KR101034468B1 - X-ray detector and method of manufacturing the same - Google Patents

Abstract

Disclosed are an X-ray detector capable of stably attaching a scintillator and a method of manufacturing the same. The x-ray detector includes a photoelectric conversion substrate, a sealing member, an adhesive layer, and a scintillator. The photoelectric conversion substrate includes a thin film transistor portion, a photoelectric conversion region in which the photoelectric conversion portion is formed, and a pad region in which a pad is formed and surrounds the photoelectric conversion region. The sealing member is formed in at least one or more layers so as to surround the photoelectric conversion region between the photoelectric conversion region and the pad region. The adhesive layer is formed on top of the photoelectric conversion region surrounded by the sealing member. The scintillator is attached to the photoelectric conversion substrate by an adhesive layer, and converts X-rays incident from the outside into light absorbed by the photoelectric conversion unit. Therefore, the adhesive layer can be formed in a uniform thickness only in a necessary area, and the scintillator can be stably attached to the photoelectric conversion substrate.

Description

X-ray detector and its manufacturing method {X-RAY DETECTOR AND METHOD OF MANUFACTURING THE SAME}

The present invention relates to an X-ray detector and a method of manufacturing the same, and more particularly, to an X-ray detector and a method of manufacturing the same used to detect an image taken of the subject by X-ray.

Diagnostic x-ray examination methods widely used in the prior art had to take a film using an X-ray detection film, and the predetermined film printing process to know the result. In recent years, however, with the development of semiconductor technology, digital x-ray detectors using thin film transistors and photoelectric conversion devices have been developed.

The digital x-ray detector includes a photoelectric conversion substrate, and a plurality of thin film transistors and photoelectric conversion elements are arranged in a matrix form on the photoelectric conversion substrate. In this case, the photoelectric conversion element may be formed of, for example, a photo diode or a charge coupled device (CCD) including a p-type semiconductor layer, an intrinsic semiconductor layer, and an n-type semiconductor layer. On the other hand, a scintillator for converting X-rays into visible light is formed on the photoelectric conversion substrate.

The X-ray detector having the photoelectric conversion substrate converts the X-ray irradiated from the outside into visible light in the scintillator layer, and transmits the electrons generated in the photoelectric conversion element by the visible light to the outside by applying a bias voltage to the external signal. The analog electric signal, which appears differently for each pixel, is converted into a digital electric signal through an AD converter, and finally a digital image is displayed on the display device.

On the other hand, as a method of forming the scintillator on the photoelectric conversion substrate, a method of attaching a scintillator in the form of a film onto the photoelectric conversion substrate using an adhesive, a method of directly depositing the scintillator on the photoelectric conversion substrate, etc. Can be mentioned.

However, when attaching a scintillator in the form of a film on the photoelectric conversion substrate by using the adhesive, there is a problem that it is difficult to apply the adhesive in a uniform thickness only to the photoelectric conversion region except for the pad region of the photoelectric conversion substrate.

Accordingly, the present invention has been made in view of such a problem, and the present invention provides an X-ray detector capable of stably attaching a scintillator to a photoelectric conversion substrate by forming an adhesive layer in a uniform thickness only in a required area.

The present invention also provides a method of manufacturing the above-described X-ray detector.

An X-ray detector according to an aspect of the present invention includes a photoelectric conversion substrate, a sealing member, an adhesive layer, and a scintillator. The photoelectric conversion substrate includes a thin film transistor unit, a photoelectric conversion region in which the photoelectric conversion unit is formed, and a pad region in which a pad is formed to surround the photoelectric conversion region. The sealing member is formed in at least one layer between the photoelectric conversion region and the pad region to surround the photoelectric conversion region. The adhesive layer is formed on the photoelectric conversion region surrounded by the sealing member. The scintillator is attached to the photoelectric conversion substrate by the adhesive layer and converts X-rays incident from the outside into light absorbed by the photoelectric conversion unit.

The sealing member may include a first sealing part formed adjacent to the photoelectric conversion region and a second sealing part spaced apart from the first sealing part. The first sealing part may include at least one buffer part protruding in the direction of the second sealing part. The sealing member may include a thermosetting resin.

