KR101220243B1 - Nano structure and its fabrication method - Google Patents

Abstract

PURPOSE: A microstructure capable of adjusting a gap between unit structures, and a manufacturing method thereof are provided to form a microstructure denser than a pattern space of a nanotemplate. CONSTITUTION: A microstructure is formed on a substrate surface. The microstructure includes first and second structures which are successively formed. A microstructure manufacturing method comprises the following steps: forming a first nanotemplate(80) having a plurality of first pores(50) on a substrate(30); forming a first microstructure(110) on the substrate through the first pores, and removing the first nanotemplate; forming a second nanotemplate(81) having a plurality of second pores(51) on the first microstructure and the substrate; and forming a second microstructure(111) on the substrate through the second pores, and removing the second nanotemplate.

Description

Microstructure and its manufacturing method {Nano structure and its fabrication method}

The present invention relates to a technique for forming a microstructure on a substrate, and more particularly to a technique for forming a microstructure using a nano template used as a mask.

Nano templates with nanometer-sized pores can be used in fields such as electronics, optics and micromechanical devices. Nano templates can be obtained using lithographic processes and methods of anodizing aluminum in acidic electrolytes.

After providing the nano template on the substrate, the microstructure can be made by forming the microstructure composition on the substrate through the pores of the nano template. At this time, the spacing between the unit structures forming the microstructure is determined by the distance between the pores formed in the nano-template.

The present invention is to provide a method for forming a microstructure more dense than the pattern spacing of the nano-template and the microstructure formed by the method. The scope of the present invention is not limited by the above-mentioned subject.

In accordance with an aspect of the present invention, a method of forming a microstructure includes: forming a first nano template having a plurality of first pores on a substrate, and forming a first nano template on the substrate through the first pores. 1 removing the first nano template after forming the microstructure, forming a second nano template having a plurality of second pores on the first microstructure above and the substrate, the second pore above Forming a second microstructure on the substrate, and removing the second nano template.

At this time, the first pores of the above have a regularly repeated pattern, the second pores of the same pattern as the above pattern, the first microstructure of the above and the second microstructure on the substrate The spacing between the unit structures of the microstructure may be smaller than the spacing between the pores of the first or second pores by the above pattern.

In this case, the forming of the second nano-template may include: positioning the second nano-template on the second nano-template so that the second micro-structure formed in the forming of the second micro-structure does not overlap with the first micro-structure. And adjusting.

In this case, the forming of the first nano template or the forming of the second nano template may include providing a stack including a pattern layer having pores and a protective layer filled in pores of the pattern layer. Attaching the stack to the substrate above, and removing the protective layer.

In this case, the forming of the second nano-template on the substrate and the first microstructure on the step, providing a laminate comprising a pattern layer with pores and a protective layer filled in the pores of the pattern layer , Attaching the stack above the substrate and the first microstructure above, and removing the protective layer.

In this case, a deposition layer may be formed on at least one of the sidewall surfaces of the pores formed in the first nano template and the sidewall surfaces of the pores formed in the second nano template.

At this time, the method of forming the microstructures is a step of forming a third nano-template having a plurality of third pores on the first microstructure, the second microstructure and the substrate above, through the third pores Removing the third nano template after forming the third microstructure on the substrate, the fourth nano template having a plurality of fourth pores, the first microstructure on the second microstructure, Forming the third microstructure of the substrate and the substrate, and removing the fourth nano template from the substrate after forming the fourth microstructure on the substrate through the fourth pores.

In this case, the third nano-template and the fourth nano-template are formed such that the first microstructure, the second microstructure, the third microstructure, and the fourth microstructure are not overlapped with each other. Can be.

In this case, the above first pores have a regularly repeated pattern, and the above second pores, above third pores, and above fourth pores may have the same pattern as the above pattern. have.

At this time, the horizontal axis and the vertical axis spacing of the unit structures forming the microstructure formed by the first microstructure, the second microstructure, the third microstructure, and the fourth microstructure of the above is the same. It can be characterized.

According to another aspect of the present invention, a substrate having a microstructure is provided. The substrate is a substrate having a microstructure formed on a surface thereof, wherein the microstructure includes a first microstructure and a second microstructure sequentially formed, and the first microstructure includes a plurality of first pores having a first pattern. Formed by the first nano-template having the second nanostructure, and the second microstructure above is formed by the second nano-template having the plurality of second pores having the second pattern.

