KR101118770B1 - Dry film photo resist - Google Patents

Dry film photo resist Download PDF

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KR101118770B1
KR101118770B1 KR1020090099910A KR20090099910A KR101118770B1 KR 101118770 B1 KR101118770 B1 KR 101118770B1 KR 1020090099910 A KR1020090099910 A KR 1020090099910A KR 20090099910 A KR20090099910 A KR 20090099910A KR 101118770 B1 KR101118770 B1 KR 101118770B1
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South Korea
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photosensitive resin
resin layer
dry film
copper foil
film photoresist
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KR1020090099910A
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Korean (ko)
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KR20110043004A (en
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김건주
허문석
강동헌
김민영
김선아
이정원
이정한
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삼성전기주식회사
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/092—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/0366—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement reinforced, e.g. by fibres, fabrics

Abstract

본 발명은 드라이필름 포토레지스트에 관한 것으로서, 지지 필름; 상기 지지 필름 상에 적층된 제1 감광성 수지층; 상기 제1 감광성 수지층 상에 적층되고 동면 밀착제를 함유하는 제2 감광성 수지층; 및 상기 제2 감광성 수지층 상에 적층된 커버 필름;을 포함하는 드라이필름 포토레지스트를 제공한다.The present invention relates to a dry film photoresist, comprising: a support film; A first photosensitive resin layer laminated on the support film; A second photosensitive resin layer laminated on the first photosensitive resin layer and containing a coplanar adhesive; It provides a dry film photoresist comprising; and a cover film laminated on the second photosensitive resin layer.

포토레지스트, 밀착 Photoresist, close contact

Description

드라이필름 포토레지스트{Dry film photo resist}Dry film photo resist

본 발명은 드라이필름 포토레지스트에 관한 것으로서, 보다 상세하게는, 감광성 수지층과 커버 필름 사이에 동면 밀착제를 함유하는 감광성 수지층을 더 구비한 드라이필름 포토레지스트에 관한 것이다.The present invention relates to a dry film photoresist, and more particularly, to a dry film photoresist further comprising a photosensitive resin layer containing a coplanar adhesive between the photosensitive resin layer and the cover film.

인쇄회로기판(Printed Circuit Board; PCB)의 제조분야에 있어서는, 회로 패턴을 지지 필름과, 지지 필름 상에 형성된 감광성 수지층 및 감광성 수지층 상에 형성된 커버 필름으로 이루어지는 드라이필름 포토레지스트를 이용한 포토리소그래피 기술에 의해 형성하는 것이 행해지고 있다. In the field of printed circuit board (PCB) manufacturing, photolithography using a dry film photoresist comprising a circuit pattern comprising a support film, a photosensitive resin layer formed on the support film and a cover film formed on the photosensitive resin layer Forming by technique is performed.

이와 같은 드라이필름 포토레지스트를 이용하여 회로를 형성하는 과정을 설명하면 다음과 같다.Referring to the process of forming a circuit using such a dry film photoresist as follows.

인쇄회로기판의 원판소재인 동박 적층판에 회로를 형성시키기 위해서는 일반적으로 동박 적층판의 동박 위에 드라이필름 포토레지스트를 라미네이션한다.In order to form a circuit on a copper foil laminate that is a raw material of a printed circuit board, a dry film photoresist is generally laminated on the copper foil of the copper foil laminate.

이때, 드라이필름 포토레지스트의 커버 필름을 벗겨내면서 감광성 수지층을 동박 표면 위에 라미네이션시킨다.At this time, the photosensitive resin layer is laminated on the copper foil surface while peeling off the cover film of the dry film photoresist.

그런 다음, 회로 패턴 형성영역에 광을 소정의 패턴상으로 조사해서 드라이필름 포토레지스트의 감광성 수지층을 경화시킨다.Then, light is irradiated onto the circuit pattern formation region in a predetermined pattern to cure the photosensitive resin layer of the dry film photoresist.

