KR100884327B1 - Thermocouple device and substrate processing apparatus - Google Patents

Thermocouple device and substrate processing apparatus Download PDF

Info

Publication number
KR100884327B1
KR100884327B1 KR1020070031453A KR20070031453A KR100884327B1 KR 100884327 B1 KR100884327 B1 KR 100884327B1 KR 1020070031453 A KR1020070031453 A KR 1020070031453A KR 20070031453 A KR20070031453 A KR 20070031453A KR 100884327 B1 KR100884327 B1 KR 100884327B1
Authority
KR
South Korea
Prior art keywords
thermocouple
tension bar
line
chemical vapor
vapor deposition
Prior art date
Application number
KR1020070031453A
Other languages
Korean (ko)
Other versions
KR20080088757A (en
Inventor
엄평용
Original Assignee
주식회사 유진테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 유진테크 filed Critical 주식회사 유진테크
Priority to KR1020070031453A priority Critical patent/KR100884327B1/en
Publication of KR20080088757A publication Critical patent/KR20080088757A/en
Application granted granted Critical
Publication of KR100884327B1 publication Critical patent/KR100884327B1/en

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586Elements in the interior of the support, e.g. electrodes, heating or cooling devices

Abstract

본 발명은 써모커플을 안정적으로 지지하는 화학기상증착장치의 써모커플 조절장치에 관한 것이다.The present invention relates to a thermocouple adjusting apparatus for chemical vapor deposition apparatus for stably supporting the thermocouple.

상기 T.C라인(160)은 하단 접속점(164a)가 형성된 상부텐션바(164)와, 상단 접속점(167a)를 형성한 하부 텐션바(167)와, 상기 상,하부 텐션바(164)와 하부 텐션바(167)사이에 개재되어 탄력 접속되는 탄성부재(165)으로 탄력 설치되며, 중심관체(140)내에 상부텐션바(164), 탄성부재(165), 하부텐션바(167)를 탄설하고, 그 하단은 하부플랜지(130)에서 접속되고, 그 상단은 세라믹디스크(110)을 관통하여 히터플레이트(100)에 접속되는 제1 T.C라인(161)과; 상기 중심관체(140)의 외측으로 상부텐션바(164), 탄성부재(165),하부텐션바(167)를 원통형 메탈관체(163)내에 설치하되 상부텐션바(164) 상단이 메탈커버(166)(168)로 설치된 제2T.C라인(162)으로 이루어진다.The TC line 160 includes an upper tension bar 164 having a lower connection point 164a, a lower tension bar 167 having an upper connection point 167a, and upper and lower tension bars 164 and a lower tension. It is elastically installed with an elastic member 165 interposed between the bars 167 and elastically connected, and the upper tension bar 164, the elastic member 165, and the lower tension bar 167 are installed in the central tube 140. A lower TC 130 connected to the lower flange 130 and an upper TC connected to the heater plate 100 through the ceramic disk 110; The upper tension bar 164, the elastic member 165, the lower tension bar 167 is installed in the cylindrical metal tube 163 to the outside of the center tube 140, the upper portion of the upper tension bar 164 is the metal cover 166 It consists of a second T.C line 162 installed by 168).

써모커플, 조절라인,화학기상증착장치. Thermocouple, Control Line, Chemical Vapor Deposition System.

Description

써모커플 장치 및 기판처리장치{THERMOCOUPLE DEVICE AND SUBSTRATE PROCESSING APPARATUS}Thermocouple Device and Substrate Processing Equipment {THERMOCOUPLE DEVICE AND SUBSTRATE PROCESSING APPARATUS}

도 1은 종래 화학기상증착장치의 개략도면이고,1 is a schematic diagram of a conventional chemical vapor deposition apparatus,

도 2a,2b는 본 발명 화학기상증착장치의 써모커플 조절장치를 갖는 히터 써포트의 분해사시도이고,Figure 2a, 2b is an exploded perspective view of a heater support having a thermocouple control device of the chemical vapor deposition apparatus of the present invention,

도 3a, 3b는 본 발명 화학기상증착장치의 써모커플 조절장치의 발췌 단면도이고,Figure 3a, 3b is an excerpt cross-sectional view of the thermocouple control device of the chemical vapor deposition apparatus of the present invention,

