KR100893366B1 - Apparatus and method for controlling temperature of semiconductor manufacturing equipment - Google Patents

Abstract

The present invention relates to a temperature control device for controlling the temperature of a substrate in a semiconductor manufacturing facility and a temperature control method thereof. The temperature control device includes a first and second temperature sensors in contact with the heater and non-contact with the substrate, and a temperature controller including a multi-stage PID controller and an offset corrector. The temperature controller feeds back the temperature of the substrate measured by the first and second temperature sensors, detects a deviation from the temperature of the set substrate, and adjusts the temperature of the substrate by correcting the offset. According to the present invention, accurate and rapid temperature control is possible in response to changes in the surrounding environment of the substrate.

Semiconductor manufacturing equipment, temperature controller, non-contact temperature sensor, multi-stage PID controller

Description

Temperature control device of semiconductor manufacturing equipment and its temperature control method {APPARATUS AND METHOD FOR CONTROLLING TEMPERATURE OF SEMICONDUCTOR MANUFACTURING EQUIPMENT}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing facility, and more particularly, to a temperature control apparatus and a temperature control method of a semiconductor manufacturing facility capable of performing temperature correction in real time according to a surrounding environment of a substrate using sensors in contact and non-contact.

In the semiconductor manufacturing process, various processes such as deposition, exposure, etching and polishing are repeatedly performed on a semiconductor substrate. Each of these processes has process conditions appropriate for that process. Herein, the process conditions refer to a process environment for the substrate inside the process chamber or during the process, and, for example, the process temperature supplied to the substrate process temperature, process chamber temperature, process chamber pressure, process chamber, and substrate during the process as main process conditions. The flow rate of the gas, the power supply state, and the like. Therefore, if the process is not performed with each process condition stably provided, the defect rate of the wafer is high.

In particular, in order to satisfy the process conditions regarding temperature among these process conditions, the semiconductor manufacturing equipment adjusts the temperature of a process processing chamber and a board | substrate using a heater, a cooling device, a temperature measuring sensor, etc., for example.

Referring to FIG. 1, the temperature control apparatus 2 of a semiconductor manufacturing apparatus according to an exemplary embodiment heats the substrate W in the center (or upper part) of the spin head 4 on which the substrate W is seated. And a heating plate ie, a heater 6. Moreover, the temperature control apparatus 2 is equipped with the at least 1 temperature sensor 20 arrange | positioned adjacent to the board | substrate W in order to measure the temperature of the board | substrate W in real time. For example, the temperature sensor 20 is provided with a thermocouple or the like and is fixedly installed in the spin head 4.

In addition, the temperature control device 2 includes a temperature control unit 10 electrically connected to the temperature sensor 20. For example, as shown in FIG. 2, the temperature controller 10 is provided with a PID controller 12 and is electrically connected to a power supply unit 8 that supplies power to the heater 6. Accordingly, the PID controller 12 controls the heater 8 by receiving the set temperature of the substrate, that is, the set value, and at this time, feeds back the temperature of the heater 6 measured by the temperature sensor 20 to measure the set value and the measured value. In order to correct the deviation of the temperature, the power supplied from the power supply 8 to the heater 6 is controlled.

However, since the temperature control device 2 is provided in a state where the substrate W and the temperature sensor 20 or the substrate W and the heater 6 are spaced apart at regular intervals, accurate temperature measurement of the substrate W is difficult. Since the temperature of the substrate W is measured in contact with the heater 6, not the actual temperature measurement of the substrate, a deviation occurs between the temperature set to be suitable for the process conditions and the measured temperature. In addition, since the temperature control device 2 only measures the tendency of the temperature of the surface of the substrate W, since the temperature of the substrate W is inferred by sensing the temperature of the heater 6, the surface of the actual substrate W and In response to changes in the surrounding environment, temperature control is impossible in real time. Therefore, a separate substrate temperature control profile operation is required, and by measuring the temperature of the substrate relative to the heater temperature through the profile operation, it is difficult to precisely control the temperature to reach the target value.

An object of the present invention is to provide a temperature control device of a semiconductor manufacturing facility using contact and non-contact temperature sensors and a temperature control method thereof.

Another object of the present invention is to provide a temperature control device of a semiconductor manufacturing facility and a temperature control method thereof for correcting temperature in real time according to the environment around the substrate.

It is still another object of the present invention to provide a temperature control device of a semiconductor manufacturing facility and a temperature control method thereof for controlling a temperature of a substrate using a multi-stage PID controller.

