KR100916048B1 - Dielectric ceramic material, fabrication mehtod of the same and ceramic condencer - Google Patents

Abstract

In a dielectric ceramic material having a raw material containing barium titanate as a main component, a subcomponent, and a sintering aid, a dielectric ceramic material that can be baked at a low temperature is obtained.

At least the principal component powder is imparted with a shear stress and a compressive force based on the centrifugal force of the mechanical rotating body applying rω ² = 170 m / s ² or more. Or impart a shearing stress and compression, based on the total centrifugal force of the mechanical time for applying the mixture of the main component and sub-component and a sintering aid and, rω ² = 170m / s ² or more to the raw material mixture powder.

Dielectric ceramic, ceramic capacitors, barium titanate

Description

Dielectric ceramic material, method of manufacturing the same and ceramic capacitors {DIELECTRIC CERAMIC MATERIAL, FABRICATION MEHTOD OF THE SAME AND CERAMIC CONDENCER}

TECHNICAL FIELD This invention relates to a dielectric ceramic material, its manufacturing method, and a ceramic capacitor.

BACKGROUND ART A conventional multilayer ceramic capacitor (MLCC) is manufactured by molding a BaTiO ₃ -based ceramic dielectric material into a sheet shape, repeating a process of printing and laminating internal electrode layers on a green sheet, and further firing.

Japanese Unexamined Patent Application Publication No. 10-158059 discloses a technique for attaching and supporting a subcomponent on the surface of a main component powder by a mechano chemical reaction with a mechanical force. That is, by mixing the barium titanate powder and the subcomponent in a Leicaigi and firing it at 1200 ° C, it is possible to obtain a ceramic in which the grain boundaries of the main component by the subcomponent are uniform. .

In recent years, with the miniaturization and high density of electronic circuits, miniaturization and large capacity of ceramic capacitors are strongly demanded. In order to miniaturize and increase the capacity of ceramic capacitors, an attempt has been made to increase the thickness of an internal electrode layer and a dielectric layer and increase the number of stacked layers. As the internal electrode becomes thinner, the cover ratio of the electrode (the ratio of the area where the electrode is actually formed based on the area targeted for manufacturing) is lowered, thereby causing a problem that the electric capacity is lowered. For this reason, it was thought to lower the firing temperature, but lowering the temperature causes a problem that the dielectric ceramic material cannot be fired.

This invention is made | formed in view of the said situation, and makes it a subject to provide the dielectric ceramic material which can be baked at low temperature, its manufacturing method, and the ceramic capacitor using the same.

In order to solve the above problems, the invention according to claim 1 of the present invention relates to a method for producing a dielectric ceramic material having a raw material containing a barium titanate as a main component, a subcomponent, and a sintering aid, wherein rω ² = 170 m / s ² or more is added. A method of producing a dielectric ceramic material, comprising the step of applying at least the principal component powder a shear stress and a compressive force based on the centrifugal force of the mechanical rotating body.

According to a second aspect of the present invention, there is provided a method for producing a dielectric ceramic material having a raw material containing a barium titanate as a main component, a subcomponent, and a sintering aid, wherein the main component, the subcomponent, and the sintering aid are mixed, and rω ² = 170 m / s is a production method of a dielectric ceramic material, characterized in that the shear stress and compressive force based on the centrifugal force of the entire mechanical time for applying the ^second or higher and a step of giving to the material mixture powder.

The invention according to claim 3 of the present invention is a dielectric ceramic material produced by the method for producing a dielectric ceramic according to claim 1 or 2.

The invention according to claim 4 of the present invention is a ceramic capacitor provided between a plurality of electrodes and the electrode, and having a dielectric layer made of a sintered body of the dielectric ceramic material according to claim 3.

The invention according to claim 5 of the present invention is the ceramic capacitor according to claim 4, wherein the electrode contains Ni or a Ni alloy.

According to the method for producing a dielectric ceramic material of the present invention, the sintering is promoted and at a lower temperature by performing a mechano-chemical grinding treatment that imparts the shear stress and the compressive force based on the centrifugal force of the mechanical rotating body to the particle surface. Firing becomes possible. Furthermore, the average particle diameter after sintering becomes small.

Hereinafter, the present invention will be described with reference to the accompanying drawings based on the best mode.