도 4는 본 발명 화학기상증착장치의 써모커플 조절장치가 적용된 히터 써포트의 단면도이고,4 is a cross-sectional view of a heater support to which a thermocouple control device of the chemical vapor deposition apparatus of the present invention is applied,

도 5는 본 발명 화학기상증착장치의 써모커플 조절장치가 적용된 히터 써포트의 사시도이고,5 is a perspective view of a heater support to which a thermocouple adjusting device of the chemical vapor deposition apparatus of the present invention is applied,

도 6은 본 발명 화학기상증착장치의 써모커플 조절장치가 적용된 화학기상증착장치의 단면도이다.6 is a cross-sectional view of the chemical vapor deposition apparatus to which the thermocouple control device of the chemical vapor deposition apparatus of the present invention is applied.

※ 도면의 주요 부분에 대한 부호의 설명※ Explanation of codes for main parts of drawing

160: 조절라인,161,162:제1,제2T.C라인, 163:메탈관체,160: control line, 161, 162: first, second T.C line, 163: metal tube,

164:상부텐션바,164a:접속점,165:탄성부재, 166:메탈커버, 164: upper tension bar, 164a: connection point, 165: elastic member, 166: metal cover,

167:하부텐션바,167a:하부텐션바, 168:메탈커버,169:조절나사,170:고정나사.167: lower tension bar, 167a: lower tension bar, 168: metal cover, 169: adjustment screw, 170: fixing screw.

본 발명은 써모커플(Thermo Couple)의 조절장치 및 이를 이용한 화학기상증착장치(equipment for chemical vapor deposition)에 관한 것으로 특히, 써모커플의 조절장치를 새롭게 제공하고 오염가스로 부터 이 조절장치가 보호되는 써모커플 접속라인(ThermoCoupleSupportLine, 이하 조절라인이라 함) 및 이를 이용한 화학기상증착장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermocouple control device and an equipment for chemical vapor deposition using the same. In particular, a thermocouple control device is newly provided and the control device is protected from contaminated gas. The present invention relates to a thermocouple connection line (hereinafter referred to as a control line) and a chemical vapor deposition apparatus using the same.

일반적으로 알려진 화학기상증착장치가 첨부 도면중 도1에 도시되어 있다.A generally known chemical vapor deposition apparatus is shown in FIG. 1 of the accompanying drawings.

즉, 챔버(10)의 상부 덮개를 이루되 그 내측에 블럭플레이트(22)와 샤워헤드(24)를 구비한 챔버리드(20)와, 상기 챔버의 하방을 이루는 챔버바디(30)와, 상기 챔버바디(30)와 챔버리드(20)사이에 형성된 가스입,출구(40)(50)와, 히터플레이트(100)와,상부플랜지(120)와, 하부플랜지(130)와, 중심관체(140)와, 상기 하부플랜지(130)로 부터 상기 상부플랜지(120)로 인출됨과 아울러 상기 히터플레이트(100)에 접속되는 전원라인(150)들과, T.C라인(160)과, 벨로우즈(60),받침대(70)로 이루어진다.That is, the chamber lid 20 forming the upper cover of the chamber 10 and having a block plate 22 and a shower head 24 therein, a chamber body 30 forming the chamber below, and the Gas inlet and outlet 40 and 50 formed between the chamber body 30 and the chamber lead 20, the heater plate 100, the upper flange 120, the lower flange 130, the central tube ( 140, the power line 150, which is drawn out from the lower flange 130 to the upper flange 120 and connected to the heater plate 100, TC line 160, bellows (60) , Consisting of a support (70).

이러한 종래 알려진 화학기상증착장치의 히터써포트는 그 하부가 오염가스에 의하여 혹은 후면 가열챔버구조등에 의하여 열화되어 히터써포트의 변형 및 기타 전원 라인, T.C라인의 처짐과 그에 따른 접속불량을 초래하여 히터온도 제어에 따른 챔버내 균일한 증착 혹은 지속 공정을 저해한다.The heater support of the conventional chemical vapor deposition apparatus is deteriorated by the contaminated gas or the rear heating chamber structure, causing deformation of the heater support, sagging of other power lines and TC lines, and consequently poor connection. It inhibits uniform deposition or sustained processes in the chamber under control.

