KR101027002B1 - Electronic component and electronic apparatus using this electronic component - Google Patents

Abstract

An object of the present invention is to improve temperature characteristics and electrical characteristics with respect to electronic components. And in order to achieve the said objective, the electronic component of this invention covers the board | substrate 1, the comb-shaped electrode 2 provided in the upper surface of the board | substrate 1, and the comb-shaped electrode 2, and also has an upper surface. Has a protective film 4 having an uneven shape. L for the pitch width per uneven | corrugated shape of the protective film 4, L1 for the width | variety of the convex part 4a of the uneven | corrugated shape per uneven | corrugated shape of the protective film 4, L2, and the width of the concave part 4b. When the pitch width per pitch of the type electrode 2 is p, the width per electrode finger constituting the comb-shaped electrode 2 is p1, and the width between the electrode fingers is p2, L1≤p1, and L2≥p2 Each parameter is set so as to satisfy the relation of L 의 p, p1 + p2 = p and L1 + L2 = L.

Description

ELECTRONIC COMPONENT AND ELECTRONIC APPARATUS USING THIS ELECTRONIC COMPONENT}

The present invention relates to an electronic component and an electronic apparatus using the electronic component.

Hereinafter, a conventional electronic component will be described.

In this prior art, a surface acoustic wave device (hereinafter referred to as "SAW device") will be described as an example of an electronic component.

BACKGROUND ART In recent years, small-size and light-weight SAW devices have been used for electronic devices such as various mobile communication terminal devices. In particular, in the wireless circuit section of the mobile phone system in the 800 MHz to 2 GHz band, the angle of cutout of the lithium tantalate (hereinafter referred to as "LT") substrate is 36 degrees in the Z axis direction around the X axis. SAW filters created using a so-called 36 ° Y cut X radio wave LT (hereinafter referred to as “36 ° YLT”) substrate cut out from a Y plate which is ° have been widely used. However, depending on the use of the filter in the system of the cellular phone or its wireless circuit section, the low insertion loss of the pass band and the skirt characteristic of the filter are further increased, and the suppression degree in the stop band is further increased. High filter characteristics are required. In order to satisfy such a demand, the LT angle of the LT substrate is cut out from a Y plate whose angle of rotation in the Z axis direction around the X axis is 42 °. YLT ”) discloses a method of realizing a SAW filter with less loss and a sharper skirt characteristic of the filter than using a conventional 36 ° YLT substrate in Japanese Patent Laid-Open No. 9-167936. Is indicated.

However, since the 42 ° YLT substrate has a large coefficient of thermal expansion of the substrate in the propagation direction of the surface acoustic wave, and the elastic constant itself also varies with temperature, similar to the conventional 36 ° LT substrate, the frequency characteristic of the filter also changes with temperature. It had a problem in the temperature characteristic that it shifts greatly to about -35 ppm / degree K with respect to. For example, when the transmission filter for PCS of the United States is taken as an example, a filter having a central frequency of 1.88 kHz at room temperature fluctuates approximately ± 3.3 MHz, or approximately 6.6 MHz, at room temperature ± 50 ° C. In the case of the PCS, the interval between the transmission band and the reception band is only 20 MHz, and considering the manufacturing frequency deviation, the transmission and reception interval in the filter is substantially only about 10 MHz. For this reason, for example, when the transmission band is to be secured at all temperatures (normal temperature ± 50 ° C), there is a problem that the amount of attenuation on the receiving side does not sufficiently drop.

This invention solves the said conventional subject, Comprising: It aims at obtaining the electronic component excellent in temperature characteristic and an electrical characteristic by forming a protective film on an electrode.

In order to achieve the above object, the first aspect of the present invention is an electronic component, wherein a protective film having an uneven shape on the upper surface of the electronic component is formed from the surface of the substrate in contact with the protective film to the top of the convex portion of the protective film. The height t, the height from the surface of the substrate in contact with the protective film to the bottom of the concave portion of the protective film is t1, and the height (t-t1) from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film. t2, the pitch width per pitch of the uneven shape of the protective film is L, the width of the convex portion of the unevenness per pitch of the uneven shape of the protective film is L1, the width of the recessed part is L2, and the pitch per pitch of the comb-shaped electrode. When the width is p, the width per electrode finger constituting the comb-shaped electrode is p1, the width between the electrode fingers is p2, and the film thickness of the comb-shaped electrode is h.

t2 ≤ h

(However, the relationship of L 의 p, p1 + p2 = p, L1 + L2 = L, L1≤p1, L2≥p2 is satisfied), thereby reducing the influence of the shape of the protective film on the electrode and unnecessary reflection of SAW. As a result, even when the protective film is formed so as to cover the electrode and an uneven state exists on the surface thereof, the electronic component having good characteristics can be obtained.

A second aspect of the present invention is an electronic component, wherein a protective film having a concave-convex shape on the upper surface provided in the electronic component has a height t from the surface of the substrate in contact with the protective film to the top of the convex portion of the protective film. Let t1 be the height from the surface of the substrate in contact with the protective film to the bottom of the concave portion of the protective film, t2 to the height t-t1 from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film, The pitch width per pitch of the uneven shape of the protective film is L, the width of the convex portion of the unevenness per pitch of the uneven shape of the protective film is L1, the width of the concave part is L2, and the pitch width per pitch of the comb-shaped electrode is p, When the width per electrode finger constituting the comb-shaped electrode is p1, the width between the electrode fingers is p2, and the film thickness of the comb-type electrode is h,

h ≤ t2

(However, the relationship of L ≒ p, p1 + p2 = p, L1 + L2 = L, L1≤p1, L2≥p2 is satisfied.) Even when the protective film is formed to cover the electrode, the electrode portion and the electrode finger By providing the difference in mass along the substrate in between, it is possible to suppress or improve the decrease in the reflection coefficient of the SAW at the electrode end, and as a result, it is possible to obtain an electronic component having small size and good characteristics. .

A third aspect of the present invention is an electronic component, wherein a protective film having a substantially flat top surface provided by the electronic component has a height from the surface of the substrate in contact with the protective film to an upper surface of the protective film, and is pitched by one pitch of the comb-shaped electrode. When the pitch width is p, the substrate is a lithium tantalate substrate, and when the cutting angle of the lithium tantalate substrate is a rotation angle in the Z axis direction around the X axis, D °,

38 ° ≤ D °

It is cut out from the Y plate of

18% ≤ t / (2 × p) ≤ 35%

By doing so, it has the effect that an electronic component with little change in temperature characteristics and excellent characteristics can be obtained.

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A fourth aspect of the present invention is an electronic component, wherein a protective film having a concave-convex shape on the upper surface provided in the electronic component has a height t from the surface of the substrate in contact with the protective film to the top of the convex portion of the protective film. Let t1 be the height from the surface of the substrate in contact with the protective film to the bottom of the concave portion of the protective film, t2 to the height t-t1 from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film, The pitch width per pitch of the irregularities of the protective film is L, the width of the top of the convex portion of the irregularities per pitch of the unevenness of the protective film is L1, the width of the recess is L2, and the pitch width L and (L-L2) Ratio (L-L2) / L is η ', the height of the comb-shaped electrode h, the pitch width per pitch of the comb-shaped electrode p, the width per electrode finger constituting the comb-shaped electrode p1, The width between the electrode finger is p2, the pitch p of the comb-shaped electrode and the front When the ratio p1 / p of the paper 1 in the width p1 η,

h ≤ t2

(Where, satisfies the relationship of η'-0.3 <η≤η ', L ≒ p, p1 + p2 ≒ p, L1> p1), and the reflective surface of the SAW and the protective film recess of the physical electrode By suppressing the deviation of the physical reflection surface at the end to a certain range, even when the protective film is formed so as to cover the electrode, by providing a predetermined step or more between the top of the convex portion of the protective film and the bottom of the concave portion of the protective film It has the effect that a sufficient SAW reflection coefficient can be secured and a smaller and better electronic component can be obtained.

A fifth aspect of the present invention is an electronic component, wherein a protective film having a concave-convex shape on the upper surface provided in the electronic component has a height t from the surface of the substrate in contact with the protective film to the top of the convex portion of the protective film. Let t1 be the height from the surface of the substrate in contact with the protective film to the bottom of the concave portion of the protective film, t2 to the height t-t1 from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film, The pitch width per pitch of the uneven shape of the protective film is L, the width of the top of the convex portion of the uneven shape per pitch of the uneven shape of the protective film is L1, the width of the recess is L2, the height of the comb-shaped electrode h, and the comb teeth. When the pitch width per pitch of the type electrode is p, the width per electrode finger constituting the comb-shaped electrode is p1, and the width between the electrode fingers is p2,

h ≤ t2

(However, the relationship between L1 + L2 <L, L2 <p2, L1 ≦ p1, L ≒ p, p1 + p2 ≒ p) is satisfied, and the end of the top of the convex portion of the unevenness of the protective film and the end of the bottom of the concave portion. By gently changing the height t2 from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film, the influence on the irregularities of the protective film is alleviated, and between the electrode finger portion and the electrode finger. By providing a difference of a certain amount or more in the mass along the substrate, it is possible to secure a reflection coefficient of the SAW so that even when the protective film is formed to cover the electrode, it is possible to obtain a compact and high-performance electronic component.

A sixth aspect of the present invention is an electronic component, wherein a protective film having an uneven shape on the upper surface provided in the electronic component has a height t from the surface of the substrate in contact with the protective film to the top of the convex portion of the protective film. Let t1 be the height from the surface of the substrate in contact with the protective film to the bottom of the concave portion of the protective film and t2 to the width t-t1 from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film. The pitch width per pitch of the irregularities of the protective film is L, the width of the top of the convex portion of the irregularities per pitch of the unevenness of the protective film is L1, the width of the recess is L2, and the pitch width L and (L-L2) Ratio (L-L2) / L to η ', the height of the electrode finger h, the pitch width per pitch of the comb-shaped electrode p, the width per one electrode finger constituting the comb-shaped electrode p1, and the electrode finger Width between p2, pitch p of comb-shaped electrode and one electrode finger When the ratio p1 / p of the width p1 is η,

0 <t2 <h

(Where the relationship of η'-0.3 <η≤η ', L ≒ p, p1 + p2 ≒ p, L1> p1 is satisfied), and the reflective surface of the SAW and the protective film recess of the electrode finger cross section are satisfied. By suppressing the deviation of the physical reflective surface at the end to a certain range, and setting the degree of irregularities of the concave-convex shape of the protective film within a certain range, it is possible to suppress the influence on the propagation of the SAW of the shape of the SiO ₂ film, and the protective film Even when formed so as to cover the electrode, it has the effect that an electronic component having good performance can be obtained.

A seventh aspect of the present invention is an electronic component, wherein a protective film having an uneven shape on the upper surface provided in the electronic component has a height t from the surface of the substrate in contact with the protective film to the top of the convex portion of the protective film. The height from the surface of the substrate in contact with the protective film to the bottom of the concave portion of the protective film is t1, the width t-t1 from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film is t2. The pitch width per pitch of the uneven shape of the protective film is L, the width of the top of the convex portion of the uneven shape per pitch of the uneven shape of the protective film is L1, the width of the recess is L2, the height of the electrode finger is h, and the height of the comb-shaped electrode When the pitch width per pitch is p, the width per electrode finger constituting the comb-shaped electrode is p1, and the width between the electrode fingers is p2,

0 <t2 <h

(However, the relationship between L1 + L2 <L, L2 <p2, L1≤p1, L ≒ p, p1 + p2 ≒ p) is satisfied, and the top end of the convex and convex portions of the protective film and the bottom end of the concave portion are In the meantime, the degree of concavities and convexities of the protective film is set within a predetermined range, and the height t2 from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film is gently changed so that the effect of the concave and convexity of the protective film is given to the characteristics. Even if the protective film is formed so as to cover the electrode, it has the effect that an electronic component having good performance can be obtained.

Moreover, the 8th aspect of this invention is an electronic component, The protective film which has an uneven | corrugated shape in the upper surface provided in this electronic component has a pitch width per pitch of uneven | corrugated shape of a protective film, and per pitch of uneven | corrugated shape of the said protective film. The width of the top of the uneven convex portion is L1, the width of the concave portion is L2, and the pitch width L and the ratio (L-L2) / L of (L-L2) are η ', and the pitch width per pitch of the comb-shaped electrode is p, the width per electrode finger constituting the comb-shaped electrode is p1, the width between the electrode fingers is p2, and the ratio p1 / p of the pitch p of the comb-shaped electrode and the width p1 of the electrode finger is η. time,

η'-0.3 <η≤η '

(However, it satisfies the relationship of L ≒ p, p1 + p2 ≒ p and L1> p1), the electrode finger cross section serving as the reflective surface of the physical SAW and the protective film recessed cross section which is also the reflective surface of the physical SAW. By suppressing the misalignment of the position in a certain range, even when the protective film is formed to cover the electrode and an uneven state exists on the surface thereof, the electronic component having good characteristics can be obtained.

