KR101005988B1 - Cooling module for manufacturing apparatus for crystal ingot and cooling method using the cooling module - Google Patents

Abstract

Disclosed are a cooling module and a cooling method of a silicon single crystal ingot manufacturing apparatus capable of shortening the cooling time of an ingot manufacturing apparatus. The cooling method of the silicon ingot manufacturing apparatus includes the steps of growing an ingot, a purge and pumping step of injecting an inert gas to cool the ingot, separating the pulling chamber for pulling and growing the ingot from the chamber and separating the cooled ingot. Providing a cooling module in the chamber while maintaining the chamber in a vacuum state, cooling air by injecting air into the chamber through the cooling module, and checking the airtight state inside the chamber. A leak checking step and opening the chamber. Here, in the chamber cooling step, the cooling module injects air into the silicon melt contained in the crucible inside the chamber so that the air heated in the silicon melt cools the hot zone part.

Monocrystalline Ingot, Czochralski (CZ), Heater Cooling Process

Description

COOLING MODULE FOR MANUFACTURING APPARATUS FOR CRYSTAL INGOT AND COOLING METHOD USING THE COOLING MODULE}

The present invention relates to a silicon single crystal ingot production apparatus, and to provide a cooling method and a cooling module of a silicon ingot production apparatus capable of shortening the cooling time of the ingot production apparatus after the single crystal ingot growth is completed.

Generally, the silicon single crystal used as a substrate for semiconductor device manufacturing is manufactured by the Czochralski method (Cz). The Czochralski method melts silicon by placing silicon in a quartz crucible and heating the crucible, and solidifying the melt as a solid on the surface of the seed single crystal while gradually pulling it while rotating the seed crystal in contact with the silicon melt. In accordance with the method for growing an ingot (ingot) having a predetermined diameter.

The silicon single crystal ingot manufacturing apparatus using the Czochralski method consists of a circular chamber and an impression furnace which grows while raising the silicon ingot, and the inside of the chamber is a crucible, a heater, a heat insulator, a crucible support shaft that melts silicon and receives a melt. The structure is provided, these structures are called hot zone (Hot zone). Most of the hot zone parts are made of graphite, and the constituents of the hot zone parts vary depending on the characteristics and the manufacturer.

Meanwhile, when the growth of the silicon single crystal ingot is completed, the ingot is separated and taken out, the temperature of the chamber is cooled to 500 ° C. or less at which oxidation does not occur, and the chamber and the hot zone parts are cleaned.

Looking at the cooling method of the existing ingot manufacturing apparatus, when the growth of the ingot is completed, a certain amount of argon (Ar) gas is injected into the impression furnace to cool the ingot, and the remaining contaminants in the manufacturing apparatus are sucked by a vacuum pump. A purge and pumping step of evacuating is performed. When the cooling of the ingot is completed in the purge and pumping steps, the chamber is cooled while the interior of the chamber is maintained in a vacuum state by cutting off the connection to the vacuum pump. When the cooling of the chamber is completed, the leak check is performed to check the airtight state inside the chamber, the chamber is released to atmospheric pressure, the chamber is opened, and the chamber and the hot zone parts are cleaned.

Generally, the quartz crucible is heated to a high temperature of 1420 ° C. or more, which is the melting point of silicon, in order to melt the silicon. That is, even if the power applied to the heater is released after the growth of the ingot is completed, the temperature inside the chamber, particularly, the central portion, is maintained at a high temperature of 1000 ° C or higher. In order to cool such a high temperature chamber temperature below 500 degreeC, it takes a long time and there exists a problem to inhibit productivity.

In particular, the conventional chamber cooling step has a problem that the cooling time is long because the heat inside the chamber is cooled by convection and radiation in a vacuum state. For example, the conventional purge and pumping step takes about 4 hours, the chamber cooling step takes about 5.5 hours, and takes more than 9.5 hours, and the entire cooling process takes about 9.5 to 10 hours.

In particular, the purge and pumping steps of the existing cooling method can ensure the quality of the silicon single crystal ingot sufficiently, and the chamber cooling step is a valueless process that does not affect the quality of the silicon single crystal ingot.

