KR101011150B1 - In-plane switching mode liquid crystal display device and manufacturing method of the same - Google Patents

Abstract

SUMMARY OF THE INVENTION An object of the present invention is to provide a transverse electric field type liquid crystal display device and a method of manufacturing the same, which can improve a problem in which a repair pattern and a common electrode are shorted due to a repair contact hole pattern defect.

The present invention provides a semiconductor device comprising: a gate and data wiring crossing each other on a substrate to define pixel regions; A switching element connected to the gate and the data line at a portion where the gate and the data line cross each other; A pixel electrode formed in the pixel area and connected to the switching element, and a common electrode formed to be parallel to the pixel electrode at a predetermined interval; A repair pattern extending along the data line and connected to the data line through a contact hole; And a semiconductor layer disposed below the data line and extending along the data line, wherein the semiconductor layer corresponding to the contact hole has a protrusion protruding in the width direction of the data line, and a fabrication thereof. Provide a method.

According to the present invention, the width of the semiconductor layer at the portion where the repair pattern and the data wiring are in contact with each other is widened. Therefore, the semiconductor layer functions as an etch stopper to prevent the repair pattern and the common electrode from contacting each other.

Description

In-plane switching mode liquid crystal display device and manufacturing method of the same             

1A and 1B schematically show driving of liquid crystal molecules in a voltage off / on state of a general transverse electric field type liquid crystal display device.

2 is a plan view showing a conventional substrate for a transverse electric field type liquid crystal display device.

3 is a cross-sectional view taken along the line III-III of FIG. 2;

4 is a plan view showing a transverse electric field type liquid crystal display device according to an embodiment of the present invention.

5 is an enlarged plan view of a portion A of FIG. 4.

6A-6D are cross sectional views taken along the line VI-VI of FIG. 5.

7A to 7D are cross-sectional views taken along the line VIII-VIII of FIG. 5.

<Description of the symbols for the main parts of the drawings>

216: second semiconductor layer 217: protrusion

230: data wiring 250: common electrode

260: Repair Pattern

The present invention relates to a liquid crystal display device, and more particularly, to an in-plane switching mode liquid crystal display device having a repair pattern and a manufacturing method thereof.

In general, the driving principle of the liquid crystal display device uses the optical anisotropy and polarization of the liquid crystal. Since the liquid crystal is thin and long in structure, the liquid crystal has directivity in the arrangement of molecules, and the direction of the molecular arrangement can be controlled by artificially applying an electric field to the liquid crystal. Therefore, by adjusting the molecular arrangement of the liquid crystal, light can be refracted to express image information.

The liquid crystal display is driven by forming an electric field in the liquid crystal layer according to the voltage difference between the common electrode and the pixel electrode to express the image information. The common electrode and the pixel electrode are formed on the same substrate to form a horizontal electric field in the liquid crystal layer. Transverse electric field type liquid crystal display devices are widely used because of their excellent viewing angle characteristics.

1A and 1B are cross-sectional views illustrating a general transverse electric field type liquid crystal display device, and schematically illustrate driving of the liquid crystal molecules 52 in a voltage off / on state.

As illustrated, in the conventional transverse electric field type liquid crystal display device, the pixel electrode 40 and the common electrode 45 are formed on the first substrate 10, and the transverse electric field generated by the two electrodes 40 and 45 is formed. The liquid crystal molecules 52 are changed by the electric field.                         

In the voltage-off state, as shown in FIG. 1A, no lateral electric field is formed between the two electrodes 40 and 45, so that no electric field is applied to the liquid crystal molecules 52. Therefore, the orientation change does not occur in the liquid crystal molecules 52.

On the other hand, in the voltage-on state, as shown in FIG. 1B, an electric field 56 is generated between the pixel electrode 40 and the common electrode 45. A vertical electric field is formed on the pixels and the common electrodes 40 and 45 so that the liquid crystal molecules 52a positioned therein have no change in the orientation direction, but the liquid crystal molecules 52b positioned between the common electrode 45 and the pixel electrode 40. Is arranged in parallel with the substrate by a horizontal (or lateral) electric field generated between the common electrode 45 and the pixel electrode 40.