In order to achieve the above objects, the temperature control device of the present invention is characterized by controlling the temperature of a substrate loaded in a semiconductor manufacturing facility using a plurality of temperature sensors. In this way, the temperature control device measures the temperature of the heater and the substrate to correct the deviation between the set temperature and accurately adjust the temperature of the substrate according to the change in the surrounding environment of the substrate.

The temperature control apparatus of the present invention includes a heater which is provided in a spin head on which a substrate is seated and which heats the substrate to regulate temperature; A first temperature sensor provided in the spin head and in contact with the heater to measure a temperature of the heater; A second temperature sensor disposed on an upper surface of the substrate seated on the spin head and movable left and right corresponding to the substrate and generating infrared rays toward the substrate surface to measure a temperature of the substrate; Monitor the temperature of the substrate measured from the first and second temperature sensors in real time, detect a deviation between the temperature measured from the first and / or the second temperature sensor and a set substrate temperature, and determine the deviation And a temperature controller for controlling the heater to correct the temperature of the substrate in correspondence with the.

In one embodiment, the temperature control unit; The heater is primarily controlled to measure the temperature of the heater from the first temperature sensor to be adjusted to a set temperature, and the temperature of the substrate seated on the spin head is measured using the second temperature sensor. The heater is secondarily controlled to correct the temperature of the substrate according to the deviation of.

In another embodiment, the temperature control unit; A first PID controller which receives the temperature of the heater measured from the first temperature sensor and primarily controls the heater to be suitable for a set temperature; An offset corrector configured to receive a temperature of the substrate measured from the second temperature sensor and detect a deviation from a set temperature; And a second PID controller to secondaryly control the heater to correct the temperature of the substrate in response to the deviation detected from the offset corrector.

In another embodiment, the first temperature sensor is provided with a thermocouple, the second temperature sensor is moved to a plurality of positions on the upper surface of the substrate seated on the spin head, and infrared rays from the moved position, respectively It is provided with a non-contact temperature sensor that generates and measures the temperature of the substrate.

In another embodiment, a plurality of heaters may be provided for each of the evenly divided regions in the spin head corresponding to the position of the second temperature sensor; Each of the plurality of heaters is independently controlled by the temperature controller to adjust the temperature of the substrate.

In another embodiment, the heater is provided with one heating plate.

According to another feature of the invention, there is provided a temperature control method of a substrate in a semiconductor manufacturing facility having a plurality of temperature sensors. According to this method, the temperature of a heater is adjusted corresponding to the temperature set by the process recipe. The temperature of the heater is measured using a first temperature sensor in contact with the heater. The temperature of the heater is firstly controlled to feed back the temperature of the heater measured from the first temperature sensor so as to conform to the set temperature. The temperature of the surface of the substrate is measured using a second temperature sensor arranged to be movable on the substrate. It is detected whether a deviation occurs between the temperature measured from the second temperature sensor and the set temperature. If a deviation occurs between the temperature measured by the second temperature sensor and the set temperature, the offset corresponding to the deviation is corrected. The temperature of the heater is then controlled secondary.

In one embodiment, measuring the temperature of the substrate surface using the second temperature sensor; The second temperature sensor is moved from the top of the substrate to at least one substrate position to generate infrared rays to the substrate surface to measure the temperature of the substrate surface.

In another embodiment, a plurality of heaters may be provided for each of the evenly divided regions in the spin head corresponding to the substrate position of the second temperature sensor; Controlling the temperature of the heater primarily / secondarily; The temperature of the substrate is adjusted by controlling the plurality of heaters, respectively.

As described above, the temperature control device of the present invention includes first and second temperature sensors to monitor the temperature of the substrate in real time, and to control the temperature of the substrate in response to changes in the surrounding environment of the substrate, thereby heating the heater and the substrate surface. Correction according to the temperature deviation between and can reach the exact target value, and fast convergence to the target value is possible.

In addition, by monitoring the temperature in real time in response to changes in the ambient temperature of the substrate, it is possible to stabilize and maintain the substrate temperature by controlling the exact temperature.

The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be interpreted as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the components in the drawings, etc. have been exaggerated to emphasize a more clear description.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to FIGS. 3 to 6.

3 is a diagram illustrating a configuration of a semiconductor manufacturing facility according to the present invention.

