KR101147313B1 - Photovoltaic module and manufacturing method of the same - Google Patents

Photovoltaic module and manufacturing method of the same Download PDF

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Publication number
KR101147313B1
KR101147313B1 KR1020100101098A KR20100101098A KR101147313B1 KR 101147313 B1 KR101147313 B1 KR 101147313B1 KR 1020100101098 A KR1020100101098 A KR 1020100101098A KR 20100101098 A KR20100101098 A KR 20100101098A KR 101147313 B1 KR101147313 B1 KR 101147313B1
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South Korea
Prior art keywords
electrode
conductive metal
bus bar
photovoltaic module
photoelectric conversion
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KR1020100101098A
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Korean (ko)
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KR20120039404A (en
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김봉연
이세호
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한국철강 주식회사
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

The photovoltaic module of the present invention includes a first electrode formed on a substrate, a photoelectric conversion layer formed on the first electrode, a second electrode of a translucent material formed on the photoelectric conversion layer, and the second electrode. And a bus bar configured to receive and transfer current generated by the photoelectric conversion layer to the outside, and a conductive metal formed between the second electrode and the bus bar.

Description

Photovoltaic module and its manufacturing method {PHOTOVOLTAIC MODULE AND MANUFACTURING METHOD OF THE SAME}

The present invention relates to a photovoltaic module and a method of manufacturing the same.

Recently, as the depletion of existing energy resources such as oil or coal is predicted, there is a growing interest in alternative energy to replace them. Among them, solar energy is particularly attracting attention because it is rich in energy resources and has no problems with environmental pollution. Solar energy uses solar energy to generate steam required to rotate a turbine using solar heat, and solar energy to convert photons into electrical energy using properties of a semiconductor.

A photovoltaic module that converts sunlight into electrical energy has a junction structure of a p-type semiconductor and an n-type semiconductor, like a diode. The action produces negatively-charged electrons and positively-charged holes, which cause current to flow as they move.

This is called the photovoltaic effect. Among the p-type and n-type semiconductors constituting the photovoltaic module, electrons are attracted to the n-type semiconductor and holes are drawn to the p-type semiconductor, respectively. When the electrodes move to the bonded semiconductors and connect the electrodes with wires, electricity flows outward.

Such photovoltaic modules are used for power generation as well as construction. Building photovoltaic modules are mounted on roofs, walls or windows of buildings to generate power. Building photovoltaic modules should have a number of different characteristics compared to photovoltaic modules for power generation, so research on building photovoltaic modules has been actively conducted.

In order to apply a building photovoltaic module to a window of a building, the photovoltaic module must have light transparency. One method for imparting light transmittance to a photovoltaic module is to form a back electrode with a light-transmissive material. However, while the transmissive back electrode has a high electrical resistance, the bus bar formed on the back electrode has a low resistance, resulting in poor electrical contact efficiency between the rear electrode and the bus bar, which deteriorates the efficiency of the entire photovoltaic module. There was a problem.

The present invention is to provide a photovoltaic module that can be used for construction by having a light transmittance while ensuring a high operating efficiency.

Technical problems to be achieved by the present invention are not limited to the above-mentioned technical problems, and other technical problems not mentioned above will be clearly understood by those skilled in the art from the following description. Could be.

A photovoltaic module according to an embodiment of the present invention, a first electrode formed on a substrate, a photoelectric conversion layer formed on the first electrode, a second electrode of a translucent material formed on the photoelectric conversion layer, the first It may include a bus bar formed on the second electrode for receiving the current generated by the photoelectric conversion layer to transfer to the outside, and a conductive metal electrode formed between the second electrode and the bus bar.

In the method of manufacturing a photovoltaic module according to an embodiment of the present invention, forming a first electrode on a substrate, forming a photoelectric conversion layer on the first electrode, the first of the light-transmissive material on the photoelectric conversion layer Forming a second electrode, forming a conductive metal electrode in at least a portion of the region on the second electrode, and receiving a current generated by the photoelectric conversion layer on the conductive metal electrode and transferring a bus bar to the outside It may comprise the step of forming.

According to the present invention, since the opaque metal electrode is formed between the transparent electrode and the bus bar in the photovoltaic module having the rear electrode made of the transparent electrode, the electrical contact characteristics are improved, thereby reducing the operation efficiency of the building photovoltaic module. .

1 shows a configuration of a photovoltaic module according to an embodiment of the present invention.
2A to 2L illustrate a method of manufacturing a photovoltaic module according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS Fig.

1 is a view showing the configuration of a photovoltaic module according to an embodiment of the present invention.

