KR101244879B1 - Anti-reflecting board and manufacturing method thereof - Google Patents
Anti-reflecting board and manufacturing method thereof Download PDFInfo
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- KR101244879B1 KR101244879B1 KR1020120027726A KR20120027726A KR101244879B1 KR 101244879 B1 KR101244879 B1 KR 101244879B1 KR 1020120027726 A KR1020120027726 A KR 1020120027726A KR 20120027726 A KR20120027726 A KR 20120027726A KR 101244879 B1 KR101244879 B1 KR 101244879B1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
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Abstract
Description
The present invention relates to an antireflection substrate and a method of manufacturing the same.
Due to the emergence of portable electronic devices such as mobile phones, smart phones, tablet PCs, etc., which have recently increased in use, optical properties of screen protection substrates for protecting screens of portable electronic devices made of tempered glass, polymer, etc. need to be improved. There is. In addition, the need for a substrate that can directly replace the screen of the portable electronic device, rather than the screen protection substrate is also increasing.
At present, the technical requirements for the implementation of flexible devices for use in screens of portable electronic devices are widely used in displays, thin films, and organic solar cells represented by LCDs and LEDs. As a technical prerequisite for the implementation of the flexible device, the existing glass substrate must be replaced with the flexible polymer substrate. Polymer substrates are mechanically flexible and lightweight, which increases the degree of freedom of product design while requiring optical properties and chemical stability comparable to those of glass.
The improvement of light transmittance through the adjustment of the anti-reflective properties, the enhancement of the contrast, the removal of the ghost image, etc. are known as the core element technology for commercialization of the transparent polymer substrate. These elemental techniques, which cannot be fully realized with polymer-specific material properties, have been attempted through chemical and structural modifications on the surface of polymer substrates and the addition of heterogeneous coating materials.
In the related art, there is a publication 2010-0099092.
Embodiments of the present invention provide an antireflection substrate having optical properties improved by improving light transmittance by preventing reflection of light through pretreatment of the base substrate surface.
According to an aspect of the invention, preparing a base substrate capable of transmitting light; Forming a plurality of protrusion structures on the surface of the base substrate using a dry etching method, and forming an anti-reflection structure that can prevent reflection of light on each of the plurality of protrusion structures by deposition of inorganic particles, A method of manufacturing an antireflective substrate is provided that includes forming an antireflective layer on a substrate surface.
In the forming of the plurality of protrusion structures, the plurality of protrusion structures may be formed on the surface of the base substrate by using a plasma dry etching method.
In the forming of the anti-reflection layer, the inorganic particles may be deposited by plasma thin film formation to form an anti-reflection structure.
The antireflective structures are arranged at intervals of 200 nm or less, and the forming of the plurality of projecting structures may include adjusting the diameters and the arrangement intervals of the plurality of projecting structures so that the antireflective structures can be arranged at intervals of 200 nm or less. Controlling the etch exposure time.
Controlling the etching exposure time may make the etching exposure time less than 7 minutes.
The forming of the antireflection layer may form an antireflection layer having a single film structure formed of an antireflection structure having a uniform diameter.
In the forming of the antireflection layer, a spherical antireflection structure may be formed.
After forming the anti-reflection layer, the method may further include forming a continuous thin film layer on the surface of the anti-reflection layer.
In the forming of the continuous thin film layer, the continuous thin film layer may be formed using the same material as the inorganic particles.
The continuous thin film layer may be formed with a thickness of 5 nm or more and 100 nm or less.
The surface of the base substrate may be provided with a reinforcement coating layer.
Forming the plurality of protrusion structures by using a dry etching method may include at least one gas selected from Ar, O 2, H 2, He, and N 2.
Inorganic particles, metals (Al, Ba, Be, Ca, Cr, Cu, Cd, Dy, Ga, Ge, Hf, In, Lu, Mg, Mo, Ni, Rb, Sc, Si, Sn, Ta, Te At least one selected from oxides and nitrides of Ti, W, Zn, Zr, and Yb, and compounds of oxide-nitrides (AlON, SiON) and magnesium fluoride Can be done.
