KR101045009B1 - Temperature Evaluated Equipment of Semiconductor RAMRandom Access Memory with Enclosed Cycling Type - Google Patents

Abstract

SUMMARY OF THE INVENTION The present invention provides a semiconductor RAM evaluation apparatus capable of changing various environmental conditions from a low temperature band to a high temperature band using a thermoelectric semiconductor. In addition, by minimizing the influence of the external environment during the evaluation process of the semiconductor RAM, it prevents additional heat loss due to external conditions, thereby improving the energy efficiency of the semiconductor RAM evaluation device, and condensing moisture that may occur in the temperature control device using the thermoelectric semiconductor. To provide a stable and reliable semiconductor RAM evaluation apparatus.

Thermoelectric Semiconductor, Semiconductor RAM, Performance Evaluation, Temperature Control, Dehumidification

Description

Temperature Evaluator for Semiconductor RAM with Enclosed Circulation Structure {Temperature Evaluated Equipment of Semiconductor Random Access Memory (RAM) with Enclosed Cycling Type}

The present invention relates to a method for evaluating a semiconductor ram in which the evaluation environment of a semiconductor ram can be improved by applying a hermetic circulation structure in which the evaluation environment of the semiconductor ram is isolated from external environmental conditions. It is about. The present invention also relates to a method of improving the reliability of evaluation results in a temperature evaluation device of a semiconductor RAM by enabling a change in various evaluation conditions and precise environmental control using a thermoelectric semiconductor.

A random access memory (RAM) refers to a kind of main memory device capable of reading and writing, and has a structure in which a plurality of integrated circuits (ICs) are mounted on a substrate on which a semiconductor circuit is formed. In particular, semiconductor RAMs are increasing in capacity according to trends such as high capacity, high speed, and high integration of semiconductor devices, and at the same time, the amount of heat generated from semiconductor RAMs is also increasing proportionally. Therefore, in order to manufacture a semiconductor RAM that can be stably operated in various user and use environments, semiconductor RAM manufacturers are performing performance tests under various environmental conditions (temperature conditions).

However, in order to test the performance of the semiconductor RAM according to the environmental conditions, not only the test in the high temperature band but also the evaluation in the room temperature and the low temperature band (0 ° C. to 20 ° C.), but the evaluation in the low temperature band is not performed properly. In some cases, the semiconductor RAM performance evaluation apparatus is charged into a large environmental chamber using an expensive large environmental chamber, but there is a big problem in the reliability of the evaluation result along with the spatiotemporal loss.

As an alternative to solve this problem, in some cases, a method of increasing the efficiency of the inspection process by locally heating only a semiconductor RAM, which is a direct target of performance evaluation, is performed using a thermoelectric semiconductor. However, in order to control the evaluation conditions of the semiconductor RAM by using a thermoelectric semiconductor, it is necessary to secure sufficient heat dissipation capacity (space) of the thermoelectric semiconductor, especially when the low temperature band is evaluated. Efficiency and productivity issues present spatial difficulties. In addition, the increase in the amount of heat generated by the increase in the capacity of the semiconductor RAM makes it difficult to control the temperature effectively and precisely. Therefore, the temperature control evaluation device of the semiconductor RAM using the thermoelectric semiconductor is currently performing the evaluation to a simple high temperature band. to be.

In addition, the thermoelectric semiconductor uses a large amount of power consumption to heat and cool the semiconductor RAM, and there is an additional generation of heating or cooling amount of the thermoelectric semiconductor due to the influence of the external environment, thereby increasing the amount of power supplied to the thermoelectric semiconductor. This will act as a factor to reduce energy efficiency. In addition, when performing low-temperature and high-temperature evaluation using the thermoelectric semiconductor, moisture condensation in the air may occur in the heat exchange part of the thermoelectric semiconductor, and these may fall on the semiconductor ram and the mounting device in which the semiconductor ram is inserted and fixed. However, since the semiconductor RAM and the mounting device in which the semiconductor RAM is inserted and evaluated are composed of many electronic components and electronic circuits, there is a fatal problem when water generated in the temperature control device by the thermoelectric semiconductor falls on them.

