KR101157825B1 - Ultra-wideband transition structure for surface mountable components and application module thereof - Google Patents

Abstract

A surface mount ultra wide band transition structure and its application module are disclosed. According to one or more exemplary embodiments, a surface mount type ultra wide band transition structure includes: a first signal line formed at one surface of a substrate and having one end connected to a signal line of a microstrip line; First and second ground lines spaced apart from each other in parallel on the same plane as the first signal line; And a width of one end connected to the ground plane of the microstrip line on the other side of the substrate and formed along the two ground lines and adjacent to the microstrip line is greater than the width of the other end and through at least one via. The first and second ground planes may be connected to the first and second ground lines. Further, the first and second ground planes may be connected to the first signal line on one surface of the substrate, and may be spaced apart from each other at a predetermined interval vertically through the vias. A second signal line vertically connected to a signal line of a mother circuit board which is located; And third and fourth grounds which are formed to be symmetrical in parallel with the second signal line at predetermined intervals and are connected to each of the first and second ground lines and vertically connected to the ground plane of the mother circuit board through respective vias. It may further comprise a coplanar waveguide (CPW) comprising a line.

Surface Mount, Ultra-Wide Band, Transition Structures, Impedance Matching, Coplanar Waveguide (CPW), Tapering

Description

ULTRA-WIDEBAND TRANSITION STRUCTURE FOR SURFACE MOUNTABLE COMPONENTS AND APPLICATION MODULE THEREOF

The present invention relates to a surface-mounted ultra-wideband transition structure, and more particularly, to implement a device or a module having ultra-wideband characteristics, such as an ultra-wideband multiplier, an ultra-wideband mixer, or the like in a surface-mounted device. The present invention relates to a surface mount ultra wideband transition structure and an application module thereof capable of increasing a maximum operating frequency at which a surface mount device can operate normally even when a thick multilayer board is required.

Examples of devices using an ultra wide band balun include an ultra wide band multiplier and an ultra wide band mixer. In general, in order for these ultra-wide band baluns to operate properly, there must be an air gap of more than about 40 [mil] (1 [mm]) between the plane of the balun and the ground plane.

Currently, most of the commercially available ultra-wideband mixers and multipliers are provided in the housing (SMA) connector form, or as a carrier (carrier) form. However, the housing type is expensive due to housing manufacturing and the cost of additional SMA connector, and in order to use the carrier type device, the housing and the board are grooved in the part where the carrier is inserted, and the signal line of the mother board circuit is additionally connected. This necessitates high circuit implementation costs.

By implementing the ultra-wideband device in the form of a chip device capable of surface mounting, it is possible to mass-produce the ultra-wideband device at a low price, and the user can easily mount it to the circuit of the mother substrate. In order to implement a device or a module having ultra-wideband characteristics in a surface mount type, an ultra-wideband transition structure is required in a multilayer board. Various types of ultra-wideband transition structures have been developed and used.

Such a transition structure is relatively easy to implement when the length of the circuit board to the surface mounting surface is shorter than 10 [mil] due to the thin thickness of the multilayer board, but it can be implemented well to the millimeter wave band, but the thickness of the substrate It is difficult to realize the operation up to millimeter wave when the length from the circuit surface to the surface mounting surface is so thick that it exceeds 40 [mil].

FIG. 1A illustrates one embodiment of a general surface mount transition structure, as shown in FIG. 1, wherein the microstrip line 121 of the surface of the surface mount element 120 terminates at the ground plane 122. It extends above and is connected to the microstrip line 111 of the surface mount surface 110 vertically through the via (VIA) 112, and the ground plane of the surface mount element 120 is connected to the plurality of vias 114. Through the structure can be used to vertically connected to the ground plane 113 of the surface mounting surface.

At this time, in the structure before the vertical transition to the via, a difference occurs in the balance and the length between the signal line and the ground plane, and due to parasitic components, it becomes difficult to operate to a high frequency.

