KR101119795B1 - Ion implanting method and ion implanting apparatus - Google Patents

Abstract

This invention makes it a subject to adjust the beam current density distribution of each ion beam efficiently in the overlap area | region by the several ion beam irradiated on the glass substrate.
This ion implantation method is between a beam current density distribution adjusting step and a beam current density distribution adjusting step in which each of the plurality of ribbon-shaped ion beams is adjusted to have a predetermined current density distribution in a predetermined order, and the second and subsequent angles are determined. Before the beam current density distribution is adjusted for the ion beam, the beam current density distribution which is an adjustment target for the ion beam from which the beam current density distribution is adjusted from now on is adjusted using the adjustment result of the beam current density distribution made above. The glass substrate conveyance process which conveys a glass substrate in the direction which cross | intersects the target correction process and the long side direction of several ribbon type ion beam is performed.

Description

ION IMPLANTING METHOD AND ION IMPLANTING APPARATUS

The present invention relates to an ion implantation method and an ion implantation apparatus for forming a predetermined implantation amount distribution on a glass substrate by overlapping irradiation regions by a plurality of ribbon type ion beams.

In recent years, the enlargement of the liquid crystal product represented by liquid crystal television is remarkable. At the semiconductor manufacturing process, in order to process more liquid crystal panels in one process process, the attempt to make a liquid crystal panel multifaceted from a large glass substrate is made with the dimension of a glass substrate large. Corresponding to such a large glass substrate is also required about the ion implantation apparatus which is one of the semiconductor manufacturing apparatuses.

In order to meet such a request, the ion implantation apparatus of patent document 1 has been developed so far.

Patent Literature 1 discloses a technique of performing an ion implantation treatment on the entire surface of a glass substrate using two ion beams smaller than the dimensions of the glass substrate. More specifically, in patent document 1, three directions (X, Y, Z direction) orthogonal to each other are defined as an example of the short side direction of an ion beam, the long side direction of an ion beam, and the advancing direction of an ion beam, as an example. And in the process chamber in which the ion implantation process is performed to a glass substrate, two ion beams are located so that the irradiation area | region by each ion beam on a glass substrate may overlap in the Y direction at the position spaced apart from each other in the X direction. The center positions of each other are displaced and irradiated. By transporting a glass substrate along the X direction so as to cross such an ion beam, the ion implantation process over the whole glass substrate surface is implement | achieved.

As for the technique of patent document 1, the conveyance speed of a glass substrate is constant. And since uniform injection amount distribution is implement | achieved over the whole surface of a glass substrate, the current density distribution of the ion beam irradiated on a glass substrate is an area | region where two ion beams overlap each other, as shown in FIG. In addition, along the Y direction, the whole is adjusted so that it may become a substantially uniform current density distribution.

Patent Document 1: Japanese Patent Laid-Open Publication No. 2009-152002 (Fig. 1, Fig. 3, Fig. 6, paragraphs 0077 to 0088)

In general, the adjustment of the beam current density distribution in the region where the ion beams overlap each other is complicated by the large number of parameters to be adjusted as compared with the case of adjusting the beam current density distribution of one ion beam. If the adjustment is complicated, a problem may arise that, if blindly adjusted, it takes a considerable time until the adjustment is completed. Moreover, when time adjustment of the beam current density distribution takes time, the problem that the throughput (processing capacity) of an ion implantation apparatus may fall may arise.

However, in patent document 1, about adjustment of the beam current density distribution in the area | region where ion beams overlap each other, the beam current density distribution in the ion beam irradiation area | region which overlaps each other on a glass substrate differs from another area (region which does not overlap each other). It is only described that the adjustment is made to be almost equal to the beam current density distribution in Fig. 2), and it is not known what kind of adjustment makes an efficient adjustment.

Accordingly, an object of the present invention is to provide an ion implantation method and an ion implantation apparatus capable of efficiently adjusting the current density distribution of each ion beam in a region where the ion beams overlap each other.

That is, the ion implantation method according to the present invention comprises a plurality of ion beam supply devices for supplying a plurality of ribbon ion beams into a processing chamber, and a beam current density distribution in the long side direction of the plurality of ribbon ion beams, disposed in the processing chamber. 10. An ion implantation apparatus comprising: a beam profiler for individually measuring the beam current density; and beam current density distribution adjustment means for individually adjusting the beam current density distribution measured by the beam profiler; And, for the plurality of ribbon ion beams, adjust the beam current density distribution so as to be a predetermined beam current density distribution determined for each ion beam based on a measurement result of the beam current density distribution by the beam profiler in a predetermined order. A beam current density distribution adjusting step of adjusting means, and the beam current density Between the fabrication steps, and before the beam current density distribution is adjusted for the second and subsequent ion beams, using the adjustment result of the beam current density distribution in the ion beam in which the beam current density distribution has been previously adjusted, A target correction step of correcting the predetermined beam current density distribution serving as an adjustment target in the ion beam in which the beam current density distribution is now adjusted, and a direction crossing the long side direction of the plurality of ribbon ion beams in the processing chamber. The glass substrate conveyance process which conveys the said glass substrate is performed, It is characterized by the above-mentioned.

Moreover, the ion implantation apparatus which concerns on this invention is a some ion beam supply apparatus which supplies a plurality of ribbon type ion beams in a process chamber, and the beam current density in the long side direction of the said plurality of ribbon type ion beams arrange | positioned in the said process chamber. An ion implantation apparatus having a beam profiler for individually measuring the distribution, and beam current density distribution adjusting means for individually adjusting the beam current density distribution measured by the beam profiler, provided separately for each ion beam supply device. And, for the plurality of ribbon ion beams, adjust the beam current density distribution so as to be a predetermined beam current density distribution determined for each ion beam based on a measurement result of the beam current density distribution by the beam profiler in a predetermined order. Beam current density distribution adjusting step of adjusting means, and the beam current density min Between the adjusting steps, and before adjusting the beam current density distribution for the second and subsequent ion beams, the adjustment result of the beam current density distribution in the ion beam in which the beam current density distribution has been previously adjusted is now used. A target correction step of correcting the predetermined beam current density distribution which is an adjustment target in the ion beam in which the beam current density distribution is adjusted from the first direction; and in a direction intersecting with the long side direction of the plurality of ribbon ion beams in the processing chamber. It has a control apparatus which performs the glass substrate conveyance process which conveys the said glass substrate, It is characterized by the above-mentioned.

With such an ion implantation method or an ion implantation apparatus, the current density distribution of each ion beam in the region where the ion beams overlap with each other can be efficiently adjusted.

Moreover, the said glass substrate conveyance process may be made after completion | finish of the said beam current density distribution adjustment process. In this way, since the glass substrate is not conveyed during the adjustment of the beam current density distribution, it can be prevented from incorrectly injecting the glass substrate.

On the other hand, the order in which the plurality of ribbon-type ion beams are adjusted coincides with the conveying direction of the glass substrate, and it is received that the adjustment of the beam current density distribution for each ribbon-type ion beam is completed, and thus the long side of the ribbon-type ion beam is received. The glass substrate may be conveyed in a direction intersecting with the direction. In this way, even if the adjustment of the beam current density distribution in all the ribbon ion beams is not completed, since the ion implantation process can be performed in advance using the ribbon ion beam which has already been adjusted, the ion implantation process is performed accordingly. It can shorten the whole time.

In such a case, the current density distribution of each ion beam in the region where the ion beams overlap with each other can be efficiently adjusted.

