KR100992379B1 - Chemical vapor depositing device - Google Patents

Abstract

The present invention relates to a chemical vapor deposition apparatus for changing the supply path of the cooling water supplied to the gas box to prevent the temperature change of the source gas and further facilitate the maintenance and replacement of the parts formed with the cooling water supply path. Chemical vapor deposition apparatus according to the invention the chamber; A susceptor disposed in the chamber and on which the substrate is seated; A showerhead disposed above the susceptor; A first manifold having a first gas inflow passage through which the first raw material gas flows; A connection block having a first connection flow path connected to the first gas inflow flow path; A second manifold having a second connection flow path connected to the first connection flow path and a second gas inflow flow path through which the second raw material gas flows; And a gas box having one end connected to the second connection channel and the second gas inflow channel, and the other end formed with a third connection channel connected to the shower head. The cooling water supplied from the outside into the first manifold is After supplying and circulating through the interior of the connection block to the gas box is configured to flow out of the first manifold through the connection block and the first manifold.

Chemical Vapor Deposition, Remote Plasma Souce, Substrate, Shower Head

Description

Chemical Vapor Deposition Device

The present invention relates to a chemical vapor deposition apparatus, and more particularly to a chemical vapor deposition apparatus for depositing a thin film on a wafer.

In general, a thin film is deposited by spin on coating using polymer and sol-gel, physical vapor deposition (PVD) using sputtering or evaporation, or chemical reaction. There are various methods such as chemical vapor deposition (CVD), vapor deposition using ion beams, and direct vapor deposition of liquid vapor. Among these, chemical vapor deposition has been widely used in recent years.

Chemical vapor deposition refers to a method of depositing source gas on a substrate by injecting various source gases into the reaction chamber and inducing a reaction between the source gases using energy such as heat, light or plasma. 1, a chemical vapor deposition apparatus according to a conventional example is disclosed.

Referring to FIG. 1, the chemical vapor deposition apparatus 100 ′ includes a chamber 10 having a chamber body 11 and a top lid 12, a susceptor 20 on which a substrate s is seated, and a substrate ( a heater 21 for heating s), a shower head 30 disposed above the susceptor 20, a gas box 70 'coupled to an upper surface of the shower head 30, and a gas box. A first manifold 40 ', a connecting manifold 50' and a second manifold 60 'coupled to the upper surface, and a plasma generator 80 for plasmalizing the source gas are provided.

Inside the gas box 70 ', a circulation passage 72' through which cooling water, for example, deionized water, circulates is formed, as shown by a dotted line in FIG. The first manifold 40 ', the connection block 50', and the second manifold 60 ', respectively, supply passages 42' and 52 for supplying cooling water to the circulation passage 72 'of the gas box. ', 63' and discharge passages 43 ', 53', and 64 'through which the circulated cooling water is discharged. In addition, the first manifold 40 ', the connection block 50' and the second manifold 60 'are formed with gas passages 41', 51 ', 61' to which the first raw material gas is supplied. In the second manifold 60 ′, a gas flow path 62 ′ through which the second raw material gas is supplied is formed. In addition, one end of the gas box 70 'is connected to the gas flow path 62' of the second manifold 60 'and the other end is formed with a gas flow path 71' connected to the shower head 30. .

In the chemical vapor deposition apparatus 100 ′ configured as described above, in order to form a thin film on a substrate, the second raw material gas and the first plasma material to be plasma-formed are introduced into the gas flow path 71 ′ of the gas box, followed by mixing. What is necessary is just to spray the raw material gas toward the board | substrate s through the shower head 30. FIG. In the thin film formation process, the temperature of the gas box is controlled by circulating the cooling water into the gas box 70 ', and the temperature of the shower head can be indirectly controlled through the gas box temperature control.

However, in the above-described chemical vapor deposition apparatus 100 ', the cooling water flow path 72 of the gas box is passed through the first manifold 40', the connecting block 50 'and the second manifold 60'. Since it is introduced into and out of '), it was difficult to maintain the temperature of the second raw material gas supplied to the gas box 70' at a desired level. This is because the first manifold 40 ', the connecting block 50' and the second manifold 60 'are also cooled by the coolant so that the first manifold 40', the connecting block 50 'and the first manifold 40' This is because the second raw material gas supplied through the second manifold 60 'is also cooled.

In addition, the cooling water is easily introduced into the gas flow path 71 'formed in the gas box 70' during maintenance or replacement of the first manifold 40 ', the connection block 50' and the second manifold 60 '. Due to the possible structural limitations, maintenance and replacement was difficult.

