KR101263310B1 - Optical receiver and method of forming the same - Google Patents

Optical receiver and method of forming the same Download PDF

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KR101263310B1
KR101263310B1 KR1020090026352A KR20090026352A KR101263310B1 KR 101263310 B1 KR101263310 B1 KR 101263310B1 KR 1020090026352 A KR1020090026352 A KR 1020090026352A KR 20090026352 A KR20090026352 A KR 20090026352A KR 101263310 B1 KR101263310 B1 KR 101263310B1
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layer
type
forming
substrate
photodetector
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KR1020090026352A
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KR20100066280A (en
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정영준
남은수
심재식
권용환
민봉기
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한국전자통신연구원
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
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  • Engineering & Computer Science (AREA)
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Abstract

An optical receiver and a method of forming the same are provided. The photoreceiver includes a lens integrated on the back side of the substrate, a photodetector on the front side of the substrate and a heterojunction bipolar transistor on the front side of the substrate, wherein the lens collects and transmits the incident optical signal to the photodetector.

Figure R1020090026352

Photoreceiver, photodetector, lens

Description

Optical receiver and its formation method {OPTICAL RECEIVER AND METHOD OF FORMING THE SAME}

The present invention relates to an optical receiver and a method of forming the same, and more particularly, to an optical receiver having a photodetector and a heterojunction bipolar transistor, and a method of forming the same.

Photodetectors are devices that use an internal photoelectric effect, a method in which injected photons produce electrons and holes, which are free charge carriers in a semiconductor. For example, such devices include pn junction photodiodes, positive intrinsic negative (PIN) photodiodes, and avalanche photodiodes.

The optical receiver mainly used in the laser radar system may have a structure in which a PIN photodiode and a heterojunction bipolar transistor are integrated. However, the photodetector of such a photoreceptor is not easy to control the electric field across the In (0.53) Ga (0.47) As layer with a very small band gap to absorb light. As a result, leakage current due to tunneling may be generated, thereby limiting the size of the applied electric field. In addition, since the amount of light incident on the surface of the photodetector is limited, the light in the region beyond the surface of the photodetector is lost due to a loss, thereby limiting the external quantum efficiency.

The PIN photodiode has a disadvantage in that it is difficult to fabricate an optical receiver integrated with an optical detector having excellent reception sensitivity because the PIN photodiode cannot have a gain in the electrical conversion of the optical signal.

An object of the present invention is to provide an optical receiver with improved external quantum efficiency and a method of forming the same.

An optical receiver according to an embodiment of the present invention includes a lens integrated on a substrate backside, a photodetector on the front surface of the substrate, and a heterojunction bipolar transistor on the front surface of the substrate, wherein the lens collects an incident optical signal and transmits the light signal to the photodetector. do.

According to an embodiment of the present invention, the photodetector may include an amplification layer on the substrate, and an absorption layer on the amplification layer.

According to an embodiment of the present invention, the amplification layer may include a p-type InAlAs layer and an n-type InAlAs layer.

According to an embodiment of the present invention, the absorption layer may include n-type InGaAs.

The photodetector according to the embodiment of the present invention may further include an ohmic layer made of p-type InGaAsP and a current moving layer made of n-type InGaAs on the absorbing layer between the substrate and the amplification layer.

The heterojunction bipolar transistor includes a subcollector layer on the substrate and a collector layer on the subcollector layer, wherein the subcollector layer is made of the same material as the absorber layer, and the collector layer is made of the same material as the current transfer layer. Can be configured.

The heterojunction bipolar transistor further includes a first dummy layer between the sub collector layer and the substrate and a second dummy layer between the first dummy layer and the sub collector layer, wherein the first dummy layer is the ohmic layer. Is made of the same material as the second dummy layer may be made of the same material as the amplification layer.

A method of forming an optical receiver according to an embodiment of the present invention is to prepare a substrate including a first region and a second region, to form a lens on the back of the substrate of the first region, the front of the substrate of the first region Forming a photodetector on the substrate, and forming a heterojunction bipolar transistor on the entire surface of the substrate in the second region.

