KR101165615B1 - 복수기판 처리장치 - Google Patents

복수기판 처리장치 Download PDF

Info

Publication number
KR101165615B1
KR101165615B1 KR1020080125368A KR20080125368A KR101165615B1 KR 101165615 B1 KR101165615 B1 KR 101165615B1 KR 1020080125368 A KR1020080125368 A KR 1020080125368A KR 20080125368 A KR20080125368 A KR 20080125368A KR 101165615 B1 KR101165615 B1 KR 101165615B1
Authority
KR
South Korea
Prior art keywords
substrate
gas
shower head
center
substrate support
Prior art date
Application number
KR1020080125368A
Other languages
English (en)
Korean (ko)
Other versions
KR20100066874A (ko
Inventor
황희
허필웅
Original Assignee
주식회사 원익아이피에스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 원익아이피에스 filed Critical 주식회사 원익아이피에스
Priority to KR1020080125368A priority Critical patent/KR101165615B1/ko
Priority to PCT/KR2009/007004 priority patent/WO2010067974A2/fr
Priority to TW098141928A priority patent/TWI382877B/zh
Publication of KR20100066874A publication Critical patent/KR20100066874A/ko
Application granted granted Critical
Publication of KR101165615B1 publication Critical patent/KR101165615B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020080125368A 2008-12-10 2008-12-10 복수기판 처리장치 KR101165615B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020080125368A KR101165615B1 (ko) 2008-12-10 2008-12-10 복수기판 처리장치
PCT/KR2009/007004 WO2010067974A2 (fr) 2008-12-10 2009-11-26 Appareil de traitement de multiples substrats
TW098141928A TWI382877B (zh) 2008-12-10 2009-12-08 處理多個基板的裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080125368A KR101165615B1 (ko) 2008-12-10 2008-12-10 복수기판 처리장치

Publications (2)

Publication Number Publication Date
KR20100066874A KR20100066874A (ko) 2010-06-18
KR101165615B1 true KR101165615B1 (ko) 2012-07-17

Family

ID=42243165

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080125368A KR101165615B1 (ko) 2008-12-10 2008-12-10 복수기판 처리장치

Country Status (3)

Country Link
KR (1) KR101165615B1 (fr)
TW (1) TWI382877B (fr)
WO (1) WO2010067974A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10815569B2 (en) 2015-08-28 2020-10-27 Samsung Electronics Co., Ltd. Shower head of combinatorial spatial atomic layer deposition apparatus
US10844491B2 (en) 2015-10-30 2020-11-24 Samsung Electronics Co., Ltd. Gas supply unit and substrate processing system

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101108879B1 (ko) 2009-08-31 2012-01-30 주식회사 원익아이피에스 가스분사장치 및 이를 이용한 기판처리장치
KR101625078B1 (ko) * 2009-09-02 2016-05-27 주식회사 원익아이피에스 가스분사장치 및 이를 이용한 기판처리장치
KR101589255B1 (ko) * 2010-07-14 2016-01-27 주식회사 원익아이피에스 박막 증착 장치
KR101804127B1 (ko) * 2011-01-28 2018-01-10 주식회사 원익아이피에스 박막 증착 방법
CN103074602A (zh) * 2012-01-21 2013-05-01 光达光电设备科技（嘉兴）有限公司 化学气相沉积设备的反应腔室
TW201437421A (zh) * 2013-02-20 2014-10-01 Applied Materials Inc 用於旋轉料架原子層沉積之裝置以及方法
US9464353B2 (en) * 2013-11-21 2016-10-11 Wonik Ips Co., Ltd. Substrate processing apparatus
KR102058057B1 (ko) * 2015-02-17 2020-01-23 주식회사 원익아이피에스 웨이퍼 처리장치 및 방법
KR102293135B1 (ko) * 2016-06-01 2021-08-26 주성엔지니어링(주) 기판 처리장치
KR102072575B1 (ko) * 2019-01-31 2020-02-03 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
KR102205349B1 (ko) * 2020-01-28 2021-01-20 주성엔지니어링(주) 기판 처리 장치
FI130861B1 (fi) * 2020-10-12 2024-04-26 Beneq Oy Atomikerroskasvatuslaitteisto ja menetelmä
CN113725061A (zh) * 2021-09-01 2021-11-30 长鑫存储技术有限公司 晶圆处理装置及方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100722848B1 (ko) * 2006-07-19 2007-05-30 주식회사 아이피에스 박막증착장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100532949B1 (ko) * 2003-03-12 2005-12-02 주식회사 하이닉스반도체 플라즈마 어시스티브 배치 타입 원자층증착 장치
KR20060025337A (ko) * 2004-09-16 2006-03-21 삼성전자주식회사 원자층 증착 장치
KR101324208B1 (ko) * 2007-02-23 2013-11-06 주성엔지니어링(주) 기판 처리 장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100722848B1 (ko) * 2006-07-19 2007-05-30 주식회사 아이피에스 박막증착장치