However, through the purge and pumping step, the ingot is sufficiently cooled, but the hot zone part is kept at a high temperature and cannot be removed immediately.If the chamber is opened at a high temperature, the hot zone part may be damaged by the temperature difference between the inside and the outside of the chamber. have. Therefore, if the temperature of the hot zone part is not cooled below a certain temperature (for example, 350 to 400 ° C.), the cleaning process, which is the next process of removing and cleaning the hot zone part, cannot be performed, and the existing chamber cooling step may be omitted or shortened. There was a difficult problem.

An object of the present invention for solving the above problems is to provide a cooling module and a cooling method of the silicon single crystal ingot manufacturing apparatus that can shorten the cooling time of the chamber after the growth of the ingot is completed.

According to embodiments of the present invention for achieving the above object of the present invention, the cooling method of the silicon ingot manufacturing apparatus that can shorten the cooling time of the ingot manufacturing apparatus after the single crystal ingot growth is completed, the step of growing the ingot A purge and pumping step of injecting an inert gas to cool the ingot, separating the pulling chamber for pulling and growing the ingot from the chamber and separating the cooled ingot, and maintaining the chamber in a vacuum state. Providing a cooling module, injecting air into the chamber through the cooling module to cool the chamber, a leak checking step to check the airtight state inside the chamber, and opening the chamber. . Here, in the chamber cooling step, the cooling module injects air into the silicon melt contained in the crucible inside the chamber so that the air heated in the silicon melt cools the hot zone part.

The purge and pumping step is performed for 3 to 4 hours, in which argon (Ar) gas is used. And the chamber cooling step is performed for 1.5 to 2.5 hours in a state in which the pressure of the chamber is maintained in a vacuum state of 100torr to cool the temperature inside the chamber to 350 to 400 ℃.

On the other hand, according to other embodiments of the present invention for achieving the above object of the present invention, silicon that can shorten the cooling time in the manufacturing apparatus for producing a single crystal silicon ingot by Czochralski (CZ) The cooling module of the ingot manufacturing apparatus may include a coupling cover part formed to be coupled to a chamber and a pulling chamber, and configured to be mounted to a portion to which the pulling chamber is coupled in the chamber, and provided at one side of the coupling cover part to be inside the chamber. And an air injecting part extending from the coupling cover part into the chamber to supply air and serving as a flow path for injecting the air supplied from the air pump into the chamber. Here, when the pulling chamber is removed, it is coupled to the chamber to inject air into the chamber to cool the hot zone part inside the chamber.

The air injection portion is formed to be variable in length extending into the chamber. For example, the air inlet is made of an inlet tube having a different cross-sectional area so as to be stacked.

And it is provided with an adjusting unit for varying the extension length of the air injection unit by adjusting the overlapping length of the injection tube. Here, the adjusting portion is configured to include a guide portion of the wire shape provided on one side of the injection tube and the coupling cover portion is provided with a guide support for varying the length of the guide portion and maintains a variable state. For example, the guide part penetrates through the coupling cover part and is coupled to an injection tube having the largest diameter among the air injection parts, and the guide support part is provided at one side of the coupling cover part so that the guide part is wound and the unwinding length of the guide part is provided. It has a roller shape that can be adjusted, the extension length of the air injection portion is variable according to the release length of the guide portion.

On the other hand, according to other embodiments of the present invention for achieving the above object of the present invention, the silicon ingot manufacturing apparatus that can shorten the cooling time of the ingot manufacturing apparatus after ingot manufacturing in the manufacturing apparatus for producing a single crystal silicon ingot is A chamber in which ingot manufacturing is carried out by accommodating a silicon melt, a hot zone part provided in the chamber and including a heater and a crucible for heating the chamber, and an ingot grown in the chamber at an upper portion of the chamber And a cooling module provided at one side of the chamber to discharge exhaust gas in the chamber and a cooling module coupled to the chamber to inject air into the chamber to cool the hot zone part when the pulling chamber is removed. It is configured by. Here, the cooling module is cooled by injecting air into the silicon melt contained in the crucible.

The cooling module may include a coupling cover part mounted at a portion to which the pulling chamber is coupled in the chamber and configured to seal the chamber, and an air pump provided at one side of the coupling cover part to supply air into the chamber and the coupling. It is formed to include an air inlet portion extending from the cover portion into the chamber to be a flow path for injecting air supplied from the air pump into the chamber. In addition, a coupling flange extending outward from the coupling cover portion may be formed so that the coupling cover portion is stably mounted in the chamber.