Forming the photodetector and the heterojunction bipolar transistor comprises forming a p + type InGaAsP layer on the substrate in the first region and the second region, forming a p + type InAlAs layer on the p + type InGaAsP layer, forming an n + type InAlAs layer on the p + type InAlAs layer, forming an n + type InGaAs layer on the n + type InAlAs layer, and forming an n− type InGaAs layer on the n + type InGaAs layer Can be.

The photodetector may be formed by patterning the p + type InGaAsP layer, the p + type InAlAs layer, the n + type InAlAs layer, the n + type InGaAs layer, and the n type InGaAs layer, respectively, in the first region. The method may further include forming an ohmic layer on the p-type amplification layer on the ohmic layer, an n-type amplification layer on the p-type amplification layer, an absorption layer on the n-type amplification layer, and a current transfer layer on the absorption layer.

Forming the heterojunction bipolar transistor comprises forming a p + type InGaAs layer on the n− type InGaAs layer on the second region, forming an n− type InP layer on the p + type InGaAs layer, and The method may further include forming an n + type InGaAs layer on the n− type InP layer.

The heterojunction bipolar transistor may be formed by patterning the p + type InGaAsP layer in the second region to form a first dummy layer, and patterning the p + type InAlAs layer and the n + type InAlAs layer to form a p type dummy layer and n The method may further include forming a dummy layer, forming a subcollector layer by patterning the n + type InGaAs layer, and forming a collector layer by patterning the n− type InGaAs layer.

Forming the heterojunction bipolar transistor includes forming a base layer by patterning a p + type InGaAs layer on the collector layer on the second region, and forming an emitter layer by patterning an n-type InP layer on the base layer. And an n + type InGaAs layer formed on the emitter layer to form an emitter ohmic layer.

According to an embodiment of the present invention, an optical receiver integrated with a photodetector and a heterojunction bipolar transistor has a lens for condensing an optical signal. By the lens, the external quantum efficiency of the optical receiver can be improved. In addition, the amplifying layer and the absorbing layer of the photodetector can be separated, thereby enabling the propagation of the photocurrent, and reducing the leakage current. By transmitting the photocurrent generated from the photodetector to the base electrode, the photoreceiver may have a high amplification characteristic.

On the other hand, according to the embodiment of the present invention, since the photodetector and the heterojunction bipolar transistor of the optical receiver are formed at the same time, the manufacturing process can be simplified.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

Although the terms first, second, and so forth in the embodiments of the present invention have been described in order to describe each constituent element, each constituent element should not be limited by such terms. These terms are only used to distinguish certain components from other components.

In the drawings, each component may be exaggerated for clarity. The same reference numerals denote the same elements throughout the specification.

Meanwhile, for the sake of simplicity, some embodiments to which the technical spirit of the present invention may be applied are described as examples, and descriptions of various modified embodiments will be omitted. However, one of ordinary skill in the art may apply the inventive concept of the present invention to various cases based on the above description and the embodiments to be illustrated.

1 is a view illustrating a photodetector integrated with a photodetector and a heterojunction bipolar transistor according to an embodiment of the present invention.

Referring to FIG. 1, the lens 50 is integrated on the back surface of the substrate 10. The photodetector 100 and the heterojunction bipolar transistor 200 are disposed on the entire surface of the substrate 10. The lens 50 collects the incident light signal S and transmits the light signal S to the photodetector 100. By the lens 50, it is possible to focus the light in the area outside the surface of the photodetector 100 to improve the external quantum efficiency.

The photodetector 100 may include an amplification layer 120 on the substrate 10 and an absorption layer 130 on the amplification layer 120. The amplification layer 120 may have a form in which a p-type InAlAs layer 122 and an n-type InAlAs layer 124 are pn bonded. The absorption layer 130 may be composed of an n-type InGaAs layer. The absorption layer 130 may function to generate an electric charge by absorbing an optical signal incident through the lens 50. The amplification layer 120 may multiply charges generated in the absorbing layer 130. That is, the photodetector 100 may have a structure in which the amplification layer 120 and the absorption layer 130 are separated.