As described above, the transverse electric field type liquid crystal display device is widely used because the liquid crystal molecules are driven by a transverse electric field generated between the pixel electrode and the common electrode.

FIG. 2 is a plan view illustrating a conventional transverse electric field type liquid crystal display device, and FIG. 3 is a cross-sectional view taken along the line III-III of FIG. 2.

As shown in the drawing, in the conventional transverse electric field type liquid crystal display device, the gate and data lines 120 and 130 defining the pixel region P orthogonal to each other on the substrate 110, and the gate and data lines 120, The thin film transistor T and the pixel and the common electrode 140 and 150 are formed in the pixel region P where the 130 crosses each other. The repair pattern 160 is formed on the data line 130.

The repair pattern 160 is formed to prevent a data signal from being transmitted due to a bad pattern of the data line 130. Since the data wire 130 has a fine line width, a problem may occur in that the data wire 130 is open when the pattern is formed, thereby forming the repair pattern 160. The repair pattern 160 is formed to have a narrower width than the data line 130. The repair pattern 160 extends along the data line 130 on the data line 130 and overlaps the data line 130. And a data line 130 and a repair contact hole 144.

The second semiconductor layer 116 is formed under the data line 130. The second semiconductor layer 116 extends and overlaps the data line 130.

However, in the conventional transverse electric field type liquid crystal display device, when a pattern defect occurs in the process of forming the repair contact hole 144, the repair contact hole 144 exposes the common electrode 150 to repair the repair pattern 160. The short circuit of the common electrode 150 may occur. Accordingly, the process yield of the transverse electric field type liquid crystal display device can be reduced.

SUMMARY OF THE INVENTION An object of the present invention is to provide a transverse electric field type liquid crystal display device and a method of manufacturing the same, which can improve a problem in which a repair pattern and a common electrode are shorted due to a repair contact hole pattern defect. .

In order to achieve the object as described above, the present invention includes a gate and data wiring crossing the substrate to define a pixel region; A switching element connected to the gate and the data line at a portion where the gate and the data line cross each other; A pixel electrode formed in the pixel area and connected to the switching element, and a common electrode formed to be parallel to the pixel electrode at a predetermined interval; A repair pattern extending along the data line and connected to the data line through a contact hole; And a semiconductor layer positioned below the data wire and extending along the data wire, wherein the semiconductor layer corresponding to the contact hole has a protrusion protruding in the width direction of the data wire, and the protrusion is adjacent to the data wire. It provides a liquid crystal display device characterized in that it extends to the edge of the common electrode.

The repair pattern may be made of a transparent conductive metal material including ITO and IZO. The switching element may include a source electrode connected to the data line, a drain electrode spaced apart from the source electrode at a predetermined interval, and a gate electrode connected to the gate line.

In another aspect, the present invention includes forming a gate wiring, a gate electrode, a common electrode on the pixel region, and forming a gate insulating film on the common electrode on a substrate on which the pixel region is defined; Sequentially depositing and patterning a semiconductor material and a metal material on the gate insulating layer to form a data line crossing the gate line, a source connected to the data line, and a drain electrode spaced apart from the source electrode at a predetermined interval, and the source Forming a first semiconductor layer under the drain electrode and a second semiconductor layer under the data wiring; Forming a passivation layer having a first contact hole exposing the data line and a second contact hole exposing the drain electrode; Forming a repair pattern connected to the data line through the first contact hole, and a pixel electrode connected to the drain electrode and parallel to the common electrode through the second contact hole; The present invention provides a method of manufacturing a liquid crystal display device, wherein protrusions protruding in the width direction of the data line are formed in the second semiconductor layer corresponding to the holes.

The protrusion may extend to an edge of the common electrode. The repair pattern may be made of a transparent conductive metal material including ITO and IZO.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

In the transverse electric field type liquid crystal display device according to the exemplary embodiment of the present invention, the width of the semiconductor layer in a portion where the repair pattern and the data line are in contact with each other is widened. Therefore, it is possible to prevent the repair pattern and the common electrode from contacting each other.