In addition, the ninth aspect of the present invention is an electronic component, and the protective film having an uneven shape on the upper surface provided in the electronic part has a pitch width per pitch of the uneven shape of the protective film, and a pitch of the uneven shape of the protective film. The width of the top of the convex portion of the convex and convex portions is L1, the width of the concave portion is L2, the pitch width per pitch of the comb-shaped electrode is p, the width per one of the electrode fingers constituting the comb-shaped electrode is p1, and between the electrode fingers. When the width is p2,

L1 + L2 <L, L2 <p2, and also L1≤p1

The height from the surface of the substrate to the surface of the protective film between the top of the convex portion and the end of the bottom of the concave portion in the concave-convex shape of the protective film, which satisfies the relationship between L ≒ p and p1 + p2_p. By gently changing the thickness of the protective film defined by, the influence of SAW reflection at the boundary of the unevenness of the protective film is reduced, and even when the protective film is formed so as to cover the electrode and the uneven state exists on the surface thereof, It has the effect that a surface acoustic wave device having good performance can be obtained.

 According to the present invention as described above, an electronic component having excellent temperature characteristics and electrical characteristics can be obtained by forming a protective film so as to cover an electrode formed on the substrate and setting the shape and thickness of the protective film in a specific range.

The objects, features, aspects, and advantages of the present invention will become more apparent from the following detailed description and the accompanying drawings.

Fig. 1A is a top view showing the structure of an electronic component in Example 1 of the present invention;

1B is a sectional view of an electronic component in a first embodiment of the present invention;

2 (a) to 2 (h) are views for explaining a method for manufacturing an electronic component in Example 1 of the present invention;

3 is an overview diagram of a SAW filter in Embodiment 1 of the present invention;

4 (a) is a diagram showing the electrical characteristics of a SAW resonator in a first embodiment of the present invention;

Fig. 4B is a diagram showing the electrical characteristics of the SAW filter in the first embodiment of the present invention;

Fig. 5A is a diagram showing the electrical characteristics of the SAW resonator in the first embodiment of the present invention;

Fig. 5B is a diagram showing the electrical characteristics of the SAW filter according to the first embodiment of the present invention;

Fig. 6A is a diagram showing the electrical characteristics of a SAW resonator in accordance with the first embodiment of the present invention;

6 (b) is a diagram showing the electrical characteristics of a SAW filter according to the first embodiment of the present invention;

Fig. 7 is a graph showing the relationship between the normalized film thickness of the electrode and the ripple generation frequency in the first embodiment;

8 is a diagram illustrating a configuration of a ladder type SAW filter;

9 is a sectional view of an electronic component in a second embodiment of the present invention;

10 (a) to 10 (i) show a method for manufacturing an electronic component in a second embodiment of the present invention;

11 (a) is a diagram showing the electrical characteristics of a SAW resonator in a second embodiment of the present invention;

Fig. 11B is a diagram showing the electrical characteristics of the SAW filter in the second embodiment of the present invention;

12 (a) is a diagram showing the electrical characteristics of a SAW resonator in a second embodiment of the present invention;

12 (b) is a diagram showing the electrical characteristics of a SAW filter according to the second embodiment of the present invention;

13 (a) is a diagram showing the electrical characteristics of a SAW resonator in a second embodiment of the present invention;

13 (b) is a diagram showing the electrical characteristics of a SAW filter according to the second embodiment of the present invention;

14 is a sectional view of an electronic component in a third embodiment of the present invention;

15 (a) to 15 (e) are cross-sectional SEM photographs and cross-sectional views of electronic components in Example 3 of the present invention;

Fig. 16 is a diagram showing the electrical characteristics of the electronic component in Example 3 of the present invention;

17 is a diagram showing a relationship between a structure of an electronic component and an electrical characteristic in Example 3 of the present invention;

18 (a) is a cross-sectional SEM photograph of the electronic component in Example 4 of the present invention;

18 (b) is a diagram showing the electrical characteristics of the electronic component in a fourth embodiment of the present invention;

Fig. 19A is a cross-sectional SEM photograph of an electronic component in Example 4 of the present invention.

Fig. 19B is a diagram showing the electrical characteristics of the electronic component in accordance with the fourth embodiment of the present invention;

20 is a diagram showing the electrical characteristics of the electronic component according to the fifth embodiment of the present invention;

Fig. 21 is a diagram showing the electrical characteristics of the electronic component in a sixth embodiment of the present invention;

Fig. 22 is a diagram showing the relationship between the structure of the electronic component and the electrical characteristics in the sixth embodiment of the present invention;

FIG. 23 is a diagram showing a relationship between the structure of an electronic component and a temperature characteristic in Example 6 of the present invention; FIG.

24 (a) is an overview view of an electronic apparatus according to a seventh embodiment of the present invention;

24 (b) is an electric circuit diagram of an essential part of the interior of the electronic apparatus according to the seventh embodiment of the present invention;

25 (a) is a diagram showing the electrical characteristics of the electronic apparatus according to the seventh embodiment of the present invention;

25B is a diagram showing the electrical characteristics of the electronic apparatus according to the seventh embodiment of the present invention;

Fig. 26 is a sectional view of an electronic component in a eighth embodiment of the present invention;

27 is a sectional view of an electronic component in a ninth embodiment of the present invention;

28 is a sectional view of an electronic component in a tenth embodiment of the present invention;

29 is a sectional view of an electronic component in a eleventh embodiment of the present invention;

30 is a sectional view of an electronic component in a twelfth embodiment of the present invention;

31 is a sectional view of an electronic component in a thirteenth embodiment of the present invention;

32 is a sectional view of an electronic component in a fourteenth embodiment of the present invention;

33 is a sectional view of an electronic component in a fifteenth embodiment of the present invention;

34 is a sectional view of an electronic component in a sixteenth embodiment of the present invention;

35A is a cross-sectional SEM photograph of an electronic component in an embodiment of the present invention;

FIG. 35B is an explanatory diagram showing the definition of the cross-sectional structure of an electronic component in an embodiment of the present invention. FIG.

EMBODIMENT OF THE INVENTION Hereinafter, the electronic component in the Example of this invention is demonstrated, referring drawings. In this embodiment, an SAW device is described as an example of an electronic component.

(Example 1)

Fig. 1 (a) is a top view of a SAW device as an electronic component in Embodiment 1 of the present invention, and Fig. 1 (b) is the same sectional view.

As shown in the same figure, the SAW apparatus of this Embodiment 1 is equipped with the comb-shaped electrode 2 in the upper surface of the board | substrate 1, and the reflector 3 in the both sides of this comb-shaped electrode 2, The protective film 4 which covers these comb-shaped electrode 2 and the reflector 3 at least is provided. Moreover, the comb-shaped electrode 2 has the pad 5 which takes out the electric signal electrically connected with this comb-shaped electrode 2, and comprises SAW apparatus.

The board | substrate 1 consists of lithium tantalate (it describes as "LT" hereafter) cut out from the Y board which rotated the water about the X-axis in the Z-axis direction, The 36 degree YLT board | substrate whose rotation angle is 36 degrees. to be.

The comb electrode 2 is made of aluminum (hereinafter, referred to as "Al") or an Al alloy.

The protective film 4 is preferably made of silicon dioxide (hereinafter referred to as "SiO ₂ "), and has an uneven shape on its upper surface as shown in Fig. 1B. The convex part 4a of the protective film 4 is provided above the part which has the comb-shaped electrode 2 of the upper surface of the board | substrate 1. As shown in FIG. In addition, the recessed part 4b of the protective film 4 is provided in the part in which the comb-shaped electrode 2 between the convex parts 4a does not exist in the upper surface of the board | substrate 1, and its vicinity.

Here, the height from the surface of the substrate 1 to which the protective film 4 is in contact with the top of the convex portion 4a of the protective film 4 is t, and the surface of the substrate 1 to which the protective film 4 is in contact. , The height to the bottom of the recessed portion 4b of the protective film 4 is t1, and the height t from the bottom of the recessed portion 4b of the protective film 4 to the top of the convex portion 4a. -t1) is set to t2.

Moreover, the height h of the comb-tooth shaped electrode 2 is made from the surface of the board | substrate 1 which the protective film 4 contact | connects to the top part of the electrode finger 2a.

Further, each of the convex portion 4a and the concave portion 4b of the protective film 4 is one pitch, the pitch width per pitch is L, and the width of the convex portion 4a of the protective film 4 is L1. The width of the concave portion 4b of the protective film 4 is set to L2 (where L = L1 + L2 is established). In addition, similarly to one pitch of the protective film 4, the portion of the electrode finger 2a of one comb-shaped electrode 2 and the portion of the electrode finger 2a that is adjacent to each other is positioned as one part of the comb-shaped electrode 2. The pitch width is p.

The width per electrode of the electrode finger 2a is p1, and the width between neighboring electrode fingers is p2 (p = p1 + p2 is established).

Further, the ratio L1 / L of the pitch width L of the protective film 4 and the width L1 of the convex portion 4a of the protective film 4 is η ', and the pitch pitch 1 of the comb-shaped electrode 2 and the width of each electrode finger. Let ratio p1 / p of p1 be (eta).

The SAW device configured as described above will be described below with reference to the drawings.

FIG.2 (a)-FIG.2 (h) are figures explaining the manufacturing method of the SAW apparatus in Example 1 of this invention.

First, as shown in Fig. 2A, an electrode film 22 serving as a comb-shaped electrode or / and a reflector is formed on the upper surface of the LT substrate 21 by deposition or sputtering of Al or Al alloy. do.

Next, as shown in FIG. 2B, a resist film 23 is formed on the upper surface of the electrode film 22.

Next, as shown in Fig. 2C, the resist film 23 is processed by using an exposure, development technique, or the like so as to have a desired shape.

Next, as shown in Fig. 2 (d), after the electrode film 22 is processed into a desired shape such as a comb-shaped electrode or a reflector using a dry etching technique, the resist film 23 is removed. .

Thereafter, an electrode film 22, the SiO ₂ by a method such as vapor deposition or sputtering, a protective film 24 so as to cover, as shown in FIG. 2 (e).

Next, as shown in FIG. 2 (f), a resist film 25 is formed on the surface of the protective film 24.

Next, as shown in Fig. 2 (g), the resist film 25 is processed into a desired shape by using exposure, a developing technique, or the like.

Next, as shown in Fig. 2 (h), by using a dry etching technique or the like, the protective film of the portion where the protective film 24 is unnecessary, such as the pad 26 for taking out the electrical signal, is removed, and then the resist film is removed. Remove (25).

Finally, after dividing individually by dicing, it mounted on the ceramic package by die bond etc., after wire bonding, the cover was welded and airtight sealed.

In Example 1 of the present invention,

t2 ≤ h

(Satisfying the relationship of L ≒ p, p1 + p2 = p, L1 + L2 = L, L1≤p1, and L2≥p2).

As a method of obtaining a shape that satisfies this relationship, a so-called bias sputtering method in which a film is formed by sputtering while applying a bias to the substrate side in forming the SiO ₂ film of FIG. At that time, in order to control the shape of the SiO ₂ film, the ratio of the bias applied to the substrate and the sputtering power was changed.

In the first embodiment, how can the relationship between the height t2 from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film and the film thickness h of the electrode be obtained even when the protective film is formed? In order to show, as Example 1 and Comparative Example 2, t2≤h (wherein L ≒ p, p1 + p2 = p, L1 + L2 = L, L1≤p1, L2≥p2 satisfies the relationship) A SAW device and a SAW device of Comparative Example 1 were prepared, wherein h <t2 (where L ≒ p, p1 + p2 = p, L1 + L2 = L, L1≤p1, and L2≥p2) was satisfied. The electrical properties were measured. However, the normalized film thickness (h / 2 x p) of the electrode films of Example 1 and Comparative Example 1 was 7%, and the standardized film thickness (h / 2 x p) of the electrode film of Comparative Example 2 was 4%, and SiO ₂ The film thickness t1 was set to 20% in both Example 1 and Comparative Examples 1 and 2. The SAW device thus prepared is the ladder type SAW filter shown in FIG. 3 formed by connecting the SAW resonator shown in FIG. 1A and the SAW resonator having the structure of FIG. In Fig. 3, reference numeral 31 denotes an LT substrate, reference numeral 32 denotes an SiO ₂ film, reference numeral 34 denotes an electrode pad, reference numeral 33s denotes a SAW resonator disposed in a series arm, and reference numeral 33p denotes a parallel arm. The arranged SAW resonator is shown.