1 is a schematic sectional view illustrating a cross-sectional structure of a multilayer ceramic capacitor (MLCC) according to the present embodiment. This multilayer ceramic capacitor 10 includes a dielectric layer 11 made of a sintered body of the dielectric ceramic material described above between opposing internal electrodes 12. Such a dielectric layer 11 is obtained by forming the internal electrode 12 on one side of the green sheet in which the dielectric ceramic material is formed into a sheet, and firing the laminate obtained by laminating a plurality of the same. Moreover, the external electrodes 13 and 14 connected to the edge part of the internal electrode 12 are provided in the side surface of this laminated body.

As the material of the internal electrode 12 or the external electrodes 13 and 14, metals such as copper (Cu), nickel (Ni), tungsten (W), molybdenum (Mo) or alloys thereof, and indium-gallium (In -Ga), silver (Ag), silver-10 palladium (Ag-10Pd) alloy, or the like, or a mixture of carbon, graphite, carbon and graphite, and the like.

The internal electrode 12 is mixed with, for example, a predetermined amount of an organic binder, a dispersant, an organic solvent, a reducing agent, etc., if necessary, into a powder made of the main material, and the conductive paste having a predetermined viscosity of the green sheet It can form by printing so that it may become a predetermined | prescribed pattern on one side, and baking in a reducing atmosphere. As the internal electrode 12, relatively inexpensive nickel (Ni) or a nickel alloy is preferable.

Moreover, copper (Cu) is preferable as the external electrodes 13 and 14 in terms of low resistance and low cost. The external electrodes 13 and 14 can be formed on the outer surface of the laminate composed of the internal electrode 12 and the dielectric layer 11 by applying a coating method or the like.

In the method for producing a dielectric ceramic material according to the present embodiment, 170 m / s ² or more is applied as a centrifugal acceleration (rω ² ) to a dielectric ceramic material having barium titanate (BaTiO ₃ ) as a main component, a subsidiary component and a sintering aid. The shear stress and the compressive force based on the centrifugal force of the mechanical rotating body can be obtained by at least giving the principal component powder. By performing the mechano chemical grinding treatment which gives the shear stress and the compressive force based on the centrifugal force of the mechanical rotating body to the surface of the main component powder, the surface of the powder is activated and sintering is promoted. Thereby, even if it bakes at low temperature, the densified sintered compact which satisfy | fills X5R standard can be obtained.

In the dielectric ceramic material according to the present embodiment, the main component, the subcomponent, and the sintering aid are mixed before the mechanochemical grinding treatment which gives the shear stress and the compressive force based on the centrifugal force of the mechanical rotating body, and the centrifugal acceleration (rω) ² ) may be obtained by imparting the shear stress and the compressive force based on the centrifugal force of the mechanical rotating body applying 170 m / s ² or more to the raw material mixed powder. This makes it possible to obtain a densified sintered body that satisfies the X5R standard even when the firing temperature is lowered. The effect of the present invention is not particularly limited, but for example, it is believed that the subcomponent and the sintering aid are coated on the surface of the main component powder and the grain growth is suppressed by activating the surface of the main component powder in the presence of the subcomponent and the sintering aid. .

As for the processing time at the time of performing a mechanochemical grinding process which gives the shear stress and the compressive force based on the centrifugal force of a mechanical rotating body, 0.5 hour or more is preferable in order to fully provide a shear stress and a compressive force. In addition, from the viewpoint of surface activation of the main ingredient powder, there is no particular upper limit to the treatment time, but if it is long, the treatment time is preferably within 3 hours, and therefore the treatment time is preferably 0.5 to 3 hours.

The centrifugal acceleration rω ² is more preferably 1000 m / s ² or more, and even more preferably 2000 m / s ² or more.

In the mixing step of the main component, the subcomponent, and the sintering aid, the centrifugal force applied to the particles may be less than 170 m / s ² as rω ² , and ball mill mixing can be used, for example. After the main component, the minor component, and the sintering aid are well mixed and sufficiently dispersed, the mechano chemical grinding treatment to give the shear stress and the compressive force based on the centrifugal force of the mechanical rotating body is performed, thereby controlling the grain growth of the main component powder during sintering. As a result, it is possible to obtain a densified sintered body that satisfies the X5R standard at a lower temperature.

On the other hand, when performing a mechano chemical grinding process only with a main component powder, you may perform the mixing process with a subcomponent and a sintering adjuvant after the process.