This is based on the input reflection coefficients and forward transfer coefficients S11 and S21 of the S-parameters calculated for the surface mounted device having a thickness of 40 [mil] of the multilayer board using the transition structure shown in FIG. 1A (FIG. 1B). ), It can be seen that the maximum operating frequency that can be operated is limited to 20 [GHz].

In other words, when using the transition structure as shown in FIG. 1A in a multilayer substrate having a predetermined thickness or more, the maximum operating frequency is limited to about 20 [GHz]. Is hard.

An object according to an embodiment of the present invention was devised to solve the above problems, the surface-mount type ultra-wide band to increase the maximum operating frequency that the surface-mount device using a multi-layer substrate of a certain thickness or more can operate To provide a transition structure and its application module.

Preferably, the present invention uses a transition structure for transitioning to a coplanar waveguide (CPW: coplanar waveguide) before vertically shifting the microstrip line located on the surface of the surface mount device to the substrate of the parent circuit, and the shape of the ground plane. The present invention provides a surface mount ultra wideband transition structure and its application module capable of achieving optimal impedance matching and transition of natural electric field distribution by forming a tapered shape.

In addition, another object according to an embodiment of the present invention, by providing a transition structure that can be applied to the surface-mounted device, it is possible to provide a surface-mounted ultra-wideband transition structure that can provide an ultra-wideband module of low cost and mass production And an application module thereof.

In order to achieve the above object, the surface-mounted ultra-wideband transition structure according to an aspect of the present invention includes a first signal line is formed on one surface of the substrate and one end is connected to the signal line of the microstrip line; First and second ground lines spaced apart from each other in parallel on the same plane as the first signal line; And a width of one end connected to the ground plane of the microstrip line on the other side of the substrate and formed along the two ground lines and adjacent to the microstrip line is greater than the width of the other end and through at least one via. It may include first and second ground plane connected to the first and second ground lines.

Preferably, a second signal line connected to the first signal line on one surface of the substrate and vertically connected to a signal line of a mother circuit board spaced apart from the substrate at a predetermined interval vertically through a via; And third and fourth grounds which are formed to be symmetrical in parallel with the second signal line at predetermined intervals and are connected to each of the first and second ground lines and vertically connected to the ground plane of the mother circuit board through respective vias. It may further comprise a coplanar waveguide (CPW) comprising a line.

Preferably, the first and second ground planes may be formed to have a shape that decreases in width toward the first and second ground lines from one end to the other end in order to achieve a natural transition of the electric field distribution. have.

Preferably, the first and second ground planes may be formed in a tapered shape in which the width of the one end is greater than the width of the other end.

Preferably, the curved surface of the ground plane may be formed such that the first and second ground planes have a Klopfenstein taper shape.

Preferably, the first and second ground lines may be connected to the ground plane of the mother circuit board through the at least one via.

Preferably, the CPW includes third and fourth ground planes connected to the first and second ground planes, and the third and fourth ground lines are connected to the third and fourth ground planes through respective vias. It can be connected with.

Application module using the surface-mounted ultra-wideband transition structure according to an aspect of the present invention can be connected to the input or output terminal of the surface-mounted ultra-wideband transition structure described above, the surface-mounted ultra-wideband The module may include a surface mount ultra wideband single balanced multiplier, a surface mount ultra wideband dual balanced multiplier, and a surface mount ultra wideband mixer.

Other objects and features of the present invention will become apparent from the following description of embodiments with reference to the accompanying drawings.

Hereinafter, a surface mount type ultra wideband transition structure and an application module thereof according to an embodiment of the present invention will be described in detail with reference to FIGS. 2 to 11. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

Figure 2 shows a perspective view of a surface-mounted ultra-wideband transition structure according to an embodiment of the present invention, Figure 3 shows a plan view of the surface-mounted ultra-wideband transition structure shown in FIG.

2 and 3, the surface-mounted ultra-wideband transition structure 200 includes a second vertical transition of the first CPW 320 transforming the shape of the ground plane to the microstrip line 310 and the mother circuit board. The structure located between the CPWs 330 is adopted.

