KR101071452B1 - 다계조 포토마스크 및 그것을 이용한 패턴 전사 방법 - Google Patents

다계조 포토마스크 및 그것을 이용한 패턴 전사 방법 Download PDF

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Publication number
KR101071452B1
KR101071452B1 KR1020090018683A KR20090018683A KR101071452B1 KR 101071452 B1 KR101071452 B1 KR 101071452B1 KR 1020090018683 A KR1020090018683 A KR 1020090018683A KR 20090018683 A KR20090018683 A KR 20090018683A KR 101071452 B1 KR101071452 B1 KR 101071452B1
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KR
South Korea
Prior art keywords
region
light
semi
film
transmissive
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KR1020090018683A
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English (en)
Korean (ko)
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KR20090096338A (ko
Inventor
고이찌로 요시다
Original Assignee
호야 가부시키가이샤
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Publication of KR20090096338A publication Critical patent/KR20090096338A/ko
Application granted granted Critical
Publication of KR101071452B1 publication Critical patent/KR101071452B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020090018683A 2008-03-06 2009-03-05 다계조 포토마스크 및 그것을 이용한 패턴 전사 방법 KR101071452B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008056700 2008-03-06
JPJP-P-2008-056700 2008-03-06

Publications (2)

Publication Number Publication Date
KR20090096338A KR20090096338A (ko) 2009-09-10
KR101071452B1 true KR101071452B1 (ko) 2011-10-10

Family

ID=41094650

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090018683A KR101071452B1 (ko) 2008-03-06 2009-03-05 다계조 포토마스크 및 그것을 이용한 패턴 전사 방법

Country Status (4)

Country Link
JP (1) JP2009237569A (zh)
KR (1) KR101071452B1 (zh)
CN (1) CN101526733B (zh)
TW (1) TW200942963A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5215019B2 (ja) * 2008-03-28 2013-06-19 Ｈｏｙａ株式会社 多階調フォトマスク及びその製造方法、並びにパターン転写方法
CN103345118A (zh) * 2013-07-05 2013-10-09 深圳市华星光电技术有限公司 光罩、玻璃基板及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007171651A (ja) * 2005-12-22 2007-07-05 Dainippon Printing Co Ltd 階調をもつフォトマスクの欠陥修正方法および階調をもつフォトマスク
JP2008046623A (ja) * 2006-07-21 2008-02-28 Dainippon Printing Co Ltd 階調マスク

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942356A (en) * 1996-03-30 1999-08-24 Hoya Corporation Phase shift mask and phase shift mask blank

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007171651A (ja) * 2005-12-22 2007-07-05 Dainippon Printing Co Ltd 階調をもつフォトマスクの欠陥修正方法および階調をもつフォトマスク
JP2008046623A (ja) * 2006-07-21 2008-02-28 Dainippon Printing Co Ltd 階調マスク

Also Published As

Publication number Publication date
KR20090096338A (ko) 2009-09-10
CN101526733B (zh) 2012-10-10
JP2009237569A (ja) 2009-10-15
CN101526733A (zh) 2009-09-09
TW200942963A (en) 2009-10-16

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