At this time, the first pattern is a pattern that is regularly repeated, the second pattern is the same as the first pattern, fine on the substrate consisting of the first microstructure and the second microstructure of the The spacing between the unit structures of the structure may be less than the spacing between the above first pores by the above first pattern.

In this case, the microstructure includes a third microstructure and a fourth microstructure sequentially formed after the first microstructure and the second microstructure are formed, and the third microstructure is a third microstructure. It may be formed by a third nano-template having a plurality of third pores having a pattern, the fourth microstructure may be formed by a second nano-template having a plurality of fourth pores having a fourth pattern.

At this time, the first pattern is a pattern that is regularly repeated, the second pattern, the third pattern, and the fourth pattern is the same as the first pattern, the first microstructure, The spacing between the second microstructure of the above, the third microstructure of the above, and the unit structure of the microstructure on the substrate consisting of the fourth microstructure of the above, the first pores of the above by the above first pattern It may be less than the interval between.

The present invention has been carried out with the support of the Basic Research Project of the Ministry of Education, Science and Technology (Task No .: 2009-0077593, 2010-0014925, 2010-0015014), and the Ministry of Knowledge Economy's Industrial Source Technology Development Project (Telecommunications) (Task No .: 10030559). The result is.

According to the present invention can be provided a method for forming a microstructure more dense than the pattern spacing of the nano-template and the microstructure formed by the method. The scope of the present invention is not limited by the above-mentioned effects.

1A is a perspective view of a nano template that may be used for one embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along the line II of FIG. 1A.
2 relates to a method of forming a microstructure on a substrate in accordance with one embodiment of the present invention.
3A, 3B and 3C are plan views showing the microstructure formed by the method according to FIG. 2.
4 illustrates a microstructure formed on a substrate according to another embodiment of the present invention.
FIG. 5 illustrates steps S101 to S103 of FIG. 2 in more detail.
Figure 6 shows a method of manufacturing a nano template used in an embodiment of the present invention.
Figure 7 shows a method of manufacturing a nano template used in another embodiment of the present invention.
Figure 8 shows a method of manufacturing a nano template used in another embodiment of the present invention.

Hereinafter, the present invention will be described in detail by explaining preferred embodiments of the present invention. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you.

1A is a perspective view of a nano template that may be used for one embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along the line II of FIG. 1A.

Referring to FIG. 1A, the nano template 80 may be a pattern layer 10 generated from a metal base material. The metal matrix may comprise any metal, but may include metals such as Al, Ti, Ta, Zr, Nb, or W, which are particularly advantageous for anodization. A plurality of through pores 50 may be formed in the pattern layer 10. FIG. 1B is a cross-sectional view of the nano template of FIG. 1A taken along line II. The pores 50 may be formed in a regular pattern, and may be spaced apart by a predetermined distance d1 between the pores. However, depending on the embodiment, the arrangement of pores may not be regular.

2 relates to a method of forming a microstructure on a substrate in accordance with one embodiment of the present invention.

In step S101 of FIG. 2, the nano template 80 described with reference to FIG. 1 is formed on the substrate 30. In this case, the substrate 30 may be a conductive substrate (Pt / Ti / SiO ₂ / Si).

In step S102 of FIG. 2, the microstructure composition 100 may be formed on the substrate 30 through the pores 50 of the nano-template 80.

When the pattern layer 10 is removed in step S103 of FIG. 2, that is, when the nano template 80 is removed, the substrate 30 on which the microstructure 110 is formed may be obtained.

In step S104 of FIG. 2, the nano template 81 described with reference to FIG. 1 is formed on the substrate 30 and the microstructure 110. At this time, the nano-template 81 may have the same pattern as the nano-template 80 in step S101, where the position where the nano-template 81 is disposed on the substrate 30 is the nano-template 80 It may have an offset by a predetermined distance from the position where it was disposed in the substrate 30. In this case, since the microstructure 110 is covered by the pattern portion 11 of the nano-template 81, the microstructure 110 may not be directly exposed to the outside by the pores 51 of the nano-template 81. In some embodiments, the nano template 81 may have a different pattern from that of the nano template 80.