Therefore, in the evaluation device of the semiconductor RAM using the thermoelectric semiconductor, the reliability of the evaluation result is secured by minimizing the interference by the influence of the external environment, and the energy efficiency of the evaluation device is improved and evaluated by preventing the additional heat loss caused by the external environment. There is a need for a method of preventing the condensation of moisture that may occur during the process to ensure the stability of the evaluation apparatus.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems and to provide an evaluation apparatus capable of changing various environmental conditions from a low temperature band to a high temperature band in an evaluation method of a semiconductor RAM. In addition, by minimizing the influence of the external environment occurring during the evaluation process, it is intended to improve the energy efficiency of the semiconductor RAM evaluation device by preventing additional heat loss due to external conditions. In addition, it is an object of the present invention to provide a stable and reliable evaluation method by preventing the condensation of moisture that may occur in the temperature control device using a thermoelectric semiconductor.

The present invention is to solve the above problems, the lower chamber 20 made of an outer partition filled with a heat insulating material is installed around the semiconductor RAM 30 mounted on the mounting device 40, the lower chamber 20 The upper chamber 10 is equipped with a thermoelectric device unit 50 mounted therein to form a circulating chamber of an airtight structure that is blocked from the external environment.

Inside the upper chamber 10, a thermoelectric device 50 for forming an evaluation environment is mounted on the semiconductor RAM 30. The thermoelectric device 50 is provided with a thermoelectric semiconductor 53 on both sides with a heat exchanger 52 for supplying hot and cold air to the semiconductor RAM 30, and on the other side of the thermoelectric semiconductor 53. A heat dissipation unit composed of a heat dissipation plate 61 and a heat dissipation fan 62 for dissipating the calorific value of the thermoelectric semiconductor 53 is configured. At this time, the heat dissipation part is enclosed by the partition wall 60 made of a metal structure to be distinguished from the closed circulation chamber, to prevent thermal interference with the air circulating in the sealed chamber. In addition, by installing a dehumidifying unit 71 using a moisture absorbent 72 or the like on the circulation path of the air supplied to the semiconductor RAM 30 via the heat exchange unit 52, the influence of the moisture of the semiconductor RAM and the mounting device is increased. This makes it possible to perform stable and reliable evaluation in the evaluation device of the semiconductor RAM.

Disclosure of Invention The present invention provides a device for evaluating a temperature of a semiconductor ram that can change various environmental conditions and precise temperature control using a thermoelectric semiconductor. Through the present invention, it is possible to evaluate the influence of the environmental conditions of the semiconductor RAM through the change of various temperature conditions from the low temperature band to the high temperature band, and by adopting a sealed circulation structure for the thermoelectric device part and the semiconductor ram, It is possible to improve the energy efficiency of the thermoelectric unit by blocking the influence. In addition, by installing an additional dehumidifying unit for removing moisture of the air circulating in the sealed chamber, it is expected that it is possible to enable stable and reliable evaluation in the semiconductor RAM evaluation apparatus.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Detailed descriptions of embodiments of the present invention will be described below with reference to the accompanying drawings.

First, FIG. 1 is a front view illustrating a vertical structure evaluation device in a closed cycle semiconductor RAM evaluation device according to the present invention. The semiconductor RAM 30 is inserted into the mounter 40 serving as the main board of the computer and mounted on the base frame. At this time, the mounter 40 has a structure in which one or more semiconductor RAMs 30 can be mounted, and in this drawing, the load test (evaluating under an environment in which the semiconductor RAM is actually driven while the three semiconductor RAMs 30 are mounted and operated) is performed. ), But the number of evaluation RAMs can be freely selected from one or more ranges, and slots for mounting a plurality of semiconductor RAMs can be installed. This can be done. In order to control the influence of the external environment such as temperature and humidity, a lower chamber 20 including a rectangular partition wall is formed around the slot in which the semiconductor RAM 30 for evaluation is mounted. The reference numeral 20 is engaged with the size and structure of the thermoelectric device unit 50 for environmental control of the semiconductor RAM to be installed on the upper portion of the lower chamber. Therefore, while preventing the influence of the external environment during the evaluation process and at the same time to block the heat and cold air generated during the precise temperature control process of the semiconductor RAM 30 to the outside, as a result of evaluating the semiconductor RAM (30) In this regard, the reliability of the precise control and evaluation of the semiconductor RAM is improved, and the energy loss of the thermoelectric unit 50 is reduced, thereby increasing the energy efficiency of the entire semiconductor RAM evaluation apparatus. In addition, when the semiconductor RAM is evaluated at high temperature, the hot heat generated from the thermoelectric unit 50 is prevented from being discharged to the outside, thereby bringing an effect of preventing the temperature rise around the evaluation device.

