit 360, which will be assumed to be a driving motor.

The motion conversion member 374 raises and lowers the feed ring 120 of the antenna 344 by converting the rotational motion of the drive member 372 into linear motion. Specifically, the motion conversion member 374 is installed on the first power supply rod 110 so as to be connected to the drive member 372, and is lifted by lifting the first power supply rod 110 in accordance with the driving of the driving member 372. 1 As the power supply rod 110 is raised and lowered, the feed ring 120 is raised and lowered. For example, the motion conversion member 374 may be formed of a rack gear and a pinion gear. In this case, the rack gear is made of an insulating material, for example, a ceramic material and is installed in the first power supply rod 110 of the antenna 344. The pinion gear then linearly moves the rack gear by rotating in conjunction with rotation of the drive member 372.

In the above-described antenna flow module 370, as shown in FIG. 10, the power supply ring is lifted by elevating the power supply ring 120 by elevating the first power supply rod 110 according to the driving of the driving member 372. 120 and the height of the ground ring 130 is adjusted. At this time, the antenna flow module 370 raises and lowers the ground ring 130 such that the feed ring 120 has an inclination of ± 45 degrees or less from the ground ring 130 or a height difference in a range of ± 100 mm. Accordingly, the bottom surface of each of the first to fourth antenna ribbons 142, 144, 146, and 148 disposed in a curved or spiral form between the feed ring 120 and the ground ring 130 may be formed in the feed ring 120. Depending on the height may be located side by side or arranged to have a predetermined slope.

When the feed ring 120 is higher than the ground ring 130 according to the driving of the antenna flow module 370, the plasma density in the central region of the antenna 344 is relatively low. On the contrary, when the feed ring 120 is lower than the ground ring 130 according to the driving of the antenna flow module 370, the plasma density in the center region of the antenna 344 becomes relatively high. Accordingly, the antenna driving module 370 lifts the feed ring 120 to a position optimized for each plasma process to fix the position of the feed ring 120, or repeatedly lifts the feed ring 120 during the plasma process. Can be.

The plasma processing method using the plasma processing apparatus 600 according to the first embodiment of the present invention as described above is as follows.

First, the substrate S is loaded on the substrate support means 320, and the substrate S loaded on the substrate support means 320 is applied to the substrate support means 320 by applying a chucking voltage to the substrate support means 320. Fix it by electrostatic adsorption.

Then, the antenna flow module 370 is driven to flow the antenna module 340 to adjust the distance between the antenna module 340 and the chamber lid 320. Specifically, the antenna flow module 370 is driven to raise and lower the feed ring 120 according to the elevation of the first power supply rod 110 to perform the position of the feed ring 120 positioned on the chamber lid 320. Optimize for your plasma process.

Then, the process gas is injected into the reaction space of the chamber 310, and the high frequency power is applied to the first power supply rod 110 to uniform the reaction space through a uniform electromagnetic field formed by the plurality of antenna ribbons. By forming the plasma P, a deposition material by the plasma P action is deposited on the substrate S.

As described above, the plasma processing apparatus and the plasma processing method according to the first embodiment of the present invention configure the antenna 344 to include a plurality of antenna ribbons connected between the feed ring 120 and the ground ring 130. Then, the power supply ring 120 is raised and lowered through the antenna flow module 370 to control the impedance and the plasma uniformity of the antenna 344 so that the plasma formed on the center region and the edge (or edge) region of the substrate S ( Make the density of P) uniform.

In addition, since the impedance of the antenna 344 is reduced by the plurality of antenna ribbons connected in parallel, the plasma processing apparatus 600 according to the first embodiment of the present invention has a high frequency sufficient for each of the plurality of antenna ribbons even when VHF power is applied. A current can be applied to facilitate the generation of plasma, and smoothly supply high frequency power to the center region of the antenna 344.

Meanwhile, the plasma processing apparatus 600 according to the first embodiment of the present invention described above may further include an antenna swing module 380 as illustrated in FIG. 11.

The antenna swing module 380 serves to precisely control the electromagnetic field formed by the antenna 344 by swinging the antenna 344 of the antenna module 340 at a predetermined angle. In this case, the swing means that the antenna 344 repeats forward rotation of less than one rotation and reverse rotation of less than one rotation. To this end, the antenna swing module 380 is configured to include a driving means 382 and a rotating member 384.

The driving means 382 may be a driving motor or a driving cylinder installed on the cover of the impedance matching unit 360, which is assumed to be a driving motor.

The rotating member 384 is installed on the first power supply rod 110 of the antenna 344 so as to be connected to the driving means 382, thereby rotating the first power supply rod 110 in accordance with the driving of the driving means 382. The feed ring 120 is allowed to swing at an angle. To this end, the rotating member 384 may be formed of an insulating material, for example, a ceramic material, and may include a rotating gear installed in the first power supply rod 110 of the antenna 344. The rotation member 474 swings the first power supply rod 110 at a predetermined angle according to the forward rotation or reverse rotation of the driving member 472 so that the feed ring 120 swings at a predetermined angle.