The present invention has been made to solve the above problems, the object of the present invention is to change the supply path of the cooling water supplied to the gas box to prevent the temperature change of the raw material gas and further maintenance and replacement of the parts formed with the cooling water supply path It is to provide a chemical vapor deposition apparatus to facilitate the operation.

In order to achieve the above object, the chemical vapor deposition apparatus according to the present invention comprises a chamber; A susceptor disposed in the chamber and on which a substrate is seated; A shower head disposed above the susceptor; A first manifold having a first gas inflow passage through which the first raw material gas flows; A connection block having a first connection flow path connected to the first gas inflow flow path; A second manifold having a second connection flow path connected to the first connection flow path and a second gas inflow flow path through which the second raw material gas flows; And a gas box having one end connected to the second connection channel and the second gas inflow channel and the other end formed with a third connection channel connected to the shower head, and supplied from the outside to the inside of the first manifold. Cooling water is supplied to the inside of the gas box through the inside of the connection block and circulated after the outflow of the first manifold through the connection block and the first manifold.

According to the present invention, since the cooling water is configured to flow into the circulation passage of the gas box through the first manifold and the connecting block, when the second raw material gas is supplied to the gas box, the second raw material gas is cooled by the cooling water and the temperature is increased. The change phenomenon can be minimized.

In addition, maintenance or replacement of the first manifold, the connecting block and the second manifold can be made much easier than in the prior art.

3 is a schematic configuration diagram of a chemical vapor deposition apparatus according to an embodiment of the present invention, Figure 4 is a schematic cross-sectional view for explaining the cooling structure of the showerhead shown in FIG.

3 and 4, the chemical vapor deposition apparatus 100 of the present embodiment is connected to the chamber 10, the susceptor 20, the shower head 30, the first manifold 40, A block 50, a second manifold 60, and a gas box 70 are provided.

The chamber 10 includes a chamber body 11 and a top lead 12 coupled to an upper side of the chamber body. A space is formed between the chamber body 11 and the top lead 12 to be isolated from the outside and to form a thin film. The side surface of the chamber body 11 is formed with a substrate outflow hole 111 through which the substrate s flows in and out.

The susceptor 20 is arranged to be elevated in the chamber 10. The substrate s is seated on the susceptor 20. And the heater 21 is built in the susceptor 20, and the board | substrate s seated on the susceptor 20 is heated at the time of thin film deposition.

The shower head 30 is disposed above the susceptor 20. The shower head 30 sprays the first raw material gas and the second raw material gas described later toward the substrate s, and a thin film is deposited on the substrate s through the injection of the raw material gas.

The first manifold 40 is disposed above the top lead 12. In the first manifold 40, a first gas inflow passage 41, a cooling water inflow passage 42, and a cooling water outlet passage 43 are formed independently of each other to penetrate both side surfaces of the first manifold 40.

The first gas inflow passage 41 is a passage through which the first raw material gas flows from the outside. The cooling water inflow passage 42 and the cooling water outlet passage 43 are passages through which cooling water flows in and out for the purpose of controlling the temperature of the gas box 70 to be described later.

The connection block 50 is coupled to the side of the first manifold 40. In the connection block 50, a first connection channel 51, a first coolant connection channel 52, and a second coolant connection channel 53 are formed independently of each other.

The first connection passage 51 is formed through both sides of the connection block 50 and is connected to the first gas inflow passage 41. The first coolant connection passage 52 and the second coolant connection passage 53 are formed to penetrate the side and bottom surfaces of the connection block 50 and are formed in an overall “L” shape. The first cooling water connection passage 52 and the second cooling water connection passage 53 are connected to the cooling water inflow passage 42 and the cooling water outlet passage 43, respectively. The first coolant connection passage 52 and the second coolant connection passage 53 are formed at the left side with respect to the virtual plane IP crossing the center of the connection block 50.

The second manifold 60 is coupled to the side of the connection block 50, the connection block 50 is disposed between the first manifold 40 and the second manifold 60. In the second manifold 60, a second connection passage 61 and a second gas inflow passage 62 are formed.

The second connection passage 61 is connected to the first connection passage 51, and the second connection passage 61 is connected to the second gas inflow passage 62. The second gas inflow passage 62 is a passage through which the second raw material gas flows from the outside and is formed to penetrate the upper and lower surfaces of the second manifold 60. However, in the present embodiment, the second manifold 60 is connected to the plasma generator 80 for converting the second raw material gas into plasma, so that the second raw material gas in the plasma state flows into the second gas inflow passage 62. .