Here, the portion represented by the dotted line shown in FIG. 3 represents a ground plane formed on the bottom surface of the substrate 210 and includes two ground lines (parallel to the first signal line 321 constituting the first CPW 320). First and second ground lines 322 and 323 are connected to two ground planes (first and second ground planes) 324 and 325 through at least one via 326.

At this time, the two ground planes 324 and 325 form one ground plane 327 at a portion connected to the ground plane 312 of the microstrip line, where the first CPW 320 is a CB-CPW ( Conductor-Backed CPW).

Each of the first and second ground planes 324 and 325 constituting the first CPW 320 has a width of a portion adjacent to the microstrip line 310 compared to a width of a portion adjacent to the second CPW 330. It can be seen that large, which is to achieve a natural electric field distribution transition between the microstrip line 310 and the second CPW 330, the first from the microstrip line 310 toward the second CPW 330 The width of the CPW toward the first and second ground lines 322 and 323 may be reduced.

Of course, the shape of each of the first and second ground planes 324 and 325 is preferably formed to be Klopfenstein tapered in order to achieve optimum impedance matching.

The second CPW 330 is a second signal line 331 connected to the first signal line 321 of the first CPW 310 on one surface of the substrate 210, and the first and the first of the first CPW 310. And third and fourth ground lines 332 and 333 connected to the two ground lines 322 and 323, and may have a predetermined distance from the substrate 210 through respective vias at the ends, for example, 40 [. mil] is vertically connected to the signal line and the ground plane located on the surface mounting surface of the mother circuit board 220 spaced apart.

In this case, an additional substrate for separating the two substrates by a predetermined distance between the substrate 210 and the mother circuit board 220 on which the first CPW 320 and the second CPW 330 are formed should be provided. In the detailed description, the description of this additional substrate is omitted.

Although the ground plane is not formed on the other surface of the substrate with respect to the second CPW 330 in FIG. 3, the first and second ground planes 324 and 325 of the first CPW 320 are not limited thereto. ) May include third and fourth ground planes (not shown) connected thereto. That is, the second CPW 330 may or may not include the third and fourth ground planes depending on the situation.

The surface mount ultra wideband transition structure according to the present invention will be described in detail with reference to FIGS. 4 and 5.

FIG. 4 illustrates a detailed configuration of the ground plane and the via of the first CPW illustrated in FIG. 3, and FIG. 5 illustrates A′A (a) and B′B (in the surface mount ultra-wideband transition structure illustrated in FIG. 3. b), cross-sections of C'C (c) and D'D (d) are shown.

4 and 5, one end of the first signal line 321 of the first CPW 320 is connected to the signal line 311 of the microstrip line formed on one surface of the dielectric substrate, and the second signal of the second CPW is connected. The other end is connected to the signal line 331, and the first and second ground lines 322 and 323 of the first CPW are spaced apart from the first signal line 321 from a point where the first signal line 321 starts. It is symmetrically formed to be spaced apart and configured to be connected to the third and fourth ground lines 332 and 333 of the second CPW, respectively.

In this case, the first and second ground lines 322 and 323 are configured to be connected to the first and second ground planes 324 and 325 indicated by the shade of the other surface of the dielectric substrate through at least one or more vias 326. Each of the first and second ground planes 324 and 325 is connected to the ground plane 312 of the microstrip line in consideration of impedance matching with the microstrip line, and is formed to have a smaller width toward the second CPW. The first ground plane 324 may have a shape that decreases in width toward the first ground line 322, and the second ground plane 325 may have a shape that decreases in width toward the second ground line 323. have.

Of course, the first CPW 320 is divided into two ground planes 324 and 325 in a state in which one ground plane 327 is provided to a predetermined area, and thus, the width of the first CPW 320 is reduced.

The curve representing the degree to which the widths of the first and second ground planes 324 and 325 become smaller becomes the natural field distribution between the microstrip line and the second CPW when there is an impedance difference between the microstrip line and the second CPW. It is desirable to follow the taper shape, taking into account transitions and optimum impedance matching.

This natural electric field distribution will be described with reference to FIG. 6.

