KR101218114B1 - 플라즈마 식각 장치 - Google Patents

플라즈마 식각 장치 Download PDF

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Publication number
KR101218114B1
KR101218114B1 KR1020050071385A KR20050071385A KR101218114B1 KR 101218114 B1 KR101218114 B1 KR 101218114B1 KR 1020050071385 A KR1020050071385 A KR 1020050071385A KR 20050071385 A KR20050071385 A KR 20050071385A KR 101218114 B1 KR101218114 B1 KR 101218114B1
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KR
South Korea
Prior art keywords
substrate
electrode
plasma
region
chamber
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Expired - Lifetime
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KR1020050071385A
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English (en)
Korean (ko)
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KR20070016585A (ko
KR101218114B9 (ko
Inventor
전부일
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주성엔지니어링(주)
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Application filed by 주성엔지니어링(주) filed Critical 주성엔지니어링(주)
Priority to KR1020050071385A priority Critical patent/KR101218114B1/ko
Priority to JP2006203033A priority patent/JP5179730B2/ja
Priority to EP06118054A priority patent/EP1750294A1/en
Priority to CN2006100995903A priority patent/CN1909193B/zh
Priority to TW095128429A priority patent/TWI407501B/zh
Priority to US11/462,313 priority patent/US7951261B2/en
Publication of KR20070016585A publication Critical patent/KR20070016585A/ko
Application granted granted Critical
Publication of KR101218114B1 publication Critical patent/KR101218114B1/ko
Publication of KR101218114B9 publication Critical patent/KR101218114B9/ko
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020050071385A 2005-08-04 2005-08-04 플라즈마 식각 장치 Expired - Lifetime KR101218114B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020050071385A KR101218114B1 (ko) 2005-08-04 2005-08-04 플라즈마 식각 장치
JP2006203033A JP5179730B2 (ja) 2005-08-04 2006-07-26 プラズマエッチング装置
EP06118054A EP1750294A1 (en) 2005-08-04 2006-07-28 Plasma etching apparatus
CN2006100995903A CN1909193B (zh) 2005-08-04 2006-08-01 等离子蚀刻设备
TW095128429A TWI407501B (zh) 2005-08-04 2006-08-03 電漿蝕刻裝置
US11/462,313 US7951261B2 (en) 2005-08-04 2006-08-03 Plasma etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050071385A KR101218114B1 (ko) 2005-08-04 2005-08-04 플라즈마 식각 장치

Publications (3)

Publication Number Publication Date
KR20070016585A KR20070016585A (ko) 2007-02-08
KR101218114B1 true KR101218114B1 (ko) 2013-01-18
KR101218114B9 KR101218114B9 (ko) 2025-01-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050071385A Expired - Lifetime KR101218114B1 (ko) 2005-08-04 2005-08-04 플라즈마 식각 장치

Country Status (6)

Country Link
US (1) US7951261B2 (https=)
EP (1) EP1750294A1 (https=)
JP (1) JP5179730B2 (https=)
KR (1) KR101218114B1 (https=)
CN (1) CN1909193B (https=)
TW (1) TWI407501B (https=)

