KR100982741B1 - 이면조사형 촬상소자 - Google Patents
이면조사형 촬상소자 Download PDFInfo
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- KR100982741B1 KR100982741B1 KR1020057012634A KR20057012634A KR100982741B1 KR 100982741 B1 KR100982741 B1 KR 100982741B1 KR 1020057012634 A KR1020057012634 A KR 1020057012634A KR 20057012634 A KR20057012634 A KR 20057012634A KR 100982741 B1 KR100982741 B1 KR 100982741B1
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- 238000012545 processing Methods 0.000 claims description 21
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- 238000000034 method Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 5
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- 238000002834 transmittance Methods 0.000 description 17
- 239000012535 impurity Substances 0.000 description 9
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/14843—Interline transfer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
파장(nm) | 흡수계수 | 투과율(20㎛) | 투과율(30㎛) |
400 | 5.337 | 4.39954×10-47 | 2.92×10-70 |
450 | 2 | 4.24835×10-18 | 8.76×10-27 |
500 | 1.11 | 2.28382×10-10 | 3.45×10-15 |
550 | 6.93×10-1 | 9.50764×10-7 | 9.27×10-10 |
600 | 4.81×10-1 | 6.69208×10-5 | 5.47×10-7 |
650 | 3.16×10-1 | 0.001792758 | 7.59×10-5 |
700 | 2.19×10-1 | 0.012475357 | 0.001393 |
750 | 1.52×10-1 | 0.047834889 | 0.010462 |
800 | 9.49×10-2 | 0.149868056 | 0.058018 |
850 | 6.24×10-2 | 0.286848809 | 0.153631 |
Claims (8)
- 입사선이 입사하는 입사면측에 설치되고, 상기 입사선을 신호전하로 변환하며, 2차원 배열을 구성하는 복수의 화소의 각각에 대하여 설치된 변환부;상기 변환부로부터 상기 입사면과는 반대의 표면측으로 연장되고, 상기 변환부에서 발생한 신호전하를 수집하는 전하수집부;상기 반대의 표면측에 설치되고, 상기 전하수집부에서 수집된 신호전하를 처리하는 전하처리부 및상기 변환부와 상기 전하처리부의 사이에 설치되고, 상기 변환부로부터 상기 전하처리부로의 상기 신호전하의 유입을 억제하는 억제영역을 구비하여 이루어진 것을 특징으로 하는 이면조사형 촬상소자.
- 제 1 항에 있어서,상기 변환부, 상기 전하수집부, 상기 전하처리부 및 상기 억제영역은 반도체 재료로 이루어지고,상기 변환부는 제1의 도전형을 가지고,상기 전하수집부는 제2의 도전형을 가지며,상기 억제영역은, 상기 제1의 도전형을 가지고, 상기 전하처리부가 그 안에 매입되며, 전하수집부가 관통하여 있는 전하저지층을 구비하는 것을 특징으로 하는 이면조사형 촬상소자.
- 제 2 항에 있어서,상기 억제영역은 제2의 도전형을 가지고, 상기 변환부와 상기 전하저지층과의 사이에 개재되고, 상기 전하수집부의 입사면측의 단부와 연속하는 전하수집층을 더 구비하는 것을 특징으로 하는 이면조사형 촬상소자.
- 제 3 항에 있어서, 상기 전하처리부는 상기 신호전하를 아날로그 신호로부터 디지털 신호로 변환하는 A/D변환기인 것을 특징으로 하는 이면조사형 촬상소자.
- 제 3 항에 있어서, 상기 전하처리부는 각 화소 내부 또는 그 근방에 설치되고, 상기 신호전하를 축적하는 신호전하 축적부인 것을 특징으로 하는 이면조사형 촬상소자.
- 제 1 항에 있어서, 상기 입사선은 빛이고 또한 상기 입사면에 배치되며, 상기 입사면으로부터 상기 전하처리부에 투과하여 상기 전하처리부에서 상기 신호전하와 동종의 전하를 발생시키는 파장의 빛을 차단하는 광학필터를 더 구비하는 것을 특징으로 하는 이면조사형 촬상소자.
- 제 1 항의 이면조사형 촬상소자를 구비하는 전자현미경.
