KR100909814B1 - Method for manufacturing photovoltaic module - Google Patents

Abstract

A method of manufacturing a photovoltaic module is provided to improve durability and reliability of the photovoltaic module by compensating for bending of a photovoltaic module. The photovoltaic cell including a photoelectric transformation layer positioned between a first electrode and a second electrode is formed. The photoelectric cell part(PVU) is formed in which the protective layer is laminated on the photovoltaic cell and includes the photovoltaic cell and the protective layer. The photoelectric cell part is arranged to a stage(500) and inhale gas is to apply the suction force to the edge area of the photoelectric cell part. The rim of the photoelectric cell part is inserted into the frame. The suction force is applied in the rim and central part of the photoelectric cell part by the cylinder(600) for inhalation and the hole (H) for gas inhalation.

Description

Manufacturing method of photovoltaic module {METHOD FOR MANUFACTURING PHOTOVOLTAIC MODULE}

The present invention relates to a method of manufacturing a photovoltaic module.

Recently, as the prediction of depletion of existing energy sources such as oil and coal is increasing, interest in alternative energy to replace them is increasing. Among them, the photovoltaic module is particularly attracting attention because it is rich in energy resources and has no problems with environmental pollution.

The photovoltaic module uses a photoelectric conversion phenomenon that converts light into electrical energy using the properties of a semiconductor. That is, when light is incident on a semiconductor doped with an impurity, energy of the light generates electrons and holes in the semiconductor, and current flows to the outside through electrodes and conductors connected to the semiconductor.

Since the photovoltaic module generates electricity by using light incident from the outside, the photovoltaic module is often exposed to the external environment. Accordingly, various researches are being conducted to protect the photovoltaic module and to improve reliability and durability.

The present invention provides a method of manufacturing a photovoltaic module for protecting the photovoltaic module and improving durability and reliability.

Technical problems to be achieved by the present invention are not limited to the above-mentioned technical problems, and other technical problems not mentioned above will be clearly understood by those skilled in the art from the following description. Could be.

The method of manufacturing a photovoltaic module of the present invention comprises the steps of forming a photovoltaic cell comprising a photovoltaic layer positioned between a first electrode and a second electrode, laminating a protective layer on the photovoltaic cell to form the photovoltaic cell. And forming a photovoltaic unit including the protective layer, arranging the photovoltaic unit on a stage and sucking a gas to apply suction to the edge region of the photovoltaic unit in the direction of the stage, and to the frame of the photovoltaic unit. Inserting.

The manufacturing method of the photovoltaic module of the present invention can improve the durability and reliability of the photovoltaic module by correcting the warpage of the photovoltaic module.

A method of manufacturing a photovoltaic module according to an embodiment of the present invention will be described in detail with reference to the drawings.

1A to 1L illustrate a method of manufacturing a photovoltaic module according to an embodiment of the present invention.

As shown in FIG. 1A, a substrate 100 is prepared first. The substrate 100 may be an insulating transparent substrate 100.

As shown in FIG. 1B, the first electrode 210 is formed on the substrate 100. In an embodiment of the present invention, the first electrode 210 may be formed by a chemical vapor deposition (CVD) method, and may be a transparent electrode including tin oxide (SnO 2) or zinc oxide (ZnO).

As shown in FIG. 1C, the laser is irradiated to the first electrode 210 side or the substrate 100 side in the atmosphere, and the first electrode 210 is scribed. As a result, a first separation groove 220 is formed in the first electrode 210. That is, since the first separation groove 220 is formed through the first electrode 210, a short circuit between the adjacent first electrodes 210 is prevented.

As illustrated in FIG. 1D, the photoelectric conversion layer 230 is stacked by CVD to cover the first electrode 210 and the first separation groove 220. In this case, the photoelectric conversion layer 230 may be stacked in order of the p-type semiconductor layer, the intrinsic semiconductor layer, and the n-type semiconductor layer. In order to form the p-type semiconductor layer, when a source gas containing silicon such as monosilane (SiH 4) and a gas containing group III elements such as B 2 H 6 are mixed in the reaction chamber, the p-type semiconductor layer is stacked by CVD. Then, when only the source gas containing silicon flows into the reaction chamber, an intrinsic semiconductor layer is formed on the p-type semiconductor layer by CVD. Finally, when a gas containing a Group 5 element such as PH3 and a source gas containing silicon are mixed, an n-type semiconductor layer is laminated on the intrinsic semiconductor layer by the CVD method.