FIG. 6 shows the electric field distribution in each cross section shown in FIG. 5, and as shown in FIG. 6A, which shows a cross section at line A′A in FIG. 3, in the microstrip line, some electric field is outside the dielectric substrate. Although present, most are distributed vertically within the dielectric substrate.

As shown in FIG. 6B, which shows a cross section along the line B'B in FIG. 3, the portion 327 of the first CPW whose ground plane is deformed overlaps with the first and second ground planes 324 and 325. In the conductor-backed CPW (CB-CPW), it can be seen that the electric field distribution is transferred by the first and second ground lines 322 and 323 so that the horizontal line segments exist.

As shown in FIG. 6C, which shows a cross section at line C′C of FIG. 3, the first and second ground planes 324 connected through the vias 326 and the first and second ground lines 322 and 323. , 325 gradually decreases toward the first and second ground lines 322 and 323, and the electric field in the vertical direction decreases, and the electric field in the horizontal direction transitions.

In addition, the second signal line 331 and the third and fourth ground lines in the second CPW for vertical transition to the surface mounting surface of the mother circuit board are shown through FIG. 6D showing a cross section along the line D'D in FIG. 3. It can be seen that the electric field in the horizontal direction between (332, 333) is mainly distributed.

Therefore, according to the surface-mounted ultra-wideband transition structure according to the present invention, a natural electric field distribution can be transitioned between a microstrip line having an electric field distribution mostly in the vertical direction and a second CPW where the electric field distribution is mostly horizontal. Will be. That is, the first CPW has at least one via and decreases the width of the first and second ground planes connected to the first and second ground lines toward the second CPW toward the surface mounting surface of the mother circuit board. In addition to the electric field distribution transition in the horizontal direction to the second CPW for the vertical transition of, it is possible to ensure the continuity of the ground plane signal between the microstrip line and the first CPW.

At this time, the phase velocity or the effective dielectric constant of the first CPW including the vias whose ground planes are deformed is changed as the widths of the first and second ground planes are changed. The width of the ground plane should be considered.

On the other hand, the effect of the surface-mounted ultra-wideband transition structure according to the present invention in terms of impedance matching, divided into 1) the case of a low dielectric constant and 2) a high dielectric constant is described as follows.

1) In case of low dielectric constant substrate

For example, when the dielectric constant of the dielectric substrate has a low relative permittivity ε _r of 2 to 4, the characteristic impedance of the second CPW is relatively high compared to the characteristic impedance of the microstrip line. Impedance conversion is needed for optimal impedance matching.

For optimal impedance matching, the spacing S between the first signal line and the first and second ground lines of the first CPW and the spacing S _g between the first ground plane and the second ground plane should be considered. In 1 CPW, the spacing S between the first signal line 321 and the first ground line 322 or the second ground line 323 and the spacing between the first ground plane 324 and the second ground plane 325 ( A cross section showing S _g ) is shown in FIG. 7A.

An example of a surface mount ultra wideband transition structure according to an embodiment of the present invention is as follows. In the case of using the RT-Duroid 5880 substrate having a relative dielectric constant of 2.2 and a thickness of 10 [mil], the signal line width having a characteristic impedance of 50 [Ohm] for the microstrip line is 30 [mil], and the second In case of CPW line, the characteristic impedance is 98 [Ohm] when the width of signal line is 30 [mil] and the distance between signal line and two ground lines is 15 [mil]. Therefore, the characteristic impedance is 50 [Ohm] using the first CPW. ] To 98 [Ohm], so that the impedance change according to the transition length is changed to clopenstein tapering by changing the distance S _g between the first and second ground planes so as to achieve an optimum impedance matching.

Using the substrate, the spacing S between the first signal line 321 and the first ground line 322 or the second ground line 323 and the first ground plane 324 and the first ground line 324 at a frequency of 10 [GHz]. The impedance change according to the distance S _g of the two ground planes 325 is shown in FIG. 7B. As shown in FIG. 7B, the width S _g of the first and second ground planes is adjusted to match the second CPW having a relatively high characteristic impedance from the characteristic impedance of the microstrip line, and thereby the microstrip. Optimal impedance matching from the line to the second CPW can be achieved.