BRIEF DESCRIPTION OF THE DRAWINGS It is a top view which shows the aspect of the ion implantation apparatus which concerns on the 1st, 2nd embodiment of this invention.
2 is a plan view when the inside of the processing chamber according to the first embodiment of the present invention is viewed in the Z direction.
3 is an explanatory diagram showing a relationship between an injection amount distribution of an ion beam and a current density distribution.
FIG. 4 is an explanatory diagram of an injection amount distribution formed when two ion distributions of ion beams shown in FIG. 3 are overlapped with each other.
5 is an explanatory diagram showing the relationship between the injection amount distribution of the ion beam and the current density distribution.
FIG. 6 is an explanatory diagram showing an example of a method of correcting a current density distribution to be adjusted based on FIG. 5.
7 is an explanatory diagram showing a relationship between an injection amount distribution of an ion beam and a current density distribution.
FIG. 8 is an explanatory diagram showing an example of a method of correcting a current density distribution to be adjusted based on FIG. 7.
9 is a plan view when the inside of the processing chamber according to the second embodiment of the present invention is viewed in the Z direction.
It is a top view which shows the aspect of the ion implantation apparatus which concerns on 3rd, 4th embodiment of this invention.
11 is a plan view when the inside of the processing chamber according to the third embodiment of the present invention is viewed in the Z direction.
12 is a plan view when the inside of the processing chamber according to the fourth embodiment of the present invention is viewed in the Z direction.

First Embodiment

FIG. 1 is a plan view showing an embodiment of the ion implantation apparatus 1 according to the present invention, and FIG. 2 is a plan view when the inside of the processing chamber of FIG. 1 is viewed in the Z direction. Based on these drawings, the overall configuration of the ion implantation apparatus according to an embodiment of the present invention will be described.

In this invention, X direction is made into the conveyance direction of a board | substrate, Y direction is made into the longitudinal direction of an ion beam, and Z direction is made into the advancing direction of the ion beam irradiated to a glass substrate in a process chamber. In addition, in this invention, when a ion beam is cut | disconnected in the plane orthogonal to the advancing direction of an ion beam, the ribbon type | mold refers to the ion beam whose cross section is substantially rectangular.

The ion implantation apparatus 1 of FIG. 1 mainly consists of the 1st ion beam supply apparatus 2 and the 2nd ion beam supply apparatus 12 which are enclosed by the dashed-dotted line. The first ion beam supply device 2 and the second ion beam supply device 12 are devices for supplying the first ion beam 6 and the second ion beam 16 into the processing chamber 11, respectively.

Each ion beam supply apparatus is demonstrated. The 1st ion beam supply apparatus 2 is equipped with the ion source 3, and the 1st ion beam 6 is taken out from this ion source 3. As shown in FIG. Various ions are mixed in the first ion beam 6 drawn out from the ion source 3. Among these, in order to irradiate only the desired ion on the glass substrate 10, the mass spectrometry magnet 4 and the analysis slit 5 cooperate and isolate | separate into desired ion and other ion. This separation is performed by adjusting the deflection amount of the first ion beam 6 in the mass spectrometry magnet 4 so that only the desired ions can pass through the analysis slit 5 by utilizing the difference in the number of masses for each ion.

Similarly with respect to the second ion beam supply device 12, the mass spectrometry magnet 14 and the analysis slit 15 are cooperated with the second ion beam 16 drawn out from the ion source 13 so that only the desired ions are formed in the glass substrate ( 10) is configured to be irradiated.

The first and second ion beams 6 and 16 supplied from the first and second ion beam supply devices 2 and 12 are formed by the beam profilers 7 and 17 provided in the processing chamber 11 so that the lengths of the individual ion beams are long. The beam current density distribution in the side direction (Y direction) is measured. As an example of this beam profiler, it is conceivable to use a multi-point Faraday cup in which a plurality of known Faraday cups are arranged along the Y direction or a single Faraday cup that is movable along the Y direction.

In the present invention, the ion beam supply devices 2 and 12 may have the same function or may have different functions. Moreover, the ion beam supply apparatus of the type which does not need a mass spectrometer magnet or an analysis slit may be sufficient. In this invention, it is important that the irradiation area of the ion beam supplied from each ion beam supply apparatus on a glass substrate overlaps, and various changes apply with respect to other structure.

The gate valve 20 located at the atmospheric side of the first vacuum preliminary chamber 22 is opened. Thereafter, the glass substrate 10 is carried into the first vacuum preliminary chamber 22 by a carrier robot (not shown) provided on the atmospheric side. At this time, the gate valve 18 located between the first vacuum preliminary chamber 22 and the processing chamber 11 is closed so that the processing chamber 11 side is not opened to the atmosphere.

After the glass substrate 10 is loaded into the first vacuum preliminary chamber 22, the gate valve 20 is closed, and the inside of the first vacuum preliminary chamber 22 is the same as the processing chamber 11 by a vacuum pump (not shown). The vacuum is exhausted until the degree of vacuum (pressure) is reached.

After the degree of vacuum in the first vacuum preliminary chamber 22 is about the same as the processing chamber 11, the gate valve 18 is opened. And the glass substrate 10 is carried in in the process chamber 11, and is conveyed in a process chamber so that the 1st ion beam 6 and the 2nd ion beam 16 may be crossed in the direction shown by the arrow A. FIG. Thereby, the ion implantation process to the glass substrate 10 is achieved.

Thereafter, the glass substrate 10 passes through the gate valve 19 and is loaded into the second vacuum preliminary chamber 23. Here, the gate valve 19 shall be opened at the appropriate timing during the ion implantation process to the glass substrate 10 in the process chamber 11, or after an ion implantation process.

After the loading of the glass substrate 10 into the second vacuum preliminary chamber 23 is completed, the gate valve 19 is closed. At this time, the gate valve 21 located in the atmospheric side of the second vacuum preliminary chamber 23 is closed. And after sealing the 2nd vacuum preliminary chamber 23, the pressure adjustment of the 2nd vacuum preliminary chamber 23 is performed by the vacuum pump which is not shown in figure until the atmosphere of a room becomes about the same as atmospheric pressure.

After the room of the 2nd vacuum preliminary chamber 23 becomes atmospheric pressure, the gate valve 21 opens and the glass substrate 10 is carried out to the atmospheric side by the carrier robot which is not shown in figure which was provided in the atmospheric side.

In addition, although the conveyance direction in the process chamber of the glass substrate 10 was shown by the arrow A, it does not need to be limited to this. For example, in order to inject more ions into the glass substrate 10, the glass substrate 10 may be reciprocated several times in the processing chamber 11. In this case, the glass substrate 10 will be conveyed by arrow A and the opposite direction.

In addition, you may increase the 1st, 2nd vacuum preliminary chamber 22, 23 in plurality each. In this case, a plurality of gate valves 18 and 19 are also provided to correspond to the respective vacuum reserve chambers. In this case, since the pressure adjustment in the plurality of first vacuum preliminary chambers or the plurality of second vacuum preliminary chambers can be performed separately, the pressure adjustment is performed while the pressure adjustment in one vacuum preliminary chamber is performed. Loading and carrying out of a glass substrate can be performed using another vacuum preliminary chamber which was finished. By using such a configuration, it is possible to increase the number of treatments of the glass substrate.

Furthermore, the 1st vacuum preliminary chamber 22 and the 2nd vacuum preliminary chamber 23 are paired in the conveyance direction of a board | substrate, and two or more pairs are provided along the Z direction. Moreover, the conveyance mechanism of a glass substrate is prepared in multiple numbers along Z direction so that the glass substrate 10 may convey each vacuum preliminary chamber separately. Then, it is also possible to synchronize each conveyance mechanism, and to convey so that the some glass substrate spaced apart in the Z direction and conveyed along the X direction may cross each ion beam continuously, without interrupting | interrupting. By doing in this way, since several glass substrates can be processed continuously, the number of processes of a glass substrate can further be increased. On the other hand, in this case, whether the vacuum preliminary chamber which carries in / out of the glass substrate 10 is made into the 1st vacuum preliminary chamber 22 or the 2nd vacuum preliminary chamber 23 is individually for every pair of vacuum preliminary chambers. You can set it.