4 is a plan view illustrating a transverse electric field type liquid crystal display device according to an exemplary embodiment of the present invention, and FIG. 5 is an enlarged plan view of a portion “A” of FIG. 4.

As illustrated, the transverse electric field type liquid crystal display device according to an exemplary embodiment of the present invention includes gate and data lines 220 and 230 that define a pixel region P orthogonal to each other on a substrate 210, a gate and The thin film transistor T and the pixel and the common electrode 240 and 250 are formed in a portion where the data lines 220 and 230 cross each other. The repair pattern 260 is formed on the data line 230.

The thin film transistor T is formed on the gate electrode 221 branched to the gate wiring 220, the first semiconductor layer 215 formed on the gate electrode 221, and the data formed on the first semiconductor layer 215. A source electrode 231 branched from the wiring 230, and a drain electrode 233 spaced apart from the source electrode 231 by a predetermined interval. The thin film transistor T is driven on / off according to the scan signal transmitted to the gate electrode 221, thereby transferring the image signal transferred to the source electrode 231 to the drain electrode 233.

The pixel electrode 240 is connected to the drain electrode 233 through the drain contact hole 243. The pixel electrode 240 is a transparent conductive metal such as indium tin oxide (hereinafter referred to as ITO) or indium zinc oxide (hereinafter referred to as IZO). Made of matter.

The common electrode 250 is formed in parallel with the pixel electrode 240 at a predetermined interval, and is formed of the same material as the gate line 220 in the process of forming the gate line 220. The common electrode 250 receives a common voltage from an external power source through the common wire 255. The common electrode 250 is positioned at the edge of the pixel area P to prevent horizontal crosstalk due to signal interference generated between the pixel electrode 240 and the data line 230.

The pixel electrode 240 and the common electrode 250 formed in parallel to each other form a transverse electric field between the two electrodes 240 and 250 to drive the liquid crystal layer (not shown).

The repair pattern 260 is formed to prevent a data signal from being transmitted due to a bad pattern of the data line 230. Since the data line 230 has a fine line width, a problem may occur in that the data line 230 is open when the pattern is formed, thereby forming the repair pattern 260. The repair pattern 260 is formed of the same material as the pixel electrode 240 in the process of forming the pixel electrode 240. The repair pattern 260 is formed to have a narrower width than the data line 230, and the repair pattern 260 extends along the data line 230 on the data line 230 and overlaps the data line 230. And a data line 230 and a repair contact hole 244.

The second semiconductor layer 216 is formed under the data line 230. The second semiconductor layer 216 is positioned on the same layer as the first semiconductor layer 215. The second semiconductor layer 216 extends and overlaps the data line 230.

In the second semiconductor layer 216, protrusions 217 protruding to the pixel region P adjacent to the portion A in which the repair contact hole 244 is formed are formed. The protrusion 217 is formed such that an edge thereof protrudes up to an edge of the common electrode 250 positioned at both sides of the data line 230.

As the protrusion 217 is formed in the portion where the repair contact hole 244 is formed, the protrusion 217 functions as a kind of etch stopper, and thus the repair pattern 244 and the repair pattern 244 fail. It is possible to prevent the common electrode 250 from being shorted.

Hereinafter, a method of manufacturing a liquid crystal display substrate according to an embodiment of the present invention will be described with reference to the drawings.                     

6A to 6D and FIGS. 7A to 7D are cross-sectional views illustrating cutting lines VI-VI and VI-V of FIG. 5, respectively, illustrating a method of manufacturing a liquid crystal display substrate according to an embodiment of the present invention. It is a process cross section shown.

First, as shown in FIGS. 6A and 7A, the first metal material is deposited and patterned on the substrate 210 to form the gate electrode 221 and the common electrode 250. At this time, the metal material is patterned to form a gate wiring (see 220 in FIG. 4).

Next, as shown in FIGS. 6B and 7B, the gate insulating film 211 is formed on the substrate on which the gate electrodes and the common electrodes 221 and 250 are formed.

Next, a semiconductor layer made of pure amorphous silicon layers 215a and 216a and impurity amorphous silicon layers 215b and 216b including impurity ions (n + or p +) is formed on the gate insulating film, and the second metal is formed on the semiconductor layer. Deposit the material.