The base substrate is at least one selected from fluorine-based transparent polymer film, acrylic transparent polymer film, polyethylene terephthalate-based transparent polymer film, polycarbonate, polyethylene naphthalate, polyethersulfone, polycycloolefin, CR39, and polyurethane. It can be made, including.
According to another aspect of the present invention, a base substrate capable of transmitting light, a plurality of projection structure formed on one surface of the base substrate, a plurality of projection structure formed on the anti-reflective structure formed by the deposition of inorganic particles An antireflection substrate is provided that includes an antireflection layer formed on a surface of a base substrate.
The plurality of protrusion structures may be formed on the surface of the base substrate by using a plasma dry etching method.
The antireflection layer may be formed of an antireflection structure formed by depositing inorganic particles with a plasma thin film.
The antireflective structures may be arranged at intervals of 200 nm or less.
The antireflection layer may have a single film structure including the antireflection structure having a uniform diameter.
The antireflection structure may be formed in a spherical shape.
In this case, the method may further include a continuous thin film layer formed on the surface of the anti-reflection layer.
The continuous thin film layer may be formed using the same material as the inorganic particles.
The continuous thin film layer may be formed with a thickness of 5 nm or more and 100 nm or less.
The base substrate may be provided with a reinforcement coating layer on the surface of the base substrate.
Inorganic particles, metals (Al, Ba, Be, Ca, Cr, Cu, Cd, Dy, Ga, Ge, Hf, In, Lu, Mg, Mo, Ni, Rb, Sc, Si, Sn, Ta, Te At least one selected from oxides and nitrides of Ti, W, Zn, Zr, and Yb, and compounds of oxide-nitrides (AlON, SiON) and magnesium fluoride. Can be done.
The base substrate is at least one selected from fluorine-based transparent polymer film, acrylic transparent polymer film, polyethylene terephthalate-based transparent polymer film, polycarbonate, polyethylene naphthalate, polyethersulfone, polycycloolefin, CR39, and polyurethane. It can be made, including.
According to an embodiment of the present invention, before the step of forming the anti-reflective layer, the surface of the base substrate is pretreated using a dry etching method such as plasma, thereby facilitating the arrangement interval and size of the anti-reflective structure forming the anti-reflective layer to be formed later. Can be controlled. Therefore, the optical and physical properties of the antireflection substrate can also be easily controlled.
1 is a schematic view showing an anti-reflection substrate according to an embodiment of the present invention.
2 is a view showing the actual structure of the anti-reflective substrate according to an embodiment of the present invention.
3 is a flow chart sequentially showing a method of manufacturing an antireflective substrate according to another embodiment of the present invention.
4 to 7 are process diagrams sequentially showing a method of manufacturing an anti-reflection substrate according to another embodiment of the present invention.
8 is a view showing the transmittance of light with the dry etching treatment time of the antireflective substrate according to another embodiment of the present invention.
9 illustrates an antireflective structure arranged adjacent to each other in accordance with an embodiment of the present invention.
10 is a view showing the durability measurement results of the anti-reflective substrate according to an embodiment of the present invention.
11 is a view showing the durability measurement results according to a known antireflection substrate.
BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.
The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.
Hereinafter, embodiments of an anti-reflection substrate and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings. In the following description with reference to the accompanying drawings, the same or corresponding components are given the same reference numerals. Duplicate description thereof will be omitted.
1 is a view schematically showing an antireflective substrate according to an embodiment of the present invention, Figure 2 is a view taken with a microscope the actual state of the antireflective substrate according to an embodiment of the present invention.
FIG. 3 is a flow chart sequentially illustrating a method for manufacturing the antireflective substrate shown in FIGS. 1 and 2, according to another embodiment of the invention, and FIGS. 4 to 7 are manufactured according to the flow chart of FIG. 3. It is a process chart which shows an antireflection board in order.
