KR101159337B1 - 마스크 수정을 위한 전자 빔 프로세싱 - Google Patents

마스크 수정을 위한 전자 빔 프로세싱 Download PDF

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Publication number
KR101159337B1
KR101159337B1 KR1020057012088A KR20057012088A KR101159337B1 KR 101159337 B1 KR101159337 B1 KR 101159337B1 KR 1020057012088 A KR1020057012088 A KR 1020057012088A KR 20057012088 A KR20057012088 A KR 20057012088A KR 101159337 B1 KR101159337 B1 KR 101159337B1
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KR
South Korea
Prior art keywords
substrate
electron beam
gallium
transparency
quartz
Prior art date
Application number
KR1020057012088A
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English (en)
Korean (ko)
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KR20050094417A (ko
Inventor
다이앤 케이. 스튜어트
제이. 데이비드 주니어. 케이시
존 베티
크리스찬 알. 뮤실
스티븐 버거
시브렌 제이. 사이브란다이
Original Assignee
에프이아이 컴파니
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Application filed by 에프이아이 컴파니 filed Critical 에프이아이 컴파니
Publication of KR20050094417A publication Critical patent/KR20050094417A/ko
Application granted granted Critical
Publication of KR101159337B1 publication Critical patent/KR101159337B1/ko

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72Repair or correction of mask defects
    • G03F1/74Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3174Etching microareas
    • H01J2237/31742Etching microareas for repairing masks
    • H01J2237/31744Etching microareas for repairing masks introducing gas in vicinity of workpiece

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Drying Of Semiconductors (AREA)
KR1020057012088A 2003-01-16 2004-01-16 마스크 수정을 위한 전자 빔 프로세싱 KR101159337B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US44044203P 2003-01-16 2003-01-16
US60/440,442 2003-01-16
PCT/US2004/001268 WO2004066027A2 (fr) 2003-01-16 2004-01-16 Traitement par faisceaux d'electrons pour la reparation de masques

Publications (2)

Publication Number Publication Date
KR20050094417A KR20050094417A (ko) 2005-09-27
KR101159337B1 true KR101159337B1 (ko) 2012-06-22

Family

ID=32771816

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057012088A KR101159337B1 (ko) 2003-01-16 2004-01-16 마스크 수정을 위한 전자 빔 프로세싱

Country Status (6)

Country Link
US (1) US7727681B2 (fr)
EP (1) EP1586007B1 (fr)
JP (1) JP4550801B2 (fr)
KR (1) KR101159337B1 (fr)
CN (1) CN1739066B (fr)
WO (1) WO2004066027A2 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060199082A1 (en) * 2005-03-01 2006-09-07 International Business Machines Corporation Mask repair
JP5600371B2 (ja) * 2006-02-15 2014-10-01 エフ・イ−・アイ・カンパニー 荷電粒子ビーム処理のための保護層のスパッタリング・コーティング
DE102008037951B4 (de) * 2008-08-14 2018-02-15 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen von mit Gallium verunreinigten Schichten
DE102008037943B4 (de) * 2008-08-14 2018-04-26 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen und Halbleiterbauelement mit einer Struktur geätzt mittels eines derartigen Verfahrens
US8778804B2 (en) * 2009-01-30 2014-07-15 Fei Company High selectivity, low damage electron-beam delineation etch
US8206691B2 (en) * 2009-11-04 2012-06-26 Conopco, Inc. Sunscreen composition with fatty acid alkanolamides
KR101068131B1 (ko) * 2009-12-29 2011-09-28 한국화학연구원 광양극 양자점 감응형 태양전지 및 광양극 제조방법
US8999610B2 (en) * 2012-12-31 2015-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography mask repairing process
US9123506B2 (en) 2013-06-10 2015-09-01 Fei Company Electron beam-induced etching
KR102235616B1 (ko) 2014-08-14 2021-04-02 삼성전자주식회사 포토마스크, 포토마스크 제조방법, 및 포토마스크를 이용한 반도체 소자 제조방법
JP2017020106A (ja) 2015-07-02 2017-01-26 エフ・イ−・アイ・カンパニー 高スループット・パターン形成のための適応ビーム電流
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
DE102018207882A1 (de) * 2018-05-18 2019-11-21 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Analyse eines Elements eines Photolithographieprozesses mit Hilfe eines Transformationsmodells
JP7461923B2 (ja) * 2018-07-09 2024-04-04 ラム リサーチ コーポレーション 電子励起原子層エッチング

