KR100977146B1 - Fluid supply unit and substrate treating apparatus having the same - Google Patents

Abstract

The fluid supply unit includes a fluid distribution member having a flow path through which fluid flows, a temperature control unit for heating the fluid distribution member, and a fixing member protecting the temperature control unit. The fixing member is provided outside the temperature control unit to fix the temperature control unit and covers the upper end of the temperature control unit. Accordingly, since the temperature controller is sealed between the fixing member and the fluid distribution member, it is possible to prevent damage to the temperature controller and to maintain the temperature of the fluid uniformly.

Description

Fluid supply unit and substrate processing apparatus having the same {FLUID SUPPLY UNIT AND SUBSTRATE TREATING APPARATUS HAVING THE SAME}

The present invention relates to an apparatus for manufacturing a semiconductor substrate, and more particularly to a fluid supply unit for supplying a fluid for processing a semiconductor substrate and a substrate processing apparatus having the same.

Chemical Vapor Deposition (CVD) apparatus is one of the devices for manufacturing a semiconductor device, and forms a predetermined thin film on the substrate surface.

High Density Plasma Chemical Vapor Deposition apparatus (HDP CVD) is a kind of chemical vapor deposition apparatus that excites process gases by radio frequency (RF) to form thin films at low temperatures. Deposit on the substrate surface.

Specifically, the HDP CVD apparatus includes a chamber providing a space where chemical vapor deposition is performed, a gas ring for supplying a reaction gas, and a plurality of injection nozzles for injecting a reaction gas into a substrate provided in the chamber. The gas ring has a ring shape, is located above the substrate, and surrounds the substrate in plan view. The injection nozzle is coupled to the gas ring and receives a reaction gas from the gas ring.

The outer side of the gas ring is provided with a wall heater and a band for protecting the wall heater to maintain a constant temperature of the reaction gas introduced into the gas ring. The wall heater surrounds the outer wall of the gas ring and heats the gas ring. Inside the wall heater is applied a thermal compound in the form of a powder to improve thermal conductivity. The band has a ring shape to surround the wall heater. In general, since the band covers only the outer side of the wall heater, the upper end of the wall heater is exposed to the outside. As a result, the thermal compound may be lost, causing damage to the wall heater.

It is an object of the present invention to provide a fluid supply unit capable of stably maintaining the temperature of the fluid.

It is also an object of the present invention to provide a substrate processing apparatus having the fluid supply unit.

The present invention provides a fluid supply unit. The fluid supply unit includes a gas distribution ring for providing a flow path for the gas to move; A temperature adjusting unit provided outside the gas distribution ring and maintaining the temperature of the gas introduced into the flow path by heating the gas distribution ring; And a band provided at an outer side of the temperature control part to surround the temperature control part, and a covering extending from an upper end of the body ring to an inner side where the temperature control part is located to cover the upper end part of the temperature control part. .
The temperature control part includes a heater part provided outside the gas distribution ring to surround the outer wall of the gas distribution ring and generate heat.
The temperature control part further includes a heat conductive layer applied to one surface of the heater part and provided between the heater part and the gas distribution ring to improve conductivity of heat generated from the heater part.
The covering covers the upper end of the heater part and the heat conductive layer to seal the heater part and the heat conductive layer between the body ring and the gas distribution ring.
The gas distribution ring and the band have a ring shape.
The thermal conductive layer is made of powder.
The heater part is formed in a sheet form.
In addition, the present invention provides a substrate processing apparatus. The substrate processing apparatus includes a chamber providing a process space; A chucking member provided in the process space and supporting the substrate; And a fluid supply unit positioned outside the chucking member in plan view and supplying a gas for processing the substrate, wherein the fluid supply unit comprises: a gas distribution ring providing a flow path through which the gas moves; A temperature adjusting unit provided outside the gas distribution ring and maintaining the temperature of the gas introduced into the flow path by heating the gas distribution ring; And a band provided at an outer side of the temperature control part to surround the temperature control part, and a covering extending from an upper end of the body ring to an inner side where the temperature control part is located to cover the upper end part of the temperature control part. do.
The fluid supply unit is coupled to the gas distribution ring and is located between the gas distribution ring and the chucking member when viewed from the top of the gas distribution ring, and receives the gas from the gas distribution ring. It further comprises at least one side nozzle for spraying on.

