KR101075152B1 - Vacuum arc deposition device having a dual banded plasma duct - Google Patents

Abstract

The present invention relates to a vacuum arc vapor deposition apparatus having a double-flex plasma duct, comprising: an arc evaporation unit for generating charged particles of a deposition material by cathode arc discharge, a substrate on which the charged particles are deposited, and the arc evaporation unit; A plasma duct blocking the atmosphere and having a bent portion, and magnetic field generating means installed at an outer circumference of the plasma duct to move the charged particles to the substrate by forming a magnetic field, wherein the plasma duct has a first radius of curvature and a first radius of curvature. And a second bend having a center of curvature and a second bend having a second center of curvature and a second radius of curvature that are continuously connected to the first bend and opposite to the first center of curvature. The first and second magnetic field sources are installed around the arc evaporation unit and around the substrate to surround the plasma duct. , Doedoe provided between the first and second magnetic field source is characterized in that sufficient to surround the outer periphery of the first and second bent portions respectively formed of first and second inductors manor.

Cathodic Arc Discharge, Deposition Materials, Magnetic Field Generator, Plasma Duct, Double Bend, Baffle

Description

Vacuum arc deposition device having a dual bend plasma duct

The present invention provides an arc evaporation unit for generating charged particles of a deposition material by cathodic arc discharge, a substrate on which the charged particles are deposited, and a plasma duct for receiving and blocking the arc evaporation unit and blocking the atmosphere, and by forming a magnetic field. It relates to a thin film deposition apparatus using a cathode arc discharge including a magnetic field generating means installed on the outer circumference of the plasma duct to move the charged particles to the substrate.

In general, the arc vapor deposition method, which is one of the physical vapor deposition methods, attaches a plasma duct to the front end of the target to transport charged particles generated by the arc discharge from the target, that is, plasma to the substrate to be coated. It is a method of depositing a thin film. In order to be able to apply this arc deposition method not only to simple cutting tools and general molds, but also to coating of precision molds and development of semiconductor devices, macroparticles that cause deterioration of the film produced by the arc deposition method (Macroparticle) Various methods have been sought to make a thin film deposition apparatus using a vacuum arc that can be prevented from being deposited on the substrate to be coated.

1 is a view schematically showing a series thin film deposition apparatus using a conventional cathode arc discharge.

As shown in the drawing, a conventional thin film deposition apparatus using a cathodic arc discharge includes a target 5 on which an arc evaporation material is generated, a plasma duct 8 provided at the front end of the target 5, and the target 5. It comprises a cylindrical electromagnet (1) for guiding the arc evaporation material so that the arc evaporation material generated in the (6) can be deposited on the substrate (6) installed opposite the target (5).

Among the arc evaporation materials (electrons, target ions, neutral particles, large particles, charged large particles) generated in the target 5, charged particles (electrons, target ions, charged large particles) provide a current to the electromagnet 1. It is moved along the magnetic field lines 7 of the magnetic field generated by the application and is deposited on the substrate 6. The large particles and the neutral particles are ionized by a high-density plasma (electrons and ions) at the center A of the electromagnet 1 and are deposited on the substrate 6, and the rest are attached to the inner wall of the plasma duct 8, and the like. Will be.

However, in the conventional thin film deposition apparatus using the conventional cathode arc discharge as described above, since the target 5 and the substrate 6 face each other directly, a portion of the large particles that are not ionized is deposited on the substrate 6. The quality will be degraded. Therefore, in order to solve the problem as described above, a thin film deposition apparatus using a cathode arc discharge in which the plasma duct 8 is bent and the magnetic field in the plasma duct 8 is distributed along the plasma duct 8 is proposed. There is a bar.

FIG. 2 is a schematic view of a rectangular thin film deposition apparatus using a conventional cathode arc discharge, and FIG. 3 is a schematic view illustrating a magnetic field distribution in FIG. 2.

As shown, a rectangular thin film deposition apparatus using a cathode arc discharge triggers a target 33 in which an arc evaporation material is generated, and a contact with the target 33 while a negative voltage is applied to the target 33. The electrode 35, the plasma duct 39 bent at an angle of approximately 90 °, the first electromagnet 46 provided outside the plasma duct 39 provided with the target 33, and the plasma duct 39 It consists of the 2nd electromagnet 48 provided in the curved part, and the 3rd electromagnet 50 provided so that this plasma duct 39 may be wrapped in the exit side of the said plasma duct 39. As shown in FIG.