Herein, the air inlet is variably formed in an extended length, and when the cooling module is mounted in the chamber, the air inlet is formed to extend to a position adjacent to the solid-liquid interface of the silicon melt contained in the crucible. In addition, the air injection portion is connected to the coupling cover portion has a shape that gradually increases in cross-sectional area from the end in which air is introduced into the air injection portion toward the end of the air discharge. For example, the air injection unit includes an injection tube having a tubular shape having different cross sections so as to be stacked.

The exhaust unit, a vacuum pump for sucking the exhaust gas in the chamber, an exhaust line connected to the lower chamber and connecting the chamber and the vacuum pump, provided on the pipeline of the exhaust line of the vacuum pump and the chamber It comprises a main valve for selectively blocking the connection and a pressure control valve provided on the pipeline of the exhaust line to adjust the pressure in the chamber. Here, the pressure control valve is a pop off valve is used that opens when the pressure in the exhaust line reaches a predetermined threshold value.

As described above, according to the present invention, first, since the ingot is separated into the chamber is provided in the air to cool the chamber and the hot zone parts by injecting air into the chamber can effectively shorten the cooling time of the ingot manufacturing apparatus.

Second, instead of directly injecting air into the hot zone parts, air is injected into the silicon melt contained in the crucible to cool the silicon melt and the air heated to a predetermined temperature cools the hot zone parts, thereby preventing thermal shock of the hot zone parts due to temperature differences. can do.

Third, since the cooling is performed in a state in which a predetermined vacuum is maintained inside the chamber by the pressure regulating valve, the chamber and the hot zone parts may be gradually cooled, and oxidation of the hot zone parts may be prevented.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. In describing the present invention, a detailed description of well-known functions or constructions may be omitted for clarity of the present invention.

Hereinafter, a cooling method of a silicon single crystal ingot manufacturing apparatus according to an embodiment of the present invention will be described with reference to FIG. 1, which corresponds to the cooling step of FIG. 1 in the silicon single crystal ingot manufacturing apparatus and the cooling module of FIGS. 2 to 5. This section will be described. For reference, Figure 2 is a cross-sectional view for explaining a silicon single crystal ingot manufacturing apparatus 100 according to an embodiment of the present invention, Figure 3 is an embodiment of the present invention in the ingot manufacturing apparatus 100 of FIG. It is a cross-sectional view showing a separated state in which the cooling module 104 according to the mounted. 4 and 5 are cross-sectional views for describing the cooling module 104 of FIG. 3.

First, the silicon single crystal ingot 10 is grown (S11).

Referring to FIG. 2, the silicon single crystal ingot manufacturing apparatus 100 grows a cylindrical ingot 10 as the seed is rotated while being immersed in a silicon melt. The ingot manufacturing apparatus 100 includes a growth furnace section 101 through which silicon single crystals are grown, an impression furnace section 102 that raises the ingot 10 from the growth furnace section 101, and the growth furnace section 101. It consists of the exhaust part 103 which discharges exhaust gas.

The growth path 101 includes a chamber 111 that provides a space in which the ingot 10 is grown, and a crucible 113 and a crucible 113 in which a silicon melt is accommodated in the chamber 111. A heater 115 is provided around the surface to apply heat to melt the silicon.

The chamber 111 has a cylindrical structure, and is formed by combining a dome chamber 112 having a dome shape so that an upper portion of the chamber 111 is open, and a lower portion of the exhaust portion 103 is exhausted. The line 131 is combined to form an exhaust port 111a for discharging the exhaust gas. However, the present invention is not limited thereto, and the shape of the chamber 111 and the position, shape, and number of the exhaust ports 111a may be changed in various ways.

The crucible 113 is formed of a quartz material inside the direct contact with the silicon melt, and is formed of a dual structure provided with a crucible of a graphite material to prevent the quartz crucible from being changed in shape by the high temperature silicon melt.

A crucible support shaft 117 for elevating and rotating the crucible 113 is provided below the crucible 113, and the crucible support shaft 117 rotates and raises the crucible 113 to increase the amount of silicon melt. -Ensure that the liquid interface is at the same height.

The heater 115 is provided spaced apart from the crucible 113 and the crucible support shaft 117 by a predetermined interval, and is formed in a cylindrical shape so as to surround the crucible 113.