The optical signal S collected by the lens 50 passes through the amplification layer 120 having a relatively wide band gap to reach the absorbing layer 130. The amplification layer 120 may be used as an opening through which the optical signal S is projected when the amplification layer 120 has a wider band gap than the absorption layer 130. When the absorption layer 130 is formed of an InGaAs layer, the InGaAs layer may have a band gap of about 0.75 eV and be sensitive to a wavelength of 1.55 μm. When the absorber layer 130 is composed of InGaAs layers and the amplification layer 120 is composed of InAlAs layers, the InGaAs layer and the InAlAs layer may have excellent lattice matching.

The substrate 10 may be an InP substrate. An ohmic layer 110 for forming an ohmic electrode between the substrate 10 and the amplification layer 120 is disposed. The ohmic layer 110 may be a p + InGaAsP layer. The n-type electrode 115 may be disposed on the ohmic layer 110. The current moving layer 140 for high speed current movement is disposed on the absorption layer 130. The current moving layer 140 may be an n-InGaAs layer. The p-type electrode 150 may be disposed on the current moving layer 140. The p-type electrode 150 and the n-type electrode 115 may each include any one of titanium (Ti), platinum (Pt), and gold (Au).

The absorption layer 130 is composed of an InGaAs layer having a relatively small band gap, so that the electric field cannot be easily adjusted. According to the exemplary embodiment of the present invention, the amplification layer 120 is formed to reduce the leakage current by reducing the strength of the electric field applied to the absorption layer 130.

The heterojunction bipolar transistor 200 includes a sub collector layer 230 on the substrate 10, a collector layer 240 on the sub collector layer 230, a base layer 250 on the collector layer 240, An emitter layer 260 on the base layer 250. The sub-collector layer 230 may be formed of the same material as the absorber layer 130, for example, an n + InGaAs layer. The collector layer 240 may be formed of the same material as the current moving layer 140, for example, an n-InGaAs layer. The base layer 250 may be composed of a p + InGaAs layer, and the emitter layer 260 may be composed of an n-InP layer.

An emitter ohmic layer 270 is disposed on the emitter layer 260, and an emitter electrode 275 is disposed on the emitter ohmic layer 270. The emitter ohmic layer 270 may be composed of an n + InGaAs layer. The base electrode 255 may be disposed on the upper surface of the base layer 250, and the collector electrode 235 may be disposed on the upper surface of the sub collector layer 230. The base electrode 255, the collector electrode 235, and the emitter electrode 275 may each include any one of titanium (Ti), platinum (Pt), and gold (Au).

The first dummy layer 210 may be disposed between the sub collector layer 230 and the substrate 10. The first dummy layer 210 may be made of the same material as the ohmic layer 110. The second dummy layer 220 may be disposed between the first dummy layer 210 and the sub collector layer 230. The second dummy layer 220 may be made of the same material as the amplification layer 120. That is, the second dummy layer 220 may include a p-type InAlAs layer 222 and an n-type InAlAs layer 224.

The photocurrent generated by the photodetector 100 may be injected into the base layer 250 and amplified by the heterojunction bipolar transistor 200. To this end, the p-type electrode 150 of the photodetector 100 and the base electrode 255 of the heterojunction bipolar transistor 200 may be electrically connected. Accordingly, the photoreceptor in which the photodetector 100 and the heterojunction bipolar transistor 200 are integrated may have a high amplification characteristic. In addition, since the optical fiber aligned with the optical receiver is mounted on the rear surface of the planar substrate 10, the optical fiber and the photodetector 100 may be easily aligned. The passivation layer 190 for surface protection and electrical connection between the photodetector 100 and the heterojunction bipolar transistor 200 is disposed. The passivation layer 190 may include a polymer and may include a p-type electrode 150, an n-type electrode 115, a base electrode 255, an emitter electrode 275, and a collector electrode for electrical connection. At least a portion of 235.

According to the exemplary embodiment of the present invention, the lens 50 is provided on the rear surface of the substrate 10 to improve external quantum efficiency. In addition, the photodetector 100 has a structure in which the amplification layer 120 and the absorption layer 130 are separated, thereby minimizing leakage current. By transmitting the photocurrent generated from the photodetector 100 to the base electrode 255, the photoreceiver may have a high amplification characteristic.