계속해서, 드라이필름 포토레지스트의 지지 필름을 떼어내고, 미경화 감광성 수지층 영역을 제거한다. 이 적층판을, 구리를 용해하는 에칭액에 침지하면, 노출된 금속층 부분이 에칭되어, 광을 조사한 패턴과 동일한 구리 회로 패턴을 얻을 수 있다. 그 후 경화된 감광성 수지층을 제거하고, 기판 표면에 구리의 회로 패턴을 형성할 수 있다.Subsequently, the support film of a dry film photoresist is peeled off and the uncured photosensitive resin layer area | region is removed. When this laminated sheet is immersed in the etching liquid which melt | dissolves copper, the exposed metal layer part is etched and the copper circuit pattern similar to the pattern which irradiated light can be obtained. Thereafter, the cured photosensitive resin layer is removed, and a circuit pattern of copper can be formed on the substrate surface.

그런데, 최근 인쇄회로기판의 고집적화의 요구가 높아지면서, 동박에 대한 밀착력이 우수한 드라이필름 포토레지스트의 개발이 요구되고 있다.However, as the demand for high integration of printed circuit boards increases recently, development of dry film photoresists excellent in adhesion to copper foil is required.

따라서, 본 발명은 상기 문제점을 해결하기 위하여 이루어진 것으로서, 본 발명의 목적은, 감광성 수지층과 커버 필름 사이에 동면 밀착제를 함유하는 감광성 수지층을 더 구비함으로써, 동박에 대한 밀착력을 향상시킬 수 있는 드라이필름 포토레지스트를 제공하는데 있다.Therefore, this invention was made | formed in order to solve the said problem, The objective of this invention can improve the adhesive force to copper foil by further providing the photosensitive resin layer containing a copper surface adhesive agent between a photosensitive resin layer and a cover film. To provide a dry film photoresist.

상기 목적을 달성하기 위한 본 발명의 실시예에 의한 드라이필름 포토레지스트는, 지지 필름; 상기 지지 필름 상에 적층된 제1 감광성 수지층; 상기 제1 감광성 수지층 상에 적층되고 동면 밀착제를 함유하는 제2 감광성 수지층; 및 상기 제2 감광성 수지층 상에 적층된 커버 필름;을 포함할 수 있다.Dry film photoresist according to an embodiment of the present invention for achieving the above object, a support film; A first photosensitive resin layer laminated on the support film; A second photosensitive resin layer laminated on the first photosensitive resin layer and containing a coplanar adhesive; And a cover film laminated on the second photosensitive resin layer.

여기서, 상기 동면 밀착제는 벤조트리아졸(benzotriazole), 또는 3-Phenylimidazo[1.5-a]pyridine을 포함할 수 있다.Here, the hibernating adhesive may include benzotriazole, or 3-Phenylimidazo [1.5-a] pyridine.

또한, 상기 제1 감광성 수지층 및 상기 제2 감광성 수지층은, 바인더 폴리머, 광중합성 단량체, 광개시제 및 첨가제를 포함할 수 있다.In addition, the first photosensitive resin layer and the second photosensitive resin layer may include a binder polymer, a photopolymerizable monomer, a photoinitiator, and an additive.

이상에서 설명한 바와 같이, 본 발명에 따른 드라이필름 포토레지스트에 의하면, 제1 감광성 수지층과 커버 필름 사이에 동면 밀착제를 함유하는 제2 감광성 수지층을 더 구비함으로써, 동박에 대한 밀착력을 향상시킬 수 있는 효과가 있다.As described above, according to the dry film photoresist according to the present invention, by further providing a second photosensitive resin layer containing a coplanar adhesive between the first photosensitive resin layer and the cover film, adhesion to the copper foil can be improved. It can be effective.

또한, 본 발명은 드라이필름 포토레지스트의 밀착력을 향상시킴으로써, 인쇄회로기판에 미세 회로 패턴의 구현을 가능하게 할 수 있다.In addition, the present invention can improve the adhesion of the dry film photoresist, it is possible to implement the fine circuit pattern on the printed circuit board.

본 발명에 따른 드라이필름 포토레지스트의 상기 목적에 대한 기술적 구성을 비롯한 작용효과에 관한 사항은 본 발명의 바람직한 실시예가 도시된 도면을 참조한 아래의 상세한 설명에 의해서 명확하게 이해될 것이다.Matters relating to the operational effects including the technical configuration of the dry film photoresist according to the present invention will be clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.