In the rectangular thin film deposition apparatus using the conventional cathode arc discharge configured as described above, when the trigger electrode 35 contacts the target 33 while a voltage is applied to the target 33, an arc is generated instantaneously. As a result, the arc moves on the surface of the target 33 for a long time to release the arc evaporation material. At this time, when a current is applied to the first, second and third electromagnets 46, 48, 50, the magnetic force lines 40 are bent along the plasma duct 39 as shown in FIG. Therefore, the charged particles of the arc evaporation material generated from the target 33 are deposited on the substrate along the magnetic force line 40, and some neutral particles and large particles ionized by the high density plasma inside the plasma duct 39 also have the magnetic force line 40. Will be deposited on the substrate. In addition, the neutralized particles and the large particles that are not ionized do not reach the substrate by hitting the plasma duct 39, and are attached to the plasma duct 39 and the baffles 52 provided on the inner wall of the plasma duct 39. Therefore, in the rectangular thin film deposition apparatus using the conventional cathodic arc discharge as described above, large particles are removed from the plasma duct 39 wall or baffle 52 while advancing in the plasma duct 39.

However, in the rectangular thin film deposition apparatus using the conventional cathode arc discharge configured as described above, since a part of the magnetic force lines 40 at the bent portion of the plasma duct 39 are distributed to cross the plasma duct 39, Part of the whole particles (electrons and target ions, etc.) are lost after being guided into the inner wall of the bent portion of the plasma duct 39 and colliding therewith, resulting in a problem of lowering the deposition rate of the thin film.

The present inventors install a reflecting field source in the bent portion of the plasma duct, by pushing the magnetic force lines in the bent portion distributed along the center line of the plasma duct, thereby guiding the movement of the charged particles so that the charged particles do not hit the inner wall of the plasma duct The invention related to the thin film deposition apparatus using the cathode arc discharge has been registered as a patent registration No. 230279.

4 is a view schematically showing a thin film deposition apparatus disclosed in the patent registration No. 230279. In the thin film deposition apparatus illustrated in FIG. 4, an arc discharge occurs when the triggering electrode 117 contacts the target member 110 while falling down while a negative voltage is applied to the target member 110. The constrained ring 400, while being restrained and moved on the arc generating surface 111 of the target member 110 by the magnetic field generated in the first and second arc control magnetic field sources 120, 130, charged particles Generate.

The charged particles (ions, electrons, charged charged particles of the target member) is guided by the first magnetic field source 310 to proceed along one straight portion 220 of the plasma duct 200, induction magnetic field source 320 As a result, the plasma duct 200 changes in the bend portion A and proceeds toward the substrate 1, and is controlled by the second magnetic field source 330 to be deposited on the substrate 1. Some of the large particles and the neutral particles generated together with the charged particles in the arc generating surface 111 is ionized by the collision with some of the charged particles in the plasma duct 200 to be on the substrate 1 like the charged particles. To be deposited. Since the neutral particles and the large particles having no charge are not affected by the magnetic field, the neutral particles and the large particles are attached to and removed from the inner wall 200a and the baffle 250 of the plasma duct 200 having the curved portion A while moving linearly. Therefore, the neutral particles and the microparticles are hardly reached toward the substrate 1.

In this case, as shown in FIG. 5, the reflecting magnetic field source 350 to which the current is applied, the first magnetic field source 310 and the induction magnetic field source 320 in the bent portion A of the plasma duct 200. The magnetic force line 310 is pushed so as to be distributed along the central axis 210 of the plasma duct 200, and thus the transport rate of the charged particles is increased because most of the charged particles do not collide with the duct of the inner wall of the plasma.

The thin film deposition apparatus of Patent Registration No. 230279 having the above configuration has the advantage that the transfer rate of charged particles is improved because the magnetic force lines are distributed along the central axis of the plasma duct, which has an adverse effect on the deposition quality of the substrate. There is a mad side. This is because some of the charged particles having a relatively large size are more likely to reach the substrate along the magnetic field lines concentrated along the central axis of the plasma duct. In general, large particles generated from the target member and deposited on the surface of the substrate are known to deteriorate the deposition quality. Neutral particles are effectively blocked by the bent portion of the plasma duct provided in the thin film deposition apparatus of Patent No. 230279. However, there is a problem that the charged large particles frequently reach the substrate along the lines of magnetic force.