히터써포트의 변형과 부속의 손상에 대응하기 위하여 히터써포트에 설비된 전원라인은 물론 히터 각부의 온도를 측정하므로서 화학기상증착시 온도분포상태를 측정 제어하기 위하여 설비되는 T.C라인 역시 열화되어 처지거나 손상될 수 밖에 없다.In order to cope with the deformation of the heater support and damage to the parts, the power line installed in the heater support, as well as the temperature of each part of the heater, are also deteriorated due to deterioration or damage. It must be.

이러한 챔버내 히터 플레이트의 온도제어를 위하여 히터 온도를 측정하기 위한 T.C라인은 챔버의 미세한 상,하 위치이동에 따라 그 접속부위가 분리되거나 수평 연결시에 하방으로 쳐져 접속상태가 불량하던 문제점이 있었다.In order to control the temperature of the heater plate in the chamber, the TC line for measuring the heater temperature has a problem in that the connection part is separated due to the minute up and down movement of the chamber, or the connection part is struck downward when connected horizontally. .

본 발명은 T.C라인이 챔버내 히터써포트의 하방 회전이나 승하강등의 미세 위치이동에 대응할 수 있는 탄성적인 조절라인가 구현된 화학기상증착장치의 써모커플 조절장치를 제공하는 데에 그 목적이 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide a thermocouple control device for a chemical vapor deposition apparatus in which a T.C line is provided with an elastic control line that can cope with fine position movement such as downward rotation or elevating of a heater support in a chamber.

또한, 본 발명은 T.C라인과 그 조절라인이 챔버내부의 오염가스 및 반사열에 의한 열화로 부터 보호되는 써모커플 조절장치를 제공하는 데에도 그 목적이 있다.It is also an object of the present invention to provide a thermocouple control device in which the T.C line and its control line are protected from deterioration by pollutant gas and reflected heat in the chamber.

본 발명은 오염가스와 열화로 부터 보호됨과 아울러 소정의 위치이동에 탄성적으로 대응하는 T.C라인 조절장치가 적용된 화학기상증착장치를 제공하는 데에도 그 목적이 있다.Another object of the present invention is to provide a chemical vapor deposition apparatus to which the T.C line control device is elastically responded to a predetermined position movement as well as being protected from pollution gas and deterioration.

본 발명의 상기 목적을 달성하기 위한 본 발명 화학기상증착장치의 써모커플 조절장치는,Thermocouple control device of the chemical vapor deposition apparatus of the present invention for achieving the above object of the present invention,

상,하부 플랜지사이에 수직 설치되는 T.C라인의 절곡부분(A)이,The bent portion (A) of the T.C line installed vertically between the upper and lower flanges,

하단 접속점이 형성된 상부텐션바와, 상단 접속점을 형성한 하부 텐션바와, 상기 상,하부 텐션바와 하부 텐션바 사이의 각 접속점에 탄설되는 탄성부재와, 이를 조절하는 조절나사로서 탄성적으로 지지되는 화학기상증착장치의 써모커플 조절장치로서 달성된다.An upper tension bar having a lower connection point, a lower tension bar forming an upper connection point, an elastic member installed at each connection point between the upper and lower tension bars and the lower tension bar, and a chemical vapor structure elastically supported as an adjustment screw to control the same. It is achieved as a thermocouple regulator of the deposition apparatus.

본 발명의 상기 목적을 달성하기 위한 본 발명 화학기상증착장치의 써모커플 조절장치의 상기 T.C라인은 제1T.C라인,제2T.C라인으로 분리되고 세라믹으로 커버된 특징을 갖는다.The T.C line of the thermocouple control device of the chemical vapor deposition apparatus of the present invention for achieving the above object of the present invention is characterized by being separated into a first T.C line, a second T.C line and covered with ceramic.

본 발명의 상기 목적을 달성하기 위한 본 발명 화학기상증착장치의 써모커플 조절장치의 상기 제1T.C라인은 중심관체내에 장입된 상,하부텐션바와 탄성부재로서 탄지됨이 바람직하다.The first T.C line of the thermocouple control device of the chemical vapor deposition apparatus of the present invention for achieving the above object of the present invention is preferably carried by the upper and lower tension bar and the elastic member inserted into the central tube.

본 발명의 상기 목적을 달성하기 위한 본 발명 화학기상증착장치의 써모커플 조절장치의 상기 제2T.C라인은 상,하부텐션바, 탄성부재가 장입된 세라믹관체와, 절곡부(A)를 탄지하는 세라믹커버로서 지지됨이 바람직하다.The second T.C line of the thermocouple control device of the chemical vapor deposition apparatus of the present invention for achieving the above object of the present invention, the upper and lower tension bar, the ceramic tube body is loaded with the elastic member, and the bent portion (A) It is preferably supported as a ceramic cover.