이하, 도 1을 참조하여 본 발명의 실시예에 따른 드라이필름 포토레지스트에 대하여 상세히 설명한다.Hereinafter, a dry film photoresist according to an embodiment of the present invention will be described in detail with reference to FIG. 1.

도 1은 본 발명의 실시예에 따른 드라이필름 포토레지스트를 나타낸 단면도이다.1 is a cross-sectional view showing a dry film photoresist according to an embodiment of the present invention.

도 1에 도시된 바와 같이, 본 발명의 실시예에 따른 드라이필름 포토레지스트는, 지지 필름(10)과, 상기 지지 필름(10) 상에 적층된 제1 감광성 수지층(20)와, 상기 제1 감광성 수지층(20) 상에 적층된 제2 감광성 수지층(30), 및 상기 제2 감광성 수지층(30) 상에 적층된 커버 필름(40)을 포함한다.As shown in FIG. 1, a dry film photoresist according to an exemplary embodiment of the present invention may include a support film 10, a first photosensitive resin layer 20 stacked on the support film 10, and the agent. 2nd photosensitive resin layer 30 laminated | stacked on the 1st photosensitive resin layer 20, and the cover film 40 laminated | stacked on the said 2nd photosensitive resin layer 30 is included.

상기 지지 필름(10)은, 투과율과 정전기 등에 있어 우수한 물성을 갖는 고분자 수지, 예를 들면 폴리에스테르(polyester) 재질 등으로 이루어질 수 있으며, 상기 제1 감광성 수지층(20)을 보호한다.The support film 10 may be made of a polymer resin having excellent physical properties such as transmittance and static electricity, for example, a polyester material, and protects the first photosensitive resin layer 20.

그리고, 상기 커버 필름(40)은 통상적으로 폴리에틸렌(polyethylene) 재질 등으로 이루어질 수 있으며, 상기 제2 감광성 수지층(30)을 보호하며 동박(도 2의 도면부호 "100" 참조)에 라미네이션 시 제거되는 부분이다.In addition, the cover film 40 may be generally made of polyethylene, etc., and protects the second photosensitive resin layer 30 and is removed when laminating the copper foil (see reference numeral “100” in FIG. 2). It is a part.

상기 제1 감광성 수지층(20)은 통상적으로 바인더 폴리머, 광중합성 단량체, 광개시제 및 첨가제를 포함하는 감광성 수지 조성물을 용매에 녹여 지지 필름(10) 상에 코팅 및 건조시켜 형성된 것일 수 있다.The first photosensitive resin layer 20 may be formed by dissolving a photosensitive resin composition including a binder polymer, a photopolymerizable monomer, a photoinitiator, and an additive in a solvent and coating and drying the support film 10.

상술한 바와 같은 본 발명의 실시예에 따른 드라이필름 포토레지스트 적층구조에 있어서, 상기 지지 필름(10), 제1 감광성 수지층(20) 및 커버 필름(40) 재질은 통상의 드라이필름 포토레지스트에 따르는 바, 특별히 한정되는 것은 아니다.In the dry film photoresist stacking structure according to the embodiment of the present invention as described above, the support film 10, the first photosensitive resin layer 20 and the cover film 40 is made of a conventional dry film photoresist It does not specifically limit as follows.

특히, 본 발명의 실시예에 따른 드라이필름 포토레지스트는, 상기 제1 감광성 수지층(20)과 상기 커버 필름(40) 사이에 제2 감광성 수지층(30)이 추가로 구비되어 있다.In particular, in the dry film photoresist according to the embodiment of the present invention, a second photosensitive resin layer 30 is further provided between the first photosensitive resin layer 20 and the cover film 40.

여기서, 상기 제2 감광성 수지층(30)은 인쇄회로기판의 제조 공정 중 동박(100)과 라미네이션 공정시 상기 동박(100)에 직접 열 압착되는 부위로서, 동면 밀착제를 함유하고 있다.Here, the second photosensitive resin layer 30 is a portion directly bonded to the copper foil 100 during the lamination process with the copper foil 100 during the manufacturing process of the printed circuit board, and contains a copper face adhesive.

