KR101182383B1 - Method for Fabrication of Nano Pattern on Transparent Conductive Oxide Substrate - Google Patents

Abstract

The present invention relates to a method of forming a nano-pattern of a transparent conductive substrate, and more specifically, to form a nano-pattern on the surface of the transparent substrate or the substrate / transparent electrode interface to diffuse the light diffusely at the surface or interface to improve the luminous efficiency due to the total internal reflection phenomenon The present invention relates to a method of forming a nano pattern of a transparent conductive substrate to increase.

According to the nano-pattern forming method of the present invention, by effectively forming a nano-class pattern between the substrate and the transparent electrode layer, it is possible to increase the efficiency of the device, such as lowering the inter-layer reflection in the device to prevent luminous efficiency degradation due to total internal reflection phenomenon In addition, surface roughness that may occur at this time may be minimized, and a decrease in conductivity of the transparent electrode may be minimized.

Transparent substrate, transparent electrode, nano pattern

Description

Method for Fabrication of Nano Pattern on Transparent Conductive Oxide Substrate

The present invention relates to a method of forming a nano-pattern of a transparent conductive substrate, and more specifically, to form a nano-pattern on the surface of the transparent substrate or the substrate / transparent electrode interface to diffuse the light diffusely at the surface or interface to improve the luminous efficiency due to the total internal reflection phenomenon The present invention relates to a method of forming a nano pattern of a transparent conductive substrate to increase.

Recently, the depletion of existing fossil energy such as petroleum and coal is predicted, and as interest in the environment increases, interest in alternative energy to replace them is increasing. This problem can be solved by efficient use of energy and development of alternative energy.

Efficient use of energy is being made to replace existing low efficiency lighting and display devices with high efficiency lighting and display devices. Here, the lighting and display device having high efficiency may include a light emitting diode (LED), an organic light emitting diode (OLED), and the like. In addition, research on lighting and display devices with higher efficiency for the efficient use of energy continues.

In the field of alternative energy development, various methods such as wind power, hydropower, and geothermal energy have been continuously studied. Among them, solar cells are particularly attracting attention because of their infinite energy resources and no problems with environmental pollution.

Solar cells include a solar cell that uses steam to generate steam for rotating a turbine and a solar cell device that converts photons into electrical energy using the properties of a semiconductor. Solar cell elements are also commonly referred to as solar cell elements.

Such solar cells, lighting devices, and display devices have low optical properties, and thus, nano-pattern forming methods are used to improve optical properties. Here, the nano-pattern forming method mainly produces a nano-pattern at the interface where reflection occurs to reduce the reflectivity.

For example, the nano-pattern forming method may be used to improve the optical characteristics, and this may refer to an effect of lowering the reflectivity by forming a nano-class pattern at an interface where reflection occurs. However, when the pattern is directly formed on the transparent electrode layer, the electrical conductivity of the transparent electrode is significantly reduced due to the increase of defects due to etching and the increase of surface roughness. In addition, even when the transparent electrode layer is formed in the previously formed pattern region, surface roughness may occur, thereby reducing the electrical properties of the transparent electrode and adversely affecting subsequent processes.

Efficient use of energy is being made to replace existing low-efficiency lighting and display devices with high-efficiency LEDs and OLEDs, and efforts to improve the efficiency of these devices continue.

Accordingly, the present inventors have completed the present invention as a result of diligent efforts to solve the problems in the prior art and to produce a transparent substrate having a nano-class pattern.

After all, an object of the present invention is to provide a method capable of minimizing the increase of defects due to etching or the increase in surface roughness while nano-patterns on a transparent conductive substrate.

In order to achieve the above object, in the present invention, a nanoscale pattern is formed on a transparent substrate, and a sol solution is applied and gelled thereon to form a transparent electrode layer, or the surface of the transparent electrode layer is planarized by applying and curing an imprint resin. It provides a method of manufacturing a transparent conductive substrate having a pattern formed through the forming method.

According to an aspect of the invention preparing a transparent substrate; Forming a nano-sized pattern on the substrate; Planarizing the surface by applying a solution including a transparent electrode material on a sol on the patterned substrate; And forming a transparent electrode layer by gelling the applied transparent electrode material solution.