According to an embodiment of the present invention, an anti-reflection substrate including a
In the preparing of the base substrate 110 (s100), as shown in FIG. 4, the
Since the
At this time, the
The reinforcement coating layer may improve physical properties such as strength and hardness of the
The polymer paint used to form the reinforcement coating layer may be a polymer paint composed of at least one of acrylic, polyurethane, epoxy, and primer paints, and in addition to the above-described effects on the
In addition, the reinforcing coating layer provided according to the present embodiment may be formed by mixing the metal oxide, sulfide, alumina, silica, zirconium oxide, iron oxide, and the like, which are inorganic fine particles, with the above-described polymer paint.
Forming the plurality of protrusion structures 120 (s200), as shown in Figure 5, unlike the conventional wet etching method using a dry etching method a plurality of protrusions on the surface of the
When the dry etching method is used, the formation of the plurality of
The dry etching method according to the present embodiment may be a plasma dry etching method.
In this case, the material used in the plasma dry etching method according to the present embodiment may include at least one of at least one gas selected from Ar, O 2 , H 2 , He, and N 2 .
According to the present exemplary embodiment, when the
In this case, the optical characteristics of the antireflection substrate provided according to the present embodiment are controlled by the antireflection layer 130 formed of the antireflection structure described in detail below, and in order to control the gap between the antireflection structures, The spacing between the plurality of
Therefore, the etching exposure time of the plurality of
In particular, in order to form the plurality of
8 is a graph illustrating a change in the anti-reflection characteristics of the anti-reflection substrate according to the time when the
As shown in FIG. 8, the optical properties of the antireflective substrate provided in accordance with the present embodiment exhibit maximum values when the plasma exposure time is about 3 minutes, and when the plasma exposure time is 7 minutes or more, the optical properties are not exposed. Optical characteristics similar to those without.
Therefore, the plasma exposure time in the forming of the plurality of
The anti-reflection layer 130 forming step (s300), as shown in Figure 6, by depositing the inorganic particles on the plurality of
The inorganic particles provided according to the present embodiment may be a metal material (Al, Ba, Be, Ca, Cr, Cu, Cd, Dy, Ga, Ge, Hf, In, Lu, Mg, Mo, Ni, Rb, Sc, From oxides and nitrides of Si, Sn, Ta, Te, Ti, W, Zn, Zr, Yb), and oxide-nitride compounds (AlON, SiON) and magnesium fluoride It may include at least one.
Accordingly, the anti-reflection layer 130 formed through the inorganic particles described above may also prevent reflection of light, thereby contributing to the improvement of light transmittance.
According to the present exemplary embodiment, the method of depositing inorganic particles may be a deposition method using plasma, similarly to forming the plurality of
When the inorganic particles are deposited by the plasma method, the inorganic particles are uniformly deposited in a valley between the plurality of
However, over time, due to the shadow effect of the plasma particles, the inorganic particles reaching the surface of the
Therefore, since the inorganic particles deposited on the plurality of
In addition, in the plasma sheath proximate to the
As a result, the reaction gas is concentrated on the plurality of protrusion structures protruding in a direction perpendicular to the surface of the
Based on the two causes described above, as shown in FIG. 6, an antireflection structure having a unit particle structure is formed on each of the plurality of
In this case, as illustrated in FIG. 6, the antireflection structure formed on each of the plurality of
The antireflective structure provided according to the present embodiment may be arranged at intervals of 200 nm or less to increase the transmission efficiency of light and to prevent the reflection of light.
At this time, the
On the other hand, the anti-reflection layer 130 may be disposed adjacent to each other, not only to increase the optical characteristics, but also to improve the physical characteristics.
9 shows an antireflective structure disposed adjacent to each other.
When the antireflective structures are disposed adjacent to each other, physical properties such as strength and durability are increased in comparison with the other cases.
In FIG. 10, an antireflective substrate having antireflective structures disposed adjacent to each other is set as an experimental group, and in FIG. 11, a substrate including a coating layer that is simply continuously formed without forming an antireflective structure is set as a control. A tester reliability tester using a tester is shown.
The tester conditions were to set the type of rubber eraser (1/4 in diameter) as the friction, the load was set to 500 grams, the
As shown in FIG. 10, the antireflective layer 130 including the antireflective structures disposed adjacent to each other has a smaller variation in the contact angle of H 2 O than the continuous coating layer shown in FIG. 11 even after the eraser wear test. In physical properties such as durability, better results are shown.