In addition, the thin film deposition apparatus of Patent No. 230279 should be made to a predetermined length or more so that the straight portion of the plasma duct can not reach the substrate when the neutral particles and the microparticles proceed from the target member toward the substrate in a straight line. That is, the straight line is different from the bent portion of the plasma duct so that the small particles and neutral particles, etc., which are not affected by the magnetic field formed in the plasma duct by the magnetic field generating means can be adsorbed to the inner wall of the plasma duct when going straight from one straight line of the plasma duct. The length to the portion must be provided so that the target member and the substrate can be blocked by being provided over the predetermined length according to the bent angle. Therefore, the conventional thin film deposition apparatus having the bend has a problem that the size must be considerably large.

It is therefore a primary object of the present invention to provide a vacuum arc deposition apparatus having a simple and effective configuration that prevents charged large particles from reaching the substrate along the magnetic force line of the plasma duct.

It is another object of the present invention to provide a vacuum arc vapor deposition apparatus that can effectively block the large particles charged as above from the substrate, while maintaining a fairly compact size of the device.

The present invention relates to a vacuum arc vapor deposition apparatus having a double-flex plasma duct, comprising: an arc evaporation unit for generating charged particles of a deposition material by cathode arc discharge, a substrate on which the charged particles are deposited, and the arc evaporation unit; A plasma duct blocking the atmosphere and having a bent portion, and magnetic field generating means installed at an outer circumference of the plasma duct to move the charged particles to the substrate by forming a magnetic field, wherein the plasma duct has a first radius of curvature and a first radius of curvature. And a second bend having a center of curvature and a second bend having a second center of curvature and a second radius of curvature that are continuously connected to the first bend and opposite to the first center of curvature. The first and second magnetic field sources are installed around the arc evaporation unit and around the substrate to surround the plasma duct. , Doedoe provided between the first and second magnetic field source is characterized in that sufficient to surround the outer periphery of the first and second bent portions respectively formed of first and second inductors manor.

In this case, the first radius of curvature and the second radius of curvature may be configured to be the same, in particular, the plasma duct is made of a cylindrical shape and the first bend and the second bend are the first center of curvature and the second center of curvature, respectively It is desirable to achieve a circumferential angle of 60 ° with respect to.

In addition, the plasma duct may further include a plurality of baffles installed to protrude from the inner wall toward the central axis, each of the baffles may be disposed perpendicular to the central axis of the plasma duct.

In an embodiment of the invention, the baffles are formed in a ring shape.

In an embodiment of the invention, the baffles are formed in an asymmetric ring shape.

The asymmetric ring shape means that the outer and inner surfaces of the baffle are circular, but the centers of the outer and inner surfaces are different, and the inner surface is biased to one side, so that the edge of the ring shape of the baffle is narrow on one side and wide on the other side. do.

 According to the present invention, the asymmetrical baffle is installed so that the lower portion of the asymmetrical baffle is located toward the central axis from the inner wall of the plasma duct far away from the first center of curvature to the first bent portion, From the inner wall of the plasma duct farther from the center of curvature toward the central axis, the lower portion of the asymmetrical baffle is located lower.

The arc evaporation unit includes a target member coupled to a cathode, and a triggering electrode for generating an arc by contacting the target member.

In addition, the first induction magnetic field source and the second induction magnetic field source may be spaced apart at equal intervals on both sides of the inflection surface connected to the first bend and the second bend.

Here, the first induction magnetic source and the second induction magnetic source may be arranged to be parallel to each other, wherein one side of the first induction magnetic source facing the arc evaporation portion is perpendicular to the central axis of the plasma duct Preferably, one side of the second induction magnetic field source facing the substrate is disposed to be perpendicular to the central axis of the plasma duct.

According to the present invention, a plasma duct which is a moving passage of charged particles has a first curvature having a first radius of curvature and a first curvature center, a second curvature center continuously connected to the first curvature and facing the first curvature center; The first bent part and the second bent part are formed in a double bent shape having a second radius of curvature, and the large particles having a relatively heavy mass cannot follow the magnetic force lines formed on the central axis of the second bent part due to their inertia. Since the impingement hits the wall surface of the plasma duct at the connected inflection portion, the large particles that adversely affect the deposition quality are effectively blocked from the substrate.

In addition, since the present invention includes a double curved plasma duct, the length of the straight portion can be considerably shorter than that of the plasma duct having a single curved portion as in the prior art, thereby keeping the size of the overall vacuum arc deposition apparatus compact. It also has the advantage that it can.