FIG. 2 is a plan view when the inside of the processing chamber 11 of FIG. 1 is viewed from the Z direction.

As an example of the conveyance mechanism of the glass substrate 10, as shown in FIG. 2, the wheel is provided in the lower surface of the holder 24 holding the glass substrate 10, and this wheel is a 1st, 2nd vacuum preliminary chamber. It is possible to move the holder 24 along the X direction by rolling over the unillustrated rails 22 and 23 and arranged in the processing chamber 11. In this case, a power source for moving the holder 24 such as a motor is prepared separately. When reciprocating conveyance of the glass substrate 10 is considered, it is preferable to set it as the structure which can rotate the positive and negative if a power source is a motor.

In the Y direction, the first and second ion beams 6 and 16 have a length longer than that of the glass substrate 10. Therefore, when the glass substrate 10 is conveyed from the 1st vacuum preliminary chamber 22 to the 2nd vacuum preliminary chamber 23 in the arrow A direction shown in FIG. 2, the 1st ion beam 6 will be first. The ion beam is irradiated over the entire surface of the glass substrate 10 by this. Thereafter, the ion beam is irradiated onto the entire surface of the glass substrate 10 by the second ion beam 16. In the example of FIG. 2, the irradiation area | region by each ion beam overlaps on the whole surface of a glass substrate. On the other hand, the broken line surrounding each of the 1st, 2nd ion beams 6 and 16 has shown the external shape of the supply path (beam line) for supplying an ion beam to the process chamber 11 by each ion beam supply apparatus.

Next, the ion implantation process to a glass substrate is demonstrated in detail.

In the ion implantation process, the distribution of the ion implantation amount formed on the glass substrate 10, the current density distribution of the ion beam, and the conveyance speed of the glass substrate are closely related to each other. Generally speaking, the ion implantation amount (also referred to as the dose amount) is proportional to the current density of the ion beam (sometimes referred to as the amount of current), and is inversely proportional to the speed when the object to be irradiated (here, the glass substrate) crosses the ion beam.

For example, it aims at making distribution of the ion implantation quantity formed over the whole surface of the glass substrate 10 into a substantially uniform distribution. When the conveyance speed of the glass substrate 10 is constant, if the beam current density distribution of the ion beam in the direction orthogonal to a conveyance direction is made substantially uniform, the distribution of the ion implantation amount over the whole glass substrate whole surface will also become substantially uniform.

More specifically, in order to make the distribution of ion implantation substantially uniform across the entire surface of the glass substrate, in FIG. 2, when the glass substrate 10 moves at a constant speed along the short side direction of the ion beam, the long side of the ion beam What is necessary is just to make the beam current density distribution in a direction substantially uniform. In this case, the beam current density distribution in the short side direction of the ion beam may not be uniform. The unevenness (nonuniformity) of the beam current density distribution in the short side direction of the ion beam which is substantially coincident with the conveyance direction of the glass substrate 10 will be integrated with conveyance of a glass substrate. Therefore, even if there are spots, a certain amount of implantation is finally made, so the uniformity of the beam current density in the short side direction of the ion beam need not be considered. In addition, since the beam current density distribution in the both ends of the ion beam which is not irradiated on a glass substrate at the time of conveying the glass substrate 10 is not related to the injection amount distribution on a glass substrate, what kind of distribution may be sufficient as it.

Although the ion implantation process is performed to the glass substrate by the method mentioned above, when ion implantation process is performed by overlapping the irradiation area of an ion beam on the glass substrate 10, the following matters are considered. There is a need.

3 shows the relationship between the distribution of the ion implantation amount and the current density distribution on the glass substrate 10 by the first and second ion beams 6 and 16.

In order to simplify the explanation, it is assumed that the conveyance speed of the glass substrate 10 is made constant and the results of the beam current density distributions adjusted for the first and second ion beams 6 and 16 are the same. And finally, it aims at performing uniform ion implantation process over the whole glass substrate 10. FIG.

The horizontal axis of the graph shown in FIG. 3 represents a position on a glass substrate, and the vertical axis represents ion implantation amount or beam current density. The distance between the origin 0 and the B point of the horizontal axis coincides with the dimension of the glass substrate in the Y direction. In addition, in the upper graph, the dashed-dotted line shows the implantation distribution which is the target for uniform ion implantation treatment over the entire glass substrate 10, and the solid line shows the implantation distribution by the ion beam whose beam current density distribution is adjusted. Indicates. On the other hand, in the graph below, the dashed line represents the target current density distribution (target distribution), and the solid line represents the beam current density distribution in which the adjustment is made in each ion beam.

In each ion beam supply device, the beam current density distribution is adjusted so that a target injection dose distribution is achieved. Although the specific adjustment method of the beam current density distribution is mentioned later, it is impossible to adjust a beam current density distribution and to obtain a desired distribution certainly. For this reason, the beam current density distribution is usually adjusted to fall within a predetermined allowable range. For example, as this permissible range, it is a range similar to 3%-5% with respect to a target distribution. In addition, since the conveyance speed of a glass substrate is made constant here, the shape of the adjusted beam current density distribution (solid line shown in the lower graph of FIG. 3), and the shape of the injection amount distribution by the ion beam with which the beam current density distribution was adjusted ( The solid line shown in the upper graph of FIG. 3 is in a very similar form.

4 shows the injection amount distribution on the final glass substrate. In FIG. 4, the dashed-dotted line in FIG. 4 represents a target injection volume distribution when two ion beams are summed together, and a solid line sums the injection volume distributions of the first ion beam 6 and the second ion beam 16 whose beam current density distribution is adjusted. Injection volume distribution is shown. Since the current density distributions of the first ion beam 6 and the second ion beam 16 are the same, the beam current density distribution shown in FIG. 3 is exactly doubled as the injection amount distribution by the adjusted ion beam.

When the beam current density distributions of the individual ion beam supply devices are individually adjusted and the injection amount distributions by these ion beams are summed up, a significant deviation may occur in the final target injection amount distribution. It is over.

In this example, the beam current density distributions adjusted for the two ion beams are made the same. Therefore, in the place where the beam current density distribution (or injection amount distribution) in each ion beam is below the target distribution or exceeds the target distribution, the difference with the target distribution is finally doubled. For example, attention is paid to the difference between the injection amount and the target distribution at the position (M point in FIGS. 3 and 4) on the glass substrate where the beam current density is maximum. Since this difference is a (see FIG. 3) in the individual ion beams, in the final injection amount distribution (see FIG. 4), the difference between the injection amount and the target distribution at the position is 2a.

For example, assume that the difference between the actual dose and the target distribution is an allowable range up to ± 1.5a. If attention is paid to the individual ion beams, there is no problem because they are settled within this allowable range. However, in the case where the injection amount distributions of both ion beams are summed, as shown in FIG. Will fall. Then, it cannot be said that the predetermined injection amount distribution is inject | pouring into the whole surface of a glass substrate now. When implantation into the glass substrate is performed using the ion beam in which such adjustment is made, implantation defects are caused. In addition, even if the actual injection is not performed, the injection amount distribution is calculated from the data of the beam current density distribution in each ion beam, the final injection amount distribution data of these sums are prepared, and the final injection amount distribution data is determined in a predetermined allowable range. In the case of deviation from the inside, a method of adjusting the current density distribution of each ion beam can be considered based on the deviation amount between the final injection amount distribution data and the target distribution. However, the method of accommodating such a readjustment is inefficient.

In the present invention, in consideration of the problems mentioned above, the beam current density distribution in each ion beam is adjusted as follows.

