CN110735116A - Negative ion irradiation device and method for controlling negative ion irradiation device - Google Patents

Negative ion irradiation device and method for controlling negative ion irradiation device Download PDF

Info

Publication number
CN110735116A
CN110735116A CN201910648876.XA CN201910648876A CN110735116A CN 110735116 A CN110735116 A CN 110735116A CN 201910648876 A CN201910648876 A CN 201910648876A CN 110735116 A CN110735116 A CN 110735116A
Authority
CN
China
Prior art keywords
plasma
compound semiconductor
negative ion
ion irradiation
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910648876.XA
Other languages
Chinese (zh)
Inventor
北见尚久
酒见俊之
山本哲也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ltd
Original Assignee
Sumitomo Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Publication of CN110735116A publication Critical patent/CN110735116A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • External Artificial Organs (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention provides negative ion irradiation devices and control methods of the negative ion irradiation devices, which can improve the production efficiency and quality of a compound semiconductor.A control unit (50) controls a gas supply unit (40) to supply gas into a vacuum chamber (10). The gas supply unit (40) supplies gas containing the same elements as the ions forming the compound semiconductor (11). The same elements as the ions forming the compound semiconductor (11) are present in the vacuum chamber (10). The control unit (50) controls a plasma generation unit (14) to generate plasma (P) and electrons in the vacuum chamber (10), and stops the generation of the plasma (P), thereby generating negative ions from the electrons and the gas and irradiating the negative ions onto the compound semiconductor (11).

