KR101262455B1 - 태양광 발전장치 및 이의 제조방법 - Google Patents

태양광 발전장치 및 이의 제조방법 Download PDF

Info

Publication number
KR101262455B1
KR101262455B1 KR1020100089133A KR20100089133A KR101262455B1 KR 101262455 B1 KR101262455 B1 KR 101262455B1 KR 1020100089133 A KR1020100089133 A KR 1020100089133A KR 20100089133 A KR20100089133 A KR 20100089133A KR 101262455 B1 KR101262455 B1 KR 101262455B1
Authority
KR
South Korea
Prior art keywords
layer
holes
light absorbing
absorbing layer
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020100089133A
Other languages
English (en)
Korean (ko)
Other versions
KR20120026925A (ko
Inventor
이진우
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020100089133A priority Critical patent/KR101262455B1/ko
Priority to CN2011800412097A priority patent/CN103081123A/zh
Priority to PCT/KR2011/003120 priority patent/WO2012033274A1/ko
Priority to JP2013528101A priority patent/JP2013537364A/ja
Priority to US13/639,704 priority patent/US9818897B2/en
Priority to EP11823707A priority patent/EP2538454A1/en
Publication of KR20120026925A publication Critical patent/KR20120026925A/ko
Application granted granted Critical
Publication of KR101262455B1 publication Critical patent/KR101262455B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H10F77/1699Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
KR1020100089133A 2010-09-10 2010-09-10 태양광 발전장치 및 이의 제조방법 Expired - Fee Related KR101262455B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020100089133A KR101262455B1 (ko) 2010-09-10 2010-09-10 태양광 발전장치 및 이의 제조방법
CN2011800412097A CN103081123A (zh) 2010-09-10 2011-04-27 用于太阳能发电的装置及其制造方法
PCT/KR2011/003120 WO2012033274A1 (ko) 2010-09-10 2011-04-27 태양광 발전장치 및 이의 제조방법
JP2013528101A JP2013537364A (ja) 2010-09-10 2011-04-27 太陽光発電装置及びその製造方法
US13/639,704 US9818897B2 (en) 2010-09-10 2011-04-27 Device for generating solar power and method for manufacturing same
EP11823707A EP2538454A1 (en) 2010-09-10 2011-04-27 Device for generating solar power and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100089133A KR101262455B1 (ko) 2010-09-10 2010-09-10 태양광 발전장치 및 이의 제조방법

Publications (2)

Publication Number Publication Date
KR20120026925A KR20120026925A (ko) 2012-03-20
KR101262455B1 true KR101262455B1 (ko) 2013-05-08

Family

ID=45810845

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100089133A Expired - Fee Related KR101262455B1 (ko) 2010-09-10 2010-09-10 태양광 발전장치 및 이의 제조방법

Country Status (6)

Country Link
US (1) US9818897B2 (https=)
EP (1) EP2538454A1 (https=)
JP (1) JP2013537364A (https=)
KR (1) KR101262455B1 (https=)
CN (1) CN103081123A (https=)
WO (1) WO2012033274A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090293955A1 (en) * 2007-11-07 2009-12-03 Qualcomm Incorporated Photovoltaics with interferometric masks
US20100096006A1 (en) * 2008-10-16 2010-04-22 Qualcomm Mems Technologies, Inc. Monolithic imod color enhanced photovoltaic cell
KR20140142416A (ko) * 2013-06-03 2014-12-12 삼성에스디아이 주식회사 태양 전지 및 이의 제조 방법
KR102042026B1 (ko) * 2013-06-20 2019-11-27 엘지이노텍 주식회사 태양전지
KR20150041929A (ko) * 2013-10-10 2015-04-20 엘지이노텍 주식회사 태양광 발전장치
NL2014040B1 (en) * 2014-12-23 2016-10-12 Stichting Energieonderzoek Centrum Nederland Method of making a curent collecting grid for solar cells.
CN108183088B (zh) * 2017-12-27 2020-06-12 武汉华星光电技术有限公司 一种膜层套孔及阵列基板制备方法
JP2022085070A (ja) * 2020-11-27 2022-06-08 株式会社リコー 光電変換モジュール、電子機器、及び電源モジュール