Fig. 4A shows the electrical characteristics of the SAW resonator of Example 1 according to the embodiment of the present invention, and Fig. 4B shows the electrical characteristics of the SAW filter. The electrical characteristics of the SAW resonator of Comparative Example 1 are shown in FIG. 5 (a), the electrical characteristics of the SAW filter of Comparative Example 1 are shown in FIG. 5 (b), and the electrical characteristics of the SAW resonator of Comparative Example 2 are shown in FIG. 6 (b) shows electrical characteristics of the SAW filter of Comparative Example 2. However, in order to take into account the frequency shift between the devices, the electrical characteristics are anti-resonant frequencies for the resonator characteristics and attenuation poles on the high frequency side for the SAW filter. Normalized to the frequency of is shown. In addition, Table 1 shows the structural parameters of the Examples and Comparative Examples.

From the characteristics of the SAW resonators shown in FIGS. 4 (a), 5 (a) and 6 (a), t2 ≦ h (where, L ≒ p, p1 + p2 = p, L1 + L2 = L, It is understood that the SAW resonators of Example 1 and Comparative Example 2, which satisfy the relationship of L1? P1 and L2? In addition, in the SAW resonators of Example 1 and Comparative Example 1 having a 7% electrode normalized film thickness, the spurious generated on the high frequency side of the anti-resonant frequency is far from the anti-resonant frequency, whereas In the SAW resonator of Comparative Example 2 having a thickness of 4%, this spurious is closer to the anti-resonant frequency. Similarly, the characteristics of the SAW filter are compared with Example 1, in which t2≤h (where L ≒ p, p1 + p2 = p, L1 + L2 = L, L1≤p1, and L2≥p2 satisfies the relationship). The SAW filter of Example 2 showed the abrupt skirt characteristic. However, in the SAW filter whose normalized film thickness of the electrode of the comparative example 2 shown in FIG.6 (b) is 4%, the ripple resulting from the ripple of a resonator generate | occur | produces in the band | band. On the other hand, in the SAW filters of Example 1 and Comparative Example 1 having a film thickness of 7%, the ripple exists out of the band, so that occurrence of unnecessary ripple in the band cannot be seen.

Therefore, in a filter connecting a SAW resonator to a multi-stage ladder, the ripple of the filter is abrupt unless the ripple occurring on the high frequency side of the SAW resonator constituting the filter is higher than the anti-resonant frequency of the SAW resonator. In order to realize the characteristics and to obtain a low loss and high suppression, the shape of SiO ₂ of the SAW resonator constituting the filter is t2 ≦ h (where, L ≒ p, p1 + p2 = p, L1 + L2 = L, The inventors found that it is good to satisfy the relationship of L1? P1 and L2?

From these examples and comparative examples, the frequency difference between the frequency at which the ripple occurring on the high frequency side and the anti-resonant frequency in the SAW resonator is higher than the anti-resonant frequency depends on the thickness of the electrode and the structure of the SiO ₂ film. I think. Thus, the inventors also note that when the structure of SiO ₂ satisfies t2 ≦ h (where L ≒ p, p1 + p2 = p, L1 + L2 = L, L1 ≦ p1, L2 ≧ p2) In order to examine how preferable the electrode film thickness is, the electrode normalized film thickness h / (2 × p) is 3, 5, 7, 10%, and the SiO ₂ normalized film thickness t1 / (2 × p) is 10. , 15% and 20%, SAW resonators were created and the relationship between the ripple generation frequency was investigated. The result is shown in FIG. However, as the structure of SiO ₂ , one having a state of t ≒ t1 in which the ripple of the resonator is considered to be closest to the anti-resonant frequency was created.

Here, the relationship between the frequency of occurrence of the ripple of the resonator and the characteristics of the filter is considered using the simplest inverse L-type ladder filter shown in FIG. In FIG. 8, reference numeral 80 denotes a filter configuration, reference numeral 81 denotes a filter characteristic, reference numeral 82 denotes a SAW resonator arranged in a parallel arm, reference numeral 83 denotes a SAW resonator arranged in a series arm, and 82a denotes the admittance characteristic of the SAW resonators arranged in the parallel arm, and reference numeral 83a denotes the admittance characteristic of the SAW resonators arranged in the series arm. In addition, the area | region 86 has shown the pass band of a filter. In the ladder type SAW filter, the parallel resonance frequency of the series arm resonator and the resonance frequency of the series arm are set almost at the center of the band, and the characteristics of the resonator 83 of the series arm are parallel on the high frequency side of the band at the low frequency side of the band. The characteristics of the arm 82 become dominant. Therefore, in order to prevent the ripple generated on the high frequency side from the anti-resonant frequency of the SAW resonator from affecting the pass band of the filter, the ripple generated in the resonator of the series arm must not be in the band of the filter. Therefore, in this case, among the SAW resonators constituting the filter, the generation frequency of the ripple in the SAW resonator of the series arm is equal to or greater than (pass band / 2 of the filter). Is the goal. Considering that the passband required for a normal mobile communication filter is approximately 0.3 to 0.4 in the non-band, the value of the target (ripple generated frequency-anti-resonant frequency) is 0.15 or more, and therefore from FIG. It turns out that 5% or more of the normalized film thickness of an electrode is preferable.

As mentioned above, in the filter which connects a SAW resonator to a multi-stage ladder type | mold, a rapid filter unless the ripple which generate | occur | produces on the high frequency side rather than the anti-resonance frequency of the SAW resonator which comprises the filter does not appear as the ripple in the band of a filter. In order to realize a skirt characteristic and to obtain a high suppression with low loss, the shape of SiO ₂ of the SAW resonator constituting the filter is t2 ≦ h (where L ≒ p, p1 + p2 = p, L1 + L2 = The inventors have found that the relationship of L, L1? P1, and L2? P2 is satisfied. In particular, the inventors have found that the standardized film thickness h / (2 × p) of the electrode is preferably 0.05 or more.

Although the SiO ₂ film was used as the protective film in the first embodiment, the protective film is not limited to this, and even when other dielectric films such as SiN, SiON, Ta ₂ O ₅ are used, the same effect can be obtained if the shape satisfies the above conditions. Of course it is. In the present Example 1, but using a 36 ° LT as the substrate, the substrate is a not limited to this, jeolchul a different angle LT or, for example, LiNbO ₃ or LiB ₂ O _3, KNbO _3, etc. different in In the SAW apparatus using a piezoelectric substrate, and the SAW apparatus in which an electrode was formed on the piezoelectric film, when a protective film is formed in the surface, if the shape satisfy | fills the said conditions, of course, the same effect can be acquired.

In addition, although bias sputtering was used in the present Example 1 as a formation method of a shape, this also is not limited to this method.

(Example 2)

EMBODIMENT OF THE INVENTION Hereinafter, the SAW apparatus in Example 2 of this invention is demonstrated, referring drawings.

In the second embodiment, the same SAW device as the first embodiment was used. Fig. 9 is a sectional view of the SAW device in accordance with the second exemplary embodiment of the present invention. In this figure, the same structure as that of FIG.

The protective film 4 is preferably made of SiO _2, and as shown in FIG. 9, the upper surface thereof has an uneven shape. The convex part 94a of the protective film 4 is provided above the part which has the comb-shaped electrode 2 of the upper surface of the board | substrate 1. As shown in FIG. The concave portion 94b of the protective film 4 is provided at and near the portion where the comb-shaped electrode 2 between the convex portions 94a does not exist on the upper surface of the substrate 1.

Here, the height from the surface of the substrate 1 to which the protective film 4 is in contact with the top of the convex portion 94a of the protective film 4 is t, and the height of the substrate 1 to which the protective film 4 is in contact. From the surface, the height to the bottom of the concave portion 94b of the protective film 4 is t1, and the height t from the bottom of the concave portion 94b of the protective film 4 to the top of the convex portion 94a. Set t1 to t2.

Further, each of the convex portion 94a and the concave portion 94b of the protective film 4 is one pitch, the pitch width per pitch is L, and the width of the convex portion 94a of the protective film 4 is L1. The width of the concave portion 94b of the protective film 4 is L2 (where L = L1 + L2 is established).

The point where FIG. 1 (b) of this Example 2 differs from Example 1 differs from the bottom part of the concave part 4b of the protective film 4 of FIG. 1 (b) of Example 1 from the convex part 4a. While the height t2 to the top is less than or equal to the height h of the comb-shaped electrode 2, in FIG. 9 of the second embodiment of the invention, the convex portion 34a is formed from the bottom of the concave portion 34b of the protective film 34. The height t2 up to the top is the height h or more of the comb teeth 2.

In Example 2 of the present invention,

h≤t2

(Satisfying the relationship of L ≒ p, p1 + p2 = p, L1 + L2 = L, L1≤p1, and L2≥p2).

As a method of obtaining the shape which satisfies this relationship, the manufacturing method is demonstrated below with reference to drawings. In this figure, the same materials and configurations as those in FIG. 2 used in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

10 (a) to 10 (i) are views for explaining a method for manufacturing a SAW device in accordance with the second embodiment of the present invention.

First, as shown in FIG. 10 (a), an electrode film 22 serving as a comb-shaped electrode or / and a reflector is formed on the upper surface of the LT substrate 21 by a method such as vapor deposition or sputtering. do.

Next, form a portion (24a) of the protective film 24, the SiO ₂ by a method such as vapor deposition or sputtering as shown in Fig. 10 (b).

Next, as shown in FIG. 10C, a resist film 23 is formed on the upper surface of the electrode film 22.

Next, as shown in Fig. 10 (d), the resist film 23 is processed by using an exposure / development technique or the like so as to have a desired shape.

Next, as shown in Fig. 10 (e), after the electrode film 22 and the protective film 24a are processed into a desired shape such as a comb-shaped electrode or a reflector using a dry etching technique or the like, a resist film ( 23) Remove. At this time, etching of SiO ₂ and etching of the electrode film were performed by changing the etching gas from a fluorine gas to a chlorine gas on the way.

Thereafter, an electrode film 22, and a protective film (24a) by the SiO ₂ in the method such as vapor deposition or sputtering, a protective film 24 so as to cover, as shown in Fig. 10 (f). At this point, the protective film 24a becomes part of the protective film 24.

Next, as shown in FIG. 10G, a resist film 25 is formed on the surface of the protective film 24.

Next, as shown in FIG. 10 (h), the resist film 25 is processed into a desired shape by using an exposure, a developing technique, or the like.

Next, as shown in Fig. 10 (i), by using a dry etching technique or the like, the protective film of the portion where the protective film 24 is unnecessary, such as the pad 26 for taking out the electrical signal, is removed, and then the resist film is thereafter. Remove (25).

Finally, after dividing individually by dicing, it mounted on the ceramic package by die bond etc., after wire bonding, the cover was welded and airtight sealed.

In addition, in Example 2, the SiO ₂ film of Fig. 10 (f) has a shape such that the shape satisfies the relationship of L, p, p1 + p2 = p, L1 + L2 = L, L1≤p1, and L2≥p2. Formation was carried out to form a SiO ₂ film using a so-called bias sputtering method in which a film was formed while applying an RF bias to the substrate side.

In the second embodiment, how can the relationship between the height t2 from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film and the film thickness h of the electrode be obtained even when the protective film is formed? In addition to Example 2 prepared by the manufacturing method shown in Figs. 10 (a) to 10 (i) in order to show, in Comparative Example 3 and Fig. 2 (a) to Fig. 2 (h) which do not form an SiO ₂ film, By the manufacturing method shown, the electrical characteristics were investigated about three types of SAW apparatuses of the comparative example 4 created using the bias sputter | spatter in FIG.2 (e).

However, in Example 2, the standardized film thickness h / (2 × p) of the electrode of each SAW device is 4%, and the standardized film thickness of SiO ₂ standardized film thickness t1 / (2 × p) is 20%. did.

11 (a) shows electrical characteristics of the SAW resonator of Example 2 according to the embodiment of the present invention, and FIG. 11 (b) shows electrical characteristics of the SAW filter of Example 2. FIG. 12 (a) shows the electrical characteristics of the SAW resonator of Comparative Example 3, FIG. 12 (b) shows the electrical characteristics of the SAW filter of Comparative Example 3, and FIG. 13 (a) shows the SAW resonance of Comparative Example 4. The electrical characteristics of the ruler are shown, and the electrical characteristics of the SAW filter of Comparative Example 4 are shown in FIG. The SAW resonator used in the second embodiment is a SAW resonator having the same configuration as that shown in Fig. 1A, and the SAW filter has the configuration shown in Fig. 3. 11 (a) to 13 (b), the electrical characteristics are anti-resonant frequency with respect to the resonator characteristics in order to take into account the frequency shift between the devices, and also to understand the difference in the characteristics between the devices. In addition, SAW filter was shown by normalizing to the frequency of the attenuation pole on the high frequency side. In addition, Table 2 shows the structural parameters of these Examples and Comparative Examples.