The thin film transistor unit may be formed on a gate line, a data line intersecting the gate line with a first insulating layer interposed therebetween, and a thin film formed in a pixel region surrounded by the gate line and the data line and connected to the gate line and the data line. It may include a transistor.

The photoelectric conversion unit may include a lower electrode electrically connected to a drain electrode of the thin film transistor, an n-type silicon layer formed on the lower electrode, an intrinsic silicon layer formed on the n-type silicon layer, and a p-type formed on the intrinsic silicon layer. It may include a silicon layer, and the upper electrode formed on the p-type silicon layer.

The photoelectric conversion substrate may further include a thin film transistor part, a second insulating film covering the photoelectric conversion part, and a bias line formed on the second insulating film and electrically connected to the upper electrode.

According to a method of manufacturing an X-ray detector according to an aspect of the present invention, a photoelectric conversion substrate including a photoelectric conversion region in which a thin film transistor unit and a photoelectric conversion unit are formed, and a pad region in which a pad is formed surrounds the photoelectric conversion region is formed. Thereafter, at least one or more sealing members are formed between the photoelectric conversion region and the pad region to surround the photoelectric conversion region. Subsequently, an adhesive layer is formed on the photoelectric conversion region surrounded by the sealing member, and a scintillator for converting X-rays incident from the outside into light absorbed by the photoelectric conversion unit is attached to the photoelectric conversion substrate through the adhesive layer. do.

In order to form the sealing member, a first sealing part adjacent to the photoelectric conversion region and a second sealing part may be formed on the outer side to be spaced apart from the first sealing part. In addition, when the first sealing part is formed, at least one buffer part protruding toward the second sealing part may be formed.

In order to form the adhesive layer, a liquid adhesive may be dropped into the photoelectric conversion region using a dispenser.

According to such an X-ray detector and a method of manufacturing the same, by forming an adhesive layer by dropping a liquid adhesive, the adhesive layer can be stably attached to the photoelectric conversion substrate by forming an adhesive layer with a uniform thickness only in a required area. Further, by forming two or more sealing members for sealing the adhesive layer and forming a buffer part as necessary, the adhesion between the photoelectric conversion substrate and the gap between the photoelectric conversion substrate and the scintillator can be prevented.

The above-described features and effects of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, and thus, those skilled in the art to which the present invention pertains may easily implement the technical idea of the present invention. Could be. The present invention is not limited to the following embodiments and may be implemented in other forms. The embodiments introduced herein are provided to make the disclosure more complete and to fully convey the spirit and features of the present invention to those skilled in the art. In the drawings, the thickness of each device or film (layer) and regions has been exaggerated for clarity of the invention, and each device may have a variety of additional devices not described herein. When (layer) is mentioned as being located on another film (layer) or substrate, an additional film (layer) may be formed directly on or between the other film (layer) or substrate.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a plan view illustrating an x-ray detector according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line II ′ of FIG. 1.

1 and 2, the X-ray detector 100 according to the exemplary embodiment of the present invention includes a photoelectric conversion substrate 200, a sealing member 300, an adhesive layer 400, and a scintillator 500.

The photoelectric conversion substrate 200 includes a thin film transistor unit 220 and a photoelectric conversion unit 230 formed on a transparent and insulating substrate 210 such as glass or plastic.

The photoelectric converter 230 is formed in each of pixel regions formed in a matrix form. The photoelectric conversion unit 230 is a portion in which X-rays incident from the outside absorb light converted by the scintillator 500 and convert the light into electrical energy. For example, the photoelectric converter 230 may be formed of a photo diode or a CCD.

The thin film transistor unit 220 is a portion for sequentially outputting the electrical energy generated by the photoelectric conversion unit 230 to an external circuit, and includes, for example, a switching element such as a thin film transistor.

The photoelectric conversion substrate 200 includes a photoelectric conversion region TR in which the thin film transistor unit 220 and the photoelectric conversion unit 230 are formed, and a pad region PR in which the pad 110 is formed and surrounds the photoelectric conversion region TR. Are distinguished.

The pad 110 formed in the pad region PR is a portion connected to an external driving circuit and is connected to the gate line and the data line formed in the photoelectric conversion region TR on the photoelectric conversion substrate 200.