The above-described antenna swing module 380 swings the feed ring 120 through the swing of the first power supply rod 110 during the plasma processing process, thereby providing the first to fourth antenna ribbons 142 shown in FIG. 4. The spacing between 144, 146, and 148 is varied to change the electromagnetic field formed by the antenna ribbon.

As such, the plasma processing apparatus and the plasma processing method according to the first embodiment of the present invention including the antenna swing module 380 may rotate the feed ring 120 at a predetermined angle using the antenna swing module 380 during the plasma processing process. By swinging at a low level, the plasma density formed on the entire region of the substrate S can be more uniformly controlled.

12 is a schematic view of a plasma processing apparatus according to a second embodiment of the present invention.

12, the plasma processing apparatus 700 according to the second embodiment of the present invention may include a chamber 310, a chamber lead 320, a substrate support means 330, an antenna module 540, and a high frequency power supply unit ( 350, an impedance matching unit 360, and an antenna flow module 370. In the plasma processing apparatus 700 according to the second embodiment of the present invention having the above configuration, the remaining components except for the antenna module 540 are the same as those of the plasma processing apparatus 600 according to the first embodiment of the present invention. Therefore, duplicate descriptions thereof will be omitted.

The antenna module 540 is installed above the chamber lid 320 to generate an electromagnetic field to generate plasma P in the reaction space. To this end, the antenna module 540 includes an antenna cover 542, an antenna 544, and a ground plate 546.

The antenna cover 542 is formed to have an upper opening and a lower opening and installed above the chamber 310. The antenna cover 542 wraps the antenna 544 and supports the ground plate 546.

As illustrated in FIG. 13, the antenna 544 includes an inner antenna unit 210, a coaxial cylinder 220, and an outer antenna unit 230.

The inner antenna unit 210 includes a first power supply rod 110, a power supply ring 120, a ground ring 130, and a plurality of antenna ribbons 142, 144, 146, and 148. Since it has the same structure as the antenna 344 of the plasma processing apparatus 600 according to the first embodiment of the present invention described above with reference to FIGS. 3 to 11, a redundant description thereof will be omitted.

In the antenna 544, the ground ring 130 of the inner antenna portion 210 and the substrate (S) to form a uniform plasma (P) on the substrate (S) that is seated on the substrate support means 330 It may be formed to have the same diameter, or as shown in Figure 14a and 14b, it may be formed to have a diameter larger or smaller than the substrate (S). As a result, assuming that the diameter of the substrate S is 'X' and the diameter of the ground ring 130 is 'Y', the ratio of X: Y is in a ratio of 1: 0.5 to 1: 1.5. Can be set.

In the inner antenna unit 210, the feed ring 120 is elevated in accordance with the elevation of the first power supply rod 110 according to the driving of the antenna flow module 370. That is, the antenna flow module 370 lifts the power supply ring 120 by elevating the first power supply rod 110 to perform the same as in the plasma processing apparatus 600 according to the first embodiment of the present invention. The impedance and the plasma uniformity of the antenna 544 are controlled.

As shown in FIG. 15, the coaxial cylinder 220 includes a cylinder body 221, an insulator 223, an upper plate 225, and a lower plate 227.

The cylinder body 221 has a cylindrical portion 221a forming the hollow portion 221h, an upper flange 221b protruding horizontally from the upper surface of the cylindrical portion 221a, and a horizontal direction from the lower surface of the cylindrical portion 221a. It may be configured to include a lower flange 221c protruding into the. The cylinder body 221 is made of a metallic material having conductivity.

The first power supply rod 110 of the inner antenna portion 210 is inserted and penetrated through the hollow portion 221h of the cylinder body 221.

The insulator 223 is formed in the hollow portion 221h to electrically insulate the cylinder body 221 and the first power supply rod 110 inserted into the hollow portion 221h. To this end, the insulator 223 may be made of a Teflon-based resin material.

The upper plate 225 is coupled to the upper flange 221b of the cylinder body 221 by fastening bolts (not shown) and electrically connected to the cylinder body 221. The upper plate 225 receives the high frequency power from an external high frequency power supply unit (not shown) through the second power supply rod 228 and transmits the high frequency power to the cylinder body 221.

The second power supply rod 228 is installed on the upper plate 225 and electrically connected to the high frequency power supply unit.

The second power supply rod 228 may be electrically connected to the high frequency power supply through the power divider 229. The power divider 229 distributes the high frequency power (or current) applied to the second power supply rod 228 from the high frequency power supply. For example, the power divider 229 distributes the current flowing through the inner antenna unit 210 and the current flowing through the outer antenna unit 230. The power divider 229 may be made of a variable capacitor, an inductor, or a transformer.

The lower plate 227 is coupled to the lower flange 221c of the cylinder body 221 by fastening bolts (not shown) and electrically connected to the cylinder body 221. The lower plate 227 serves to transmit the high frequency power transmitted through the cylinder body 221 to the outer antenna unit 230.

On the other hand, the insulator 223 of the coaxial cylinder 220 described above may be formed with a cooling passage (not shown) through which a refrigerant for releasing heat generated from the first power supply rod 110 is circulated.