The upper portion of the lower chamber 20 installed surrounding the semiconductor ram 30 inserted into and fixed to the mounter 40 is provided with a thermoelectric device 50 for environmental control such as temperature and humidity of the semiconductor ram. The thermoelectric unit 50 serves to provide a desired evaluation condition (temperature, humidity) to the semiconductor RAM, and as shown in FIG. 1, both sides of the heat exchanger 52 with the heat exchanger 52 interposed therebetween. The thermoelectric semiconductor 53 and the heat dissipation parts 61 and 62 are provided in a symmetrical structure. The thermoelectric semiconductor 53 is characterized in that exothermic (heating) and endothermic (cooling) phenomena occur simultaneously at both ends of the thermoelectric semiconductor according to the supply of electrical energy, and the direction of the heat generating and endothermic surfaces is changed by switching the polarity of the electrical energy. It has great features. Therefore, in order to heat and cool a specific object (referred to as a semiconductor ram in the present invention), a cooling system using only one thermoelectric semiconductor 53 is not required to install a heating device such as a heating wire and a cooling device using a refrigerant gas. Since heating can be implemented at the same time, it has the advantage of enabling evaluation according to various temperature conditions as in the semiconductor RAM evaluation device.

Referring to Figure 1 in detail the configuration of the thermoelectric device 50 according to the example of the present invention, the heat dissipation portion consisting of a fin-type heat sink 61 and the heat radiation fan 62 on one surface of the thermoelectric device 50 The opposite side is a structure in which a heat exchanger 52 having a vertical flow path formed therein is coupled with a thermoelectric semiconductor 53 interposed therebetween. At this time, the heat dissipation capacity of the heat dissipation parts 61 and 62 is proportional to the effective contact area with the air of the heat dissipation plate 61 together with the air volume of the heat dissipation fan 62. In the present invention, the heat dissipation capacity (efficiency) of the heat dissipation plate 61 is determined. In order to increase the heat exchange area, a large number of thin metal fins (aluminum or alloys thereof, copper, etc.) are inserted into a metal plate grooved by the thickness of the metal fins, and bonded to each other. To significantly reduce the size of the heat dissipation unit.

The other surface of the thermoelectric semiconductor 53 is provided with a heat exchanger 52 for supplying cold air and hot air to the semiconductor ram 30 as an evaluation target to control the semiconductor ram to a desired temperature condition. The heat exchanger 52 is formed in a rectangular box shape, and the thermoelectric semiconductor 53 is joined to both sides of the outside, and the inside of the heat exchanger 52 has a plurality of fins for heat exchange with air. At this time, the fin structure therein may be a plurality of fins are formed in the same manner as the heat sink structure of the extrusion type, or a wavy louver fin for improving the heat exchange efficiency. Alternatively, as in the method applied to the structure of the heat sink in the present invention, it may have a fin-bonded heat dissipation structure in which a plurality of thin metal fins are grooved and bonded to the base metal plate. In addition, the thermoelectric device 50 is coupled to the thermoelectric semiconductor 53 and the heat sink 61 on another surface of the heat exchanger 52, thereby completing a symmetrical structure.

The thermoelectric semiconductor 53 needs to generate a large amount of heat in order to heat and cool the semiconductor RAM 30 to a desired evaluation temperature. In addition, the thermoelectric semiconductor 53 has a characteristic in which exothermic and endothermic actions are simultaneously expressed at both ends of the thermoelectric semiconductor. In this case, there is a difference in the amount of heat generation and endotherm, and the amount of heat generation is always greater than the amount of power supply compared to the endothermic amount. do. Therefore, in order to cool and heat the semiconductor RAM using the thermoelectric semiconductor 53, the thermoelectric device unit 50 is designed based on the endothermic (cooling) amount of the thermoelectric semiconductor, and the heat generated from the heat generating surface is effectively radiated to the outside. The design of the heat dissipation parts 61 and 62 is an essential element in the design of the temperature control device. However, despite the effective heat dissipation design, there is a limit to the heat dissipation capacity of the heat dissipation part, and since the thickness of the thermo-conductor is thin (for general general-purpose type thermo-conductors, the thickness is about 4 mm), Part of the heat generated by the heat dissipation affects the heat absorbing surface of the thermoconductor due to heat transfer effects such as conduction, convection, and radiation. Therefore, in order to prevent this, in the present invention, a metal block (aluminum or its alloy, copper, etc.) 54 having the same size as the thermoelectric semiconductor is inserted between the thermoelectric semiconductor 53 and the heat exchanger 52, and also thermoelectric. The heat dissipation unit and the heat exchange unit of the device unit 50 was filled with a heat insulator 55 to thermally block the heat dissipation unit and the heat exchange unit.