As a subcomponent used for the dielectric ceramic material of this embodiment, it is preferable to contain a barium (Ba) compound, a manganese (Mn) compound, a magnesium (Mg) compound, and a rare earth element (Re) compound. The rare earth element Re preferably includes at least one of dysprosium (Dy), yttrium (Y), holmium (Ho), ytterbium (Yb), and samarium (Sm). A specific compound, there may be mentioned the yttrium oxide (Y ₂ O ₃₎ a rare earth element (Re) oxide, magnesium (MgO), manganese oxide, such as (Mn ₃ O ₄₎ or the like. When the composition range of the subcomponent is 100 mol parts of barium titanate as the main component, the barium (Ba) compound is converted into Ba, and Ba = 0.5 to 1.5 mol parts, and the manganese (Mn) compound is converted into Mn, and Mn = 0.025 to 1.0. Molar parts and magnesium (Mg) compounds in terms of Mg, Mg = 0.5 to 3.0 mole parts, and rare earth element (Re) compounds in terms of Re (in the case of containing two or more types of elements), Re = 0.5 to 3.0 mole parts desirable.

Further, roneun sintering aid (e.g. SiO ₂₎ used in the dielectric ceramic material according to the present embodiment can use the glass component, for example. With the glass components, for example, silicon (Si) and a second component boron (B) a compound consisting of compound (for example B ₂ O ₃₎ and aluminum (Al) compound (e.g. Al ₂ O ₃₎ A second component comprising at least one of and at least one of a barium (Ba) compound (eg, BaCO ₃ ), a zinc (Zn) compound (ZnO), and a calcium (Ca) compound (eg, CaCO ₃ ) The thing containing the 3rd component made to mention is mentioned.

As for the addition amount of a sintering aid, 0.2-1.4 weight part is preferable with respect to 100 weight part of main components.

A glass component can be manufactured as glass powder according to the following step S1-S5.

(Step S1) The compound of each component is combined and dry mixed to obtain a powder. Alternatively, the compound of each component may be combined, wet mixed and pulverized to obtain a slurry, and the slurry may be dehydrated and dried to obtain a powder.

(Step S2) The obtained powder is put into the crucible of (Pt-Rh), for example, and it melt | dissolves in the air at 1200-1700 degreeC for 1 to 4 hours.

(Step S3) The molten metal obtained by melting is poured into a mold.

(Step S4) Quench and vitrify.

(Step S5) The glass is ground to obtain a glass powder.

The dielectric ceramic material according to the embodiment of the present invention can be produced by firing, for example, a raw material mixture having a main component, a subcomponent, and a sintering aid with a mechano chemical grinding treatment. It is preferable to make sintering temperature 1100 degrees C or less.

In particular, a first component composed of a silicon (Si) compound as a sintering aid, a second component containing at least one of a boron (B) compound and an aluminum (Al) compound, a barium (Ba) compound, and a zinc (Zn) By including a third component comprising at least one of a compound and a calcium (Ca) compound, and adding a glass component having a predetermined composition ratio, the sintering can be promoted even when sintering at a low temperature of 1100 ° C. or lower, and it is compact and electrically It is possible to obtain a dielectric ceramic material in which deterioration in characteristics is also suppressed. Furthermore, reduction of manufacturing cost can also be attained by baking at low temperature.

In the multilayer ceramic capacitor according to the present embodiment, the firing temperature can be lowered and the cover ratio of the electrode can be suppressed from being reduced, whereby the internal electrode 12 and the dielectric layer 11 can be thinned and the number of stacked layers can be increased. .

Hereinafter, an Example demonstrates this invention concretely.

(Test Methods)

The composition is weighed such that the composition is barium titanate (100 mole parts) + Ba (1.0 mole parts) + Mn (0.2 mole parts) + Mg (1.1 mole parts) + Dy (0.9 mole parts). The sintering aid (composition is BaO: 0.13, ZnO: 0.10, SiO ₂ : 0.26, B ₂ O ₃ : 0.33 in the molar ratio of each component whose total of Ba + Zn + Si + B + Al + Ca is 1). , Al ₂ O ₃ : 0.05, CaO: 0.13) were added at a ratio of 1 part by weight of the sintering aid to 100 parts by weight of the main component, followed by wet ball mill kneading (inner diameter: 80.2 mm, rotation speed: 80 min ⁻¹ ). . Then dried. Next, the sample was put into the mechano micros (vessel internal diameter: 105 mm, spindle speed: 2000min ^-1 ) manufactured by Nara Machinery Co., Ltd., and the shear stress and the compressive force were applied by grinding. The finished powder is used as a green sheet, and the green sheets are cut at 1 (cm) angles and stacked so as to have a thickness of 1 (mm). Next, it was molded at a pressure of 1000 (kg / cm ³ ). Then, in order to incinerate the resin component, it was calcined at 300 ° C for 10 hours in the air, and then calcined for 2 hours in a reducing atmosphere at the firing temperature shown in Table 1 to Table 4. Thereafter, the mixture was stabilized at 1000 ° C. in nitrogen gas and subjected to reoxidation for 2 hours.