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US8338307B2 (en) 2007-02-13 2012-12-25 Fujifilm Manufacturing Europe B.V. Substrate plasma treatment using magnetic mask device
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US8197636B2 (en) * 2007-07-12 2012-06-12 Applied Materials, Inc. Systems for plasma enhanced chemical vapor deposition and bevel edge etching
US7981307B2 (en) * 2007-10-02 2011-07-19 Lam Research Corporation Method and apparatus for shaping gas profile near bevel edge
KR101432562B1 (ko) 2007-12-31 2014-08-21 (주)소슬 기판 처리 장치 및 기판 처리 방법
EP2235735B1 (en) 2008-02-01 2015-09-30 Fujifilm Manufacturing Europe B.V. Method and apparatus for plasma surface treatment of a moving substrate
US10125421B2 (en) * 2008-02-06 2018-11-13 Advanced Material Technologies, Inc. Plasma CVD apparatus, plasma CVD method, and agitating device
US8445897B2 (en) 2008-02-08 2013-05-21 Fujifilm Manufacturing Europe B.V. Method for manufacturing a multi-layer stack structure with improved WVTR barrier property
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KR20100004857A (ko) * 2008-07-03 2010-01-13 주성엔지니어링(주) 건식 에칭 장치
EP2180768A1 (en) * 2008-10-23 2010-04-28 TNO Nederlandse Organisatie voor Toegepast Wetenschappelijk Onderzoek Apparatus and method for treating an object
US8262923B2 (en) * 2008-12-17 2012-09-11 Lam Research Corporation High pressure bevel etch process
US8323523B2 (en) * 2008-12-17 2012-12-04 Lam Research Corporation High pressure bevel etch process
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
CN101783281B (zh) * 2009-01-15 2012-01-11 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体刻蚀装置及栅极的刻蚀方法
US20130098390A1 (en) * 2011-10-25 2013-04-25 Infineon Technologies Ag Device for processing a carrier and a method for processing a carrier
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
CN103889138B (zh) * 2012-12-24 2016-06-29 中国科学院微电子研究所 等离子体放电装置
US10344380B2 (en) 2013-02-11 2019-07-09 Globalwafers Co., Ltd. Liner assemblies for substrate processing systems
US10937634B2 (en) 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
TWM503056U (zh) * 2014-07-24 2015-06-11 Wen-Hsin Chiang 用於電漿反應裝置之襯套單元
US9617638B2 (en) 2014-07-30 2017-04-11 Lam Research Corporation Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
DE102015209503B4 (de) * 2015-05-22 2016-12-08 Daniel Daferner Reaktor und Verfahren zur Behandlung eines Substrats
JP2017010993A (ja) * 2015-06-17 2017-01-12 東京エレクトロン株式会社 プラズマ処理方法
US9508547B1 (en) * 2015-08-17 2016-11-29 Lam Research Corporation Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors
US10113229B2 (en) 2015-12-21 2018-10-30 Varian Semiconductor Equipment Associates, Inc. Techniques for controlling ion/neutral ratio of a plasma source
US9738977B1 (en) 2016-06-17 2017-08-22 Lam Research Corporation Showerhead curtain gas method and system for film profile modulation
CN107689326A (zh) * 2016-08-05 2018-02-13 上海新昇半导体科技有限公司 一种晶圆减薄方法及装置
WO2018119959A1 (zh) * 2016-12-29 2018-07-05 深圳市柔宇科技有限公司 干蚀刻设备
US10276364B2 (en) 2017-05-08 2019-04-30 Applied Materials, Inc. Bevel etch profile control
US10903066B2 (en) 2017-05-08 2021-01-26 Applied Materials, Inc. Heater support kit for bevel etch chamber
KR102398614B1 (ko) * 2018-11-14 2022-05-17 주식회사 원익아이피에스 기판 처리 장치 및 기판 처리 장치의 세정 방법
KR102935543B1 (ko) 2019-07-17 2026-03-05 램 리써치 코포레이션 기판 프로세싱을 위한 산화 프로파일의 변조
CN117344291A (zh) * 2023-11-23 2024-01-05 拓荆科技(上海)有限公司 薄膜沉积设备和方法

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Also Published As

Publication number Publication date
US20080173401A1 (en) 2008-07-24
US7951261B2 (en) 2011-05-31
KR20070016585A (ko) 2007-02-08
TW200710989A (en) 2007-03-16
KR101218114B9 (ko) 2025-01-10
JP2007043149A (ja) 2007-02-15
TWI407501B (zh) 2013-09-01
CN1909193B (zh) 2010-05-12
CN1909193A (zh) 2007-02-07
JP5179730B2 (ja) 2013-04-10
EP1750294A1 (en) 2007-02-07

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Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

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