The sealing member 300 is formed in at least one or more layers so as to surround the photoelectric conversion region TR between the photoelectric conversion region TR and the pad region PR. The sealing member 300 seals the adhesive layer 400 so that the adhesive layer 400 formed on the photoelectric conversion region TR does not leak out. The sealing member 300 may include a material mainly containing a thermosetting resin or a photocurable resin such as an acrylic resin, an epoxy resin, an acrylic-epoxy resin, and a phenol resin, and may further include a photo initiator, a filler, and various additives. have. For example, the sealing member 300 may be formed of a thermosetting resin of 780P-45S (product name) manufactured by Kyonitsu.

The sealing member 300 may be formed in two or more layers in order to enhance adhesion to the photoelectric conversion substrate 200 and to prevent the sealing member 300 from being separated from the photoelectric conversion substrate 200. For example, as illustrated, the sealing member 300 is formed to be adjacent to the photoelectric conversion region TR to substantially seal the adhesive layer 400 and the first sealing portion 310. The second sealing unit 320 may be spaced apart from each other at regular intervals and formed on the outer side of the first sealing unit 310. As such, by forming the first sealing part 310 and the second sealing part 320, the adhesion between the photoelectric conversion substrate 200 and the sealing member 300 is enhanced to prevent the adhesive layer 400 from leaking out. In addition, the gap between the photoelectric conversion substrate 200 and the scintillator 500 may be prevented by bubbles formed in the sealing member 300 by complementing the two-ply sealing members 300.

The adhesive layer 400 is for attaching the scintillator 500 to the photoelectric conversion substrate 200, and is formed on the photoelectric conversion region TR surrounded by the sealing member 300 and formed on the sealing member 400. Is sealed by. The adhesive layer 400 is made of a liquid adhesive having a transparent and suitable viscosity, and is formed up to the same height as the sealing member 300. The adhesive layer 400 may be formed of, for example, a silicon-based material, and in particular, may be formed of the Shinetsu product name KJR 9010 series. The adhesive layer 400 may be formed on the photoelectric conversion substrate 200 through a dropping method using a dispenser.

The scintillator 500 has a flat plate shape and is attached to the photoelectric conversion substrate 200 by the adhesive layer 400. The scintillator 500 converts the X-rays generated from the X-ray source (not shown) and transmitted through the subject into light of a wavelength band that can be absorbed by the photoelectric converter 230, for example, light of a green wavelength band. To this end, the scintillator 500 may include a halogen compound such as cesium iodide (CsI) or an oxide compound such as gadolinium sulfur oxide (GOS). The scintillator 500 may be formed to have a size enough to cover the sealing member 300 while exposing the pad 110 formed in the pad region PR.

3 is a view showing another embodiment of a sealing member.

Referring to FIG. 3, the first sealing part 310 may include at least one buffer part protruding in the direction of the second sealing part 320, that is, outward of the photoelectric conversion region TR in which the adhesive layer 400 is formed. 312).

When a large amount of adhesive is dropped in the dropping of the liquid adhesive to form the adhesive layer 400, when the scintillator 500 is attached, a certain amount of the adhesive is accommodated in the buffer part 312. Non-uniform spacing between the conversion substrate 200 and the scintillator 500 can be prevented. To this end, the buffer unit 312 may be formed at various positions such as one surface of the first sealing unit 310 having four surfaces or both surfaces facing each other.

4 is an enlarged plan view of one pixel region of the photoelectric conversion region illustrated in FIG. 1, and FIG. 5 is a cross-sectional view taken along the line II-II ′ of FIG. 4.

4 and 5, a thin film transistor unit 220 and a photoelectric converter 230 are formed in the photoelectric conversion region TR of the photoelectric conversion substrate 200.

The thin film transistor unit 220 may include a gate line 221, a data line 222, and a thin film transistor 223.

The gate line 221 is formed on the substrate 210. For example, the gate line 221 extends in the horizontal direction to define the upper side and the lower side of the pixel area.

The data line 222 is formed to cross the gate line 221 with the first insulating layer 224 therebetween. For example, the data line 222 extends in the vertical direction to define left and right sides of the pixel area.

The thin film transistor 223 is formed in the pixel area surrounded by the gate line 221 and the data line 222 and is electrically connected to the gate line 221 and the data line 222.