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10815569B2 (en) 2015-08-28 2020-10-27 Samsung Electronics Co., Ltd. Shower head of combinatorial spatial atomic layer deposition apparatus
US10844491B2 (en) 2015-10-30 2020-11-24 Samsung Electronics Co., Ltd. Gas supply unit and substrate processing system

Also Published As

Publication number Publication date
WO2010067974A3 (fr) 2010-08-05
WO2010067974A2 (fr) 2010-06-17
KR20100066874A (ko) 2010-06-18
TW201029748A (en) 2010-08-16
TWI382877B (zh) 2013-01-21

Similar Documents

Publication Publication Date Title
KR101165615B1 (ko) 복수기판 처리장치
KR101095687B1 (ko) 8분기 구조를 갖는 원자층 증착 장치
KR101473334B1 (ko) 원자층 증착 장치
KR20180002104A (ko) 기판 처리 장치 및 그것을 이용한 박막 증착 방법
KR101937692B1 (ko) 기판 지지 장치 및 기판 처리 장치
KR20070088184A (ko) 샤워헤드 및 이를 구비한 원자층 증착설비
KR20100003536A (ko) 원자층 증착 장치
KR20090131384A (ko) 가스분사조립체 및 이를 이용한 박막증착장치
KR101239109B1 (ko) 균일한 막 증착을 위한 챔버
KR101550887B1 (ko) 복수기판 처리장치
KR20120045149A (ko) 원자층 증착장치의 샤워헤드
KR101028407B1 (ko) 원자층 증착장치
KR101983334B1 (ko) 박막 증착장치 및 박막 증착방법
KR100980397B1 (ko) 유기금속가스의 농도분포조절이 가능한 화학기상증착반응기
KR101931655B1 (ko) 기판 처리 장치
KR101114248B1 (ko) 균일한 막 증착을 위한 챔버 및 샤워 헤드
KR20130035039A (ko) 가스분사장치, 및 이를 포함하는 기판 처리장치
KR102193667B1 (ko) 기판 처리 장치
KR20140134879A (ko) 원자층 박막 증착장치
KR20140032466A (ko) 기판 처리 장치
KR20130068718A (ko) 가스분사장치 및 이를 구비하는 기판처리장치
KR20070002218A (ko) 화학기상증착장치
KR20110021624A (ko) 원료 물질 공급 장치 및 이를 구비하는 기판 처리 장치
KR101869948B1 (ko) 가스분사장치 및 이를 구비하는 기판처리장치
KR20060100961A (ko) 샤워헤드 및 이를 구비한 원자층 증착설비

Legal Events

Date Code Title Description
A201 Request for examination
N231 Notification of change of applicant
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
J201 Request for trial against refusal decision
AMND Amendment
B701 Decision to grant
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20150604

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20160608

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20170621

Year of fee payment: 6