As can be seen from Fig. 12A, the SAW apparatus used in the second embodiment has a standardized film thickness of 4% of the electrode film, so that even when SiO ₂ is absent, the ripple generated on the high frequency side rather than the anti-resonant frequency Occurs relatively close to the anti-resonant frequency. In addition, when comparing the characteristics of the SAW resonator of Comparative Example 3 of FIG. 12A and Comparative Example 4 of FIG. 13A, the ripple generated on the high frequency side of the anti-resonant frequency forms an SiO ₂ film, thereby forming an anti-resonant frequency. You can see it gets closer to the side. Therefore, in Fig. 12 (b), the characteristics of the SAW filter is configured by resonators of SiO ₂ is not formed in Comparative Example 3 prevented the ripple were barely exist outside the pass band, compared to 4 13 In the example As shown in (b), it can be seen that occurring in the pass band. On the other hand, in Example 2, it can be seen from Fig. 11 (a) that the ripple is shifting to the high frequency side. It is considered that this is because the film thickness of the electrode is apparently thickened by SiO ₂ formed on the electrode by setting h ≦ t ₂ . As a result, in the SAW filter constructed using the SAW resonator of FIG. 11 (a) shown in FIG. 11 (b), no ripple occurs in the pass band.

As mentioned above, in the filter which connects a SAW resonator to a multi-stage ladder type | mold, as long as the ripple which generate | occur | produces on the high frequency side rather than the anti-resonant frequency of the SAW resonator which comprises this filter does not appear as the ripple in the band of a filter, If the shape of SiO ₂ of the SAW resonator constituting the filter is h≤t2 (where L ≒ p, p1 + p2 = p, L1 + L2 = L, L1≤p1, and L2≥p2 are satisfied) The inventors found out. In particular, since the reflection coefficient greatly affects the film thickness of the electrode, it is effective when the electrode film thickness is thin, especially when using a resonator having an electrode film thickness of 5% or less from the consideration of FIG. 7 in Example 1 Do.

(Example 3)

Fig. 14 is a sectional view of a SAW device as an electronic component in Embodiment 3 of the present invention. The same top view is shown in the same manner as in Fig. 1 (a).

As shown in Figs. 1A and 14, the SAW apparatus of the third embodiment includes a comb-shaped electrode 2 on the upper surface of the substrate 1, and reflectors (2) on both sides of the comb-shaped electrode 2; 3) and the protective film 4 which covers these comb-shaped electrodes 2 and the reflector 3 at least. Moreover, the comb-shaped electrode 2 has the pad 5 which takes out the electric signal electrically connected with this comb-shaped electrode 2, and comprises SAW apparatus.

The board | substrate 1 consists of lithium tantalate cut out from the Y board which rotated also in the Z-axis direction about the X-axis, It is a 36 degree YLT board | substrate whose rotation angle is 36 degrees.

The comb electrode 2 is made of aluminum (hereinafter, referred to as "Al") or an Al alloy.

The protective film 4 is preferably made of silicon dioxide (hereinafter referred to as "SiO ₂ "). As shown in FIG. 14, the upper surface has an uneven shape. The convex part 4a of the protective film 4 is provided above the part which has the comb-shaped electrode 2 of the upper surface of the board | substrate 1. As shown in FIG. In addition, the recessed part 4b of the protective film 4 is provided in the part in which the comb-shaped electrode 2 between the convex parts 4a does not exist in the upper surface of the board | substrate 1, and its vicinity.

Here, each of the convex portion 4a and the concave portion 4b of the protective film 4 is one pitch, the pitch width per pitch is L, and the width of the convex portion 4a of the protective film 4 is It is set as L1, and the width | variety of the recessed part 4b of the protective film 4 is set to L2 (what L = L1 + L2 holds). In addition, similarly to one pitch of the protective film 4, the portion of the electrode finger 2a of one comb-shaped electrode 2 and the portion of one electrode finger 2a adjacent to each other is transferred to one of the comb-shaped electrode 2. The pitch width is p. The width per electrode of the electrode finger 2a is p1, and the width between neighboring electrode fingers is p2 (p = p1 + p2 is established). Further, the pitch width L of the protective film per pitch and the width L1 / L of the convex and convex portions of the concave and convex portions of the concave-convex shape of the protective film are? ', And the pitch width p and the comb teeth of the comb-shaped electrode per pitch are pitched. The ratio p1 / p of the width p1 per electrode finger which comprises a type | mold electrode is set to (eta).

Moreover, the height from the surface of the board | substrate 1 which is in contact with the protective film 4 to the recessed part 4b of the protective film 4 is set to t, and the thickness of the comb-shaped electrode 2 (on the surface of the board | substrate 1) H to the upper surface of the comb-shaped electrode 2).

Since the manufacturing method of the SAW apparatus in Example 3 of this invention is the same as what was shown to FIG. 2 (a)-FIG. 2 (h), description is abbreviate | omitted.

In Example 3 of the present invention, the shape of the electrode and the SiO ₂ film

L1≤p1, also L2≥p2

(Satisfying the relationship of L ≒ p, p1 + p2 = p and L1 + L2 = L).

As a method of obtaining a shape that satisfies this relationship, a so-called bias sputtering method in which a film is formed by sputtering while applying a bias to the substrate side in forming the SiO ₂ film of FIG. At that time, in order to control the shape of the SiO ₂ film, the ratio of the bias applied to the substrate and the sputtering power was changed.

In Example 3, the following six types of SAW apparatuses (Examples 3 to 5 and Comparative Example 5) are used to show how the shape of the SiO ₂ film can be used to obtain good properties even when a protective film is formed. -7) was created. Comparative Example 5 is a conventional SAW apparatus that does not provide a SiO ₂ film, Comparative Example 6 is a SAW apparatus using conventional sputtering (no bias is applied to the substrate side) in forming a SiO ₂ film, and Comparative Example 7 is SiO _2. A bias sputter was used to form the film, but the SiO ₂ film was formed so that L1? P1 and L2? P2 were changed by changing the ratio of the bias applied to the substrate and the sputtering power. In Example 3, however, the standardized film thickness h / (2 × p) of the electrodes in all Examples and Comparative Examples was 4%, and the standardized film thickness t / (2 × p) of the SiO ₂ film was It was 20%. 15 (a) to 15 (e) show cross-sectional shapes of Examples 3 to 5 and Comparative Examples 6 and 7, and FIG. 16 shows electrical characteristics. In Table 3, the attenuation amount (maximum attenuation amount) at the minimum insertion loss and anti-resonance point, the frequency difference Δf between the resonance frequency and the anti-resonance frequency, which are indicators of steepness, The list of ratio (eta) / (eta) 'of (eta) and (eta)' measured from the cross section of each SAW apparatus shown to FIG. 15 (a)-FIG. 15 (e) is shown.

From Fig. 16 and Table 3, the shape of the SiO ₂ film satisfies the relationship of “L1 ≦ p1, and L2 ≧ p2 (where L ≒ p, p1 + p2 = p, and L1 + L2 = L is satisfied)”. In Comparative Examples 6 and 7, which did not have, the attenuation amount of the anti-resonant frequency was approximately -20 dB, which greatly deteriorated by the formation of SiO ₂ from the comparison with the attenuation amount of Comparative Example 5. On the other hand, for Examples 3, 4, and 5 in which the shape of the SiO ₂ film satisfies the above relationship, the amount of attenuation at the anti-resonant frequency is approximately -25 dB or more, which is almost equivalent to that of Comparative Example 5. In particular, when comparing Examples 3, 4, and 5, the steepness and attenuation increased in the order of Examples 3, 4, and 5, and in Examples 4 and 5, the damping was -26 dB or more, which was almost equivalent to that before forming the SiO ₂ film. Is indicated.

17 is a graph showing the relationship between the maximum amount of attenuation and η '/ η. This graph shows that the amount of attenuation improves as η '/ η decreases. In a particularly 0.86 or less, and is more than 90% of the amount of attenuation when not formed with the SiO _2, even after the formation of SiO ₂ film, it is possible to obtain almost the same performance as before forming SiO ₂ film.

As described above, the inventors satisfy the relationship that the shape of the SiO ₂ film is "L1? P1, and L2? It was found out that good characteristics can be obtained even when the protective film is formed by making the same. In particular, it was found that by setting η '/ η ≤ 0.86, the attenuation equivalent to the case where no protective film was formed was realized.

Although the SiO ₂ film was used as the protective film in the third embodiment, the protective film is not limited to this, and even when other dielectric films such as SiN, SiON, Ta ₂ O ₅ are used, the same effect can be obtained if the shape satisfies the above conditions. Of course it is. In the present Example 3, but using a 36 ° LT as the substrate, the substrate is a not limited to this, jeolchul a different angle LT or, for example, LiNbO ₃ or LiB ₂ O _3, KNbO _3, etc. different in In the SAW apparatus using a piezoelectric substrate, and the SAW apparatus in which an electrode was formed on the piezoelectric film, when a protective film is formed in the surface, if the shape satisfy | fills the said conditions, of course, the same effect can be acquired.

In addition, although bias sputtering was used in the present Example 3 as a formation method of a shape, this also is not limited to this method.

(Example 4)

EMBODIMENT OF THE INVENTION Hereinafter, the SAW apparatus in Example 4 of this invention is demonstrated, referring drawings.

The SAW device in the fourth embodiment used the same SAW device as the SAW device used in Example 3 although the number of electrodes and reflectors and the pitch p were different. Therefore, the structure and preparation method thereof are the same as those shown in Figs. 1A, 14, and 2A to 2H, respectively, and description thereof is omitted. The SAW apparatus according to the fourth embodiment also satisfies the relationship of "L1 ≤ p1 and L2 ≥ p2 (where L ≒ p, p1 + p2 = p, and L1 + L2 = L) is satisfied. .

In the fourth embodiment, the positional relationship between the convex center Lc of the concave-convex portion of the protective film, the center pc of the electrode finger of the comb-shaped electrode, and the electrical characteristics of the SAW device with the protective film having the shape shown in the third embodiment are formed. In order to show, as Example 6, the SAW apparatus in which the convex part center Lc of the unevenness | corrugation of a protective film, and the center pc of the electrode finger | tip of a comb-shaped electrode is almost in a straight line, and the convex center Lc of the uneven | corrugated part of the unevenness | corrugation of a protective film as Comparative Example 8, The SAW apparatus which shifted the center pc of the electrode finger of a comb-shaped electrode was created. Fig. 18 (a) shows the cross-sectional shape of the apparatus of Comparative Example 7 in Fig. 19 (a), and Fig. 19 (a) shows the cross-sectional shape of Example 6 in Fig. 18 (b) and Comparative Example 8 in Fig. 19 (b). Indicates the electrical properties of the device. 18 (b) and 19 (b), in order to take into account frequency shifts between devices, and to easily understand the difference in characteristics between the devices, a standardized frequency standardized by the anti-resonant frequency of each SAW device is used. The dependency is shown.

It turns out that insertion loss and attenuation deteriorate as the convex-convex center Lc of the unevenness | corrugation of a protective film and the center pc of the electrode finger of a comb-tooth-shaped electrode shift. Further, it can be seen that the ripple occurring near the normalized frequency 1.02 is largely generated in FIG. 19 (b), and the frequency difference between the anti-resonant point and the ripple is narrowed. When the ladder type SAW filter is formed using this SAW device, if this ripple is large, the filter characteristics deteriorate, and when this ripple is near the anti-resonant point, it appears as a large ripple in the band of the filter.

Therefore, from the above results, the inventors have found that the shape of the SiO ₂ film has a relationship of “L1 ≦ p1, and L2 ≧ p2 (where L 관계 p, p1 + p2 = p, and L1 + L2 = L)”. In order to obtain satisfactory electrical characteristics in the apparatus created so as to satisfy, the center of the width L1 of the convex portion 4a of the protective film 4 is centered on Lc and below and around the convex portion 4a of the protective film 4. In the case where the center of the width p1 per one of the existing electrode fingers 2 is pc, Lc and pc are on substantially the same straight line as seen from the upper surface of the substrate 1, that is, on the substantially same straight line as seen from the plane. Found out that it is desirable.

(Example 5)

EMBODIMENT OF THE INVENTION Hereinafter, the SAW apparatus in Example 5 of this invention is demonstrated, referring drawings.

The SAW device in the fifth embodiment used the same SAW device as the SAW device used in the third embodiment, although the number of electrodes and reflectors and the pitch p were different. Therefore, the structure and preparation method are the same as those shown in Figs. 1A, 14, and 2A to 2H, respectively, and the description thereof is omitted. The SAW apparatus according to the fifth embodiment also satisfies the relationship of "L1 &lt; p1 and L2 &gt; p2 (however, satisfies the relationship of L ≒ p, p1 + p2 = p and L1 + L2 = L). .

In Example 5, in order to show the relationship between the cutting angle of the board | substrate 1 and the electrical characteristic of the SAW apparatus in which the protective film which has the shape shown in Example 3 was formed, the comparative angles 9 and 10 from which the cutting angle differs are different from each other. SAW apparatus was created using five types of board | substrates of 7, 8, and 9 types. Table 4 shows a list of the cutting angles of the LT substrates used in each SAW apparatus.

20 shows the electrical characteristics of each SAW device. In Fig. 20, however, in order to take into account the frequency shift between the devices, and to clearly understand the difference in characteristics between the devices, the dependence is shown using a normalized frequency normalized to the anti-resonant frequency of each SAW device.