In this case, the anti-reflection substrate provided according to the present embodiment may further include forming the continuous thin film layer 140 (S400).
As illustrated in FIG. 7, the continuous thin film layer 140 is formed on the surface of the antireflection layer 130 and has a unit particle structure in order to further improve physical properties such as strength, hardness, and durability of the antireflection substrate. It is a layer of material with a continuous face formed on the surface of the antireflective structure.
The continuous thin film layer 140 provided according to the present embodiment may be formed using the same material as the inorganic particles used to form the anti-reflection layer 130.
In the case of using the same material as the anti-reflection layer 130, it is easy to control optical characteristics such as refraction of light, and troublesomeness may be reduced in the manufacturing process.
Meanwhile, the continuous thin film layer 140 provided according to the present embodiment may be formed to have a thickness of 5 nm or more and 100 nm or less for controlling the optical characteristics.
The continuous thin film layer 140 provided according to the present embodiment may be formed by deposition of inorganic particles.
In addition to the above-described plasma deposition method, it may be formed using various methods generally used for deposition of materials, such as deposition methods such as physical vapor deposition (PVD) and chemical vapor deposition (CVD). Of course.
In addition to the vapor deposition method, the space between the spherical antireflective structure forming the antireflective layer 130 and the surface of the antireflective layer 130 include liquid polymer particles such as sol-gel or dipping. The method of forming the continuous thin film layer 140 by applying to may be used.
As described above, in the method of manufacturing the antireflective substrate provided according to the present embodiment, the surface of the
Therefore, a method of manufacturing an antireflective substrate can be provided that can also easily control the optical and physical properties of the antireflective substrate.
Hereinafter, an antireflection substrate manufactured by the above-described antireflection substrate manufacturing method will be described.
As shown in FIGS. 1 and 2, in accordance with another embodiment of the present invention, an antireflection substrate including a
The
Since the
At this time, the
The reinforcement coating layer may improve physical properties such as strength and hardness of the
The polymer paint used to form the reinforcement coating layer may be a polymer paint composed of at least one of acrylic, polyurethane, epoxy, and primer paints, and in addition to the above-described effects on the
In addition, the reinforcing coating layer provided according to the present embodiment may be formed by mixing a metal oxide, sulfide, alumina, silica, zirconium oxide, iron oxide, and the like, which are inorganic fine particles, with the above-described polymer paint.
The plurality of
As described above, the optical characteristics of the antireflective substrate provided according to the present embodiment are controlled by the antireflective layer 130 made of the antireflective structure. In addition, the spacing between the antireflective structures is controlled by the spacing between the plurality of
Therefore, as will be described later, the intervals between the plurality of
Control of the spacing between the plurality of
The anti-reflection layer 130 is formed by depositing inorganic particles on the plurality of
The inorganic particles provided according to the present embodiment may be a metal material (Al, Ba, Be, Ca, Cr, Cu, Cd, Dy, Ga, Ge, Hf, In, Lu, Mg, Mo, Ni, Rb, Sc, From oxides and nitrides of Si, Sn, Ta, Te, Ti, W, Zn, Zr, Yb), and oxide-nitride compounds (AlON, SiON) and magnesium fluoride It may include at least one.
Accordingly, the anti-reflection layer 130 formed through the inorganic particles described above may also prevent reflection of light, thereby contributing to the improvement of light transmittance.
According to the present exemplary embodiment, the method of depositing inorganic particles may be a deposition method using plasma, similarly to forming the plurality of
As described above, the antireflective structure provided according to the present embodiment may be arranged at intervals of 200 nm or less in order to increase light transmission efficiency and prevent light reflection.
In addition, the
In this case, the antireflective structures may be disposed adjacent to each other, and due to the antireflective layer 130 formed by the antireflective structures disposed adjacent to each other, physical properties such as strength and durability of the antireflective substrate are increased.