본 발명의 상기 목적을 달성하기 위한 본 발명 화학기상증착장치는,Chemical vapor deposition apparatus of the present invention for achieving the above object of the present invention,

히터플레이트와 결합되는 세라믹디스크와, 상기 세라믹디스크의 저면에 부착 고정되고 장착홈들이 형성된 상부플랜지와, 상기 상부 플랜지와 대응하여 하방에 위치하는 하부플랜지와, 상기 상,하부플랜지의 사이에 연결되는 원통형의 중심관체와,A ceramic disk coupled to a heater plate, an upper flange attached to a bottom surface of the ceramic disk and having mounting grooves formed thereon, a lower flange positioned below the upper flange, and connected between the upper and lower flanges. Cylindrical central tube,

상기 하부플랜지로 부터 상기 상부플랜지로 인출됨과 아울러 상기 히터플레이트에 접속되는 전원라인들;및 상기 상,하부 플랜지 사이에 수직 설치되는 T.C라 인의 절곡부분(A)을 하단 접속점이 형성된 상부텐션바와, 상단 접속점을 형성한 하부 텐션바와, 상기 상,하부 텐션바와 하부 텐션바 사이의 각 접속점에 탄설되는 탄성부재로서 탄성적으로 지지한 써모커플 조절장치를 포함하여 상,하부 플랜지, 중심관체, 전원라인,T.C라인,및 조절라인가 세라믹으로 커버됨과 T.C라인을 안정적으로 지지되는 특징을 갖는다.Power lines drawn from the lower flange to the upper flange and connected to the heater plate; and an upper tension bar having a lower connection point at a bent portion A of the TC line vertically installed between the upper and lower flanges; Upper and lower flanges, a center tube, and a power line, including a lower tension bar having an upper connection point, and a thermocouple adjusting device elastically supported as an elastic member which is installed at each connection point between the upper and lower tension bars and the lower tension bar. , TC line, and control line is covered with ceramic, and the TC line is stably supported.

이하 본 발명의 바람직한 실시예를 첨부 도면에 의거 상세하게 설명하면 다음과 같다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

첨부 도면중 도 2a는 본 발명 화학기상증착장치의 써모커플 조절장치가 구현된 히터써포트 분해사시도이고, 도 2B는 본 발명 화학기상증착장치의 써모커플 조절장치가 구현된 히터써포트 분해사시도이고, 도 3a는 본 발명 화학기상증착장치의 제1T.C라인의 써모커플 조절장치의 발췌 단면도이고, 도 3b는 본 발명 화학기상증착장치의 제2T.C라인의 써모커플 조절장치 발췌단면도이고, 도 4는 본 발명 화학기상증착장치의 제2T.C라인의 써모커플 조절장치의 단면도이다.2A is an exploded perspective view of a heater support in which the thermocouple control apparatus of the chemical vapor deposition apparatus of the present invention is implemented, and FIG. 2B is an exploded perspective view of a heater support in which the thermocouple control apparatus of the chemical vapor deposition apparatus of the present invention is implemented. 3a is a cross-sectional view of the thermocouple control device of the first T.C line of the chemical vapor deposition apparatus of the present invention, Figure 3b is a cross-sectional view of the thermocouple control device of the second T.C line of the chemical vapor deposition device of the present invention, Figure 4 Is a cross-sectional view of the thermocouple control device of the second T.C line of the chemical vapor deposition apparatus of the present invention.

상기 도면들에 따르는 본 발명 화학기상증착장치의 써모커플 조절장치(160)는,Thermocouple control device 160 of the chemical vapor deposition apparatus of the present invention according to the drawings,

크게 상부텐션바(164)와, 하부 텐션바(167)와, 탄성부재(165) 및 조절나사(169)로 이루어진 제1T.C 조절라인과, 상부텐션바(164)와, 하부 텐션바(167)와, 탄성부재(165)와, 메탈관체(163)와, 메탈커버(166),(168)와, 조절나사(169)로 이루어진 제2T.C조절라인으로 이루어진다.The first T.C adjusting line consisting of the upper tension bar 164, the lower tension bar 167, the elastic member 165 and the adjustment screw 169, the upper tension bar 164, and the lower tension bar ( 167, the elastic member 165, the metal tube 163, the metal cover 166, 168, and the second T.C adjusting line consisting of the adjusting screw (169).