As described above, the coaxial cylinder 220 is disposed on the insulator 223 provided between the first power supply rod 110 connected to the inner antenna unit 210 and the cylinder body 221 connected to the outer antenna unit 230. The impedance of the outer antenna unit 230 and the inner antenna unit 210 is changed through the capacitance formed by the capacitance, and the amount of current flowing through each of the outer antenna unit 230 and the inner antenna unit 210 is changed, thereby changing the plasma density. Make uniform.

In FIG. 13, the outer antenna unit 230 is formed in the same shape as the ground ring 130 to surround the inner antenna unit 210, and is electrically connected to and supported by the coaxial cylinder 220. The outer antenna unit 230 forms a magnetic field that changes in time under the outer region of the inner antenna unit 210 according to the high frequency power applied through the coaxial cylinder 220. To this end, the outer antenna unit 230, as shown in Figure 16, having a parallel dual stacked antenna structure, the first to fourth branch bars (231a, 231b, 231c, 231d), the first to fourth The outer antennas 233a, 233b, 233c, and 233d and the first to fourth outer ground rods 235a, 235b, 235c, and 235d are configured.

Each of the first to fourth branch bars 231a, 231b, 231c, and 231d is coupled to the side of the lower plate 227 of the coaxial cylinder 220 to be connected to the first to fourth outer antennas 233a, 233b, 233c, and 233d. Each and the lower plate 227 are electrically connected. In this case, each of the first to fourth branch bars 231a, 231b, 231c, and 231d may be coupled to the side surface of the lower plate 227 to have a “╋” shape. For example, each of the first to fourth branch bars 231a, 231b, 231c, and 231d may be disposed at intervals corresponding to 90 degrees with respect to the center point of the lower plate 227. Each of the first to fourth branch bars 231a, 231b, 231c, and 231d equally distributes the high frequency power supplied from the coaxial cylinder 220, thereby providing the first to fourth outer antennas 233a, 233b, 233c, and 233d. Feed each one.

Each of the first to fourth outer antennas 233a, 233b, 233c, and 233d may be each of the first to fourth branch bars 231a, 231b, 231c, and 231d and the first to fourth outer ground rods 235a, 235b, and 235c. 235d are electrically connected to each other, and are arranged to have the same shape as the ground ring 130 (for example, a circle shape or a polygonal shape) to surround the inner antenna part 210. For example, each of the first to fourth outer antennas 233a, 233b, 233c, and 233d is formed in a semicircle shape, and each of the adjacent first to fourth outer antennas 233a, 233b, 233c, and 233d overlaps each other. Form a circle. Each of the first to fourth outer antennas 233a, 233b, 233c, and 233d may be connected to the inner antenna unit 210 according to the high frequency power supplied from each of the first to fourth branch bars 231a, 231b, 231c, and 231d. It forms a magnetic field that changes in time under the outer region. To this end, each of the first to fourth outer antennas 233a, 233b, 233c, and 233d may include the first antenna members 233a1, 233b1, 233c1, and 233d1, the second antenna members 233a2, 233b2, 233c2, and 233d2. It is comprised including the 3rd antenna member 233a3, 233b3, 233c3, and 233d3.

Each of the first antenna members 233a1, 233b1, 233c1, and 233d1 is positioned at a reference height and connected to each branch bar 231a, 231b, 231c, and 231d. In this case, the reference height may correspond to the position of the ground ring 130. Each of the first antenna members 233a1, 233b1, 233c1, and 233d1 may be formed in a curved shape to have a predetermined curvature. For example, angles of both ends of the first antenna members 233a1, 233b1, 233c1, and 233d1 from the center point of the inner antenna unit 210 may be approximately 45 degrees.

One side of each of the first antenna members 233a1, 233b1, 233c1, and 233d1 is connected to each branch bar 231a, 231b, 231c, and 231d through first connecting rods 237a1, 237b1, 237c1, and 237d1 having a predetermined height. Can be electrically connected. Accordingly, each of the first antenna members 233a1, 233b1, 233c1, and 233d1 is disposed lower than the branch bars 231a, 231b, 231c, and 231d by the height of the first connection rods 237a1, 237b1, 237c1, and 237d1. .

Each of the second antenna members 233a2, 233b2, 233c2, and 233d2 is positioned at a height lower than the reference height and is connected to the other side of the first antenna members 233a1, 233b1, 233c1, and 233d1. Each of the first antenna members 233a1, 233b1, 233c1, and 233d1 may be formed in a curved shape to have a predetermined curvature. For example, an angle between both ends of each of the second antenna members 233a2, 233b2, 233c2, and 233d2 may be about 90 degrees from the center point of the inner antenna unit 210.

One side of each of the second antenna members 233a2, 233b2, 233c2, and 233d2 is connected to the first antenna members 233a1, 233b1, 233c1, and 233d1 through the second connecting rods 237a2, 237b2, 237c2, and 237d2. It may be electrically connected to the other side of the. Accordingly, each of the second antenna members 233a2, 233b2, 233c2, and 233d2 is disposed lower than the first antenna members 233a1, 233b1, 233c1, and 233d1 by the height of the second connection rods 237a2, 237b2, 237c2, and 237d2. do.