According to an embodiment of the present invention, a transparent electrode layer may be additionally formed on the gelled transparent electrode layer.

According to one embodiment of the invention, the step of forming a nano-pattern on the transparent substrate comprises the steps of depositing SiO ₂ on the transparent substrate; SiO ₂ Forming a fine pattern on the deposition surface; And selectively etching the formed micropattern.

According to one embodiment of the invention, the formation of the micropattern is lithography selected from the group consisting of imprint lithography, photolithography, laser interference lithography, nano-sphere lithography and E-beam lithography. It may be by law.

According to one embodiment of the invention, after the transparent electrode material gel (gel), it may be additionally carried out thermosetting or ultraviolet curing.

According to one embodiment of the invention, the gelling step of the transparent electrode layer may further comprise the step of pressing the transparent electrode layer on the sol with a wafer.

According to one embodiment of the invention, the gelling step of the transparent electrode layer may be a heat treatment at a temperature above the boiling point of the solvent used in the transparent electrode material solution on the sol (sol).

According to an embodiment of the present invention, the transparent substrate may be selected from the group consisting of quartz, glass, sapphire, lithium aluminum oxide, magnesium oxide and polyimide.

According to one embodiment of the present invention, the transparent electrode material is indium-tin-oxide (ITO), Al-doped ZnO (AZO), zinc oxide (ZnO), indium zinc oxide (IZO), F-doped SnO2 ), Ga-doped ZnO (GZO), zinc tin oxide (ZTO), gallium indium oxide (GIO), magnesium-zinc-oxide (MZO), Al-Ga ZnO (AGZO), In-Ga ZnO (IGZO), IrOx , RuOx, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO, TiO ₂ and SiN.

According to an embodiment of the present invention, the transparent electrode material solution is a solution in which the transparent electrode material is dissolved in a sol phase, a solution in which nanoparticles of the transparent electrode material are dispersed, and nanoparticles of the transparent electrode material are dispersed in a solution on the sol. It may be selected from the group consisting of a solution.

According to one embodiment of the invention, the transparent electrode material solution may be a solid content is dissolved.

According to an embodiment of the present invention, the solution containing the transparent electrode material on the sol (sol) may have a viscosity of 0.3 ~ 100cps.

According to another aspect of the invention, preparing a transparent substrate; Forming a nano-sized pattern on the substrate; Applying an imprint resin on the substrate on which the pattern is formed to planarize the surface; And curing the planarized imprint resin is provided a method of forming a nano pattern of a transparent conductive substrate.

According to an embodiment of the present invention, a transparent electrode layer may be further applied on the cured imprint resin layer.

According to one embodiment of the invention, the step of depositing SiO ₂ on a transparent substrate; Forming a fine pattern on the SiO ₂ deposition surface; And selectively etching the formed micropattern.

According to one embodiment of the invention, the formation of the micropattern may be selected from the group consisting of imprint lithography, photolithography, laser interference lithography, nano-sphere lithography and E-beam lithography. have.

According to one embodiment of the present invention, the transparent substrate may be selected from the group consisting of quartz, glass, sapphire, lithium aluminum oxide, magnesium oxide and polyimide.

According to an embodiment of the present invention, the imprint resin is nanoparticles obtained from at least one selected from the group consisting of ITO, AZO, ZnO, TiO ₂ , tungsten trioxide (WO ₃ ) _, Si, SiO ₂ , SiNx and metals. It may include.

According to one embodiment of the present invention, the imprint resin is polydimethylsiloxane (PDMS), poly methyl methacrylate (PMMA), poly vinyl chloride (PVC), poly carbonate (PC), poly vinyl acrylate (PVA) and PTFE (polytetrafluoroethylene). It may be at least one selected from the group consisting of.

According to an embodiment of the present invention, the transparent electrode layer coated on the cured imprint resin may be formed of indium-tin-oxide (ITO), Al-doped ZnO (AZO), zinc oxide (ZnO), or indium zinc oxide (IZO). , F-doped SnO2 (FTO), Ga-doped ZnO (GZO), zinc tin oxide (ZTO), gallium indium oxide (GIO), magnesium-zinc-oxide (MZO), Al-Ga ZnO (AGZO), IGZO ( In-Ga ZnO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO, TiO ₂ and SiN.

