KR101101948B1 - 확산박막 증착 방법 - Google Patents
확산박막 증착 방법 Download PDFInfo
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- KR101101948B1 KR101101948B1 KR1020110017146A KR20110017146A KR101101948B1 KR 101101948 B1 KR101101948 B1 KR 101101948B1 KR 1020110017146 A KR1020110017146 A KR 1020110017146A KR 20110017146 A KR20110017146 A KR 20110017146A KR 101101948 B1 KR101101948 B1 KR 101101948B1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
- F04D17/08—Centrifugal pumps
- F04D17/16—Centrifugal pumps for displacing without appreciable compression
- F04D17/168—Pumps specially adapted to produce a vacuum
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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Abstract
Description
도 2는 본 발명에 따른 확산박막 증착 방법 및 그에 따른 박막증착율의 변화를 설명하기 위한 예시도.
도 3은 본 발명에 따른 확산박막 증착 방법 및 그에 따라 증착된 박막을 설명하기 위한 제 1 예시도.
도 4는 본 발명에 따른 확산박막 증착 방법 및 그에 따라 증착된 박막을 설명하기 위한 제 2 예시도.
도 5는 본 발명에 따른 확산박막 증착 방법 및 그에 따라 증착된 박막을 설명하기 위한 제 3 예시도.
도 6은 본 발명에 따른 확산박막 증착 방법을 설명하기 위한 블록도.
도 7은 본 발명에 따른 확산박막 증착 장치를 설명하기 위한 개략 구성도.
도 8은 본 발명에 따른 확산 박막증착 장치의 일실시예를 설명하기 위한 구성도.
21c: 티타늄 증착율 22c, 23c, 24c: 박막
41: 전원공급부 42: 메모리
43: 제어부 44: 디스플레이부
45: 키입력부 46: 가스공급부
48: 진공펌프
50: 진공챔버(시스템) 52: 음극
53: 반응가스 유입구 54: 반응가스 유출구
55: 기판홀더 56: 기판
57a: HCD 건 57b: 허어스
Claims (1)
- 목적물의 표면에 물리증착법(PVD)을 이용하여 박막을 증착시키는 박막증착 방법에 있어서,
한 개 이상의 박막물질이 목적물로 유도 및 증착되도록 하는 바이어스 전압, 아크 및 스퍼터 전원의 전력값 중 어느 1개 이상의 공정변수의 값을 증가와 감소 또는 감소와 증가가 반복되도록 연속적으로 가변되게 인가하고 반응가스의 가스량을 반복적으로 감소시키거나 반복적으로 증가시킬 수 있도록 하기 위하여, 바이어스전압, 아크전류, 반응가스량의 최대값, 최소값 및 그 변화량을 각각 설정하는 환경설정단계와;
상기 바이어스전압, 아크전류, 반응가스량의 초기 시작값을 각각 설정하는 시작값설정단계와;
상기 바이어스전압, 아크전류, 반응가스량에 대한 전압슬로프, 전류슬로프, 반응가스 투입량에 대한 슬로프를 선택하는 슬로프선택단계 및
상기 과정에 의해 선택된 바이어스전압, 아크전류, 반응가스량을 인가하여 목적물의 표면에 박막을 형성시키는 박막증착단계를 포함하여 구성된 것을 특징으로 하는 확산 박막증착 방법.
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KR1020090128297A Division KR101054298B1 (ko) | 2009-12-21 | 2009-12-21 | 확산박막 증착 방법 |
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KR101101948B1 true KR101101948B1 (ko) | 2012-01-02 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07300665A (ja) * | 1994-05-02 | 1995-11-14 | Yuken Kogyo Kk | 金属基材のホウ素拡散浸透層・ホウ素膜形成方法 |
JP2917555B2 (ja) * | 1991-01-14 | 1999-07-12 | 三菱マテリアル株式会社 | 硬質層被覆超硬合金製切削工具およびその製造法 |
JP2002088465A (ja) * | 2000-09-11 | 2002-03-27 | Matsushita Electric Ind Co Ltd | 金属基材への硬質炭素膜の成膜方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2917555B2 (ja) * | 1991-01-14 | 1999-07-12 | 三菱マテリアル株式会社 | 硬質層被覆超硬合金製切削工具およびその製造法 |
JPH07300665A (ja) * | 1994-05-02 | 1995-11-14 | Yuken Kogyo Kk | 金属基材のホウ素拡散浸透層・ホウ素膜形成方法 |
JP2002088465A (ja) * | 2000-09-11 | 2002-03-27 | Matsushita Electric Ind Co Ltd | 金属基材への硬質炭素膜の成膜方法 |
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