In operation S105 of FIG. 2, the microstructure composition 120 may be formed on the substrate 30 through the pores 51 of the nano-template 81. At this time, the material of the microstructure composition 120 may be the same as the microstructure composition 110 in step (S102), depending on the embodiment may be made of a different material.

When the pattern layer 11 is removed in step S106 of FIG. 2, that is, when the nano template 81 is removed, the substrate 30 having the microstructure 111 and the microstructure 110 may be obtained. In this case, the microstructures 111 and 110 may be spaced apart from each other at predetermined intervals without overlapping each other.

3A, 3B and 3C are plan views showing the microstructure formed by the method according to FIG. 2.

3A is a plan view illustrating the microstructure 110 formed by steps S102 and S103 of FIG. 2. The microstructure 110 is formed on the substrate 30 by the microstructure composition 100, and may have a plurality of unit structures 1101. The distance d1 between the unit structures 1101 may be determined by the distance d1 between the pores 50 formed in the nano template 80 described above.

FIG. 3B is a plan view separately illustrating only the microstructure 111 formed by steps S105 and S106 of FIG. 2. The microstructure 111 is formed on the substrate 30 by the microstructure composition 120, and may have a plurality of unit structures 1111 gathered therefrom. The spacing d2 between the unit structures 1111 is a value determined by the spacing d2 between the pores 51 formed in the nano template 81 described above. At this time, in one embodiment, since the nano template 81 and the nano template 80 may have the same pattern, the interval d1 and the interval d2 may be the same (d1 = d2).

FIG. 3C shows an actual plan view shown in step S106 of FIG. 2. The microstructure 110 and the microstructure 111 may be disposed so as not to overlap each other, and the minimum distance d3 between the unit structure 1101 and the unit structure 1111 is smaller than the distances d1 and d2 described above. Can be. That is, when the microstructures 110 and 111 are formed as in the exemplary embodiment of the present invention, the nano templates 80 and 81 having the same distance (d1 = d2) between the pores 50 and 51 are the same. The minimum distance d3 between the unit structures 1101 and 1111 of the microstructures 110 and 111 may be smaller than the distances d1 and d2 between the pores formed in the nano template. The distance value between the pores formed in the nano-template may have a minimum threshold value according to the process. According to one embodiment of the present invention, even in this case, it is possible to form a microstructure at a denser interval than this threshold value. I can understand.

4 illustrates a microstructure formed on a substrate according to another embodiment of the present invention.

In FIG. 2, a process of creating a microstructure as shown in FIG. 3C has been described through a process of forming a nano template twice on a substrate. However, each time the same process as steps S104 to S106 is repeated after step S106 of FIG. 2, another microstructure may be additionally formed on the substrate. However, when the new nano-template is formed on the substrate, the pores formed in the new nano-template and the microstructure already formed on the substrate can be controlled so as not to overlap each other.

4 illustrates an example of a microstructure pattern obtained through a process of forming a total of four nano templates on a substrate. In FIG. 4, the microstructure formed on the substrate 30 includes a microstructure 110 formed of the unit structures 1101, a microstructure 111 formed of the unit structures 1111, and a microstructure formed of the unit structures 1121. And a microstructure 113 composed of the unit structures 1131. In the structure of FIG. 3C, the horizontal axis spacing d3 and the vertical axis spacing d1 of the unit structures are different from each other. In the structure of FIG. 4, the horizontal axis spacing d3 and the vertical axis spacing d3 of the unit structures are the same.

FIG. 5 illustrates steps S101 to S103 of FIG. 2 in more detail.

As shown in i) of FIG. 5A, a nano-template 80 including a pattern layer 10 having pores 50 formed thereon may be provided. The nano-template 80 used in the embodiments of the present invention may further include a deposition layer 20 on the surface of the pores 50.

When the nano template 80 is used, a microstructure 110 such as a nanocapacitor may be formed on the substrate 30 by, for example, a method described below. That is, after forming the microstructure composition 100 on the substrate 30 through the pores 50 of the nano-template 80 (ii of Figure 5a), the microstructure composition deposited on the pattern layer 10 Removing (100) (iii) of FIG. 5A) and then removing the pattern layer 10 can obtain a substrate 30 on which the microstructure 110 is formed (iv) of FIG. 5A). The microstructured composition 100 includes, for example, ferroelectric materials, conductive materials, insulating materials, semiconductor materials, and the like, and other materials may be used as the microstructured composition 100.