Next, the second metal material and the semiconductor layer are patterned to form source and drain electrodes 231 and 233, data lines 230, and first and second semiconductor layers 215 and 216. In this case, the impurity amorphous silicon layers 215b and 216b are etched and removed from the channel region CH of the first semiconductor layer 215 and the protrusion 217 of the second semiconductor layer. Diffraction exposure using a mask having a semi-transmissive region corresponding to (CH) and the protrusion 217, that is, a mask using a half-tone mask or a slit pattern that can reduce the dose of light It exposes by a method.

After exposure, patterns are formed to form source and drain electrodes 231 and 233 spaced apart from each other in correspondence with the semi-transmissive region, and an impurity amorphous of the first semiconductor layer 215 exposed between the source and drain electrodes 231 and 233. The silicon layer 215a is etched to form the channel region CH. Then, both edges of the impurity amorphous silicon layer 216a of the data line 230 and the second semiconductor layer 216 corresponding to the transflective region are etched to form the protrusion 217.

Meanwhile, the single layer structure of the protrusion 217 according to the exemplary embodiment of the present invention does not have to have a stacked structure corresponding to that of the channel region CH of the first semiconductor layer.

Next, as illustrated in FIGS. 6C and 7C, the protective contact 280 may be deposited and patterned to expose the drain contact hole 243 exposing the drain electrode 231 and the repair contact hole exposing the data line 230. 244).

6D and 7D, the transparent conductive metal material is deposited and patterned to form the pixel electrode 240 and the repair pattern 260.

When the process as described above is carried out, it is possible to manufacture a substrate for a liquid crystal display device according to an embodiment of the present invention.

As described above, in the transverse electric field type liquid crystal display device according to the exemplary embodiment of the present invention, the width of the semiconductor layer at the portion where the repair pattern and the data line are in contact with each other is widened. Therefore, it is possible to prevent the repair pattern and the common electrode from contacting each other.

As described above, in the present invention, the width of the semiconductor layer at the portion where the repair pattern and the data wiring are in contact with each other is widened. Therefore, the semiconductor layer functions as an etch stopper to prevent the repair pattern and the common electrode from contacting each other.

Claims (7)

Gate and data lines crossing each other on the substrate to define pixel regions; A switching element connected to the gate and the data line at a portion where the gate and the data line cross each other; A pixel electrode formed in the pixel area and connected to the switching element, and a common electrode formed to be parallel to the pixel electrode at a predetermined interval; A repair pattern extending along the data line and connected to the data line through a contact hole; A semiconductor layer positioned below the data line and extending along the data line; And wherein the semiconductor layer corresponding to the contact hole has a protrusion protruding in the width direction of the data line, and the protrusion extends to an edge of the common electrode adjacent thereto. delete The method of claim 1, The repair pattern is a liquid crystal display device made of a transparent conductive metal material including ITO, IZO. The method of claim 1, The switching element includes a source electrode connected to the data line, a drain electrode spaced apart from the source electrode at a predetermined interval, and a gate electrode connected to the gate line. Forming a gate wiring, a gate electrode, a common electrode on the pixel region, and forming a gate insulating layer on the common electrode on a substrate on which the pixel region is defined; Sequentially depositing and patterning a semiconductor material and a metal material on the gate insulating layer to form a data line crossing the gate line, a source connected to the data line, and a drain electrode spaced apart from the source electrode at a predetermined interval, and the source Forming a first semiconductor layer under the drain electrode and a second semiconductor layer under the data wiring; Forming a passivation layer having a first contact hole exposing the data line and a second contact hole exposing the drain electrode; Forming a repair pattern connected to the data line through the first contact hole, and a pixel electrode connected to the drain electrode and parallel to the common electrode through the second contact hole; And a protrusion protruding in the width direction of the data line in the second semiconductor layer positioned corresponding to the first contact hole. The method of claim 5, And wherein the protrusion extends to an edge of the common electrode. The method of claim 5, And the repair pattern is made of a transparent conductive metal material including ITO and IZO.

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