Outside the heater 115 is provided with a heat insulating member 116 to prevent the heat emitted from the heater 115 to diffuse toward the wall of the chamber 111 and to insulate the chamber 111, The top of the crucible 113 is provided with a heat shield 114.

Herein, structures such as the crucible 113, the heater 115, the heat shield 114, the heat insulating member 116, and the crucible support shaft 117 provided in the chamber 111 may be hot zone parts. It is called (Hotzone parts, H / Z parts).

The pulling path 102 is provided on the chamber 111, and comprises a cylindrical pulling chamber 121 to be able to pull the ingot 10 in the chamber 111. The pulling chamber 121 has a predetermined diameter and length so that the ingot 10 is accommodated and grows while rotating.

The lower portion of the impression chamber 121 is formed with a second impression chamber coupling part 123 to separate and mount the impression chamber 121 to the dome chamber 112, the upper portion of the dome chamber 112 A first pulling chamber coupling part 112a having a form that can be fastened with the second pulling chamber coupling part 123 is formed. In addition, the upper part of the pulling chamber 121 is provided with a rotating part (not shown) for rotating the seed crystal when the ingot 10 is grown. In addition, a gas injection hole for supplying an inert gas (for example, argon (Ar) gas) into the pulling chamber 121 after growth of the ingot 10 is terminated at an upper side of the pulling chamber 121 ( 122) is formed.

The exhaust unit 103 is connected to the lower portion of the chamber 111 and a vacuum for sucking the exhaust gas through the exhaust line 131 and the exhaust line 131 to discharge the exhaust gas inside the chamber 111. It is configured to include a pump 133. The main valve 132 is provided on the exhaust line 131 to open and close the exhaust line 131 to selectively block the connection between the vacuum pump 133 and the chamber 111.

In addition, a pressure control valve 134 is provided between the chamber 111 and the main valve 132 in the exhaust line 131 to control the pressure inside the chamber 111. The pressure regulating valve 134 is a pop off valve that opens when the pressure of the chamber 111 and the exhaust line 131 is greater than or equal to a preset threshold. That is, when the main valve 132 is opened, the chamber 111 inside the vacuum state by the suction force of the vacuum pump 133, the pressure control valve 134 is closed to the inside of the chamber 111 As the pressure increases, the vacuum is maintained inside the chamber 111 as it is opened.

Next, when the growth of the ingot 10 is completed, purge and pumping while injecting a certain amount of inert gas (eg, argon (Ar) gas) into the pulling chamber 121 to cool the ingot 10. (S12).

Here, the purge and pumping step (S12) is performed for 3 to 4 hours, preferably for 4 hours.

The purge and pumping step S12 cools the ingot 10 while injecting a predetermined amount of argon gas into the pulling chamber 121 (for example, 65 lpm) and simultaneously pulling the ingot 10 into the pulling chamber 121. In the process of sucking and exhausting the injected argon gas through the vacuum pump 133, contaminants in the pulling chamber 121 and the chamber 111 may be removed.

Next, when the purge and pumping step S12 is completed, the main valve 132 is closed to cut off the connection between the vacuum pump 133 and the chamber 111, and the inside of the chamber 111 is predetermined. The ingot 10 is taken out by separating the pulling chamber 121 in a state of being maintained in a vacuum state (S13, S14). For example, a vacuum of 100 torr is maintained in the chamber 111.

Next, as shown in FIG. 3, in the dome chamber 112, the cooling module 104 is mounted on the first pulling chamber coupling part 112a on which the pulling chamber 121 is mounted (S15).

The cooling module 104 is coupled to the first pulling chamber coupling part 112a to seal the chamber 111 and inject a predetermined air into the chamber 111 so that the chamber 111 and the hot zone part It is cooled (S16).

Specifically, the chamber cooling step (S16) is the air injected from the cooling module 104 is injected into the silicon melt contained in the crucible 113 and the injected air absorbs heat from the silicon melt to hot air Heated.

As the hot air heated in this way flows out into the exhaust line 131 through the exhaust port 111a under the chamber 111 through the hot zone part, the hot zone part is cooled.