Adjustment of beam current density distribution is demonstrated using FIG. 1 and FIG. 5 thru | or FIG.

The beam current density distribution in each ion beam supply apparatus may be adjusted by increasing or decreasing the amount of current flowing through each filament, for example, using an ion source having a multifilament known in the art.

Specifically, the ion source 3, 13 of the ion beam supply apparatuses 2, 12 shown in FIG. 1 is made into the ion source of the multifilament type in which several filaments were arranged along the Y direction. Then, the measurement area of the ion beam in the Y direction by the beam profilers 7 and 17 and the filaments provided in each ion source are matched. In this case, for example, when the beam profiler is composed of 15 Faraday cups, the beam profiler is divided into five areas composed of three Faraday cups, and two filaments (each ion source) Means that all of the filaments are 10 along the Y direction).

In this state, when the beam current density distribution is measured by the beam profiler, if there is a measurement area below the target distribution, the amount of current flowing in the filament corresponding to the area is increased to increase the beam current density. If there is a measurement area exceeding the target distribution, the operation of reducing the amount of current flowing through the filament corresponding to the area and making the beam current density lighter is performed. By this operation, adjustment is made so that the beam current density distribution falls within the allowable range of the target distribution. On the other hand, the increase and decrease of the amount of current is performed at a predetermined amount pitch for each adjustment, and the beam current density distribution is repeatedly alternated between the adjustment of the beam current density distribution and the measurement by the beam profiler, finally bringing the beam current density distribution closer to the target distribution. It may be adjusted so as to. In addition, when the difference between the beam current density distribution and the target distribution that is being adjusted is large, the pitch amount of the current amount that is increased or decreased for each adjustment is increased, and when the difference between the beam current density distribution and the target distribution that is being adjusted is small. In the form of reducing the pitch amount, the pitch amount may be divided into a plurality of stages.

On the other hand, although the method using a multifilament was demonstrated as adjustment of beam current density distribution, you may use a method different from this.

Specifically, instead of the multifilament type ion source, an electric field lens or a magnetic field lens for forming different dislocation distributions or magnetic field distributions along the Y direction is disposed in a supply path (beam line) for supplying an ion beam. In this case, the ion source is configured to have one filament.

With respect to the electric field lens, one set of electrodes is provided in such a manner that the ion beam is sandwiched between the short side directions, and it is conceivable that a plurality of sets exist along the Y direction. Then, according to the measurement result of the beam current density distribution in the beam profiler, the voltage applied to each tank is changed to generate a potential difference between the electrode groups. By doing so, the ion beam passing through each of the electrode groups arranged in the Y direction is moved locally along the Y direction according to the potential difference between the electrode groups, so that the current density distribution of the ion beam in the Y direction is determined in advance. It can be adjusted to approximate the target distribution.

In addition, it is conceivable that the magnetic field lens has a pair of magnetic poles formed by sandwiching the ion beam in the short side direction, and it has a configuration in which a plurality of pairs exist along the Y direction. The amount of current flowing through the coil wound around each magnetic pole group and its direction can be adjusted independently for each magnetic pole group. Then, according to the measurement result in the beam profiler, the current flowing to the coil wound around each magnetic pole is independently adjusted. In this case, since the ion beam passing between the pair of magnetic poles constituting each magnetic pole group is moved locally along the Y direction along the magnitude and direction of the magnetic field generated in each magnetic pole tank, The beam current density distribution of the ion beam can be adjusted to approximate a predetermined target distribution.

On the other hand, in the case of using the above-described electric field lens and the magnetic field lens, the electric field and the magnetic field are locally adjusted according to the measurement result in the beam profiler, but the way of thinking is the adjustment of the current density distribution using the multifilament type ion source. It can be thought of as described as a method. That is, a predetermined area of the beam profiler (when using a plurality of Faraday cups as the beam profiler, the predetermined area may be specified by the number of Faraday cups) and a predetermined number of electrode groups or magnetic pole groups may be associated with each other. .

It demonstrates again based on FIG. Among the two ion beam supply devices, first, the beam current density distribution of the first ion beam 6 generated by the first ion beam supply device 2 is adjusted. Thereafter, the beam current density distribution of the second ion beam 16 generated by the second ion beam supply device 12 is adjusted. This procedure is an example to the last, and which ion beam is adjusted from is determined in advance by the relationship with the data processing procedure in the control apparatus mentioned later.

The operator of the apparatus sets the ion implantation conditions to the ion implantation apparatus 1 via the user interface 26. At this time, the set ion implantation conditions are transmitted to the control device 25. As the implantation conditions, various conditions such as the energy of the ion beam, the implantation amount distribution, the implantation angle of the ion beam to the substrate, and the transport speed of the substrate are set, but the present invention focuses on the implantation amount distribution and the transport speed of the substrate.

In the control apparatus 25, the determination regarding what injection amount distribution with respect to the glass substrate 10 in each ion beam supply apparatus is made from the conveyance speed of the glass substrate 10 and the injection amount distribution to a board | substrate. For example, suppose a uniform ion implantation process is performed over the entire surface of the glass substrate 10, and the conveyance speed of the glass substrate is constant. In this case, if the number of ion beam supply devices is two, the distribution of the injection amount by each ion beam supply device may be determined in such a manner that the total injection amount is divided by half in each device. In addition, when the performance of each ion beam supply apparatus differs, you may change the sharing ratio in each apparatus according to a performance difference.

Furthermore, the control device 25 calculates the current density distribution in the long side direction of each ion beam from the injection amount distribution realized by the ion beam from each ion beam supply device and the conveyance speed of the glass substrate when crossing each ion beam. do. The calculated current density distribution is then transmitted to the control devices 8 and 9 described later as target distributions when adjusting the current density distribution of each ion beam.

Data of the target distribution of the beam current density distribution for the first ion beam supply device 2 is transmitted from the control device 25 to the control device 8 (S1). The control device 8 is a device for adjusting the beam current density distribution of the first ion beam supply device 2, and data of a target current density distribution transmitted from the control device 25 is accumulated.

Start-up of the ion source 3 shall be made before adjustment of the beam current density distribution. In that case, the electric current which flows through the filament of an ion source is previously set to an appropriate value. For example, if the ion source is an ion source of the multifilament type, the current flowing through each filament is made equal. This start-up control may be performed before the beam current density distribution is adjusted by the control device 8, for example. The beam current density distribution of the first ion beam 6 drawn from the ion source 3 is measured in the beam profiler 7 disposed in the processing chamber 11. Thereafter, the measurement result of the beam current density distribution is transmitted to the control device 8 (S2).

After receiving the data of the target distribution from the control device 25, the control device 8 controls each of the filaments provided in the ion source 3 (here, the ion source 3) to match the target beam current density distribution. The amount of current flowing through the multifilament type ion source) is increased (S3). Finally, the processes of S2 and S3 are repeated until the beam current density distribution falls within the allowable range of the target distribution.

On the other hand, the control device 8 determines whether the beam current density distribution has entered the allowable range of the target distribution. Data relating to the allowable range may be stored in the control device 8 in advance, or may be received together when receiving the target distribution data from the control device 25. In addition, the data concerning the permissible range may be set by the operator in the user interface 26 and have a structure in which it is transmitted to the control device 8 via the control device 25. The handling of data relating to this allowable range is the same in the control apparatus 9 described later.

After the control device 8 confirms that the beam current density distribution under adjustment has fallen within the allowable range of the target distribution, the control device 8 displays the data of the beam current density distribution at that time as a result of the adjustment of the beam current density distribution. It transmits to the control apparatus 25 as data (S4).