Example 1

Table 1 shows the result of performing the ball mill treatment at rω ² = 2.8 m / s ² for 2 hours and then performing the mechano chemical treatment at rω ² = 2300 m / s ² for 2 hours.

No Firing temperature (℃) Density (g / m ³ ) Average particle diameter (㎛) Minimum particle diameter (㎛) Particle size (㎛) Standard deviation Relative permittivity ε Dielectric loss tanδ (%) Specific resistance (Ωcm) One 1000 5.80 0.22 0.12 0.33 0.0440 1750 0.99 1.8 × 10 ¹³ 2 1010 5.82 0.23 0.13 0.34 0.0485 1760 1.02 2.2 × 10 ¹³ 3 1015 5.83 0.24 0.14 0.36 0.0520 1770 1.00 1.6 × 10 ¹³ 4 1020 5.85 0.25 0.15 0.38 0.0563 1780 1.00 1.5 × 10 ¹³ 5 1025 5.86 0.26 0.16 0.39 0.0580 1798 1.00 1.2 × 10 ¹³ 6 1037 5.88 0.27 0.18 0.44 0.0583 1886 1.08 1.8 × 10 ¹³

Ball mill rω ² = 2.8 m / s ² , processing time 2 hours

Mechano chemical rω ² = 2300m / s ² , processing time 2 hours

( Example 2 )

Table 2 shows the result of performing the ball mill treatment at rω ² = 2.8 m / s ² for 2 hours and then performing the mechano chemical treatment at rω ² = 1294 m / s ² for 2 hours.

No Firing temperature (℃) Density (g / m ³ ) Average particle diameter (㎛) Minimum particle diameter (㎛) Particle size (㎛) Standard deviation Relative permittivity ε Dielectric loss tanδ (%) Specific resistance (Ωcm) One 1000 5.70 Sintering insufficient 2 1010 5.80 0.24 0.13 0.38 0.0590 1782 0.98 1.4 × 10 ¹³ 3 1015 5.81 0.25 0.14 0.40 0.0630 1795 0.99 1.1 × 10 ¹³ 4 1020 5.83 0.26 0.15 0.43 0.0651 1812 1.02 1.2 × 10 ¹³ 5 1025 5.85 0.27 0.16 0.45 0.0662 1830 1.00 1.3 × 10 ¹³ 6 1037 5.87 0.28 0.17 0.49 0.0683 1892 1.06 1.6 × 10 ¹³

Ball mill rω ² = 2.8 m / s ² , processing time 2 hours,

Mechano chemical rω ² = 1294 m / s ² , treatment time 2 hours

Example 3

Table 3 shows the result of performing the ball mill treatment at rω ² = 2.8 m / s ² for 2 hours and then performing the mechano chemical treatment at rω ² = 170 m / s ² for 2 hours.

No Firing temperature (℃) Density (g / m ³ ) Average particle diameter (㎛) Minimum particle diameter (㎛) Particle size (㎛) Standard deviation Relative permittivity ε Dielectric loss tanδ (%) Specific resistance (Ωcm) One 1000 5.60 Sintering insufficient 2 1010 5.74 Sintering insufficient 3 1015 5.78 Sintering insufficient 4 1020 5.83 0.27 0.14 0.48 0.0703 1827 1.03 1.5 × 10 ¹³ 5 1025 5.85 0.28 0.15 0.50 0.0730 1850 1.01 1.6 × 10 ¹³ 6 1037 5.88 0.29 0.16 0.54 0.0792 1899 1.02 1.4 × 10 ¹³

Ball mill rω ² = 2.8 m / s ² , processing time 2 hours,

Mechano chemical rω ² = 170m / s ² , processing time 2 hours

(Comparative Example 1)

Table 4 shows the result when the ball mill treatment is performed for 7.5 hours at rω ² = 2.8 m / s ² in the comparative example and no mechano chemical treatment is performed.