In addition, in the case of the conventional uniform ring-shaped baffle, the charged particles collide with the baffle due to inertia. From the inner wall of the plasma duct far from the center and the second center of curvature toward the central axis, the lower portion of the asymmetrical baffle is installed so that the lower portion is located, which significantly reduces the amount of baffle collision of the charged particles, thereby improving the amount of charged particles. Let's

In the case of large particles, the straight and reflective movements are mainly performed in the plasma duct, so that the baffles are removed by the upper portion of the baffles during the straight and reflective movements, thereby improving the deposition rate of the thin film.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, in order that the important technical features of the present invention can be more clearly highlighted, a description of the overlapping configuration with the prior art will be briefly described or omitted.

The present invention relates to a thin film deposition apparatus using a cathode arc discharge, as shown in Figure 6, the arc evaporation unit 100, the charged particles of the deposition material is generated by the cathode arc discharge, and the charged particles are deposited Plasma duct 300 to accommodate the substrate 200 and the arc evaporation unit 100 to block the atmosphere and the bent portion, and to move the charged particles to the substrate 200 by forming a magnetic field ( 300) comprises a magnetic field generating means 400 is installed on the outer periphery.

Here, the arc evaporation part 100 includes a target member 112 coupled to the cathode body 110, and a trigger electrode 114 contacting the target member 112 to generate an arc. The negative electrode body 110 supporting the target member 112 is connected to a negative electrode of an arc power supply unit (not shown) that outputs a negative voltage (current of 0 to 300 A) of approximately 0 to 100 V. The member 112 is energized with the negative electrode body 110. In the state in which the negative voltage is applied to the target member 112, the trigger electrode 114, which is provided to be rotatable on one side of the plasma duct 300, comes into contact with and falls, thereby causing arc discharge. Arc evaporation material, such as charged particles, is generated at the surface of 112). At this time, the negative electrode body 110 is preferably provided with a cooling means (not shown), for example, a water cooling device for preventing the temperature of the target member 112 rises excessively during the generation of charged particles.

In addition, the plasma duct 300 is continuously connected to the first bent portion 310 and the first bent portion 310 having a first radius of curvature R1 and a first center of curvature C1 and the first curvature. And a second bend 320 having a second center of curvature C2 and a second radius of curvature R2 opposite to the center C1. In other words, the plasma duct 300 provided in the present invention may be referred to as a double curved plasma duct having an “S” shape as a whole, and the bending directions of the first bent part 310 and the second bent part 320 are opposite to each other. Since the connection surface of the first and second bends (310, 320) is a kind of inflection surface 330 can be said.

In a preferred embodiment of the present invention, the first radius of curvature R1 and the second radius of curvature R2 are configured such that their sizes are the same. In particular, the plasma duct 300 has a cylindrical shape, and as shown in FIG. 6, the first bend 310 and the second bend 320 are respectively the first center of curvature C1 and the second curvature. It is preferable to make a circumferential angle of 60 ° with respect to the center C2.

In addition, the plasma duct 300 may further include a plurality of baffles 340 installed to protrude from the inner wall toward the central axis in the longitudinal direction. The baffles 340 are curved surfaces that are connection surfaces of the first and second curved portions 310 and 320 that are reversed in the bending direction as well as neutral and large particles having no charge moving along the inside of the plasma duct 300. 330) to effectively adsorb the charged large particles that can not follow the line of magnetic force because of their inertia.

Each of the baffles 340 may be disposed perpendicular to the central axis of the plasma duct 300. In the embodiment of the present invention, the baffles 340 are formed in a ring shape.

The magnetic field generating means 400 includes a first magnetic field source 410 and a second magnetic field source 412 which are respectively installed around the arc evaporation part 100 and around the substrate 200 to surround the plasma duct 300. And a first induction magnetic field source 420 and a second induction magnetic field source 422 provided between the first and second magnetic field sources 410 and 412, respectively surrounding outer peripheries of the first and second bends 310 and 320.