According to one embodiment of the present invention, the curing step of the imprint resin may be a heat curing or ultraviolet curing treatment.

According to one embodiment of the invention, the curing step of the imprint resin may be to pressurize the planarized imprint resin by pressing on the wafer.

According to another aspect of the present invention, an electronic device including a transparent conductive substrate having a nanopattern formed by the above method may be provided.

According to another aspect of the invention there can be provided a solar cell comprising a transparent conductive substrate having a nano-pattern formed by the above method.

According to the nano-pattern forming method of the present invention, by effectively forming a nano-class pattern between the substrate and the transparent electrode layer, it is possible to increase the efficiency of the device, such as lowering the inter-layer reflection in the device to prevent luminous efficiency degradation due to total internal reflection phenomenon In addition, surface roughness that may occur at this time may be minimized, and a decrease in conductivity of the transparent electrode may be minimized.

The nanopattern forming method of the transparent conductive substrate as in the present invention is not limited to display devices such as OLEDs, and can be applied to thin-film solar cell substrates. have.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

When a component is referred to as being "connected" or "connected" to another component, it may be directly connected to or connected to that other component, but it may be understood that other components may be present in between. Should be. On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

Hereinafter, an embodiment of a method of forming a nanopattern of a transparent conductive substrate according to the present invention will be described in detail with reference to the accompanying drawings. And duplicate description thereof will be omitted.

1.sol Gel method  Formed nano pattern Transparent electrode layer  formation

FIG. 1 schematically illustrates a method of forming a nanopattern of a transparent conductive substrate applying a transparent electrode layer by applying a planarized and gelled transparent electrode solution on a sol on a nanopattern formed on a substrate according to an embodiment of the present invention.

First, SiO ₂ is deposited on a transparent substrate 110 such as glass. As the transparent substrate, any glass can be used as long as it can be used as a transparent substrate such as quartz, sapphire, lithium aluminum oxide, magnesium oxide or polyimide. In particular, if the polymer substrate (ex: polyimide heat resistant substrate) having a high glass transition temperature (Tg) and excellent heat resistance capable of high temperature processing is more suitable for use.

Since the SiO ₂ The deposition surface 120 using imprint lithography, photolithography, laser interference lithography, nano-sphere method such as (nano-sphere) lithography, the E- beam (E-beam) lithography blood to form a fine pattern, SiO ₂ The pattern of faces is selectively etched to form an SiO ₂ pattern.

Through etching, a transparent electrode material solution on a sol is applied to the SiO ₂ surface 120 on which the nanoscale pattern is formed and planarized. The transparent electrode material included in the transparent electrode material solution on the sol may be Indium-Tin-Oxide (ITO), Al-doped ZnO (AZO), zinc oxide (ZnO), Indium zinc oxide (IZO), or FTO (F). -doped SnO2), Ga-doped ZnO (GZO), zinc tin oxide (ZTO), gallium indium oxide (GIO), magnesium-zinc-oxide (MZO), Al-Ga ZnO (AGZO), In-Ga ZnO (IGZO) ), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO, TiO ₂ , SiN and the like can be used in various ways as needed. The transparent electrode material solution may include a solution in which the transparent electrode material is dissolved in a sol phase, a solution in which nanoparticles of the transparent electrode material are dispersed, or a solution in which both are mixed, that is, nanoparticles of the transparent electrode material are dispersed in a solution on a sol. Solutions can be used.

The nanoimprint lithography process requires that the sol solution has a certain level of fluidity. Therefore, it is preferable that the sol solution has a viscosity of 0.3 to 100 cps. If the viscosity is less than 0.3cps, there is a problem that the content ratio of the solid content is too low, if the viscosity exceeds 100cps there is a problem that the nanoimprint lithography process is not well performed because the fluidity is poor.

The sol solution is a solid content dispersed in a solvent, the solid content included in the sol solution is a material to form a crystalline light scattering layer through the nanoimprint lithography step and annealing step. Solid content may be dissolved in the sol solution. In this case, the applied sol solution may have a viscosity of about 0.3 to 100 cps, and may have a suitable viscosity required in the nanoimprint lithography process described later.