The thin film transistor 223 is connected to the gate electrode 223a connected to the gate line 221 and the active layer 225 and the data line 222 formed to overlap the gate electrode 223a on the first insulating layer 224. The source electrode 223b may extend to the upper portion of the active layer 225, and the drain electrode 223c may be spaced apart from the source electrode 223b on the active layer 225.

The gate electrode 223a constitutes a gate terminal of the thin film transistor 223. The gate electrode 223a may be formed from the same metal layer as the gate line 221.

The first insulating layer 224 is formed on the substrate 210 to cover the gate line 221 and the gate electrode 223a. The first insulating layer 224 is an insulating layer for protecting and insulating the gate line 221 and the gate electrode 223a. For example, the first insulating layer 224 is formed of silicon nitride (SiNx), silicon oxide (SiOx), or the like.

The active layer 225 is formed to overlap at least a portion of the gate electrode 223a on the first insulating layer 224. The active layer 225 may include a semiconductor layer 225a formed on the first insulating layer 224 and an ohmic contact layer 225b formed on the semiconductor layer 225a. The semiconductor layer 225a is a layer that forms a channel through which a current flows in the thin film transistor 223, and is formed of, for example, amorphous silicon. The ohmic contact layer 225b is formed between the semiconductor layer 225a and the source electrode 223b and the drain electrode 223c. The ohmic contact layer 225b is a layer for reducing contact resistance between the semiconductor layer 225a, the source electrode 223b, and the drain electrode 223c, and is formed of amorphous silicon doped with a high concentration of n-type impurities. The semiconductor layer 225a and the ohmic contact layer 225b may be formed of microcrystalline silicon instead of amorphous silicon.

The source electrode 223b and the drain electrode 223c are formed on the active layer 225 to be spaced apart from each other with the channel region of the thin film transistor 223 interposed therebetween. The source electrode 223b is connected to the data line 222 to form a source terminal of the thin film transistor 223, and the drain electrode 223c is connected to the photoelectric converter 230 to form a drain terminal of the thin film transistor 223. Configure. The source electrode 223b and the drain electrode 223c may be formed from the same metal layer as the data line 222.

The photoelectric converter 230 is formed in the pixel area surrounded by the gate line 221 and the data line 222. The photoelectric converter 230 is formed over the entire pixel region except for the region where the thin film transistor 223 is formed.

The photoelectric conversion unit 230 is an intrinsic formed on the n-type silicon layer 232 and the n-type silicon layer 232 formed on the lower electrode 231, the lower electrode 231 electrically connected to the thin film transistor 223. The silicon layer 233, the p-type silicon layer 234 formed on the intrinsic silicon layer 233, and the upper electrode 235 formed on the p-type silicon layer 234 are included. That is, the photoelectric converter 230 may include a fin in which the lower electrode 231, the n-type silicon layer 232, the intrinsic silicon layer 233, the p-type silicon layer 234, and the upper electrode 235 are sequentially stacked. pin) diode structure.

The lower electrode 231 is electrically connected to the drain electrode 223c of the thin film transistor 223. The lower electrode 231 is formed from the same metal layer as the drain electrode 223c, for example. Alternatively, the lower electrode 231 may be formed of a transparent conductive film such as ITO, and part of the lower electrode 231 may be electrically connected to the drain electrode 223c.

The n-type silicon layer 232 is formed on the lower electrode 231. The n-type silicon layer 232 may be formed of a silicon material doped with n-type impurities such as phosphorus (P), arsenic (As), and antimony (Sb). The n-type silicon layer 232 may be formed of amorphous silicon or microcrystalline silicon.

The intrinsic silicon layer 233 is formed on the n-type silicon layer 232. The intrinsic silicon layer 233 may be formed of a silicon material containing no impurities. For example, the intrinsic silicon layer 233 may be formed of amorphous silicon or microcrystalline silicon.

The p-type silicon layer 234 is formed on the intrinsic silicon layer 233. The p-type silicon layer 234 may be formed of a silicon material doped with p-type impurities such as boron (B) and potassium (K). The p-type silicon layer 234 may be formed of amorphous silicon or microcrystalline silicon.

The upper electrode 235 is formed on the p-type silicon layer 234. The upper electrode 235 is formed of a transparent conductive material so that light can pass therethrough. For example, the upper electrode 235 may be formed of tin oxide, zinc oxide, indium tin oxide, indium zinc oxide, or the like.