Thereafter, the control device 25 uses the adjustment result data of the current density distribution in the first ion beam supply device 2 to control the beam current density distribution in the second ion beam supply device 12. In (9), the correction concerning the data of the current density distribution which is originally intended to be transmitted is performed. The process according to this modification is called a target modification process in this invention.

5-6, an example regarding this correction is shown. Also in this example, in order to simplify description, the conveyance speed of a glass substrate is made constant and distribution of the target injection quantity in each ion beam supply apparatus is made the same. And the distribution of the injection amount finally formed on a glass substrate sums the injection amount distribution in each ion beam supply apparatus, and aims at achieving uniform injection amount distribution over the whole glass substrate surface.

In FIG. 5, the injection amount distribution by the 1st ion beam 6 supplied from the 1st ion beam supply apparatus 2, and its beam current density distribution are shown. The meanings of the horizontal axis, vertical axis, solid line, and dashed-dotted line in the drawings are the same as in FIG.

FIG. 6 shows an injection amount distribution to be realized by the second ion beam 16 supplied from the second ion beam supply device 12 and a target distribution regarding its beam current density distribution. The dashed-dotted lines shown in the up and down graphs of FIG. 6 respectively indicate the targets of the injection amount distribution and the beam current density distribution for the second ion beam 16 initially set by the control device 25. In addition, the dashed-dotted lines indicate the targets of the injection amount distribution and the beam current density distribution for the second ion beam 16 modified in consideration of this after the beam current density distribution of the first ion beam 6 is adjusted. .

When adjusting the beam current density distribution in the second ion beam supply device 12, the controller 25 first starts without considering the adjustment result of the beam current density distribution in the first ion beam supply device 2. When adjustment is made based on the beam current density distribution determined as the target of the second ion beam supply device 12, as shown in FIG. 4 above, there is a high possibility that it is greatly distorted from the target injection amount distribution finally. Therefore, the original target distribution shown by the dashed-dotted line in FIG. 6 is corrected to the new target distribution shown by the dashed-dotted line.

The injection amount distribution represented by the dashed-dotted line inverts the injection amount distribution (solid line) by the first ion beam 6 shown in FIG. 5 with respect to the target distribution (1 dashed line) of the injection amount distribution of the first ion beam 6. Distribution. The reason for inversion is as follows.

The injection amount distribution on the final glass substrate is the sum of the injection amount distributions by the first ion beam 6 and the second ion beam 16. Therefore, in the case where the injection amount distribution by the first ion beam 6 in which the beam current density distribution has been adjusted exceeds the injection amount distribution targeted by the first ion beam 6, the second ion beam 16 is increased by the amount of injection amount exceeded. Reduce the injection volume by On the contrary, in the case where the injection amount distribution by the first ion beam 6 in which the beam current density distribution has been adjusted is lower than the target injection amount distribution in the first ion beam 6, the second ion beam 16 is lowered by the injection amount as low as. Increase the injection volume by By doing in this way, the injection amount distribution by the 1st ion beam 6 and the injection amount distribution by the 2nd ion beam 16 cancel each other, and let the final injection amount distribution on a glass substrate become a distribution close to what was originally planned. It becomes possible.

After inverting the injection amount distribution in FIG. 6, based on the inverted injection amount distribution, a beam current density distribution for achieving it is calculated. The target distribution is corrected by replacing the calculated beam current density distribution with the original target distribution, and the beam current density distribution of the second ion beam 16 is adjusted to approximate the modified target distribution.

On the other hand, the description has been given of creating a new target distribution by reversing the injection amount distribution by the first ion beam, but it is not necessarily inverted completely. For example, if the dose distribution finally satisfies the permissible range, the incidence distribution may be inverted to the extent that satisfies the permissible range even if not completely inverted.

In addition, the method shown in Figs. 7 and 8 may be used for correcting the target distribution.

FIG. 7 shows the injection amount distribution and the beam current density distribution of the first ion beam 6 supplied from the first ion beam supply device 2 as in FIG. 5. The difference from FIG. 5 is that in FIG. 7, the average value of the adjusted beam current density distribution (dashed line in the lower graph of FIG. 7) and the average value of the injection amount distribution by the ion beam in which the beam current density distribution is adjusted (dashed line in the upper graph of FIG. 7). ) Is described. The average value here means the value which averaged the injection amount distribution by the ion beam irradiated on a glass substrate in the Y direction, and the value which averaged the beam current density distribution of the ion beam irradiated to a glass substrate.

In this example, the target distribution is corrected using these average values. First, the current density distribution of the first ion beam 6 is adjusted so as to be close to the target distribution of the beam current density distribution shown in FIG. 7 (one dashed line in the lower graph of FIG. 7). The adjustment result is shown by the solid line in the lower graph of FIG. Then, the data of the injection amount distribution is calculated based on the adjustment result of the current density distribution. This calculated data is represented by a solid line in the upper graph of FIG.

At this time, paying attention to the average value of the injection amount distribution, it can be seen that the value is as high as α compared to the target distribution of the injection amount distribution (the dashed line in the upper graph of FIG. 7). Here, an operation is performed in which the target distribution of the injection amount distribution by the second ion beam 16 is lowered by the average value of the injection amount distribution by the first ion beam 6 above the target distribution.

In detail, as shown in FIG. 8, the beam current density distribution for realizing the implantation distribution by making the target distribution of the implantation distribution in the second ion beam 16 lower by α minutes than the original target distribution. Calculate The calculated beam current density distribution is used as the target distribution when adjusting the current density distribution of the second ion beam 16. In this way, the target distribution may be corrected. In FIG. 8, similarly to FIG. 6, the original targets of the injection amount distribution and the beam current density distribution are indicated by a single-dotted line, and the targets of the injection amount distribution and the beam density distribution after correction are indicated by a double-dotted line. .

In addition, when the conveyance speed of the glass substrate 10 is constant, since the difference between the beam current density distribution adjusted by the 1st ion beam 6 and the target distribution was (beta), the 2nd ion beam 16 by this same thing. The target distribution of the beam current density distribution for is lowered. Therefore, in this case, the process of calculating the target distribution of the beam current density distribution using the data of the injection amount distribution is omitted, and the difference between the average value of the beam current density distribution of the first ion beam 6 and the target distribution. By calculating this and determining the target distribution of the beam current density distribution of the second ion beam 16 in accordance with this difference, the correction process of the target distribution can be performed quickly.

In the example of previous FIG. 5, FIG. 6, the target distribution is correct | amended so that the error of injection amount distribution may be corrected with respect to all the points on a glass substrate. Therefore, compared with the example of FIG. 7, FIG. 8, it can become closer to the injection volume distribution which aims at final injection volume distribution more accurately. On the other hand, in the examples of FIGS. 7 and 8 to be described later, since the average value is used to correct the target distribution, the target distribution can be easily modified. Moreover, since the modified target distribution does not become a complicated shape, the adjustment of the beam current density distribution can be simply finished.

The control device 25 corrects the target distribution in this manner, and transmits the corrected target distribution to the control device 9 (S5). The control apparatus 9 is an apparatus which adjusts the beam current density distribution of the ion beam supply apparatus 12, and the data regarding the target distribution of the current density distribution transmitted from the control apparatus 25, and the permissible range is accumulated.

The startup of the ion source 13 is performed in the same manner as the ion source 3. In that case, the control regarding the ion source 13 may be made by the control apparatus 9 before adjustment of beam current density distribution.

The ion beam 16 supplied from the ion source 13 has its beam current density distribution measured in the beam profiler 17 disposed in the processing chamber 11. And the measurement result of beam current density distribution is transmitted to the control apparatus 9 (S6).