1 to 3, the heat dissipation parts 61 and 62 of the thermoelectric device part 50 are surrounded by the metal structure 60. The inside of the metal structure 60 is joined with a heat insulating material, and the inlet of the air introduced by the heat dissipation fan 62 and the outlet of the air discharged through the heat sink 61 are both along the fin direction of the heat sink 61. It is open to the outside of the upper chamber 10 to the side. In addition, the upper chamber 10 having the box-shaped partition wall is provided at the outer portion of the thermoelectric device 50 at a predetermined interval from the thermoelectric device 50. The inside of the upper chamber 10 is wrapped with a heat insulating material and formed to have the same size as the lower chamber 20 on the mounter 40 on which the semiconductor RAM 30, which is the evaluation target object, is mounted, and the air inside is discharged to the outside. To prevent it. That is, the entire thermoelectric device unit 50 has a closed circulation structure formed of a double partition structure, in which external air is blocked from entering. In addition, the heat dissipation part inside the thermoelectric device part has a structure that separates the generated heat of the thermoelectric semiconductor 53 for cooling and heating the semiconductor RAM 30 and the air circulating in the chamber by installing the inner partition 60. Therefore, the cold air and heat generated by the thermoelectric semiconductor 53 continuously circulate only the heat exchanger 52 and the semiconductor RAM 30 as the evaluation target without any external influence, which may occur during the evaluation process of the semiconductor RAM. It prevents the additional input of heat by external environment, reduces energy loss and enables stable and accurate performance evaluation of semiconductor RAM.

2 and 3 are views illustrating examples of the present invention from the side and the top, wherein the heat dissipation parts 61 and 62 of the thermoelectric device part 50 are connected to the upper chamber 10 of the thermoelectric device part through the inner partition 60. It is separated from and the outside air flowing into the heat radiating part is discharged to the outside through the heat radiating part. In addition, the thermoelectric device is sealed in the box-shaped upper chamber 10, and the amount of cooling and heating by the thermoelectric semiconductor 53 is transferred to the heat exchanger 52 and the fan 51 installed on the heat exchanger 52. Is supplied to the semiconductor RAM 30 to control the temperature of the semiconductor RAM. At this time, the air passing through the semiconductor RAM is supplied to the upper portion of the heat exchanger 52 again by the fans 57 installed on both side surfaces of the lower end of the thermoelectric device, and undergoes a continuous circulation process.

4 illustrates another embodiment of the present invention. In order to evaluate the semiconductor RAM 30, the semiconductor RAM is mounted in a slot of the mounter 40, which functions as a main board of a computer, and a desired temperature is achieved through the thermoelectric unit 50 using the thermoelectric semiconductor 53. Evaluation is made by continuously supplying the cool air and heat of the condition to the semiconductor RAM through the heat exchange unit 52. At this time, when the low temperature evaluation or when switching from the high temperature evaluation to the low temperature evaluation, there is a risk that moisture in the sealed chambers 10 and 20 is condensed and falls into the semiconductor RAM and the mounting device. Therefore, the evaluation device for the semiconductor RAM requires a means for preventing condensation inside the chamber. As shown in FIG. 4, the basic configuration and shape are the same as those described with reference to FIG. 1, and a dehumidifying unit 71 for removing moisture in the air is additionally installed in the sealed chamber of the thermoelectric unit described with reference to FIG. 1. Has