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According to the present invention described above, the fixing member covers the upper end of the heater portion and the heat conductive layer located inside. Accordingly, the substrate processing apparatus can prevent damage to the heater portion and loss of the heat conductive layer, maintain a constant fluid temperature in the fluid distribution member, and improve the yield of the product.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Referring to FIG. 1, the substrate processing apparatus 700 of the present invention performs a semiconductor process for processing a wafer. Hereinafter, a high density plasma chemical vapor deposition (HDP CVD) process will be described as an example of the semiconductor process.

The substrate processing apparatus 700 includes a reaction unit 100, a first gas supply unit 200, a coupling plate 310, a temperature control member 320, a band 330, a cover 400, and a plasma generating unit ( 500, and a second gas supply unit 600.

The reaction unit 100 includes a chamber 110, a chucking member 120, and an exhaust line 130. Specifically, the chamber 110 provides a process space PS in which a substantial deposition process for processing a wafer is performed. In one example of the present invention, the chamber 110 has a cylindrical shape, and an upper portion thereof is opened.

The chucking member 120 on which the wafer is mounted is installed in the process space PS. The chucking member 120 chucks the wafer and maintains the temperature of the wafer at an appropriate temperature. The chucking member 120 includes a support plate 121, a drive shaft 123, and a driver 125.

Specifically, the wafer is placed side by side with the support plate 121 on the support plate 121. One end of the driving shaft 123 is coupled to the lower portion of the support plate 121, and is connected to the driver 125 of the driving shaft 123. The driver 125 generates a rotational force to rotate the drive shaft 123, and the support plate 121 rotates by the rotation of the drive shaft 123.

The exhaust line 130 is provided below the chamber 110 to exhaust the gas in the process space PS, and adjust the pressure of the process space PS. That is, the exhaust line 130 is connected to the exhaust hole 111 formed in the bottom surface of the chamber 110, and is connected to an external pump (not shown). In the process, gas and reaction by-products, etc., filled in the process space PS of the chamber 110 are discharged to the outside through the exhaust line 130 via the exhaust hole 111. In addition, the exhaust line 150 discharges the gas inside the chamber 110 to the outside to maintain the inside of the chamber 110 in a vacuum state. The exhaust line 150 may be provided with a control valve 151 for controlling the discharge of the gas and reaction by-products through the exhaust line 150.

On the other hand, one side of the chamber 110 is provided with a door 141 for opening and closing the passage 113 formed on the side wall of the chamber 110. That is, the wafer is introduced into the process space PS through the passage 113 and is drawn out of the process space PS through the passage 113. The door 141 is positioned adjacent to the passage 113 and opens and closes the passage 113 by driving of the door driver 143.

An upper portion of the chamber 110 is provided with the first gas supply unit 200 that provides a reactive gas for the deposition process.

2 is a view showing the first gas supply unit and the temperature control unit and the band shown in Figure 1, Figure 3 is a perspective view showing the band in Figure 1, Figure 4 is a gas distribution ring and temperature control shown in Figure 1 Sectional drawing which shows a part and a band.

1 and 2, the first gas supply unit 200 includes a gas distribution ring 210 that provides a movement path of the reaction gas, and a plurality of first and second side nozzles that inject the reaction gas. (220, 230).

Specifically, the gas distribution ring 210 is provided on the upper end of the chamber 110, has a ring shape, and surrounds the chucking member CU. First and second gas flow paths 211 and 215 through which the reaction gas moves are formed in the gas distribution ring 210. The first gas flow passage 211 is formed in the direction in which the gas distribution ring 210 extends to have the same ring shape as the gas distribution ring. As an example of the present invention, a silicon-containing gas including silane (SiH ₄ ) may be used as the reaction gas flowing into the first gas flow path 211.

The first gas flow path 211 is connected to the first gas supply line 241, and the first gas supply line 241 provides the reaction gas to the first gas flow path 211. The reaction gas flowing into the first gas passage 211 moves along the first passage 211. The first gas supply line 241 is provided with a first gas valve 241a for adjusting the flow rate of the reaction gas.