The light scattering layer formed by the solid content contained in the sol solution preferably has a refractive index difference of about 0.4 or less from the transparent substrate. The refractive index difference within 0.4 can prevent a sudden change in the refractive index between the transparent substrate and the light scattering layer, and reduce the total reflection occurring at the existing ITO-air or GaN-air interface. Therefore, when the light scattering layer having the above-described refractive index is formed on the surface of the optoelectronic device, such as an LED device, it is possible to increase the intensity of light emitted from the optoelectronic device and to prevent total reflection occurring at the air interface.

Solvents usable in the sol solution include ethanol, dimethylforamide (DMF), toluene, water and the like. However, if it evaporates too easily, it is difficult to apply a sol solution to a transparent substrate or a nanoimprint lithography process. Therefore, it is preferable to use a solvent having a boiling point of at least 60 ° C or higher. In addition, the sol solution may be used by further containing diethanolamine (DEA) as a stabilizer.

In the present invention, when gelling the transparent electrode material solution on the sol, the gelation conditions and heat treatment temperature can be adjusted according to the transparent electrode material to be used. The treatment temperature during gelation allows the solvent to be removed by heat treatment at a temperature above the boiling point of the solvent used in the sol solution.

The heat treatment temperature range during the gelation may be from a temperature above the boiling point of the solvent to a range in which deformation of the mold does not occur so that the solvent can be removed. For example, when using a PDMS mold while using an ethanol solvent in a sol solution, it is preferable to heat-treat in the range of 60 to 200 degreeC.

The transparent electrode material solution is applied to the nanopattern and flattened, and then gelled by removing the solvent from the solution through the gelling method, and then heat treated or UV treated at an appropriate temperature to improve optical and electrical properties. By curing, the transparent electrode layer 130 is formed.

In the case of heat treatment as the curing treatment, residual solvents, organic substances, and the like are removed at a temperature of about 100 to 1000 ° C. (temperature at which the gel state pattern changes to a polycrystalline pattern), and the phase of the gel is converted to poly-crystal. To form a polycrystalline light scattering layer. Heat treatment conditions may vary depending on conditions such as oxygen, nitrogen, vacuum, air, etc., depending on the formation mechanism or bonding characteristics of the light scattering layer. In addition, the flow rates of these gases can also be appropriately adjusted.

When forming the transparent electrode layer through the above method, in order to have a higher flatness, a gelling process may be performed by applying pressure using a flat PDMS (Polydimethylsiloxane), Si wafer, or the like. In particular, when PDMS is used as a wafer, the solvent can be smoothly removed during the gelation process to form a high quality transparent electrode layer . This is because when the PDMS is used, the material used as the solvent may be absorbed and passed through the PDMS to escape to the outside, so that the solvent is easier to remove than the Si and quartz molds.

FIG. 2 schematically illustrates a method of forming a nanopattern of a transparent conductive substrate including pressing and gelling a transparent electrode layer 130 on a sol using a wafer 150 in an embodiment of the present invention according to FIG. 1. . When pressing the transparent electrode layer, the pressure range is about 1 ~ 20atm to perform a pressing process.

In general, the transparent electrode layer formed by using the sol-gel method as described above does not have excellent conductivity, and thus, a transparent electrode layer using a conventional method such as sputtering, that is, a transparent electrode layer having a higher electrical conductivity is added. By forming, it is possible to improve the transmittance by reducing the reflection due to the difference in refractive index that may occur at the interface of the dissimilar material.

FIG. 3 schematically illustrates a method of forming a NATO pattern of a transparent conductive substrate that additionally forms a transparent electrode layer 140 on a transparent electrode layer 130 formed by gelation of a transparent electrode solution on a sol according to an embodiment of the present invention. .

2. Imprint  Nano pattern using resin Transparent electrode layer  formation

FIG. 4 schematically illustrates a method of forming a nanopattern on a transparent conductive substrate by applying and planarizing the imprint resin 125 onto a nanopattern formed on the substrate 110 and then curing the imprint resin 125.