FIG. 20 shows that as the cutting angle of the substrate 1 increases from 34 °, the attenuation amount and steepness are greatly improved. In particular, in the SAW apparatus used in the fifth embodiment, the cutting angle of the substrate may be approximately 38 ° or more in order for the attenuation amount to be -20 dB or more, which is approximately 80% of the attenuation amount when the SiO ₂ film is not formed. Therefore, from the above result, the inventors saw LT cut out from the Y board which rotated the board | substrate 1 in the Z-axis direction about Z-axis, and the angle D ° of the rotation is

38 ° ≤D °

When the phosphorus D ° YLT substrate was used, it was confirmed that good temperature characteristics and electrical characteristics could be obtained.

(Example 6)

EMBODIMENT OF THE INVENTION Hereinafter, the SAW apparatus in Example 6 of this invention is demonstrated, referring drawings.

The SAW device in the sixth embodiment used the same SAW device as the SAW device used in the third embodiment, although the number of electrodes and reflectors and the pitch p were different. Therefore, the structure and preparation method thereof are the same as those shown in Figs. 1A, 14, and 2A to 2H, respectively, and description thereof is omitted. The SAW apparatus according to the sixth embodiment also satisfies the relationship of "L1 ≤ p1 and L2 ≥ p2 (where L1p, p1 + p2 = p, and L1 + L2 = L is satisfied)". . However, the standardized film thickness h / (2xp) of the electrode was 5%.

In Example 6, in order to show the relationship between the film thickness of the SiO ₂ film, the temperature characteristics, and the electrical properties, three types of SAW apparatuses having different thicknesses of SiO ₂ from Examples 10, 11, and 12 and Comparative Example 11 were used. As an example, a SAW device that does not form SiO ₂ was prepared. The electrical characteristics of each apparatus are shown in FIG. 21 and the relationship between the electromechanical coupling coefficient k2 and the SiO ₂ film thickness calculated from the electrical characteristics shown in FIG. 21 is shown in FIG. However, the frequency dependence of the electrical characteristics of FIG. 21 uses the normalized frequency normalized to the resonant frequency of each SAW apparatus in order to take into account the frequency shift between the apparatuses, and also to clearly understand the difference in the characteristics among the apparatuses. Indicated. 23 shows the temperature characteristics measured at the anti-resonant frequency of each SAW device. In addition, Table 5 shows the standardized film thickness t / (2 × p), electromechanical coupling coefficient and temperature characteristics of the SiO ₂ film of each device.

FIG. 23 shows that as the film thickness of the SiO ₂ film becomes thick, its temperature characteristic is also improved. In particular, when the standardized film thickness of the SiO ₂ film is about 0.13 or more, the temperature characteristic is also -30 ppm / K or less, and the temperature coefficient becomes 0 temperature coefficient at about 30%. At the same time, however, FIG. 22 shows that the electromechanical coupling coefficient K2 decreases. As the electromechanical coupling coefficient K2 decreases, steepness increases, but at the same time, when the ladder type SAW filter is constructed using this SAW apparatus, its bandwidth becomes narrow. In order to secure the bandwidth of the filter required in the mobile telephone system which is currently spreading, a coupling coefficient of about 6% or more is preferable. It can be obtained from Fig. 22 that the bonding coefficient of 6% is obtained when the standardized film thickness of SiO ₂ is about 20% or less, and when the film thickness of the SiO ₂ film becomes about 35% or more, the coupling coefficient becomes 5% or less, Securing the band becomes very difficult. On the contrary, if the electromechanical coupling coefficient is too large, the bandwidth becomes wider, but the steepness is lost, and thus it is not possible to sufficiently transition from the pass band to the attenuation band between the transmission band and the reception band, and sufficient suppression can be obtained in the attenuation band. The problem arises that there is no, or the loss is large in the pass band. Further, in consideration of the temperature coefficient, the transition region from the pass band to the attenuation band allowed for the filter characteristic needs to be equal to or less than the drift frequency width due to the frequency gap-temperature between the transmission band and the reception band. Therefore, considering FIGS. 22 and 23, the film thickness of the SiO ₂ film is thicker than the case where the film thickness of the SiO ₂ film having an electromechanical coupling coefficient of about 7% and a temperature characteristic of about -30 ppm / ° K is 13%. Is preferred. Thus, the inventors have found from the above results, by using the SiO ₂ as the protective film, the thickness t of the protective film to be defined by the height from the substrate surface to the concave portion of the protective film

13% ≤ t / (2 × p) ≤ 35%

It was confirmed that favorable temperature characteristics and electrical characteristics could be obtained when the conditions of.

(Example 7)

EMBODIMENT OF THE INVENTION Below, the electronic device in Example 7 of this invention is demonstrated, referring drawings.

In the present embodiment, a mobile phone is taken as an example of an electronic device.

Fig. 24A is an overview diagram of a cellular phone in Embodiment 7 of the present invention, and Fig. 24B is an electric circuit diagram of main parts of the same interior.

As shown in the same figure, the cellular phone of the seventh embodiment has an antenna 121 and an antenna common device 122 connected to the antenna 121. This antenna common unit 122 is comprised by the transmission SAW filter 122a, the reception SAW filter 122b, and the ideal circuit 122c.

The transmission SAW filter 122a and the reception SAW filter 122b in the seventh embodiment use the SAW apparatus described in the third embodiment.

25A shows electrical characteristics measured at respective temperatures of -35 ° C, 25 ° C, and + 85 ° C of the SAW filter 122a.

25 (b) shows electrical characteristics measured at temperatures of −35 ° C., 25 ° C., and + 85 ° C. of the SAW filter which do not form the SiO ₂ film of the same frequency band as the SAW filter 122a for comparison. . 25 (a) and 25 (b), the transmission band 131 and the reception band 132 in the cellular phone system adopted as an example of the seventh embodiment are shown by hatching. In this mobile phone system, in the temperature range of -35 ° C to + 85 ° C, the suppression of the transmission filter requires insertion loss of -3.5 dB or less in the transmission band and -42 dB or more in the reception band.

Comparing Fig. 25 (a) with Fig. 25 (b), the filter having the characteristic of Fig. 25 (a) using the SAW apparatus described in the third embodiment has a steep filter characteristic and frequency drift due to temperature change In contrast, in the temperature range of -30 ° C to + 85 ° C, which is a required performance of the mobile phone system, suppression of insertion loss of -3.5 dB or less in the transmission band and -42 dB or more in the reception band is realized. I Fig. 25 (a) can realize the rapid filter characteristics do not form a film is SiO ₂ having a characteristic of, but not even meet the requirement of room temperature, and the frequency drift due to a temperature greater, -30 ℃ ~ + 85 ℃ The characteristics cannot be satisfied in the range of.

For the cellular phone using the SAW filter 122a for transmission and the SAW filter 122b for reception using the SAW apparatus described in Embodiment 1, the inventors similarly measured the sensitivity in an environment of -30 ° C to + 85 ° C. It was confirmed that the change in sensitivity was small with respect to the temperature change.

(Example 8)

Fig. 26 is a sectional view of the SAW device in accordance with the eighth embodiment of the present invention. The same top view is shown in the same manner as in Fig. 1 (a).

As shown in FIGS. 1A and 26, the SAW apparatus of the eighth embodiment has a comb-shaped electrode 2 on the upper surface of the substrate 1 and reflectors (both sides) of the comb-shaped electrode 2. 3) and the protective film 4 which covers these comb-shaped electrodes 2 and the reflector 3 at least. Moreover, the comb-shaped electrode 2 has the pad 5 which extracts the electric signal electrically connected with this comb-shaped electrode, and comprises SAW apparatus.

The board | substrate 1 consists of lithium tantalate cut out from the Y board which carried out water rotation in the Z-axis direction around the X-axis, and is a 36 degree YLT board | substrate whose rotation angle is 36 degrees.

The comb-shaped electrode 2 is made of aluminum (hereinafter, referred to as "Al") or Al alloy.

The protective film 4 is preferably made of silicon dioxide (hereinafter referred to as "SiO ₂ "). As shown in FIG. 26, the upper surface has an uneven shape. The convex part 4a of the protective film 4 is provided above and near the part which has the comb-shaped electrode 2 of the upper surface of the board | substrate 1. As shown in FIG. In addition, the recessed part 4b of the protective film 4 is provided in the part in which the comb-shaped electrode 2 between the convex parts 4a does not exist in the upper surface of the board | substrate 1. As shown in FIG.

Here, the height from the surface of the substrate 1 to which the protective film 4 is in contact with the top of the convex portion 4a of the protective film 4 is t, and the height of the substrate 1 to which the protective film 4 is in contact. The height from the surface to the bottom of the recessed portion 4b of the protective film 4 is t1, and the height from the bottom of the recessed portion 4b of the protective film 4 to the top of the convex portion 4a ( Let t-t1) be t2.

Moreover, the height h of the comb-tooth shaped electrode 2 is made from the surface of the board | substrate 1 which the protective film 4 contact | connects to the top part of the electrode finger 2a.

Further, each of the convex portion 4a and the concave portion 4b of the protective film 4 is one pitch, the pitch width per pitch is L, and the width of the top of the convex portion 4a of the protective film 4 is set to 1 pitch. Is L1, and the width of the bottom portion of the concave portion 4b of the protective film 4 is L2. In addition, similarly to one pitch of the protective film 4, the portion of the electrode finger 2a of one comb-shaped electrode 2 and the portion of one electrode finger 2a adjacent to each other is transferred to one of the comb-shaped electrode 2. The pitch width is p.

The width per electrode of the electrode finger 2a is p1, and the width between neighboring electrode fingers is p2 (p = p1 + p2 is established).

Further, the ratio (L-L2) / L of the pitch width L and (L-L2) is η ', and the ratio p1 / p of the width p1 of one pitch width of the comb-shaped electrode 2 and the width of each electrode finger is η. define.

In Example 8 of the present invention,

h ≤ t2

(However, the relationship of? '-0.3 <η≤η', L_p, p1 + p2_p, L1> p1) is satisfied.

In addition, although 36 degrees YLT was used for the board | substrate 1 mentioned above, LT was cut out from the Y board which rotated this board | substrate 1 in the Z-axis direction D degree around the X-axis, and the angle D ° of the rotation is

38 ° ≤D °

The same effect is also obtained when using a D ° YLT substrate.

Since the manufacturing method of the SAW apparatus in Example 8 of this invention is the same as what was shown to FIG. 2 (a)-FIG. 2 (h), description is abbreviate | omitted.

Further, the inventors have regarded the preparation of the SAW apparatus described above. In the eighth embodiment, there is a relationship between the height h of the comb-shaped electrode 2 and the pitch width p per pitch of the comb-shaped electrode 2.

h / (2 × p) ≤ 0.05

It is also found out that the shape of the protective film required is relatively easy to achieve.

The electrical characteristics of the SAW device created as described above were examined. As a result, the inventors confirmed that good characteristics can be obtained.

Further, the inventors also investigated the temperature characteristics, and found that, using SiO ₂ as the protective film, the height t1 from the substrate surface to the recessed portion of the protective film was

18% ≤ t1 / (2 × p) ≤ 35%

It was also confirmed that favorable temperature characteristics could be obtained when the conditions were satisfied.

(Example 9)

EMBODIMENT OF THE INVENTION Hereinafter, the SAW apparatus in Example 9 of this invention is demonstrated, referring drawings.

In the ninth embodiment, the SAW device used the same SAW device as that of the eighth embodiment. Fig. 27 is a sectional view of the SAW device in accordance with the ninth embodiment of the present invention. In this figure, the same configuration as that in FIG. 26 used in the eighth embodiment is denoted by the same reference numerals, and description thereof is omitted.

In FIG. 27, the protective film 234 is preferably made of SiO _2. As shown in FIG. 27, the upper surface has an uneven shape. The convex portion 234a of the protective film 234 is provided above and in the vicinity of the portion having the comb-shaped electrode 2 on the upper surface of the substrate 1. In addition, the recessed part 234b of the protective film 234 is provided in the part in which the comb-shaped electrode 2 between the convex parts 234a does not exist in the upper surface of the board | substrate 1. As shown in FIG. Here, each of the convex portion 234a and the concave portion 234b of the protective film 234 is one pitch, the pitch width per pitch is L, and the top of the convex portion 234a of the protective film 234 is set to one pitch. The width is L1, the width of the bottom of the concave portion 234b of the protective film 234 is L2, and the ratio (L-L2) / L of the pitch width L and (L-L2) is? '. Moreover, the height from the surface of the board | substrate 1 which the protective film 234 contact | connects to the top part of the convex part 234a of the protective film 234 is t, and of the board | substrate 1 which the protective film 234 contact | connects. The height from the surface to the bottom of the concave portion 234b of the protective film 234 is t1, and the height from the bottom of the concave portion 234b of the protective film 234 to the top of the convex portion 234a ( Let t-t1) be t2.