Each of the third antenna members 233a3, 233b3, 233c3, and 233d3 is positioned at a reference height and connected to the other side of the second antenna members 233a2, 233b2, 233c2, and 233d2, and each outer ground rod 235a, 235b, 235c, 235d). Each of the third antenna members 233a3, 233b3, 233c3, and 233d3 may be formed in a curved shape to have a predetermined curvature. For example, an angle between both ends of each of the third antenna members 233a3, 233b3, 233c3, and 233d3 may be approximately 45 degrees from the center point of the inner antenna unit 210.

One side of each of the third antenna members 233a3, 233b3, 233c3, and 233d3 is connected to the second antenna members 233a2, 233b2, 233c2, and 233d2 through the third connecting rods 237a3, 237b3, 237c3, and 237d3. It may be electrically connected to the other side of the. Accordingly, each of the third antenna members 233a3, 233b3, 233c3, and 233d3 is higher than the second antenna members 233a2, 233b2, 233c2, and 233d2 by the height of the third connecting rods 237a3, 237b3, 237c3, and 237d3. Is placed in position.

Each of the first antenna members 233a1, 233b1, 233c1, and 233d1 and the third antenna members 233a3, 233b3, 233c3, and 233d3 of each of the first to fourth outer antennas 233a, 233b, 233c, and 233d described above are adjacent to each other. The first to fourth outer antennas 233a, 233b, 233c, and 233d are disposed above the second antenna members 233a2, 233b2, 233c2, and 233d2. Accordingly, since the outer antenna unit 230 has a two-layer structure by overlapping each of the adjacent first to fourth outer antennas 233a, 233b, 233c, and 233d up and down, the outer antenna unit 230 has a capacitive coupling having a higher voltage and electric field. Decrease. That is, although the intensity of the current flowing through the first antenna members 233a1, 233b1, 233c1, and 233d1 to which the high frequency power is supplied and the third antenna member 233a3, 233b3, 233c3, and 233d3 grounded to the ground power source are the same, The voltage across each of the first and third antenna members is high. In order to prevent this, as described above, each of the first and third antenna members is positioned above, and the second antenna member is positioned below the first and third antenna members. Accordingly, each of the first to fourth outer antennas 233a, 233b, 233c, and 233d has the same impedance.

The above-described antenna 544 supplies high frequency power to each of the inner antenna unit 210 and the outer antenna unit 230 through the coaxial cylinder 220, and the feed ring 120 and the antenna ribbon of the inner antenna unit 210. The inner antenna part 210 is formed through the outer antenna part 230 having a parallel dual stacked antenna structure while forming a uniform magnetic field in the lower region of the inner antenna part 210 using the 142, 144, 146, and 148. A uniform magnetic field can be formed below the outer region of the.

Again in FIG. 12, the ground plate 546 is a first through hole through which the first power supply rod 110 of the antenna 544 penetrates, and a second power supply rod 228 of the antenna 544 penetrates. It is formed to have a second through hole. The ground plate 546 is installed to cover the upper opening of the antenna cover 542 to support the antenna 544. In this case, the ground plate 546 is coupled to the ground brackets 135 and 137 and the outer ground rods 235a, 235b, 235c, and 235d of the antenna 544 by fastening bolts (not shown) to support the antenna 544. do. Meanwhile, the ground plate 546 may be coupled to the internal ground rods 131 and 133 of the antenna 544 by a fastening bolt (not shown) to support the antenna 544.

The ground plate 546 grounds the ground brackets 135 and 137 or the inner ground rods 131 and 133 and the outer ground rods 235a, 235b, 235c, and 235d coupled by fastening bolts by being grounded to a ground power source. That is, the ground ring 130 of the antenna 544 is grounded.

As such, the antenna module 540 uniforms the plasma density formed on the entire region of the substrate S by forming an electromagnetic field according to the high frequency power applied from the high frequency power supply unit 350 using the antenna 544. Let's do it. That is, the above-described antenna module 540 measures the ratio of current flowing through each of the inner antenna unit 210 and the outer antenna unit 230 through power or current distribution of the power divider 229 connected to the outer antenna unit 230. By controlling, the density of the plasma P formed on the center region and the edge (or corner) region of the substrate S is made uniform.

Meanwhile, the plasma processing apparatus 700 according to the second embodiment of the present invention may further include an antenna swing module 380 as shown in FIG. 11, and as described above, the antenna swing By swinging the feed ring 120 of the inner antenna unit 210 through the module 380, the electromagnetic field formed by the inner antenna unit 210 is precisely controlled, and the plasma is formed on the entire area of the substrate S. The density can be controlled more evenly.

As described above, the plasma processing apparatus and the plasma processing method according to the second embodiment of the present invention except that the plasma P is formed by supplying high frequency power to the inner antenna 210 and the outer antenna 230. Is the same as the plasma processing method according to the first embodiment of the present invention described above.

FIG. 17 is a view schematically showing a plasma processing apparatus according to a third embodiment of the present invention, and FIG. 18 is an enlarged view of portion A of FIG. 17.

17 and 18, the plasma processing apparatus 800 according to the third embodiment of the present invention may include a chamber 310, a chamber lead 320, a substrate support means 330, an antenna module 840, and a high frequency wave. It is configured to include a power supply unit 350, impedance matching unit 360, and the antenna flow module 370. Except for the antenna module 840 in the plasma processing apparatus 800 according to the third embodiment of the present invention having the above configuration, the remaining components are the same as those of the plasma processing apparatus 700 according to the second embodiment of the present invention. Therefore, duplicate descriptions thereof will be omitted.