First, SiO ₂ is deposited on a transparent substrate 110 such as glass in the same manner as in 1., and a pattern is formed thereon.

SiO _{2 with} nano-pattern formed through etching Imprint resin is applied to the surface 120 and planarized to cure the resin. Curing of the resin can be performed by ultraviolet curing or thermosetting.

The imprint resin may have a flexibility selected from the group consisting of polydimethylsiloxane (PDMS), poly methyl methacrylate (PMMA), poly vinyl chloride (PVC), poly carbonate (PC), poly vinyl acrylate (PVA), and polytetrafluoroethylene (PTFE). It is possible to use high molecular materials. Commercially available resins include Chemoptics' ExpatternTM series, benzyl methacrylate monomer base resins and various resins.

As the imprint resin, a resin including nanoparticles may be used, and the nanoparticles that may be included include oxides such as ITO, AZO, ZnO, TiO2, WO ₃ (tungsten trioxide) _, Si, SiO ₂ , and SiNx, Substances that can be produced in the form of particles having a nanoscale size such as metal may be used. The solids contained in the nanoparticle solution do not require a phase change and can therefore be selected more widely in the sol solution.

When the imprint resin 125 is cured, a flat substrate such as the silicon wafer 150 may be laminated, pressurized and cured, and the flatness of the imprint resin may be increased by removing the wafer.

FIG. 5 schematically illustrates a method of forming a nanopattern of a transparent conductive substrate including pressing the wafer 150 and curing the imprint resin in one embodiment of the present invention.

By additionally forming a transparent electrode layer having high electrical conductivity on the imprint resin formed in this way, it is possible to reduce the reflection due to the difference in refractive index that may occur at the interface of the dissimilar material, thereby obtaining a gain in transmittance improvement.

FIG. 6 schematically illustrates a method of forming a nanopattern of a transparent conductive substrate in which an imprint resin 125 is coated on a nanopattern formed on the substrate 110, and then cured, and then the transparent electrode layer 140 is coated.

FIG. 7 illustrates a nanostructure of a transparent conductive substrate including pressing the wafer 150 to cure the imprint resin 125 and stacking the transparent electrode layer 140 thereon. The pattern forming method is schematically illustrated.

Hereinafter, the present invention will be described in more detail with reference to Examples. It should be understood, however, that these examples are for illustrative purposes only and are not to be construed as limiting the scope of the present invention.

Example  1: sol-gel Imprint  Including nanostructures using the method Transparent electrode layer  formation

First, a glass substrate was prepared as a transparent substrate and SiO ₂ was deposited thereon. SiO ₂ A nanoscale micropattern was formed on the deposited surface using imprint lithography. The nanopattern was formed by selectively etching the SiO ₂ surface on which the micropattern was formed.

SiO _{2 with} nanopatterns An ITO sol solution was applied to the deposited surface, flattened, gelled by removing the solvent, and heat treated to form an ITO layer.

Flatness was increased by depositing and removing flat PDMS wafers in the formation of the ITO gel layer. An ITO layer was further formed on the ITO layer by sputtering.

Example  2: containing nanoparticles Imprint  Nano pattern using resin Transparent electrode layer  formation

SiO ₂ on the glass substrate in the same manner as in Example 1 A pattern was formed. The flatness of the imprint resin surface was raised by apply | coating resin containing ITO nanoparticles on the pattern, depositing a silicon wafer, hardening resin, and removing a wafer. A transparent conductive substrate was manufactured by forming an ITO layer on a flat imprint resin surface formed by the above process by a sputtering method.

Figure 8 shows an example of the nano-pattern formed by the imprint method and the resulting change in transmittance graph. 8 shows a result of forming a transmittance improvement pattern on a glass substrate with a nanoimprint resin on a glass substrate, and the graph on the right is a change in transmittance graph, and the blue line shows the transmittance of a glass substrate without a pattern and a red color. The line shows the transmittance of the glass substrate having the transmittance improving pattern formed from the nanoimprint resin, and the green dotted line shows the transmittance when the pattern is formed on both sides of the glass. As can be seen through the right graph of Figure 8 it can be seen that the transmittance is improved depending on the degree of formation of the pattern on the glass.