The difference between FIG. 26 of the ninth embodiment and the eighth embodiment is that the convex portion 4a of the protective film 4 of FIG. 26 of the eighth embodiment has almost all the shapes, and the angle is approximately 90 °. In contrast, in FIG. 27 of the ninth embodiment, the shape of the convex portion 234a of the protective film 234 is that the angle is round.

In Example 9 of the present invention,

h ≤ t2

After satisfying the relationship of (? '-0.3 <η≤η', L, p, p1 + p2 ≒ p, L1> p1),

L1 + L2 <L or L2 <p2

To satisfy the relationship.

In addition, since the preparation method of the SAW apparatus in Embodiment 9 is the same as that of the method described in Embodiment 8, description is omitted.

Further, the inventors have regarded the preparation of the SAW apparatus described above, and in this embodiment 9, there is also a relationship between the height of the comb-shaped electrode 2 and the pitch width p per pitch of the comb-shaped electrode 2.

h / (2 × p) ≤0.05

It is also found out that the shape of the protective film required is relatively easy to achieve.

The inventors of the SAW device configured as described above, as a result of investigating the electrical characteristics, confirmed that good characteristics can be obtained. In addition, as a result of investigating the temperature characteristics, the height t1 from the substrate surface to the recessed portion of the protective film was determined using SiO ₂ as the protective film.

18% ≤ t1 / (2 × p) ≤ 35%

It was also confirmed that favorable temperature characteristics could be obtained when the conditions were satisfied.

(Example 10)

EMBODIMENT OF THE INVENTION Below, the SAW apparatus in Example 10 of this invention is demonstrated, referring drawings.

In the tenth embodiment, the SAW device used the same SAW device as that of the eighth embodiment. Fig. 28 is a sectional view of a SAW device in accordance with a tenth embodiment of the present invention. In this figure, the same configuration as that in FIG. 26 used in the eighth embodiment is denoted by the same reference numerals, and description thereof is omitted.

In FIG. 28, the protective film 44 is preferably made of SiO _2, and as shown in FIG. 28, the upper surface has a concave-convex shape. The convex portion 244a of the protective film 244 is provided above and in the vicinity of the portion having the comb-shaped electrode 2 on the upper surface of the substrate 1. The concave portion 244b of the protective film 244 is provided at a portion where the comb-shaped electrodes 2 between the convex portions 244a do not exist on the upper surface of the substrate 1. Here, each of the convex portion 244a and the concave portion 244b of the protective film 244 is one pitch, the pitch width per pitch is L, and the top of the convex portion 244a of the protective film 244 is The width is L1, the width of the bottom portion of the concave portion 244b of the protective film 244 is L2, and the ratio (L-L2) / L of the pitch width L and (L-L2) is? '. Moreover, the height from the surface of the board | substrate 1 which the protective film 244 contact | connects to the top part of the convex part 244a of the protective film 244 is t, and of the board | substrate 1 which the protective film 244 contact | connects. The height from the surface to the bottom of the recess 44b of the protective film 44 is t1, and the height from the bottom of the recess 44b of the protective film 44 to the top of the convex 44a ( Let t-t1) be t2.

26 differs from that in the tenth embodiment and the eighth embodiment in that the width L1 of the top of the convex portion 4a of the protective film 4 in FIG. 26 of the eighth embodiment is wider than the width p1 of the electrode 2a. Therefore, while the convex part 4a of the protective film 4 exists above and in the vicinity of the electrode 2a, in the present Example 10, the top part of the convex part 244a of the protective film 244 is present. The width L1 is a point narrower than the width p1 of the electrode 2a.

In Example 10 of the present invention,

h ≤ t2

(Satisfying the relationship of L1 + L2 <L, L2 <p2, L1≤p1, L_p, p1 + p2_p).

In addition, since the preparation method of the SAW apparatus in Example 10 is the same as that of the method demonstrated in Example 8, description is abbreviate | omitted.

In addition, the inventors of the SAW apparatus described above have a relationship between the height of the comb-shaped electrode 2 and the pitch width p per pitch of the comb-shaped electrode 2 also in the tenth embodiment.

h / (2 × p) ≤0.05

It is also found out that the shape of the protective film required is relatively easy to achieve.

The inventors of the SAW device configured as described above, as a result of investigating the electrical characteristics, confirmed that good characteristics can be obtained. In addition, as a result of investigating the temperature characteristic, when SiO ₂ is used as the protective film, and the height from the substrate surface to the recess of the protective film is t1,

18% ≤t1 / (2 × p) ≤35%

It was also confirmed that favorable temperature characteristics could be obtained when the conditions were satisfied.

(Example 11)

EMBODIMENT OF THE INVENTION Hereinafter, the SAW apparatus in Embodiment 11 of this invention is demonstrated, referring drawings.

In the eleventh embodiment, the same SAW device as that of the eighth embodiment was used. Fig. 29 is a sectional view of the SAW device in accordance with the eleventh embodiment of the present invention. In this figure, the same configuration as that in FIG. 26 used in the eighth embodiment is denoted by the same reference numerals, and description thereof is omitted.

The protective film 254 in Fig. 29 is to be preferably made of SiO _2, as shown in Figure 29, the upper surface is provided with irregularities. The convex portion 254a of the protective film 254 is provided above and in the vicinity of the portion having the comb-shaped electrode 2 on the upper surface of the substrate 1. The concave portion 254b of the protective film 254 is provided at a portion where the comb-shaped electrodes 2 between the convex portions 254a do not exist on the upper surface of the substrate 1. Here, one of the convex portion 254a and the concave portion 254b of the protective film 254 is one pitch, and the pitch width per pitch is L, and the top of the convex portion 254a of the protective film 254 is one pitch. The width is L1, the width of the bottom of the concave portion 254b of the protective film 254 is L2, and the ratio (L-L2) / L of the pitch width L and (L-L2) is? '. Moreover, the height from the surface of the board | substrate 1 which the protective film 254 contact | connects to the top part of the convex part 254a of the protective film 254 is t, and of the board | substrate 1 which the protective film 254 contact | connects The height from the surface to the bottom of the concave portion 254b of the protective film 254 is t1, and the height from the bottom of the concave portion 254b of the protective film 254 to the top of the convex portion 254a ( Let t-t1) be t2.

The difference between FIG. 26 of the eleventh embodiment and the eighth embodiment is that the height t2 from the bottom of the concave portion 4b of the protective film 4 of FIG. 26 to the top of the convex portion 4a of the eighth embodiment. In addition, compared with setting the height h of the comb-shaped electrode 2 or more, in FIG. 29 of the eleventh embodiment, from the bottom of the concave portion 254b of the protective film 254 to the top of the convex portion 254a. The height t2 is lower than the height h of the comb teeth 2.

In the eleventh embodiment,

0 <t2 <h

(Satisfying the relationship of? '-0.3 <η≤η', L, p, p1 + p2 ≒ p, L1> p1).

In addition, in the eleventh embodiment, the relationship between the height h of the comb-shaped electrode and the pitch width p per pitch of the comb-shaped electrode is

0.05≤h / (2 × p)

It is more preferable in the characteristic.

Since the SAW device creation method in the eleventh embodiment is the same as the method described in the eighth embodiment, description thereof is omitted.

The inventors of the SAW device configured as described above, as a result of investigating the electrical characteristics, confirmed that good characteristics can be obtained. In addition, as a result of investigating the temperature characteristics, the height t1 from the substrate surface to the recessed portion of the protective film was determined using SiO ₂ as the protective film.

18% ≤ t1 / (2 × p) ≤ 35%

It was also confirmed that favorable temperature characteristics could be obtained when the conditions were satisfied.

(Example 12)

EMBODIMENT OF THE INVENTION Hereinafter, the SAW apparatus in Example 12 of this invention is demonstrated, referring drawings.

In the twelfth embodiment, the same SAW device as the eighth embodiment used the SAW device. 30 is a cross-sectional view of a SAW device in accordance with a twelfth embodiment of the present invention. In this figure, the same configuration as that in FIG. 26 used in the eighth embodiment is denoted by the same reference numerals, and description thereof is omitted.

The protective film 264 in Figure 30 is to be preferably made of SiO _2, as shown in Figure 30, the upper surface is provided with irregularities. The convex part 264a of the protective film 264 is provided above and in the vicinity of the part which has the comb-shaped electrode 2 of the upper surface of the board | substrate 1. As shown in FIG. The concave portion 264b of the protective film 264 is provided in a portion where the comb-shaped electrode 2 between the convex portions 264a does not exist on the upper surface of the substrate 1. Here, each of the convex portion 264a and the concave portion 264b of the protective film 64 is one pitch, the pitch width per pitch is L, and the top portion of the convex portion 264a of the protective film 264 is formed. The width is L1, the width of the bottom of the concave portion 264b of the protective film 264 is L2, and the ratio (L-L2) / L of the pitch width L and (L-L2) is? '. Moreover, the height from the surface of the board | substrate 1 which the protective film 264 contact | connects to the top part of the convex part 264a of the protective film 264 is t, and the board | substrate 1 of the protective film 264 which contact | connects The height from the surface to the bottom of the concave portion 264b of the protective film 264 is t1, and the height from the bottom of the concave portion 264b of the protective film 264 to the top of the convex portion 264a ( Let t-t1) be t2.

The difference between FIG. 26 of Example 12 and Example 8 is that the shape of the convex part 4a of the protective film 4 of FIG. 26 of Example 8 is substantially confined, and the angle is set to approximately 90 degrees. In contrast, in FIG. 30 of the twelfth embodiment of the present invention, the shape of the convex portion 264a of the protective film 264 is that the angle is round. The height t2 from the bottom of the concave portion 4b of the protective film 4 of FIG. 26 to the top of the convex portion 4a of the eighth embodiment is equal to or higher than the height h of the comb-shaped electrode 2. In contrast, in FIG. 30 of the twelfth embodiment, the height t2 from the bottom of the concave portion 264b of the protective film 264 to the top of the convex portion 264a is lower than the height h of the comb-shaped electrode 2. The points are different.

In Example 12 of the present invention,

0 <h <t2

After satisfying the relationship of (? '-0.3 <η≤η', L, p, p1 + p2 ≒ p, L1> p1),

L1 + L2 <L or L2 <p2

To satisfy the relationship.

Also in the twelfth embodiment, the relationship between the height h of the comb-shaped electrode and the pitch width p per pitch of the comb-shaped electrode is

0.05 ≤ h / (2 × p)

It is more preferable in the characteristic.

Since the preparation method of the SAW apparatus in this twelfth embodiment is the same as the method described in the eighth embodiment, description thereof is omitted.

The inventors of the SAW device configured as described above, as a result of investigating the electrical characteristics, confirmed that good characteristics can be obtained.

In addition, as a result of investigating the temperature characteristics, the height t1 from the substrate surface to the recessed portion of the protective film was determined using SiO ₂ as the protective film.

18% ≤ t1 / (2 × p) ≤ 35%

It was also confirmed that favorable temperature characteristics could be obtained when the conditions were satisfied.

(Example 13)

EMBODIMENT OF THE INVENTION Below, the SAW apparatus in Example 13 of this invention is demonstrated, referring drawings.

In the thirteenth embodiment, the same SAW device as that of the eighth embodiment was used. Fig. 31 is a sectional view of the SAW apparatus in accordance with the thirteenth embodiment of the present invention. In this figure, the same configuration as that in FIG. 26 used in the eighth embodiment is denoted by the same reference numerals, and description thereof is omitted.

In Fig. 31, the protective film 274 is preferably made of SiO _2, and as shown in Fig. 31, the upper surface has an uneven shape. The convex portion 274a of the protective film 274 is provided above and in the vicinity of the portion having the comb-shaped electrode 2 on the upper surface of the substrate 1. The concave portion 274b of the protective film 274 is provided at a portion where the comb-shaped electrodes 2 between the convex portions 274a do not exist on the upper surface of the substrate 1. Here, one of each of the convex portion 274a and the concave portion 274b of the protective film 274 is one pitch, the pitch width per pitch is L, and the top of the convex portion 274a of the protective film 274 is formed. The width is L1, the width of the bottom of the concave portion 274b of the protective film 74 is L2, and the ratio (L-L2) / L of the pitch width L and (L-L2) is? '. Moreover, the height from the surface of the board | substrate 1 which the protective film 274 abuts to the top part of the convex part 274a of the protective film 274 is t, and of the board | substrate 1 which the protective film 274 abuts. The height from the surface to the bottom of the concave portion 274b of the protective film 274 is t1, and the height from the bottom of the concave portion 274b of the protective film 274 to the top of the convex portion 274a ( Let t-t1) be t2.