After receiving the data of the corrected target distribution from the control device 25, the control device 9 is adapted to each of the filaments provided in the ion source 13 (in this case, the ion source) to match the target beam current density distribution. 13) is increased and decreased the amount of current flowing through the multifilament type ion source (S7). Finally, the processing of S6 and S7 is repeated until the beam current density distribution falls within the allowable range of the target distribution. On the other hand, the control device 9 determines whether the beam current density distribution has entered the allowable range of the target distribution.

After it is determined by the control device 9 that the beam current density distribution under adjustment has fallen within the allowable range of the target distribution, the control device 9 transmits the effect to the control device 25 (S8). At this time, the signal transmitted from the control apparatus 9 to the control apparatus 25 may be data of the adjusted beam current density distribution of the second ion beam 16. On the other hand, apart from this, it is also possible to use a special signal such as to let the control device 25 understand that the adjustment process of the beam current density distribution for the ion beam has been completed.

Receiving that the adjustment process of the beam current density distribution is complete | finished, the control apparatus 25 conveys the glass substrate 10. Specifically, in order to drive the holder 24 which supports the glass substrate 10, the motor used as the power source is rotated, and the glass substrate 10 is conveyed.

On the other hand, in the X direction, when the distance between the first ion beam 6 and the second ion beam 16 is wider than the size of the glass substrate 10, the adjustment of the beam current density distribution of the first ion beam 6 is finished. After (after the process shown by S4 in FIG. 1), you may convey the glass substrate 10 to the direction which cross | intersects the long side direction of the 1st ion beam 6. At this time, if the beam current density distribution of the 2nd ion beam 16 is adjusting, the conveyance of the glass substrate 10 will be stopped once between the 1st ion beam 6 and the 2nd ion beam 16, and a glass substrate ( Wait 10). And after completion | finish of adjustment of the beam current density distribution of the 2nd ion beam 16 (after the process shown by S8 in FIG. 1), conveyance of the glass substrate 10 is started again and it traverses the 2nd ion beam 16 Let's do it. Thus, you may make it possible to carry out conveyance of the glass substrate 10 in the control apparatus 25 between the adjustment processes of beam current density distribution. In addition, the direction crossing with the long side direction of an ion beam here is used by the meaning which included not only the direction orthogonal to the long side direction of an ion beam, but the direction which is substantially orthogonal to the long side direction of an ion beam. This is because the ion implantation treatment within the allowable range of the predetermined distribution can be realized on the glass substrate even in the direction substantially perpendicular to each other.

With such a configuration, even if the adjustment of the beam current density distribution in all the ribbon ion beams has not been completed, since the ion implantation treatment can be performed in advance using the ribbon ion beam which has already been adjusted, ion implantation by that amount The time taken for the whole process can be shortened.

Data transmission between each control device and data transmission between the user interface and the control device may use a wired telecommunication line or wireless communication.

In addition, the control apparatus 8, 9, 25 may be a single control apparatus. With a single control device, there is no need to pull out the wiring between the control devices.

On the other hand, in 1st Embodiment, a series of process from S1 to S8 demonstrated based on FIG. 1 is called a beam current density distribution adjustment process, and aims to correct the target distribution performed by the control apparatus 25 between the processes. It is called the correction process.

≪ Second Embodiment >

9, the inside of the process chamber in 2nd Embodiment which concerns on the ion implantation apparatus of this invention is shown. The appearance in the ZX plane concerning the ion implantation apparatus of FIG. 9 is the same as that of FIG. The difference from the first embodiment is that the dimensions of the first ion beam 6 and the second ion beam 16 in the Y direction are different. This can be understood by comparing FIG. 9 showing the present embodiment with FIG. 2 showing the first embodiment. And the difference of the dimension of this ion beam differs slightly in the adjustment process of a beam current density distribution, and a target correction process. However, since the other points are the same as that of 1st Embodiment, it demonstrates centering around difference with 1st Embodiment here.

In the case of FIG. 9, the irradiation area on the glass substrate by the 1st ion beam 6 and the 2nd ion beam 16 overlaps only one area | region. In more detail, in the irradiation area on the glass substrate, the area R1 to which only the first ion beam 6 is irradiated and the area R2 where both the first ion beam 6 and the second ion beam 16 overlap each other. And three regions of the region R3 to which only the second ion beam 16 is irradiated. These regions are formed on the glass substrate 10 along the Y direction, which is the long side direction of the ion beam, with dimensions of R1 to R3, respectively.

Here, an adjustment method of the beam current density distribution in each area is described below with reference to FIG. The reason to explain based on FIG. 1 is because 2nd Embodiment has the same structure as 1st Embodiment and a control apparatus.

According to the ion implantation conditions input to the user interface 26, the control apparatus 25 determines the target distribution of the beam current density distribution of the ion beam supplied from each ion beam supply apparatus 2,12. Here, the target distribution of the beam current density distribution with respect to each ion beam changes with the area | region on a glass substrate.

For example, consider a case where a uniform ion implantation treatment is performed over the entire surface of the glass substrate 10. In the individual ion beams, the target distribution of the current density distribution of the ion beams in the regions of R1 and R3 is the same, but the target distribution of the current density distribution in the region of R2 is smaller than that of R1 and R3. This is because when the target value of R2 is equal to R1 or R3, the injection amount in the region of R2 becomes larger when the respective ion beams overlap each other. This point is described also in patent document 1 mentioned as a prior art.

Therefore, the target distribution of the beam current density distribution with respect to the 1st ion beam 6 transmitted from the control apparatus 25 to the control apparatus 8 becomes different distribution in area | region R1 and R2 (S1).

Then, the current density distribution of the first ion beam 6 is adjusted so as to approach the target distribution of the beam current density distribution determined by the control device 25 (S2, S3).

When the adjustment of the beam current density distribution is finished, the result is transmitted from the control device 8 to the control device 25. The adjustment result transmitted here may be adjustment result data of beam current density distribution in two areas of R1 and R2, but may be data only in the R2 area. This is because the target distribution of the beam current density distribution of the second ion beam 16 is not corrected using the adjustment result data in the region of R1. In other words, only the adjustment data of the beam current density distributions located in the overlapping regions are used for the target correction for the next ion beam. Under such circumstances, it is possible to limit the amount of data to be transmitted. By limiting the amount of transmission data, the time required for data transmission can be omitted, and the time required for data processing can be shortened by that amount.

Next, the control device 25 corrects the target distribution of the beam current density distribution with respect to the region of R2 of the second ion beam 16. The target distribution of the beam current density distribution of the modified region of R2 and the target distribution of the beam current density distribution of the region of R3 previously prepared are transmitted to the control device 9 (S5). Here, the target distribution of the beam current density distribution with respect to the region of R3 prepared in advance is a target distribution determined by the control device 25 in accordance with the ion implantation conditions from the user interface 26.

Based on the data of the target distribution from the control device 25, the control device 9 adjusts the beam current density distribution with respect to the second ion beam 16. After completion of the adjustment, a signal indicating that the adjustment process of the beam current density distribution is completed is transmitted from the control device 9 to the control device 25 (S6 to S8).

And the control apparatus 25 receives the adjustment end signal of the beam current density distribution from the control apparatus 9, and starts conveyance of the glass substrate 10. FIG. In addition, also in this 2nd Embodiment, as described in 1st Embodiment, it receives the adjustment end signal of the beam current density distribution in each ion beam, and conveys the glass substrate 10, and it applies to the whole ion implantation process. It is good also as a structure which shortens time.

In the second embodiment, the series of processes from S1 to S8 described based on FIG. 1 is called a beam current density distribution adjusting step, and the correction of the target distribution performed by the control device 25 between the steps is a target correcting step. It is called.

≪ Third Embodiment >

10, the 3rd Embodiment which concerns on the ion implantation apparatus of this invention is shown. Also in this embodiment, the difference with 1st Embodiment is demonstrated similarly to 2nd Embodiment, and the description is abbreviate | omitted about the structure similar to 1st Embodiment.