The photoelectric conversion substrate 200 may further include a second insulating film 240 covering the thin film transistor unit 220 and the photoelectric conversion unit 230 and a bias line 250 formed on the second insulating film 240. Can be.

The second insulating layer 240 is an insulating layer for protecting and insulating the thin film transistor unit 220 and the photoelectric conversion unit 230. For example, the second insulating layer 240 may be formed of silicon nitride (SiNx) or silicon oxide (SiOx). have.

The bias line 250 is for applying a reverse bias to the photoelectric converter 230, and is formed to extend in the same direction as the data line 222, for example. The bias line 250 is electrically connected to the upper electrode 235 of the photoelectric converter 230 through the contact hole CNT formed in the second insulating layer 240.

The bias line 250 may be formed to overlap at least a portion of the data line 222 in order to increase the aperture ratio of the photoelectric converter 230, and to prevent light from flowing into the thin film transistor 223. 223 may be formed to cover.

The photoelectric conversion substrate 200 may further include a passivation layer 260 formed on the surface of the photoelectric conversion substrate 200 on which the bias line 250 is formed. The protective film 110 is a film for protecting the surface of the photoelectric conversion substrate 200 and may be formed of an organic material such as polyimide or an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx). have.

Although not shown, an organic layer for planarizing the photoelectric conversion substrate 200 may be further formed on the second insulating layer 240. The organic layer is formed to a thickness thicker than that of the second insulating layer 240 to planarize the surface of the photoelectric conversion substrate 200 and to increase the separation distance between the bias line 250 and the data line 222 to increase the parasitic capacitor. Can be reduced.

The X-ray detector 100 having such a configuration converts light into an electrical signal by transferring electrons generated in the photoelectric conversion unit 230 to the outside by applying a bias voltage by X-rays radiated from the outside. More specifically, the X-rays emitted from the X-ray source are converted into visible light in the scintillator 500 formed on the photoelectric conversion substrate 200 after passing through the subject. When the light converted by the scintillator 500 enters the intrinsic silicon layer 233 of the photoelectric converter 230, silicon (Si) is dissociated and decomposed into electrons and holes. In this dissociated state, when a bias is applied to the upper electrode 235 formed on the p-type silicon layer 234 at a negative voltage, electrons are moved toward the n-type silicon layer 232. Electrons moved to the n-type silicon layer 232 are accumulated on the drain electrode 223c side of the thin film transistor 223, and the electric charges stored on the drain electrode 223c side are thus turned on by the turn-on of the thin film transistor 223. Read out along line 222. In this manner, the signal read out for each pixel is an analog signal in units of photocurrent. The read analog signals are displayed differently according to the amount of light incident on each pixel unit. That is, the X-rays penetrating the subject appear differently on the X-ray intensity incident to the scintillator layer 120 according to the density of the subject. Therefore, the analog signal, which appears differently for each pixel, is digitized through the AD converter to finally implement a digital image on the monitor.

6 is a flowchart illustrating a method of manufacturing an x-ray detector according to an exemplary embodiment of the present invention.

2 and 6, in order to manufacture the X-ray detector 100, first, the photoelectric conversion region TR and the photoelectric conversion region TR on which the thin film transistor unit 220 and the photoelectric conversion unit 230 are formed are first described. The photoelectric conversion substrate 200 including the pad region PR having the pad 110 formed thereon is formed (S10).

An embodiment of a method of forming the photoelectric conversion substrate 200 will be described with reference to FIGS. 3 and 4.

First, in order to form the thin film transistor unit 220, a gate line including a gate line 221 and a gate electrode 223a electrically connected to the gate line 221 is formed on the substrate 210. The gate wiring may be formed by depositing a gate metal film on the substrate 210 through sputtering or the like, and then patterning the gate metal film through a photolithography process using an exposure mask. The gate wiring is, for example, aluminum (Al), molybdenum (Mo), chromium (Cr), neodymium (Nd), tantalum (Ta), titanium (Ti), tungsten (W), copper (Cu), silver ( Ag) or a single metal or an alloy thereof. In addition, the gate wiring may be formed in a multilayer structure in which the single metal or the alloy is stacked in a plurality of layers.