As shown in FIG. 1E, the laser is irradiated to the substrate 100 side or the photoelectric conversion layer 230 side in the air to scribe the photoelectric conversion layer 230. As a result, the second separation groove 240 is formed in the photoelectric conversion layer 230.

As shown in FIG. 1F, a second electrode 250 covering the photoelectric conversion layer 230 and the second separation groove 240 is formed by CVD or sputtering. The second electrode 250 may include at least one of zinc oxide (ZnO) or silver (Ag). In addition, a buffer layer 260 including at least one of indium tin oxide (ITO), tin oxide (SnO 2), or indium zinc oxide (IZO) may be formed on the second electrode 250 by a sputtering method to enhance moisture resistance. Can be.

As shown in FIG. 1G, a laser is irradiated in the air to scribe the photoelectric conversion layer 230, the second electrode 250, and the buffer layer 260. Accordingly, third separation grooves 270 are formed in the photoelectric conversion layer 230, the second electrode 250, and the buffer layer 260.

As shown in FIG. 1H, the silver paste is applied to the first electrode 210 and the second electrode 250 and the bus bar BB such as a conductive sheet is brought into contact with the silver paste. Attached.

In order to protect the photovoltaic cell (PVC) including the photoelectric conversion layer 230 positioned between the first electrode 210 and the second electrode 250, the first protective layer 300 is photovoltaic by a lamination method. Cover part or all of the cell PVC. The first passivation layer 300 may include EVA (Ethylene Vinyl Acetate). After the first protective layer 300 is placed on the heated photovoltaic cell (PVC) and the substrate 100 for lamination of the first protective layer 300, the first protective layer 300 is the photovoltaic unit 200. And thermocompression bonding on the substrate 100. The second protective layer 400 may be located on the first protective layer 300. The second protective layer 400 may include low iron tempered glass. In addition, the second protective layer 400 is formed of a sandwich structure by stacking a polyvinyl fluoride (PVF) film, a poly-ethyllen terephthalate (PET) film, and a poly-vinyl fluoride (PVF) film in this order instead of the low iron tempered glass. It may have a back sheet structure of TPT structure, or a TPT structure in which poly-vinylidene fluoride (PVDF) film, poly-ethynlen terephthalate (PET) film, and poly-vinyldiene fluoride (PVDF) film are laminated in this order. have.

In the process of forming the first protective layer 300 and the second protective layer 400, when the temperature of the first protective layer 300 laminated by thermocompression decreases naturally, the first protective layer 300 is contracted. . As a result, the photovoltaic unit PVU including the substrate 100, the photovoltaic cell PVC and the protective layers 300 and 400 is bent, and the edge of the substrate 100 has a first edge with respect to the central portion of the substrate 100. Go up towards the protective layer (300).

As such, when the photovoltaic module is installed outside while the photovoltaic unit (PVU) is bent, moisture such as rainwater accumulates and foreign matters such as dust accumulate, thereby reducing reliability and efficiency of the photovoltaic module. In addition, when the curved photovoltaic unit PVU is inserted into the unbent frame, the coupling state between the photovoltaic unit PVU and the frame may be deteriorated.

As described above, in order to compensate for the bending of the photovoltaic unit PVU, the substrate 100 is disposed to contact the stage 500. The intake hole H is located in an area of the stage corresponding to the edge of the photovoltaic unit PVU. The intake cylinder 600 is inserted into the intake hole H and connected to the pump 700. The pump 700 receives the gas in the space between the photovoltaic unit PVU and the stage 500 generated by the bending of the photovoltaic unit PVU through the intake hole H and the intake cylinder 600. Sucking outside Accordingly, the suction force is applied to the edge of the photovoltaic unit PVU in the direction of the stage 500 as shown by the arrow to compensate for the warpage of the photovoltaic unit PVU.

In FIG. 1I, the bending of the photovoltaic unit PVU is excessively compensated for by the intake hole H located in an area of the stage corresponding to the edge of the photovoltaic unit PVU, thereby preventing the photovoltaic unit of FIG. 1H. (PVU) can be bent in the opposite direction to the bend.