The first magnetic field source 410 guides the charged particles generated at the surface of the target member 112 to travel in a straight line part partially included in the plasma duct 300, and the first and second magnetic field sources 420 and 422. ) Changes the direction of the charged particles so that the charged particles do not hit the inner wall of the plasma duct 300 at the first bend 310 and the second bend 320, respectively. The second magnetic field source 412 adjusts the degree and direction in which charged particles whose directions are changed by the first magnetic field source 410 and the first and second induced magnetic field sources 420 and 422 are distributed in the substrate 200. Each of the first and second magnetic field sources 410 and 412 and the first and second inductive magnetic field sources 420 and 422 may be provided as permanent magnets, but more preferably, the magnetic field can be controlled by a current. The shape of the magnetic field formed inside the plasma duct 300 by the first and second magnetic field sources 410 and 412 and the first and second induction magnetic field sources 420 and 422 is illustrated in FIG. 7.

In addition, in the embodiment of the present invention, the first induction magnetic field source 420 and the second induction magnetic field source 422 is centered on the inflexion surface 330 to which the first bent portion 310 and the second bent portion 320 are connected. It can be installed spaced apart at equal intervals on both sides. Here, the first induction magnetic field source 420 and the second induction magnetic field source 422 may be arranged to be parallel to each other, wherein one side of the first induction magnetic field source 420 facing the arc evaporation unit 100 One side of the second induction magnetic field source 422 disposed to be perpendicular to the central axis of the plasma duct 300, and facing the substrate 200, may be disposed with respect to the central axis of the plasma duct 300. It is advantageous for the formation of the magnetic field lines, which are preferably arranged vertically.

According to the present invention having the configuration as described above, the first bent portion 310 and the first so that the magnetic duct line is formed so that the plasma duct 300, which serves as the moving passageway of the charged particles, has a double curved shape of the "S" shape as a whole. Since the two bends 320 are connected, the first bent part 310 and the second bent part can not follow the magnetic force line formed in the central axis region of the second bent part 320 due to its inertia. Since the 320 is impinged on the inner wall of the plasma duct 300 in the portion of the inflection surface 330 is connected, the large particles that adversely affect the deposition quality does not reach the deposition surface of the substrate 200.

8 is a plan view of an asymmetrical baffle, FIG. 9 is an embodiment in which an asymmetrical baffle is installed in the first bent portion 310 and the second bent portion 320, and the remaining straight portions of the inner wall of the duct are provided with a symmetrical ring-shaped baffle. Shows.

The lower portion of the asymmetrical baffle is installed in the first curved portion 310 toward the central axis from the inner wall of the plasma duct 300 far from the first center of curvature, and the second curved portion 320 2 so that the lower portion of the asymmetrical baffle is positioned toward the central axis from the inner wall of the plasma duct farther from the center of curvature, so as to reduce the loss of charged particles due to collision at the first and second bends. The transfer rate of the charged particles is improved, and the large particles increase the collision by the high top of the asymmetrical baffle, so that the large particles that adversely affect the deposition quality do not reach the deposition surface of the substrate 200.

While the invention has been illustrated and described in connection with specific embodiments, it will be understood that various modifications and variations can be made without departing from the spirit and scope of the invention as defined by the appended claims. Anyone who owns it can easily find out.

1 is a schematic view of a series thin film deposition apparatus using a conventional cathode arc discharge.

Figure 2 is a schematic view showing a rectangular thin film deposition apparatus using a conventional cathode arc discharge.

3 is a view schematically showing a magnetic field distribution in a rectangular thin film deposition apparatus according to FIG. 2;

4 is a view schematically showing a thin film deposition apparatus disclosed in Patent No. 230279.

5 is a view schematically showing a magnetic field distribution in the thin film deposition apparatus according to FIG. 4.

Figure 6 schematically shows a vacuum arc deposition apparatus having a double bend plasma duct according to the present invention.

7 is a schematic view showing a magnetic field distribution in a vacuum arc deposition apparatus having a double bend plasma duct according to FIG.

8 schematically shows an asymmetric baffle according to the invention.

9 is a schematic drawing of an asymmetrical baffle provided in a first curved portion and a second curved portion as a cutting plane in a double curved plasma duct and a schematic view of a symmetrical baffle provided in a straight line of the duct other than the first curved portion and the second curved portion;

DESCRIPTION OF REFERENCE NUMERALS

1000: vacuum arc deposition apparatus

100: arc evaporation unit 110: cathode

112: target member 114: triggering electrode

200: substrate 300: plasma duct

310: first bent part 320: second bent part

330: inflection surface 340: baffle

400: magnetic field generating means 410: first magnetic field source

412: second magnetic field source 420: first induced magnetic field source

422: second induction field

R1: first radius of curvature R2: second radius of curvature

C1: first center of curvature C2: second center of curvature

Claims (14)