FIG. 5B shows a longitudinal section A-A 'of the nano-template 80 shown in i) of FIG. 5A. The pores 50 formed through the pattern layer 10 may extend upward and downward, and the surface of the substrate 30 may be exposed through the pores 50. The pores 50 may have a nano size.

The nano-template 80 used in one embodiment of the present invention may include a deposition layer 20 deposited on the sidewall surface of the pores 50, as shown in FIG. The diameter or width of the pores 50 may be controlled by adjusting the thickness of the deposition layer 20. Accordingly, the aspect ratio of the pores 50 may be controlled.

However, the deposition layer 20 may not exist in the nano template 80 used in another embodiment of the present invention, as shown in FIG. 5B.

According to an embodiment, the dimensions of the drawings shown in FIGS. 5A and 5B may be exaggerated for explanation. In addition, the basic concept of forming the microstructure 110 shown in FIGS. 5A and 5B may be similarly applied to steps S104 to S106 of FIG. 2, and additionally, a nano template is added to make the structure as shown in FIG. 4. The same can be applied to use.

Hereinafter, the structure of a nano-template that can be provided by the present invention and a method of manufacturing the same will be described in detail with reference to the accompanying drawings for each embodiment. The dimensions of each component of the accompanying drawings may be exaggerated for the sake of explanation.

Nano template  Manufacturing method 1

Figure 6 shows a method of manufacturing a nano template used in an embodiment of the present invention.

The nano template may be generated from the metal base material 12 (see S201 of FIG. 6). The metal base material 12 may include any metal, but may include a metal such as Al, Ti, Ta, Zr, Nb, or W, which is particularly advantageous for anodization. Hereinafter, a method of manufacturing a nano template from an Al metal base material will be described with reference to FIG. 6. Hereinafter, a nano template generated from an Al metal base material may be referred to as an AAO template. It will be appreciated that the method described below can be applied to other metals such as Ti, Ta, Zr, Nb, or W as well as Al.

The method for producing a nano template used in an embodiment of the present invention may include (I) pretreatment, (II) anodization, and (III) post-treatment. As the metal base material 12, a 0.50 mm thick aluminum sheet having 99.999% purity can be used.

(I) pretreatment process (not shown)

The pretreatment process of the aluminum sheet may include an ultrasonication process and a cleaning process. The sonication process may be performed using acetone and ethanol, whereby organic matter attached to the aluminum surface may be removed. The washing process can be performed using deionized water (DI water).

Then, in a solution in which the perchloric acid (HClO ₄ ) and ethanol are mixed at a ratio of 1: 5, an electropolishing process may be performed for 4 minutes and 30 seconds under conditions of 18V and 10 ° C. This makes it possible to form a thin aluminum plate on a flat surface.

(II) Anodization Process (S202 ~ S204)

After the pretreatment process, the anodization process can proceed. The anodization process may further include three steps, a first anodization process (S202), an alumina film removal process (S203), and a second anodization process (S204).

First, the first anodization process (S202) may be performed at 40V for 24 hours in an electrolyte solution of 0.3M at a temperature of 7 ° C. The time required for the first anodization process S202 may affect the arrangement of the pores 50. Anodization may be performed for 24 hours to obtain well arranged pores 50 in a hexagonal pattern. An oxalic acid (C ₂ H ₂ O ₄ : oxalic acid) solution may be used as the electrolyte solution. Alternatively, sulfuric acid, phosphoric acid, chromic acid, or hydrofluoric acid may be used as the electrolyte solution to variously control the density or size of the pores.

Formation of the pores 50 is formed due to chemical stress due to volume expansion while oxide is formed at the interface between aluminum and alumina. If anodization is performed at low voltage or low temperature, this stress is small and it is difficult to obtain hexagonal arrays. In this case, if the anodization time is prolonged, the pores 50 may be well arranged.