Air circulating in the hermetically sealed chamber is heated or cooled while passing through the heat exchanger 52, and controls the temperature of the semiconductor ram while passing through the semiconductor ram 30. After the heat exchange with the semiconductor RAM, the air is again sent to the upper portion of the heat exchanger 52 by the fans 57 installed on both sides of the thermoelectric device 50 to circulate. The dehumidifying part 71 is installed on the circulation path sent to the upper heat exchange part 52. The dehumidifying unit 71 removes moisture from the air inside the sealed chamber to prevent condensation of moisture that may occur during the evaluation process. The air passing through the semiconductor ram is provided on both sides of the lower chamber 20. Pass through the fan 57 and passes through the duct structure provided on both sides of the heat dissipation unit. At this time, the dehumidifying part 71 which is filled with the moisture absorbent 72 is provided on the path | route of a duct structure. The dehumidifying unit 71 is a rectangular parallelepiped having a mesh structure and is installed and fixed to an upper end of the lower fan 57, and the inside of the dehumidifying unit 71 is filled with an absorbent 72 such as silica gel, so that air introduced by the lower fan 57 is removed. The moisture is removed while passing through the dehumidifying unit 71 filled with the absorbent 72. The dehumidified air is repeatedly supplied to the semiconductor RAM through the heat exchanger 52 by the upper fan 51. At this time, the moisture absorbent 71 may be used, such as silica gel and can be freely selected without departing from the object of the present invention.

5 and 6 illustrate yet another embodiment of the dehumidifying unit mounted to the thermoelectric unit 50 in the temperature control device of the semiconductor RAM 30. FIG. 5 shows the shape of the dehumidifying part 81 having a layered structure inclined outward from the inside of the rectangular parallelepiped structure in which the air inlet and outlet parts are formed. In this case, a plurality of small metal balls 82 are mounted on each layer, and moisture in the air introduced into the dehumidifying unit 81 by the lower fan 57 is a cold metal ball during the process of passing through the dehumidifying unit 81. While contacting 82, moisture condenses on the surface of the metal sphere 82. The condensed water gathers outwards along the inclination of the dehumidifying part 81 and falls down again to be collected in a metal tank 83 installed at the lower end of the dehumidifying part and discharged to the outside.

6 shows the structure of the dehumidifying unit by the dew point control method using the thermoelectric semiconductor 53, and the position of the dehumidifying unit is installed on the upper end of the lower fan 57 as described above. Air introduced by the lower fan 57 through the semiconductor RAM is sent to the heat exchange part 52 again through the dew condensation part 91 on the dehumidifying part, wherein the air containing moisture is condensation cooled by the thermoelectric semiconductor. Water is condensed while passing through the portion 91 and collected in the metal tank 83 of the lower portion. In the dehumidifying unit, the heat dissipating unit 92 of the thermoelectric semiconductor is exposed to the outside of the chamber, and the dehumidifying apparatus using the thermoelectric semiconductor according to the dew point control method does not need excessive cooling of the condensation unit 91, so that the heat dissipating unit of the dehumidifying unit ( 92 may be applicable to the method by natural convection to be exposed to the outside of the upper chamber 10 to radiate heat.

FIG. 7 is a view illustrating another embodiment of a thermoelectric device according to the present invention, and illustrates a horizontal structure of the thermoelectric device, and the basic configuration of the thermoelectric device using the thermoelectric semiconductor is as described above. First, the semiconductor RAM 30 is inserted into and fixed to the mounter 40 installed on the base frame to evaluate the semiconductor RAM 30. At this time, the lower chamber 20 of the rectangular shape is installed around the semiconductor RAM 30 to block the influence of the external environment, and the thermoelectric device is coupled to the upper portion. And a mounting line is installed in the mounting machine to open and close the thermoelectric unit along the line.

The heat dissipation parts 61 and 62 are mounted at the upper end with the thermoelectric semiconductor 53 placed in a horizontal form in the thermoelectric part, and the heat exchange part 52 is coupled to the lower end. The heat dissipation fan 62 is installed on one side of the heat dissipation unit to discharge the heat generation amount of the thermoelectric semiconductor 53 in one direction, and the lower chamber of the heat dissipation unit is provided with an upper chamber 10 formed of a rectangular partition wall, and the lower part of the mounting unit. It is combined with the chamber 20 to make the evaluation environment of the semiconductor RAM into a closed structure. At this time, the inside of the sealed chamber is wrapped with a heat insulating material to block the heat loss to the outside. Between the heat dissipating part and the heat exchange part of the thermoelectric part, the heat insulating material 55 is filled with the heat insulating material 55 corresponding to the height of the thermoelectric semiconductor 53 and the metal block 54, and both sides of the thermoelectric part chamber can be connected to the line of the mounting machine. Coupling frame is installed. A blower fan 51 is installed at the lower end of the heat exchanger unit 52 of the thermoelectric unit to supply cold air and heat from the heat exchanger unit 52 to the semiconductor ram, and the air passing through the semiconductor ram is installed at both sides of the hermetic chamber 57. ) Is supplied back to the heat exchanger to circulate. Therefore, when the thermoelectric device having the horizontal structure described with reference to FIG. 7 is used, a plurality of thermoelectric devices may be stacked to improve the efficiency in space by reducing the height of the thermoelectric device.