Although the ion implantation apparatus of 1st Embodiment was equipped with two ion beam supply apparatuses, the ion implantation apparatus of this 3rd Embodiment is equipped with four ion beam supply apparatuses. This example differs from the first embodiment in that the number of ion beam supply devices is increased.

Specifically, in addition to the structure of the ion implantation apparatus 1 of FIG. 1, the 3rd ion beam supply apparatus 32 and the 4th ion beam supply apparatus 42 shown in FIG. 10 are added.

Since the structure of the 3rd, 4th ion beam supply apparatuses 32 and 42 provided further is the same as the structure of the 1st ion beam supply apparatus 2 demonstrated in 1st Embodiment, description is abbreviate | omitted. 11 shows the state when the inside of the processing chamber 11 of the ion implantation apparatus 31 of FIG. 10 is seen from the Z direction.

As compared with the first embodiment, as the number of ion beam supply devices increases, the adjustment process of the beam current density distribution and the target correction process are different. This point will be described below.

Adjustment of the beam current density distribution with respect to the 1st ion beam 6 and the 2nd ion beam 16 is the same as that of 1st Embodiment. On the other hand, after adjustment of the beam current density distribution of the 2nd ion beam 16 is complete | finished, about the control apparatus 25 from the control apparatus 9, the beam current density distribution with respect to all the ion beams as demonstrated in 1st Embodiment. No signal is sent to indicate that the adjustment of is finished. This is because in the third embodiment, the number of ion beams for which the beam current density distribution is adjusted is four. Therefore, after adjustment of the beam current density distribution with respect to the 2nd ion beam 16 is complete | finished here, the data of the adjustment result of the beam current density distribution at that time is transmitted from the control apparatus 9 to the control apparatus 25. FIG. .

The adjustment of the beam current density distribution for the third ion beam 36 is the same as the adjustment of the beam current density distribution made for the second ion beam 16. Just in case, explain this.

The control device 25 receives the adjustment result data of the beam current density distribution for the second ion beam 16, so that the target distribution of the beam current density distribution for the third ion beam 36 is corrected. Thereafter, the modified target distribution is transmitted to the control device 38 (S9).

The control device 38 adjusts the beam current density distribution of the third ion beam 36 in the beam profiler 37 so that the beam current density distribution of the third ion beam 36 approaches the target distribution in accordance with the modified target distribution. While monitoring, the amount of current flowing through the plurality of filaments provided in the ion source 33 (in this case, the ion source 33 is a multifilament type) is independently increased or decreased (S10, S11).

When the adjustment of the beam current density distribution for the third ion beam is completed, the adjustment data of the beam current density distribution at that time is transmitted from the control device 38 to the control device 25 (S12).

The control device 25 receives the adjustment result data from the control device 38 and corrects the target distribution of the beam current density distribution for the fourth ion beam 46.

Thereafter, the modified target distribution is transmitted from the control device 25 to the control device 39 (S13). And the control apparatus 39 adjusts the beam current density distribution with respect to the 4th ion beam 46 based on the correction data, and in the stage to which adjustment was complete | finished, all the control apparatus 39 from the control apparatus 39 to the control apparatus 25 were carried out. A signal indicating that the adjustment of the beam current density with respect to the ion beam has been completed is transmitted (S14 to S16).

Thereafter, the control device 25 causes the conveyance of the glass substrate 10 to start.

On the other hand, also in this third embodiment, as described in the first embodiment, the adjustment end signal of the beam current density distribution in each ion beam is received, and the glass substrate 10 is conveyed, which is applied to the entire ion implantation process. You may make it the structure of the formula which shortens a time.

Specifically, in the X direction, when the interval of each ion beam is wider than the dimension of the glass substrate 10, after completion | finish of adjustment of the beam current density distribution of the 1st ion beam 6 (process shown by S4 in FIG. 10). After that), the glass substrate 10 may be conveyed in a direction crossing the long side direction of the first ion beam 6. At this time, if the beam current density distribution of the 2nd ion beam 16 is adjusting, the conveyance of the glass substrate 10 will be stopped once between the 1st ion beam 6 and the 2nd ion beam 16, and a glass substrate ( Wait 10). And after completion | finish of adjustment of the beam current density distribution of the 2nd ion beam 16 (after the process shown by S8 in FIG. 10), conveyance of the glass substrate 10 is started again and it traverses the 2nd ion beam 16 Let's do it. Thereafter, the glass substrate 10 is conveyed in such a manner as to traverse the third ion beam 36 and the fourth ion beam 46. Such glass substrate 10 may be conveyed by the control apparatus 25.

With such a configuration, even if the adjustment of the beam current density distribution in all the ribbon ion beams is not completed, the ion implantation process can be performed in advance using the ribbon ion beam which has already been adjusted. It can shorten the whole time.

As described as the third embodiment, it can be understood that the present invention can be applied without any problem even when the number of the ion beam supply devices in the first embodiment is increased. In addition, in 3rd Embodiment, a series of process of S1-S16 demonstrated based on FIG. 10 is called a beam current density distribution adjustment process, and target correction | amendment correct | amends the target distribution performed by the control apparatus 25 between the processes. It is called fair.

≪ Fourth Embodiment &

12 shows an internal view of the processing chamber of the ion implantation apparatus according to the fourth embodiment. Except for the number of ion beam supply apparatuses, this embodiment is the same as the second embodiment. In addition, in 4th Embodiment, the structure of the ion implantation apparatus in a ZX plane is the same as that shown in FIG.

In this embodiment, the number of ion beam supply devices increases, so that the number of ion beams constituting the overlapping regions on the glass substrate is different from that in the second embodiment.

Referring to FIG. 12, in the region of R1, a part of the first ion beam 6 and a part of the third ion beam 36 overlap each other. And. In the region of R2, a part of the first ion beam 6, a part of the second ion beam 16, a part of the third ion beam 36 and a part of the fourth ion beam 46 overlap each other. Finally, part of the second ion beam and part of the fourth ion beam 46 overlap each other in the region of R3.

In contrast, in the second embodiment shown in FIG. 9, the ion beams are not overlapped with the regions of R1 and R3. From this difference, since the adjustment method of beam current density distribution differs, the point is demonstrated. On the other hand, the irradiation regions R1 to R3 of the ion beams on the glass substrate have dimensions of R1 to R3 on the glass substrate 10 along the Y direction, which is the long side direction of the ion beam, as described in FIG. 9. Formed.

Since the configuration of the control device and the like does not change from that of the ion implantation device 31 shown in FIG. 10, the description will be made based on this. According to the ion implantation condition input to the user interface 26, the control apparatus 25 transmits data used as the adjustment target of the beam current density distribution with respect to the 1st ion beam 6 (S1). At this time, the data of the target value (distribution) of the beam current density distribution corresponding to the area | region of R1 and the area | region of R2 differ. Since the reason is explained in the part of Embodiment 2, detailed description is abbreviate | omitted here.

Thereafter, the control device 8 adjusts the beam current density distribution with respect to the first ion beam 6 so as to be close to the target distribution of the beam current density distribution (S2, S3). After the adjustment is completed, the adjustment result is transmitted from the control device 8 to the control device 25 (S4). The adjustment result transmitted to the control apparatus 25 here is the adjustment result of the current density distribution corresponding to the area | region of R1 and the area | region of R2. In the second embodiment, the adjustment result corresponding to only the region of R2 may be transmitted, but in the fourth embodiment, it is insufficient. In the fourth embodiment, since the ion beams overlap in the region of R1, the adjustment result of the current density distribution corresponding to both R1 and R2 should be transmitted.