As described above, the present invention does not form a nanopattern directly on the transparent electrode layer while forming a nanoscale micropattern on the transparent conductive substrate, thereby suppressing reflection due to the difference in refractive index between the substrate and the transparent electrode layer, thereby providing photonic crystal characteristics. By minimizing the optical loss and applying the scattering effect, it is possible to prevent the wavelength change of light according to the viewing angle, and finally improve the optical characteristics of the device.

The foregoing describes specific parts of the present invention in detail, and it will be apparent to those skilled in the art that these specific descriptions are merely preferred embodiments, and thus the scope of the present invention is not limited thereto. . It is therefore intended that the scope of the invention be defined by the claims appended hereto and their equivalents.

FIG. 1 schematically illustrates a method of forming a nanopattern of a transparent conductive substrate applying a transparent electrode layer by applying a planarized and gelled transparent electrode solution on a sol on a nanopattern formed on a substrate according to an embodiment of the present invention.

FIG. 2 schematically illustrates a method of forming a nanopattern of a transparent conductive substrate including pressing and gelling a transparent electrode layer on a sol using a wafer in an embodiment of the present invention according to FIG. 1.

FIG. 3 schematically illustrates a method of forming a NATO pattern of a transparent conductive substrate to additionally form a transparent electrode layer on a transparent electrode layer formed by gelation of a transparent electrode solution on a sol according to an embodiment of the present invention.

FIG. 4 schematically illustrates a method of forming a nanopattern on a transparent conductive substrate by applying and planarizing an imprint resin onto a nanopattern formed on a substrate and then curing the imprint resin.

FIG. 5 schematically illustrates a method of forming a nanopattern of a transparent conductive substrate including pressing the wafer and curing the imprint resin in one embodiment of the present invention.

FIG. 6 schematically illustrates a method of forming a nanopattern of a transparent conductive substrate in which an imprint resin is coated on a nanopattern formed on a substrate, and then cured, followed by coating a transparent electrode layer.

FIG. 7 schematically illustrates a method of forming a nanopattern of a transparent conductive substrate including the step of hardening the imprint resin while pressing the wafer in accordance with an embodiment of the present invention.

Figure 8 shows an example of the nano-pattern formed by the imprint method and the resulting change in the transmittance graph. The photograph on the left shows the result of forming the transmittance improvement pattern on the glass substrate with the resin for nanoimprint, and the graph on the right is the transmittance change graph.

* Explanation of the main symbols in the drawings *

110: transparent substrate

120: SiO ₂ layer

125: imprint resin

130: gelled transparent electrode layer

140: transparent electrode layer

150: wafer

Claims (24)