The antenna module 840 is installed above the chamber lid 320 to generate an electromagnetic field to generate plasma P in the reaction space. To this end, the antenna module 840 includes an antenna cover 842, an antenna 844, and a ground plate 846.

The antenna cover 842 is formed to have an upper opening and a lower opening and installed above the chamber 310. The antenna cover 842 wraps the antenna 844 and supports the ground plate 846.

The antenna 844 includes an inner antenna unit 210, a cylinder module 820, and an outer antenna unit 230.

As shown in FIGS. 3 to 11B, the inner antenna unit 210 includes a first power supply rod 110, a power supply ring 120, a ground ring 130, and a plurality of antenna ribbons 142 and 144. , 146, and 148, which have the same structure as the antenna 344 of the plasma processing apparatus 600 according to the first embodiment of the present invention. .

The cylinder module 820 includes an inner cylinder 821, a first insulator 823, an outer cylinder 825, a second insulator 827, and a second power supply rod 828.

The inner cylinder 821 is formed in a cylindrical shape to have a first hollow portion 821h through which the first power supply rod 110 of the inner antenna unit 210 passes. In addition, upper and lower flanges are provided at each of the upper and lower portions of the inner cylinder 821. The inner cylinder 821 is made of a conductive metal material.

The first power supply rod 110 of the inner antenna portion 210 is inserted into and penetrates the first hollow portion 821h of the inner cylinder 821. As described above, the first power supply rod 110 is elevated in the first hollow part 821h according to the driving of the antenna flow module 370 to thereby open the feed ring 120 of the inner antenna part 210. Elevate.

The first insulator 823 is installed in the first hollow portion 821h to electrically insulate the first power supply rod 110 inserted into the inner cylinder 821 and the first hollow portion 821h. To this end, the first insulator 823 may be made of a Teflon-based resin material. As shown in FIG. 19, the first insulator 823 forms a first capacitor C1 between the inner cylinder 821 and the first power supply rod 110 to form the first power supply rod 110. The impedance of the inner antenna unit 210 connected to the inner antenna unit 210 and the outer antenna unit 230 connected to the inner cylinder 821 is changed, and flows through the first power supply rod 110 to the inner antenna unit 210. By varying the amount of current and the amount of current flowing through each of the outer antenna units 230 through the inner cylinder 821, the plasma density is made uniform.

The outer cylinder 825 is formed to have a second hollow portion 825h through which the inner cylinder 821 is inserted and through which the first and second power supply rods 110 and 827 pass, and is installed on the ground plate 846. do. At this time, the outer cylinder 825 is positioned above the inner cylinder 821 so as not to overlap the inner cylinder 821. That is, the lower surface of the outer cylinder 825 is spaced apart from the upper surface of the inner cylinder 821. The outer cylinder 825 is made of a conductive metal material and is electrically grounded by being coupled to the ground plate 846.

The second insulator 827 is installed in the second hollow portion 825h to electrically connect the first power supply rod 110 inserted into the outer cylinder 825 and the first and second hollow portions 821h and 825h. Insulate To this end, the second insulator 827 may be made of a Teflon-based resin material. As shown in FIG. 19, the second insulator 827 forms a second capacitor C2 between the outer cylinder 825 and the first power supply rod 110 to form the first power supply rod 110. By changing the impedance of the inner antenna unit 210 connected to the through, and by changing the amount of current flowing through the first power supply rod 110 to the inner antenna unit 210 to make the plasma density uniform.

The second power supply rod 828 is electrically coupled to the upper flange of the inner cylinder 821 through the second hollow portion 825h of the outer cylinder 825. The second power supply rod 828 supplies the high frequency power supplied from the high frequency power supply unit 350 through the impedance matching unit 360 to the inner cylinder 821.

Meanwhile, a current divider 229 may be connected to the second power supply rod 828. The current divider 229 distributes or distributes current of the high frequency power supplied from the high frequency power supply unit 350 through the impedance matching unit 360 to supply the second power supply rod 228. For example, the power divider 229 distributes the current flowing through the inner antenna unit 210 and the current flowing through the outer antenna unit 230. The power divider 229 may be made of a variable capacitor, an inductor, or a transformer. The power divider 229 may be omitted.

On the other hand, the first insulator 823 and / or the second insulator 827 of the above-described cylinder module 820 is a cooling flow path through which a refrigerant for releasing heat generated from the first power supply rod 110 is circulated (not shown) May be formed.

17 and 18 again, the outer antenna portion 230 is formed in the same shape as the ground ring 130 to surround the inner antenna portion 210 and electrically coupled to the inner cylinder 821 of the cylinder module 820. do. As shown in FIGS. 13 and 16, the outer antenna unit 230 includes first to fourth branch bars 231a, 231b, 231c and 231d, and first to fourth outer antennas 233a, 233b and 233c. , 233d), and the first to fourth outer ground rods 235a, 235b, 235c, and 235d, and electrically connected to the inner cylinder 821 through the plurality of branch bars 231a, 231b, 231c, and 231d. Except for being coupled, since it has the same structure as the outer antenna 230 of the plasma processing apparatus 700 according to the second embodiment of the present invention described above, a duplicate description thereof will be omitted.