Second, the alumina film (Al ₂ O ₃ layer) formed by the first anodization process, that is, the AAO layer may be removed (S203). Since the pores of the upper portion of the AAO layer generated by the first anodization process (S202) are irregularly formed, the AAO layer may be removed by chemical etching. At 60 ° C for this acid _{6wt% (H 3 PO 4:} phosphoric acid) and the chromic acid 1.8wt% (H ₂ CrO ₄ Using a mixture of: chromic acid, the alumina film (Al ₂ O ₃ ) formed by the first anodization process can be dissolved until substantially completely removed.

Third, the second anodization process may be performed after removing the AAO layer (S204). Since the pattern of the hexagonal structure left in aluminum by the step of removing the above AAO layer acts as an AAO layer growth template in the second anodization step (S204), in the second anodization step (S204) Well aligned nanoporous aluminum templates can be formed.

The secondary anodization step S204 may be performed at a voltage of 7 ° C. and 40 V, which is the same condition as the first anodization step S202. When the second anodization process (S204) is performed over 4 minutes, an AAO layer having a thickness of about 300 nm to 400 nm can be formed. The length of the anodized aluminum can be determined in proportion to the anodization time, and in addition, AAO templates of various sizes and lengths can be formed according to the temperature of the anodizing process, the applied voltage, and the solution used.

(III) post-processing steps (S205-S209)

After performing the above-described anodization processes (S202 to S204), post-processing processes (S205 to S209) may be performed.

AAO templates prepared from 0.3M oxalic acid (C ₂ H ₂ O ₄ : oxalic acid) solution at 7 ° C can be composed of hexagonal honeycomb dense packed pores 50 with an average diameter of about 35 nm. have.

After the second anodization process (S204) is completed, the protective layer 40 may be filled in the AAO template (S205). After filling the protective layer 40 may be subjected to a heat treatment for 2 hours at 80 ° C. The protective layer 40 serves to prevent breakage of the AAO pattern layers 10 and 11 having a thickness of 300 to 400 nm, and the size of the pores 50 is not intended when removing the bottom layer 11 under the AAO. It can be prevented from being widened, and the material can be easily handled in the subsequent process of manufacturing the nano template mask. Polystyrene (1.4 wt% PS / CHCl ₃ solution) may be used as the material of the protective layer 40. Hereinafter, the AAO layer filled with polystyrene as the protective layer 40 may be referred to as the PS / AAO layers 10, 11, and 40. However, it should be noted that various alternatives such as paraffin wax, nail polish, or the like may be used instead of polystyrene as the protective layer 40, or a spin coating type insulation may be used. have.

After the process of filling the protective layer 40 (S205), the supersaturated mercury chloride (HgCl ₂ ) may be used to separate the PS / AAO layers 10, 11, and 40 from the metal base material (aluminum) 12. (S206).

Next, the bottom layer 11 below the AAO may be removed from the PS / AAO layers 10, 11, and 40 (S207). For this purpose, deionized water can first be used to wash the separated PS / AAO layers 10, 11, 40 above. Then, a solution of phosphoric acid (H ₃ PO ₄ ) may be added at 30 ° C. for 1 to 120 minutes to remove the bottom layer 11 under the AAO. In this case, since the thickness of the bottom layer 11 under the AAO may vary depending on the size of the pore 50 (eg, 1 nm to 95 nm), the pore 50 may be unintentionally uncontrolled if the time for adding the phosphoric acid solution is not well controlled. The problem is that it can be extended further.

After the bottom layer 11 under the AAO is removed, the PS / AAO layers 10 and 40 may be washed with deionized water and then placed on the substrate 30 in a state of deionized water (S208). In this case, the substrate 30 may be a conductive substrate (Pt / Ti / SiO ₂ / Si). Then, the heat treatment may be performed at 100 ° C. for 30 minutes to adsorb the PS / AAO layers 10 and 40 onto the substrate 30.

Finally, the PS / AAO layers 10 and 40 adsorbed on the substrate 30 may be immersed in chloroform (CHCl ₃ ) to completely remove the protective layer 40 (S209). As a result, an AAO mask, that is, a nano template, may be formed on the substrate 30.

