KR100931896B1 - Protection panel for led lamp and method for production of the same - Google Patents

Abstract

PURPOSE: A protective panel for an LED lamp and a manufacturing method thereof are provided to improve light transmission of the protective panel by forming a nano pattern in one side or both sides of the protective panel. CONSTITUTION: A substrate layer is made of silicon material(S110). The substrate layer is a silicon wafer. A pattern hole forming layer is formed on the substrate by a sputtering process(S120). A master panel is made by forming a nano pattern hole on the pattern hole forming layer repeatedly(S130). The protective panel layer is made of the transparent material. The shape of a protective panel corresponds to the shape of the substrate layer. A nano pattern corresponding to the nano pattern hole of a master panel is repeatedly formed in at least one of the upper and lower parts of the protective panel layer(S220). The protective panel is made by removing the master panel from the protective panel layer.

Description

Protection panel for LED lamp and method for production of the same}

The present invention relates to a protective panel for LED lighting lamps and a method of manufacturing the same, and more particularly, to form a nano-pattern on one side or both sides of the protective panel provided to protect the LED from external factors in the configuration of the lighting lamp to improve transmittance In this way, the light emitted from the LED is not absorbed by the protection panel but is emitted to the outside, thereby improving the brightness, and according to the structure of the LED lighting, by providing an internal protection panel and an external protection panel (cover), The present invention relates to a protective panel for LED lighting lamps and a method of manufacturing the same that can be applied to a structure.

Generally, lighting is used to illuminate a desired place by installing it in an indoor space, a road, a building, etc., and mainly a fluorescent lamp, an incandescent lamp, a neon lamp, etc., and most of these lamps emit a gas of a specific color in a glass tube. It is manufactured by gas discharge method using injection.

However, these gas discharge lamps have a short lifespan, and in particular, neon lamps have a very high power consumption. Therefore, a separate power line must be installed and air pollution can be caused when gas is leaked due to burnout. There is a problem.

Recently, in order to solve the above problems of the gas discharge lamp, a lamp using a light emitting diode (LED) having an advantage of a long product life and low electricity consumption has been developed.

LED is a optoelectronic device that has a junction structure of P-type and N-type semiconductors, and emits light of energy corresponding to the band gap of the semiconductor by combining electrons and holes when voltage is applied, and the reaction time is longer than that of general light bulbs. It is fast and consumes 20% of power consumption, and is being used in various fields including high efficiency lighting means.

In spite of the above advantages, LED lighting has a low brightness compared to gas discharge lighting, there is a limit that can not be fully utilized for various lighting conditions.

To compensate for this, a module in which a plurality of high brightness LEDs or power LEDs are assembled on a substrate is used as a light source.

However, when the number of LEDs increases, the internal temperature of the lamp increases, and thus, there is a problem in that the lifetime of the LED having the characteristics of the semiconductor device is reduced. For example, if the internal temperature of a lamp rises above 30 degrees, its lifetime decreases to about 1/10.

To this end, a method of separately providing a cooling means for cooling the heat generated by the LED itself has been proposed, but the configuration of the lamp is complicated by such cooling means, as well as the lamp is damaged by the failure of the cooling means. Has a problem.

Accordingly, there is a demand for the development of a lamp that can obtain desired luminance while minimizing the number of LEDs.

The present invention has been made in accordance with the above requirements, by improving the transmittance of the protective panel provided to protect the LED from external factors in the configuration of the lamp, the light emitted from the LED is not absorbed by the protective panel is emitted to the outside It is an object of the present invention to provide a protection panel for LED lighting lamps and a method of manufacturing the same, which can improve the luminance.

In addition, the present invention, according to the structure of the LED lamp, by providing an internal protective panel and an external protective panel (cover), an object of the present invention to provide a protective panel for LED lighting lamps and a manufacturing method that can be applied to various structures. have.

In order to achieve the above object, a method for manufacturing a protective panel for an LED lighting lamp according to the present invention, a) forming a base material layer of a silicon material; b) forming a pattern hole forming layer on the base layer; c) manufacturing a master panel by repeatedly forming nano pattern holes on the pattern hole forming layer; d) forming a protective panel layer made of a transparent material corresponding to the shape of the base layer; e) the nano pattern hole of the master panel is pressed to at least one of the upper and lower surfaces of the protective panel layer, and a nano pattern corresponding to the nano pattern hole of the master panel is formed on the upper surface of the protective panel layer. And repeatedly forming at least one of the lower surfaces; And f) removing the master panel from the protective panel layer on which the nanopattern is formed to manufacture the protective panel.

In addition, the protective panel for LED lighting lamp according to the invention is characterized in that it is manufactured by the manufacturing method as described above.