Description

Negative ion irradiation device and method for controlling negative ion irradiation device
Technical Field
The present application claims priority based on japanese patent application No. 2018-134880, applied 7/18/2018. The entire contents of this Japanese application are incorporated by reference into this specification.
The present invention relates to kinds of negative ion irradiators and a method for controlling the negative ion irradiators.
Background
Conventionally, a compound semiconductor described in patent document 1 has been known as a compound semiconductor. Crystal defects increase on a single crystal substrate constituting such a compound semiconductor. In patent document 1, the manufacturing method is designed to reduce crystal defects of a single crystal substrate.
Patent document 1: japanese patent laid-open No. 2014-22711
However, when a single crystal substrate is manufactured, it is difficult to prevent the generation of crystal defects even if the manufacturing method is designed, and further, when crystal defects are generated on the single crystal substrate, there is no practical method for filling up the crystal defects, and therefore, the crystal defects of the single crystal substrate are used in a state of being maintained as they are.
Accordingly, an object of the present invention is to provide types of negative ion irradiation apparatuses and methods for controlling the negative ion irradiation apparatuses, which can improve the production efficiency and quality of compound semiconductors.
Disclosure of Invention
In order to solve the above problem, a negative ion irradiation apparatus according to the present invention irradiates a compound semiconductor with negative ions, the negative ion irradiation apparatus including: a chamber in which negative ions are generated; a gas supply unit configured to supply a gas containing the same element as an ion forming the compound semiconductor; a plasma generating unit that generates plasma and electrons in the chamber; a disposing section for disposing the compound semiconductor; and a control unit for controlling the negative ion irradiation device, wherein the control unit controls the gas supply unit to supply gas into the chamber, and the control unit controls the plasma generation unit to generate plasma and electrons in the chamber, and stops the generation of plasma to generate negative ions from the electrons and gas, and irradiates the negative ions to the compound semiconductor.
In the negative ion irradiation device of the present invention, the control unit controls the gas supply unit to supply the gas into the chamber. The gas supply unit supplies a gas containing the same element as the ion forming the compound semiconductor. Therefore, the same elements as the ions forming the compound semiconductor exist in the chamber. The control unit controls the plasma generation unit to generate plasma and electrons in the chamber, and stops the generation of the plasma to generate negative ions from the electrons and the gas, and irradiates the negative ions to the compound semiconductor. Thereby, negative ions of the same element as ions forming the compound semiconductor are irradiated to the compound semiconductor. Thus, negative ions enter crystal defects caused by negative ions in the compound semiconductor, and the crystal defects can be filled. This can fill in crystal defects of the compound semiconductor, and thus can improve the quality of the compound semiconductor. Further, even if the grade of the compound semiconductor is insufficient before the negative ion irradiation, the quality can be improved by the negative ion irradiation, and therefore the necessity of screening the grade of the single crystal substrate in advance can be reduced. As described above, the efficiency and quality of manufacturing the compound semiconductor can be improved.
A method for controlling an anion irradiation apparatus according to the present invention is a method for controlling an anion irradiation apparatus that irradiates a compound semiconductor with anions, the anion irradiation apparatus including: a chamber in which negative ions are generated; a gas supply unit configured to supply a gas containing the same element as an ion forming the compound semiconductor; a plasma generating unit that generates plasma and electrons in the chamber; a disposing section for disposing the compound semiconductor; and a control unit for controlling the negative ion irradiation device, wherein the control method of the negative ion irradiation device comprises: a gas supply step of controlling the gas supply unit by the control unit to supply gas into the chamber; and a negative ion irradiation step of generating plasma and electrons in the chamber by controlling the plasma generation unit by the control unit, generating negative ions from the electrons and the gas by stopping the generation of the plasma, and irradiating the compound semiconductor with the negative ions.
According to the method for controlling the negative ion irradiation apparatus of the present invention, the same operation and effect as those of the negative ion irradiation apparatus can be obtained.
Effects of the invention
According to the present invention, types of negative ion irradiators and a method for controlling a negative ion irradiator that can improve the production efficiency and quality of a compound semiconductor can be provided.
Drawings
Fig. 1 is a schematic cross-sectional view showing a structure of an anion irradiation apparatus according to an embodiment of the present invention, and is a diagram showing an operation state at the time of plasma generation.
Fig. 2 is a schematic cross-sectional view showing the structure of the negative ion irradiation device of fig. 1, and shows an operation state when plasma stops.
Fig. 3 is a flowchart showing a control method of the negative ion irradiation device according to the present embodiment.
Fig. 4 is a view schematically showing the state in which negative ions are irradiated to the compound semiconductor.
Fig. 5 is a diagram schematically showing a state in which positive ions are implanted into a compound semiconductor as a comparative example.
Fig. 6 is a view schematically showing the state of a compound semiconductor when negative ions are implanted.
In the figure: 1-negative ion irradiation apparatus (negative ion irradiation apparatus), 3-transport mechanism (arrangement section), 7-plasma gun, 10-vacuum chamber, 11-compound semiconductor, 14-plasma generation section, 40-gas supply section, 50-control section, P-plasma.
Detailed Description
Hereinafter, an anion irradiation apparatus according to an embodiment of the present invention will be described with reference to the drawings, and in the drawings, the same components are denoted by the same reference numerals and redundant description thereof will be omitted.
First, the structure of the negative ion irradiation device according to the embodiment of the present invention will be described with reference to fig. 1 and 2. Fig. 1 and 2 are schematic cross-sectional views showing the structure of the negative ion irradiation device according to the present embodiment. Fig. 1 shows an operation state when plasma is generated, and fig. 2 shows an operation state when plasma is stopped.