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980039473A (ko) * 1996-11-27 1998-08-17 김광호 포토마스크의 결함 수정방법
KR19990085563A (ko) * 1998-05-19 1999-12-06 와그너 알프레드 마스크 결함 수정 방법
KR20000067541A (ko) * 1999-04-29 2000-11-25 윤종용 포토마스크의 결함 수정방법
JP3238550B2 (ja) * 1992-11-02 2001-12-17 株式会社東芝 構造体の欠陥修正方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639301B2 (en) * 1985-04-24 1999-05-04 Micrion Corp Focused ion beam processing
US5035787A (en) * 1987-07-22 1991-07-30 Microbeam, Inc. Method for repairing semiconductor masks and reticles
JP2650930B2 (ja) * 1987-11-24 1997-09-10 株式会社日立製作所 超格子構作の素子製作方法
US5104684A (en) * 1990-05-25 1992-04-14 Massachusetts Institute Of Technology Ion beam induced deposition of metals
US5149974A (en) * 1990-10-29 1992-09-22 International Business Machines Corporation Gas delivery for ion beam deposition and etching
US5807650A (en) * 1992-03-24 1998-09-15 Kabushiki Kaisha Toshiba Photo mask and apparatus for repairing photo mask
US5429730A (en) 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
US5435850A (en) * 1993-09-17 1995-07-25 Fei Company Gas injection system
US6159641A (en) * 1993-12-16 2000-12-12 International Business Machines Corporation Method for the repair of defects in lithographic masks
US5851413A (en) * 1996-06-19 1998-12-22 Micrion Corporation Gas delivery systems for particle beam processing
JP3388421B2 (ja) * 1996-11-26 2003-03-24 大日本印刷株式会社 フォトマスクの残留欠陥修正方法
US6042738A (en) * 1997-04-16 2000-03-28 Micrion Corporation Pattern film repair using a focused particle beam system
US6440615B1 (en) * 1999-02-09 2002-08-27 Nikon Corporation Method of repairing a mask with high electron scattering and low electron absorption properties
JP3848006B2 (ja) * 1999-03-15 2006-11-22 株式会社東芝 マスク欠陥修正方法
US6368753B1 (en) * 1999-08-27 2002-04-09 Agere Systems Guardian Corp. Mask repair
US6300631B1 (en) * 1999-10-07 2001-10-09 Lucent Technologies Inc. Method of thinning an electron transparent thin film membrane on a TEM grid using a focused ion beam
US6366753B1 (en) * 1999-11-11 2002-04-02 Heidelberger Druckmaschinen Ag Charger wire tensioning mounting mechanism and method of using
US6346352B1 (en) * 2000-02-25 2002-02-12 International Business Machines Corporation Quartz defect removal utilizing gallium staining and femtosecond ablation
US6322672B1 (en) * 2000-03-10 2001-11-27 Fei Company Method and apparatus for milling copper interconnects in a charged particle beam system
JP3974319B2 (ja) * 2000-03-30 2007-09-12 株式会社東芝 エッチング方法
US6361904B1 (en) * 2000-06-14 2002-03-26 Taiwan Semiconductor Manufacturing Company Method for repairing the shifter layer of an alternating phase shift mask
US20030000921A1 (en) * 2001-06-29 2003-01-02 Ted Liang Mask repair with electron beam-induced chemical etching
JP2004537758A (ja) * 2001-07-27 2004-12-16 エフ・イ−・アイ・カンパニー 電子ビーム処理
DE10156366B4 (de) * 2001-11-16 2007-01-11 Infineon Technologies Ag Reflexionsmaske und Verfahren zur Herstellung der Reflexionsmaske
JP3626453B2 (ja) * 2001-12-27 2005-03-09 株式会社東芝 フォトマスクの修正方法及び修正装置
US6777137B2 (en) * 2002-07-10 2004-08-17 International Business Machines Corporation EUVL mask structure and method of formation
US7504182B2 (en) * 2002-09-18 2009-03-17 Fei Company Photolithography mask repair
JP2004177682A (ja) * 2002-11-27 2004-06-24 Seiko Instruments Inc 複合荷電粒子ビームによるフォトマスク修正方法及びその装置
JP4438618B2 (ja) * 2004-12-08 2010-03-24 エスアイアイ・ナノテクノロジー株式会社 フォトマスクの黒欠陥修正方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3238550B2 (ja) * 1992-11-02 2001-12-17 株式会社東芝 構造体の欠陥修正方法
KR19980039473A (ko) * 1996-11-27 1998-08-17 김광호 포토마스크의 결함 수정방법
KR19990085563A (ko) * 1998-05-19 1999-12-06 와그너 알프레드 마스크 결함 수정 방법
KR20000067541A (ko) * 1999-04-29 2000-11-25 윤종용 포토마스크의 결함 수정방법

Also Published As

Publication number Publication date
CN1739066B (zh) 2010-06-02
WO2004066027A3 (fr) 2005-06-30
EP1586007B1 (fr) 2012-04-11
KR20050094417A (ko) 2005-09-27
US7727681B2 (en) 2010-06-01
EP1586007A4 (fr) 2009-06-10
JP4550801B2 (ja) 2010-09-22
JP2006515937A (ja) 2006-06-08
US20040226814A1 (en) 2004-11-18
CN1739066A (zh) 2006-02-22
EP1586007A2 (fr) 2005-10-19
WO2004066027A2 (fr) 2004-08-05

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