Thereafter, a first insulating layer 224 is formed on the substrate 210 on which the gate wiring is formed. The first insulating layer 224 is an insulating layer for insulating and protecting the gate wiring, and may be formed of, for example, silicon nitride (SiNx) or silicon oxide (SiOx).

Thereafter, the active layer 225 is formed on the first insulating layer 224 to overlap the gate electrode 223a. A semiconductor thin film for forming the semiconductor layer 225a and an ohmic contact thin film for forming the ohmic contact layer 225b are formed on the first insulating layer 224, and then patterned to form the semiconductor layer 225a and the ohmic contact layer. An active layer 225 including 225b is formed.

Thereafter, the source electrode 223b connected to the data line 222 and the data line 222 and extending to the upper portion of the active layer 225 on the first insulating layer 224 and the source electrode on the active layer 225. A data line is formed to include a drain electrode 223c spaced apart from 223b and connected to the lower electrode 231. The data line may be formed by depositing a data metal film on the substrate 210 on which the active layer 225 is formed by sputtering or the like, and then patterning the data metal film through a photolithography process using an exposure mask. For example, the data line may include aluminum (Al), molybdenum (Mo), chromium (Cr), neodymium (Nd), tantalum (Ta), titanium (Ti), tungsten (W), copper (Cu), and silver ( Ag) or a single metal or an alloy thereof. In addition, the data line may be formed in a multilayer structure in which the single metal or alloy is stacked in a plurality of layers.

Meanwhile, by using a slit mask or a halftone mask to pattern the data wires, the active layer 225 can be simultaneously patterned together with the data wires using one mask.

Thereafter, the ohmic contact layer 225b of the channel region corresponding to the source electrode 223b and the drain electrode 223c is removed to expose the semiconductor layer 225a of the channel region.

Meanwhile, after the thin film transistor unit 220 is formed, the photoelectric converter 230 connected to the drain electrode 223c of the thin film transistor 223 is formed.

In order to form the photoelectric converter 230, a lower electrode 231 electrically connected to the drain electrode 223c is formed. The lower electrode 231 of the photoelectric converter 230 may be formed from the same metal layer as the drain electrode 223c. That is, when patterning the data metal layer for forming the data line, the lower electrode 231 connected to the drain electrode 223c may be simultaneously formed. Alternatively, the lower electrode 231 may be formed of a transparent conductive film such as ITO so as to be electrically connected to the drain electrode 223c before or after the drain electrode 223c is formed.

Thereafter, the n-type silicon layer 232, the intrinsic silicon layer 233, and the p-type silicon layer 234 are sequentially formed on the lower electrode 231. The intrinsic silicon layer 233 may be formed of amorphous silicon or microcrystalline silicon. The n-type silicon layer 232, the intrinsic silicon layer 233, and the p-type silicon layer 234 may be formed through a plasma chemical vapor deposition (PE-CVD) process.

Thereafter, an upper electrode 235 is formed on the p-type silicon layer 234. The upper electrode 235 may be formed by forming a transparent conductive film made of a transparent conductive material on the substrate 210 on which the p-type silicon layer 234 is formed, and then patterning the transparent conductive film.

Thereafter, the second insulating layer 240 is formed on the substrate 210 on which the photoelectric converter 230 is formed to cover the thin film transistor unit 220 and the photoelectric converter 230. The second insulating layer 240 is an insulating layer for protecting and insulating the thin film transistor unit 220 and the photoelectric conversion unit 230. For example, the second insulating layer 240 may be formed of silicon nitride (SiNx) or silicon oxide (SiOx). Can be. A contact hole CNT exposing a portion of the upper electrode 235 is formed in the second insulating layer 240. Meanwhile, an organic layer (not shown) may be further formed on the second insulating layer 240. The organic layer is formed to a thickness thicker than that of the second insulating layer 240 in order to planarize the photoelectric conversion substrate 200 and reduce the parasitic capacitor.

Thereafter, a bias line 250 is formed on the second insulating layer 240 to be electrically connected to the photoelectric converter 230. The bias line 250 is for applying a reverse bias to the photoelectric converter 230, and the upper electrode 235 of the photoelectric converter 230 through the contact hole CNT formed in the second insulating layer 240. Electrically connected.

The bias line 250 may be formed to overlap at least a portion of the data line 222 in order to increase the aperture ratio of the photoelectric converter 230, and to prevent light from flowing into the thin film transistor 223. 223 may be formed to cover.