In order to explain a method for manufacturing a nano-template used in one embodiment of the present invention, specific experimental examples have been described by presenting specific numerical values, but the present invention is not limited to these specific numerical values and the numerical values may be changed. Is self-explanatory. In addition, even if some of the steps described above are omitted, it is possible to obtain a nano template. However, some effects may not be obtained by steps omitted.

Nano template  Manufacturing method 2

Figure 7 shows a method of manufacturing a nano template used in another embodiment of the present invention.

Steps S301 to S304 of FIG. 7 correspond to steps S201 to S204 of FIG. 6, and steps S306 to S310 of FIG. 7 correspond to steps S205 to FIG. 6 of FIG. 6. Corresponding to step S209, in the method according to FIG. 7, step S305 is added.

The manufacturing method according to FIG. 7 includes the (I) pretreatment step, (II) anodization step and (III) post-treatment step described in FIG. 6. 6 and 7 may be the same as the (I) pretreatment process and (II) anodization process. However, step (S305) is added to the (III) post-treatment process of the manufacturing method shown in FIG. 6 in the (III) post-treatment process of the manufacturing method shown in FIG. Hereinafter, only steps S305 and subsequent steps will be described in order to avoid redundant description.

As described above, the AAO template prepared from 0.3 M oxalic acid (C ₂ H ₂ O ₄ : oxalic acid) solution at 7 ° C. has hexagonal honeycomb densely packed pores 50 having an average diameter of about 35 nm. It may consist of.

The size of the pores 50 can be reduced by using the AAO template prepared in this way (S305). Atomic Layer Deposition (ALD) is a deposition method using atomic deposition which can be deposited on nanoscale structures. Accordingly, the diameter of the pores 50 may be reduced to, for example, 1 nm by depositing the surface of the pores 50 inside the AAO with Al ₂ O ₃ using an atomic unit deposition method to grow the deposition layer 20. The above-described deposition layer of Al ₂ O ₃ is an example of the deposition layer 20 shown in FIG. 5B.

On the other hand, after about 4 minutes of the above-described secondary anodization process, the inner surface of the AAO pores 50 may have a rough shape. At this time, if the AAO process is extended over about 30 minutes before the atomic unit deposition process is performed, and the pore size is extended to about 40 nm, the inside of the pores 50 may be made in a clean circular state. By this expansion process, the atomic deposition process can be performed efficiently.

Steps S306 to S310 after step S305 correspond to steps S205 to S209 of FIG. 6. The difference is that the deposition layer 20 is formed on the surface of the pores 50 formed in the pattern layer 10. The values presented here can be altered depending on the target size of the pore.

Nano template  Manufacturing Method 3

Figure 8 shows a method of manufacturing a nano template used in another embodiment of the present invention.

Steps S401 to S404 of FIG. 8 correspond to steps S201 to S204 of FIG. 6, and steps S406 to S410 of FIG. 8 correspond to steps S205 and S205 of FIG. 6. Corresponding to step S209, in the method according to FIG. 8, step S405 is added.

The manufacturing method according to FIG. 8 includes the (I) pretreatment step, (II) anodization step and (III) post-treatment step described in FIG. 6. At this time, in the manufacturing method of FIG. 6 and FIG. 8, (I) pretreatment process and (II) anodization process are the same. However, step (S405) is added to the (III) post-treatment process of the manufacturing method according to FIG. 6 to the (III) post-treatment process of the manufacturing method according to FIG. 8. Hereinafter, only steps S405 and subsequent steps will be described to avoid redundant description.

As described above, the AAO template prepared from 0.3 M oxalic acid (C ₂ H ₂ O ₄ : oxalic acid) solution at 7 ° C. has hexagonal honeycomb densely packed pores 50 having an average diameter of about 35 nm. It may consist of.

The pore 50 of the AAO template thus made can be widened using 0.1 M phosphoric acid (H ₃ PO ₄ ) solution (30 ° C.) (S405). By the step S405, the diameter of the pores 50 may be increased to, for example, 95 nm. Steps S406 through S410 after step S405 correspond to steps S205 through S209 of FIG. 2. The above values may be changed according to the target size of the pores.

When the (II) anodization process is performed in the above-described nano-template manufacturing methods 1 to 3, the first anodization process (S202, S302, S402) and the alumina film removal process (S203, S303, S403) may be omitted. . The primary anodization process (S202, S302, S402) and the alumina film removal process (S203, S303, S403) function to form the surface of the substrate preliminarily into a hexagonal structure. This is because the conditions of S204, S304, S404) can be adjusted at least in part.