That is, by adjusting the width S _g between the first ground plane and the second ground plane according to the transition length of the first CPW, the optimum impedance matching is simultaneously achieved at the same time as the natural electric field distribution from the microstrip line to the second CPW. The width change of the first and second ground planes for implementing the optimum impedance tapering (continuous impedance change) may be determined by using the impedance characteristic change as shown in FIG. 7B.

Here, the shape of the first and second ground planes of the first CPW may be implemented such that the impedance tapering is Klopfenstein tapering, but is not limited thereto. In order to obtain desired frequency characteristics, Hecken tapering Different types of impedance tapering, such as), can also be used to determine the shape of the ground plane.

2) In case of substrate with high dielectric constant

For example, when the dielectric constant of the dielectric substrate has a high relative permittivity ε _r of about 10, the difference between the characteristic impedance of the microstrip line and the characteristic impedance of the second CPW does not vary much. The second ground plane may be modified in consideration of only the transition of the appropriate electric field distribution. That is, when a substrate having a high dielectric constant is used, the first and second ground planes may be similarly modified as in the case of 1) a substrate having a low dielectric constant, but the characteristics of the transition structure are higher than those of a substrate having a low dielectric constant. Since it is relatively less sensitive to the deformed shape of the second ground plane, only the transition of the natural electric field distribution between the microstrip line and the second CPW can achieve a very wide frequency band transition structure.

FIG. 8 shows simulation and measurement results as an example of configuring a microstrip-CPW transition structure, which is a key component of the surface-mounted ultra-wideband transition structure according to the present invention, as a back-to-back structure.

FIG. 8A shows the top surface of the back-to-back structure of the microstrip-CPW transition structure of the present invention, and FIG. 8B shows the bottom surface of the back-to-back structure of the microstrip-CPW transition structure of the present invention. In addition, FIG. 8C shows simulation results and measured results of the S-parameter according to the ultra-wideband microstrip-CPW transition structure implemented in FIGS. 8A and 8B, and the thick curve shows the input reflection coefficient and forward transfer as a measurement result. The coefficients S11 and S21 are shown, and the dotted lines and the thin lines represent the input reflection coefficients and the forward transfer coefficients S11 'and S21' as simulation results.

From these simulation results and measurement results, it can be seen that the microstrip-CPW transition structure according to the present invention operates to almost 40 [GHz].

9 is a perspective view (a) and a simulation result (b) of the surface mount packaging structure in which the surface mount ultra wideband transition structure according to the embodiment of the present invention described above is connected back-to-back. The simulation results for the input reflection coefficients and the forward transfer coefficients (S11, S21) show that the operating frequency is up to 30 [GHz] near DC. The ultra-wideband device can be implemented as a surface-mount device.

FIG. 10 illustrates another embodiment of the surface-mounted ultra-wideband transition structure according to the embodiment of the present invention as described above. When the second CPW line is connected to the surface mount surface vertically through the via, the structure of the via is shown. By improving the operating frequency band, we show that the surface mount transition structure can operate up to 40 [GHz] near DC.

Such surface-mounted ultra-wideband transition structure according to the present invention can be applied to various applications, for example, ultra-wideband single balanced multiplier module, ultra-wideband double balanced multiplier module, ultra-wideband mixer ( Mixer) module etc. can be mentioned.

11A to 11D illustrate examples of the surface mount type ultra wide band application module in which the surface mount type ultra wide band transition structure according to the present invention may be used, and FIG. 11A illustrates the surface mount type ultra wide band transition structure according to the present invention. Figure 11b shows one embodiment for an ultrawideband single balanced multiplier module that can be used, and Figure 11b shows one embodiment for an ultrawideband double balanced multiplier module in which a surface mount ultrawideband transition structure according to the present invention can be used. 11C and 11D illustrate one embodiment of an ultra wideband mixer module in which a surface mount ultra wideband transition structure according to the present invention may be used.