구체적으로 상기 제1T.C라인(161),제2T.C라인(162)은 각각 세라믹으로 커버 (피착)된 상태로 중심관체(140)내측에 제1T.C조절라인이 설치되고, 중심관체(140)의 외곽측에 제2T.C 조절라인이 설치된다.In detail, the first T.C line 161 and the second T.C line 162 are each covered with ceramic, and the first T.C control line is installed inside the central tube 140. The second T.C control line is installed on the outer side of the 140.

이러한 제1,제2T.C조절라인(160)은 공통적으로 하단 접속점(164a)가 형성된 상부텐션바(164)와, 상단 접속점(167a)를 형성한 하부 텐션바(167)와, 상기 상,하부 텐션바(164)와 하부 텐션바(167)사이의 각 접속점(164a)(167a)에 탄설되는 탄성부재(165)및 하부 플랜지(130)에서 탄력이 조절되는 조절나사(169)로서 탄력 지지된다.The first and second T.C control lines 160 have a common upper tension bar 164 having a lower connection point 164a, a lower tension bar 167 having an upper connection point 167a, and the upper, Elastic support as an elastic member 165 which is installed at each connection point 164a and 167a between the lower tension bar 164 and the lower tension bar 167 and an adjustment screw 169 which is elastically adjusted at the lower flange 130. do.

즉, 상기 제1T.C라인(161)은 중심관체(140)내에 장입된 상,하부텐션바(164)(167)과 탄성부재(165)로서 탄지되며, 상기 제2T.C라인(162)은 상,하부텐션바(164)(167), 탄성부재(165)가 장입된 메탈관체(163)와, 절곡부(A)를 탄지하는 메탈커버(166)(168)로서 지지되며, 상기 각 T.C라인(161)(162)들은 하부플랜지(130)저부에서 조절나사(169)가 나사로 맞추어져 그 탄성력을 조절하게 된다.That is, the first T.C line 161 is supported by the upper and lower tension bars 164 and 167 and the elastic member 165 inserted into the central tube 140, the second T.C line 162. The upper and lower tension bars 164 and 167 are supported by the metal tube 163 into which the elastic member 165 is inserted, and the metal covers 166 and 168 holding the bent portion A, respectively. The TC lines 161 and 162 adjust the elastic force by adjusting the adjusting screw 169 to the bottom of the lower flange 130.

한편, 상기 메탈커버(166)(168) 혹은 기타 하부플랜지(130)의 조립 고정을 위하여 고정나사(170)들이 사용된다.Meanwhile, fixing screws 170 are used to assemble and fix the metal covers 166 and 168 or the lower flange 130.

첨부 도면중 도 5는 본 발명 써모커플 조절장치가 적용된 화학기상증착장치의 히터써포트의 사시도이고, 도 6은 본 발명 써모커플 조절장치가 적용된 화학기상증착장치의 단면도이다.5 is a perspective view of a heater support of a chemical vapor deposition apparatus to which the thermocouple control device of the present invention is applied, and FIG. 6 is a cross-sectional view of a chemical vapor deposition apparatus to which the thermocouple control device of the present invention is applied.

상기 도면들에 따르는 본 발명 써모커플 조절장치를 이용한 화학기상증착장치는,Chemical vapor deposition apparatus using the thermocouple control device of the present invention according to the drawings,

히터플레이트(100)와 결합되는 세라믹디스크(110)와, 상기 세라믹디스 크(110)의 저면에 부착 고정되고 장착홈(122)(123)들이 형성된 상부플랜지(120)와, 상기 상부 플랜지(120)와 대응하여 하방에 위치하는 하부플랜지(130)와, 상기 상,하부플랜지(120)(130)의 사이에 연결되는 원통형의 중심관체(140)와, 상기 하부플랜지(130)로 부터 상기 상부플랜지(120)로 인출됨과 아울러 상기 히터플레이트(100)에 접속되는 전원라인(150)들과, 상기 상,하부 플랜지(120)(130)사이에 수직 설치되는 T.C라인(161)(162)과 이들을 탄성적으로 지지하는 써모커플 조절라인(160)으로 이루어진다.The ceramic disk 110 coupled to the heater plate 100, the upper flange 120 is fixed to the bottom surface of the ceramic disk 110, the mounting grooves 122, 123 are formed, and the upper flange 120 And a lower flange 130 positioned below and corresponding to the upper and lower flanges 120 and 130, and a cylindrical central tube 140 connected between the upper and lower flanges 120 and 130, and the upper portion from the lower flange 130. TC lines 161 and 162 which are drawn out to the flange 120 and are vertically installed between the power lines 150 connected to the heater plate 100 and the upper and lower flanges 120 and 130. It consists of a thermocouple control line 160 to elastically support them.