Accordingly, as shown in FIG. 2, the suction force may be applied by the gas suction to the edge and the center of the photovoltaic unit PVU. That is, the intake hole H2 may be located not only in the region of the stage 500 corresponding to the edge of the photovoltaic unit PVU, but also in the region of the stage 500 corresponding to the center portion of the photovoltaic unit PVU. . The intake cylinder 600 is inserted into the intake hole H2 located in the region of the stage 500 corresponding to the central portion of the photovoltaic unit PVU and is connected to the pump 700. Therefore, since the suction force is generated by the gas sucked through the intake hole H2 located in the region of the stage 500 corresponding to the center of the photovoltaic unit PVU, the bending of the photovoltaic unit PVU is excessively compensated. Is prevented.

At this time, the number of intake holes H1 located in the area of the stage 500 corresponding to the edge of the photovoltaic unit PVU is in the area of the stage 500 corresponding to the center of the photovoltaic unit PVU. It may be larger than the number of intake holes H2 positioned. Accordingly, since the suction force applied to the edge of the photovoltaic unit PVU is greater than the suction force applied to the center portion of the photovoltaic unit PVU, the bending of the photovoltaic unit PVU can be compensated stably without excessive correction of the warpage. .

As shown in FIG. 3, the amount of gas introduced through the intake cylinder 600 may be controlled by the controller 800. Accordingly, due to the suction force by the gas sucked through the one of the plurality of intake holes H positioned in the region of the stage corresponding to the edge of the photovoltaic unit PVU and the gas sucked through the other one Suction forces can vary.

That is, the degree of warpage may vary depending on the position of the photovoltaic unit PVU. For example, one edge of the photovoltaic unit PVU may be more curved than the other edge of the photovoltaic unit PVU. Therefore, when the amount of gas introduced per unit time through the intake cylinder 600 is controlled by the controller 800, the bending correction of the photovoltaic unit PVU may be accurately performed. As such, when the amount of gas introduced per unit time is controlled, the amount of gas sucked per unit time through one of the plurality of intake holes H may be inhaled per unit time through another one of the plurality of intake holes H. May be different from the amount of.

As illustrated in FIG. 4, the suction pad 900 attached to the photovoltaic unit PVU may be connected to the suction hole H. The suction pad 900 may be made of elastic plastic or rubber. When gas inside the adsorption pad 900 is sucked through the suction hole H connected to the intake cylinder 600, the inside of the adsorption pad 900 quickly changes to a vacuum state, and thus the adsorption pad 900 is connected to the photovoltaic unit. Since it is attached to the PVU, the suction power is also increased. Accordingly, the compensation for the bending of the photovoltaic unit PVU may be quickly performed.

When the bending of the photovoltaic unit PVU is compensated for, the edge of the photovoltaic unit PVU is inserted into the frame F, as shown in FIG. 1J.

The warpage compensation method described above is applicable to other types of photovoltaic modules as well as amorphous photovoltaic modules.

5A to 5 illustrate a method of manufacturing a photovoltaic module according to another embodiment of the present invention.

As shown in FIG. 5A, the photoelectric conversion layer 110 is prepared. The photoelectric conversion layer 110 may be monocrystalline silicon or polycrystalline silicon, and may be p-type single crystal silicon or p-type polycrystalline silicon.

As shown in FIG. 5B, texturing is performed on the substrate 110 by a sputtering method or anisotropic etching. For example, in the case of anisotropic etching, since the etching rate is changed according to the crystal direction of the single crystal silicon, protrusions are formed on the surface of the photoelectric conversion layer 110. Accordingly, protrusions are formed on the surface of the photoelectric conversion layer 110. Light emitted from the outside is scattered by texturing, thereby increasing photoelectric conversion efficiency.

As shown in FIG. 5C, impurities are doped by vapor phase diffusion, application diffusion or ion implanting. When the photoelectric conversion layer 110 is p-type single crystal silicon or polycrystalline silicon, a pn junction is formed by doping the photoelectric conversion layer 110 with impurities containing a group 5 element. Unlike the photoelectric conversion layer 110 illustrated in FIG. 5C, when the photoelectric conversion layer is n-type single crystal silicon or polycrystalline silicon, an impurity containing group III elements is doped into the photoelectric conversion layer 110 to form a pn junction.

As shown in FIG. 5D, a plurality of anti-reflection films 120 and 130 are formed to prevent reflection of incident sunlight. The first anti-reflection film 120 is formed on one surface of the photoelectric conversion layer 110 that is organized, and the second anti-reflection film 130 is formed on the first anti-reflection film 120. The light reflected from the second anti-reflection film 130 and the light reflected from the first anti-reflection film 120 cause mutual interference to reduce reflection of sunlight. The first anti-reflection film 120 and the second anti-reflection film 130 may be formed by vacuum deposition, chemical vapor deposition, spin coating, screen printing, or spray coating.