Here, the cooling module 104 injects air into the silicon melt inside the crucible 113 without directly injecting air into the hot zone part. After the cooling module 104 is mounted, the temperature inside the chamber 111 at the initial stage of the chamber cooling step S16 becomes 1000 ° C. or more, so that a temperature difference between the air injected from the cooling module 104 and the hot zone part is present. Will occur greatly. Therefore, when the air injected from the cooling module 104 is directly injected to the hot zone part, the hot zone part may be damaged by thermal shock due to the temperature difference. According to the present invention, in order to prevent thermal shock of the hot zone part, the cooling module 104 injects air into the silicon melt. That is, the cooling module 104 is injected into the silicon melt which is the highest temperature inside the chamber 111 and becomes a heat source, and then cools the silicon melt and absorbs heat so that air heated to a predetermined temperature flows into the hot zone part. Therefore, the hot zone part may be gradually cooled without thermal shock of the hot zone part.

The hot air flowing out of the exhaust line 131 is discharged to the outside through the pressure regulating valve 134. Since the pressure regulating valve 134 is a pop off valve, the pressure of the chamber 111 and the exhaust line 131 is opened when the pressure is greater than or equal to a predetermined threshold value. That is, when the pressure of the chamber 111 and the exhaust line 131 is increased by the air injected from the cooling module 104, the pressure regulating valve 134 is opened and hot air is discharged to the outside. When the high temperature air is discharged and the pressure in the chamber 111 drops, the pressure regulating valve 134 is closed and the pressure in the chamber 111 is maintained at a predetermined level. As such, the pressure regulating valve 134 discharges a certain amount of air to the outside to prevent the pressure and the temperature inside the chamber 111 from being changed suddenly, thereby separating the chamber 111 and the hot zone part. Can be cooled slowly.

Here, the chamber cooling step (S16) is performed for 1.5 to 2.5 hours, preferably about 2 hours.

In addition, in order to melt the silicon is generally heated to a high temperature of 1420 ℃ or more after the growth of the ingot 10, the temperature inside the chamber 111 is maintained at a high temperature of 1000 ℃ or more, the purge and pumping step (S12 ), Only the temperature of the ingot 10 is sufficiently cooled and the chamber 111 and the hot zone part are still kept at a high temperature. In order to clean the chamber 111 and the hot zone parts, the temperature of the chamber 111 should be cooled to 500 ° C. or less at which oxidation does not occur, and the chamber cooling step S16 may include the chamber 111 and the hot zone parts. The temperature of is cooled to 350 to 400 ℃ or less.

Hereinafter, the structure of the cooling module 104 will be described in detail with reference to FIGS. 3 to 5.

The cooling module 104 includes an air pump 141, an air inlet 142, and a coupling cover 143, and the first chamber of the dome chamber 112 after the pulling chamber 121 is separated. It is coupled to the impression chamber coupling part 112a to inject air into the chamber 111. In particular, the cooling module 104 is formed to be coupled to the first impression chamber coupling part 112a to seal the inside of the chamber 111, so that air is injected only to the silicon melt contained in the crucible 113. Is formed.

The air pump 141 is provided at one side of the coupling cover part 143 to inject air into the chamber 111.

The coupling cover part 143 has a form of closing the opening of the first raising chamber coupling part 112a to seal the chamber 111, and the coupling cover part 143 and the first pulling chamber coupling part. A coupling flange 144 is formed along the outer circumference of the coupling cover part 143 to improve the coupling force of the 112a and stably mount the cooling module 104 and the dome chamber 112.

However, the present invention is not limited by the drawings, and the shape of the coupling cover part 143 and the coupling flange 144 may allow the cooling module 104 to be mounted on the dome chamber 112. It can be applied in various ways depending on the shape and size of the impression chamber coupling part (112a).

The air injecting unit 142 guides the air injected from the air pump 141 to the silicon melt so that air is injected only to the silicon melt contained in the crucible 113.

The air injection part 142 is formed to extend from the coupling cover part 143 into the chamber 111 so that the air injected from the air pump 141 is directly injected into the silicon melt contained in the crucible 113. It is formed to be. That is, the air inlet 142 is a solid solution of the silicon aqueous solution accommodated in the crucible 113 in the coupling cover 143 when the cooling module 104 is mounted on the first impression chamber coupling part 112a. It extends to the vicinity of the interface and has a predetermined tubular shape to prevent the injected air from spreading. For example, since the impression chamber 121 and the ingot 10 have a circular cross section, the air injection unit 142 has a circular cross section, and has a rain cylinder shape in which an air discharge portion gradually widens.