As shown in fig. 1 and 2, the negative ion irradiation apparatus 1 of the present embodiment is an apparatus that applies a film formation technique for a so-called ion plating method to negative ion irradiation. For convenience of explanation, fig. 1 and 2 show an XYZ coordinate system. The Y-axis direction is a direction in which a compound semiconductor described later is transported. The X-axis direction is the thickness direction of the compound semiconductor. The Z-axis direction is a direction orthogonal to the Y-axis direction and the X-axis direction.
The negative ion irradiation device 1 may be a so-called horizontal type negative ion irradiation device in which the compound semiconductor 11 is disposed in the vacuum chamber 10 and transported such that the thickness direction of the compound semiconductor 11 is substantially vertical, in which case the Z-axis and Y-axis directions are horizontal and the X-axis direction is vertical and the thickness direction, or the negative ion irradiation device 1 may be a so-called vertical type negative ion irradiation device in which the compound semiconductor 11 is disposed in the vacuum chamber 10 and transported in a state in which the compound semiconductor 11 is erected or inclined from the erected state such that the thickness direction of the compound semiconductor 11 is horizontal (in fig. 1 and 2, the X-axis direction is horizontal and the thickness direction of the compound semiconductor 11, the Y-axis direction is horizontal and the Z-axis direction is vertical, and the negative ion irradiation device according to the embodiment of the present invention will be described below by way of example as a horizontal type negative ion irradiation device.
The negative ion irradiation device 1 includes a vacuum chamber 10, a transport mechanism (arrangement portion) 3, a plasma generation portion 14, a gas supply portion 40, a circuit portion 34, a voltage application portion 90, and a control portion 50.
The vacuum chamber 10 is a member for accommodating the compound semiconductor 11 and performing a film formation process. The vacuum chamber 10 has a transport chamber 10a for transporting the compound semiconductor 11, a generation chamber 10b for generating negative ions, and a plasma port 10c for accommodating the plasma P irradiated in a beam shape from the plasma gun 7 into the vacuum chamber 10. The transfer chamber 10a, the generation chamber 10b, and the plasma port 10c communicate with each other. The conveyance chamber 10a is set in a predetermined conveyance direction (arrow a in the figure) (along the Y axis). The vacuum chamber 10 is made of a conductive material and is connected to a ground potential. The conveyance chamber 10a is provided with a heating portion 30 for heating the compound semiconductor 11. The heating portion 30 is provided on the upstream side in the conveying direction of the communicating portion with the production chamber 10b in the conveying chamber 10 a. Therefore, the negative ions from the generation chamber 10b are irradiated to the heated compound semiconductor 11.
The production chamber 10b has, as a wall portion 10W, pairs of side walls along the conveyance direction (arrow a), pairs of side walls 10h and 10i along the direction (Z-axis direction) intersecting the conveyance direction (arrow a), and a bottom wall 10j disposed so as to intersect the X-axis direction.
The conveyance mechanism 3 conveys the compound semiconductor holding member 16 holding the compound semiconductor 11 in a state facing the production chamber 10b in the conveyance direction (arrow a). The conveyance mechanism 3 functions as a placement unit for placing the compound semiconductor 11. For example, the compound semiconductor holding member 16 is a frame that holds the outer peripheral edge of the compound semiconductor 11. The conveyance mechanism 3 is constituted by a plurality of conveyance rollers 15 provided in the conveyance chamber 10 a. The conveying rollers 15 are arranged at equal intervals in the conveying direction (arrow a), and convey in the conveying direction (arrow a) while supporting the compound semiconductor holding member 16. The compound semiconductor 11 is a plate-shaped substrate. The material and the like of the compound semiconductor 11 will be described later.
Next, the structure of the plasma generating section 14 will be described in detail. The plasma generator 14 generates plasma and electrons in the vacuum chamber 10. The plasma generation unit 14 includes a plasma gun 7, a turning coil 5, and a hearth mechanism 2.
The plasma gun 7 is, for example, a pressure gradient type plasma gun, and a main body thereof is connected to the generation chamber 10b through a plasma port 10c provided in a side wall of the generation chamber 10 b. The plasma gun 7 generates plasma P in the vacuum chamber 10. The plasma P generated in the plasma gun 7 is emitted in a beam shape from the plasma port 10c into the generation chamber 10 b. Thereby, the plasma P is generated in the generation chamber 10 b.
The end of the plasma gun 7 is closed by a cathode 60, a 1 st intermediate electrode (grid) 61 and a 2 nd intermediate electrode (grid) 62 are concentrically arranged between the cathode 60 and the plasma port 10c, a ring-shaped permanent magnet 61a for converging the plasma P is built in the 1 st intermediate electrode 61, and an electromagnet coil 62a is also built in the 2 nd intermediate electrode 62 for converging the plasma P.
When the plasma gun 7 generates negative ions, plasma P is intermittently generated in the generation chamber 10 b. Specifically, the plasma gun 7 is controlled by a control unit 50 described later so as to intermittently generate plasma P in the generation chamber 10 b. This control will be described in detail in the description of the control unit 50.
The steering coil 5 is provided around the plasma port 10c to which the plasma gun is attached. The turning coil 5 guides the plasma P into the generation chamber 10 b. The steering coil 5 is energized by a power supply for steering coils (not shown).
The hearth mechanism 2 is a mechanism for guiding the plasma P from the plasma gun to a desired position. The hearth mechanism 2 has a main hearth 17 and a ring hearth 6. When the negative ion irradiation device 1 is used to form a film, the main furnace 17 functions as an anode for holding a film forming material. However, when the negative ion generation is performed, the plasma is guided to the ring furnace cylinder 6 so that the plasma P is not guided to the film forming material. Therefore, when the negative ion irradiation apparatus 1 performs only negative ion irradiation without film formation, the film forming material may not be held by the main furnace 17. Alternatively, the hearth mechanism 2 may have a structure for guiding only the plasma P.
The ring hearth 6 is an anode having an electromagnet for inducing (inducing) the plasma P. The ring hearth 6 is disposed around the filling portion 17a of the main hearth 17. The ring hearth 6 includes an annular coil 9, an annular permanent magnet portion 20, and an annular container 12, and the coil 9 and the permanent magnet portion 20 are accommodated in the container 12. In the present embodiment, the coil 9 and the permanent magnet portion 20 are provided in this order in the X-axis negative direction when viewed from the conveyance mechanism 3, but the permanent magnet portion 20 and the coil 9 may be provided in this order in the X-axis negative direction.