No Firing temperature (℃) Density (g / m ³ ) Average particle diameter (㎛) Minimum particle diameter (㎛) Particle size (㎛) Standard deviation Relative permittivity ε Dielectric loss tanδ (%) Specific resistance (Ωcm) One 1000 5.40 Sintering insufficient 2 1010 5.60 Sintering insufficient 3 1015 5.69 Sintering insufficient 4 1020 5.78 Sintering insufficient 5 1025 5.85 0.28 0.09 0.57 0.0933 1916 0.93 1.3 × 10 ¹³ 6 1037 5.87 0.31 0.14 0.63 0.1038 1939 1.04 1.2 × 10 ¹³

Ball mill rω ² = 2.8 m / s ² , Processing time 7.5 hours

No Mechano Chemical Treatment

The density (g / m ³ ) of the sample was measured using the Archimedes method. It is judged to have sintered at a density of 5.8 g / m ³ or more.

The particle diameter measured the cross-sectional photograph of SEM and measured the length of particle | grains. The average particle diameter (N = 100) was computed by the average of 100 particle diameters.

The measurement of various electrical properties was performed after In-Ga was apply | coated to both end surfaces of the said evaluation sample, and it was set as the capacitor | condenser structure.

The relative dielectric constant? Was measured using an LCR meter under the condition of frequency 1 (kHz) and voltage 1.0 (V), and was calculated from the capacitance, dielectric layer thickness, and internal electrode area obtained by this measurement.

Dielectric loss tan δ (%) was measured using an LCR meter under the same conditions as the relative dielectric constant.

The specific resistance (Ωcm) was measured by applying a voltage of 250 [V] for 1 minute under 25 ° C conditions.

2 is a graph showing the relationship between the firing temperature and the density of the sintered body. 3 is a graph showing the relationship between the firing temperature and the dielectric constant of the sintered body.

In Example 1, as shown in Table 1, firing was possible at 1000 ° C. In Example 2, as shown in Table 2, firing was possible at 1010 ° C. In Example 3, as shown in Table 3, firing was possible at 1020 ° C. In Comparative Example 1, as shown in Table 4, baking required at least 1025 ° C.

The grinding of the mechanical rotating body imparts mechanical energy such as shearing force and compressive force to the powder, whereby the crystal structure of the surface of the powder changes, and it is thought that the solid phase reaction by mechanochemical is promoted. The average particle diameter and the maximum particle diameter were small compared with the comparative example, and the minimum particle diameter became large. This is thought to be good dispersion, the subcomponent and the sintering aid are coated around the main component and the grain growth is suppressed by mixing while giving the shear force and the compressive force by the mechanical rotating body.

In addition, the present inventors made various evaluations about the sample which laminated | stacked the dielectric layer and the electrode.

The thickness of one dielectric layer was 5 mu m, and the effective dielectric layer was 10 layers. In addition, the inner (counter) electrode area per layer was set to 0.91 [mm 2].

The dielectric layer was produced as follows in the same manner as the evaluation test described above.

As a main component, barium titanate was used as a _secondary component, and BaCO ₃ , Dy ₂ O ₃ , MgO, Mn ₃ O ₄ , and a slurry containing a sintering aid was applied to the polyethylene terephthalate (PET) film by a doctor blade method, and then fired. The green sheet which becomes 5 micrometers was shape | molded. Ni paste which is an internal electrode was formed in the obtained green sheet by printing. The laminated body was obtained by laminating | stacking this to 10 layers and thermocompression bonding.

Next, this laminated body was processed so that it might be set to width 2.0mm, length 3.8mm, and thickness 0.6mm. Next, this was heated at 300 ° C. for 10 hours in the air to incinerate the organic binder (resin component). After that, N _{2, 2} hours and fired at a firing temperature shown in Table 5-7 which will be described later in a reducing atmosphere of a gas mixture consisting of H ₂ and H ₂ O. Next, the mixture was stabilized at 1000 ° C. in a nitrogen gas atmosphere and subjected to reoxidation for 2 hours. Thereafter, a conductive paste made of Cu is applied to the outer surface (cutting surface at the opposite position) of the sintered laminate, ignited at a temperature of 650 DEG C in an N ₂ gas atmosphere, and as shown in FIG. The external electrodes 13 and 14 electrically connected with 12) were formed, and the multilayer ceramic capacitor 10 was produced.

In each evaluation sample, the (Ba / Ti) ratio in the barium titanate as a main component was 0.998. The addition amount of Ba element is 1.0 mol part in terms of Ba of Ba compound, and the amount of Dy element added is 0.9 mol part in terms of Dy of Dy compound, and the amount of Mg element added is Mg of Mg compound with respect to 100 mol parts of the main component. Is 1.1 mol parts, and the amount of Mn element added is 0.2 mol parts in terms of Mn of the Mn compound.