- 제 1 항의 이면조사형 촬상소자를 구비하는 촬영장치.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00000117 | 2003-01-06 | ||
JP2003000117 | 2003-01-06 | ||
PCT/JP2003/016862 WO2004061965A1 (ja) | 2003-01-06 | 2003-12-26 | 裏面照射型撮像素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050088155A KR20050088155A (ko) | 2005-09-01 |
KR100982741B1 true KR100982741B1 (ko) | 2010-09-16 |
Family
ID=32708761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020057012634A KR100982741B1 (ko) | 2003-01-06 | 2003-12-26 | 이면조사형 촬상소자 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7345268B2 (ko) |
EP (1) | EP1583149A4 (ko) |
KR (1) | KR100982741B1 (ko) |
CN (1) | CN100511691C (ko) |
AU (1) | AU2003292663A1 (ko) |
WO (1) | WO2004061965A1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070062982A (ko) | 2004-09-21 | 2007-06-18 | 가부시키가이샤 시마즈세이사쿠쇼 | 이면 조사형 촬상소자 |
WO2007138679A1 (ja) | 2006-05-30 | 2007-12-06 | Shimadzu Corporation | 質量分析装置 |
US20080079108A1 (en) * | 2006-09-29 | 2008-04-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for Improving Sensitivity of Backside Illuminated Image Sensors |
TWI479887B (zh) * | 2007-05-24 | 2015-04-01 | Sony Corp | 背向照明固態成像裝置及照相機 |
US8464952B2 (en) * | 2009-11-18 | 2013-06-18 | Hand Held Products, Inc. | Optical reader having improved back-illuminated image sensor |
US11050956B2 (en) * | 2019-03-29 | 2021-06-29 | Pixart Imaging Inc. | Image sensor and method for increasing signal-noise-ratio thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000324400A (ja) | 1999-05-13 | 2000-11-24 | Hitachi Ltd | 電子線像撮像装置及び電子顕微鏡 |
JP2001345441A (ja) | 2000-03-28 | 2001-12-14 | Hideki Muto | 高速撮像素子及び高速撮影装置 |
JP2002033469A (ja) | 2000-07-17 | 2002-01-31 | Nec Corp | 固体撮像装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US3864722A (en) * | 1973-05-02 | 1975-02-04 | Rca Corp | Radiation sensing arrays |
JPS59108465A (ja) * | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | 固体撮像素子 |
US4656519A (en) * | 1985-10-04 | 1987-04-07 | Rca Corporation | Back-illuminated CCD imagers of interline transfer type |
US4774557A (en) * | 1986-05-15 | 1988-09-27 | General Electric Company | Back-illuminated semiconductor imager with charge transfer devices in front surface well structure |
JPH0982832A (ja) | 1995-09-20 | 1997-03-28 | Shinko Electric Ind Co Ltd | 半導体パッケージの製造方法 |
JPH0982932A (ja) * | 1995-09-20 | 1997-03-28 | Hitachi Ltd | 固体撮像素子 |
JP2907125B2 (ja) * | 1996-06-11 | 1999-06-21 | 日本電気株式会社 | 裏面照射型固体撮像素子の製造方法 |
JP3916823B2 (ja) * | 1999-04-07 | 2007-05-23 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法、並びにフラットパネル型イメージセンサ |
EP1109229A3 (en) * | 1999-12-14 | 2008-03-26 | Fillfactory N.V. | Buried, fully depletable, high fill factor photodiodes |
JP3571982B2 (ja) * | 2000-01-27 | 2004-09-29 | キヤノン株式会社 | 固体撮像装置及びそれを備えた固体撮像システム |
DE60104000T2 (de) * | 2000-03-28 | 2005-06-30 | Link Research Corp. | Schnelle abbildungsvorrichtung und schnelle fotografische vorrichtung |
JP4736173B2 (ja) * | 2000-10-27 | 2011-07-27 | 株式会社ニコン | 撮像装置 |
-
2003
- 2003-12-26 AU AU2003292663A patent/AU2003292663A1/en not_active Abandoned
- 2003-12-26 KR KR1020057012634A patent/KR100982741B1/ko active IP Right Grant
- 2003-12-26 CN CNB2003801097540A patent/CN100511691C/zh not_active Expired - Fee Related
- 2003-12-26 EP EP03768294A patent/EP1583149A4/en not_active Withdrawn
- 2003-12-26 US US10/541,411 patent/US7345268B2/en not_active Expired - Lifetime
- 2003-12-26 WO PCT/JP2003/016862 patent/WO2004061965A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000324400A (ja) | 1999-05-13 | 2000-11-24 | Hitachi Ltd | 電子線像撮像装置及び電子顕微鏡 |
JP2001345441A (ja) | 2000-03-28 | 2001-12-14 | Hideki Muto | 高速撮像素子及び高速撮影装置 |
JP2002033469A (ja) | 2000-07-17 | 2002-01-31 | Nec Corp | 固体撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
CN100511691C (zh) | 2009-07-08 |
CN1748313A (zh) | 2006-03-15 |
US20060255240A1 (en) | 2006-11-16 |
EP1583149A1 (en) | 2005-10-05 |
EP1583149A4 (en) | 2010-04-14 |
KR20050088155A (ko) | 2005-09-01 |
WO2004061965A1 (ja) | 2004-07-22 |
AU2003292663A1 (en) | 2004-07-29 |
US7345268B2 (en) | 2008-03-18 |
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