The ground plate 846 is formed to have a through hole in which the cylinder module 820 of the antenna 844 is installed. The ground plate 846 is installed to cover the upper opening of the antenna cover 842 to support the antenna 844. At this time, the ground plate 846 is a grounding bolt (235a, 235b, 235c, 235d) of the ground bracket (135, 137) of the inner antenna portion 210 and the outer antenna portion 230 by a fastening bolt (not shown) Coupled to support antenna 844. Meanwhile, the ground plate 846 may be coupled to the inner ground rods 131 and 133 of the inner antenna portion 210 of the antenna 844 by a fastening bolt (not shown) to support the antenna 844.

The ground plate 846 grounds the ground brackets 135 and 137 or the inner ground rods 131 and 133 and the outer ground rods 235a, 235b, 235c, and 235d coupled by fastening bolts by being grounded to a ground power source. That is, the ground ring 130 of the antenna 844 is grounded.

The plasma processing method using the plasma processing apparatus 800 according to the third embodiment of the present invention as described above is as follows.

First, the substrate S is loaded on the substrate support means 320, and the substrate S loaded on the substrate support means 320 is applied to the substrate support means 320 by applying a chucking voltage to the substrate support means 320. Fix it by electrostatic adsorption.

Then, the antenna flow module 370 is driven to flow the antenna module 840 to adjust the distance between the antenna module 840 and the chamber lid 320. Specifically, the first and second capacitors C1 and C2 formed in the cylinder module 820 by driving the antenna flow module 370 to elevate the feed ring 120 according to the elevation of the first power supply rod 110. The capacitance and the position of the feed ring 120 located on the chamber lid 320 are optimized for the plasma process to be performed.

Then, the process gas is injected into the reaction space of the chamber 310 and formed by the inner and outer antenna parts 210 and 230 by applying high frequency power to the first and second power supply rods 110 and 828. By forming a uniform plasma (P) in the reaction space through a uniform electromagnetic field to be deposited on the substrate (S) a deposition material by the plasma (P) action.

The plasma processing apparatus and the plasma processing method according to the third embodiment of the present invention as described above are formed in the cylinder module 820 in accordance with the lifting and lowering of the first power supply rod 110 according to the driving of the antenna flow module 370. By changing the capacitances of the first and second capacitors C1 and C2, the impedance between the inner antenna unit 210 and the outer antenna unit 230 is changed, so that the inner antenna unit 210 and the outer antenna unit 230 are changed. The density of the plasma P formed on the center region and the edge (or edge) region of the substrate S by controlling the loss of the high frequency power therebetween, thereby adjusting the high frequency power and impedance applied to the plasma P. Can be made uniform.

Meanwhile, the plasma processing apparatus 800 according to the third embodiment of the present invention may further include an antenna swing module 380 as shown in FIG. 11, and as described above, the antenna swing By swinging the feed ring 120 of the inner antenna unit 210 through the module 380, the electromagnetic field formed by the inner antenna unit 210 is precisely controlled, and the plasma is formed on the entire area of the substrate S. The density can be controlled more evenly.

20 is a diagram schematically illustrating a plasma processing apparatus according to a fourth embodiment of the present invention, and FIG. 21 is an enlarged view of a portion B of FIG. 20.

20 and 21, the plasma processing apparatus 900 according to the fourth embodiment of the present invention may include a chamber 310, a chamber lead 320, a substrate support unit 330, and an inner antenna unit 210. Antenna flow module 370 for flowing the antenna module 840 including the cylinder module 820 and the outer antenna unit 230, the high frequency power supply unit 350, the impedance matching unit 360, and the inner antenna unit 210. , And an impedance control module 990 for controlling the impedances of the inner antenna unit 210 and the outer antenna unit 230 by flowing the outer antenna unit 230. Plasma processing apparatus 900 according to the fourth embodiment of the present invention having such a configuration is configured to include the impedance control module 990, except that the plasma processing apparatus according to the third embodiment of the present invention described above ( Since it is the same as the method 800, duplicate description of the same components will be omitted.

The impedance control module 990 lifts and lowers the inner cylinder 821 of the cylinder module 820 constituting the antenna module 840 to control the impedance of the inner antenna 210 and the outer antenna 230 to control the inner antenna. By controlling the amount of current flowing through each of the 210 and the outer antenna 230, the uniformity of the plasma density is improved. To this end, the impedance control module 990 includes a lifting shaft 992, a drive motor 994, and an shaft lifting member 996.

The lifting shaft 992 penetrates through the second hollow portion 825h of the cylinder module 820 and is installed perpendicular to the inner cylinder 821 to support the inner cylinder 821.

The drive motor 994 provides a rotational motion to the shaft lifting member 996. The driving motor 994 may be installed on the support plate 365 installed inside the impedance matching unit 360 or on the ground plate 846.