2A to 2D are views for explaining a method of forming an optical receiver according to an embodiment of the present invention.

Referring to FIG. 2A, a substrate 300 including a first region A and a second region B, in which a lens 305 is integrated in the first region A, is prepared. The lens 305 may be formed of the same material as the substrate 300. The lens 305 and the substrate 300 may be formed of InP. The lens 305 may condense an optical signal to improve external quantum efficiency. The p + type InGaAsP layer 310 is sequentially formed on the substrate 300 of the first region A and the second region B, and the p + type InAlAs layer 320 is formed on the p + type InGaAsP layer 310. Form an n + type InAlAs layer 330 on the p + type InAlAs layer 320, form an n + type InGaAs layer 340 on the n + type InAlAs layer 330, and form the n + type InGaAs An n-type InGaAs layer 350 is formed on layer 340. Subsequently, a p + type InGaAs layer 360 is formed on the n− type InGaAs layer 350, and an n− type InP layer 370 is formed on the p + type InGaAs layer 360. An n + type InGaAs layer 380 is formed on the InP layer 370.

The p + type InGaAsP layer 310, p + type InAlAs layer 320, n + type InAlAs layer 330, n + type InGaAs layer 340, n− type InGaAs layer 350, p + type InGaAs layer 360, The n-type InP layer 370 and the n + type InGaAs layer 380 may be formed by metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition).

Referring to FIG. 2B, the photodetector 400 is formed on the substrate 300 of the first region A. Referring to FIG. The photodetector 400 may be formed by patterning a p + type InGaAsP layer 310 on the first region A to form an ohmic layer 410, and forming a p + type InAlAs layer 320 and an n + type InAlAs layer ( Pattern 330 to form a p-type amplification layer 422 and an n-type amplification layer 424, pattern the n + type InGaAs layer 340 to form an absorption layer 430, and n-type InGaAs layer 350 ) May be formed to form the current moving layer 440. An n-type electrode 415 is formed on the exposed upper surface of the ohmic layer 410, and a p-type electrode 450 is formed on the current moving layer 440. The n-type electrode 415 and the p-type electrode 450 may be formed by a lift-off process. The n-type electrode 415 and the p-type electrode 450 may be formed of any one of titanium (Ti), platinum (Pt), or gold (Au).

Referring to FIG. 2C, a heterojunction bipolar transistor 500 is formed on the substrate of the second region B. Referring to FIG. The p + type InGaAsP layer 310 of the second region B is patterned to form a first dummy layer 510, and the p + type InAlAs layer 320 and the n + type InAlAs layer 330 are patterned. The p-type dummy layer 522 and the n-type dummy layer 524 are formed, the n + type InGaAs layer 340 is patterned to form a sub-collector layer 530, and the n-type InGaAs layer 350 is formed. Patterning to form the collector layer 540.

Subsequently, a p + type InGaAs layer 360 is patterned on the collector layer 540 in the second region B to form a base layer 560, and an n− type InP layer on the base layer 560. An emitter layer 570 is formed by patterning 370, and an n + type InGaAs layer 380 is patterned on the emitter layer 570 to form an emitter ohmic layer 570.

An emitter electrode 575 is formed on the emitter ohmic layer 570, a base electrode 555 is formed on the base layer 550, and a collector electrode is formed on the sub collector layer 530. 535. The emitter electrode 575, the base electrode 555, and the collector electrode 535 may be simultaneously formed in a lift-off process. The base electrode 555 and the collector electrode 535 may be formed of any one of titanium (Ti), platinum (Pt), and gold (Au).

A passivation layer 490 is formed for surface protection and electrical connection between the photodetector 400 and the heterojunction bipolar transistor 400. The passivation layer 490 may be formed of a polymer, and may have a p-type electrode 450, an n-type electrode 415, a base electrode 555, an emitter electrode 575, and a collector electrode for electrical connection. 535 may be formed to expose at least a portion.

According to the exemplary embodiment of the present invention, the photodetector 400 and the heterojunction bipolar transistor 500 may be formed using a single organometallic vapor phase growth method. Therefore, the manufacturing process of the photoreceiver may have an advantage that the process is simplified since multiple crystal growths are unnecessary.