As described above, the contents of the present invention described through the specific embodiments of the present invention have been described focusing only on the contents specific to the present invention, without the description of the general configuration of the temperature control evaluation device of the semiconductor RAM, but the present invention described above It is apparent that the present invention is not limited to the embodiments and can be modified by those skilled in the art within the technical spirit to which the present invention pertains.

1 is a front view of a semiconductor RAM evaluation apparatus equipped with a vertical thermoelectric device according to the present invention.

2 is a side view of a semiconductor RAM evaluation device equipped with a vertical thermoelectric device according to the present invention.

3 is a top view of a semiconductor RAM evaluation device equipped with a vertical thermoelectric device according to the present invention.

4 is a front view of a vertical thermoelectric device in which a dehumidifying part is installed in the evaluation device for a semiconductor RAM according to the present invention.

5 is a front view of the dehumidifying unit using the metal sphere of the layered form in the form of the dehumidifying unit according to the present invention.

6 is a front view of a dehumidifying unit using a thermoelectric semiconductor in the form of a dehumidifying unit according to the present invention.

7 is a front view of a semiconductor RAM evaluation apparatus equipped with a horizontal thermoelectric device according to the present invention.

Claims (5)

In the evaluation device of a semiconductor RAM, A heat exchanger disposed in a direction perpendicular to the semiconductor ram and bonded to one surface of the thermoelectric semiconductor to cool and heat air in the chamber; The thermoelectric device is connected to the other surface of the thermoelectric semiconductor and is composed of a heat dissipation unit for discharging the calorific value of the thermoelectric semiconductor. An insulation chamber installed outside the thermoelectric unit and separating the external environment from the thermoelectric unit; An apparatus for evaluating a temperature of a semiconductor ram having an enclosed circulation structure consisting of an inner partition structure surrounding a heat dissipation part to separate a heat dissipation part of a thermoelectric device part in an insulated chamber. The method of claim 1, Temperature of the semiconductor RAM having a sealed circulation structure in which both sides of the thermoelectric device are additionally installed with a dehumidifying part using an absorbent so as to be located on the path of the circulating air to remove moisture of the air circulated in the sealed chamber. Evaluation device. The method of claim 1, Both sides of the thermoelectric device have a plurality of layered structures therein so as to be located on a path of the circulating air for removing moisture of air circulated in the closed chamber, and each layer is inclined outwardly. And each layer is filled with a plurality of metal spheres, and a temperature evaluation device for a semiconductor ram having a closed circulation structure in which a dehumidifying part for removing moisture in the circulation air is additionally installed. The method of claim 1, Dehumidification by the dew point control method consisting of a thermoelectric semiconductor, a heat dissipation part and a condensation part inside the thermoelectric device part so as to be located on the path of the circulating air to remove moisture of the air circulated in the closed chamber An apparatus for evaluating the temperature of a semiconductor ram having a hermetic circulation structure additionally installed. In the evaluation device of a semiconductor RAM, A heat exchanger disposed in a horizontal direction with the semiconductor ram and bonded to one surface of the thermoelectric semiconductor to cool and heat air in the chamber; The thermoelectric device is connected to the other surface of the thermoelectric semiconductor and is composed of a heat dissipation unit for discharging the calorific value of the thermoelectric semiconductor to control the temperature of the semiconductor RAM. An insulation chamber installed outside the thermoelectric unit and separating the external environment from the thermoelectric unit; An apparatus for evaluating a temperature of a semiconductor ram having a closed circulation structure made of a metal structure installed surrounding a heat dissipation part to separate a heat dissipation part of a thermoelectric device part separately from an insulating chamber.

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