On the other hand, the second gas flow path 215 is positioned to be spaced apart from the first flow path 211 and surrounds the first gas flow path 211. In one example of the present invention, an oxygen-containing gas may be used as the reaction gas flowing into the second gas passage 215. The second gas flow path 215 is connected to the second gas supply line 243, and the second gas supply line 243 provides a reaction gas to the second gas flow path 215. The second gas supply line 243 is provided with a second gas valve 243a for controlling the flow rate of the reaction gas.

The plurality of first and second side nozzles 220 and 230 are coupled to the inside of the gas distribution ring 210. The first and second side nozzles 220 and 230 receive the reaction gas from the gas distribution ring 210 and inject the reaction gas. In detail, the gas distribution ring 210 has a first connection passage 213 connected to the first gas passage 211 and the first side nozzle 220. The reaction gas introduced into the first gas flow passage 211 is provided to the first side nozzle 220 through the first connection flow passage 213. In addition, the gas distribution ring 210 is formed with a second connection flow path 217 connected to the second gas flow path 215 and the second side nozzle 230. The reaction gas flowing into the second gas flow passage 215 is provided to the second side nozzle 230 through the second connection flow passage 217.

On the other hand, the coupling plate 310 is provided between the first gas supply unit 200 and the chamber 110. The coupling plate 310 is coupled to the upper end of the chamber 110 and the first gas supply unit 200. The coupling plate 310 seals the first and second gas flow paths 211 and 215 of the first gas supply unit 201 so that the reaction gas is separated from the first and second gas flow paths 211 and 215. To prevent leakage.

The outer side of the gas distribution ring 210 is provided with a temperature control unit 320 for maintaining the temperature of the reaction gas introduced into the gas distribution ring 210 at an appropriate temperature. The temperature control unit 320 includes a heater unit 321 for generating heat by receiving power from the outside, and a thermal conductive layer 323 for improving the thermal conductivity of the heater unit 321.

The heater unit 321 has a sheet shape to surround the gas distribution ring 210, and heat the gas distribution ring 210 to appropriately react the reaction gas in the first and second gas flow paths 211 and 215. Keep it at A wall heater may be used as the heater 321.

The heat conductive layer 323 is coated inside the heater 321. The thermal conductive layer 323 is interposed between the heater 321 and the gas distribution ring 210 to improve the thermal conductivity from the heater 321 to the gas distribution ring 210. In one example of the present invention, the thermal conductive layer 323 is made of a thermal compound (powder compound).

2 and 3, the band 330 is provided on the outside of the heater 321. The band 330 has a ring shape and surrounds the heater 321. The band 330 minimizes heat loss of the heater 321, protects the heater 321, and fixes the heater 321 to the outside of the gas distribution ring 210.

In detail, the band 330 includes a body ring 331 and a covering 333. The body ring 331 has a ring shape, surrounds an outer surface of the heater unit 321, and covers an outer surface of the heater unit 321.

3 and 4, the covering 333 extends inward from an upper end of the body ring 331 and has a ring shape. The covering 333 covers each upper end of the heater 321 and the heat conductive layer 323 provided inside the body ring 331 so that the heater 321 and the heat conductive layer 323 are covered. Prevent exposure to the outside.

In particular, since the thermal conductive layer 323 is formed in a powder form, it is easy to be lost when exposed to the outside, and since the heater 323 is made of a thin sheet material, it is easily damaged by an external impact. The band 330 seals the heater 321 and the heat conductive layer 323 inside the body ring 331 by the covering 333, thereby damaging the heater 321 and the heat conductive layer. The loss of 323 can be prevented. Accordingly, since the temperature controller 320 can stably provide the heat to the gas distribution ring 210, the substrate processing apparatus 700 receives the reaction gas introduced into the gas distribution ring 210. It can be stably maintained at an appropriate temperature.

In this embodiment, the band 330 is provided separated into two pieces, but may be provided separated into more pieces, two or more pieces may not be separated.

Referring again to FIGS. 1 and 2, the temperature control unit 320 and the band 330 are seated on the coupling plate 310, and the coupling plate 310 together with the gas distribution ring 210. Is fixed to.

On the other hand, the cover 400 is provided on the upper portion of the first gas supply unit 201. The cover 400 faces the bottom surface of the chamber 110 and is coupled to the first gas supply unit 201 to seal the process space PS of the chamber 110.