In addition, the air inlet 142 may be connected to the coupling cover 143 and may have a form in which the cross-sectional area gradually increases from the end where the air is introduced to the end where the air is discharged. This is to allow the air injected from the air injection unit 142 to be sprayed on the silicon melt and a larger area, thereby improving the cooling rate and effect of the silicon melt and allowing the cooling to be even.

In addition, the cooling module 104 is formed to be variable in length of the air inlet 142.

For example, the air injection unit 142 includes an injection tube 421 having a tube shape having a different cross-sectional area so as to be stacked on each other, and as shown in FIG. 5, the injection tube 421 is connected to each other. Each of the injection tubes 421a, 421b, 421c, 421d, and 421e have the same length but have the same cross-sectional shape, and one injection tube 421a, 421b, 421c, 421d, and 421e has a smaller size. The other injection tube 421a, 421b, 421c, 421d, and 421e having a cross-sectional area is formed to be accommodated. Here, in the following description, the reference numeral “421” is used to refer to the injection tubes, and the reference numerals “421a, 421b, 421c, 421d, and 421e” are used to refer to each injection tube in some cases. .

Here, the injection tube 421 may be a cylindrical tube having a circular cross section because the impression chamber 121 and the ingot 10 have a circular cross section. However, the present invention is not limited by the drawings, and the shape and size of the injection tube 421 may be changed in various ways.

As shown in the figure, the air injection unit 142 is formed by stacking five injection tubes 421a, 421b, 421c, 421d, and 421e, and each of the injection tubes 421a, 421b, 421c, 421d, and 421e. By adjusting the length of overlapping with each other), the extension length of the air inlet 142 may be varied. In addition, each injection tube (421a, 421b, 421c, 421d, 421e) is fastened to each other and are fastened in a continuous form to form an injection tube fastening portion 422 to form an extended form of the air injection portion 142 do.

The injection tube coupling part 422 has a structure in which injection tubes adjacent to each other (ie, injection tube and injection tube accommodated therein) 421 may be mechanically fastened to each other. For example, the injection tube 421 has a tube shape having one end bent outwardly flanged and the other end is formed with a flange bent inwardly, and thus the flanges bent inwardly of adjacent injection tubes 421. And the flange bent to the outside are engaged with each other and the injection tube 421 is continuously fastened. Here, since the injection tube 421 extends downward by its own weight, the injection tube 421 is formed such that the upper end is bent inward and the lower end is bent outward. In addition, the injection tube fastening portion 422 not only fastens and supports the injection tubes 421, but also serves as a stopper for limiting an extension length of the injection tube 421. However, the present invention is not limited thereto, and the injection tube coupling part 422 may have various shapes that can fasten, support, and extend the injection tube 421 with each other.

One side of the air injection unit 142 is provided with an extension length adjusting unit 430 for varying the extension length of the air injection unit 142 and supporting the injection tube 421.

The extension length adjusting part 430 supports the guide part 431 and the guide part 431 provided in the injection tube 421 and guide support parts 432 and 433 for adjusting the length of the guide part 431. ) Is provided. For example, the guide part 431 has a wire shape, and the guide support parts 432 and 433 have a roller shape in which the guide part 431 is wound and the release length of the guide part 431 can be adjusted and fixed. Has

The guide part 431 passes through the coupling cover part 143 and is provided at the air injection part 142. In particular, the guide part 431 is the distal end part when the air injection part 142 is extended. It is provided to support.

Here, the guide portion 431 is the outermost outermost diameter of the injection tube (421a, 421b, 421c, 421d, 421e) so that the cross-sectional area is gradually increased toward the end portion of the air injection portion 142 is discharged air It is coupled to the injection tube (421e). In addition, the guide part 431 may be coupled to a lower end of the outermost injection tube 421e. In particular, the guide part 431 may stably stabilize the injection tubes 421a, 421b, 421c, 421d, and 421e. It is provided in at least two places along the outer periphery of the outermost injection tube (421e) to be supported by. Here, in order for the guide part 431 to stably support the injection tube 421, the guide part 431 is provided at two places spaced 180 ° along the circumferential direction of the outermost injection tube 421e. . However, the present invention is not limited by the drawings, and the number and the mounting position of the guide part 431 may be applied in various ways.

