KR101159337B1 - 마스크 수정을 위한 전자 빔 프로세싱 - Google Patents

마스크 수정을 위한 전자 빔 프로세싱 Download PDF

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Publication number
KR101159337B1
KR101159337B1 KR1020057012088A KR20057012088A KR101159337B1 KR 101159337 B1 KR101159337 B1 KR 101159337B1 KR 1020057012088 A KR1020057012088 A KR 1020057012088A KR 20057012088 A KR20057012088 A KR 20057012088A KR 101159337 B1 KR101159337 B1 KR 101159337B1
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KR
South Korea
Prior art keywords
substrate
electron beam
gallium
transparency
quartz
Prior art date
Application number
KR1020057012088A
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English (en)
Korean (ko)
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KR20050094417A (ko
Inventor
다이앤 케이. 스튜어트
제이. 데이비드 주니어. 케이시
존 베티
크리스찬 알. 뮤실
스티븐 버거
시브렌 제이. 사이브란다이
Original Assignee
에프이아이 컴파니
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Application filed by 에프이아이 컴파니 filed Critical 에프이아이 컴파니
Publication of KR20050094417A publication Critical patent/KR20050094417A/ko
Application granted granted Critical
Publication of KR101159337B1 publication Critical patent/KR101159337B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
KR1020057012088A 2003-01-16 2004-01-16 마스크 수정을 위한 전자 빔 프로세싱 KR101159337B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US44044203P 2003-01-16 2003-01-16
US60/440,442 2003-01-16
PCT/US2004/001268 WO2004066027A2 (fr) 2003-01-16 2004-01-16 Traitement par faisceaux d'electrons pour la reparation de masques

Publications (2)

Publication Number Publication Date
KR20050094417A KR20050094417A (ko) 2005-09-27
KR101159337B1 true KR101159337B1 (ko) 2012-06-22

Family

ID=32771816

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057012088A KR101159337B1 (ko) 2003-01-16 2004-01-16 마스크 수정을 위한 전자 빔 프로세싱

Country Status (6)

Country Link
US (1) US7727681B2 (fr)
EP (1) EP1586007B1 (fr)
JP (1) JP4550801B2 (fr)
KR (1) KR101159337B1 (fr)
CN (1) CN1739066B (fr)
WO (1) WO2004066027A2 (fr)

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US20060199082A1 (en) * 2005-03-01 2006-09-07 International Business Machines Corporation Mask repair
JP5600371B2 (ja) * 2006-02-15 2014-10-01 エフ・イ−・アイ・カンパニー 荷電粒子ビーム処理のための保護層のスパッタリング・コーティング
DE102008037951B4 (de) * 2008-08-14 2018-02-15 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen von mit Gallium verunreinigten Schichten
DE102008037943B4 (de) * 2008-08-14 2018-04-26 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen und Halbleiterbauelement mit einer Struktur geätzt mittels eines derartigen Verfahrens
US8778804B2 (en) * 2009-01-30 2014-07-15 Fei Company High selectivity, low damage electron-beam delineation etch
US8206691B2 (en) * 2009-11-04 2012-06-26 Conopco, Inc. Sunscreen composition with fatty acid alkanolamides
KR101068131B1 (ko) * 2009-12-29 2011-09-28 한국화학연구원 광양극 양자점 감응형 태양전지 및 광양극 제조방법
US8999610B2 (en) * 2012-12-31 2015-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography mask repairing process
US9123506B2 (en) 2013-06-10 2015-09-01 Fei Company Electron beam-induced etching
KR102235616B1 (ko) 2014-08-14 2021-04-02 삼성전자주식회사 포토마스크, 포토마스크 제조방법, 및 포토마스크를 이용한 반도체 소자 제조방법
JP2017020106A (ja) 2015-07-02 2017-01-26 エフ・イ−・アイ・カンパニー 高スループット・パターン形成のための適応ビーム電流
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
DE102018207882A1 (de) * 2018-05-18 2019-11-21 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Analyse eines Elements eines Photolithographieprozesses mit Hilfe eines Transformationsmodells
JP7461923B2 (ja) * 2018-07-09 2024-04-04 ラム リサーチ コーポレーション 電子励起原子層エッチング

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KR19990085563A (ko) * 1998-05-19 1999-12-06 와그너 알프레드 마스크 결함 수정 방법
KR20000067541A (ko) * 1999-04-29 2000-11-25 윤종용 포토마스크의 결함 수정방법
JP3238550B2 (ja) * 1992-11-02 2001-12-17 株式会社東芝 構造体の欠陥修正方法

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Publication number Priority date Publication date Assignee Title
JP3238550B2 (ja) * 1992-11-02 2001-12-17 株式会社東芝 構造体の欠陥修正方法
KR19980039473A (ko) * 1996-11-27 1998-08-17 김광호 포토마스크의 결함 수정방법
KR19990085563A (ko) * 1998-05-19 1999-12-06 와그너 알프레드 마스크 결함 수정 방법
KR20000067541A (ko) * 1999-04-29 2000-11-25 윤종용 포토마스크의 결함 수정방법

Also Published As

Publication number Publication date
CN1739066B (zh) 2010-06-02
WO2004066027A3 (fr) 2005-06-30
EP1586007B1 (fr) 2012-04-11
KR20050094417A (ko) 2005-09-27
US7727681B2 (en) 2010-06-01
EP1586007A4 (fr) 2009-06-10
JP4550801B2 (ja) 2010-09-22
JP2006515937A (ja) 2006-06-08
US20040226814A1 (en) 2004-11-18
CN1739066A (zh) 2006-02-22
EP1586007A2 (fr) 2005-10-19
WO2004066027A2 (fr) 2004-08-05

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