Thereafter, the passivation layer 260 is formed on the surface of the photoelectric conversion substrate 200 on which the bias line 250 is formed. The protective film 260 is a film for protecting the surface of the photoelectric conversion substrate 200 and may be formed of an organic material such as polyimide, or an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx). have.

Referring to FIGS. 2 and 6 again, after the photoelectric conversion substrate 200 is formed, at least one or more sealing members may surround the photoelectric conversion region TR between the photoelectric conversion region TR and the pad region PR. To form 300 (S20).

The sealing member 300 may include a material mainly containing a thermosetting or photocurable resin such as an acrylic resin, an epoxy resin, an acryl-epoxy resin, and a phenol resin, and may further include a photoinitiator, a filler, and various additives. . For example, the sealing member 300 may use Kyonitsu Corporation's 780P-45S (product name) thermosetting resin.

The sealing member 300 may be formed in two or more layers in order to enhance adhesion to the photoelectric conversion substrate 200 and to prevent the sealing member 300 from being separated from the photoelectric conversion substrate 200. To this end, the first sealing portion 310 formed adjacent to the photoelectric conversion region TR and substantially spaced apart from the first sealing portion 310 and the first sealing portion 310 at a predetermined interval to seal the adhesive layer 400. The sealing member 300 may be formed in two layers so as to include the second sealing portion 320 formed at the outer side of the bottom surface. As such, by forming the sealing member 300 to include the first sealing part 310 and the second sealing part 320, the two-ply sealing members 300 are complementary to each other and are formed in the sealing member 300. Uneven spaces between the photoelectric conversion substrate 200 and the scintillator 500 can be prevented by bubbles.

Meanwhile, when forming the first sealing unit 310, as shown in FIG. 3, at least one buffer unit 312 protruding toward the second sealing unit 320 may be formed.

Thereafter, the adhesive layer 400 is formed on the photoelectric conversion region TR surrounded by the sealing member 300 (S30).

7 is a view showing a process of forming an adhesive layer according to an embodiment of the present invention.

Referring to FIG. 7, a liquid adhesive 420 is dropped by using a dispenser 410 on the photoelectric conversion substrate 200 on which the sealing member 300 is formed. The adhesive 420 may be formed of a liquid silicone-based material having a transparent and suitable viscosity. For example, the adhesive 420 may use the product name KJR 9010 series from Shinnetsu.

Thereafter, the flat scintillator 500 is attached to the photoelectric conversion substrate 200 through the adhesive layer 400 (S40). The scintillator 500 converts the X-rays generated from the X-ray source (not shown) and transmitted through the subject into light of a wavelength band that can be absorbed by the photoelectric converter 230, for example, light of a green wavelength band. To this end, the scintillator 500 may include a halogen compound such as cesium iodide (CsI) or an oxide compound such as gadolinium sulfur oxide (GOS). The scintillator 500 is attached to cover the sealing member 300 while exposing the pad 110 formed in the pad region PR.

The liquid adhesive 420 dropped on the photoelectric conversion region TR is uniformly spread by the attachment of the scintillator 500. If the amount of the adhesive 420 dropped is greater than a predetermined amount, the first sealing part Since a certain amount of the adhesive 420 is accommodated in the buffer portion 312 formed in the 310, the gap between the photoelectric conversion substrate 200 and the scintillator 500 may be prevented from being uneven.

According to the X-ray detector as described above and a method for manufacturing the same, by forming the adhesive layer by dropping the liquid adhesive, it is possible to form the adhesive layer in a uniform thickness only in the required area, and stably attach the scintillator to the photoelectric conversion substrate. . Further, by forming two or more sealing members for sealing the adhesive layer and forming a buffer part as necessary, the adhesion between the photoelectric conversion substrate and the gap between the photoelectric conversion substrate and the scintillator can be prevented.

In the detailed description of the present invention described above with reference to preferred embodiments of the present invention, those skilled in the art or those skilled in the art having ordinary skill in the art will be described later in the claims and the spirit of the present invention It will be appreciated that various modifications and variations can be made in the present invention without departing from the scope of the art.

1 is a plan view illustrating an x-ray detector according to an exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II ′ of FIG. 1.

3 is a view showing another embodiment of a sealing member.