The extension length adjusting part 430 is provided in the injection tube 421 and the air injection part 142 is extended by the self-weight of the injection tube 421, and the guide part 431 is the When the windings are wound around the guide supports 432 and 433, as the injection tube 421 is pulled up by the coupling cover part 143 and overlapped with each other, the extension length of the air injection part 142 is shortened.

Next, when the chamber cooling step S16 is completed, an automatic leak check step S17 is performed to check the airtight state inside the chamber 111.

The leak check step S17 is performed for about 0.5 hours.

Next, when the leak check step (S17) is completed, the inside of the chamber 111 is released to the atmospheric pressure state (S18) and the chamber 111 is opened (S19) for the chamber 111 and the hot zone parts The cleaning process is performed.

Here, in the past, in order to cool the ingot manufacturing apparatus 100 after the production of the ingot, since it has to go through the purge and pumping step (S12) and the natural cooling time of the chamber 111, it is required about 10 hours or more, but the present invention Since the hot zone part is cooled by the cooling module 104 after the purge and pumping step (S12), it takes about 6.5 hours to cool the ingot manufacturing apparatus 100, thereby effectively reducing the chamber cooling time. In the chamber cooling step (S16), since the air injected from the cooling module 104 is injected into the silicon melt, which is the highest temperature inside the chamber 111 and passes through the hot zone part, the hot zone It can be cooled slowly without the thermal shock of the part.

As described above, although described with reference to the preferred embodiment of the present invention, those skilled in the art various modifications and variations of the present invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

1 is a flow chart illustrating a cooling method of a silicon single crystal ingot manufacturing apparatus according to an embodiment of the present invention;

Figure 2 is a cross-sectional view of the silicon single crystal ingot manufacturing apparatus according to an embodiment of the present invention;

Figure 3 is a view showing a state in which the cooling module according to an embodiment of the present invention in the ingot manufacturing apparatus of Figure 2;

4 and 5 are cross-sectional views of the cooling module of FIG. 3.

<Explanation of symbols for the main parts of the drawings>

10: ingot (ingot) 100: ingot manufacturing apparatus

101: growth road part 102: impression road part

103: exhaust portion 104: cooling module

111: chamber 111a: exhaust port

112: dome chamber 112a: first impression chamber coupling part

113: crucible 114: heat shield

115: heater 116: heat insulating member

117: crucible support shaft 121: raising chamber

122: gas inlet 123: second impression chamber coupling part

131: exhaust line 132: main valve

133: vacuum pump 134: pressure regulating valve

141: air pump 142: air inlet

143: coupling cover 144: coupling flange

421, 421a, 421b, 421c, 421d, 421e: injection tube

422: injection tube fastening portion 430: extension length adjustment unit

431: guide portion 432, 433: guide support portion

Claims (19)