(I) pretreatment process and (II) anodization process of the above-described nano-template manufacturing method 1 to 3 may be provided replaced by one step. That is, steps S201 to S204 of FIG. 6 may be replaced by providing a structure shown in step S204. In other words, steps S201 to S204 of FIG. 6 may be regarded as one embodiment for providing the structure shown in step S204. The same applies to steps S301 to S304 of FIG. 7 and steps S401 to S404 of FIG. 8.

In addition, in the modification of the method of manufacturing a nano-template according to FIG. 6, the filling of the protective layer 40 (S205) may be omitted. According to this, there is no need to remove the protective layer 40 after attaching the pattern layer 10 to the substrate 30.

The foregoing description of specific embodiments of the invention has been presented for purposes of illustration and description. Therefore, the present invention is not limited to the above embodiments, and many modifications and variations are made by those skilled in the art within the technical spirit of the present invention in combination with the above embodiments. It is obvious.

Claims (12)

Forming a first nano template having a plurality of first pores on a substrate;
Removing the first nano template after forming a first microstructure on the substrate through the first pores;
Forming a second nano template having a plurality of second pores on the first microstructure and the substrate; And
Removing the second nano template after forming a second microstructure on the substrate through the second pores
A microstructure forming method comprising a. The method of claim 1, wherein the second nano template is formed so that the second pores do not overlap the first microstructure. The method of claim 2, wherein the first pores have a regularly repeated pattern, and the second pores have the same pattern as the pattern. The method of claim 1,
Forming the first nano template or forming the second nano template,
Providing a laminate including a pattern layer having pores and a protective layer filled in pores of the pattern layer,
Attaching the stack on the substrate, and
Removing the protective layer. The method of claim 1,
Forming a third nano template having a plurality of third pores on the first microstructure, the second microstructure and the substrate;
Removing the third nano template after forming a third microstructure on the substrate through the third pores;
Forming a fourth nano template having a plurality of fourth pores on the first microstructure, the second microstructure, the third microstructure and the substrate; And
Removing the fourth nano template after forming a fourth microstructure on the substrate through the fourth pores;
A microstructure forming method comprising a. The method of claim 5, wherein the third nano template and the fourth nano template are formed such that the first microstructure, the second microstructure, the third microstructure, and the fourth microstructure do not overlap each other. Microstructure Formation Method. The method of claim 5, wherein the first pores have a regularly repeated pattern, and the second pores, the third pores, and the fourth pores have the same pattern as the pattern. Structure formation method. The method of claim 5, wherein the first and second microstructures, the third microstructure, and the horizontal structure and the vertical axis spacing of the unit structure forming the microstructure formed by the fourth microstructure is the same. Characterized in that the microstructure formation method. As a substrate having a microstructure formed on the surface,
The microstructure includes a first microstructure and a second microstructure sequentially formed,
The first microstructure is formed by a first nano template having a plurality of first pores having a first pattern, and the second microstructure is formed in a second nano template having a plurality of second pores having a second pattern. Formed by
Substrate having a microstructure. 10. The method of claim 9,
The first pattern is a pattern that is regularly repeated, the second pattern is the same as the first pattern,
The interval between the unit structure of the microstructure on the substrate consisting of the first microstructure and the second microstructure is smaller than the interval between the first pores by the first pattern,
Substrate having a microstructure. 10. The method of claim 9,
The microstructure includes a third microstructure and a fourth microstructure sequentially formed after the first microstructure and the second microstructure are formed.
The third microstructure is formed by a third nano template having a plurality of third pores having a third pattern, and the fourth microstructure is formed in the second nano template having a plurality of fourth pores having a fourth pattern. Formed by
Substrate having a microstructure. The method of claim 11,
The first pattern is a pattern that is regularly repeated, the second pattern, the third pattern, and the fourth pattern is the same as the first pattern,
The interval between the first structure, the second microstructure, the third microstructure, and the unit structure of the microstructure on the substrate including the fourth microstructure may include the first pores due to the first pattern. Less than the gap between
Substrate having a microstructure.

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