Referring to FIG. 3, the semiconductor manufacturing apparatus 100 supports a substrate W and has a spin chuck having a rotatable spin head 102, and a temperature and a measured substrate set by monitoring the temperature of the substrate W in real time. And a temperature control device 104 to 110 for detecting whether a deviation occurs in the temperature of the substrate, and adjusting the substrate by correcting the offset according to the deviation.

The spin chuck is provided with a spin head 102 on which the substrate W is seated, a spindle for transmitting rotational force of the driving device to the spin head 102, and is provided inside the spin head 102 to adjust the temperature of the substrate W. And a heater 104. Here, the heater 104 is provided as one heat plate in the center of the spin head 102, but may be provided in plurality in response to the left and right movement of the second temperature sensor 107. In this case, the respective heaters are each disposed in an evenly divided area of the spin head 102, and each heater is independently controllable.

The temperature control devices 104 to 110 may include a first temperature sensor 106 in contact with the heater 104, a second temperature sensor 107 which measures the temperature of the surface of the substrate W in non-contact with the substrate W; , A power supply unit 108 for supplying power to the heater 104, and a temperature control unit 110 provided with a multi-stage PID controller (112, 114 in FIG. 4).

The first temperature sensor 106 is provided with, for example, a thermocouple fixedly disposed at the center of the spin head 104 to measure the temperature SENSE1 between the heater 104 or the substrate W and the spin head 102. To the temperature control unit 110.

The second temperature sensor 107 is disposed to move left and right corresponding to the substrate W mounted on the spin head 102, and is provided as a non-contact temperature sensor capable of correcting emissivity of the substrate, and the spin head 102. Infrared rays are generated at a plurality of positions on the surface of the substrate W seated on the substrate W, and the temperature of the surface of the substrate W is measured. The second temperature sensor 107 generates infrared rays at a plurality of positions (eg, the edge of the substrate, the first middle, the middle, the second middle and the edge positions, etc.) of the surface of the substrate W so that the temperature of the entire substrate is increased. Is measured, and the measured temperature SENSE2 is transmitted to the temperature controller 110. Therefore, the heater 104 is provided with one heating plate. In addition, a plurality of heaters 104 may be disposed for each of the divided regions evenly corresponding to the moving position of the second temperature sensor 107, and each heater may be provided to be independently controlled by the temperature controller 110. have.

The power supply 108 includes, for example, an SCR that is turned on / off by receiving the controls CONTROL1 and CONTROL2 of the temperature controller 110, and receives the control of the temperature controller 110 to heat the substrate W. The power supplied to the heater 104 is adjusted.

The temperature controller 110 controls the heater 104 at a set temperature by using a multi-stage Proportional Integrate Derivative (PID) controller (proportional integral differential controller) 112, 114, and the first temperature sensor 106. The temperature SENSE1 of the measured heater 104 is monitored in real time to control (CONTROL1) the power supply unit 108 to a set temperature to primarily control the temperature of the heater 104. In addition, the temperature controller 110 detects a deviation between the temperature SENSE2 of the substrate measured by the second temperature sensor 107 and the set temperature, corrects an offset in response to the detected deviation, and then supplies the power supply 108. ) Is controlled (CONTROL2) to adjust the temperature of the substrate (W).

Specifically, as shown in FIG. 4, the temperature controller 110 includes first and second PID controllers 112 and 114 and an offset corrector 116.

The first PID controller 112 controls the power supply unit 108 to supply power to the heater 104 in response to the set temperature. At this time, the first PID controller 112 measures the temperature of the heater 104 from the first sensor 106, and feeds back the measured temperature SENSE1 to control the power supply 108 to suit the set temperature. .

The second PID controller 114 feeds back the temperature SENSE2 of the surface of the substrate W measured by the second temperature sensor 107 so as to compare the temperature SENSE2 measured from the second temperature sensor 107 with the set temperature. Detect deviation. The offset corrector 116 then corrects the offset for the deviation detected from the second PID controller 114. Accordingly, the second PID controller 114 monitors the temperature change of the surface of the substrate W by the second temperature sensor 107 in real time, and adjusts the offset according to the deviation of the first and second temperature sensors 106 and 107. The temperature of the substrate W is controlled by the correction. For example, the first and second PID controllers 112 and 114 use the temperature deviation value as a bias parameter in PID control corresponding to the distance d between the heater 104 and the substrate W. FIG.

Therefore, the temperature control device 104 to 110 of the present invention can adjust the temperature in response to the environmental change around the substrate (W), and as shown in FIG. The time to reach the value can be reached as fast as Δt.