Referring to FIG. 1, a photovoltaic module according to an embodiment of the present invention may include a first electrode 110, a photoelectric conversion layer 120, and a second electrode 130 sequentially formed on a substrate 100. Can be. A bus bar 150 may be formed on the second electrode 130 to transfer current generated by the photoelectric conversion layer 120 to the outside. In the photovoltaic module according to the embodiment of the present invention, the second electrode may be formed. The conductive metal electrode 140 is further formed between the 130 and the bus bar 150. Meanwhile, the insulating protective layer 160 covering the bus bar 150 and the second electrode 130 and the frame 170 surrounding the substrate 100 and the insulating protective layer 160 may be further included.

In the photovoltaic module according to the embodiment of the present invention, the second electrode 130 may be formed of a light transmitting material. This is to use as a light-transmitting building material integrated (BIPV) module applied to the window of the building by giving light transmittance to the photovoltaic module. When the second electrode 130 is made of a light transmitting material, the resistance of the second electrode 130 becomes very high. On the other hand, since the resistance of the bus bar 150 made of an opaque conductive material is low, a difference in resistance between the second electrode 130 and the bus bar 150 may increase, resulting in deterioration of electrical contact characteristics, thereby causing photovoltaic power. The efficiency of the module can be reduced. In the photovoltaic module according to an exemplary embodiment of the present invention, an opaque conductive metal electrode 140 is further formed between the second electrode 130 of the light transmissive material and the bus bar 150 to prevent such a decrease in efficiency. Accordingly, electrical contact instability between the bus bar 150 and the second electrode 130 may be alleviated and the efficiency decrease may be prevented.

Hereinafter, the manufacturing process of the photovoltaic module according to the embodiment of the present invention will be described in detail.

2A to 2L are views for explaining a manufacturing process of a photovoltaic module according to an embodiment of the present invention.

Referring to FIG. 2A, first, a substrate 100 is prepared. The substrate 100 may be an insulating transparent substrate. In addition, the substrate 100 may be an inflexible substrate such as glass or a flexible substrate such as a polymer or a metal foil. When the substrate 100 includes a metal foil, the substrate 100 may include an insulating layer (not shown) covering the metal foil.

Referring to FIG. 2B, the first electrode 110 is formed on the substrate 100. The first electrode 110 may be made of a conductive material. For example, the first electrode 110 may be a transparent conductive oxide (TCO). The conductive transparent electrode may be made of a material including SnO 2 : F, ZnO: B, ZnO: Al, and the like. The first electrode 110 may be formed by a chemical vapor deposition (CVD) method or a sputtering method. An embodiment of the present invention includes a process in which the first electrode 110 is formed, but the substrate 100 on which the first electrode 110 is formed may be prepared.

Referring to FIG. 2C, a scribing process of removing a part of the first electrode 110 by irradiating a laser is performed. A portion of the first electrode 110 is removed by the scribing process to form the groove P1 of the first pattern. Accordingly, a short circuit between adjacent first electrodes 110 may be prevented.

Referring to FIG. 2D, the photoelectric conversion layer 120 is formed to cover the first electrode 110 and the groove P1 of the first pattern. The photoelectric conversion layer 120 may include a p-type semiconductor layer, an intrinsic semiconductor layer, and an n-type semiconductor layer sequentially formed, or an n-type semiconductor layer, an intrinsic semiconductor layer, and a p-type semiconductor layer sequentially formed. The photoelectric conversion layer 120 may be formed by a plasma enhanced chemical vapor deposition (PECVD) process.

When the photoelectric conversion layer 120 includes a p-type semiconductor layer, an intrinsic semiconductor layer, and an n-type semiconductor layer sequentially formed, light is incident through the substrate 100. Conversely, when the photoelectric conversion layer 120 includes an n-type semiconductor layer, an intrinsic semiconductor layer, and a p-type semiconductor layer sequentially formed, light is incident through the substrate 100.

The p-type semiconductor layer may be formed by incorporating hydrogen gas into the reaction chamber together with a source gas containing silicon such as silane (SiH 4 ) and a doping gas containing a group 3 element such as B 2 H 6 . The intrinsic semiconductor layer may be formed by introducing a source gas containing silicon and hydrogen gas into the reaction chamber. The n-type silicon layer may be formed by mixing a doping gas containing a Group 5 element such as PH 3 , a source gas containing silicon, and hydrogen gas.

Referring to FIG. 2E, a scribing process of removing a portion of the photoelectric conversion layer 120 by performing laser irradiation in the air is performed. A portion of the photoelectric conversion layer 120 is removed by the scribing process to form the grooves P2 of the second pattern.