이러한 구성으로 본 발명 화학기상증착장치는 상,하부 플랜지, 중심관체, 전원라인,T.C라인 및 조절라인이 세라믹으로 커버됨과 써모커플(혹은 T.C라인)을 안정적으로 지지하게 된다.In this configuration, the chemical vapor deposition apparatus of the present invention covers the upper, lower flange, the center tube, the power line, the T.C line, and the control line with ceramic and stably supports the thermocouple (or T.C line).

이와 같이 이루어진 본 발명 화학기상증착장치의 써모커플 조절장치는 상,하부 플랜지(120)(130)사이에 수직 설치되는 제1T.C라인(161)의 절곡부분(A)이 중심관체(140)내에 장입되고, 하단 접속점(164a)가 형성된 상부텐션바(164)와, 상단 접속점(167a)를 형성한 하부 텐션바(167)와, 상기 상,하부 텐션바(164)와 하부 텐션바(167)사이의 각 접속점(164a)(167a)에 탄설되는 탄성부재(165)로서 탄성적으로 지지되고, 탄성력을 조절하기 위하여 조절나사(169)가 하부 플랜지(130)에 나사맞춤되어 있다.The thermocouple control device of the chemical vapor deposition apparatus of the present invention made as described above has a bent portion (A) of the first T.C line 161 vertically installed between the upper and lower flanges (120, 130) of the central tube (140). The upper tension bar 164, which is inserted into the lower connection point 164a, the lower tension bar 167 forming the upper connection point 167a, and the upper and lower tension bars 164 and the lower tension bar 167. Is elastically supported as an elastic member 165 which is installed at each of the connection points 164a and 167a, and an adjustment screw 169 is screwed onto the lower flange 130 to adjust the elastic force.

또한, 상기 제2T.C라인(162)은 하단 접속점(164a)가 형성된 상부텐션바(164)와, 상단 접속점(167a)를 형성한 하부 텐션바(167)와, 상기 상,하부 텐션바(164)와 하부 텐션바(167)사이의 각 접속점(164a)(167a)에 탄설되는 탄성부재(165)와, 상, 하부텐션바(164)(167)가 장입된 메탈관체(163)와, 제2T.C라인(162)의 절곡부(A)를 메탈커버(166)(168)로서 지지하여서 된다.In addition, the second T.C line 162 may include an upper tension bar 164 having a lower connection point 164a, a lower tension bar 167 having an upper connection point 167a, and upper and lower tension bars 162. An elastic member 165 installed at each connection point 164a and 167a between the 164 and the lower tension bar 167, and a metal tube 163 into which the upper and lower tension bars 164 and 167 are loaded; The bent portion A of the second T.C line 162 may be supported as the metal covers 166 and 168.

따라서 하부플랜지(130)일체의 받침부재(70)가 회전작동등의 미세 상,하동의 유동이 있더라도 T.C라인(161)(162)들의 접점이 탄력적으로 접속되어 있어 히터플레이트의 각 부위의 온도 검출이 안정적으로 검출된다.Therefore, even if the support member 70 of the entire lower flange 130 has a flow of fine up and down movement such as rotation operation, the contacts of the TC lines 161 and 162 are elastically connected to detect the temperature of each part of the heater plate. This is stably detected.

이상과 같이 본 발명 화학기상증착장치의 써모커플 조절장치는 히터 써포트의 회전등의 미세한 상,하동으로 유동하여도 적절하게 T.C라인(161)(162)들의 접점이 탄력적으로 받쳐져 있어 히터플레이트의 각부분 온도가 안정적으로 검출되는 효과를 갖는다.As described above, the thermocouple control device of the chemical vapor deposition apparatus of the present invention is suitably elastically supported by the contacts of the TC lines 161 and 162 even when the microfluidic device flows in a fine up and down motion such as the rotation of the heater support. Each part temperature is stably detected.