The gas supply unit 40 is disposed outside the vacuum chamber 10. The gas supply unit 40 supplies gas into the vacuum chamber 10 through a gas supply port 41 provided in a side wall (for example, a side wall 10h) of the generation chamber 10 b. Specific examples of the gas will be described later.
The position of the gas supply port 41 is preferably a position near the boundary between the generation chamber 10b and the transport chamber 10 a. At this time, since the gas from the gas supply unit 40 can be supplied to the vicinity of the boundary between the generation chamber 10b and the transport chamber 10a, negative ions to be described later are generated in the vicinity of the boundary. Therefore, the generated negative ions can be appropriately injected into the compound semiconductor 11 in the transport chamber 10 a. The position of the gas supply port 41 is not limited to the vicinity of the boundary between the generation chamber 10b and the transport chamber 10 a.
The circuit unit 34 includes a variable power source 80, a 1 st wiring 71, a 2 nd wiring 72, resistors R1 to R4, and short-circuit switches SW1 and SW 2.
The variable power supply 80 applies a negative voltage to the cathode 60 of the plasma gun 7 and a positive voltage to the main hearth 17 of the hearth mechanism 2 through the vacuum chamber 10 at the ground potential. Thereby, the variable power source 80 generates a potential difference between the cathode 60 of the plasma gun 7 and the main hearth 17 of the hearth mechanism 2.
The 1 st wire 71 electrically connects the cathode 60 of the plasma gun 7 and the negative potential side of the variable power supply 80. The 2 nd wire 72 electrically connects the main hearth 17 (anode) of the hearth mechanism 2 and the positive potential side of the variable power supply 80.
The end of the resistor R1 is electrically connected to the 1 st intermediate electrode 61 of the plasma gun 7, and the other end is electrically connected to the variable power supply 80 via the 2 nd wiring 72, that is, the resistor R1 is connected in series between the 1 st intermediate electrode 61 and the variable power supply 80.
The end of the resistor R2 is electrically connected to the 2 nd intermediate electrode 62 of the plasma gun 7, and the other end is electrically connected to the variable power supply 80 via the 2 nd wiring 72, that is, the resistor R2 is connected in series between the 2 nd intermediate electrode 62 and the variable power supply 80.
The end of the resistor R3 is electrically connected to the wall portion 10W of the generation chamber 10b, and the other end is electrically connected to the variable power source 80 via the 2 nd wiring 72, that is, the resistor R3 is connected in series between the wall portion 10W of the generation chamber 10b and the variable power source 80.
The resistor R4 has a end electrically connected to the ring furnace cylinder 6 and another end electrically connected to the variable power source 80 via the 2 nd wiring 72, i.e., the resistor R4 is connected in series between the ring furnace cylinder 6 and the variable power source 80.
The short-circuit switches SW1 and SW2 are switching units that are switched to the ON/OFF state by receiving a predetermined signal from the control unit 50.
The short-circuit switch SW1 is connected in parallel with the resistor R2. The short switch SW1 is in an OFF state when the plasma P is generated. Thereby, the 2 nd intermediate electrode 62 and the variable power supply 80 are electrically connected to each other via the resistor R2, and thus it is difficult for current to flow between the 2 nd intermediate electrode 62 and the variable power supply 80. As a result, the plasma P from the plasma gun 7 is emitted into the vacuum chamber 10. In addition, when the plasma P from the plasma gun 7 is emitted into the vacuum chamber 10, instead of making it difficult for the current to flow to the 2 nd intermediate electrode 62, it is possible to make it difficult for the current to flow to the 1 st intermediate electrode 61. At this time, the short-circuit switch SW1 is connected to the 1 st intermediate electrode 61 side instead of the 2 nd intermediate electrode 62 side.
ON the other hand, , when the plasma P is stopped, the short-circuit switch SW1 is turned ON, and thereby, the electrical connection between the 2 nd intermediate electrode 62 and the variable power source 80 is short-circuited, and thus, a current flows between the 2 nd intermediate electrode 62 and the variable power source 80, that is, a short-circuit current flows to the plasma gun 7, and as a result, the plasma P from the plasma gun 7 is not emitted into the vacuum chamber 10.
When negative ions are generated, the controller 50 switches the ON/OFF state of the short-circuit switch SW1 at predetermined intervals, thereby intermittently generating plasma P from the plasma gun 7 in the vacuum chamber 10. That is, the short-circuit switch SW1 is a switching unit that switches between supply and interruption of the plasma P in the vacuum chamber 10.
The short-circuit switch SW2 is connected in parallel to the resistor R4, the ON/OFF state of the short-circuit switch SW2 is switched by the control unit 50 depending ON whether the plasma P is introduced to the main furnace cylinder 17 or the ring furnace cylinder 6, when the short-circuit switch SW2 is in the ON state, the current flows more easily to the ring furnace cylinder 6 than to the main furnace cylinder 17 because the electrical connection between the ring furnace cylinder 6 and the variable power source 80 is short-circuited, thereby the plasma P is easily introduced to the ring furnace cylinder 6, and when the short-circuit switch SW2 is in the OFF state, the ring furnace cylinder 6 and the variable power source 80 are electrically connected via the resistor R4, so the current flows more easily to the main furnace cylinder 17 than to the ring furnace cylinder 6, and the plasma P is easily introduced to the main furnace cylinder 17.
The voltage application unit 90 can apply a positive voltage to the compound semiconductor (object) 11 after film formation. The voltage applying unit 90 includes the bias circuit 35 and the trolley wire 18.
The bias circuit 35 is a circuit for applying a positive bias voltage to the compound semiconductor 11 after film formation, and the bias circuit 35 includes a bias power supply 27 for applying a positive bias voltage (hereinafter, simply referred to as "bias voltage") to the compound semiconductor 11, a 3 rd wiring 73 for electrically connecting the bias power supply 27 and the trolley wire 18, and a short-circuit switch sw3 provided in the 3 rd wiring 73, the bias power supply 27 applies a voltage signal (periodic electric signal) as a rectangular wave that periodically increases or decreases as the bias voltage, the bias power supply 27 is configured to be able to change the frequency of the applied bias voltage by the control of the control unit 50, the end of the 3 rd wiring 73 is connected to the positive potential side of the bias power supply 27, and the end is connected to the trolley wire 18, whereby the 3 rd wiring 73 electrically connects the trolley wire 18 and the bias power supply 27.