Referring to FIG. 2F, the second electrode 130 is formed to cover the photoelectric conversion layer 120 and the groove P2 of the second pattern. The second electrode 130 is intended to be used as a BIPV module is given a light transmittance to the photovoltaic module. The second electrode 130 may be formed of a conductive transparent material including ITO, SnO 2 , ZnO, or the like.

Referring to FIG. 2G, a scribing process of removing a portion of the photoelectric conversion layer 120 and the second electrode 130 by irradiating a laser in the air is performed. Accordingly, the third pattern of the grooves P3 penetrating the photoelectric conversion layer 120 and the second electrode 130 is formed. In this way, a plurality of unit cells including the first electrode 110, the photoelectric conversion layer 120, and the second electrode 130 formed on the substrate 100 and connected in series with each other are formed.

Referring to FIG. 2H, a scribe process may be additionally performed to remove a portion of the first electrode 110, the photoelectric conversion layer 120, and the second electrode 130 by irradiating the laser once more in the atmosphere. As a result, a fourth pattern groove P4 penetrating the first electrode 110, the photoelectric conversion layer 120, and the second electrode 130 is formed. The groove P3 of the third pattern is for forming unit cells, and the groove P2 of the second pattern is for series connection of unit cells. In addition, the groove P4 of the fourth pattern is for preventing an electric shock from occurring through the frame 170 (see FIG. 2L) surrounding the edge of the substrate 100. When the frame 170 is made of an insulating material such as wood or polymer, the groove P4 of the fourth pattern may not be formed. That is, the process described with reference to FIG. 2H may be omitted.

Referring to FIG. 2I, a conductive metal electrode 140 is formed in a region where a bus bar 150 (see FIG. 2J) is to be formed on the second electrode 130. The conductive metal electrode 140 is to prevent a phenomenon in which electrical contact between the second electrode 130 and the bus bar 150 is degraded as the second electrode 130 is formed of a light transmitting material. Specifically, there is a side in which the movement of electrons between the two electrodes is not free due to a large resistance difference between the second electrode 130 which is a translucent material and the bus bar 150 made of a conductive metal. The conductive metal electrode 140 is further formed between the 130 and the bus bar 150. That is, the metal electrode 140 serves as a buffer to alleviate the deterioration of electrical contact characteristics due to the large resistance difference between the second electrode 130 and the bus bar 150. To this end, the conductive metal electrode 140 may be formed of a material having a lower resistance than the second electrode 130 but greater resistance than the bus bar 150. For example, a conductive metal material such as Al, Ag, Mo, or the like may be the material of the metal electrode 140.

According to the exemplary embodiment of the present invention, the conductive metal electrode 140 may be formed through a screen printer method or a sputtering method. In detail, a screen (for example, a mask, a tape, or a covering film, etc.) in which the remaining areas except for the area where the bus bar 150 is to be formed is covered is formed on the second electrode 130, and on the screen. By applying a material of the conductive metal electrode 140, the conductive metal electrode 140 may be formed only in a region where the bus bar 150 is to be formed. That is, the conductive metal electrode 140 may be formed only in the region between the second electrode 130 and the bus bar 150. Since the conductive metal electrode 140 is formed of an opaque material and does not have light transmittance, it is preferable that the conductive metal electrode 140 is formed in an area to be covered by the frame 170 (see FIG. 2L) to be finally formed.

Referring to FIG. 2J, a bus bar 150 is formed on the conductive metal electrode 140. The bus bar 150 transmits the current generated in the unit cells to the outside. The bus bar 150 may be an adhesive tape on one surface thereof and may be a conductive tape formed of a conductive material such as Al.

Referring to FIG. 2K, an insulating protective layer 160 covering the bus bar 150 and the unit cells is formed. The insulating protective layer 160 may include one or more insulating layers. For example, the insulating protective layer 160 may include at least one of glass, polyethylene vinyl acetate (EVA), polyvinylfloride (PVF), polyvinyl butyral (PVB) sheet, or back sheet.

Referring to FIG. 2L, the frame 170 is formed to surround the periphery of the substrate 100 and the insulating protective layer 160 to complete the photovoltaic module. The frame 170 may cover at least a portion of the bus bar 150. In this case, the conductive metal electrode 140 formed under the bus bar 150 may also be covered at the same time.

In the photovoltaic module including the second electrode 130 of a translucent material, deterioration of electrical contact characteristics may be prevented by forming the conductive metal electrode 140 between the second electrode 130 and the bus bar 150. The degradation of the photovoltaic module is also prevented as much as possible.