아울러 T.C라인을 지지하기 위한 새로운 조절장치에 더하여 챔버내부의 오염가스 및 반사열에 의한 열화로부터 T.C라인이 보호되는 효과도 있다.In addition to the new control device for supporting the T.C line, the T.C line is also protected from deterioration due to polluted gases and reflected heat inside the chamber.

본 발명은 결국 이러한 T.C라인의 열화로부터 보호되는 수단이 강구됨과 아울러 이들 T.C라인을 안정적으로 지지하도록 하는 조절장치를 통하여 화학기상증착장치전체의 어떠한 미세유동에도 탄력적으로 대응하므로서 안정적으로 히터플레이트의 온도가 검출되는 화학기상증착장치를 제공하게 되는 것이다.According to the present invention, the means for protecting the TC line from deterioration is determined, and the temperature of the heater plate can be stably maintained by flexibly responding to any micro-flow of the entire chemical vapor deposition apparatus through a control device for stably supporting the TC line. To provide a chemical vapor deposition apparatus is detected.

Claims (5)

히터플레이트;Heater plate; 상기 히터플레이트에 접촉되는 일단을 가지며, 상기 일단을 통해 상기 히터플레이트의 온도를 측정하는 써모커플라인; 및A thermocouple having one end in contact with the heater plate and measuring a temperature of the heater plate through the one end; And 상기 써모커플라인과 접촉하는 일단을 가지며, 상기 일단을 통해 상기 써모커플라인을 가압하여 상기 써모커플라인의 일단을 상기 측정대상물에 밀착시키는 상부텐션바를 포함하는 것을 특징으로 하는 기판처리장치.And an upper tension bar having one end in contact with the thermocouple and pressurizing the thermocouple through the one end to bring the end of the thermocouple into close contact with the measurement object. 제1항에 있어서,The method of claim 1, 상기 써모커플라인은 상기 히터플레이트의 반경방향과 대체로 나란한 절곡부를 구비하며,The thermocouple has a bent portion substantially parallel to the radial direction of the heater plate, 상기 상부텐션바의 일단은 상기 절곡부와 접촉하는 것을 특징으로 하는 기판처리장치.One end of the upper tension bar is in contact with the bent portion substrate processing apparatus. 제1항에 있어서,The method of claim 1, 상기 기판처리장치는 상기 상부텐션바에 탄성력을 제공하는 탄성부재를 더 포함하며,The substrate processing apparatus further includes an elastic member for providing an elastic force to the upper tension bar, 상기 상부텐션바는 상기 탄성력에 의해 상기 써모커플라인을 가압하는 기판처리장치.The upper tension bar is a substrate processing apparatus for pressing the thermocouple by the elastic force. 삭제delete 측정대상물에 접촉되는 일단을 가지며, 상기 일단을 통해 상기 측정대상물의 온도를 측정하는 써모커플라인; 및A thermocouple having an end in contact with a measurement object and measuring a temperature of the measurement object through the one end; And 상기 써모커플라인과 접촉하는 일단을 가지며, 상기 일단을 통해 상기 써모커플라인을 가압하여 상기 써모커플라인의 일단을 상기 측정대상물에 밀착시키는 상부텐션바를 포함하며,And an upper tension bar having one end in contact with the thermocouple, and pressurizing the thermocouple through the one end to bring one end of the thermocouple into close contact with the measurement object. 상기 써모커플라인은 상기 상부텐션바와 대체로 수직한 절곡부를 구비하고, 상기 상부텐션바의 일단은 상기 절곡부와 접촉하는 것을 특징으로 하는 써모커플 장치.And the thermocouple has a bent portion substantially perpendicular to the upper tension bar, wherein one end of the upper tension bar is in contact with the bent portion.
KR1020070031453A 2007-03-30 2007-03-30 Thermocouple device and substrate processing apparatus KR100884327B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070031453A KR100884327B1 (en) 2007-03-30 2007-03-30 Thermocouple device and substrate processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070031453A KR100884327B1 (en) 2007-03-30 2007-03-30 Thermocouple device and substrate processing apparatus

Publications (2)

Publication Number Publication Date
KR20080088757A KR20080088757A (en) 2008-10-06
KR100884327B1 true KR100884327B1 (en) 2009-02-18