The short-circuit switch SW3 is connected in series between the trolley wire 18 and the positive potential side of the bias power supply 27 through the 3 rd wiring 73. The short-circuit switch SW3 is a switching unit that switches whether or not a bias voltage is applied to the trolley wire 18. The short-circuit switch SW3 is switched to its ON/OFF state by the control unit 50. The short-circuit switch SW3 is turned ON at a predetermined timing when negative ions are generated. When the short-circuit switch SW3 is in the ON state, the trolley wire 18 and the positive potential side of the bias power supply 27 are electrically connected to each other, and a bias voltage is applied to the trolley wire 18.
In addition, , the short-circuit switch SW3 is turned OFF at a predetermined timing when the negative ions are generated, and when the short-circuit switch SW3 is turned OFF, the trolley wire 18 and the bias power supply 27 are electrically disconnected from each other, and no bias voltage is applied to the trolley wire 18.
The trolley wire 18 is a wire for supplying power to the compound semiconductor holding member 16. The trolley wire 18 extends in the conveying direction (arrow a) in the conveying chamber 10 a. The trolley wire 18 is in contact with a power supply brush 42 provided on the compound semiconductor holding member 16, and thereby supplies power to the compound semiconductor holding member 16 through the power supply brush 42. The trolley wire 18 is made of, for example, a stainless steel wire or the like.
The Control Unit 50 is a device for controlling the entire negative ion irradiation device 1, and includes an ECU [ Electronic Control Unit: an electronic control unit ]. The ECU is a CPU [ Central Processing Unit: central processing unit ], ROM [ Read Only Memory: read only Memory ], RAM [ Random Access Memory: random access memory ], CAN [ Controller Area Network: controller area network ] communication circuits, and the like. In the ECU, various functions are realized, for example, by loading a program stored in the ROM into the RAM and executing the program loaded into the RAM by the CPU. The ECU may be constituted by a plurality of electronic units.
The controller 50 is disposed outside the vacuum chamber 10. The control unit 50 includes a gas supply control unit 51 that controls the supply of the gas by the gas supply unit 40, a plasma control unit 52 that controls the generation of the plasma P by the plasma generation unit 14, and a voltage control unit 53 that controls the application of the voltage by the voltage application unit 90.
The gas supply controller 51 controls the gas supplier 40 to supply gas into the generation chamber 10 b. Next, the plasma control unit 52 of the control unit 50 controls the plasma generation unit 14 to intermittently generate the plasma P from the plasma gun 7 in the generation chamber 10 b. For example, the control unit 50 intermittently generates the plasma P from the plasma gun 7 in the generation chamber 10b by switching the ON/OFF state of the short-circuit switch SW1 at predetermined intervals.
When the short-circuit switch SW1 is in the OFF state (the state of fig. 1), the plasma P from the plasma gun 7 is emitted into the generation chamber 10b, and therefore the plasma P is generated in the generation chamber 10 b. The plasma P contains neutral particles, positive ions, negative ions (when a negative gas such as oxygen is present), and electrons as constituent substances. Therefore, electrons are generated in the generation chamber 10 b. When the short-circuit switch SW1 is in the ON state (the state of fig. 2), the plasma P from the plasma gun 7 is not emitted into the generation chamber 10b, and therefore the electron temperature of the plasma P in the generation chamber 10b is rapidly decreased. Therefore, the electrons are easily attached to the particles of the gas supplied into the generation chamber 10 b. Thereby, negative ions are efficiently generated in the generation chamber 10 b.
The control unit 50 controls the application of the voltage by the voltage application unit 90. The control unit 50 applies a voltage at a predetermined timing (for example, a timing to stop the plasma P) by the voltage applying unit 90. The timing for starting the application of the voltage by the voltage application unit 90 is set in advance by the control unit 50. The voltage applying unit 90 applies a positive bias voltage to the compound semiconductor 11, and negative ions in the vacuum chamber 10 are guided to the compound semiconductor 11. Thereby, negative ions are irradiated to the compound semiconductor.
Here, the relationship between the compound semiconductor 11 and the negative ions will be described. The compound semiconductor 11 is formed of a Cation (Cation) and an Anion (Anion). Such a compound semiconductor 11 is irradiated with negative ions containing the same element as the negative ions forming the compound semiconductor 11. The gas supplied by the gas supply unit 40 contains the same element as the anion forming the compound semiconductor 11. The gas also contains a rare gas such as Ar.
For example, the compound semiconductor 11 is composed of ZnO, Ga2O3While forming, irradiating O-And (5) plasma negative ions. The gas in the gas supply part 40 contains O2And the like. When the compound semiconductor 11 is formed of AlN, GaN, or the like, NH is irradiated-And nitride negative ions. In addition, the implanted H is removed by annealing. The gas of the gas supply unit 40 contains NH2、NH4And the like. When the compound semiconductor 11 is formed of SiC or the like, irradiation with C is performed-、Si-And (5) plasma negative ions. The gas in the gas supply part 40 contains C2H6、SiH4And the like. In addition, when the compound semiconductor 11 is SiC, Si can also be negative ions, and therefore the positive ion side can also be irradiated with negative ions.
Further, an atom or molecule having a positive electron affinity is likely to be a negative ion. Therefore, when such an atom or molecule anion is contained in the compound semiconductor 11, a negative ion containing the same atom or molecule can be irradiated. Examples of the easily negatively ionizable group include H, He, C, O, F, Si, S, Cl, Br, I and H2、O2、Cl2、Br2、I2、CH、OH、CN、HCl、HBr、NH2、N2O、NO2、CCl4、SF6And the like.
Next, a control method of the negative ion irradiation device 1 will be described with reference to fig. 3. Fig. 3 is a flowchart showing a control method of the negative ion irradiation device 1 according to the present embodiment. Further, here, the compound semiconductor 11 is formed of ZnO to be irradiated with O-The case of negative ions of (2) is described as an example.
As shown in fig. 3, the method of controlling the negative ion irradiation apparatus 1 includes a gas supply step S10, a plasma generation step S20( portion of the negative ion irradiation step), and a voltage application step S30( portion of the negative ion irradiation step), each of which is executed by the controller 50.
First, the gas supply controller 51 of the controller 50 controls the gas supplier 40 to supply a gas into the vacuum chamber 10 (gas supply step S10). Thus, O is present in the generation chamber 10b of the vacuum chamber 102The gaseous state of (c). Then, the plasma generation process S20 is performed.