26 is different from that in the thirteenth embodiment and the eighth embodiment, the width L1 of the top of the convex portion 4a of the protective film 4 in FIG. 26 of the eighth embodiment is wider than the width p1 of the electrode 2a, Therefore, the convex portion 4a of the protective film 4 is present above and in the vicinity of the electrode 2a, whereas in the thirteenth embodiment, the width of the top of the convex portion 274a of the protective film 274 is wide. L1 is a point narrower than the width p1 of the electrode 2a. The height t2 from the bottom of the concave portion 4b of the protective film 4 of FIG. 26 to the top of the convex portion 4a of the eighth embodiment is equal to or higher than the height h of the comb-shaped electrode 2. In contrast, in FIG. 31 of the thirteenth embodiment, the height t2 from the bottom of the concave portion 274b of the protective film 274 to the top of the convex portion 274a is lower than the height h of the comb-shaped electrode 2. The points are different.

In Example 13 of the present invention,

0 <t2 <h

(Satisfying the relationship of L1 + L2 <L, L2 <p2, L1≤p1, L_p, p1 + p2_p).

Also in the thirteenth embodiment, the relationship between the height h of the comb-shaped electrode and the pitch width p per pitch of the comb-shaped electrode is

0.05 ≤ h / (2 × p)

It is more preferable in the characteristic.

Since the preparation method of the SAW apparatus in this thirteenth embodiment is the same as the method described in the eighth embodiment, description thereof is omitted.

The inventors of the SAW device configured as described above, as a result of investigating the electrical characteristics, confirmed that good characteristics can be obtained.

In addition, as a result of investigating the temperature characteristic, if the height t from the substrate surface to the recessed portion of the protective film is used using SiO ₂ as the protective film,

18% ≤ t / (2 × p) ≤ 35%

It was also confirmed that favorable temperature characteristics could be obtained when the conditions were satisfied.

In addition, any of the SAW devices described as the eighth to thirteenth embodiments can be used for the transmission SAW filter 122a and the reception SAW filter 122b shown in Fig. 24B. With respect to the mobile telephone configured as described above, the inventors measured the sensitivity in an environment of -25 ° C to 85 ° C and found that the change in sensitivity was small with respect to the temperature change.

(Example 14)

Fig. 32 is a sectional view of a SAW device in accordance with a fourteenth embodiment of the present invention. The same top view is shown in the same manner as in Fig. 1 (a).

As shown in Figs. 1A and 32, the SAW apparatus of the fourteenth embodiment has a comb-shaped electrode 2 on the upper surface of the substrate 1, and reflectors (2) on both sides of the comb-shaped electrode 2; 3) and the protective film 4 which covers these comb-shaped electrodes 2 and the reflector 3 at least. Moreover, the comb-shaped electrode 2 has the pad 5 which takes out the electric signal electrically connected with this comb-shaped electrode 2, and comprises SAW apparatus.

The board | substrate 1 consists of lithium tantalate cut out from the Y board which rotated the water about the X-axis in the Z-axis direction, and is a 36 degree YLT substrate whose rotation angle is 36 degrees.

The comb electrode 2 is made of aluminum (hereinafter, referred to as "Al") or an Al alloy.

The protective film 4 is preferably made of silicon dioxide (hereinafter referred to as "SiO ₂ "). As shown in FIG. 32, the upper surface has an uneven shape. The convex part 4a of the protective film 4 is provided above and near the part which has the comb-shaped electrode 2 of the upper surface of the board | substrate 1. As shown in FIG. In addition, the recessed part 4b of the protective film 4 is provided in the part in which the comb-shaped electrode 2 between the convex parts 4a does not exist in the upper surface of the board | substrate 1. As shown in FIG.

Here, each of the convex portion 4a and the concave portion 4b of the protective film 4 is one pitch, the pitch width per pitch is L, and the top of the convex portion 4a of the protective film 4 is The width is set to L1, and the width of the bottom portion of the concave portion 4b of the protective film 4 is set to L2. In addition, similarly to one pitch of the protective film 4, the portion of the electrode finger 2a of one comb-shaped electrode 2 and the portion of one electrode finger 2a adjacent to each other is transferred to one of the comb-shaped electrode 2. The pitch width is p. The width per electrode of the electrode finger 2a is p1, and the width between neighboring electrode fingers is p2 (p = p1 + p2 is established).

Moreover, the height from the surface of the board | substrate 1 which is in contact with the protective film 4 to the bottom part of the recessed part 4b of the protective film 4 is made into the thickness t of the protective film 4.

Further, the ratio (L-L2) / L of the pitch width L and (L-L2) is η ', and the ratio p1 / p of the width p1 of one pitch width of the comb-shaped electrode 2 and the width of each electrode finger is η. do.

In Example 14 of the present invention,

η'-0.3 <η ≤ η '

(Where, L ≒ p, p1 + p2 ≒ p, L1> p1) is satisfied.

In addition, although 36 degrees YLT was used for the board | substrate 1 mentioned above, as this LT cut out from the Y board which rotated this board | substrate 1 in the Z-axis direction about the X-axis, the angle D ° of the rotation is ,

38 ° ≤D °

The same effect is also obtained when using a D ° YLT substrate.

Since the manufacturing method of the SAW apparatus in Example 14 of this invention is the same as that shown in FIG.2 (a)-FIG.2 (h), description is abbreviate | omitted.

The electrical characteristics (resonator characteristics) of the SAW apparatus created as described above were examined. As a result, the inventors confirmed that good characteristics can be obtained.

Further, the inventors also investigated the temperature characteristics, and found that, using SiO ₂ as the protective film, the thickness t of the protective film defined by the height from the substrate surface to the recess of the protective film is

`` 18% ≤ t / (2 x p) ≤ 35% ''

It was also confirmed that favorable temperature characteristics could be obtained when the conditions were satisfied.

(Example 15)

EMBODIMENT OF THE INVENTION Hereinafter, the SAW apparatus in Example 15 of this invention is demonstrated, referring drawings.

In the fifteenth embodiment, the same SAW device as the fourteenth embodiment was used. Fig. 33 is a sectional view of a SAW device in accordance with a fifteenth embodiment of the present invention. In this figure, the same configuration as that in FIG. 32 used in the fourteenth embodiment is denoted by the same reference numerals, and description thereof is omitted.

In Fig. 33, the protective film 334 is preferably made of silicon dioxide (hereinafter referred to as "SiO ₂ "). As shown in Fig. 33, the upper surface has an uneven shape. The convex part 334a of the protective film 334 is provided above and in the vicinity of the part which has the comb-shaped electrode 2 of the upper surface of the board | substrate 1. As shown in FIG. The concave portion 334b of the protective film 334 is provided in a portion where the comb-shaped electrode 2 between the convex portions 334a does not exist on the upper surface of the substrate 1. Here, one of the convex portion 334a and the concave portion 334b of the protective film 334 is one pitch, and the pitch width per pitch is L, and the top of the convex portion 334a of the protective film 334 is one. The width is set to L1, and the width of the bottom portion of the concave portion 334b of the protective film 334 is set to L2.

The difference between the sixteenth embodiment and the fourteenth embodiment shown in FIG. 32 is that the convex portions 4a of the protective film 4 of FIG. 32 of the fourteenth embodiment are almost all in shape, and the angle is approximately 90 degrees. In contrast, in the fifteenth embodiment of the present invention, the shape of the convex portion 334a of the protective film 334 is that the angle is round.

In Example 15 of the present invention,

η'-0.3 <η ≤ η '

(Where, L ≒ p, p1 + p2 ≒ p, L1> p1), and

L1 + L2 <L, also L2 <p2

To satisfy the relationship.

In addition, since the preparation method of the SAW apparatus in this Embodiment 15 is the same as that of the method demonstrated in Example 14, description is abbreviate | omitted.

As a result of investigating the electrical characteristics (resonator characteristics) of the SAW apparatus comprised as mentioned above, it was confirmed that a favorable characteristic can be obtained. In addition, as a result of investigating the temperature characteristics, if the height from the substrate surface to the recess of the protective film is t using SiO ₂ as the protective film,

18% ≤ t / (2 × p) ≤ 35%

It was also confirmed that favorable temperature characteristics could be obtained when the conditions were satisfied.

(Example 16)

EMBODIMENT OF THE INVENTION Below, the SAW apparatus in Embodiment 16 of this invention is demonstrated, referring drawings.

In the sixteenth embodiment, the same SAW device as the fourteenth embodiment was used. Fig. 34 is a sectional view of a SAW device in accordance with a sixteenth embodiment of the present invention. In this figure, the same configuration as that in FIG. 32 used in the fourteenth embodiment is denoted by the same reference numerals, and description thereof is omitted.

In Figure 34, the protective film 344 (four in FIG. 32) is to be preferably made of SiO _2, as shown in Figure 34, the upper surface is provided with irregularities. The convex portion 344a of the protective film 344 is provided above and near the portion having the electrode finger 2a formed on the upper surface of the substrate 1. Moreover, the recessed part 344b of the protective film 44 is provided in the part in which the comb-shaped electrode 2 between the convex parts 344a does not exist in the upper surface of the board | substrate 1. As shown in FIG. Here, one of the convex portion 344a and the concave portion 344b of the protective film 344 is one pitch, and the pitch width per pitch is L, and the top portion of the convex portion 344a of the protective film 344 is one. The width is set to L1, and the width of the bottom portion of the recessed portion 344b of the protective film 344 is set to L2.

The difference between the sixteenth embodiment and the fourteenth embodiment shown in FIG. 32 is that the width L1 of the top of the convex portion 4a of the protective film 4 of FIG. 32 of the fourteenth embodiment is the width p1 of the electrode finger 2a. While the convex portion 4a of the protective film 4 is wider than the electrode finger 2a above and in the vicinity thereof, in the sixteenth embodiment, the top of the convex portion 344a of the protective film 344 is larger than that of the protective film 344. The width L1 is a point set narrower than the width p1 of the electrode finger 2a.

In Example 16 of the present invention,

L1 + L2 <L, L2 <p2, and also L1 <p1

(However, it is necessary to satisfy the relationship of L ≒ p, p1 + p2 ≒ p).

In addition, since the preparation method of the SAW apparatus in this Embodiment 16 is the same as that of the method demonstrated in Example 14, description is abbreviate | omitted.

As a result of investigating the electrical characteristics (resonator characteristics) of the SAW apparatus comprised as mentioned above, it was confirmed that a favorable characteristic can be obtained. In addition, as a result of investigating the temperature characteristics, if the height from the substrate surface to the recessed portion of the protective film is t using SiO ₂ as the protective film,

18% ≤ t / (2 × p) ≤ 35%

It was also confirmed that favorable temperature characteristics could be obtained when the conditions were satisfied.

In addition, any of the SAW devices described as Embodiments 14 to 16 can be used for the transmission SAW filter 122a and the reception SAW filter 122b shown in Fig. 24B. With respect to the mobile telephone configured as described above, the inventors measured the sensitivity in an environment of -25 ° C to 85 ° C and found that the change in sensitivity was small with respect to the temperature change.

Although the present invention has been described in detail, the foregoing description is in all aspects illustrative, and the present invention is not limited thereto. It is understood that numerous modifications that are not illustrated may be envisioned without departing from the scope of the present invention.

(Method of determining width L1, L2)

Here, in Examples 1 to 12 and Comparative Examples 1 to 11, a method for determining the width L1 of the convex portion of the protective film and the width L2 of the concave portion will be described. The cross-sectional shape of the SAW device is obtained by coating the surface of the SAW device with a metal, and then cutting the electrode in the SAW propagation direction by FIB (Focused Ion Beam), which is shown in Figs. As mentioned above, the shape was specified from the result observed with the electron microscope (SEM). However, for example, as shown in the cross-sectional shape of the electrode shown in Fig. 35A, the top portion 141 of the convex portion of the protective film 4 of SiO ₂ is almost point-shaped, and from the top portion 141 to the bottom portion of the convex portion. In the case where the shape becomes round in a curved shape and the boundary between the width L1 and the width L2 is not apparent, as shown in Fig. 35B, from the bottom to the top in the vicinity of the top 141 of the convex portion. The intersection 145 of the straight line 144 connecting the tangent 143 at the top 141 of the convex portion of the curve and the bottom of the neighboring protective film 4 by approximating the side of the curve with the curve 142. Was defined as the boundary between the width L1 and the width L2.

The present invention provides an electronic component and an electronic device excellent in temperature characteristics and electrical characteristics by forming a protective film so as to cover an electrode formed on a substrate and setting the shape and thickness of the protective film in a specific range. useful.