상기 동면 밀착제를 함유하는 제2 감광성 수지층(30)의 수지 조성물은 통상의 감광성 수지층을 구성하는 조성과 같되, 다만 동면 밀착제를 더 함유할 수 있다.The resin composition of the second photosensitive resin layer 30 containing the coplanar adhesive is the same as the composition constituting the usual photosensitive resin layer, but may further contain a coplanar adhesive.

상기 동면 밀착제를 함유하는 상기 제2 감광성 수지층(30)에서 사용되어지는 동면 밀착제는 벤조트리아졸(benzotriazole), 또는 3-Phenylimidazo[1.5- a]pyridine 등을 포함할 수 있다.The hibernate adhesive used in the second photosensitive resin layer 30 containing the hibernate adhesive may include benzotriazole, 3-Phenylimidazo [1.5-a] pyridine, or the like.

상기 동면 밀착제는 감광성 수지층과 동박 표면 간에 충분한 밀착력을 부여함으로써, 상기 드라이필름 포토레지스트가 인쇄회로기판의 제조 공정 중의 에칭 공정이나 도금 공정 등을 거치는 동안 동박으로부터 분리되거나, 동박과 분리되어 발생된 틈으로 에칭액 등이 침투하는 것을 방지해 줄 수 있다.The copper adhesive may provide sufficient adhesion between the photosensitive resin layer and the surface of the copper foil, whereby the dry film photoresist may be separated from the copper foil or generated from the copper foil during the etching process or the plating process in the manufacturing process of the printed circuit board. It is possible to prevent the etching liquid and the like from penetrating the gaps.

따라서, 본 발명의 실시예에 따른 드라이필름 포토레지스트는, 상기 동면 밀착제를 함유하는 제2 감광성 수지층(30)을 더 구비함으로써, 동박에 대한 고밀착력을 가질 수 있으며, 이로 인해 인쇄회로기판에 미세 회로 패턴의 구현을 가능하게 할 수 있는 효과가 있다.Accordingly, the dry film photoresist according to the embodiment of the present invention may further include a second photosensitive resin layer 30 containing the coplanar adhesive, and thus may have high adhesion to copper foil, thereby causing a printed circuit board. There is an effect that can enable the implementation of a fine circuit pattern.

상기 동면 밀찰제를 함유하는 상기 제2 감광성 수지층(30)의 여타의 조성, 즉 바인더 폴리머, 광중합성 단량체, 광개시제 및 첨가제 등에 관해서는 당업계의 통상의 지식을 가진 자라면 알 수 있는 정도인 바, 특별히 한정되는 것은 아니다.Other compositions of the second photosensitive resin layer 30 containing the hibernating smearing agent, that is, a binder polymer, a photopolymerizable monomer, a photoinitiator, and an additive, etc. can be known to those skilled in the art. Bar is not specifically limited.

상기 동면 밀착제를 함유하는 제2 감광성 수지층(30)은, 반응기에 용매를 투입한 후, 상기 용매가 투입된 반응기에 동면 밀착제, 바인더 폴리머, 광중합성 단량체, 광개시제 및 첨가제 등을 포함하는 감광성 수지 조성물을 투입하고 믹싱하여 코팅액을 준비한 다음, 이 코팅액을 제1 감광성 수지층(20) 상에 코팅 및 건조시키는 방법 등에 의해 형성된 것일 수 있다.After the solvent is added to the reactor, the second photosensitive resin layer 30 containing the coplanar adhesive is photosensitive including a coplanar adhesive, a binder polymer, a photopolymerizable monomer, a photoinitiator, an additive, and the like in a reactor into which the solvent is added. After the resin composition is added and mixed to prepare a coating solution, the coating solution may be formed by coating and drying the coating solution on the first photosensitive resin layer 20.

상기 제2 감광성 수지층(30) 상에 상기 커버 필름(40)을 적층하여 최종적인 드라이필름 포토레지스트를 얻을 수 있다.The cover film 40 may be laminated on the second photosensitive resin layer 30 to obtain a final dry film photoresist.

상술한 바와 같은 본 발명의 실시예에 따른 드라이필름 포토레지스트를 이용 하여 회로 패턴을 형성하는 방법을 도 2 내지 도 3을 참조하여 설명하면 다음과 같다.A method of forming a circuit pattern using a dry film photoresist according to an embodiment of the present invention as described above will be described with reference to FIGS. 2 to 3.