The plasma controller 52 of the controller 50 controls the plasma generator 14 to generate the plasma P and the electrons in the vacuum chamber 10, and stops the generation of the plasma P to generate the negative ions from the electrons and the gas (plasma generating step S20). When the plasma P and the electrons are generated in the generation chamber 10b of the vacuum chamber 10, "O" is performed by the plasma P2+e-→2O+e-"is used herein. When the generation of the plasma P is stopped, the electron temperature is rapidly decreased in the generation chamber 10b, and "O + e" is performed-→O-"is used herein. Is executed at a predetermined timing after the plasma generation process S20 is executedAnd a voltage applying step S30. In addition, strictly speaking, negative ions are generated also during plasma generation, and when negative ions are irradiated, negative ions generated during plasma generation are also irradiated.
The voltage control unit 53 of the control unit 50 controls the voltage application unit 90 and applies a bias voltage to the compound semiconductor 11 (voltage application step S30). Thereby, O in the chamber 10b is generated-The negative ions 81 are directed toward the compound semiconductor 11 side and irradiated to the compound semiconductor 11 (refer to fig. 2 and 4).
Next, the operation and effect of the negative ion irradiation device 1 and the control method thereof according to the present embodiment will be described.
In the negative ion irradiation device 1 of the present embodiment, the controller 50 controls the gas supplier 40 to supply gas into the vacuum chamber 10. The gas supply unit 40 supplies a gas containing the same element as the ion forming the compound semiconductor 11. Therefore, the same elements as the ions forming the compound semiconductor 11 are present in the vacuum chamber 10. The control unit 50 controls the plasma generation unit 14 to generate plasma P and electrons in the vacuum chamber 10, and stops the generation of the plasma P to generate negative ions from the electrons and gas, and irradiates the negative ions onto the compound semiconductor 11.
For example, as shown in fig. 4(a), negative ions 81 of the same element as the ions forming the compound semiconductor 11 are irradiated to the compound semiconductor 11. The negative ions 81 enter from the surface 11a of the compound semiconductor 11 into the inside. As a result, the negative ions 81 enter the crystal defect 85 in the compound semiconductor 11 due to the negative ions, and the crystal defect 85 can be filled as shown in fig. 4 (b).
Here, with reference to fig. 5 and 6, the advantage of irradiation with negative ions with respect to the compound semiconductor 11 will be described. Fig. 5 and 6 show an ion bonding structure of the positive ions 86 and the negative ions 87 that form the compound semiconductor 11. Fig. 5 is a diagram schematically showing a state in which positive ions 83 are implanted into a compound semiconductor as a comparative example. As shown in fig. 5, when positive ions 83 are implanted into the compound semiconductor 11, the positive ions 83 must pass through under the influence of coulomb force of the positive ions 86 and the negative ions 87, and thus the positive ions are difficult to smoothly enter the compound semiconductor 11. Further, when the electrons 82 as secondary electrons are emitted by the injection of the positive ions 83, there is a problem that the substrate is charged.
On the other hand, when the negative ions 81 (see fig. 6(a)) directed to the compound semiconductor 11 reach the compound semiconductor 11, the electrons 82 are easily desorbed by collision as shown in fig. 6 (b). Therefore, the negative ions 81 travel during ion bonding as neutral particles 81a from which the electrons 82 have been removed. The neutral particles 81a can smoothly enter the compound semiconductor 11 without being affected by the coulomb force of the cations 86 and the anions 87. Therefore, the energy of the negative ions 81 may be low energy, for example, 70eV or less. Further, when the negative ions 81 are injected, charging of the substrate does not occur. In addition, the negative ions 81 are injected into the compound semiconductor 11 in a state heated by the heating portion 30 (refer to fig. 1). Therefore, the desired element enters the back surface of the compound semiconductor 11 by concentration diffusion, and the excess element is removed by the heat treatment, so that the particles 81a can fill only the crystal defects.
Further, for example, in the case of irradiating negative ions using a negative ion source as a comparative example, the area which can irradiate negative ions is small, and in the case of , the negative ion irradiation device 1 including the plasma generation unit 14 can irradiate negative ions over a large area of the compound semiconductor 11 as in the present embodiment, and in the case of irradiating only negative ions of a single energy as a comparative example, the negative ions enter only a predetermined depth position of the compound semiconductor 11, and therefore, crystal defects cannot be filled over a range in the depth direction, and in the case of , the negative ion irradiation device 1 of the present embodiment can generate negative ions of an energy in a range , and therefore, crystal defects can be filled over a range in the depth direction.
As described above, the negative ion irradiation device 1 of the present embodiment can fill up crystal defects of the compound semiconductor 11, and thus can improve the quality of the compound semiconductor 11. Further, even if the grade of the compound semiconductor 11 is insufficient before the negative ion irradiation, the quality can be improved by the negative ion irradiation, and therefore the necessity of screening the grade of the single crystal substrate in advance can be reduced. As described above, the efficiency and quality of manufacturing the compound semiconductor can be improved.
The method for controlling the negative ion irradiation device 1 of the present embodiment includes: a gas supply step S10 of controlling the gas supply unit 40 to supply a gas into the vacuum chamber 10; the negative ion irradiation step (plasma generation step S20, voltage application step S30) is a step of controlling the plasma generation unit 14 to generate plasma P and electrons in the vacuum chamber 10, and stopping the generation of the plasma P to generate negative ions from the electrons and gas, and irradiating the compound semiconductor 11 with the negative ions.
According to the method of controlling the negative ion irradiation apparatus 1 of the present embodiment, the same effects and effects as those of the negative ion irradiation apparatus 1 can be obtained.
Although the embodiment of the present embodiment has been described above, the present invention is not limited to the above embodiment, and can be modified and applied to other embodiments without departing from the spirit of the invention described in the claims.
In the above-described embodiment, the negative ion irradiation device having a function as a film formation device of an ion plating type has been described, but the negative ion irradiation device may not have a function as a film formation device. Thus, the plasma P can be guided into, for example, an electrode or the like of the wall portion opposed to the plasma gun.
For example, although the plasma gun 7 is a pressure gradient type plasma gun in the above embodiment, the plasma gun 7 is not limited to a pressure gradient type plasma gun as long as it can generate plasma in the vacuum chamber 10.
In the above embodiment, only sets of the plasma guns 7 and the positions (hearth mechanism 2) for guiding the plasma P are provided in the vacuum chamber 10, but a plurality of sets may be provided, and the plasma P may be supplied from a plurality of the plasma guns 7 to positions.