Growing an ingot; A purge and pumping step of injecting an inert gas to cool the ingot; Separating the pulling chamber for pulling and growing of the ingot from the chamber and separating the cooled ingot; Providing a cooling module to the chamber while maintaining the chamber in vacuum; Cooling the chamber by injecting air into the chamber through the cooling module; A leak check step for confirming an airtight state inside the chamber; And Opening the chamber; Including, The chamber cooling step is a cooling method of the silicon single crystal ingot manufacturing apparatus, characterized in that the cooling module injects air to the silicon melt contained in the crucible inside the chamber so that the air heated in the silicon melt cools the hot zone part. The method of claim 1, The purge and pumping step is a cooling method of the silicon single crystal ingot manufacturing apparatus, characterized in that performed for 3 to 4 hours. The method of claim 1, The chamber cooling step is a cooling method of the silicon single crystal ingot manufacturing apparatus, characterized in that performed for 1.5 to 2.5 hours. The method of claim 1, The chamber cooling step is a cooling method of the silicon single crystal ingot manufacturing apparatus, characterized in that for cooling the temperature in the chamber to 350 to 400 ℃. The method of claim 1, In the chamber cooling step, the pressure of the chamber is maintained in a vacuum state of 100torr silicon single crystal ingot manufacturing method. The method of claim 1, The inert gas is an argon (Ar) gas, the cooling method of the silicon single crystal ingot production apparatus. In the cooling module of the manufacturing apparatus for producing a single crystal silicon ingot by Czochralski (CZ), A coupling cover part configured to be coupled to the chamber and the pulling chamber, and configured to be mounted to a portion to which the pulling chamber is coupled in the chamber; An air pump provided at one side of the coupling cover to supply air into the chamber; And An air injecting part extending from the coupling cover part to be an inside of the chamber and serving as a flow path for injecting air supplied from the air pump into the chamber; And cooling the hot zone part inside the chamber by injecting air into the chamber when the pulling chamber is removed, thereby cooling the hot zone part inside the chamber. The method of claim 7, wherein Cooling module of the silicon single crystal ingot manufacturing apparatus, characterized in that the air inlet is formed to be variable in length extending into the chamber. The method of claim 8, The air injection unit includes an injection tube having a different cross-sectional tube shape so as to be stacked, Cooling module of the silicon single crystal ingot manufacturing apparatus characterized in that it comprises a control unit for varying the extension length of the air injection unit by adjusting the overlapping length of the injection tube. 10. The method of claim 9, The control unit is a silicon single crystal ingot manufacturing apparatus characterized in that it comprises a guide portion of the wire-shaped guide portion provided on one side of the injection tube and the coupling cover portion to vary the length of the guide portion and to maintain a variable state Cooling module. The method of claim 10, The guide part is coupled to the injection tube having the largest diameter among the air injection parts through the coupling cover part, The guide support part is provided on one side of the coupling cover part, the guide part is wound, and has a roller shape that can adjust an unwinding length of the guide part, and the extension length of the air injection unit is variable according to the unwinding length of the guide part. Cooling module for silicon single crystal ingot manufacturing equipment. In the manufacturing apparatus for producing a single crystal silicon ingot by the Czochralski method, A chamber in which ingot fabrication is performed by receiving a silicon melt; A hot zone part provided inside the chamber and including a heater and a crucible for heating the chamber; An impression chamber provided at an upper portion of the chamber to raise an ingot grown in the chamber; An exhaust unit provided at one side of the chamber to discharge exhaust gas in the chamber; And A cooling module coupled to the chamber to cool the hot zone part by injecting air into the chamber when the pulling chamber is removed; Including, The cooling module is a silicon single crystal ingot manufacturing apparatus, characterized in that for injecting air into the silicon melt contained in the crucible. The method of claim 12, The cooling module, A coupling cover portion mounted to a portion to which the pulling chamber is coupled in the chamber and configured to seal the chamber; An air pump provided at one side of the coupling cover to supply air into the chamber; And An air injecting part extending from the coupling cover part to be an inside of the chamber and serving as a flow path for injecting air supplied from the air pump into the chamber; Silicon single crystal ingot manufacturing apparatus comprising a. The method of claim 13, And a coupling flange extending outwardly from the coupling cover portion to stably mount the coupling cover portion in the chamber. The method of claim 13, The air injection unit is formed to be variable in the extended length, when the cooling module is mounted to the chamber is characterized in that the silicon single crystal ingot manufacturing apparatus characterized in that it is formed to extend to a position adjacent to the solid-liquid interface of the silicon melt contained in the crucible . The method of claim 15, The air injection unit is connected to the coupling cover portion of the silicon single crystal ingot manufacturing apparatus characterized in that the cross-sectional area gradually increases from the end where the air is introduced into the air injection portion toward the end of the discharge. The method of claim 16, The air injection unit is a silicon single crystal ingot manufacturing apparatus, characterized in that it comprises an injection tube having a different cross-sectional tube shape so as to be stacked. The method of claim 13, The exhaust unit, A vacuum pump for sucking exhaust gas inside the chamber; An exhaust line connected to the lower part of the chamber and connecting the chamber and the vacuum pump; A main valve provided on a conduit of the exhaust line to selectively block the connection between the vacuum pump and the chamber; And A pressure regulating valve provided on a conduit of the exhaust line to regulate pressure in the chamber; Silicon single crystal ingot manufacturing apparatus comprising a. The method of claim 18, The pressure regulating valve is a silicon single crystal ingot manufacturing apparatus, characterized in that the pop off valve (pop off valve) is opened when the pressure in the exhaust line reaches a predetermined threshold value.

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