Experimental results related to this are shown in FIGS. 10 and 11, and as shown in FIG. 10, an anti-reflection layer 130 including an anti-reflective structure disposed adjacent to each other is formed by the continuous coating layer shown in FIG. 11. Even after the eraser abrasion test, the variation in the contact angle of H 2 O is small, and the results are superior in physical properties such as strength and durability.
The antireflection substrate provided according to the present embodiment may further include a continuous thin film layer 140.
The continuous thin film layer 140 is formed on the surface of the antireflection layer 130, and is formed on the surface of the antireflection structure having a unit particle structure in order to further improve physical properties such as strength, hardness, and durability of the antireflection substrate. It is a layer of material with a positive face.
The continuous thin film layer 140 provided according to the present embodiment may be formed using the same material as the inorganic particles used to form the anti-reflection layer 130.
In the case of using the same material as the anti-reflection layer 130, it is easy to control optical characteristics such as refraction of light, and troublesomeness may be reduced in the manufacturing process.
Meanwhile, the continuous thin film layer 140 provided according to the present embodiment may be formed to have a thickness of 5 nm or more and 100 nm or less for controlling the optical characteristics.
As described above, the antireflective substrate provided according to the present embodiment is formed by pretreating the surface of the
Therefore, the antireflective substrate can be provided which can also easily control the optical and physical characteristics of the antireflective substrate.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit of the invention as set forth in the appended claims. The present invention can be variously modified and changed by those skilled in the art, and it is also within the scope of the present invention.
110: Base substrate
120: a plurality of protrusion structures
130: antireflection layer
140: continuous thin film layer
Claims (26)
Forming a plurality of protruding structures on the surface of the base substrate using a dry etching method; And
Forming an antireflection structure on the surface of the base substrate by forming an antireflection structure capable of preventing reflection of light on each of the plurality of protrusion structures by deposition of inorganic particles.
Forming the plurality of protrusion structures,
A method of manufacturing an anti-reflection substrate, characterized in that to form the plurality of projection structure on the surface of the base substrate using a plasma dry etching method.
Forming the anti-reflection layer,
Plasma thin film deposition of the inorganic particles to form the anti-reflection substrate, characterized in that for forming.
The antireflective structures are arranged at intervals of 200 nm or less,
Forming the plurality of protrusion structures,
And controlling an etching exposure time to adjust the diameters and the arrangement intervals of the plurality of protruding structures so that the antireflective structures can be arranged at intervals of 200 nm or less.
Controlling the etching exposure time,
The etching exposure time is less than 7 minutes.
Forming the anti-reflection layer,
And forming the anti-reflection layer made of the anti-reflective structure disposed adjacent to each other.
Forming the anti-reflection layer,
A method for producing an antireflective substrate, comprising forming the spherical antireflection structure.
After forming the anti-reflection layer,
And forming a continuous thin film layer on the surface of the anti-reflection layer.
Forming the continuous thin film layer,
And forming the continuous thin film layer using the same material as the inorganic particles.
The continuous thin film layer,
It is formed with the thickness of 5 nm or more and 100 nm or less, The anti-reflective substrate manufacturing method characterized by the above-mentioned.
Method of manufacturing an anti-reflection substrate, characterized in that the surface of the base substrate may be provided with a reinforcement coating layer.
Forming the plurality of protrusion structures by using a dry etching method,
A method of manufacturing an antireflective substrate comprising dry etching comprising at least one gas selected from Ar, O 2 , H 2 , He and N 2 .
The inorganic particles,
Metallic materials (Al, Ba, Be, Ca, Cr, Cu, Cd, Dy, Ga, Ge, Hf, In, Lu, Mg, Mo, Ni, Rb, Sc, Si, Sn, Ta, Te, Ti, W , Zn, Zr, Yb) oxide and nitride, and oxide-nitride compound (oxynitride: AlON, SiON) and magnesium fluoride (Magnesium fluoride) at least one selected from the Anti-reflective substrate manufacturing method.