Claims (2)

1, kinds of negative ion irradiation apparatuses for irradiating a compound semiconductor with negative ions, the negative ion irradiation apparatus comprising:
a chamber in which the generation of negative ions is performed;
a gas supply unit configured to supply a gas containing the same element as an ion forming the compound semiconductor;
a plasma generating unit that generates plasma and electrons in the chamber;
a disposing section that disposes the compound semiconductor; and
a control unit for controlling the negative ion irradiation device,
the control unit controls the gas supply unit to supply the gas into the chamber,
the control unit controls the plasma generation unit to generate the plasma and the electrons in the chamber, stops the generation of the plasma, generates the negative ions from the electrons and the gas, and irradiates the compound semiconductor with the negative ions.
2, A method for controlling an anion irradiation apparatus for irradiating a compound semiconductor with anions, the anion irradiation apparatus comprising:
a chamber in which the generation of negative ions is performed;
a gas supply unit configured to supply a gas containing the same element as an ion forming the compound semiconductor;
a plasma generating unit that generates plasma and electrons in the chamber;
a disposing section that disposes the compound semiconductor; and
a control unit for controlling the negative ion irradiation device,
the control method of the negative ion irradiation device comprises the following steps:
a gas supply step of controlling the gas supply unit by the control unit to supply the gas into the chamber; and
and a negative ion irradiation step of generating the plasma and the electrons in the chamber by controlling the plasma generation unit by the control unit, generating the negative ions from the electrons and the gas by stopping the generation of the plasma, and irradiating the compound semiconductor with the negative ions.
CN201910648876.XA 2018-07-18 2019-07-18 Negative ion irradiation device and method for controlling negative ion irradiation device Pending CN110735116A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018134880A JP7412074B2 (en) 2018-07-18 2018-07-18 Negative ion irradiation device and control method for negative ion irradiation device
JP2018-134880 2018-07-18