도 2 내지 3은 본 발명의 실시예에 따른 드라이필름 포토레지스트를 이용하여 동박 상에 감광성 수지 패턴을 형성하는 방법을 나타낸 단면도이다.2 to 3 are cross-sectional views showing a method of forming a photosensitive resin pattern on a copper foil by using a dry film photoresist according to an embodiment of the present invention.

먼저,도 2를 참조하면, 동박 적층판의 동박(100) 상에, 지지 필름(10), 제1 감광성 수지층(20), 동면 밀착제를 함유하는 제2 감광성 수지층(30), 및 커버 필름(40)이 순차로 적층된 구조를 갖는 드라이필름 포토레지스트를 적층한다.First, referring to FIG. 2, on the copper foil 100 of the copper foil laminate, the support film 10, the first photosensitive resin layer 20, the second photosensitive resin layer 30 containing the coplanar adhesive, and the cover The dry film photoresist having a structure in which the film 40 is sequentially laminated is laminated.

이때, 상기 드라이필름 포토레지스트의 커버 필름(40)을 벗겨내면서 상기 제2 감광성 수지층(30)을 동박(100) 표면에 적층시킨다.At this time, the second photosensitive resin layer 30 is laminated on the surface of the copper foil 100 while peeling off the cover film 40 of the dry film photoresist.

그런 다음, 상기 드라이필름 포토레지스트의 지지 필름(10) 상에 회로 패턴이 형성될 영역과 대응하는 부분에 광이 통과할 수 있는 포토 마스크(110)를 배치한 후, 상기 포토 마스크(110)를 이용하여 드라이필름 포토레지스트에 대해 노광 공정을 수행한다.Then, the photo mask 110 through which light can pass is disposed on a portion corresponding to the region where the circuit pattern is to be formed on the support film 10 of the dry film photoresist, and then the photo mask 110 is disposed. To perform the exposure process on the dry film photoresist.

상기 노광 공정에서, 포토 마스크(110)를 통해 자외선을 조사하면, 자외선이 조사된 드라이필름 포토레지스트 부분에 함유된 광개시제에 의해 중합이 개시된다. 중합 초기에는 제1 및 제2 감광성 수지층(20,30) 내의 산소가 소모되고, 활성화된 단량체가 중합되어 가교반응이 일어난 후 많은 양의 단량체가 소모되면서 중합반응이 진행된다.In the exposure process, when ultraviolet rays are irradiated through the photo mask 110, polymerization is initiated by a photoinitiator contained in the dry film photoresist portion irradiated with ultraviolet rays. In the initial stage of the polymerization, oxygen in the first and second photosensitive resin layers 20 and 30 is consumed, and the activated monomer is polymerized to cause a crosslinking reaction, and then a large amount of monomer is consumed to proceed with the polymerization reaction.

이에 따라, 제1 및 제2 감광성 수지층(20,30)의 노광된 부분은 경화되고, 미노광된 부분은 가교반응이 진행되지 않은 상태로 존재하게 된다.Accordingly, the exposed portions of the first and second photosensitive resin layers 20 and 30 are cured, and the unexposed portions are present without the crosslinking reaction.

그 다음에, 도 3을 참조하면, 상기 제1 감광성 수지층(20)으로부터 상기 지지 필름(10)을 박리한 후, 현상액을 이용하여 미노광된 제1 및 제2 감광성 수지층(20,30) 부분을 용해시켜 제거하는 현상 공정을 수행한다.Next, referring to FIG. 3, after peeling the support film 10 from the first photosensitive resin layer 20, unexposed first and second photosensitive resin layers 20 and 30 using a developer. The development process of dissolving and removing a part is performed.

상기 현상 공정이 완료됨에 따라, 회로 패턴이 형성될 영역과 대응하는 동박(100) 상에는, 경화된 제1 및 제2 감광성 수지층(20a,30a)으로 이루어진 감광성 수지 패턴(50)이 형성된다.As the developing process is completed, on the copper foil 100 corresponding to the region where the circuit pattern is to be formed, a photosensitive resin pattern 50 including the cured first and second photosensitive resin layers 20a and 30a is formed.