The gas box 70 is disposed between the second manifold 60 and the showerhead 30. The first manifold 40, the connection block 50, and the second manifold 60 are all in contact with the upper surface of the gas box 70. In the gas box 70, the third connection passage 71 and the circulation passage 72 are formed independently of each other.

The third connection passage 71 is a passage for delivering the first raw material gas and the second raw material gas in the plasma state to the shower head 30. One end of the third connection passage 71 is directly connected to the second gas inflow passage 62, and the first raw material gas and the second raw material gas in a plasma state are mixed and introduced into the third connecting channel 71. The other end of the third connection passage 71 is connected to the shower head 30 so that the first raw material gas and the second raw material gas in the plasma state are sprayed toward the substrate s through the shower head 30. It becomes possible.

The circulation passage 72 is a passage through which cooling water flows in and then flows out. Both ends of the circulation passage 72 are formed to be opened on the upper surface of the gas box 70, and are connected to the first coolant connection passage 52 and the second coolant connection passage 53, respectively. Therefore, the coolant introduced through the first coolant connection channel 52 flows out through the circulating flow path 72 as shown by the arrow in FIG. 4 and then flows out to the second coolant connection channel 53.

In the chemical vapor deposition apparatus 100 configured as described above, the cooling water does not flow into the gas box 70 through the second manifold 60 and passes through the first manifold 40 and the connection block 50. It is configured to flow into the circulation passage 72 of the gas box 70. Therefore, when the second raw material gas is supplied to the gas box 70, the second raw material gas is cooled by the cooling water, thereby minimizing a change in temperature.

In addition, since the first cooling water connection passage 52 and the second coolant connection passage 53 of the connection block are disposed away from the third connection passage 71 of the gas box, the first manifold 40 and the connection block ( 50) and the coolant remaining in the first coolant connection channel 52 and the second coolant connection channel 53 when the maintenance or replacement of the second manifold 60 is introduced into the third connection channel 71 of the gas box. Can be effectively prevented. Therefore, maintenance or replacement of the first manifold 40, the connection block 50 and the second manifold 60 can be made much easier than in the prior art.

As mentioned above, the present invention has been described in detail with reference to preferred embodiments, but the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the technical idea of the present invention. It is obvious.

1 is a schematic configuration diagram of a chemical vapor deposition apparatus according to a conventional example.

FIG. 2 is a schematic cross-sectional view for describing a cooling structure of the shower head shown in FIG. 1.

Figure 3 is a schematic diagram of a chemical vapor deposition apparatus according to an embodiment of the present invention.

4 is a schematic cross-sectional view for describing a cooling structure of the shower head shown in FIG. 3.

<Description of the symbols for the main parts of the drawings>

10 ... Chamber 20 ... Susceptor

21.Heater 30 ... Shower head

40 First manifold 41 First first gas inlet

42.Cooling water inflow channel 43.Cooling water inflow channel

50 ... connecting block 51 ... first connection

52 ... first coolant connection channel 53 ... second coolant connection channel

60 ... second manifold 61 ... second connection

62.Gas box for the second gas inlet 70

71 ... 3rd connecting channel 72 ... circulating channel

80 ... plasma generator 100 ... chemical vapor deposition system

Claims (3)

chamber; A susceptor disposed in the chamber and on which a substrate is seated; A shower head disposed above the susceptor; A first manifold having a first gas inflow passage through which the first raw material gas flows; A connection block having a first connection flow path connected to the first gas inflow flow path; A second manifold having a second connection flow path connected to the first connection flow path and a second gas inflow flow path through which the second raw material gas flows; And A gas box having one end connected to the second connection channel and the second gas inflow channel and the other end formed with a third connection channel connected to the shower head; Cooling water supplied to the inside of the first manifold from the outside is supplied into the gas box through the inside of the connection block and circulated to the outside of the first manifold through the connection block and the first manifold. Chemical vapor deposition apparatus, characterized in that. The method of claim 1, The first manifold is formed with a coolant inflow channel and a coolant flow channel in which the coolant flows in and out independently. In the connection block, a first coolant connection channel and a second coolant connection channel which are respectively connected to the coolant inlet channel and the coolant outlet channel are independently formed. The gas box is a chemical vapor deposition apparatus, characterized in that both ends are formed with a circulating flow path connected to each of the first coolant connection flow path and the second coolant connection flow path. 3. The method of claim 2, The connecting block is disposed between the first manifold and the second manifold, And the first cooling water connection channel and the second cooling water connection channel are formed through the side and bottom surfaces of the connection block, respectively.

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