The base substrate includes:
Fluorine-based transparent polymer film, acrylic transparent polymer film, polyethylene terephthalate-based transparent polymer film, polycarbonate, polyethylene naphthalate, polyethersulfone, polycycloolefin, CR39 and at least one selected from polyurethane (polyiourethane) An antireflection substrate manufacturing method characterized by the above-mentioned.
A plurality of protrusion structures formed on one surface of the base substrate;
An antireflection substrate formed on the plurality of protruding structures, the antireflection structure formed by deposition of inorganic particles, and including an antireflection layer formed on a surface of the base substrate.
The plurality of protrusion structures,
The anti-reflection substrate is formed on the surface of the base substrate using a plasma dry etching method.
The anti-reflection layer,
An anti-reflection substrate comprising the anti-reflective structure formed by depositing the inorganic particles with a plasma thin film.
The antireflection structure,
An anti-reflection substrate, characterized in that arranged at intervals of 200nm or less.
The anti-reflection layer,
An antireflection substrate comprising the antireflection structures disposed adjacent to each other.
The antireflection structure,
An antireflection substrate, characterized in that formed in a spherical shape.
The anti-reflection substrate further comprises a continuous thin film layer formed on the surface of the anti-reflection layer.
The continuous thin film layer,
The antireflection substrate, characterized in that formed using the same material as the inorganic particles.
The continuous thin film layer,
An antireflection substrate, characterized in that formed at a thickness of 5 nm or more and 100 nm or less.
The base substrate includes:
An antireflection substrate, characterized in that the reinforcing coating layer is provided on the surface of the base substrate.
The inorganic particles,
Metallic materials (Al, Ba, Be, Ca, Cr, Cu, Cd, Dy, Ga, Ge, Hf, In, Lu, Mg, Mo, Ni, Rb, Sc, Si, Sn, Ta, Te, Ti, W , Zn, Zr, Yb) oxide and nitride, and oxide-nitride compound (oxynitride: AlON, SiON) and magnesium fluoride (Magnesium fluoride) at least one selected from the Antireflective substrate.
The base substrate includes:
Fluorine-based transparent polymer film, acrylic transparent polymer film, polyethylene terephthalate-based transparent polymer film, polycarbonate, polyethylene naphthalate, polyethersulfone, polycycloolefin, CR39 and at least one selected from polyurethane (polyiourethane) An antireflection substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020120027726A KR101244879B1 (en) | 2012-03-19 | 2012-03-19 | Anti-reflecting board and manufacturing method thereof |
| PCT/KR2012/003495 WO2013141442A1 (en) | 2012-03-19 | 2012-05-03 | Anti-reflective substrate and manufacturing method therefor |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020120027726A KR101244879B1 (en) | 2012-03-19 | 2012-03-19 | Anti-reflecting board and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101601150B1 (en) * | 2014-09-26 | 2016-03-09 | 한국기계연구원 | substrate having inorganic substance grown thereon and fabricating method for the same |
| KR20170052847A (en) * | 2015-11-05 | 2017-05-15 | 한국기계연구원 | Structure for preventing reflection and method of fabricating the same |
| KR20190055691A (en) * | 2017-11-15 | 2019-05-23 | 한국기계연구원 | Polymer substrates comprising antireflective layer and thin metal layer and fabrication method for the same |
| US10527494B2 (en) | 2014-09-26 | 2020-01-07 | Korea Intitute of Machinery & Materials | Substrate on which multiple nanogaps are formed, and manufacturing method therefor |
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| KR20040071306A (en) * | 2002-01-11 | 2004-08-11 | 후지 샤신 필름 가부시기가이샤 | Antiglare optical film, polarizing plate and display unit using the same |
| US20110073162A1 (en) | 2008-05-23 | 2011-03-31 | Kaneka Corporation | Substrate for thin-film photoelectric conversion device, thin-film photoelectric conversion device including the same, and method for producing substrate for thin-film photoelectric conversion device |
| KR20110104037A (en) * | 2008-12-17 | 2011-09-21 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Light extraction film with nanoparticle coatings |
| KR20110007724A (en) * | 2009-07-17 | 2011-01-25 | 한국전자통신연구원 | Anti-reflection nano structure and method for manufacting the same |
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