KR101079895B1 - Perforated substratemethod for manufacturing same and full wafer contact board - Google Patents

Abstract

By vibrating the drill jig in which the plurality of drills 3 are formed, a plurality of holes 5 are formed on the glass substrate 1 to obtain a hole forming substrate, and a conductive member is embedded in each hole of the hole forming substrate. Next, the hole-forming substrate is heat-treated at or above the softening temperature of the glass substrate and below the temperature at which the substrate shape can be maintained to fix the conductive member in each hole. After the heat treatment, the substrate may be thermally contracted by cooling. After the conductive member is fixed to the hole-forming substrate, the surface is polished, the conductive member is exposed on both surfaces of the front and back surfaces, and a wiring layer is formed on both surfaces, thereby obtaining a wiring board.

Description

Hole Forming Substrate, Method of Manufacturing the Same and Wafer Batch Contact Board {PERFORATED SUBSTRATE, METHOD FOR MANUFACTURING SAME AND FULL WAFER CONTACT BOARD}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hole forming substrate in which a conductive member is embedded in a hole formed in the substrate, a method for manufacturing the same, and the like, in particular, a through hole forming substrate having a through hole penetrating the substrate, The manufacturing method of the wafer collective (full wafer) contact board comprised using the used double-sided wiring board and the double-sided wiring board.

In general, this type of through-hole forming substrate is used for inspection devices in semiconductors and the like. Here, taking the semiconductor inspection step as an example, the semiconductor inspection step is performed in a plurality of steps. Usually, the wafer manufactured in the wafer manufacturing process (pre-process) is cut (diced) after probe card inspection, and then packaged, and burn-in inspection and final inspection are performed.

In addition, a method of performing various inspections in a wafer state has recently been proposed. In this case, the wafer manufactured in the wafer manufacturing process (pre-process) is subjected to probe card inspection, wafer level burn-in (WLBI) inspection, and final inspection, and the wafer is cut after the final inspection.

Among the above-described tests, the probe card test is generally a DC / AC test using one chip or a multi-contact probe card (up to 64 chips). In this probe card, as shown in Figs. 6A and 6B, openings 62 are formed in the center of the multilayer wiring board 61 made of glass epoxy resin, and the periphery of the openings 62 is shown. A probe 63 is provided toward the center of the opening 62, and the probe 63 is brought into contact with the electrode terminal 42 on one chip 41 of the wafer 40 for inspection. There is a type of probe card.

In addition, as shown in Fig. 7, a bumped membrane 70 having bumps 72 (convex contacts) formed on one surface of a membrane 71 made of polyimide or the like is used as a contact part. Membrane probe cards have also been proposed. In FIG. 7, the bump 72 is energized with the wiring 74 through the through hole 73 formed in the membrane 71, and the bump 72 forming portion is formed of an elastic material 75 and a pivot mechanism ( 76) is pressed through the leaf spring 77 and contacted.

Burn-in inspection generally refers to a high temperature acceleration test performed on a chip basis, and in many cases, electrical tests are performed. The case where the burn-in inspection is carried out collectively is called wafer level burn-in (WLBI). In the case where burn-in inspection is carried out collectively, the wafer batch contact board (burn-in board) needs to be put to practical use.

Final inspection is the final electrical test, which performs a functional test based on the actual operating frequency of the device in a simple on / off test. Specifically, one to a plurality of bare chips and packaged articles are measured by directly using an handler through an interposer to the tester head. In a wafer state, measurements may be made using high-frequency probe cards (up to 64 chips).

According to the probe card inspection process described above, multi-measurement from one chip to 64 chips is possible at present, but if collective contact of the entire wafer surface is possible, a drastic reduction of inspection time and a reduction in inspection cost can be achieved. It becomes possible.

Similarly, if the wafer batch burn-in board for high frequency can be put into practical use, the inspection time can be shortened and the inspection cost can be drastically reduced.

In order to realize a wafer batch contact board for high frequency applications, application of a technology related to a contact board mainly developed for wafer batch burn-in inspection can be considered. However, in such a technique, in order to realize contact with the whole chip on a wafer, a glass substrate is used as a core substrate of a multilayer wiring board. Since the core substrate using the said glass substrate is one side wiring in which the wiring layer was formed only in one surface, there is a drawback that since the wiring layer formed in the surface becomes large and it requires microprocessing, cost becomes high. In addition, the length of the lead-out electrode (wiring) is also long due to the characteristics, and as a result, the resistance value increases, and there is also a disadvantage that impedance matching and wiring of the same length become difficult. In addition, there is also a problem such as an increase in cross-talk. Thus, it is difficult to manufacture a wafer batch contact board for a high frequency. Therefore, when the glass substrate is used as the core substrate, it is difficult to realize the wafer batch probe inspection board to be inspected at high frequency.

In addition, as described above, since the wiring layer is formed only on one side (wafer side) of the glass substrate surface, there is also a problem that elements such as resistors, capacitors and fuses cannot be mounted on the wiring layer. This is because, because the element has a thickness, the electrode such as a contact bump provided on the glass substrate becomes impossible to contact the pad on the wafer due to the influence of the element having the thickness. Therefore, it has been thought that the test board for probes using a glass substrate is not applicable to the use of a high frequency use or DC test.

Although it is possible to form an element on a glass substrate on the wiring layer as a thin film element, the cost is greatly increased, and at present, the technical difficulty is high, and although it is technically possible as a whole, technically, it still falls short of practical cost. The problem is that it is not realistic.

In view of the above problems, a wafer integrated contact board for high frequency applications that inspects wiring boards such as LSI inspection, MCM (multi-chip module), etc., has a through hole (the pitch is narrow, thin and high). It is considered that a board having a multilayered structure is required at the same time as forming a large number of through-holes having a high precision position on the entire surface of the substrate. However, a double-sided wiring board having a plurality of through holes formed in the glass substrate has not been proposed yet. This is because, when a glass substrate is used, there are many problems to be solved in terms of precision, thermal expansion, surface flatness, mechanical strength and workability.

Here, as a method of manufacturing a glass substrate from a double-sided wiring board, a method of processing one hole by drill into a glass substrate (for example, Japanese Utility Model Registration No. 3084452) can be considered. In the case of forming the hole, the cost of hundreds of thousands to millions of yen is impossible, so it is hardly realized in terms of cost.

On the other hand, molten glass is poured into a mold provided with a plurality of linear conductors, or a plurality of linear conductors are sandwiched by two sheets of glass to soften or fluidize the plate glass, and then solidify these to form a plurality of linear shapes. It is also possible to use a technique of forming a block body in which a conductor is embedded, cutting the block body, and obtaining a through-hole forming substrate (Japanese Patent Laid-Open No. 10 (1998) -190190). However, when such a method is applied to a thin wire, in practice, there is a problem that the wire is not bent and the position is not determined, making it difficult to secure the positional accuracy of the through hole.

In addition, a method of inserting the wire into the softened glass by pressing may also be considered, but in the case of a thin wire, there is a problem that the position is not determined due to bending or bending. Also, even if the wire is inserted by pressing, a considerable amount is not penetrated. Since the polishing must be exposed to expose the lower end of the wire, the polishing processing time and the like are unnecessarily large, resulting in a significant increase in cost.

Further, in such a method, when manufacturing a through-hole forming substrate in which a large number of through-holes with narrow pitches and thin positions are formed on the entire surface of the substrate, a manufacturing cost and installation cost of a forming mold provided with a plurality of linear conductors are provided. As the cost or wire installation or insertion cost increases, it is practically impossible to manufacture a through hole forming substrate in which a large number of through holes are formed on the entire surface of the substrate in a narrow pitch, thin and high positional accuracy. .

As described above, a through-hole forming substrate having a large number of narrow, thin, high-precision through-holes formed on the entire surface of the substrate is desired, but has not been realized in the present state, and satisfies both price and precision. There is no prospect of a recipe.

For this reason, in reality, it was not possible to manufacture the wafer collective contact board for contacting the entire wafer surface to satisfy the high frequency transmission characteristics of a certain degree or more.

An object of the present invention is to provide a hole forming substrate and a method for manufacturing a through hole forming substrate, which can realize a wafer batch contact board for high frequency applications simply and inexpensively.

It is an object of the present invention to provide a hole forming substrate capable of quickly forming a plurality of holes and accurately embedding a conductive member in the formed holes, and a method of manufacturing a through hole forming substrate.

Another object of the present invention is to provide a through-hole forming substrate which is constituted by a glass substrate having excellent flatness, and which can prevent disconnection of a wiring layer and the like.

This invention has the following structures.

(Configuration 1)

Embedding the conductive member in each hole in the hole-forming substrate in which the plurality of holes are formed; and after embedding the conductive member, the hole-forming substrate is heat-treated with the embedded conductive member, and the conductive is formed in each of the holes. It has a conductive member fixing process which fixes a member, The manufacturing method of the hole formation board characterized by the above-mentioned.

(Composition 2)

In the configuration 1, the conductive member fixing step is such that the conductive member is fused to each of the holes by heating the hole-forming substrate to a temperature equal to or higher than the softening point temperature of the hole-forming substrate and below the temperature at which the substrate shape can be maintained. Process for producing a hole-forming substrate comprising a step.

(Composition 3)

In the configuration 1, the step of fixing the conductive member is a step of heating the hole-forming substrate to a temperature equal to or higher than the softening point temperature of the hole-forming substrate and below the temperature at which the substrate shape can be maintained, and cooling after heating of the hole-forming substrate. And a step of thermally contracting the substrate, whereby the conductive member is fixed to each hole.

(Composition 4)

In the configuration 1, the hole forming substrate is made of a glass material, and in the conductive member fixing step, the hole forming substrate is heated so that the viscosity of the glass is 10 ⁴ to 10 ¹¹ poise. The manufacturing method of a hole formation board | substrate to perform.

(Composition 5)

The structure 1 WHEREIN: The drill board which planted the to-be-processed board | substrate and the some drill further, was prepared, and the drill jig which has the said some drill was made to contact the one side surface of the said to-be-processed board | substrate, The said drill And a step of forming a plurality of holes collectively to form the hole forming substrate by vibrating the jig.

(Composition 6)

The method for manufacturing a hole-forming substrate according to Configuration 5, wherein the drill jig is provided with ultrasonic waves to collectively form a plurality of holes.

(Composition 7)

In the configuration 1, the step of embedding the conductive member includes placing a linear conductor having a diameter thinner than the diameter of each hole of the hole forming substrate on the surface of the hole forming substrate on which the hole is formed, and then forming the hole. And embedding the conductor in each of the holes by applying vibration to the substrate.

(Composition 8)

In the structure 1, the process of embedding the said electroconductive member fills each hole of the said hole formation board | substrate by vibrating the said metal microparticles, using metal microparticles | fine-particles as the said electroconductive member, and embedding the said electroconductive member by this The manufacturing method of a hole formation board characterized by the above-mentioned.

(Composition 9)

Embedding the conductive member in each hole in the hole-forming substrate in which the plurality of holes are formed; and after embedding the conductive member, the hole-forming substrate is heat-treated with the embedded conductive member, and the conductive is formed in each of the holes. And a step of surface-polishing the hole-forming substrate to which the conductive member is fixed, and exposing the conductive member to both opposite surfaces to fix the member.

(Configuration 10)

Embedding the conductive member in each hole in the hole-forming substrate in which the plurality of holes are formed; and after embedding the conductive member, the hole-forming substrate is heat-treated with the embedded conductive member, and the conductive is formed in each of the holes. A conductive member fixing step of fixing the member, a surface polishing of the hole-forming substrate on which the conductive member is fixed, and exposing the conductive member on opposite both surfaces, and the exposed on at least one of the two surfaces. A method for manufacturing a wiring board, comprising the step of forming a wiring layer on the conductive member.

(Configuration 11)

A wafer collective contact board constructed using the wiring board according to the configuration 10.

(Configuration 12)

In a substrate having a structure in which a plurality of conductive members are embedded in a plurality of holes, the substrate is formed of a glass material, and the surface on which the conductive members are embedded has a surface roughness (roughness, roughness of 2 μm or less at a maximum height Rmax). A substrate, which is ground to have a).

In the invention described in Configuration 1, the hole-forming substrate is formed after embedding (inserting or filling) a conductive member in each hole in the hole-forming substrate on which a plurality of holes (holes) (not necessarily through holes) are formed. And a conductive member fixing step of fixing the conductive member in each hole by heat treatment with the embedded conductive member. Furthermore, in the invention described in Configuration 2, the step of fixing the conductive member includes a step of fusing the conductive member by heating the substrate to a temperature lower than or equal to a softening temperature of the hole-forming substrate and at which the substrate shape can be maintained. The electroconductive member can be fully fixed by fusion | melting. Moreover, in invention of the structure 3, it has the process of heat shrinking the said board | substrate by cooling after the heating of a hole formation board | substrate, and fixing the said electroconductive member, and can fix | immobilize the said electroconductive member firmly by heat contraction. In addition, since sealing is performed without any gap by fusion and heat shrinkage, resistance to corrosion can be improved.

As described above, the present invention has a step of fixing the conductive member by fusion and / or heat shrinkage, so that even if the number of through holes is fixed, it can be fixed at once, so that a cheap through hole forming substrate can be realized. Can be.

In addition, since a conductive member is inserted or filled in each hole in the hole forming substrate on which a plurality of holes (not necessarily through holes) are formed, a problem as disclosed in Japanese Patent Laid-Open No. 10 (1998) -190190. That is, when the linear conductor (wire, etc.) is thin, there is no problem that it may be bent or not fully inserted, and there is no problem of the positional accuracy of the through hole.

Examples of the conductive member include linear conductors (for example, wires), metal particles, and other conductive materials. In the case of wire, there is no fear of disconnection.

It is preferable to add a step of pressing the upper end of the linear conductor or the like at the time of fusion or thermal contraction. This is because the linear conductor is completely inserted into the through hole, thereby eliminating defects and reducing the amount of polishing, thereby reducing the cost.

In the invention described in Configuration 4, the hole-forming substrate is a glass material, and the glass material is heated so that the viscosity of the glass in the conductive member fixing step is 10 ⁴ to 10 ¹¹ poise. 10 ⁴ Poise means a temperature near the working temperature (molding temperature) of the glass. If the viscosity is lower than that, the glass may be softened excessively and the shape of the substrate may not be maintained. In addition, 10 ¹¹ poise means the viscosity of the yield point of glass, and when it is higher than that, molding of glass is difficult. Preferably, it is preferable to heat, the viscosity of the glass to be 10 ⁵ to 10 ⁸ poise.

In the invention described in Configuration 5, the hole-forming substrate is formed in a plurality of holes by vibrating the drill jig in a state in which a drill jig having a plurality of drills is brought into contact with one surface of the substrate to be processed. Compared to the case of forming holes sequentially using a drill having one blade or an ultrasonic drill having one blade, a plurality of holes are collectively formed, so that a hole forming substrate having a plurality of holes can be manufactured at a low price. It can be realized.

In addition, according to the configuration 6, the drill jig is subjected to an ultrasonic wave to collectively form a plurality of holes, whereby the pitch is narrow (for example, 3 mm or less) and thin (for example, the diameter of the through hole is 0.5 mmφ). It can be seen that the substrate having a plurality of holes formed on the entire surface of the substrate can be obtained. In other words, it can be seen that there are no breakages even when a plurality of holes are formed at a narrow pitch. This is considered to be because the machining is performed in a state where the drill blade is inserted into all the holes, so that the force can be applied uniformly. When drilling a new hole with a narrow pitch near a hole already formed, there is a risk of damage.

In the drill to which the ultrasonic wave is applied, it is preferable that a plurality of drill blades having a number and arrangement capable of stably freestanding the substrate to be processed are formed on one side of the substrate. This is because when the drill is not stably freestanding, it is difficult to keep the drill horizontal with respect to the substrate to be processed, and it is impossible to realize hole processing that is vertical and has high precision of hole diameter.

In addition, the drill to which the ultrasonic wave is applied, it is preferable to form a plurality of drill blades on one side of the substrate having a number and arrangement that the drill blades are not bent due to its own weight. This is because, when the drill blade is bent due to the weight of the drill itself, it is impossible to realize a hole processing that is vertical and has a high precision of the hole diameter.

Specifically, the number of drill blades is preferably 50 or more, and more preferably 100 or more. For example, for wafer package contact boards, the number of drill blades is preferably 500 or more, and more preferably 1000 or more, in view of the reduction in the number of hole machining and the drill manufacturing cost.

In addition, the hole formed by a drill may be a through hole which penetrated the to-be-processed board | substrate, or the hole which is not penetrated may be sufficient as it. In the case of not penetrating, since a linear conductor (for example, a wire or the like) or metal particles inserted or filled in the hole does not escape from the bottom opening, it is not necessary to provide a preventive measure against dropping out. When not penetrating, the non-penetrating portion is removed by polishing to expose linear conductors (for example, wires) and metal particles. In the case of penetrating, the diameter of the bottom opening is made smaller than that of the linear conductor or the metal particles, so that the linear conductor and the metal particles do not escape from the bottom opening, or the linear conductor or the metal particles are placed in a highly viscous paste. It is also conceivable to adopt a method of mixing them into a hole. Of course, one side may be blocked with a sheet | seat material, a high viscosity liquid coating agent, etc. after formation of a through-hole.

In addition, the surface roughness of the substrate to be processed before applying the ultrasonic wave to form the plurality of holes is set to 2 µm or less at the maximum height Rmax, thereby applying the ultrasonic wave to collectively form the plurality of holes. It is possible to effectively reduce the occurrence of cracks or breaks caused by cracks or scratches on the surface of the chip. Preferable surface roughness is 0.2 micrometer or less in arithmetic mean roughness Ra, More preferably, it is 0.1 micrometer or less in Ra. In addition, said arithmetic mean roughness Ra is measured according to the measuring method defined by JISB601-1994.

In addition, in order to make the surface of the substrate to be processed to the surface roughness before forming a plurality of holes by applying ultrasonic waves to the drill, grinding or polishing is performed to aggressively crack cracks or wounds on the surface of the substrate to be processed. At the same time, when forming a plurality of holes by applying ultrasonic waves, there is an advantage that it is possible to effectively reduce cracking or cracking. Moreover, as an ultrasonic wave, the ultrasonic wave which has a frequency of several Hz-several hundred Hz can be used.

As in the invention of Configurations 7 and 8, when a linear conductor (for example, a wire, etc.) (structure 7) or a metal particulate (structure 8) is inserted into each hole of the hole forming substrate by vibration, It can be seen that the shape conductor and the metal fine particles are automatically inserted. The vibration in this case is several milliseconds to several tens of microseconds. Therefore, it can be seen that the extreme cost reduction of the linear conductor or the metal fine particle insertion process is possible. In particular, when the number of through-holes into which linear conductors or metal fine particles are inserted is large, the effect of this configuration is very large. As the number of through holes increases, the method of inserting linear conductors or fine metal particles by aligning the holes per one hole increases the cost and is impossible to realize economically.

In view of the fact that the linear conductor is automatically and smoothly inserted into all the holes, the diameter of the linear conductor is preferably 90% or less of the hole diameter, more preferably 85% or less, and 80% or less. Even more preferred.

Similarly, the length of the linear conductor is preferably about the same as the depth of the hole, more preferably slightly longer than the depth of the hole, and even more preferably about 1.1 times the hole depth.

The material of the linear conductor is preferably a material in which the linear conductor is automatically and smoothly inserted into all the holes.

In addition, it is also possible to insert a linear conductor by vibrating by ultrasonic waves having a frequency of several Hz or more instead of vibration. From the standpoint of certainty, it has turned out that ultrasonic vibration is preferred.

In addition, by using the hole forming substrates obtained in the above structures 1 to 8 as in the invention described in Configuration 9, the hole forming substrate on which the conductive member is fixed is subjected to surface polishing, thereby exposing the conductive member to both facing surfaces. The through-hole forming board | substrate which energized the surface and back surface of the board | substrate with the electrically conductive member can be obtained.

In addition, in the configuration 9, after the fusion and / or fixation of the conductive member, by having a step of polishing one surface or both surfaces of the substrate, the metal surface of the conductive member can be exposed, so that the problem of oxide film or the like can be exposed. Can be avoided. In addition, the polishing eliminates the end of the linear conductor (part that has been blown out of the hole), so that complicated operations such as adjusting the length of the linear conductor are unnecessary. Further, by polishing, it is possible to provide flatness or improve flatness of the substrate. When the surface of the substrate and the end face of the conductive member are made to be the same surface by polishing, the level of the same plane is higher than that of the same surface by other methods, which is advantageous in terms of formation of the wiring layer and connectivity with the wiring layer.

The amount of polishing is preferably 1 mm or less, more preferably 0.5 mm or less, in consideration of the production cost per one surface. The substrate surface after grinding | polishing is 2 micrometers or less in the maximum height Rmax, Preferably it is 0.2 micrometers or less. As described above, a substrate having a flat surface, in particular, a glass substrate, has an advantage in that disconnection does not occur in the wiring layer even when a thin wiring layer is formed on the surface thereof.

In the invention described in Configuration 10, an inexpensive wiring board can be realized by forming a wiring layer on at least one surface of the conductive member exposed using the inexpensive through-hole forming substrate according to Configuration 9.

In configuration 10, the wiring layer can be formed in a single layer or multiple layers. In addition, a wiring layer can be formed in either surface or both surfaces. When the wiring layer is formed on both sides, it becomes a double-sided wiring board. The wiring layer includes a wiring or an electrode. In the formation of the wiring layer, a known wiring or multilayer wiring technique such as a photolithography method, a built-up method (in the case of multiple layers), a printing method, or the like is used.

The wiring board according to the configuration 10 is particularly suitable as a multilayer wiring board for wafer package contact boards when the number of through holes is large (for example, 200 or more).

In the wafer collective contact board of the invention described in Configuration 11, the through-hole forming substrate which is the base material of the double-sided wiring substrate needs to have low thermal expansion and high surface flatness. This is for contacting the entire surface of the wafer and for energizing / inspecting. It is preferable that the thermal expansion coefficient of the through-hole formation board | substrate which is a base material of a double-sided wiring board | substrate is 15x10 <^-6> / K or less. It is preferable that the surface flatness over the whole through-hole forming substrate which is the base material of a double-sided wiring board | substrate is 40 micrometers or less.

In the wafer package contact board of the present invention, it is necessary to use a through hole forming substrate in which a large number of narrow through holes are formed on the entire surface with high precision as a base material of the double-sided wiring board. This is to satisfy a certain level of transmission characteristics (high frequency transmission characteristics necessary for probe inspection and specific burn-in inspection).

In the present invention, a plurality of narrow and thin through-holes are formed in the entire surface of the substrate for the purpose of dealing with inspection electrodes such as semiconductor elements.

In the present invention, the pitch is narrow for the purpose of contacting the entire surface of the wafer to enable the fabrication of a wafer collective contact board for satisfying a certain level of transfer characteristics (high frequency transfer characteristics required for probe inspection or specific burn-in inspection). A plurality of thin through holes are formed in the entire surface of the substrate.

According to the present invention, the back surface of the double-sided wiring board (preferably a multi-layered double-sided wiring board) constituting the main portion of the wafer collective contact board is electrically connected through electrodes and through holes formed on the surface side corresponding to each chip on the surface side. The pad electrode is preferably formed near the top of the chip on the wafer and has a structure in which energization to the outside is almost vertical or connected in the shortest path. That is, it is preferable to form the back pad at the shortest position with respect to the electrodes on each chip.

In the present invention, it is preferable that the through-hole forming substrate is formed at a predetermined position in which the conductive through-holes are standardized on the entire surface of the substrate so that even if the type of the device under test changes. By doing in this way, it can manufacture at low cost. For example, the through hole may be formed in the entire surface of the substrate in a radial, concentric, or array shape.

As the wafer collective contact board, it is preferable that the substrate size is at least the wafer size. It is preferable that the thickness of a board | substrate is about 2-7 mm, in order to form a through hole correctly, ensuring mechanical durability. The number of through holes is determined in relation to the number of chip elements such as resistors and capacitors mounted on the substrate, and it is preferable that the number of chip elements x 2 (for example, 1000 or more). The pitch of the through holes is preferably 3 mm or less within the range in which mechanical durability between the through holes is secured, and the diameter of the through holes is preferably 0.1 to 0.5 mm φ.

The wafer collective contact board includes a wafer batch burn-in inspection board, a wafer batch probe inspection board, and a wafer batch final inspection board.

Moreover, the wafer collective contact board produced using the through-hole formation board | substrate which provided many through-holes in such a board | substrate whole surface could not be obtained conventionally. In other words, a through-hole forming substrate having a plurality of through-holes formed on the entire surface of the substrate is used.

In the substrate having a structure in which a plurality of conductive members are embedded in a plurality of holes, as in the invention described in Configuration 12, the substrate is formed of a glass material, and the surface on which the conductive member is embedded has a maximum height Rmax. By using the substrate polished to have a surface roughness of 2 μm or less, disconnection of the wiring layer formed on the surface of the substrate can be prevented. In particular, when the film thickness of the wiring layer is more than the film thickness having a function as the wiring layer and is thinner than 5 µm, the substrate of the constitution 12 is particularly effective.

1 (1)-(7) is a schematic diagram which shows the manufacturing method of the through-hole forming substrate which concerns on one Embodiment of this invention in process order.

(1)-(7) is a schematic diagram which showed the manufacturing method of the through-hole forming substrate which concerns on other embodiment of this invention in process order.

It is a graph which shows the viscosity curve of the low expansion glass used for embodiment of this invention.

4 is a schematic diagram illustrating a wafer collective contact board including a through hole forming substrate according to the present invention.

5 is a schematic diagram illustrating another wafer collective contact board including the through-hole forming substrate according to the present invention.

6A and 6B are a plan view and a sectional view for explaining an example of a probe card.

7 is a partial cross-sectional view for explaining another probe card.

[Method A of Producing Through Hole Forming Substrate]

Process (1): preparation of low expansion glass substrate

As shown in Fig. 1 (1), for example, a low expansion glass substrate 1 prepared by HOYA, such as low expansion glass substrate NA45 (size: 230 mm x 230 mm, thickness: 5 mm), is prepared. (The surface roughness of the low-expansion glass substrate 1 was 0.2 µm or less as Ra. The surface roughness was measured by a tactile surface roughness meter (trade name: Tencol P2, manufactured by Tencol Instruments).

In addition, the viscosity curve (temperature vs. viscosity) of the low-expansion glass substrate NA45 has the characteristics of FIG. 3. From this viscosity curve, it can be seen that the temperature range at which the viscosity of the glass becomes 10 ⁴ to 10 ¹¹ poise is 710 ° C to 1175 ° C.

Process (2): ultrasonic drilling

In a stainless steel substrate 2 having a flat size of 105 mm x 105 mm and having a thickness of 3 mm, screw holes having a pitch of 3 mm and a diameter of 0.5 mm are formed in an array of 3x30 = 900 pieces in total, Here, all the screws (length 8 mm) of M0.5 are inserted, and the drill jig provided with the drill 3 is formed. And the drill 3 which forms the drill jig 3 is formed with stainless steel, iron, tungsten, etc.

As shown in (2) of FIG. 1, the drill jig of the needle-shaped drill 3 is dissolved in the water in the state of placing the abrasive 4 on the glass substrate 1, and the glass substrate 1 and The process is performed by 38 Hz ultrasonic waves, supplying between the drills 3 (refer FIG. 1 (2)).

Process (3): By the ultrasonic processing, the hole 5 of the diameter substantially the same as the drill 3 is formed in depth 4.5mm. In practice, by machining the stainless steel plate four times by shifting the position of the stainless plate, 900 × 4 = 3600 holes 5 in total are accurately formed in an array shape. Then, the abrasive is washed away (see FIG. 1 (3)).

Step (4): Insertion of Linear Conductor (Wire)

As shown in Fig. 1 (4), a large number of tungsten wires 6 (0.4φ diameter x 5.5 mm in length) are placed on the glass substrate 1, and the same ultrasonic vibration as in Fig. 1 (2) is shown. Is attached, the wire 6 is automatically inserted into the hole.

In addition, when the tungsten wire is used, the wire 6 can be automatically and smoothly inserted into all the holes, and it is also excellent in terms of environmental response because it can be recovered and recycled.

Process (5): Fusion of wire by heating of glass substrate

After confirming that the wires 6 are inserted into all the holes, the useless wires 6 are removed, and the carbon is flattened on the upper part of the wires 6 erected in the holes or made of a material having a heat resistance of 1200 ° C or higher. A plate (7; size: 250 mm × 250 mm, thickness: 30 mm) is placed, and a glass substrate is placed on a flat table as it is, and 800 ° C. in a nitrogen atmosphere (temperature at which the viscosity of the glass becomes 10 ⁸ poise) It is heated by (see FIG. 1 (5)).

At this time, the glass is softened, and the wire 6 is inserted into the softened glass interior (bottom of the hole) due to the weight of the carbon plate 7 itself, and the processing hole of the glass into which the wire 6 is inserted. And the wire 6 are adhered and fixed.

At this time, the wire 6 is inserted in the glass remaining in the thickness of 0.5 mm in the bottom part of the hole formed in the glass substrate. The wire 6 does not necessarily protrude from the bottom of the hole. In the step (5), the pressing of the wire 6 may be omitted.

Process (6): fixation of wire by cooling and heat shrink of glass substrate

The diameter of the wire 6 is smaller than the diameter of the through hole. When the glass is softened and cooled, the through hole contracts, and the wire 6 is firmly fixed. Then, the glass substrate with a wire is cooled to room temperature (refer FIG. 1 (6)).

Step (7): double-sided polishing (step of exposing both ends of wire to the surface of glass substrate)

Both surfaces of the glass substrate to which the wire is attached are polished evenly so that the wire 6 is completely exposed to the front and back surfaces of the glass substrate.

At this time, it is necessary to polish so that the surface on which the wire 6 was exposed, and the surface and back surface of the glass substrate 1 correspond substantially. The surface roughness at this time was 0.2 micrometer or less in the maximum height Rmax.

Thereafter, the polished surface is well cleaned, thereby completing the through-hole forming substrate 10 in which the front and back surfaces of the glass substrate 1 are electrically connectable through the wire 6 inserted into the through-holes (Fig. See (7) of 1).

At this time, the plate thickness of the through-hole forming substrate 10 was about 4 mm.

[Method B for Manufacturing Through Hole Forming Substrate]

Process (1): preparation of low expansion glass substrate

As shown in Fig. 2 (1), for example, a low expansion glass substrate 1 made of HOYA, such as a low expansion glass substrate NA45 (size: 230 mm x 230 mm, thickness: 5 mm), is prepared. (The surface roughness of the low-expansion glass substrate 1 was 0.2 µm or less in Ra. The surface roughness was measured by a stylus type surface roughness meter (Tencol P2)).

Process (2): ultrasonic drilling

In a stainless steel substrate 2 having a flat size of 105 mm x 105 mm and having a thickness of 3 mm, screw holes having a pitch of 3 mm and a diameter of 0.5 mm are formed in an array of 3x30 = 900 pieces in total, The stainless steel drill 3 is formed by inserting all M0.5 screws (length 8 mm) into the screw holes. In this way, a drill jig as shown in Fig. 1 (2) is obtained.

The drill jig is placed on the glass substrate 1, while the abrasive 4 is dissolved in water, and 38 μs ultrasonic wave is applied while the abrasive 4 is supplied between the glass substrate 1 and the drill 3 to be processed ( See (2) of FIG. 2).

Process (3): By the ultrasonic processing, the hole 5 of the diameter substantially the same as the drill 3 is formed in depth 4.5mm. In practice, by machining the stainless steel plate 2 constituting the drill jig by shifting the position four times, 900 × 4 = 3600 holes 5 in total are accurately formed in an array shape. Then, the abrasive is washed away (see FIG. 2 (3)).

In addition, the process of said (1)-(3) is the same as that of the said manufacturing method A.

Step (4): Insertion of Metal Particulates

In this production method, metal fine particles 8 were used instead of wires. When the metal microparticles | fine-particles 8 give a vibration, the metal microparticles | fine-particles 8 are automatically inserted collectively in a hole (refer FIG. 2 (4)). Here, the metal microparticles | fine-particles 8 can use metal particle | grains, such as metal fine particles, such as solder, tungsten, copper, nickel, gold, and silver, the microparticles | fine-particles of the alloy, or nickel which gold-plated the surface. In any case, the metal fine particles 8 preferably have a particle diameter of 1/10 or less of the pore diameter. By mixing and using metal fine particles of different particle diameters, the packing density of the metal fine particles in the pores can be increased.

Instead of the metal fine particles 8, a method of filling the holes with the metal particles or the like dispersed in a dispersant (adhesive or resin) or the like may be used. In this case, the perforated drill hole can completely fill the hole with the metal particles dispersed in the dispersant.

Step (5): Fusion and Fixation of Metal Particles by Heating the Glass Substrate

After confirming that the metal fine particles 8 have been inserted into all the holes, the useless metal fine particles 8 are removed, and the carbon flattened on the upper part of the metal fine particles 8 into the holes or the heat resistance is 1200 ° C or higher. The plate 7 made of material is placed, and the glass substrate is placed on a flat table as it is, and heated to 1050 ° C. (the temperature at which the viscosity of the glass becomes 10 ⁵ poise) in a nitrogen atmosphere (FIG. 2 (5)). Reference). During heating, the metal fine particles 8 may be melted or may be fixed in the through holes even if they are not melted.

Since the particle diameter of the metal fine particles 8 is smaller than the diameter of the through hole, when the glass is softened, the metal fine particles 8 are sufficiently fixed by fusion, and the metal fine particles 8 are firmly fixed by heat shrinkage due to cooling after heating. do.

In the step (5), the pressurization of the metal fine particles may be omitted.

Process (6): Then, useless metal microparticles | fine-particles are removed and the glass substrate which filled the metal microparticles in the through hole is cooled to room temperature (refer FIG. 2 (6)).

Step 7: double side polishing

Both surfaces of the glass substrate filled with the metal fine particles 8 in the through-holes are polished flat, so that both ends of the metal fine particles 8 are completely exposed to the front and rear surfaces of the glass substrate 1.

At this time, the exposed surface of the metal fine particles 8 and the surface and the back surface of the glass substrate 1 need to be polished so as to substantially match. The surface and back surface of the glass substrate 1 after grinding | polishing were 0.2 micrometer or less in maximum height Rmax.

After polishing, the surface and the back surface are cleaned, whereby the through hole forming substrate 10 in which the front and back surfaces of the glass substrate 1 are electrically connected through the metal fine particles 8 inserted into the through holes can be obtained (FIG. 2). (7)).

At this time, the plate thickness of the through-hole forming substrate 10 was about 4 mm.

In the step (7), when a metal particle or the like is dispersed in the dispersant instead of the metal fine particles 8, conductive members such as the dispersant and the metal particles that have been blown out are removed by polishing, and the substrate is planarized. can do.

[Production of Double Sided Wiring Board]

Using the through-hole forming substrate (core substrate) A or B formed by the above method, wiring layers are formed on both surfaces thereof to produce a double-sided wiring board.

In addition, all the through holes (for example, 3600 pieces) formed on the entire surface of the through hole forming substrate may be used in part, without using all of them. Specifically, the upper part of the through-hole to be used is designed to pass through the wiring, and the upper part of the through-hole not to be used is designed to not pass the wiring.

It is preferable to design the wiring so that the wiring which needs to conduct electricity between the front and back surfaces is connected through the closest through hole. In addition, it is preferable to design the through-hole formation position (and number) and wiring so that the wiring length of a surface and a back surface may be made as short as possible.

The wiring layer is formed on both surfaces of the through hole forming substrate (core substrate) A or B by the sputtering method or the plating method. Specifically, a Cr / Cu / Ni wiring layer is formed by sequentially forming a Cr film of about 300 angstroms, a Cu film of about 2.5 μm, and a Ni film of about 0.3 μm by the sputtering method.

Next, according to the design of the wiring, a predetermined photolithography process (resist coating, exposure, development, etching) is performed to pattern the Cr / Cu / Ni wiring layer to form a double-sided wiring in which wiring patterns are formed on both sides of the through-hole forming substrate. The substrate was produced.

[Production of Multilayer Double-Sided Wiring Boards]

Next, the photosensitive polyimide precursor is apply | coated to the thickness of 10 micrometers using a spinner etc. on the 1st layer wiring pattern, a polyimide insulating film is formed, and a contact hole is formed in this polyimide insulating film. Specifically, the contact hole was formed by baking the coated photosensitive polyimide precursor at 80 ° C. for 30 minutes, exposing and developing using a predetermined mask.

Subsequently, a Cr / Cu / Ni wiring layer is formed on the polyimide insulating film on which the contact holes are formed as described above, and as described above, the Cr / Cu / Ni wiring layer is patterned to form a second wiring pattern, thereby forming a through hole. The multilayer double-sided wiring board which provided the wiring pattern of two layers on both surfaces of the formation board | substrate was obtained.

In addition, the film material of the wiring layer of a multilayer double-sided wiring board, the material of an insulating layer, the number of layers of a wiring layer, and an insulating layer, the film thickness, and the manufacturing method of a multilayer double-sided wiring board are not limited to what was mentioned above.

As the film material of the wiring layer, in addition to the above-described Cr / Cu / Ni, a multilayer structure of Cr / Cu / Ni / Au, a multilayer structure of Cu / Ni / Au, or the like may be used.

Moreover, as a material of an insulating layer, acrylic resin, an epoxy resin, etc. are mentioned besides the polyimide mentioned above. Among them, polyimide having a low expansion ratio and excellent resistance to heat and chemicals is preferable.

In the manufacturing method of the multilayer double-sided wiring board, the wiring layer and the wiring pattern were simultaneously formed on both surfaces in the above, but the wiring layer and the wiring pattern may be formed one by one while protecting the back surface.

[Production Example 1 of Wafer Batch Contact Board]

The wafer batch contact board of Production Example 1 is composed of a multilayer double-sided wiring board, an anisotropic conductive rubber sheet, and a bumped membrane (see FIG. 4).

As shown in Fig. 4, in the wafer collective contact board 20, the multilayer double-sided wiring board (size is 200 mmφ or more) is a core in which 3600 through holes are formed in an array shape on the entire surface of the substrate by the above method. Multilayer wiring layers are formed on both surfaces of the substrate A or B, and the wirings on both sides are electrically contacted by conductive members (wires, metal fine particles, etc.) inserted into the through holes.

On the back side wiring of the multilayer double-sided wiring board, wiring which draws electricity from the outside and pads for contacting the outside are formed. The pad portion is electrically connected to the tester, for example, with a pogo pin (an elastic pin with a built-in spring) or the like. Here, the structure is electrically connected to the tester not only at the periphery of the multilayer double-sided wiring board but also at the entire surface of the board including the central part.

The surface-side wiring of the multilayer double-sided wiring board includes wirings for flowing electric signals, elements (chip resistors, chip capacitors, etc.), and pad electrodes corresponding to pad electrodes formed on a wafer to be inspected. have. Then, a bumped membrane formed between the cushioning anisotropic conductive sheet as an intermediate layer and forming isolation pads and isolation bumps on the front surface and the back surface of the polyimide film or the like (a gap between the front and back isolation pads / isolated bumps). And the pad electrode on the wafer through the bumps of the wafer).

In the multilayer double-sided wiring board shown in Fig. 4, a plurality of through-holes are formed with the required number and pitches of the holes so that the through-holes are uniformly formed per chip in correspondence with the chips formed on the wafer. Although the pitch is wider than the pad corresponding to the pad formed on the wafer on the side and there are fewer pads, the through hole is formed on the entire back surface. The pad electrodes on the back side connected through the through holes corresponding to the respective chips on the front surface side are basically formed near the upper side of the wafer chip, and the energization to the outside is connected almost vertically or in the shortest path.

The core substrate has conductive through holes in the entire surface of the substrate (through holes in which conductive members are inserted into the through holes so that the front and back surfaces of the substrate can be electrically connected) so that the type of device under test can be changed. It is formed at a predetermined position and is standardized. By doing in this way, it can manufacture at low cost.

The through-holes are formed radially, concentrically, or in an array on the entire surface of the core substrate, and the entirety of the through-holes is embedded with wires, metal fine particles, conductive pastes, solder metals, or plated metals. When there is a gap between the hole of the substrate and the conductive material (for example, when metal fine particles are filled), the gap may be sealed with a non-conductive material such as resin.

Since the core substrate material is used at a high temperature, it is heat resistant and needs to be excellent at low temperature and high temperature, so that the coefficient of thermal expansion is 15 × 10 ⁻⁶ / K or less (the difference in thermal expansion coefficient with silicon is 13.82 × 10 ⁻⁶ / K or less), preferably 10 × 10 ⁻⁶ / K or less, and more preferably 5 × 10 ⁻⁶ / K or less. As such a material, for example, low-expansion glass such as ceramics such as Si, alumina, SiC, SiN, pyrex, quartz glass, aluminoborosilicate glass, Corning 7059, and HO40 manufactured by NAYA Can be mentioned. The core substrate material does not necessarily need to be an insulating material. However, when using a low-expansion metal (Ni alloy or the like) or a semiconductor such as Si or SiC as a core substrate material, it is necessary to insulate the inside of the through hole with an oxide, a resin or the like, and then embed the conductive material inside the through hole. There is. As described above, when the insulating substrate is not used, it is necessary to insulate the surface and then form the wiring. On the contrary, by connecting the core substrate to the core substrate itself using the conductivity of the core substrate, the multilayer wiring having excellent high frequency characteristics and low noise characteristics is provided. A substrate can be obtained. In this case, it goes without saying that the GRD of the wiring is energized to the internal conductive portion of the core substrate (the portion in which the conductive material is embedded without insulating the inside of the through hole).

In addition, when the core substrate material is photosensitive glass, the photosensitive glass substrate is exposed to a latent image to be formed in a portion forming a plurality of holes through a mask, and the exposed portion is crystallized to dissolve the crystallized region. In this case, a plurality of holes may be formed to form a core substrate. In this case, even narrower pitches and thinner holes (smaller diameters of through holes) can be collectively formed with high precision.

The anisotropic conductive sheet is formed so as to have conductivity in the vertical direction, and may adopt a structure in which wires are embedded in an elastic body such as rubber in the vertical direction, and a structure in which conductive particles such as metal are embedded in one surface or locally. You may employ | adopt.

In the membrane structure with bumps, for example, an isolated pad made of copper is formed on the back surface of the polyimide film, and a metal pad is formed on the surface side by a photolithography method, or a bump is formed by plating or the like. Although it may be sufficient, the back side isolation pad and the surface side pad or bump are energized with each other through the inside of a film. The structure of the said flexible film may be reversed in surface and back surface. The bumped membrane is flexible but not necessarily cushioned.

[Production Example 2 of Wafer Batch Contact Board]

The wafer batch contact board of Production Example 2 is composed of a multilayer double-sided wiring board and a microscopic contact probe having spring property (FIG. 5).

As shown in FIG. 5, the pad electrode on the surface side of the multilayer double-sided wiring board in the wafer collective contact board 20 includes a minute contact probe (needle) having spring property (materially or structurally). Through this configuration, the pad electrode on the wafer can be connected. Here, a wire rod such as a needle having a spring property is mechanically and electrically bonded to the surface side pad electrode of the multilayer double-sided wiring board by soldering, thermal fusion, and other methods. For example, a metal wire may be bonded by applying a wire bonding technique, or the fine needle formed by applying a micromachine technique may be bonded using a technique such as soldering.

The surface side pad electrode of the multilayer double-sided wiring board may be configured to directly connect with the pad electrode on the wafer.

The surface side pad electrode of a multilayer double-sided wiring board can also be made to be connected with the pad electrode on a wafer via the anisotropic member which can make repetitive contact, such as plasticity, such as an anisotropic elastic sheet.

Permanent contact is formed on the surface side pad electrode of the multilayer double-sided wiring board or the pad electrode itself using bumps (convex-shaped electrodes) made of a flexible material such as a conductive compressed material (for example, solder balls, Au, etc.). (One time limited contact) or the member which does not have much repetitive durability can be formed or separately formed (inserted), and it can also be set as the structure which is connected with electrodes, such as a device under test and an element.

Regarding other matters, it is the same as that of the manufacture example 1 of the said wafer collective contact board.

In addition, although the manufacture examples 1 and 2 of the said wafer collective contact board were made into a multilayer double-sided wiring board, it is needless to say that even if it is not a multilayer, it may be a double-sided wiring board formed in the single | mono layer on the surface and the back surface of a core board | substrate.

According to the method for manufacturing a through-hole forming substrate of the present invention, the conductive member is inserted or filled into a hole (hole) formed in the substrate, and then the substrate is lowered to a temperature at which the substrate shape can be maintained while being higher than the softening temperature of the substrate. By heating, the conductive member can be sufficiently fixed by fusion. In addition, the conductive member can be firmly fixed by heat shrinkage due to cooling after heating. In addition, since the sealing is performed without any gap by fusion and heat shrinkage, resistance to corrosion and the like can be improved. In addition, since the conductive member is fixed by fusion and / or heat shrinkage, even if the number of through holes is large, it can be fixed at one time. In addition, by inserting the wire with vibration, it is possible to reduce the extreme cost of the wire insertion process.

In addition, according to the method of manufacturing a through-hole forming substrate of the present invention, a plurality of drills are arranged on one surface of a substrate to be processed at equal intervals, and ultrasonic waves are applied to the drill to collectively arrange a plurality of holes in the substrate to be processed. As a result, the cost reduction of the through-hole forming substrate having a plurality of holes can be realized. Therefore, it is possible to realize an inexpensive double-sided wiring board by using the inexpensive through-hole forming substrate as described above.

According to the present invention, by combining the above inventions, a through-hole forming substrate having a high precision, low thermal expansion rate, and good surface flatness is formed by incorporating a plurality of through-holes having a narrow pitch, a thin position, and high positional accuracy on the entire surface of the substrate. Can be realized.

According to the manufacturing method of the wafer batch contact board of this invention, the wafer batch contact board for a high frequency use can be implement | achieved.

Claims (12)

A method for manufacturing a through-hole forming substrate, which is used in a multilayer double-sided wiring board for a wafer batch contact board, is provided corresponding to a chip formed on a wafer, and has a plurality of holes provided for each chip. Preparing a hole-forming substrate made of a glass material having a thermal expansion coefficient of 15 × 10 ⁻⁶ / K or less, Preparing a needle bar-shaped drill jig having a plurality of drills having a predetermined pitch and diameter; In the state where the drill jig is placed on the hole forming substrate, supplying ultrasonic waves to form a hole which does not penetrate from the hole forming substrate; Embedding a conductive member in each of the holes; After embedding the conductive member, the conductive member embedded in the hole-forming substrate is heat-treated together so that the viscosity of the glass becomes 10 ⁴ to 10 ¹¹ poise, and the fused member is fused to each of the holes, followed by cooling. A conductive member fixing step of thermally contracting the substrate to fix the conductive member to each hole; And a step of surface polishing the hole-forming substrate to which the conductive member is fixed and exposing the conductive member to opposing both surfaces. The said hole formation process of Claim 1 WHEREIN: The said hole formation is made by oscillating the said drill jig by an ultrasonic wave in the state which made the drill jig which has the said some drill contact to one surface of the said hole formation board | substrate. And a step of forming a plurality of holes which do not penetrate from the substrate at a time, thereby forming the hole forming substrate. The method of manufacturing a through-hole forming substrate according to claim 2, wherein in the step of forming the hole, a plurality of holes having a pitch of 3 mm or less and a diameter of 0.1 to 0.5 mm phi are formed in the hole forming substrate. . The process for embedding the conductive member according to claim 1, wherein the hole is formed by placing a linear conductor having a diameter thinner than the diameter of each hole of the hole forming substrate on the surface of the hole forming substrate on which the hole is formed. And inserting the conductor into each of the holes by applying vibration to the forming substrate. The process of embedding the conductive member according to claim 1, wherein each of the holes of the hole-forming substrate is filled by applying vibration to the metal fine particles using the metal fine particles as the conductive member. Method of manufacturing a through-hole forming substrate, characterized in that the buried. The method for manufacturing a through-hole forming substrate according to claim 1, wherein the surface polishing is 2 탆 or less at a maximum height Rmax of the substrate surface after polishing. The wiring layer is formed on both surfaces of the through-hole forming substrate according to any one of claims 1 to 6, and the wiring layer is patterned to form wiring patterns on both surfaces of the through-hole forming substrate. Method of manufacturing a substrate. The method for manufacturing a multilayer double-sided wiring board according to claim 7, wherein a polyimide insulating film having contact holes is formed on the wiring pattern, and another wiring pattern is formed on the polyimide insulating film. The multilayered double-sided wiring board of Claim 8, an anisotropic conductive sheet, and a membrane with a bump are comprised, The wafer collective contact board characterized by the above-mentioned. delete delete delete

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