The addition amount (weight part) with respect to the sintering aid and main component used for preparation of each sample was similar to said (test method).

In the measurement method of various characteristics, the relative dielectric constant? Measures the capacitance using an LCR meter under the conditions of frequency 1 (kHz) and voltage 1.0 (V), and the capacitance obtained by the measurement, the thickness of the dielectric layer, and the internal electrode. Calculated in area.

The dielectric loss tan δ (%) was measured using an LCR meter under the same conditions as the relative dielectric constant.

As for the capacity change rate, each multilayer ceramic capacitor was placed in a thermostat, and the capacitance was measured using an LCR meter under conditions of frequency 1 (kHz) and voltage (1.0) at each temperature of -55 ° C to 85 ° C.

The results are shown in Tables 5-7. Table 5 shows the result when the ball mill treatment is performed for 2 hours at rω ² = 2.8 m / s ² and the mechano chemical treatment is performed at rω ² = 2300 m / s ² for 2 hours. Table 6 shows the result of performing the ball mill treatment at rω ² = 2.8 m / s ² for 2 hours and then performing the mechano chemical treatment at rω ² = 1294 m / s ² for 2 hours. Table 7 shows the result of performing the ball mill treatment at rω ² = 2.8 m / s ² for 2 hours and then performing the mechano chemical treatment at rω ² = 170 m / s ² for 2 hours.

No. Firing temperature (℃) Relative permittivity ε Dielectric loss tanδ (%) Capacity change rate of -55 ℃ (%) Capacity change rate of 85 ℃ (%) One 1000 2590 5.8 -3.8 -2.0 2 1010 2607 6.1 -2.1 -2.5 3 1015 2631 6.2 -0.1 -4.5 4 1020 2645 6.2 0.1 -5.0 5 1025 2660 6.3 0.3 -5.1 6 1037 2720 6.5 0.4 -5.3

Ball mill rω ² = 2.8 m / s ² , processing time 2 hours

Mechano chemical rω ² = 2300m / s ² , processing time 2 hours

No. Firing temperature (℃) Relative permittivity ε Dielectric loss tanδ (%) Capacity change rate of -55 ℃ (%) Capacity change rate of 85 ℃ (%) One 1010 2600 6.1 -0.1 -3.7 2 1015 2612 6.2 0.1 -4.2 3 1020 2630 6.4 0.3 -4.9 4 1025 2653 6.5 0.4 -5.5 5 1037 2745 6.5 0.5 -5.9

Ball mill rω ² = 2.8 m / s ² , processing time 2 hours

Mechano chemical rω ² = 1294 m / s ² , treatment time 2 hours

No. Firing temperature (℃) Relative permittivity ε Dielectric loss tanδ (%) Capacity change rate of -55 ℃ (%) Capacity change rate of 85 ℃ (%) One 1020 2650 6.20 0.3 -5.0 2 1025 2698 6.30 0.5 -5.6 3 1037 2762 6.50 0.5 -6.0

Ball mill rω ² = 2.8 m / s ² , processing time 2 hours

Mechano chemical rω ² = 170m / s ² , processing time 2 hours

The laminated body obtained using the sintering aid which concerns on this embodiment mentioned above from the result of Tables 5-7 has the X5R standard (E55 (85 degreeC-85 degreeC capacity change rate (25 degreeC standard)) of the Electronics Industries Association (EIA). Less than 15%) was found to be suitable.

1 is a schematic sectional view illustrating a cross-sectional structure of a multilayer ceramic capacitor according to an embodiment of the present invention.

2 is a graph showing the relationship between the firing temperature and the density of the sintered body.

3 is a graph showing the relationship between the firing temperature and the dielectric constant of the sintered body.

<Code Description of Main Parts of Drawing>

10: Multilayer Ceramic Capacitor (MLCC)

11: dielectric layer

12: internal electrode

13,14: external electrode

Claims (5)

A method of producing a dielectric ceramic material comprising barium titanate and a sintering aid, comprising the step of applying at least the barium titanate to a shear stress and a compressive force based on the centrifugal force of a mechanical rotating body applying rω ² = 170 m / s ² or more A method for producing a dielectric ceramic material. In the method for producing a dielectric ceramic material comprising barium titanate and a sintering aid, the shear stress and the compressive force based on the centrifugal force of the mechanical rotating body which mix the barium titanate and the sintering aid and apply rω ² = 170 m / s ² or more. A process for producing a dielectric ceramic material, comprising the step of applying to a mixed powder. delete delete delete

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