Next, adjustment of the current density distribution with respect to the second ion beam is made. The adjustment result of the beam current density distribution of the first ion beam 6 is received, and the control device 25 corrects the target distribution of the current density distribution with respect to the second ion beam. However, only correction is made here in the beam current density distribution corresponding to the region of R2.

The target distribution of the beam current density distribution corresponding to the region of R3 receives the input of the ion implantation conditions from the user interface 26, and no correction is made from the target distribution initially determined by the control device 25. . This is because the beam current density distribution corresponding to the region of R3 is not adjusted in the adjustment of the beam current density distribution of the first ion beam 6. In other words, the region of R3 does not overlap with the first ion beam in which the beam current density distribution is first adjusted.

On the basis of the target distribution of the beam current density distribution for the second ion beam, which has been partially modified, adjustment of the beam current density distribution of the second ion beam 16 is made, and after completion of the adjustment, data of the adjustment result is output to the control device 9 ) Is transmitted to the control device 25 (S5 to S8).

The control device 25 modifies the target distribution of the beam current density distribution for the third ion beam 36. As the target distribution of the beam current density distribution with respect to the region of R2 of the third ion beam 36, an adjustment result corresponding to R2 of the second ion beam 16 whose beam current density distribution is adjusted is used. And as a target distribution of the beam current density distribution with respect to the area | region of R1 of the 3rd ion beam 36, the adjustment result corresponding to R1 of the 1st ion beam 6 with which the beam current density distribution was adjusted is used.

The current density distribution of the third ion beam 36 is adjusted using the modified distribution of the beam current density distribution in this way, and after the adjustment is completed, the adjustment result is transferred from the control device 38 to the control device 25. Transmit (S9 to S12).

Thereafter, the beam current density distribution with respect to the fourth ion beam 46 is adjusted in the same manner as the adjustment of the beam current density distribution with respect to the third ion beam 36 (S13 to S15). Then, the controller 25 notifies that the adjustment of the beam current density distributions for all the ion beams has been completed (S16).

Thereafter, the control device 25 causes the conveyance of the glass substrate 10 to start. On the other hand, also in this 4th embodiment, as described in 3rd embodiment, it receives the adjustment end signal of the beam current density distribution in each ion beam, and conveys the glass substrate 10, and it applies to the whole ion implantation process. It is good also as a structure which shortens time.

As described as the fourth embodiment, it can be understood that the present invention can be applied without any problem even when the number of the ion beam supply devices in the second embodiment is increased. On the other hand, in 4th Embodiment, a series of process of S1-S16 demonstrated based on FIG. 10 is called a beam current density distribution adjustment process, and target correction is correct | amended by the control apparatus 25 between these processes. It is called fair.

<Other Modifications>

Although the difference with respect to 1st Embodiment was demonstrated about 2nd, 3rd embodiment centering on the difference with respect to 2nd Embodiment about the 4th embodiment, about the structure common to 1st Embodiment which is fundamental, It goes without saying that the various modifications described in the first embodiment can be applied.

In the first to fourth embodiments of the present invention, an example of realizing a uniform ion implantation amount distribution over the entire surface of the glass substrate has been described. For example, as described in FIG. 9 of Japanese Patent Application Laid-Open No. 2005-235682, which is a known technique. Similarly, distribution of injection amount may be made different along the conveyance direction of a glass substrate. Even with such an injection amount distribution, of course, the present invention can be applied when the predetermined injection amount distribution is realized by overlapping the ion beams.

In the first to fourth embodiments of the present invention, the processing chamber 11 is one room, but this may be formed as a separate room for each ion beam supply device. In that case, you may provide the process chamber for waiting a board | substrate between each process chamber. Furthermore, the gate valve may be provided between each processing chamber or between a processing chamber and a waiting chamber, and the atmosphere of each room may be adjusted independently.

In addition, although the conveyance speed of a glass substrate was demonstrated and demonstrated in the 1st-4th embodiment of this invention, this conveyance speed may be made variable. For example, the conveyance speed of a glass substrate may be changed for every ion beam, and the conveyance speed may be changed according to a specific function while the glass substrate traverses an ion beam.

In addition, as known in the art, the current flowing through the multifilament is adjusted, the voltage applied to the electrode of the field lens is adjusted, or the current flowing through the coil of the magnetic field lens is adjusted to adjust the current flowing in the long side direction of the ion beam. Even if the beam current density distribution is adjusted so that it may become arbitrary nonuniform distribution. The conveyance of a glass substrate in the range which does not deviate from the summary of this invention by adjustment of the beam current density distribution at the time of overlapping the irradiation area | region on an glass substrate of an ion beam, and realizing a predetermined injection amount distribution on a glass substrate. Of course, any speed or current density distribution may be good. Incidentally, various modifications and changes may be made within the scope not departing from the gist of the present invention other than the above.

1: ion implantation apparatus 2: first ion beam supply apparatus
6: first ion beam 8: control device
9: control device 10: glass substrate
12. Second ion beam supply device 16 Second ion beam
25 control device

Claims (4)

A plurality of ion beam supply devices for supplying a plurality of ribbon ion beams into a processing chamber,
A beam profiler disposed in the processing chamber for individually measuring a beam current density distribution in a long side direction of the plurality of ribbon ion beams;
In the ion implantation device which is provided for each of the ion beam supply device, and provided with a beam current density distribution adjusting means for adjusting the beam current density distribution measured by the beam profiler,
The beam current density distribution adjusting means for the plurality of ribbon ion beams in a predetermined order so as to be a predetermined beam current density distribution determined for each ion beam based on a measurement result of the beam current density distribution by the beam profiler Beam current density distribution adjusting process to adjust the
The adjustment result of the beam current density distribution in the ion beam in which the beam current density distribution has been previously adjusted before the beam current density distribution is adjusted between the beam current density distribution adjusting steps and before the second and subsequent ion beams is made. A target correction step of correcting the predetermined beam current density distribution serving as an adjustment target in the ion beam from which the beam current density distribution is now adjusted;
And a glass substrate conveying step of conveying the glass substrate in a direction intersecting a long side direction of the plurality of ribbon ion beams in the processing chamber. The said glass substrate conveyance process is performed after completion | finish of the said beam current density distribution adjustment process, The ion implantation method of Claim 1 characterized by the above-mentioned. 2. The ribbon type according to claim 1, wherein the order in which the plurality of ribbon type ion beams are adjusted coincides with the conveying direction of the glass substrate, and the beam type has been received after the adjustment of the beam current density distribution for each ribbon type ion beam has been completed. The ion implantation method characterized by the conveyance of the said glass substrate in the direction crossing with the long side direction of an ion beam. A plurality of ion beam supply devices for supplying a plurality of ribbon ion beams into a processing chamber,
A beam profiler disposed in the processing chamber for individually measuring a beam current density distribution in a long side direction of the plurality of ribbon ion beams;
An ion implantation apparatus provided separately for each of the ion beam supply devices, and having a beam current density distribution adjusting means for adjusting the beam current density distribution measured by the beam profiler,
The beam current density distribution adjusting means for the plurality of ribbon ion beams in a predetermined order so as to be a predetermined beam current density distribution determined for each ion beam based on a measurement result of the beam current density distribution by the beam profiler Adjust the
The adjustment of the beam current density distribution in the ion beam in which the adjustment of the beam current density distribution has been made before the adjustment of the beam current density distribution is made between adjusting the beam current density distribution adjusting means and before the adjustment of the beam current density distribution is also performed for the second and subsequent ion beams. Using the result, the predetermined beam current density distribution which is the adjustment target for the ion beam from which the beam current density distribution is adjusted from now on, is modified,
And a control device configured to convey the glass substrate in a direction that intersects the long side direction of the plurality of ribbon ion beams in the processing chamber.

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