KR100934171B1 - 방열 구조체 및 이의 제조 방법 - Google Patents
방열 구조체 및 이의 제조 방법 Download PDFInfo
- Publication number
- KR100934171B1 KR100934171B1 KR1020070110134A KR20070110134A KR100934171B1 KR 100934171 B1 KR100934171 B1 KR 100934171B1 KR 1020070110134 A KR1020070110134 A KR 1020070110134A KR 20070110134 A KR20070110134 A KR 20070110134A KR 100934171 B1 KR100934171 B1 KR 100934171B1
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- South Korea
- Prior art keywords
- layer
- heat transfer
- heat dissipation
- substrate
- dissipation structure
- Prior art date
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 40
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910001120 nichrome Inorganic materials 0.000 claims abstract description 31
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 24
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000003963 antioxidant agent Substances 0.000 claims description 5
- 230000003078 antioxidant effect Effects 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 16
- 230000003064 anti-oxidating effect Effects 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 238000003912 environmental pollution Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 27
- 239000000919 ceramic Substances 0.000 description 16
- 238000000151 deposition Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
| 열확산율[㎟/S] | 열전도율[W/m·K] | Cu 밀도[g/㎤] | |
| 종래예 | 10.727 | 41.215 | 5.902 |
| 실시예 | 11.142 | 51.397 | 5.68 |
Claims (11)
- 삭제
- 삭제
- 삭제
- 삭제
- 기재를 마련하는 단계;상기 기재 상의 적어도 일 측에 NiCr층을 형성하는 단계; 및상기 NiCr층 상에 열전달층을 형성하는 단계;를 포함하며,상기 NiCr층 또는 상기 열전달층을 형성하는 방법이 펄스 스퍼터링법과 직류 스퍼터링법을 함께 사용하여 이루어지는 것을 특징으로 하는 방열구조체의 제조방법.
- 청구항 5에 있어서,상기 펄스 스퍼터링법은 단극 스퍼터, 대칭 양극 스퍼터 및 비대칭 양극 스퍼터로 구성된 일 군에서 선택되는 적어도 하나의 펄스 마그네트론 스퍼터링법인 것을 특징으로 하는 방열구조체의 제조방법.
- 청구항 5에 있어서,상기 NiCr층을 형성하는 단계 및 상기 열전달츨을 형성하는 단계에서, 상기 NiCr층 또는 상기 열전달층에 남은 양의 값의 인장응력과 음의 값의 압축응력의 합으로 결정되는 총괄응력을 조절하여 형성하며,상기 인장응력은 상기 직류 스퍼터링법에 의한 인장응력값에 상기 직류 스퍼터링법에 의해 증착된 두께의 곱으로 구해지고, 상기 압축응력은 상기 펄스 스퍼터링법에 의한 압축응력값에 상기 펄스 스퍼터링법에 의해 증착된 두께의 곱으로 구해지는 것을 특징으로 하는 방열구조체의 제조방법.
- 청구항 7에 있어서,상기 총괄응력의 절대값이 1이하로 조절되는 것을 특징으로 하는 방열구조체의 제조방법.
- 청구항 5에 있어서,상기 열전달층은 Cu, Ag, Au, Al, W, Mg 및 이들 중 어느 하나 이상을 포함하는 복합체로 구성되는 일 군에서 선택되는 적어도 하나인 것을 특징으로 하는 방열구조체의 제조방법.
- 청구항 5에 있어서,상기 열전달층 상에 산화방지층을 형성하는 단계를 더 포함하는 것을 특징으로 하는 방열구조체의 제조방법.
- 청구항 10에 있어서,상기 산화방지층이 Au층의 단일층구조 또는 Ni층 상에 Au층이 형성된 이중층구조인 것을 특징으로 하는 방열구조체의 제조방법.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070110134A KR100934171B1 (ko) | 2007-10-31 | 2007-10-31 | 방열 구조체 및 이의 제조 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070110134A KR100934171B1 (ko) | 2007-10-31 | 2007-10-31 | 방열 구조체 및 이의 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20090044171A KR20090044171A (ko) | 2009-05-07 |
| KR100934171B1 true KR100934171B1 (ko) | 2009-12-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020070110134A KR100934171B1 (ko) | 2007-10-31 | 2007-10-31 | 방열 구조체 및 이의 제조 방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100934171B1 (ko) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004087913A (ja) * | 2002-08-28 | 2004-03-18 | Yamaha Corp | 銅メッキセラミックス基板およびその製造方法ならびに銅メッキセラミックス基板を備えた熱電モジュール |
| KR20050116377A (ko) * | 2003-03-18 | 2005-12-12 | 스미토모 덴키 고교 가부시키가이샤 | 발광 소자 탑재용 부재 및 그것을 사용한 반도체 장치 |
| KR100867756B1 (ko) * | 2008-04-03 | 2008-11-10 | 주식회사 케이아이자이맥스 | 고속/고밀도 마그네트론 스퍼터링 법을 이용한 세라믹인쇄회로기판의 원판 제조 방법 |
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- 2007-10-31 KR KR1020070110134A patent/KR100934171B1/ko active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004087913A (ja) * | 2002-08-28 | 2004-03-18 | Yamaha Corp | 銅メッキセラミックス基板およびその製造方法ならびに銅メッキセラミックス基板を備えた熱電モジュール |
| KR20050116377A (ko) * | 2003-03-18 | 2005-12-12 | 스미토모 덴키 고교 가부시키가이샤 | 발광 소자 탑재용 부재 및 그것을 사용한 반도체 장치 |
| KR100867756B1 (ko) * | 2008-04-03 | 2008-11-10 | 주식회사 케이아이자이맥스 | 고속/고밀도 마그네트론 스퍼터링 법을 이용한 세라믹인쇄회로기판의 원판 제조 방법 |
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| Publication number | Publication date |
|---|---|
| KR20090044171A (ko) | 2009-05-07 |
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