Publications (1)

Publication Number Publication Date
CN110735116A true CN110735116A (en) 2020-01-31

Family

ID=69169561

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910648876.XA Pending CN110735116A (en) 2018-07-18 2019-07-18 Negative ion irradiation device and method for controlling negative ion irradiation device

Country Status (3)

Country Link
JP (1) JP7412074B2 (en)
CN (1) CN110735116A (en)
TW (2) TWI778278B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114071852A (en) * 2020-07-29 2022-02-18 住友重机械工业株式会社 Plasma gun, film forming apparatus, and negative ion generating apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7404119B2 (en) * 2020-03-19 2023-12-25 住友重機械工業株式会社 Negative ion generator

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017014278A1 (en) * 2015-07-21 2017-01-26 住友重機械工業株式会社 Film-forming apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11354067A (en) * 1998-06-11 1999-12-24 Nissin Electric Co Ltd Oxygen negative ion beam implanting method and implanting apparatus thereof
JP2000311868A (en) * 1999-04-27 2000-11-07 Canon Inc Method and system for treating surface using negative ions and fabrication of semiconductor device
US7241993B2 (en) * 2000-06-27 2007-07-10 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
JP2002289584A (en) * 2001-03-26 2002-10-04 Ebara Corp Surface treatment method
JP2002329682A (en) * 2001-04-27 2002-11-15 Anelva Corp Cu THIN FILM MANUFACTURING METHOD
KR20150005533A (en) * 2012-04-11 2015-01-14 도쿄엘렉트론가부시키가이샤 Method for manufacturing semiconductor device, semiconductor device, and apparatus for producing semiconductor
JP6779487B2 (en) * 2016-12-28 2020-11-04 住友重機械工業株式会社 Film formation system and semiconductor film manufacturing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017014278A1 (en) * 2015-07-21 2017-01-26 住友重機械工業株式会社 Film-forming apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114071852A (en) * 2020-07-29 2022-02-18 住友重机械工业株式会社 Plasma gun, film forming apparatus, and negative ion generating apparatus

Also Published As

Publication number Publication date
TWI823563B (en) 2023-11-21
JP7412074B2 (en) 2024-01-12
JP2020013878A (en) 2020-01-23
TW202301428A (en) 2023-01-01
TW202013438A (en) 2020-04-01
TWI778278B (en) 2022-09-21
KR20200010092A (en) 2020-01-30

Similar Documents

Publication Publication Date Title
JP6584982B2 (en) Deposition equipment
CN110735116A (en) Negative ion irradiation device and method for controlling negative ion irradiation device
WO2017014278A1 (en) Film-forming apparatus
CN103515172B (en) The method of operation of ion beam irradiation apparatus and ion beam irradiation apparatus
KR101453263B1 (en) Ion implantation apparatus and operation method of ion implantation apparatus
KR102721697B1 (en) Negative ion irradiation apparatus and Method for controlling it
TWI756742B (en) Negative ion generator
TWI757771B (en) Negative ion irradiation device
US9105451B2 (en) Plasma processing method and plasma processing apparatus
JP7120540B2 (en) Ion irradiation apparatus, ion irradiation method, film formation apparatus, and film formation method
KR20150077730A (en) Plasma processing apparatus of oled substrate
JP2021048355A (en) Substrate processing apparatus
KR102478688B1 (en) Method for cleaning ion beam irradiation device
TW202103519A (en) Negative ion generating device without generating a large amount of electrons
KR20100121981A (en) Plasma doping method using frequency modulation
KR20220121803A (en) Anion generating device, and anion generating method
KR101096490B1 (en) Plasma doping method and device used to the same
JP5324144B2 (en) Plasma processing method and processing apparatus
KR101090767B1 (en) Plasma processing apparatus and plasma processing method
JP2022025333A (en) Plasma gun, film forming device, and negative ion generating device
CN112226734A (en) Negative ion generating device
JP2014143110A (en) Ion injector
JP2014138173A (en) Method of manufacturing semiconductor device, and substrate processing system
KR20100121992A (en) Apparatus for plasma doping
KR20100121988A (en) Plasma doping method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination