KR101075677B1 - LGA substrate and method for manufacturing the same - Google Patents

LGA substrate and method for manufacturing the same Download PDF

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Publication number
KR101075677B1
KR101075677B1 KR1020090052005A KR20090052005A KR101075677B1 KR 101075677 B1 KR101075677 B1 KR 101075677B1 KR 1020090052005 A KR1020090052005 A KR 1020090052005A KR 20090052005 A KR20090052005 A KR 20090052005A KR 101075677 B1 KR101075677 B1 KR 101075677B1
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South Korea
Prior art keywords
plating layer
layer
electrode pad
forming
lga substrate
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KR1020090052005A
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Korean (ko)
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KR20100133225A (en
Inventor
방정윤
김치성
이동준
이호영
황현석
이영관
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삼성전기주식회사
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Geometry (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

The present invention relates to a LGA substrate and a method for manufacturing the same, each core layer having an upper electrode pad and a lower electrode pad formed on both sides; A solder resist layer formed on both surfaces of the core layer and having an opening exposing the upper electrode pad and the lower electrode pad; A lower plating layer formed on the lower electrode pads exposed to the openings; And an upper plating layer formed on the upper electrode pad exposed to the opening and having a thickness different from that of the lower plating layer. The present invention also provides a method for manufacturing the LGA substrate.

Substrate, Plating, Thickness

Description

LG substrate and method for manufacturing the same {LGA substrate and method for manufacturing the same}

The present invention relates to an LGA substrate and a method of manufacturing the same, and more particularly, to an LGA substrate having a thickness of a plating layer formed on an upper portion of a core layer is smaller than a thickness of a plating layer formed on a lower portion of a core layer and a method of manufacturing the same. .

The LGA (Land Grid Array) type substrate is a method in which electrodes on the LGA side, that is, the lower part of the substrate are connected through pins to be detachable from a mother board. Thus, an electroless gold plated layer is formed on the electrode pad of the LGA substrate by about 10 times the thickness of the conventional BGA method in order to prevent corrosion due to exposure to air and to minimize damage caused by physical contact with the pin.

1A to 1D are cross-sectional views sequentially illustrating a method of manufacturing an LGA substrate according to the prior art.

First, as shown in FIG. 1A, a core layer 110 having electrode pads 120 formed on both surfaces thereof is prepared. The core layer 110 may be made of an insulator, and the electrode pad 120 may be made of copper (Cu) or the like.

Next, the solder resist layer 130 is formed on both surfaces of the core layer 110 including the electrode pad 120.

Next, as shown in FIG. 1B, a portion of the solder resist layer 130 is removed to form an opening 131 exposing the electrode pad 120.

Next, as shown in FIG. 1C, the conductive adhesive layer 141 and the plating layer 142 are sequentially formed on the electrode pad 120 exposed to the opening 13.

The conductive adhesive layer 141 may be formed of a metal having excellent adhesion to the electrode pad 120 of Cu material, for example, nickel (Ni). The plating layer 142 may be formed of a metal capable of preventing oxidation of nickel (Ni), for example, gold (Au).

In this case, the plating layer 142 is formed in the upper and lower parts of the core layer 110 to the same thickness.

Thereafter, as illustrated in FIG. 1D, solder balls 150 connected to the upper surface of the plating layer 142 are formed.

However, according to the manufacturing method of the LGA substrate according to the prior art, as described above, the corrosion of the electrode pad 120 formed in the LGA side, that is, the lower portion of the core layer 110 due to the air exposure and physical contact with the fins In order to prevent damage by the plating layer 142 is formed much thicker than the conventional BGA method, wherein the plating layer 142 formed on the top of the core layer 110 is located on the lower portion of the core layer 110. It is not necessary to form the same thick as the plating layer 142 is formed.

That is, the plating layer 142 formed on the core layer 110 is not exposed to the air because the solder ball 150 is formed on the upper portion, the plating layer 142 formed on the lower portion of the core layer 110. It does not need to be formed thick to the same level as, and when formed thick as described above, there is a problem in that the bonding reliability with the solder ball 150 is lowered, wasting the material cost.

Accordingly, the present invention has been made to solve the above problems, an object of the present invention, the upper plating layer formed on the upper portion of the core layer to be formed to a thickness thinner than the lower plating layer formed on the lower portion of the core layer, The present invention provides an LGA substrate and a method of manufacturing the same, which can improve the bonding reliability of the solder balls formed on the substrate and reduce the cost of materials.

LGA substrate according to an embodiment of the present invention for achieving the above object, the core layer is formed on each of the upper electrode pad and lower electrode pad; A solder resist layer formed on both surfaces of the core layer and having an opening exposing the upper electrode pad and the lower electrode pad; A lower plating layer formed on the lower electrode pads exposed to the openings; And an upper plating layer formed on the upper electrode pad exposed to the opening and having a thickness different from that of the lower plating layer.

Here, the upper plating layer may be formed to a thickness thinner than the lower plating layer.

In addition, the lower plating layer and the upper plating layer may include gold (Au).

In addition, it may further include a solder ball formed on the upper plating layer.

In addition, a conductive adhesive layer interposed between the lower electrode pad and the lower plating layer and between the upper electrode pad and the upper plating layer may be further included.

In addition, the conductive adhesive layer may include nickel (Ni).

According to an aspect of the present invention, there is provided a method of manufacturing an LGA substrate, including: preparing a core layer having upper and lower electrode pads formed on upper and lower surfaces, respectively; Forming an upper solder resist layer covering the upper electrode pad and a lower solder resist layer covering the lower electrode pad on upper and lower surfaces of the core layer; Removing a portion of the lower solder resist layer to form a lower opening exposing the lower electrode pads; Forming a lower plating layer on the lower electrode pad exposed at the lower opening; Removing a portion of the upper solder resist layer to form an upper opening exposing the upper electrode pad; And forming an upper plating layer on the upper electrode pad exposed to the upper opening, the upper plating layer having a different thickness from the lower plating layer.

Here, in the forming of the upper plating layer, the upper plating layer may be formed to a thickness thinner than the lower plating layer.

In addition, the lower plating layer and the upper plating layer may be formed of gold (Au).

In addition, after the forming of the upper plating layer, the method may further include forming a solder ball on the upper plating layer.

In addition, before the forming of the lower plating layer, the method may further include forming a conductive adhesive layer on the lower electrode pad exposed to the lower opening.

In addition, before the forming of the upper plating layer, the method may further include forming a conductive adhesive layer on the upper electrode pad exposed to the upper opening.

As described above, according to the LGA substrate and the method for manufacturing the same according to the present invention, the upper plating layer formed on the upper portion of the core layer is formed to have a thickness thinner than the lower plating layer formed on the lower portion of the core layer, There is an effect that can improve the bonding reliability of the solder ball formed on the.

In addition, the present invention can reduce the thickness of the upper plating layer, thereby reducing the use of expensive gold (Au) to reduce the material cost, it is possible to improve the price competitiveness of the product.

Matters concerning the operational effects including the technical configuration of the LGA substrate according to the present invention and the manufacturing method for the above object will be clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.

First, an LGA substrate according to an exemplary embodiment of the present invention will be described in detail with reference to FIG. 2.

2 is a cross-sectional view showing an LGA substrate according to an embodiment of the present invention.

In the LGA substrate according to the embodiment of the present invention, as shown in FIG. 2, an upper electrode pad 220a is formed on an upper surface and a lower electrode pad 220b is formed on a lower surface thereof, and the The upper solder resist layer 230a and the lower solder resist layer 230b formed on the upper and lower surfaces of the core layer 210 may be included.

Here, the core layer 210 may be made of an insulator such as glass / epoxy resin in which an epoxy resin is infiltrated into the glass fiber.

The upper electrode pad 220a and the lower electrode pad 220b formed on the upper and lower surfaces of the core layer 210 may be made of copper (Cu) or the like.

An upper opening 231a exposing an upper surface of the upper electrode pad 220a is formed in the upper solder resist layer 230a.

In addition, a lower opening portion 231b exposing an upper surface of the lower electrode pad 220b is formed in the lower solder resist layer 230b.

An upper plating layer 242a is formed on the upper electrode pad 220a exposed to the upper opening 241a, and a lower plating layer 242b is formed on the lower electrode pad 220b exposed to the lower opening 241b. Formed.

The upper plating layer 242a and the lower plating layer 242b may be made of gold (Au) or the like to prevent corrosion of the upper and lower electrode pads 220a and 220b.

In addition, an upper conductive adhesive layer 241a may be further provided between the upper electrode pad 220a and the upper plating layer 242a.

The upper conductive adhesive layer 241a may serve to improve the adhesive strength between the upper plating layer 242a and the upper electrode pad 220a. Ni or the like may be used as a material for forming the upper conductive adhesive layer 241a.

In addition, a lower conductive adhesive layer 241b may be further provided between the lower electrode pad 220b and the lower plating layer 242b.

The lower conductive adhesive layers 241a and 241b may be made of Ni and the like as the upper conductive adhesive layers 241a and 241b.

Solder balls 250 are formed on the upper plating layer 242a and are connected to the upper plating layer 242a. In this case, although not shown in the drawing, an electronic component or the like may be mounted on the solder ball 250.

In particular, in the LGA substrate according to the embodiment of the present invention, the upper plating layer 242a is formed to have a different thickness from the lower plating layer 242b, wherein the upper plating layer 242a is the lower plating layer 242b. It is formed in a thinner thickness.

Here, the lower plating layer 242b is corroded by air exposure of the lower electrode pad 220b formed under the LGA side, that is, the core layer 110, and is damaged by physical contact with the fins. In order to prevent the back, it is preferable to form a thicker thickness, for example about 0.4 ㎛ compared to the conventional BGA method.

The upper plating layer 242a does not need to be formed to have the same thickness as the lower electrode pad 220b because the solder ball 250 is formed on the upper portion and is not exposed to air. The upper plating layer 242a may be formed to a thickness thinner than the lower plating layer 242b, for example, a thickness of about 0.07 μm.

Thus, according to the LGA substrate according to the embodiment of the present invention, by reducing the thickness of the upper plating layer 242a, it is possible to reduce the use of expensive gold (Au) to reduce the material cost.

In addition, according to the embodiment of the present invention, the thickness of the upper plating layer 242a is formed thinner than the conventional, so that the solder ball 250 is formed deeper in the upper solder resist layer 230a to the solder ball Bonding reliability of 250 can be improved.

Hereinafter, a method of manufacturing an LGA substrate according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 3A to 3G.

3A to 3G are cross-sectional views sequentially illustrating a method of manufacturing an LGA substrate according to an exemplary embodiment of the present invention.

First, as shown in FIG. 3A, a core layer 210 having an upper electrode pad 220a formed on an upper surface and a lower electrode pad 220b formed on a lower surface thereof is prepared.

Next, as illustrated in FIG. 3B, upper and lower surfaces of the core layer 210 may include an upper solder resist layer 230a covering the upper electrode pad 220a and a lower portion covering the lower electrode pad 220b. The solder resist layer 230b is formed.

Next, as shown in FIG. 3C, a portion of the lower solder resist layer 230b is removed to form a lower opening 231b exposing the lower electrode pad 220b.

The lower opening 231b may be formed by removing a portion of the lower solder resist layer 230b through an exposure and development process.

The lower opening 231b may be formed by removing a portion of the lower solder resist layer 230b by laser direct ablation (LDA) instead of the above-described exposure and development processes. The LDA method has an advantage of realizing an opening having a fine size using a laser.

Thereafter, as shown in FIG. 3D, the lower conductive adhesive layer 241b and the lower plating layer 242b are sequentially electroless plated on the lower electrode pad 220b exposed to the lower opening 231b.

The lower conductive adhesive layer 241b may be formed of nickel (Ni) or the like, and the lower plating layer 242b may be formed of gold (Au) or the like.

Here, the lower conductive adhesive layer 241b may be formed to a thickness of about 7 μm in order to improve the adhesive strength of the lower plating layer 242b, and the lower plating layer 242b may be about 0.4 in consideration of corrosion resistance and abrasion resistance. It can be formed in a thickness of 탆.

Next, as shown in FIG. 3E, a portion of the upper solder resist layer 230a is removed to form an upper opening 231a exposing the upper electrode pad 220a.

The upper upper opening 231a may be formed by exposing and developing a part of the upper solder resist layer 230a similarly to the lower opening 231b or by removing the upper soldering layer 230a by an LDA method.

3F, an upper conductive adhesive layer 241a and an upper plating layer 242a are sequentially electroless plated on the upper electrode pad 220a exposed to the upper opening 231a.

The upper conductive adhesive layer 241a may be formed to have a thickness of about 7 μm using Ni or the like as the lower conductive adhesive layer 241b.

The upper plating layer 242a is formed to have a thickness different from that of the lower plating layer 242b. In this case, the upper plating layer 242a may be formed to have a thickness thinner than that of the lower plating layer 242b. For example, the upper plating layer 242a may be formed to a thickness of about 0.07 μm using Au or the like.

Thereafter, as illustrated in FIG. 3G, solder balls 250 are formed on the upper plating layer 242a.

In the method of manufacturing the LGA substrate according to the embodiment of the present invention as described above, first, the lower electrode pad 220b formed under the core layer 210 is exposed to expose the lower plating layer (on the lower electrode pad 220b). After forming 242b, the upper electrode pad 220a formed on the core layer 210 is exposed to expose an upper plating layer having a thickness thinner than that of the lower plating layer 242b on the upper electrode pad 220a. 242a).

Therefore, according to the exemplary embodiment of the present invention, the thicknesses of the plating layers 242a and 242b formed on the upper and lower portions of the core layer 210 may be different from each other. In this case, the upper plating layer 242a may be formed on the lower plating layer 242b. By forming a thickness thinner than the above), the amount of Au, which is the upper and lower plating layers 242a and 242b, may be reduced, thereby reducing the material cost and improving the price competitiveness of the product.

In addition, by forming a thickness of the upper plating layer 242a thinner than before, the solder ball 250 is formed deeper in the upper solder resist layer 230a to improve the bonding reliability of the solder ball 250 You can.

Preferred embodiments of the present invention described above are disclosed for the purpose of illustration, and various substitutions, modifications, and changes within the scope without departing from the spirit of the present invention for those skilled in the art to which the present invention pertains. It will be possible, but such substitutions, changes and the like should be regarded as belonging to the following claims.

1A to 1D are cross-sectional views sequentially illustrating a method of manufacturing a LGA substrate according to the prior art.

2 is a cross-sectional view showing an LGA substrate according to an embodiment of the present invention.

3A to 3G are cross-sectional views sequentially illustrating a method of manufacturing an LGA substrate according to an exemplary embodiment of the present invention.

<Description of Symbols for Main Parts of Drawings>

210: core layer 220a: upper electrode pad

220b: lower electrode pad 230a: upper solder resist layer

230b: lower solder resist layer 231a: upper opening

231b: lower opening 241a: upper conductive adhesive layer

241b: lower conductive adhesive layer 242a: upper plating layer

242b: lower plating layer 250: solder ball

Claims (12)

A core layer on each of which upper and lower electrode pads are formed; A solder resist layer formed on both surfaces of the core layer and having an opening exposing the upper electrode pad and the lower electrode pad; A lower plating layer formed on the lower electrode pads exposed to the openings; And An upper plating layer formed on the upper electrode pad exposed to the opening and having a thickness thinner than the lower plating layer; LGA substrate comprising a. delete The method of claim 1, The lower plating layer and the upper plating layer is an LGA substrate comprising gold (Au). The method of claim 1, The LGA substrate further comprising a solder ball formed on the upper plating layer. The method of claim 1, The LGA substrate further comprising a conductive adhesive layer interposed between the lower electrode pad and the lower plating layer and between the upper electrode pad and the upper plating layer. The method of claim 5, The conductive adhesive layer is an LGA substrate containing nickel (Ni). Preparing a core layer having upper and lower electrode pads formed on upper and lower surfaces, respectively; Forming an upper solder resist layer covering the upper electrode pad and a lower solder resist layer covering the lower electrode pad on upper and lower surfaces of the core layer; Removing a portion of the lower solder resist layer to form a lower opening exposing the lower electrode pads; Forming a lower plating layer on the lower electrode pad exposed at the lower opening; Removing a portion of the upper solder resist layer to form an upper opening exposing the upper electrode pad; And Forming an upper plating layer on the upper electrode pad exposed to the upper opening with a thickness thinner than the lower plating layer; LGA substrate manufacturing method comprising a. delete The method of claim 7, wherein And the lower plating layer and the upper plating layer are formed of gold (Au). The method of claim 7, wherein After forming the upper plating layer, The method of manufacturing an LGA substrate further comprising the step of forming a solder ball on the upper plating layer. The method of claim 7, wherein Before forming the lower plating layer, And forming a conductive adhesive layer on the lower electrode pads exposed to the lower openings. The method of claim 7, wherein Before forming the upper plating layer, And forming a conductive adhesive layer on the upper electrode pads exposed to the upper openings.
KR1020090052005A 2009-06-11 2009-06-11 LGA substrate and method for manufacturing the same KR101075677B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030010092A (en) * 2001-07-25 2003-02-05 엘지니꼬동제련 주식회사 concreat brick & block containing copper slag

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095972A (en) 2002-09-03 2004-03-25 Sumitomo Metal Electronics Devices Inc Manufacturing method for plastic package
KR100601485B1 (en) 2004-12-30 2006-07-18 삼성전기주식회사 BGA package board and method for manufacturing thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095972A (en) 2002-09-03 2004-03-25 Sumitomo Metal Electronics Devices Inc Manufacturing method for plastic package
KR100601485B1 (en) 2004-12-30 2006-07-18 삼성전기주식회사 BGA package board and method for manufacturing thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030010092A (en) * 2001-07-25 2003-02-05 엘지니꼬동제련 주식회사 concreat brick & block containing copper slag

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