As shown in FIG. 11A, the surface mount ultra wideband single balanced multiplier module includes a microstrip line and a module connected to a portion 1111 into which the ultra wideband single balanced multiplier element is inserted and an input terminal or an output end of the ultra wideband single balanced multiplier element. A transition structure 1112 of the present invention for performing natural field distribution transitions and optimal impedance matching between surface mount surfaces of a circuit board is included.

In this case, the input terminal of the ultra-wideband single balanced multiplier device may include the ultra-wideband balun 1113 described in the registration number 10-0771529, which is patented and registered by the same applicant, balun is a microstrip line or CPW To connect the unbalanced line and the balanced line as described above, detailed description thereof will be omitted since it may distract the gist of the present invention.

As shown in FIG. 11B, the surface-mounted ultra-wideband double balanced multiplier module has a microstrip line and a module connected to a portion 1121 into which the ultra-wideband double balanced multiplier element is inserted and an input terminal or an output end of the ultra-wideband double balanced multiplier element. It includes a transition structure 1122 of the present invention for performing natural field distribution transitions and optimal impedance matching between the surface mount surfaces of the circuit board, the input end of which is passed through the ultra wide band balun 1123 in the transition structure 1122. Signals are input to the broadband double balanced multiplier elements.

The surface-mounted ultra-wideband mixer has a local oscillation (LO: local) to the input or output terminal of the portions 1131 and 1141 into which the ultra-wideband mixer is inserted, such as the horseshoe type mixer shown in FIG. 11C and the mixer shown in FIG. 11D. An oscillation signal, a radio frequency (RF) signal, and an intermediate frequency (IF) signal are connected, and the LO signal or the RF signal is connected to the surface-mounted ultra-wideband transition structures 1132 and 1142 and the ultra-wideband balun of the present invention. 1133, 1143, and the mixer element, IF signal is also connected to the mixer element via the surface-mounted ultra-wideband transition structure (1132, 1142) of the present invention.

Here, the surface mount ultra wideband transition structures 1112, 1122, 1132, and 1142 illustrated in FIGS. 11A through 11D include a first CPW and a second CPW as illustrated in FIG. 3, and are modified in the first CPW. By including two ground planes, the maximum operating frequency of the surface-mounted ultra-wideband device can be increased to 30 [GHz] or more, and the ultra-wideband device can be surface-mounted using the surface-mounted ultra-wideband transition structure of the present invention. It can be implemented to provide a cost-effective, mass-produced, surface-mount, ultra-wideband module.

Of course, the surface mount ultra wideband transition structure according to the present invention is not limited to the ultra wide band single balanced multiplier, the ultra wide band double balanced multiplier, and the ultra wide band mixer described by way of example in FIG. It will be apparent to those skilled in the art that the ultra-wideband transition structure can be used in any application module that can be used.

Surface-mounted ultra-wideband transition structure and its application module according to the present invention can be modified and applied in various forms within the scope of the technical idea of the present invention and is not limited to the above embodiments. In addition, the embodiments and drawings are merely for the purpose of describing the contents of the invention in detail, not intended to limit the scope of the technical idea of the invention, the present invention described above is common knowledge in the technical field to which the present invention belongs As those skilled in the art can have various substitutions, modifications, and changes without departing from the spirit of the present invention, it is not limited to the embodiments and the accompanying drawings. And should be judged to include equality.

FIG. 1A shows an embodiment of a general surface mount transition structure, and FIG. 1B shows an input reflection coefficient of an S-parameter when the thickness of a multilayer substrate using the transition structure shown in FIG. 1A is 40 [mil]. And forward transfer coefficients.

Figure 2 shows a perspective view of a surface-mounted ultra-wideband transition structure according to an embodiment of the present invention.

FIG. 3 illustrates a plan view of the surface mount ultra wide band transition structure illustrated in FIG. 2.

FIG. 4 illustrates a detailed configuration of the ground plane and the via of the first CPW shown in FIG. 3.

FIG. 5 is a cross-sectional view of A'A (a), B'B (b), C'C (c) and D'D (d) in the surface mount ultra-wideband transition structure shown in FIG.