In addition, the LED lamp according to the invention is characterized in that the protective panel manufactured by the manufacturing method as described above is provided.

By the above solution, the present invention forms a nano-pattern on the protective panel, by lowering the reflectance of the protective panel to the light emitted from the LED, by improving the transmittance, it is possible to minimize the amount of light lost in the protective panel will be.

In addition, according to the structure of the LED lamp, when the protective panel is used as a cover of the lamp, a nano-pattern is formed on the inner surface of the protective panel, and when the protective panel is located inside the inner and outer surfaces of the protective panel By forming the nanopattern, there is an effect that can obtain a more improved brightness.

Therefore, power consumption can be minimized in LED lamps having the same brightness, and brightness can be improved in lamps having the same number of LEDs.

In addition, the structure of the LED lamp can be simplified, easy to install, and by improving the expandability of the application range to meet various purposes, there is an advantage of improving the product competitiveness in the LED lamp field.

Examples of the LED lighting lamp protection panel and a method of manufacturing the same according to the present invention can be applied in various ways, hereinafter with reference to the accompanying drawings will be described the most preferred embodiment.

1 is a process diagram showing an example of a method for manufacturing a protective panel for LED lighting lamp according to the present invention, the step of manufacturing a nano-panel hole formed master panel (S100) and the protection by the present invention using the master panel Producing a panel (S200).

Hereinafter, in describing FIG. 1, the present invention will be described with reference to FIG. 2.

First, after forming the base layer 110 made of silicon (Si, silicon) (S110), the pattern hole forming layer 120 of aluminum is formed on the upper surface of the base layer by a sputtering process (S120). . Here, the base material layer 110 of the silicon material refers to a silicon wafer (Wafer) manufactured by the Czochralski (CZ) method, etc., the method of manufacturing the silicon wafer may be applied to various methods according to the needs of those skilled in the art Of course it can.
In addition, the pattern hole forming layer 120 is a nano pattern hole 121 prepared to form the nano pattern 211 is repeatedly formed, the nano pattern hole 121 formed in the pattern hole forming layer 120. And correspondingly, a plurality of nano-patterns 211 formed on the protective panel layer 210 is formed repeatedly, it is natural that the repeating state can be formed regularly or irregularly according to the needs of those skilled in the art.

As described above, the sputtering process for sputtering aluminum onto the silicon material 11 is performed by forming an even layer of aluminum by the sputtering process so that the nanopattern hole in a good state is formed by an even density. This is to prevent deterioration.

In addition, when the pattern hole forming layer 120 is formed in the substrate layer 110 by the sputtering process as described above, it is necessary to evenly form the upper surface to form a pattern.

To this end, the upper surface of the pattern hole forming layer 120 of aluminum is polished by electrolytic polishing.

Systems and methods used in such an electropolishing process, and the subsequent etching process can be used generally known, it may be provided with conditions such as chemicals and voltage as follows.

The electrolytic solution used in the electropolishing operation is composed of a ratio of perchloric acid (HClO ₄ ): ethanol (C ₂ H ₅ OH) = 1: 4, the voltage used in the electropolishing operation is 5 ~ 10 V, the negative electrode The distance between the anode and the cathode is 5 ~ 10cm, the reaction temperature is carried out to 7 ~ 10 ℃.

In addition, in order to maintain the reaction temperature in the water bath in which the electropolishing operation is performed, a stirring operation may be performed using a magnetic bar.

Meanwhile, since the oxidized aluminum oxide layer 122 formed on the aluminum layer 120 is formed by the electropolishing operation, as shown in FIG. 3A, a pattern hole forming layer 120 of aluminum is formed (S212). When the electropolishing is completed, the aluminum oxide layer 122 formed on the pattern hole forming layer 120 is removed by etching (S121).

At this time, the electrolyte solution is provided to include about 1.8 parts by weight of chromic acid, about 6 parts by weight of phosphoric acid, the temperature of the etching operation is carried out for 50 to 70 minutes to 60 ~ 70 ℃.

Subsequently, when the pattern hole forming layer 120 of aluminum from which aluminum oxide has been removed remains on the base layer 110, an ANO (Anodic Aluminum Oxide) process is performed (S131), and the upper portion of the pattern hole forming layer 120 is formed. The nano pattern holes 121 are formed in the central portion (the thin solid line in FIG. 3B) while oxidizing.

Here, the anodization process may be performed using a general anodization system.

Looking in more detail of the anodization process, it is possible to use an electrolyte that may be provided, including hydroxyl (oxaic acid), sulfuric acid, phosphoric acid.