The shaft elevating member 996 elevates the inner cylinder 821 by elevating the elevating shaft 992 by converting the linear motion from the rotational motion provided from the drive motor 994. For example, the shaft lifting member 996 may be formed of a rack gear and a pinion gear. At this time, the rack gear is made of an insulating material, for example, a ceramic material is installed on the lifting shaft 992. The pinion gear then linearly moves the rack gear by rotating in conjunction with rotation of the drive motor 994.

On the other hand, the second power supply rod 828 installed on one side of the inner cylinder 821 is connected to the power supply line 352 or the power divider 229 through a flexible cable 358 made of a flexible material. In addition, each of the branch bars 231a, 231b, 231c, and 231d of the outer antenna unit 230 is also made of a flexible material and is bent as the inner cylinder 821 moves up and down.

As described above, the impedance control module 990, as shown in FIG. 22, moves the lifting shaft 992 up and down to raise and lower the inner cylinder 821 according to the driving of the driving motor 992. ) And the impedance of the outer antenna unit 230 is controlled.

Specifically, the cylinder module 840, as shown in FIG. 19, has a first capacitor C1 formed between the first power supply rod 110 and the inner cylinder 821 by the first insulator 823. And a second capacitor C2 formed between the first power supply rod 110 and the outer cylinder 825 by the second insulator 827. Accordingly, the impedance control module 990 moves the inner cylinder 821 in accordance with the lifting and lowering of the lifting shaft 992 to change the capacitance of each of the first and second capacitors C1 and C2. The impedance of each of the 210 and the outer antenna unit 230 is changed, and the plasma is uniformly controlled by controlling the current flowing through each of the inner and outer antenna units 210 and 230.

The plasma processing method using the plasma processing apparatus 900 according to the fourth embodiment of the present invention including the impedance control module 990 described above is as follows.

First, the substrate S is loaded on the substrate support means 320, and the substrate S loaded on the substrate support means 320 is applied to the substrate support means 320 by applying a chucking voltage to the substrate support means 320. Fix it by electrostatic adsorption.

Thereafter, each of the antenna flow module 370 and the impedance control module 990 is individually driven to flow the antenna module 840 to adjust the distance between the antenna module 840 and the chamber lid 320. In detail, the antenna flow module 370 drives the power supply ring 120 in accordance with the lifting and lowering of the first power supply rod 110, and / or the impedance control module 990 to drive the inner cylinder 821. By raising and lowering, the capacitances of the first and second capacitors C1 and C2 formed in the cylinder module 820 and the position of the feed ring 120 positioned on the chamber lid 320 are optimized for the plasma process to be performed. .

Then, the process gas is injected into the reaction space of the chamber 310 and formed by the inner and outer antenna parts 210 and 230 by applying high frequency power to the first and second power supply rods 110 and 828. By forming a uniform plasma (P) in the reaction space through a uniform electromagnetic field to be deposited on the substrate (S) a deposition material by the plasma (P) action.

As described above, in the plasma processing apparatus and the plasma processing method according to the fourth embodiment of the present invention, first and second capacitors are formed in the cylinder module 820 by elevating the inner cylinder 821 of the cylinder module 820. By changing the capacitance of C1 and C2, the impedance between the inner antenna portion 210 and the outer antenna portion 230 is changed to reduce the loss of high frequency power between the inner antenna portion 210 and the outer antenna portion 230. The density of the plasma P formed on the center region and the edge (or edge) region of the substrate S is controlled by adjusting the high frequency power and impedance applied to the plasma P. In addition, in the plasma processing apparatus and the plasma processing method according to the fourth embodiment of the present invention, the power supply of the inner antenna unit 210 is driven by the lifting and lowering of the first power supply rod 110 according to the driving of the antenna flow module 370. By adjusting the height of the ring 120, the density of the plasma P formed on the center region and the edge (or edge) region of the substrate S may be more uniform.

Meanwhile, the plasma processing apparatus 900 according to the fourth embodiment of the present invention may further include an antenna swing module 470, as shown in FIG. 17. As described above, the antenna swing By swinging the feed ring 120 of the inner antenna unit 210 through the module 470, the electromagnetic field formed by the inner antenna unit 210 is precisely controlled, and the plasma formed on the entire area of the substrate S is controlled. The density can be made even more uniform.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

110: first power supply rod 120: feed ring
130: ground ring 142, 144, 146, 148: antenna ribbon
150: shield member 210: inner antenna portion
220: coaxial cylinder 230: outer antenna portion
310: chamber 320: chamber lid
330: substrate support means 340: antenna module
344: antenna 346: ground plate
350: high frequency power supply unit 360: impedance matching unit
370: antenna flow module 380: antenna swing module

Claims (25)