Family

ID=40150742

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070031453A KR100884327B1 (en) 2007-03-30 2007-03-30 Thermocouple device and substrate processing apparatus

Country Status (1)

Country Link
KR (1) KR100884327B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101302157B1 (en) * 2010-12-27 2013-08-30 엘아이지에이디피 주식회사 Apparatus for chemical vapor deposition
US11037760B2 (en) 2018-06-18 2021-06-15 Samsung Electronics Co., Ltd. Temperature controller, temperature measurer, and plasma processing apparatus including the same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6358856B2 (en) 2014-05-29 2018-07-18 東京エレクトロン株式会社 Electrostatic adsorption device and cooling processing device
WO2019102794A1 (en) * 2017-11-24 2019-05-31 トーカロ株式会社 Heat-generating member

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528480A (en) 1978-08-22 1980-02-29 Matsushita Electric Ind Co Ltd Gas heater
JPH11105106A (en) 1997-10-06 1999-04-20 Japan Steel Works Ltd:The Structure of thermocouple mount for heating cylinder
KR20040044005A (en) * 2002-11-20 2004-05-27 주식회사 포스코 A T-type Thermocouple of mold in continuation casting processing
KR20070030611A (en) * 2005-09-13 2007-03-16 삼성전자주식회사 Thermocouple fixing structure for semiconductor manufacturing equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5528480A (en) 1978-08-22 1980-02-29 Matsushita Electric Ind Co Ltd Gas heater
JPH11105106A (en) 1997-10-06 1999-04-20 Japan Steel Works Ltd:The Structure of thermocouple mount for heating cylinder
KR20040044005A (en) * 2002-11-20 2004-05-27 주식회사 포스코 A T-type Thermocouple of mold in continuation casting processing
KR20070030611A (en) * 2005-09-13 2007-03-16 삼성전자주식회사 Thermocouple fixing structure for semiconductor manufacturing equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101302157B1 (en) * 2010-12-27 2013-08-30 엘아이지에이디피 주식회사 Apparatus for chemical vapor deposition
US11037760B2 (en) 2018-06-18 2021-06-15 Samsung Electronics Co., Ltd. Temperature controller, temperature measurer, and plasma processing apparatus including the same

Also Published As

Publication number Publication date
KR20080088757A (en) 2008-10-06

Similar Documents

Publication Publication Date Title
KR100884327B1 (en) Thermocouple device and substrate processing apparatus
KR100567967B1 (en) Semiconductor wafer temperature measurement and control thereof using gas temperature measurement
JP2697992B2 (en) Wafer support basket assembly with thermocouple
EP1628161A2 (en) Lithographic apparatus and device manufacturing method
US20010017296A1 (en) Fluid heating apparatus
US7802916B2 (en) Differential scanning calorimeter
JP5161469B2 (en) Plasma processing equipment
US20150260665A1 (en) Thermal Analyzer
WO2008001891A1 (en) Inspecting device, and inspecting method
KR20100129566A (en) Substrate supporting unit and substrate processing apparatus including the same
JPS61219841A (en) Apparatus for mounting contact type temperature sensor
JP6650887B2 (en) Air flow diverter for reduced sample temperature gradient
JP4653358B2 (en) Integrated valve
US4269710A (en) Chromatographic apparatus
US20100314246A1 (en) Sputter-coating apparatus having heating unit
US20160307770A1 (en) Method and device for treating objects with a liquid
JP4185028B2 (en) Differential scanning calorimeter with cooling mechanism
KR100831947B1 (en) Heater support and chemical vapor deposition apparatus for using the same
KR100317239B1 (en) Spike type thermocouple element for detecting furnace temperature
CN112640076A (en) Flatness measurement of susceptor for display CVD chamber
JP3636111B2 (en) Thermomechanical analyzer
EP3259575B1 (en) Technique for temperature controlling polarimeter sample cells
CN217764471U (en) Coil stabilizing device and induction furnace
JPH10260155A (en) Sensor device
KR20100129287A (en) System and methods for conservation of exhaust heat energy

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E90F Notification of reason for final refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130129

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20140128

Year of fee payment: 6

FPAY Annual fee payment

Payment date: 20150202

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20160126

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20190130

Year of fee payment: 11

FPAY Annual fee payment

Payment date: 20200128

Year of fee payment: 12