For example, when the electrolyte is hydroxyl (oxalic acid), the concentration is preferably 0.04 to 0.3 M, the reaction temperature is 4 to 7 ° C, the reaction voltage is 55 to 100 V, and the reaction time is 2 to 20 minutes.

By the above method, the aluminum oxide layer 123 is formed in the pattern hole forming layer 120 of aluminum to have a thickness of about 500 to 600 nm, and the size of the nano pattern hole 121 generated by this process ( For example, in the case of a circular hole (diameter) is 50 ~ 100 nm, depth is formed to 100 ~ 400 nm.

In particular, the anodization step (S131), the cathode of platinum may be provided in the electrolyte made of oxalic acid (C ₂ H ₂ O ₄ ), the anode and the anode by using the pattern hole forming layer 120 of the aluminum as an anode When the cathode is provided to be between 5 to 10 cm and 4 to 7 ° C., a nano pattern hole 121 is formed by applying a voltage of 55 to 100 V for 1 to 5 minutes.

When the anodized aluminum oxide layer 123 formed by the anodization process is removed by etching (S132), as shown in FIG. 3B, a nano pattern hole 121 is formed (S130) to manufacture the master panel 100. Is completed.

Here, the solution used for the nano-etching, it is provided so that about 1.8 parts by weight of chromic acid, about 6 parts by weight of phosphoric acid, the nano-etching process is performed for 50 to 70 minutes at a temperature of 60 ~ 70 ℃.

5 is an enlarged photograph of the surface of the master panel 100.

And, the protective panel manufacturing step (S200), first, as shown in Figure 2, by placing the master panel 100 produced by the above process on one side or both sides of the transparent protective panel 210, heat and pressure Performing a hot embossing process to apply a (S210).

Here, the protective panel 210 is preferably made of any one of poly methyl metaacrylate (PMMA), poly carbonate (PC), cyclic olefin polymer (COC).

At this time, the hot embossing process (S210), so that the glass transition temperature is 110 ~ 170 ℃, the pressing force is 3 ~ 7kN.

For example, in the case of the protective panel layer 210 made of PMMA, since the transition temperature is about 106 ℃, the heating temperature in the hot embossing process is about 110 ℃, the pressing force is about 3 kN.

In addition, in the case of the protective panel layer 210 made of PC, since the transition temperature is about 155 ° C, the heating temperature in the hot embossing process is about 160 ° C and the pressing force is about 5kN.

In addition, in the case of the protective panel layer 210 made of COC, since the transition temperature is about 160 ° C., the heating temperature in the hot embossing process is about 170 ° C., and the pressing force is about 7 kN.

By the hot embossing process (S210), a nanopattern 211 corresponding to the nanopattern hole 121 of the master panel 100 is formed on one side of the protective panel layer 210 (S220). .

Meanwhile, in the process of forming the nanopattern 211, since the master panel 100 and the protection panel layer 210 are integrated, it is necessary to remove the master panel 100.

To this end, an etching process for removing the master panel 100 including the base layer 110 made of silicon and the pattern hole forming layer 120 made of aluminum is performed (S230).

Etching solution used here is preferably 80 ℃ TMAH (Tetra Methyl Ammonia Hydroxide) or room temperature HNA (HF + FNO ₃ + Actic Acid).

By completing the above etching process (S230), as shown in Figure 2 it is possible to manufacture the LED lighting lamp protection panel 210 according to the present invention.

6 is an enlarged photograph of the surface of the protective panel 210.

On the other hand, as shown in Figure 2, the nano-pattern 211 may be formed on one side or both sides of the protective panel 200, the characteristics of each configuration is as shown in FIG.

First, (a) of FIG. 4 shows a protection panel without a nanopattern formed therein. As light emitted from the LED passes through the protection panel, part of the protection panel is reflected and extinguished by the inner and outer surfaces of the protection panel. Can be.

At this time, the light transmittance of the protective panel is about 90%, the reflectance is about 8%.

4 (b) shows a protection panel 210 in which a nanopattern 211 is formed on one side according to the present invention, which is emitted from the LED and passes through the protection panel 210, in the process of protection panel 210. The light L1 incident on the inner side (lower side in the figure) of the N) is reflected by the side surface of the nanopattern 211 to pass through the protective panel 210, thereby improving the overall light transmittance.

In this case, the light transmittance of the protective panel 210 having the nanopattern 211 formed on one side thereof is about 93%, and the reflectance is about 4%.

On the other hand, in the case of the protective panel 210 shown in Figure 4 (b), the light passing through the protective panel 210 is reflected (Lr) to the outer surface (upper surface in the drawing) of the protective panel 210 to the inside Inflow occurs.