An upper portion of the cover 400 is provided with the plasma generating member 500 for making the reaction gas supplied into the chamber 100 into a plasma state. The plasma generating member 500 includes a coil 510 provided on an upper surface of the cover 400 to form an electromagnetic field, and a fixture 520 for fixing the coil 510. A high frequency power source (not shown) is connected to the coil 510. In one example of the present invention, the cover 400 is made of an insulator material, for example, aluminum oxide or ceramic material, to which high frequency energy is transferred.

On the other hand, the second gas supply unit 600 is installed in the central portion of the cover 400 to supply the cleaning gas for cleaning the reaction gas and the chamber 110. Specifically, the second gas supply unit 600 includes first and second gas supply pipes 610 and 620 and a top nozzle 640. The first gas supply pipe 610 is connected to the center of the cover 400, and supplies the cleaning gas supplied through the first gas line 631 to the inside of the chamber 110.

The second gas supply pipe 620 is installed inside the first gas supply pipe 610, and provides a source gas supplied through the second gas line 633 to the tower nozzle 640. The top nozzle 640 is coupled to an output end of the second gas supply pipe 620 and injects a source gas from the second gas supply pipe 620 into the process space PS. The top nozzle 640 is installed inside the cover 400 and faces the support plate 120 at an upper portion of the support plate 120.

The first and second gas lines 631 and 633 are provided with valves 631a and 633a for adjusting the amount of gas in the first and second gas lines 631 and 633, respectively.

In the deposition process, the reaction gas may be provided to the process space PS through both the first and second gas supply units 200 and 600, and the first and second gas supply units 200, 600).

Although described with reference to the embodiments above, those skilled in the art will understand that the present invention can be variously modified and changed without departing from the spirit and scope of the invention as set forth in the claims below. Could be.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a view illustrating a first gas supply unit, a temperature controller, and a band illustrated in FIG. 1.

3 is a perspective view showing the band in FIG.

4 is a cross-sectional view illustrating the gas distribution ring, the temperature control unit, and the band shown in FIG. 1.

Explanation of symbols on the main parts of the drawings

100: reaction unit 200: first gas supply unit

310: bonding plate 320: temperature control unit

330: band 400: cover

500: plasma generating unit 600: second gas supply unit

700: substrate processing apparatus

Claims (9)

A gas distribution ring providing a flow path for the gas to move; A temperature adjusting unit provided outside the gas distribution ring and maintaining the temperature of the gas introduced into the flow path by heating the gas distribution ring; And It includes a band provided on the outside of the temperature control unit surrounding the temperature control unit, and a covering extending from the upper end of the body ring to the inner side where the temperature control unit is located to cover the upper end of the temperature control unit And a fluid supply unit. The method of claim 1, wherein the temperature control unit, And a heater unit disposed outside the gas distribution ring to surround the outer wall of the gas distribution ring and generate heat. The method of claim 2, wherein the temperature control unit, And a heat conductive layer applied to one surface of the heater part and provided between the heater part and the gas distribution ring to improve conductivity of heat generated from the heater part. The fluid supply unit of claim 3, wherein the covering covers the upper end of the heater part and the heat conductive layer to seal the heater part and the heat conductive layer between the body ring and the gas distribution ring. 4. The fluid supply unit of claim 3, wherein the gas distribution ring and the band have a ring shape. 4. The fluid supply unit of claim 3, wherein the heat conducting layer is in powder form. The fluid supply unit of claim 2, wherein the heater part is formed in a sheet form. A chamber providing a process space; A chucking member provided in the process space and supporting the substrate; And A fluid supply unit positioned outside the chucking member when viewed in a plane, and supplying a gas for processing the substrate; The fluid supply unit, A gas distribution ring providing a flow path through which the gas moves; A temperature adjusting unit provided outside the gas distribution ring and maintaining the temperature of the gas introduced into the flow path by heating the gas distribution ring; And And a band provided at an outer side of the temperature control part to surround the temperature control part, and a cover extending from an upper end of the body ring to an inner side in which the temperature control part is located to cover the upper end part of the temperature control part. Substrate processing apparatus, characterized in that. The method of claim 8, wherein the fluid supply unit, At least one coupled to the gas distribution ring and positioned between the gas distribution ring and the chucking member when viewed from above the gas distribution ring, and receiving the gas from the gas distribution ring and spraying the gas into the process space; And a side nozzle of the substrate processing apparatus.

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