Claims (29)

A substrate, a comb-shaped electrode provided on the upper surface of the substrate, and a protective film covering the comb-shaped electrode and having a concave-convex shape on an upper surface thereof, the top of the convex portion of the protective film on the surface of the substrate in contact with the protective film. The height to t, the height from the surface of the substrate in contact with the protective film to the bottom of the concave portion of the protective film is t1, the height from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film (t-t1). T2, and the pitch width per pitch of the uneven shape of the protective film is L, the width of the convex portion of the unevenness per pitch of the uneven shape of the protective film is L1, the width of the concave part is L2, and the pitch of the comb-shaped electrode is 1 pitch. When the pitch width is p, the width per electrode finger constituting the comb-shaped electrode is p1, the width between the electrode fingers is p2, and the film thickness of the comb-shaped electrode is h. t2 ≤ h (Where, the relationship of L ≒ p, p1 + p2 = p, L1 + L2 = L, L1 ≦ p1, L2 ≧ p2 is satisfied). The method of claim 1, In the comb-shaped electrode provided on the substrate, the relationship between the film thickness h of the comb-shaped electrode and the pitch width p per pitch of the comb-shaped electrode is 0.05 ≤ h / (2 × p) Electronic components. A substrate, a comb-shaped electrode provided on the upper surface of the substrate, and a protective film covering the comb-shaped electrode and having a concave-convex shape on an upper surface thereof, the top of the convex portion of the protective film on the surface of the substrate in contact with the protective film. The height to t, the height from the surface of the substrate in contact with the protective film to the bottom of the concave portion of the protective film is t1, the height from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film (t-t1). T2, and the pitch width per pitch of the uneven shape of the protective film is L, the width of the convex portion of the unevenness per pitch of the uneven shape of the protective film is L1, the width of the concave part is L2, and the pitch of the comb-shaped electrode is 1 pitch. When the pitch width is p, the width per electrode finger constituting the comb-shaped electrode is p1, the width between the electrode fingers is p2, and the film thickness of the comb-shaped electrode is h. h ≤ t2 (Where, the relationship of L ≒ p, p1 + p2 = p, L1 + L2 = L, L1 ≦ p1, L2 ≧ p2 is satisfied). The method of claim 3, wherein In the comb-shaped electrode provided on the substrate, the relationship between the film thickness h of the comb-shaped electrode and the pitch width p per pitch of the comb-shaped electrode is h / (2 × p) ≤ 0.05 Electronic components. The method according to claim 1 or 3, A pitch width p of the comb-tooth-shaped electrode per pitch, wherein a ratio L1 / L of the pitch width L of the protective film per pitch and the width L1 of the convex portion of the unevenness per pitch of the uneven shape of the protective film is? '; When the ratio p1 / p of the width p1 per electrode finger constituting the comb-shaped electrode is η, the relationship between η and η ' η '/ η ≤ 0.86 (Wherein the relationship of L ≒ p, p1 + p2 = p and L1 + L2 = L is satisfied). The method according to claim 1 or 3, When the center of the width L1 of the convex part of the unevenness | corrugation of the said protective film per pitch is Lc, and the center of the width p1 of the electrode finger of the comb-shaped electrode located under the convex part of the said protective film per pitch is pc, Lc and pc Is an electronic component that exists on the same straight line in plan view. The method according to claim 1 or 3, When the said board | substrate is a lithium tantalate board | substrate, and the cutting angle of this lithium tantalate board | substrate makes the rotation angle in a Z-axis direction around X axis | shaft, 38 ° ≤D ° The electronic component which was cut out from the Y board of the. The method according to claim 1 or 3, The comb-shaped electrode provided on the upper surface of the substrate and the protective film covering the comb-shaped electrode and having a concave-convex shape on the upper surface include a height t1 from the surface of the substrate in contact with the protective film to the bottom of the concave portion of the protective film. , The relationship between the pitch width p per pitch of the comb-shaped electrode, 13% ≤ t1 / (2 × p) ≤ 35% Electronic components. The method according to claim 1 or 3, The protective film is an electronic component that is silicon dioxide. And a substrate, a comb-shaped electrode provided on the upper surface of the substrate, and a protective film provided to cover the comb-shaped electrode, wherein the upper surface of the protective film is flat, from the surface of the substrate in contact with the protective film to the upper surface of the protective film. When t is the height and pitch width per pitch of the comb-shaped electrode is p, the substrate is a lithium tantalate substrate, and the cutting angle of the lithium tantalate substrate is in the Z axis direction around the X axis. If the rotation angle is set to D °, 38 ° ≤D ° It was cut out from the Y board of 13% ≤ t / (2 × p) ≤ 35% Electronic components. Claim 11 was abandoned upon payment of a setup registration fee. 11. The method of claim 10, In the comb-shaped electrode provided on the substrate, the relationship between the film thickness h of the comb-shaped electrode and the pitch width p per pitch of the comb-shaped electrode is 0.05 ≤ h / (2 × p) Electronic components. A substrate, a comb-shaped electrode provided on the upper surface of the substrate, and a protective film covering the comb-shaped electrode and having a concave-convex shape on an upper surface thereof, the top of the convex portion of the protective film on the surface of the substrate in contact with the protective film. The height to t, the height from the surface of the substrate in contact with the protective film to the bottom of the concave portion of the protective film is t1, the height from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film (t-t1). T2, and the pitch width per pitch of the uneven shape of the protective film is L, the width of the top of the convex portion of the unevenness per pitch of the uneven shape of the protective film is L1, the width of the recess is L2, and the pitch width L (L-L2) / L of (L-L2) η ', the height of the comb-shaped electrode h, the pitch width per pitch of the comb-type electrode p, electrode electrode constituting the comb-shaped electrode 1 Width per piece p1, width between the electrode fingers p2, the comb teeth before When the ratio p1 / p of the pitch p and the electrode finger width p1 1 as η, h ≤ t2 (Wherein the relationship of η'-0.3 <η≤η ', Lηp, p1 + p2 ≒ p, L1> p1 is satisfied). Claim 13 was abandoned upon payment of a registration fee. 13. The method of claim 12, The relationship of the width p2 between the protective film per pitch and the neighboring electrode fingers of the comb-shaped electrode, L1 + L2 <L or L2 <p2 (However, the relationship between L ≒ p and p1 + p2 ≒ p is satisfied). A substrate, a comb-shaped electrode provided on the upper surface of the substrate, and a protective film covering the comb-shaped electrode and having a concave-convex shape on an upper surface thereof, the top of the convex portion of the protective film on the surface of the substrate in contact with the protective film. The height to t, the height from the surface of the substrate in contact with the protective film to the bottom of the concave portion of the protective film is t1, the height from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film (t-t1). T2, and the pitch width per pitch of the irregularities of the protective film is L, the width of the top of the convex portion of the irregularities per pitch of the irregularities of the protective film is L1, the width of the recess is L2, and the width of the comb-shaped electrode When height is h, pitch width per pitch of the comb-shaped electrode is p, width per electrode finger constituting the comb-shaped electrode is p1, and width between the electrode fingers is p2, h ≤ t2 (Where, the relationship of L1 + L2 <L, L2 <p2, L1 ≦ p1, L ≒ p, p1 + p2 ≒ p) is satisfied. Claim 15 was abandoned upon payment of a registration fee. The method according to claim 12 or 14, wherein The comb-shaped electrode has a relationship between a height h of the comb-type electrode and a pitch width p per pitch of the comb-type electrode, h / (2 × p) <0.05 Electronic components. A substrate, a comb-shaped electrode provided on the upper surface of the substrate, and a protective film covering the comb-shaped electrode and having a concave-convex shape on an upper surface thereof, the top of the convex portion of the protective film on the surface of the substrate in contact with the protective film. The height to t, the height from the surface of the substrate in contact with the protective film to the bottom of the concave portion of the protective film is t1, the width from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film (t-t1). T2, and the pitch width per pitch of the uneven shape of the protective film is L, the width of the top of the convex portion of the unevenness per pitch of the uneven shape of the protective film is L1, the width of the recess is L2, and the pitch width L (L-L2) / L of (L-L2) η ', the height of the electrode finger of the comb-shaped electrode h, the pitch width per pitch of the comb-type electrode p, the electrode constituting the comb-type electrode Width p1 per finger, width p2 between the electrode fingers, and the comb When the ratio p1 / p of the p-type electrode and the electrode finger pitch p1 of one width to η, 0 <t2 <h (Wherein the relationship of η'-0.3 <η≤η ', Lηp, p1 + p2 ≒ p, L1> p1 is satisfied). Claim 17 has been abandoned due to the setting registration fee. The method of claim 16, The relationship of the width p1 between the protective film per pitch and the neighboring electrode fingers of the comb-shaped electrode, L1 + L2 <L or L1 <p1 (However, the relationship between L ≒ p and p1 + p2 ≒ p is satisfied). A substrate, a comb-shaped electrode provided on the upper surface of the substrate, and a protective film covering the comb-shaped electrode and having a concave-convex shape on an upper surface thereof, the top of the convex portion of the protective film on the surface of the substrate in contact with the protective film. The height to t, the height from the surface of the substrate in contact with the protective film to the bottom of the concave portion of the protective film is t1, the width from the top of the convex portion of the protective film to the bottom of the concave portion of the protective film (t-t1). T2, and the pitch width per pitch of the unevenness of the protective film is L, the width of the top of the convex portion of the unevenness per pitch of the unevenness of the protective film is L1, the width of the recess is L2, and the width of the comb-shaped electrode When the height of the electrode finger is h, the pitch width per pitch of the comb-shaped electrode is p, the width per electrode finger constituting the comb-shaped electrode is p1, and the width between the electrode fingers is p2, 0 <t2 <h (Where, the relationship of L1 + L2 <L, L2 <p2, L1 ≦ p1, L ≒ p, p1 + p2 ≒ p) is satisfied. Claim 19 was abandoned upon payment of a registration fee. The method of claim 16 or 18, The comb-shaped electrode has a relationship between a height h of the comb-type electrode and a pitch width p per pitch of the comb-type electrode, 0.05 ≤ h / (2 × p) Electronic components. Claim 20 was abandoned upon payment of a registration fee. The method according to any one of claims 12, 14, 16 or 18, When the said board | substrate consists of lithium tantalate, and the cutting angle of this lithium tantalate board | substrate makes the rotation angle in a Z-axis direction around X axis, 38 ° ≤D ° The electronic component cut out from the phosphorus Y board. The method according to any one of claims 12, 14, 16 or 18, When the said protective film sets the height from the surface of a board | substrate to the recessed part of the said protective film as t1, 18% ≤ t1 / (2 × p) ≤ 35% Electronic components. Claim 22 is abandoned in setting registration fee. The method according to any one of claims 12, 14, 16 or 18, The protective film is an electronic component that is silicon dioxide. The substrate, the comb-shaped electrode provided on the upper surface of this board | substrate, and the protective film which cover this comb-shaped electrode and have an uneven | corrugated shape in the upper surface, L is the pitch width per pitch of the uneven | corrugated shape of this protective film, said protective film The width of the top of the convex portion of the unevenness per pitch of the uneven shape of L1, the width of the concave portion of L2, the ratio (L-L2) / L of the pitch width L and (L-L2) η ', the comb-shaped electrode The pitch width per pitch of p, the width per electrode finger constituting the comb-shaped electrode p1, the width between the electrode finger p2, the ratio of the pitch p of the comb-shaped electrode to the width p1 of the electrode finger When p1 / p is η, η'-0.3 <η ≤ η ' (Wherein the relationship of L ≒ p, p1 + p2 = p and L1> p1 is satisfied). Claim 24 is abandoned in setting registration fee. The method of claim 23, wherein The relationship of the width p2 between the protective film per pitch and the adjacent electrode fingers of the comb-shaped electrode is L1 + L2 <L or L2 <p2 (However, the relationship between L ≒ p and p1 + p2 ≒ p is satisfied). The substrate, the comb-shaped electrode provided on the upper surface of this board | substrate, and the protective film which cover this comb-shaped electrode and have an uneven | corrugated shape in the upper surface, L is the pitch width per pitch of the uneven | corrugated shape of this protective film, said protective film The width of the top of the convex portion of the concave-convex portion of the concave-convex shape is L1, the width of the concave portion L2, the pitch width per pitch of the comb-shaped electrode p, and the width of one electrode finger constituting the comb-shaped electrode p1. When the width between the electrode fingers is p2, L1 + L2 <L, L2 <p2, and also L1 <p1 (However, the relationship between L ≒ p and p1 + p2 ≒ p is satisfied). Claim 26 is abandoned in setting registration fee. The method of claim 23 or 25, When the said board | substrate is a board | substrate which consists of lithium tantalate, and the cutting angle of this lithium tantalate board | substrate makes the rotation angle in a Z-axis direction around X axis, 38 ° ≤D ° The electronic component cut out from the phosphorus Y board. Claim 27 was abandoned upon payment of a registration fee. The method of claim 23 or 25, When the said protective film sets the height from the surface of a board | substrate to the recessed part of the said protective film, t, 18% ≤ t / (2 × p) ≤ 35% Electronic components. Claim 28 has been abandoned due to the set registration fee. The method of claim 23 or 25, The protective film is an electronic component that is silicon dioxide. An electronic device having at least one antenna and an electrical circuit electrically connected to the antenna, The electric circuit is provided with a plurality of electronic components, at least one of the plurality of electronic components is an electronic component according to any one of claims 1 to 4, 10 to 14, 16 to 18, 23 to 25.

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