An arc evaporation unit in which charged particles of a deposition material are generated by a cathode arc discharge, a substrate on which the charged particles are deposited, a plasma duct which receives and blocks the arc evaporation unit from the atmosphere and has a bent portion, and the charged particles by magnetic field formation In the vacuum arc vapor deposition apparatus using a cathode arc discharge comprising a magnetic field generating means installed on the outer circumference of the plasma duct to move to the substrate, The plasma duct, A first bend having a first radius of curvature and a first center of curvature, A connecting surface of the first and second bent portions forms a curved surface, including a second bent portion continuously connected to the first bent portion and having a second center of curvature and a second radius of curvature opposite to the first center of curvature. It consists of a double curved plasma duct having an S-shape as a whole, The magnetic field generating means, First and second magnetic field sources installed around the arc evaporation unit and around the substrate to surround the plasma duct; It is formed between the first and the second magnetic field source and comprises a first and a second induction magnetic field source surrounding the outer periphery of the first and second bends, respectively, The plasma duct further includes a plurality of baffles installed to protrude from the inner wall toward the central axis, The baffle is made of an asymmetric ring shape, The asymmetrical ring-shaped baffles are vacuum arc deposition apparatus having a double curved plasma duct, characterized in that provided in the first bend and the second bend. The method of claim 1, And a first bending radius and a second bending radius are the same. 3. The method of claim 2, The plasma duct is made of a cylindrical shape, And the first curved portion and the second curved portion form a circumferential angle of 60 ° with respect to the first center of curvature and the second center of curvature, respectively. delete The method of claim 1, And each of the baffles is disposed perpendicular to the central axis of the plasma duct. The method of claim 1, The baffles are vacuum arc deposition apparatus having a double curved plasma duct, characterized in that comprising asymmetric and symmetrical ring-shaped baffles. The method of claim 6, The baffles may be disposed according to the arrangement of the first and second induction sources so as to effectively remove large particles and effectively transport plasma or charged particles to different degrees of magnetic fields according to the arrangement of the first and second induction sources. A vacuum arc vapor deposition apparatus having a double curved plasma duct, characterized in that configured to select the installation position and type of asymmetrical or symmetrical ring-shaped baffles. delete The method of claim 1, The arc evaporation unit, A target member coupled to the negative electrode body, And a trigger electrode for generating an arc in contact with the target member. The method of claim 1, The first induction field source and the second induction field source is a vacuum having a double bent plasma duct, characterized in that spaced at equal intervals on both sides of the inflection surface connected to the first bend and the second bend portion Arc deposition apparatus. The method of claim 10, And the first induction magnetic field source and the second induction magnetic field source are arranged in parallel with each other. The method of claim 11, One side of the first induction magnetic field source facing the arc evaporation unit is disposed to be perpendicular to the central axis of the plasma duct, and one side of the second induction magnetic field source facing the substrate is disposed in the plasma duct. Vacuum arc deposition apparatus having a double curved plasma duct, characterized in that arranged to be perpendicular to the central axis. An arc evaporation unit in which charged particles of a deposition material are generated by a cathode arc discharge, a substrate on which the charged particles are deposited, a plasma duct which receives and blocks the arc evaporation unit from the atmosphere and has a bent portion, and the charged particles by magnetic field formation In the asymmetrical baffle provided toward the central axis from the inner wall of the plasma duct of the thin film deposition apparatus using a cathode arc discharge including a magnetic field generating means installed on the outer circumference of the plasma duct for moving the substrate to the substrate, The plasma duct, A first bend having a first radius of curvature and a first center of curvature, A connecting surface of the first and second bent portions forms a curved surface, including a second bent portion continuously connected to the first bent portion and having a second center of curvature and a second radius of curvature opposite to the first center of curvature. It consists of a double curved plasma duct having an S-shape as a whole, The magnetic field generating means, First and second magnetic field sources installed around the arc evaporation unit and around the substrate to surround the plasma duct; It is formed between the first and the second magnetic field source and comprises a first and a second induction magnetic field source surrounding the outer periphery of the first and second bends, respectively, The lower portion of the asymmetrical baffle is installed in the first bent portion toward the central axis from the inner wall of the plasma duct far away from the first center of curvature, And a lower portion of the asymmetrical baffle is positioned toward the central axis from the inner wall of the plasma duct far away from the second center of curvature to the second bent portion. delete

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