FIG. 6 shows electric field distribution in each cross section shown in FIG. 5.

FIG. 7 is a cross-sectional view (a) illustrating a distance S between a first signal line and a first ground line or a second ground line, and a distance S _g between a first ground plane and a second ground plane in FIG. 5C, and FIG. The impedance change b according to the distance S between the first signal line and the first ground line or the second ground line and the distance S _g between the first ground plane and the second ground plane is shown.

FIG. 8A illustrates the top surface of the back-to-back structure of the microstrip-CPW transition structure of the present invention, and FIG. 8B illustrates the bottom surface of the back-to-back structure of the microstrip-CPW transition structure of the present invention. FIG. 8C shows simulation results and measured results of S-parameters according to the ultra-wideband microstrip-CPW transition structure implemented in FIGS. 8A and 8B.

FIG. 9A illustrates a perspective view of a surface mount packaging structure in which a surface mount ultra wideband transition structure is connected back-to-back according to an embodiment of the present invention. FIG. 9B illustrates simulation results of FIG. 9A. It is shown.

FIG. 10 illustrates another embodiment of the surface mount ultra wideband transition structure according to the embodiment of the present invention described above.

FIG. 11A illustrates an embodiment of an ultrawideband single balanced multiplier module in which a surface mount ultrawideband transition structure according to the present invention may be used, and FIG. 11B illustrates a surface mount ultrawideband transition structure according to the present invention. One embodiment for an ultra-wideband double balanced multiplier module is shown, and FIGS. 11C and 11D show one embodiment for an ultra-wideband mixer module in which a surface mount ultra-wideband transition structure according to the present invention may be used.

Description of the Related Art

320: first CPW

321: first signal line

322: first ground line

323: second ground line

324: first ground plane

325: second ground plane

326: Via

330: second CPW

331: second signal line

332: third ground line

333: fourth ground line

Claims (9)

In the surface mount ultra wide band transition structure, A first signal line formed at one surface of the substrate and connected to a signal line of the microstrip line at one end thereof and having no change in the width of the line; First and second ground lines spaced apart from each other in parallel on the same plane as the first signal line; And The width of one end connected to the ground plane of the microstrip line on the other side of the substrate and formed along the two ground lines and adjacent to the microstrip line is greater than the width of the other end and through at least one via. First and second ground planes connected to the first and second ground lines, The first and second ground planes The width decreases toward the first and second ground lines from the one end to the other end to achieve natural transition and impedance matching of the electric field distribution by adjusting the spacing between the first and second ground planes. It is formed to have a shape to The surface mount ultra wideband transition structure A second signal line connected to the first signal line on one surface of the substrate and vertically connected to a signal line of a mother circuit board spaced apart at a predetermined interval vertically from the substrate through one via; And third and fourth grounds which are formed to be symmetrical in parallel with the second signal line at predetermined intervals and are connected to each of the first and second ground lines and vertically connected to the ground plane of the mother circuit board through respective vias. Further comprising a coplanar waveguide (CPW) comprising a line, The CPW is A surface mount type including third and fourth ground planes connected to the first and second ground planes, and the third and fourth ground lines are connected to the third and fourth ground planes through respective vias Ultra-wideband transition structure. delete delete The method of claim 1, The first and second ground planes Surface-mounted ultra-wideband transition structure in which the width of the one end is formed in a tapered shape larger than the width of the other end. The method of claim 1, The shape of the first and second ground plane is Klopfenstein (Klopfenstein) Surface-mounted ultra-wideband transition structure in which the curved surface of the ground plane is formed to be tapered. The method of claim 1, The first and second ground lines are And a surface mount ultra wide band transition structure connected to the ground plane of the mother circuit board through the at least one via. delete The surface mount ultra wideband module of claim 1, wherein the surface mount ultra wideband transition structure is connected to an input terminal or an output terminal of the surface mount ultra wideband module. 9. The method of claim 8, The surface mount ultra wide band module Surface-mounted ultra-wideband single balanced multiplier, surface-mounted ultra-wideband dual balanced multiplier, and surface-mounted ultra-wideband mixer.

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