As shown in FIG. 5E, the first electrode paste 130 is rubbed with a squeeze (not shown) on the screen mask SM to form a pattern of the first electrode on the second anti-reflection film 130. . In addition, the second electrode paste 150 is applied to contact the photoelectric conversion layer 110 through screen printing.

As shown in FIG. 5F, a firing process is performed, and a glass frit included in the first electrode paste 130 passes through the first antireflection film 120 and the second antireflection film 130 in the firing process. In contact with the photoelectric conversion layer 110.

Through this process, a photovoltaic cell (PVC) is formed.

As shown in FIG. 5G, the plurality of photovoltaic cells PVC are connected to each other by a conductive line L, and the first protective layer 160 such as EVA covers the photovoltaic cells PVC. Alternatively, the second protective layer 170 is located on the first protective layer 160. As a result, the photovoltaic unit PVU is formed. Since the first protective layer 160 shrinks while the first protective layer 160 is cooled after the heat is applied, the photovoltaic unit PVU may be bent.

Accordingly, as shown in FIG. 5H, the photovoltaic unit PVU is placed on a stage where the intake hole H is located in an area corresponding to the edge of the photovoltaic unit PVU. The intake cylinder 600 is inserted into the intake hole H and connected to the pump 700. The pump 700 receives the gas in the space between the photovoltaic unit PVU and the stage 500 generated by the bending of the photovoltaic unit PVU through the intake hole H and the intake cylinder 600. Sucking outside Accordingly, the suction force is applied to the edge of the photovoltaic unit PVU in the direction of the stage 500 as shown by the arrow to compensate for the warpage of the photovoltaic unit PVU.

Thus, the present invention is applicable not only to amorphous photovoltaic modules but also to monocrystalline and polycrystalline photovoltaic modules.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains can understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. will be. Therefore, the above-described embodiments are to be understood as illustrative and not restrictive in all respects, and the scope of the present invention is indicated by the appended claims rather than the detailed description, and the meaning and scope of the claims and All changes or modifications derived from the equivalent concept should be interpreted as being included in the scope of the present invention.

1A to 1J illustrate a method of manufacturing a photovoltaic module according to an embodiment of the present invention.

2 shows another example of a stage used in the manufacture of a photovoltaic module according to an embodiment of the invention.

Figure 3 shows another example of a stage used in the manufacture of a photovoltaic module according to an embodiment of the present invention.

4 shows another example of a stage used in the manufacture of a photovoltaic module according to an embodiment of the invention.

5A to 5H illustrate a method of manufacturing a photovoltaic module according to another embodiment of the present invention.

Claims (9)

Forming a photovoltaic cell comprising a photoelectric conversion layer positioned between the first electrode and the second electrode; Laminating a protective layer on the photovoltaic cell to form a photovoltaic unit including the photovoltaic cell and the protective layer; Arranging the photovoltaic unit on a stage and sucking a gas to apply suction to the edge region of the photovoltaic unit in the direction of the stage; And Inserting an edge of the photovoltaic unit into a frame; Suction force is applied by the gas suction to the edge and the center of the photovoltaic unit, And a suction force applied to the edge of the photovoltaic unit is greater than a suction force applied to a central portion of the photovoltaic unit. The method of claim 1, The photoelectric conversion layer is a method of manufacturing a photovoltaic module, characterized in that it comprises amorphous silicon, single crystal silicon or polycrystalline silicon. delete delete The method of claim 1, The photovoltaic power may be different from the suction force by the gas sucked through one of the plurality of intake holes located in the region of the stage corresponding to the edge of the photovoltaic unit and the suction force by the gas sucked through the other. Method of manufacturing the module. The method of claim 5, The amount of gas sucked per unit time through one of the plurality of intake holes is different from the amount of gas sucked per unit time through another one of the plurality of intake holes. The method of claim 1, The method of manufacturing a photovoltaic module, characterized in that for sucking the gas of the suction pad attached to the edge of the photovoltaic unit to apply a suction force in the direction of the stage to the edge region of the photovoltaic unit. The method of claim 1, The suction force is a manufacturing method of a photovoltaic module, characterized in that formed by the gas sucked through the intake hole of the stage. The method of claim 1, And the stage is in contact with the substrate of the photovoltaic unit.

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