6 is a flowchart illustrating a temperature control procedure of a semiconductor manufacturing facility according to the present invention. This procedure is a program processed by the temperature controller 110, which is stored in a memory (not shown) of the temperature controller 110.

Referring to FIG. 6, in step S150, the power supplied to the heater 104 is controlled to adjust the temperature of the heater 104 in response to the temperature (target value) set in the process recipe. In S152, the temperature SENSE1 of the heater 104 is measured using the first temperature sensor 106. Through this, the temperature change of the substrate may be inferred in response to the temperature change of the heater 104. The temperature of the heater 104 is controlled to feed back the heater 104 temperature measured from the first temperature sensor 106 at S154 to suit the set temperature.

In S156, the temperature of the surface of the substrate W is measured using the second temperature sensor 107. For example, the second temperature sensor 107 is moved from the top of the substrate W to at least one substrate W position, for example, to the edge, the middle, and the center position of the substrate W so that the substrate W surface. Infrared rays are generated and the temperature of the surface of the substrate W is measured in response.

In S158, it is detected whether a deviation occurs between the temperature SENSE2 measured from the second temperature sensor 107 and the set temperature.

As a result of the determination, if a deviation occurs between the measured temperature SENSE2 and the set temperature, the procedure proceeds to step S160 to correct the offset corresponding to the deviation, and then controls the temperature of the heater 104 in step S162.

Although the procedures for adjusting the temperature by measuring the temperature of the heater 104 and the substrate W by the first and second temperature sensors 106 and 107 of the above-described steps are described sequentially according to the temporal flow change, these The procedures can be processed substantially simultaneously.

In the above, the configuration and operation of the temperature control device according to the present invention has been shown in accordance with the detailed description and drawings, which are merely described by way of example, and various changes and modifications may be made without departing from the spirit of the present invention. It is possible.

1 is a diagram illustrating a configuration of a general semiconductor manufacturing facility;

FIG. 2 is a block diagram showing the configuration of the PID controller shown in FIG. 1; FIG.

3 illustrates a configuration of a semiconductor manufacturing facility according to the present invention;

4 is a block diagram showing a configuration according to an embodiment of the temperature control unit shown in FIG. 3;

5 is a waveform diagram comparing a state in which a target value is reached in a temperature control device of the present invention and the prior art; And

6 is a flowchart illustrating a temperature control procedure of a semiconductor manufacturing facility according to the present invention.

Explanation of symbols on the main parts of the drawings

100 semiconductor manufacturing equipment 102 spin head

104: heater (heating plate) 106: first temperature sensor

107: second temperature sensor 108: power supply

110: temperature controller 112: first PID controller

114: second PID controller 116: offset corrector

Claims (13)

