KR100982850B1 - 기판을 주입하는 방법 및 상기 방법을 수행하기 위한 이온 주입기 - Google Patents

기판을 주입하는 방법 및 상기 방법을 수행하기 위한 이온 주입기 Download PDF

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Publication number
KR100982850B1
KR100982850B1 KR1020047016179A KR20047016179A KR100982850B1 KR 100982850 B1 KR100982850 B1 KR 100982850B1 KR 1020047016179 A KR1020047016179 A KR 1020047016179A KR 20047016179 A KR20047016179 A KR 20047016179A KR 100982850 B1 KR100982850 B1 KR 100982850B1
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KR
South Korea
Prior art keywords
substrate
raster
scans
uniformity
injection
Prior art date
Application number
KR1020047016179A
Other languages
English (en)
Korean (ko)
Other versions
KR20040097335A (ko
Inventor
에드리안 무어렐
버나드 해리슨
피터 에드워즈
피터 카인더슬레이
타카오 사카세
마빈 파레이
쉬우 사토
제프리 라이딩
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/119,290 external-priority patent/US6956223B2/en
Priority claimed from US10/251,780 external-priority patent/US6908836B2/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20040097335A publication Critical patent/KR20040097335A/ko
Application granted granted Critical
Publication of KR100982850B1 publication Critical patent/KR100982850B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • X-Ray Techniques (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020047016179A 2002-04-10 2003-03-21 기판을 주입하는 방법 및 상기 방법을 수행하기 위한 이온 주입기 KR100982850B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/119,290 US6956223B2 (en) 2002-04-10 2002-04-10 Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
US10/119,290 2002-04-10
US10/251,780 US6908836B2 (en) 2002-09-23 2002-09-23 Method of implanting a substrate and an ion implanter for performing the method
US10/251,780 2002-09-23
PCT/GB2003/001222 WO2003088299A2 (en) 2002-04-10 2003-03-21 A method of implanting a substrate and an ion implanter for performing the method

Publications (2)

Publication Number Publication Date
KR20040097335A KR20040097335A (ko) 2004-11-17
KR100982850B1 true KR100982850B1 (ko) 2010-09-16

Family

ID=29253953

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047016179A KR100982850B1 (ko) 2002-04-10 2003-03-21 기판을 주입하는 방법 및 상기 방법을 수행하기 위한 이온 주입기

Country Status (7)

Country Link
EP (1) EP1493171A2 (zh)
JP (1) JP4347068B2 (zh)
KR (1) KR100982850B1 (zh)
CN (1) CN100401449C (zh)
AU (1) AU2003214435A1 (zh)
TW (1) TWI319894B (zh)
WO (1) WO2003088299A2 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6908836B2 (en) 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7282427B1 (en) 2006-05-04 2007-10-16 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7049210B2 (en) * 2002-09-23 2006-05-23 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
GB2432039B (en) * 2004-01-09 2009-03-11 Applied Materials Inc Improvements relating to ion implantation
US7473909B2 (en) * 2006-12-04 2009-01-06 Axcelis Technologies, Inc. Use of ion induced luminescence (IIL) as feedback control for ion implantation
TW201133536A (en) * 2010-03-16 2011-10-01 Kingstone Semiconductor Co Ltd Ions injection system and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5898179A (en) 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
WO2000005744A1 (en) * 1998-07-21 2000-02-03 Applied Materials, Inc. Ion implantation beam monitor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389793A (en) * 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
US4980562A (en) * 1986-04-09 1990-12-25 Varian Associates, Inc. Method and apparatus for high efficiency scanning in an ion implanter
US4775796A (en) * 1987-01-06 1988-10-04 Purser Kenneth H Treating workpieces with beams
US5886356A (en) * 1997-03-17 1999-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Automatic supervision system on the ion beam map for ion implantation process
JP3341749B2 (ja) * 1999-12-28 2002-11-05 日新電機株式会社 イオン注入方法およびイオン注入装置
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5898179A (en) 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
WO2000005744A1 (en) * 1998-07-21 2000-02-03 Applied Materials, Inc. Ion implantation beam monitor

Also Published As

Publication number Publication date
WO2003088299A2 (en) 2003-10-23
CN100401449C (zh) 2008-07-09
JP2005522843A (ja) 2005-07-28
CN1647236A (zh) 2005-07-27
TWI319894B (en) 2010-01-21
KR20040097335A (ko) 2004-11-17
AU2003214435A8 (en) 2003-10-27
JP4347068B2 (ja) 2009-10-21
WO2003088299A3 (en) 2004-01-08
EP1493171A2 (en) 2005-01-05
TW200402096A (en) 2004-02-01
AU2003214435A1 (en) 2003-10-27

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