1 is a view illustrating a photodetector integrated with a photodetector and a heterojunction bipolar transistor according to an embodiment of the present invention.

2A to 2D are views for explaining a method of forming an optical receiver according to an embodiment of the present invention.

Claims (13)

An integrated lens on the back of the substrate; A photodetector on the front surface of the substrate; And A heterojunction bipolar transistor on the front of the substrate, The photodetector includes an amplification layer on the substrate and an absorption layer on the amplification layer, The photodetector is: An ohmic layer composed of p-type InGaAsP between the substrate and the amplification layer; And Further comprising a current moving layer composed of n-type InGaAs on the absorption layer, The heterojunction bipolar transistor is: A sub collect layer on the substrate; A first dummy layer between the sub collector layer and the substrate; A second dummy layer between the first dummy layer and the sub collector layer; And Including a collector layer on the sub-collector layer, The sub collector layer is made of the same material as the absorber layer, and the collector layer is made of the same material as the current moving layer, The first dummy layer is made of the same material as the ohmic layer, the second dummy layer is made of the same material as the amplification layer, The lens receives an optical signal incident to the optical receiver for transmitting to the photodetector. delete The method according to claim 1, The amplifying layer includes a p-type InAlAs layer and an n-type InAlAs layer. The method according to claim 1, The absorption layer includes an n-type InGaAs. delete delete delete Preparing a substrate comprising a first region and a second region; Forming a lens on a rear surface of the substrate in the first region; Forming a photodetector on the entire surface of the substrate in the first region; And Forming a heterojunction bipolar transistor on the entire surface of the substrate of the second region, Forming the photodetector and heterojunction bipolar transistor is: Forming a p + type InGaAsP layer on the substrate in the first region and the second region; Forming a p + type InAlAs layer on the p + type InGaAsP layer; Forming an n + type InAlAs layer on the p + type InAlAs layer; Forming an n + type InGaAs layer on the n + type InAlAs layer; And Forming an n-type InGaAs layer on the n + type InGaAs layer. delete The method of claim 8, Forming the photodetector, The p + type InGaAsP layer, the p + type InAlAs layer, the n + type InAlAs layer, the n + type InGaAs layer, and the n type InGaAs layer in the first region are respectively patterned to form an ohmic layer and an ohmic layer on the substrate. And forming a p-type amplification layer on the p-type amplification layer, an n-type amplification layer on the p-type amplification layer, an absorption layer on the n-type amplification layer, and a current transfer layer on the absorption layer. The method of claim 8, Forming the heterojunction bipolar transistor Forming a p + type InGaAs layer on the n− type InGaAs layer in the second region; Forming an n-type InP layer on the p + type InGaAs layer; And And forming an n + type InGaAs layer on the n− type InP layer. The method of claim 11, Forming the heterojunction bipolar transistor Patterning the p + type InGaAsP layer to form a first dummy layer, and patterning the p + type InAlAs layer and the n + type InAlAs layer to form ap type dummy layer and an n type dummy layer, respectively, and forming the n + type InGaAs layer. And forming a collector layer by patterning the sub-collector layer and patterning the n-type InGaAs layer. The method of claim 12, Forming the heterojunction bipolar transistor Patterning a p + type InGaAs layer on the collector layer to form a base layer; Patterning an n-type InP layer on the base layer to form an emitter layer; And And forming an emitter ohmic layer by patterning an n + type InGaAs layer on the emitter layer.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100517165B1 (en) 2001-09-06 2005-09-26 스미토모덴키고교가부시키가이샤 Znmgsse system pin photodiode and znmgsse system avalanche photodiode
JP2006295216A (en) 1995-02-02 2006-10-26 Sumitomo Electric Ind Ltd Pin type light-receiving device, and method of manufacturing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006295216A (en) 1995-02-02 2006-10-26 Sumitomo Electric Ind Ltd Pin type light-receiving device, and method of manufacturing same
KR100517165B1 (en) 2001-09-06 2005-09-26 스미토모덴키고교가부시키가이샤 Znmgsse system pin photodiode and znmgsse system avalanche photodiode

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