delete In the temperature control device of the semiconductor manufacturing equipment: A heater provided in the spin head on which the substrate is seated, and controlling the temperature by heating the substrate; A first temperature sensor in contact with the heater and measuring a temperature of the heater; A second temperature sensor disposed on an upper surface of the substrate seated on the spin head and movable left and right corresponding to the substrate and generating infrared rays to the substrate surface to measure a temperature of the substrate; Monitor the temperature of the substrate measured from the first and second temperature sensors in real time, detect a deviation between the temperature measured from the first and second temperature sensors and a set substrate temperature, and respond to the deviation. A temperature controller for controlling the heater to correct the temperature of the substrate; The temperature control unit; The heater is primarily controlled to measure the temperature of the heater from the first temperature sensor to be adjusted to a set temperature, and the temperature of the substrate seated on the spin head is measured using the second temperature sensor. And controlling the heater so as to correct the temperature of the substrate according to the deviation of?. The method of claim 2, The temperature control unit; A first PID controller that receives the temperature of the heater measured from the first temperature sensor and primarily controls the heater to be suitable for a set temperature; An offset corrector configured to receive a temperature of the substrate measured from the second temperature sensor and detect a deviation from a set temperature; And a second PID controller to secondaryly control the heater to correct the temperature of the substrate in response to the deviation detected by the offset corrector. The method of claim 2, The first temperature sensor is provided with a thermocouple, The second temperature sensor may be provided as a non-contact temperature sensor that moves to a plurality of positions on the upper surface of the substrate seated on the spin head, and generates infrared rays from each of the moved positions to measure the temperature of the substrate. Temperature control device in semiconductor manufacturing equipment. The method of claim 4, wherein A plurality of heaters are provided for each of the divided regions evenly inside the spin head corresponding to the position of the second temperature sensor; The plurality of heaters are each independently controlled by the temperature control unit to control the temperature of the substrate, characterized in that the temperature control device. The method of claim 2, The heater is a temperature control device of a semiconductor manufacturing equipment, characterized in that provided with one heating plate. In a method of temperature control of a substrate in a semiconductor manufacturing facility: Adjusting a temperature of a heater that heats the substrate seated on the spin head in response to the temperature set in the process recipe; Measure a temperature of the heater using a first temperature sensor in contact with the heater; Feeding back the temperature of the heater measured from the first temperature sensor and controlling the temperature of the heater to be suitable for the set temperature; Measuring the temperature of the substrate surface using a second temperature sensor movably disposed above the substrate; Detecting whether a deviation occurs between the temperature measured from the second temperature sensor and the set temperature; If a deviation occurs between the temperature measured from the second temperature sensor and the set temperature, correct the offset corresponding to the deviation; next And controlling the temperature of the heater in a secondary manner. The method of claim 7, wherein Measuring the temperature of the substrate surface using the second temperature sensor; And moving the second temperature sensor to at least one substrate position above the substrate to generate infrared rays to the substrate surface to measure the temperature of the substrate surface. The method of claim 8, A plurality of heaters are provided for each of the divided regions evenly inside the spin head corresponding to the position of the substrate of the second temperature sensor; Controlling the temperature of the heater primary and secondary; And controlling the temperature of the substrate by controlling the plurality of heaters, respectively. In the temperature control device of the semiconductor manufacturing equipment: A heater provided in the spin head on which the substrate is seated, and controlling the temperature by heating the substrate; A first temperature sensor in contact with the heater and measuring a temperature of the heater; A second temperature sensor disposed on an upper surface of the substrate seated on the spin head and movable left and right corresponding to the substrate and generating infrared rays to the substrate surface to measure a temperature of the substrate; Monitor the temperature of the substrate measured from the first and second temperature sensors in real time, detect a deviation between the temperature measured from the first and second temperature sensors and a set substrate temperature, and respond to the deviation. A temperature controller for controlling the heater to correct the temperature of the substrate; The temperature control unit; A first PID controller that receives the temperature of the heater measured from the first temperature sensor and primarily controls the heater to be suitable for a set temperature; An offset corrector configured to receive a temperature of the substrate measured from the second temperature sensor and detect a deviation from a set temperature; And a second PID controller to secondaryly control the heater to correct the temperature of the substrate in response to the deviation detected by the offset corrector. In the temperature control device of the semiconductor manufacturing equipment: A heater provided in the spin head on which the substrate is seated, and controlling the temperature by heating the substrate; A first temperature sensor in contact with the heater and measuring a temperature of the heater; A second temperature sensor disposed on an upper surface of the substrate seated on the spin head and movable left and right corresponding to the substrate and generating infrared rays to the substrate surface to measure a temperature of the substrate; Monitor the temperature of the substrate measured from the first and second temperature sensors in real time, detect a deviation between the temperature measured from the first and second temperature sensors and a set substrate temperature, and respond to the deviation. A temperature controller for controlling the heater to correct the temperature of the substrate; The first temperature sensor is provided with a thermocouple, The second temperature sensor may be provided as a non-contact temperature sensor that moves to a plurality of positions on the upper surface of the substrate seated on the spin head, and generates infrared rays from each of the moved positions to measure the temperature of the substrate. Temperature control device in semiconductor manufacturing equipment. The method of claim 11, A plurality of heaters are provided for each of the divided regions evenly inside the spin head corresponding to the position of the second temperature sensor; The plurality of heaters are each independently controlled by the temperature control unit to control the temperature of the substrate, characterized in that the temperature control device. In the temperature control device of the semiconductor manufacturing equipment: A heater provided in the spin head on which the substrate is seated, and controlling the temperature by heating the substrate; A first temperature sensor in contact with the heater and measuring a temperature of the heater; A second temperature sensor disposed on an upper surface of the substrate seated on the spin head and movable left and right corresponding to the substrate and generating infrared rays to the substrate surface to measure a temperature of the substrate; Monitor the temperature of the substrate measured from the first and second temperature sensors in real time, detect a deviation between the temperature measured from the first and second temperature sensors and a set substrate temperature, and respond to the deviation. A temperature controller for controlling the heater to correct the temperature of the substrate; The heater is a temperature control device of a semiconductor manufacturing equipment, characterized in that provided with one heating plate.

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