KR100922912B1 - 노광장치 및 디바이스 제조방법 - Google Patents
노광장치 및 디바이스 제조방법 Download PDFInfo
- Publication number
- KR100922912B1 KR100922912B1 KR20070134795A KR20070134795A KR100922912B1 KR 100922912 B1 KR100922912 B1 KR 100922912B1 KR 20070134795 A KR20070134795 A KR 20070134795A KR 20070134795 A KR20070134795 A KR 20070134795A KR 100922912 B1 KR100922912 B1 KR 100922912B1
- Authority
- KR
- South Korea
- Prior art keywords
- light
- exposure apparatus
- light receiving
- substrate
- optical system
- Prior art date
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
- G01N21/552—Attenuated total reflection
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (9)
- 원판의 패턴 상을 기판에 투영하는 투영 광학계; 및상기 투영 광학계로부터 사출된 광을 검지하는 센서를 포함하되,상기 센서는 수광면을 가지는 수광 소자 및 상기 투영 광학계로부터 사출된 광을 상기 수광면을 향하여 반사시키는 반사면을 구비한 광학 부재를 포함하며,상기 반사면은 상기 수광면에 대해서 예각을 이루는 것을 특징으로 하는 노광장치.
- 제 1항에 있어서, 상기 반사면은 원추대형상(truncated conical prism shape) 또는 각추대형상(truncated pyramidal prism shape)의 측면을 포함하는 것을 특징으로 하는 노광장치.
- 제 1항에 있어서, 상기 센서는 상기 광학 부재보다 상기 투영 광학계에 가깝게 배치된 투과성 기판을 포함하고,상기 투과성 기판에 형성된 차광막에 개구 패턴이 형성되어 있는 것을 특징으로 하는 노광장치.
- 제 3항에 있어서, 상기 개구 패턴은 핀홀 패턴 및 라인 앤드 스페이스 패턴 중 하나를 포함하는 것을 특징으로 하는 노광장치.
- 제 3항에 있어서, 상기 광학 부재는 상기 투과성 기판과 광학적으로 접촉하고 있는 것을 특징으로 하는 노광장치.
- 제 1항에 있어서, 상기 노광장치는 상기 투영 광학계와 상기 기판 사이의 공간을 채운 액체를 통해서 상기 기판을 노광하는 액침 노광장치를 포함하는 것을 특징으로 하는 노광장치.
- 삭제
- 제 1항에 있어서, 상기 반사면에 입사하는 광의 입사각은 임계각 이상인 것을 특징으로 하는 노광장치.
- 제 1항에 따른 노광장치를 이용해서 기판을 노광하는 단계; 및노광된 기판에 대해서 현상처리를 수행하는 단계를 포함하는 것을 특징으로 하는 디바이스 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-00344694 | 2006-12-21 | ||
JP2006344694A JP2008159695A (ja) | 2006-12-21 | 2006-12-21 | 露光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080058260A KR20080058260A (ko) | 2008-06-25 |
KR100922912B1 true KR100922912B1 (ko) | 2009-10-22 |
Family
ID=39542312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20070134795A KR100922912B1 (ko) | 2006-12-21 | 2007-12-21 | 노광장치 및 디바이스 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7880862B2 (ko) |
JP (1) | JP2008159695A (ko) |
KR (1) | KR100922912B1 (ko) |
TW (1) | TW200837508A (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105122093B (zh) * | 2013-03-08 | 2018-04-03 | 法玛科技顾问股份有限公司 | 棱镜及应用此棱镜的光学检测系统 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100210569B1 (ko) | 1995-09-29 | 1999-07-15 | 미따라이 하지메 | 노광방법 및 노광장치, 그리고 이를 이용한 디바이스제조방법 |
KR20010085590A (ko) * | 2000-02-29 | 2001-09-07 | 시마무라 기로 | 노광장치, 마이크로 디바이스, 포토마스크 및 노광방법 |
US20050200815A1 (en) | 2004-02-09 | 2005-09-15 | Canon Kabushiki Kaisha | Projection exposure apparatus, device manufacturing method, and sensor unit |
JP2006278960A (ja) | 2005-03-30 | 2006-10-12 | Canon Inc | 露光装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170058458A (ko) * | 2003-09-29 | 2017-05-26 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
JP4466300B2 (ja) | 2003-09-29 | 2010-05-26 | 株式会社ニコン | 露光装置及び露光方法並びにデバイス製造方法、計測装置 |
JP2005175034A (ja) | 2003-12-09 | 2005-06-30 | Canon Inc | 露光装置 |
-
2006
- 2006-12-21 JP JP2006344694A patent/JP2008159695A/ja not_active Withdrawn
-
2007
- 2007-12-11 TW TW96147233A patent/TW200837508A/zh unknown
- 2007-12-19 US US11/959,622 patent/US7880862B2/en not_active Expired - Fee Related
- 2007-12-21 KR KR20070134795A patent/KR100922912B1/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100210569B1 (ko) | 1995-09-29 | 1999-07-15 | 미따라이 하지메 | 노광방법 및 노광장치, 그리고 이를 이용한 디바이스제조방법 |
KR20010085590A (ko) * | 2000-02-29 | 2001-09-07 | 시마무라 기로 | 노광장치, 마이크로 디바이스, 포토마스크 및 노광방법 |
US20050200815A1 (en) | 2004-02-09 | 2005-09-15 | Canon Kabushiki Kaisha | Projection exposure apparatus, device manufacturing method, and sensor unit |
JP2006278960A (ja) | 2005-03-30 | 2006-10-12 | Canon Inc | 露光装置 |
Also Published As
Publication number | Publication date |
---|---|
US20080151251A1 (en) | 2008-06-26 |
KR20080058260A (ko) | 2008-06-25 |
US7880862B2 (en) | 2011-02-01 |
TW200837508A (en) | 2008-09-16 |
JP2008159695A (ja) | 2008-07-10 |
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