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009150654A2 (en) 2008-06-12 2009-12-17 Yissum Research Development Company Solar volumetric structure

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5538902A (en) * 1993-06-29 1996-07-23 Sanyo Electric Co., Ltd. Method of fabricating a photovoltaic device having a three-dimensional shape
EP1061589A3 (en) * 1999-06-14 2008-08-06 Kaneka Corporation Method of fabricating thin-film photovoltaic module
US20050056312A1 (en) * 2003-03-14 2005-03-17 Young David L. Bifacial structure for tandem solar cells
US20070193622A1 (en) 2004-03-31 2007-08-23 Hironobu Sai Laminate Type Thin-Film Solar Cell And Method For Manufacturing The Same
JP4695850B2 (ja) * 2004-04-28 2011-06-08 本田技研工業株式会社 カルコパイライト型太陽電池
US20060036230A1 (en) 2004-08-13 2006-02-16 Mills Michael W Shaped frontal patch
US7235736B1 (en) * 2006-03-18 2007-06-26 Solyndra, Inc. Monolithic integration of cylindrical solar cells
JP4909032B2 (ja) * 2006-11-30 2012-04-04 三洋電機株式会社 太陽電池モジュール
US20090084425A1 (en) * 2007-09-28 2009-04-02 Erel Milshtein Scribing Methods for Photovoltaic Modules Including a Mechanical Scribe
JP2009135337A (ja) * 2007-11-30 2009-06-18 Showa Shell Sekiyu Kk Cis系太陽電池の積層構造、cis系薄膜太陽電池の集積構造及び製造方法
KR101460580B1 (ko) * 2008-02-20 2014-11-12 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
KR20100030944A (ko) * 2008-09-11 2010-03-19 엘지이노텍 주식회사 태양전지의 제조방법
WO2010044738A1 (en) * 2008-10-13 2010-04-22 Solibro Research Ab A method for manufacturing a thin film solar cell module
JP2010177463A (ja) * 2009-01-29 2010-08-12 Mitsubishi Electric Corp 薄膜太陽電池およびその製造方法並びに溝形成装置
KR101533244B1 (ko) * 2009-04-10 2015-07-03 주성엔지니어링(주) 박막형 태양전지의 제조방법 및 제조장치
KR101081095B1 (ko) 2009-06-30 2011-11-07 엘지이노텍 주식회사 태양전지 및 이의 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009150654A2 (en) 2008-06-12 2009-12-17 Yissum Research Development Company Solar volumetric structure

Also Published As

Publication number Publication date
US9818897B2 (en) 2017-11-14
WO2012033274A1 (ko) 2012-03-15
CN103081123A (zh) 2013-05-01
KR20120026925A (ko) 2012-03-20
JP2013537364A (ja) 2013-09-30
EP2538454A1 (en) 2012-12-26
US20130037099A1 (en) 2013-02-14

Similar Documents

Publication Publication Date Title
KR101210168B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101262455B1 (ko) 태양광 발전장치 및 이의 제조방법
KR100999797B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101382880B1 (ko) 태양광 발전장치 및 이의 제조방법
KR20130109330A (ko) 태양전지 및 이의 제조 방법
KR20120012325A (ko) 태양광 발전장치 및 이의 제조방법
KR20120029281A (ko) 태양광 발전장치 및 이의 제조방법
KR101114079B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101272997B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101172186B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101349429B1 (ko) 태양광 발전장치
KR101172178B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101055019B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101144447B1 (ko) 태양광 발전장치 및 이의 제조방법
KR20130136739A (ko) 태양전지 및 이의 제조방법
KR20120086447A (ko) 태양전지 및 이의 제조방법
KR101172190B1 (ko) 태양광 발전장치 및 이의 제조방법
KR20130070464A (ko) 태양광 발전장치 및 이의 제조방법
KR101306525B1 (ko) 태양전지 모듈 및 이의 제조방법
KR101273015B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101210104B1 (ko) 태양광 발전장치
KR101306436B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101349432B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101081222B1 (ko) 태양광 발전장치
KR101154597B1 (ko) 태양광 발전장치

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20170405

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180503

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180503

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000