A chamber having a reaction space to which a process gas is supplied;
A chamber lid made of an insulating material to cover the top of the chamber;
Substrate supporting means installed in the chamber to face the chamber lid;
A first power supply rod disposed above the chamber lid and supplied with a high frequency power, a feed ring electrically coupled with the first power supply rod, and a high frequency power connected to the feed ring and distributed by the feed ring; An antenna module comprising a plurality of antenna ribbons;
An antenna flow module for elevating the antenna module; And
And an antenna swing module configured to repeatedly forward and reverse rotate the first power supply rod such that the feed ring swings forward and reverse by less than one rotation. Device. delete The method of claim 1,
And the antenna flow module is configured to elevate the feed ring by elevating the first power supply rod. The method of claim 1,
The antenna module is configured to further include an electrically grounded ground ring formed to surround the feed ring,
And each of the plurality of antenna ribbons is connected in a curved or spiral form between the feed ring and the ground ring. A chamber having a reaction space to which a process gas is supplied;
A chamber lid made of an insulating material to cover the top of the chamber;
Substrate supporting means installed in the chamber to face the chamber lid;
A power supply ring disposed on the chamber lid and having an inner antenna portion and an outer antenna portion to supply high frequency power, wherein the inner antenna portion is electrically coupled with the first power supply rod and the first power supply rod; And a plurality of antenna ribbons connected to the feed ring and supplied with a high frequency power distributed by the feed ring.
An antenna flow module for elevating the inner antenna; And
And an antenna swing module configured to repeatedly forward and reverse rotate the first power supply rod such that the feed ring swings forward and reverse by less than one rotation. Device. delete The method of claim 5, wherein
The inner antenna unit,
It is further configured to include an electrically grounded ground ring formed to surround the feed ring,
And each of the plurality of antenna ribbons is connected in a curved or spiral form between the feed ring and the ground ring. The method of claim 5, wherein
And the antenna flow module is configured to elevate the feed ring by elevating the first power supply rod. The method of claim 5, wherein
The antenna module has a hollow portion through which the first power supply rod penetrates and is electrically connected to a second power supply rod to which the high frequency power is supplied to electrically connect the second power supply rod to the outer antenna unit. Plasma processing apparatus further comprises a. The method of claim 9,
And a power divider electrically connected to the second power supply rod for distributing high frequency power supplied to each of the first and second power supply rods. The method of claim 9,
The outer antenna unit,
A plurality of branch bars electrically coupled to the coaxial cylinder;
A plurality of outer antennas electrically connected to each of the plurality of branch bars and arranged to surround the inner antenna part; And
And a plurality of outer ground rods installed at the ends of each of the plurality of outer antennas to electrically ground the ends of each of the plurality of outer antennas. The method of claim 5, wherein
The antenna module further comprises a cylinder module for supplying the high frequency power to the outer antenna portion,
The cylinder module,
An inner cylinder electrically coupled to the outer antenna portion having a first hollow portion through which the first power supply rod is movable;
A second power supply rod installed in the inner cylinder and supplied with the high frequency power;
A first insulator electrically insulating the first power supply rod and the inner cylinder;
An outer cylinder formed to have a second hollow portion into which the inner cylinder is inserted and electrically grounded; And
And a second insulator electrically insulating said first power supply rod and said outer cylinder. 13. The method of claim 12,
A lower surface of the outer cylinder is spaced apart from an upper surface of the inner cylinder. 13. The method of claim 12,
And an impedance control module for elevating the inner cylinder in the second hollow portion. 15. The method of claim 14,
The impedance control module,
A lifting shaft installed perpendicular to the inner cylinder; And
And an axis elevating member for elevating the elevating shaft by converting a rotational movement of a drive motor into a linear movement. 15. The method of claim 14,
The outer antenna unit,
A plurality of branch bars electrically coupled to the inner cylinder and bent as the inner cylinder moves up and down;
A plurality of outer antennas electrically connected to each of the plurality of branch bars and arranged to surround the inner antenna part; And
And a plurality of outer ground rods installed at the ends of each of the plurality of outer antennas to electrically ground the ends of each of the plurality of outer antennas. The method according to claim 11 or 16,
Each of the plurality of outer antennas,
A first antenna member positioned at a reference height and connected to the branch bar;
A second antenna member connected to the first antenna member and positioned at a height lower than the reference height; And
And a third antenna member connected to the second antenna member and the outer ground rod and positioned at the reference height.
And the first and third antenna members of each of the plurality of outer antennas are positioned above the second antenna member so as to overlap the second antenna member of each of the plurality of adjacent outer antennas. The method according to any one of claims 1, 4, 5, and 7,
And each of the plurality of antenna ribbons has a rectangular cross section erected vertically to face the chamber lid. The method according to any one of claims 1, 4, 5, and 7,
The antenna flow module,
Drive member; And
And a motion conversion member configured to convert the drive of the drive member into linear motion to lift the first power supply rod. The method according to claim 4 or 7,
The feed ring is elevated according to the elevation of the first power supply rod according to the driving of the antenna flow module to have an inclination of ± 45 degrees or less from the ground ring, or a height difference in the range of ± 100 mm from the ground ring. A plasma processing apparatus characterized by the above-mentioned. delete The method according to claim 4 or 7,
And a shield member electrically connected to the ground ring or disposed on the chamber lid. 23. The method of claim 22,
And the shield member includes a plurality of bridges overlapping each of the feed ring, the ground ring, and the plurality of antenna ribbons. The method according to any one of claims 1, 3, 4, 5, 7, and 8,
And said feed ring has a height greater than a thickness and said thickness has a range of 0.1 mm to 30 mm. 6. The method according to claim 1 or 5,
The chamber lid is formed in the shape of a dome (Dome) plasma processing apparatus.

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