Table 1 shows the performance of the conventional photovoltaic module in which the second electrode 130 is formed of a light-transmissive material in order to actually use the photovoltaic module as a BIPV module, and the second electrode 130 of the light-transmissive material according to the embodiment of the present invention. The performance of the photovoltaic module in which the conductive metal electrode 140 is formed between the bus bars 150 is shown. In this experiment, a photovoltaic module manufactured with a size of 1100 mm x 1300 mm was used.

Item Voc Isc Pmax Vpm Ipm FF Conventional technology 96.520 1.628 84.698 69.465 1.219 0.539 Example 97.033 1.623 87.177 70.673 1.234 0.553

Referring to Table 1, it can be seen that in terms of the open circuit (Voc), the short circuit current (Isc), the fill factor (FF), which are the main factors that determine the photoelectric conversion efficiency of the photovoltaic module. It can be seen that the electrical contact characteristics between the second electrode 130 and the bus bar 150 made of the light-transmitting material are improved, thereby improving the fill factor FF and the maximum output Pmax.

The present invention has been described above with reference to preferred embodiments thereof. Those skilled in the art will appreciate that the present invention can be implemented in a modified form without departing from the essential features of the present invention. Therefore, the disclosed embodiments should be considered in descriptive sense only and not for purposes of limitation. The scope of the present invention is shown in the claims rather than the foregoing description, and all differences within the scope will be construed as being included in the present invention.

100: substrate
110: first electrode
120: photoelectric conversion layer
130: second electrode
140: conductive metal electrode
150: bus bar
160: insulating protective layer
170: frame

Claims (14)

A first electrode formed on the substrate;
A photoelectric conversion layer formed on the first electrode;
A second electrode of a translucent material formed on the photoelectric conversion layer;
A bus bar formed on the second electrode and configured to receive a current generated by the photoelectric conversion layer and transfer the current to the outside; And
And a conductive metal formed between the second electrode and the bus bar. The method of claim 1,
And the resistance of the conductive metal is lower than the resistance of the second electrode and higher than the resistance of the bus bar. The method of claim 1,
The conductive metal is a photovoltaic module, characterized in that made of at least one material of Al, Ag, Mo. The method of claim 1,
And the conductive metal is formed by a screen printer method or a sputtering method. The method of claim 1,
The second electrode is a photovoltaic module, characterized in that formed of a material containing at least one of ITO, SnO 2 , ZnO. The method of claim 1,
An insulating protective layer covering the bus bar and the second electrode; And
And a frame surrounding the substrate and the insulating protective layer. Forming a first electrode on the substrate;
Forming a photoelectric conversion layer on the first electrode;
Forming a second electrode of a light transmissive material on the photoelectric conversion layer;
Forming a conductive metal in at least a portion of the region on the second electrode; And
And forming a bus bar on the conductive metal to receive the current generated by the photoelectric conversion layer and transfer the current to the outside. The method of claim 7, wherein
The resistance of the conductive metal is lower than the resistance of the second electrode and the manufacturing method of a photovoltaic module, characterized in that formed higher than the resistance of the bus bar. The method of claim 7, wherein
The conductive metal is a method of manufacturing a photovoltaic module, characterized in that formed using at least one material of Al, Ag, Mo. The method of claim 7, wherein
Forming the conductive metal is a method of manufacturing a photovoltaic module, characterized in that performed by a screen printer method or a sputtering method. The method of claim 7, wherein
Forming the conductive metal,
Forming a screen on the second electrode, the screen having a shape in which the remaining area except for the bus bar is formed is covered; And
And applying a material of the conductive metal on the screen. The method of claim 11,
The screen is a method of manufacturing a photovoltaic module, characterized in that at least one of a mask, a tape, a shielding film. The method of claim 7, wherein
The second electrode is a method of manufacturing a photovoltaic module, characterized in that formed of a material containing at least one of ITO, SnO 2 , ZnO. The method of claim 7, wherein
Forming an insulating protective layer to cover the bus bar and the second electrode; And
And forming a frame around the substrate and the insulating protective layer.
KR1020100101098A 2010-10-15 2010-10-15 Photovoltaic module and manufacturing method of the same KR101147313B1 (en)

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KR102390195B1 (en) * 2019-11-30 2022-04-25 한국광기술원 Combined Photovoltaic and Solar Thermal Power Generation System and Power Generation Method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002314104A (en) * 2001-04-17 2002-10-25 Sharp Corp Thin film solar cell and its manufacturing method
KR20100080304A (en) * 2008-12-29 2010-07-08 주성엔지니어링(주) Thin film type solar cell, and method for manufacturing the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002314104A (en) * 2001-04-17 2002-10-25 Sharp Corp Thin film solar cell and its manufacturing method
KR20100080304A (en) * 2008-12-29 2010-07-08 주성엔지니어링(주) Thin film type solar cell, and method for manufacturing the same

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