Therefore, as shown in FIG. 4C, when the nanopatterns 211 are formed on both sides of the protection panel 210 ′, the light L2 passing through the protection panel 210 ′ is nano-sided on the outer surface. By the pattern 211 can be emitted (L3) to the outside, it is possible to improve the light transmittance as a whole.

In this case, the light transmittance of the protective panel 210 'having the nanopatterns 210' formed on both sides is about 98%, and the reflectance is about 1%.

On the other hand, when the protective panel 210 'according to the present invention as shown in Fig. 4 (c) is used as an external cover such as LED lighting, external foreign matter (dust, etc.) is accumulated between the nano-pattern 211, resulting in As a result, a problem of lowering light transmittance may occur.

Therefore, the protection panel 210 'according to the present invention as shown in Figure 4 (c) is preferably used to be provided inside the LED lighting, the case of the outer cover of the LED lighting, the present invention as shown in Figure 4 (b) It is preferable to use a protective panel 210 by.

In (c) of FIG. 4, reference numeral 'C' denotes an LED lamp cover when the protection panel 210 'is provided inside the LED lamp.

In the above, the protective panel for LED lighting lamp and the manufacturing method thereof according to the present invention have been described. Such a technical configuration of the present invention will be understood by those skilled in the art that the present invention can be implemented in other specific forms without changing the technical spirit or essential features of the present invention.

Therefore, the above-described embodiments are to be understood in all respects as illustrative and not restrictive, and the scope of the present invention is indicated by the appended claims rather than the foregoing description, and the meanings of the claims and All changes or modifications derived from the scope and the equivalent concept should be construed as being included in the scope of the present invention.

1 is a process chart showing an example of the manufacturing method of the protective panel for LED lighting lamp according to the present invention.

FIG. 2 is a flowchart illustrating a process of manufacturing a protection panel for LED lighting lamps according to FIG. 1.

3A is a flowchart illustrating an example of S120 shown in FIG. 2.

3B is a flowchart illustrating an example of S130 shown in FIG. 2.

4 is a view for explaining the performance of the protective panel for LED lighting lamp according to the present invention.

FIG. 5 is an enlarged photograph of the surface of the master panel shown in FIG. 2.

6 is an enlarged photograph of the surface of the protective panel shown in FIG.

<Explanation of symbols for the main parts of the drawings>

100: master panel 110: base layer

120: pattern hole forming layer 121: nano pattern hole

200: protective panel 210: protective panel layer

211: Nano pattern

Claims (9)

a) forming a base layer of a silicon material; b) forming a pattern hole forming layer on the base layer; c) manufacturing a master panel by repeatedly forming nano pattern holes on the pattern hole forming layer; d) forming a protective panel layer made of a transparent material corresponding to the shape of the base layer; e) the nano pattern hole of the master panel is pressed to at least one of the upper and lower surfaces of the protective panel layer, and a nano pattern corresponding to the nano pattern hole of the master panel is formed on the upper surface of the protective panel layer. And repeatedly forming at least one of the lower surfaces; And f) manufacturing a protective panel by removing the master panel from the protective panel layer on which the nano-pattern is formed. The method of claim 1, The base layer of step a) is a silicon wafer, Step b), b-1) depositing a pattern hole forming layer of aluminum on the substrate layer of the silicon wafer; b-2) a method of manufacturing a protection panel for LED lighting lamps, comprising removing the aluminum oxide layer generated by natural oxidation on the pattern hole forming layer of the deposited aluminum by etching. The method of claim 2, The pattern hole forming layer of aluminum is deposited by a sputtering process. The method of claim 2, Step c) is c-1) forming an aluminum oxide layer by forcibly oxidizing the pattern hole forming layer of aluminum to form a nano pattern hole; c-2) forming a nano-pattern hole by removing the forcibly formed aluminum oxide layer by anodizing. The method of claim 4, wherein The process c-1) is a method of manufacturing a protective panel for LED lighting, characterized in that the oxidation by AAO (Anodic Aluminum Oxide) process. The method of claim 1, The protective panel layer, Method of manufacturing a protection panel for LED lighting lamps, characterized in that made of at least one of PMMA (Poly Methyl Meta Acrylate), PC (Poly Carbonate), COC (Cyclic Olefin Polymer). The method of claim 6, The base layer is made of silicon, the pattern hole forming layer is made of aluminum, Step f), Method for manufacturing a protective panel for LED lighting lamps characterized in that the master panel is removed by etching with TMAH (Tetra Methyl Ammonia Hydroxide) or HNA (HF + HNO3 + Acetic Acid). A protective panel for LED lighting lamps produced by any one of the manufacturing method of claim 1. LED lighting having a protective panel of claim 8.

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