KR101101493B1 - 투영 대물렌즈, 투영 노광 장치 및 마이크로리소그래피용반사형 레티클 - Google Patents

투영 대물렌즈, 투영 노광 장치 및 마이크로리소그래피용반사형 레티클 Download PDF

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KR101101493B1
KR101101493B1 KR1020067020201A KR20067020201A KR101101493B1 KR 101101493 B1 KR101101493 B1 KR 101101493B1 KR 1020067020201 A KR1020067020201 A KR 1020067020201A KR 20067020201 A KR20067020201 A KR 20067020201A KR 101101493 B1 KR101101493 B1 KR 101101493B1
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South Korea
Prior art keywords
projection objective
objective lens
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image
lens
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Korean (ko)
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KR20060130233A (ko
Inventor
오렐리안 도독
빌헬름 울리히
디터 바데르
알렉산더 에플레
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칼 짜이스 에스엠티 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020067020201A 2004-03-30 2005-03-18 투영 대물렌즈, 투영 노광 장치 및 마이크로리소그래피용반사형 레티클 Expired - Fee Related KR101101493B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US55738404P 2004-03-30 2004-03-30
US60/557,384 2004-03-30
PCT/EP2005/002898 WO2005096098A2 (en) 2004-03-30 2005-03-18 Projection objective, projection exposure apparatus and reflective reticle for microlithography

Publications (2)

Publication Number Publication Date
KR20060130233A KR20060130233A (ko) 2006-12-18
KR101101493B1 true KR101101493B1 (ko) 2012-01-03

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KR1020067020201A Expired - Fee Related KR101101493B1 (ko) 2004-03-30 2005-03-18 투영 대물렌즈, 투영 노광 장치 및 마이크로리소그래피용반사형 레티클

Country Status (6)

Country Link
US (1) US8064040B2 (https=)
EP (1) EP1730596B1 (https=)
JP (1) JP5106099B2 (https=)
KR (1) KR101101493B1 (https=)
DE (1) DE602005026375D1 (https=)
WO (1) WO2005096098A2 (https=)

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US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR20160085375A (ko) 2004-05-17 2016-07-15 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7283209B2 (en) 2004-07-09 2007-10-16 Carl Zeiss Smt Ag Illumination system for microlithography
US7511890B2 (en) 2005-02-04 2009-03-31 Carl Zeiss Smt Ag Refractive optical imaging system, in particular projection objective for microlithography
JP4425239B2 (ja) * 2005-05-16 2010-03-03 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置およびデバイス製造方法
WO2007058188A1 (ja) * 2005-11-15 2007-05-24 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
KR101440762B1 (ko) 2007-02-06 2014-09-17 칼 짜이스 에스엠테 게엠베하 마이크로리소그래피 투영 노광 장치의 조명 시스템 내의 다수의 미러 어레이들을 감시하는 방법 및 장치
DE102007005875A1 (de) 2007-02-06 2008-08-14 Carl Zeiss Smt Ag Vorrichtung und Verfahren zur Bestimmung der Ausrichtung von Oberflächen von optischen Elementen
CN101669071B (zh) 2007-04-25 2012-03-21 卡尔蔡司Smt有限责任公司 微光刻曝光装置中照明掩模的照明系统
WO2009026947A1 (en) 2007-08-30 2009-03-05 Carl Zeiss Smt Ag Illumination system for illuminating a mask in a microlithographic projection exposure apparatus
EP2388649B1 (en) 2007-12-21 2013-06-19 Carl Zeiss SMT GmbH Illumination system for illuminating a mask in a microlithographic exposure apparatus
CN102279459B (zh) * 2010-06-09 2014-06-18 上海微电子装备有限公司 一种投影物镜
KR101727783B1 (ko) * 2010-06-15 2017-04-17 칼 짜이스 에스엠테 게엠베하 Euv 리소그래피를 위한 마스크, euv 리소그래피 시스템 그리고 마스크의 결상을 최적화하는 방법
TWI450019B (zh) * 2011-10-06 2014-08-21 Acer Inc 照明系統與投影裝置
KR101924309B1 (ko) * 2011-12-20 2018-11-30 가부시키가이샤 니콘 기판 처리 장치, 디바이스 제조 시스템 및 디바이스 제조 방법
JP6069941B2 (ja) * 2012-08-08 2017-02-01 株式会社ニコン 投影露光装置及びデバイス製造方法
CN105445824B (zh) * 2014-08-20 2017-02-22 清华大学 Led光通信接收透镜及led光通信系统
US9791786B1 (en) * 2016-04-08 2017-10-17 Applied Materials, Inc. Method to reduce line waviness
KR102650388B1 (ko) * 2016-11-23 2024-03-25 삼성전자주식회사 검사 장치 및 그를 이용한 반도체 소자의 제조 방법
FI128407B (en) * 2017-06-02 2020-04-30 Dispelix Oy Projection objective and waveguide display device

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Also Published As

Publication number Publication date
WO2005096098A2 (en) 2005-10-13
JP2007531024A (ja) 2007-11-01
EP1730596B1 (en) 2011-02-16
KR20060130233A (ko) 2006-12-18
DE602005026375D1 (de) 2011-03-31
US8064040B2 (en) 2011-11-22
WO2005096098A3 (en) 2006-07-06
JP5106099B2 (ja) 2012-12-26
EP1730596A2 (en) 2006-12-13
US20080198353A1 (en) 2008-08-21

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