4 is an enlarged plan view of one pixel region of the photoelectric conversion region illustrated in FIG. 1.

FIG. 5 is a cross-sectional view taken along the line II-II 'of FIG. 4.

6 is a flowchart illustrating a method of manufacturing an x-ray detector according to an exemplary embodiment of the present invention.

7 is a view showing a process of forming an adhesive layer according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100: x-ray detector 110: pad

200: photoelectric conversion substrate 220: thin film transistor portion

230: photoelectric conversion unit 300: sealing member

310: first sealing part 312: buffer part

320: second sealing portion 400: adhesive layer

500: scintillator

Claims (14)

A photoelectric conversion substrate including a photoelectric conversion region in which a thin film transistor unit and a photoelectric conversion unit are formed, and a pad region surrounding the photoelectric conversion region and in which a pad is formed; A sealing member formed in at least one layer between the photoelectric conversion region and the pad region to surround the photoelectric conversion region; An adhesive layer formed on the photoelectric conversion region surrounded by the sealing member; And A scintillator attached to the photoelectric conversion substrate by the adhesive layer and converting X-rays incident from the outside into light absorbed by the photoelectric conversion unit; The sealing member A first sealing part formed adjacent to the photoelectric conversion region; And A second sealing part spaced apart from the first sealing part and formed at an outer side thereof; And the first sealing part includes at least one buffer part protruding in the direction of the second sealing part. delete delete The method of claim 1, The sealing member is an x-ray detector, characterized in that it comprises a thermosetting resin or photocurable resin. The method of claim 1, wherein the thin film transistor unit, Gate lines; A data line crossing the gate line with a first insulating layer interposed therebetween; And And a thin film transistor formed in the pixel area surrounded by the gate line and the data line and connected to the gate line and the data line. The method of claim 5, wherein the photoelectric conversion unit, A lower electrode electrically connected to the drain electrode of the thin film transistor; An n-type silicon layer formed on the lower electrode; An intrinsic silicon layer formed on the n-type silicon layer; A p-type silicon layer formed on the intrinsic silicon layer; And And an upper electrode formed on the p-type silicon layer. The photoelectric conversion substrate of claim 6, A second insulating film covering the thin film transistor unit and the photoelectric conversion unit; And And a bias line formed on the second insulating layer and electrically connected to the upper electrode. Forming a photoelectric conversion substrate including a photoelectric conversion region in which a thin film transistor unit and a photoelectric conversion unit are formed, and a pad region in which a pad is formed and surrounds the photoelectric conversion region; Forming at least one or more sealing members between the photoelectric conversion region and the pad region to surround the photoelectric conversion region; Forming an adhesive layer on the photoelectric conversion region surrounded by the sealing member; And Attaching a scintillator for converting X-rays incident from the outside into light absorbed by the photoelectric conversion unit to the photoelectric conversion substrate through the adhesive layer; Forming the sealing member, Forming a first sealing portion adjacent to the photoelectric conversion region; And Forming a second sealing part on an outer side of the first sealing part so as to be spaced apart from the first sealing part, Forming the first sealing portion, And forming at least one buffer portion protruding in the direction of the second sealing portion. delete delete The method of claim 8, wherein the forming of the adhesive layer, And dropping a liquid adhesive into the photoelectric conversion region using a dispenser. The method of claim 8, wherein the forming of the photoelectric conversion substrate is performed. Forming the thin film transistor unit including a gate line, a data line crossing the gate line with a first insulating layer interposed therebetween, and a thin film transistor connected to the gate line and the data line; And And forming the photoelectric conversion part electrically connected to the thin film transistor in a pixel region surrounded by the gate line and the data line. The method of claim 12, wherein the forming of the photoelectric conversion unit, Forming a lower electrode electrically connected to a drain electrode of the thin film transistor; Forming an n-type silicon layer on the lower electrode; Forming an intrinsic silicon layer on the n-type silicon layer; Forming a p-type silicon layer on the intrinsic silicon layer; And forming an upper electrode on the p-type silicon layer. The method of claim 13, wherein the forming of the photoelectric conversion substrate is performed by: Forming a second insulating film covering the thin film transistor unit and the photoelectric conversion unit; And And forming a bias line electrically connected to the upper electrode on the second insulating layer.

Images