이 후, 도면에 도시하지는 않았으나 상기 감광성 수지 패턴(50)에 의해 노출된 동박(100) 부분을 에칭액 등으로 제거하는 에칭 공정을 수행하여 회로 패턴을 형성한다.Subsequently, although not shown in the drawing, an etching process of removing a portion of the copper foil 100 exposed by the photosensitive resin pattern 50 with an etching solution or the like is performed to form a circuit pattern.

이상에서 설명한 본 발명의 바람직한 실시예들은 예시의 목적을 위해 개시된 것이며, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 있어 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러가지 치환, 변형 및 변경이 가능할 것이나, 이러한 치환, 변경 등은 이하의 특허청구범위에 속하는 것으로 보아야 할 것이다.Preferred embodiments of the present invention described above are disclosed for the purpose of illustration, and various substitutions, modifications, and changes within the scope without departing from the spirit of the present invention for those skilled in the art to which the present invention pertains. It will be possible, but such substitutions, changes and the like should be regarded as belonging to the following claims.

도 1은 본 발명의 실시예에 따른 드라이필름 포토레지스트를 나타낸 단면도.1 is a cross-sectional view showing a dry film photoresist according to an embodiment of the present invention.

도 2 내지 도 3은 본 발명의 실시예에 따른 드라이필름 포토레지스트를 이용하여 동박 상에 감광성 수지 패턴을 형성하는 방법을 나타낸 단면도.2 to 3 are cross-sectional views showing a method of forming a photosensitive resin pattern on a copper foil using a dry film photoresist according to an embodiment of the present invention.

< 도면의 주요 부분에 대한 부호의 설명 ><Description of Symbols for Main Parts of Drawings>

10: 지지 필름10: support film

20: 제1 감광성 수지층20: first photosensitive resin layer

30: 동면 밀착제를 함유하는 제2 감광성 수지층30: 2nd photosensitive resin layer containing a copper surface adhesive agent

40: 커버 필름40: cover film

50: 감광성 수지 패턴50: photosensitive resin pattern

100: 동박100: copper foil

110: 포토 마스크110: photo mask

Claims (3)

지지 필름;Support film; 상기 지지 필름 상에 적층된 제1 감광성 수지층;A first photosensitive resin layer laminated on the support film; 상기 제1 감광성 수지층 상에 적층되고 3-Phenylimidazo[1.5-a]pyridine를 함유하는 제2 감광성 수지층; 및A second photosensitive resin layer laminated on the first photosensitive resin layer and containing 3-Phenylimidazo [1.5-a] pyridine; And 상기 제2 감광성 수지층 상에 적층된 커버 필름;A cover film laminated on the second photosensitive resin layer; 을 포함하는 드라이필름 포토레지스트.Dry film photoresist comprising a. 삭제delete 삭제delete
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10333331A (en) 1997-05-29 1998-12-18 Nippon Synthetic Chem Ind Co Ltd:The Photosensitive resin composition and dry film resist using that
KR20040081251A (en) * 2003-03-14 2004-09-21 주식회사 코오롱 Photopolymerizable Resin Composition For Preventing Copper Oxidation
KR20050000465A (en) * 2003-06-24 2005-01-05 주식회사 코오롱 Photopolymerizable Resin Composition For Preventing Copper Oxidation and Improving Tenting Property
KR20050106647A (en) * 2004-05-06 2005-11-11 주식회사 코오롱 Dry-film photoresist

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10333331A (en) 1997-05-29 1998-12-18 Nippon Synthetic Chem Ind Co Ltd:The Photosensitive resin composition and dry film resist using that
KR20040081251A (en) * 2003-03-14 2004-09-21 주식회사 코오롱 Photopolymerizable Resin Composition For Preventing Copper Oxidation
KR20050000465A (en) * 2003-06-24 2005-01-05 주식회사 코오롱 Photopolymerizable Resin Composition For Preventing Copper Oxidation and Improving Tenting Property
KR20050106647A (en) * 2004-05-06 2005-11-11 주식회사 코오롱 Dry-film photoresist

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