Preparing a transparent substrate; Forming a nano-sized pattern on the substrate; Planarizing the surface by applying a solution including a transparent electrode material on a sol on the patterned substrate; And And forming a transparent electrode layer by gelling the coated transparent electrode material solution. The method of claim 1, The nano-pattern forming method of the transparent conductive substrate, characterized in that further forming a transparent electrode layer on the gelled transparent electrode layer. The method of claim 1, Forming a nano pattern on the transparent substrate Depositing SiO ₂ on the transparent substrate; Forming a fine pattern on the SiO ₂ deposition surface; And A method of forming a nano pattern of a transparent conductive substrate, characterized in that the step of selectively etching the formed fine pattern. The method of claim 3, The formation of the micropattern is transparent conductive, characterized in that by lithography method selected from the group consisting of imprint lithography, photolithography, laser interference lithography, nano-sphere lithography and E-beam lithography. Nano pattern formation method of the substrate. The method of claim 1, After the transparent electrode material gel (gel), the nano-pattern forming method of the transparent conductive substrate, characterized in that for performing additional heat curing or ultraviolet curing. The method of claim 1, The gelation of the transparent electrode layer further comprises the step of pressing the transparent electrode layer on the sol with a wafer. The method of claim 1, wherein the gelling of the transparent electrode layer is performed at a temperature higher than or equal to a boiling point of a solvent used in the transparent electrode material solution on a sol. The method of claim 1, The transparent substrate is a method of forming a nano pattern of a transparent conductive substrate, characterized in that selected from the group consisting of quartz (quartz), glass, sapphire, lithium aluminum oxide, magnesium oxide and polyimide. The method of claim 1, wherein the transparent electrode material is Indium-Tin-Oxide (ITO), Al-doped ZnO (AZO), zinc oxide (ZnO), Indium zinc oxide (IZO), F-doped SnO2 (FTO), GZO (Ga-doped ZnO), zinc tin oxide (ZTO), gallium indium oxide (GIO), magnesium-zinc-oxide (MZO), Al-Ga ZnO (AGZO), In-Ga ZnO (IGZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO, TiO ₂ and SiN The method of forming a nano pattern of a transparent conductive substrate, characterized in that at least one selected from the group consisting of. The method of claim 1, The transparent electrode material solution is selected from the group consisting of a solution in which the transparent electrode material is dissolved in a sol phase, a solution in which nanoparticles of the transparent electrode material are dispersed, and a solution in which nanoparticles of the transparent electrode material are dispersed in a solution on the sol. Nano pattern forming method of the transparent conductive substrate to be. delete The method of claim 1, wherein the solution including the transparent electrode material on the sol has a viscosity of 0.3 to 100 cps. Preparing a transparent substrate; Forming a nano-sized pattern on the substrate; Applying an imprint resin on the substrate on which the pattern is formed to planarize the surface; And And curing the planarized imprint resin. 14. The method of claim 13, The nano-pattern forming method of the transparent conductive substrate, characterized in that further applying a transparent electrode layer on the cured imprint resin layer. 14. The method of claim 13, Forming a nano pattern on the transparent substrate Depositing SiO ₂ on the transparent substrate; SiO ₂ Forming a fine pattern on the deposition surface; And A method of forming a nano pattern of a transparent conductive substrate, characterized in that the step of selectively etching the formed fine pattern. 16. The method of claim 15, The formation of the micropattern is transparent conductive, characterized in that by lithography method selected from the group consisting of imprint lithography, photolithography, laser interference lithography, nano-sphere lithography and E-beam lithography. Nano pattern formation method of the substrate. 14. The method of claim 13, The transparent substrate is a method of forming a nano pattern of a transparent conductive substrate, characterized in that selected from the group consisting of quartz (quartz), glass, sapphire, lithium aluminum oxide, magnesium oxide and polyimide. 14. The method of claim 13, The imprint resin is transparent, characterized in that it comprises nanoparticles obtained from at least one selected from the group consisting of ITO, AZO, ZnO, TiO ₂ , tungsten trioxide (WO ₃ ) _, Si, SiO ₂ , SiNx and metals. Nano pattern formation method of a conductive substrate. The method of claim 13, wherein the imprint resin is selected from the group consisting of polydimethylsiloxane (PDMS), poly methyl methacrylate (PMMA), poly vinyl chloride (PVC), poly carbonate (PC), poly vinyl acrylate (PVA), and polytetrafluoroethylene (PTFE). Nano pattern forming method of a transparent conductive substrate, characterized in that at least one selected. The method of claim 14, The transparent electrode layer coated on the cured imprint resin may be indium-tin-oxide (ITO), al-doped znO (AZO), zinc oxide (ZnO), indium zinc oxide (IZO), or F-doped SnO2 (FTO). Ga-doped ZnO (GZO), zinc tin oxide (ZTO), gallium indium oxide (GIO), magnesium-zinc-oxide (MZO), Al-Ga ZnO (AGZO), In-Ga ZnO (IGZO), IrOx, RuOx , RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO, TiO ₂ and SiN at least one selected from the group consisting of. The method of claim 13, wherein the curing of the imprint resin comprises thermal curing or ultraviolet curing. 14. The method of claim 13, The hardening step of the imprint resin is a nano-pattern forming method of the transparent conductive substrate, characterized in that for curing by pressing the flattened imprint resin to the wafer. An electronic device comprising a transparent conductive substrate having a nano-pattern formed by the method according to any one of claims 1 to 10 and 12 to 22. A solar cell comprising a transparent conductive substrate having a nanopattern formed by the method according to any one of claims 1 to 10 and 12 to 22.

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