KR100867738B1 - Atmospheric apparatus for forming thin metal using laser - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film deposition apparatus, and more particularly, to an atmospheric pressure thin film deposition apparatus using a laser for efficiently depositing a thin film by forming a flow path according to the type and use of a gas introduced into a chamber.

Atmospheric pressure thin film deposition apparatus using a laser according to the present invention, when forming a metal thin film on the object, a protective film raw material storage unit for storing a protective film raw material for forming a protective film or insulating film on the top of the metal thin film, and the protective film A protective film gas supply unit for supplying a protective film gas to the raw material storage unit to supply the protective film material to the chamber.

According to a feature of the present invention, the chamber is formed of a detachable upper chamber and a lower chamber, and the thin film deposition gas and the protective film gas are supplied between the upper chamber and the lower chamber and residual metals and gases generated after the thin film deposition are provided. A first flow passage forming plate and a second flow passage forming plate, on which a gas flow path for discharge is formed, a first sealing member formed at a connection portion between the first and second flow passage forming plates, the upper chamber and the lower chamber, and a second It consists of a sealing member and a third sealing member.

Chamber, Thin Film, Metal Raw Materials

Description

Atmospheric apparatus for forming thin metal using laser

1 is a schematic view of a thin film deposition apparatus according to the present invention.

2 is an overall configuration diagram of a chamber according to the present invention.

Figure 3 is a detailed configuration of the upper chamber according to the present invention.

4 is a detailed configuration diagram of the first sealing member according to the present invention.

5 is a detailed configuration diagram of the first flow path forming plate according to the present invention.

6 is a plan view of a first flow path forming plate according to the present invention;

7 is a cross-sectional view A-A of the first flow path forming plate according to the present invention;

8 is a detailed configuration diagram of a second sealing member according to the present invention.

9 is a detailed configuration diagram of the second flow path forming plate according to the present invention.

10 is a detailed configuration diagram of the third sealing member according to the present invention.

11A and 11B are plan views of the lower chamber according to the present invention.

12 is a cross-sectional view B-B of the lower chamber according to the present invention.

13 is an overall flowchart of a thin film deposition method according to the present invention.

** Description of the main symbols in the drawings **

100: chamber 110: upper chamber

111: metal raw material inlet 112: protective film gas inlet

113a: first high pressure gas inlet 113b: second high pressure gas inlet

114a: first exhaust port 114b: second exhaust port

120: first sealing member 121: first metal raw material supply passage

122: gas supply flow path for first protective film 130: first flow path forming plate

131: second metal raw material supply passage 132: second protective film gas supply passage

140: second sealing member 150: second flow path forming plate

141,151: first high pressure gas supply passage 142,152: second high pressure gas supply passage

143, 153: first discharge passage 160: third sealing member

161: first concentric euro 162: second concentric euro

163: third concentric euro 164: second discharge euro

170: lower chamber 171: first chamber concentric flow path

172: second chamber concentric channel 173: third chamber concentric channel

174: purge gas inlet 175: purge gas injection

200: metal raw material storage unit for thin film deposition 300: raw material storage unit for the protective film

400: thin film deposition gas supply unit 500: protective film gas supply unit

600: exhaust portion P: thin film object

 BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film deposition apparatus, and more particularly, to an atmospheric pressure thin film deposition apparatus using a laser for efficiently depositing a thin film by forming a flow path according to the type and use of a gas introduced into a chamber.

Thin film means a thin film having a thickness of several μm or less that cannot be realized by machining. The oil film on the surface of the water, the film of the soap bubbles, the rust of the metal surface, the tin, the zinc film of tin metal, the tin film, etc. are included in the thin film, but other metals, semiconductors, or insulators are used as materials. Thin films, insulating thin films, compound semiconductor thin films, magnetic thin films, dielectric thin films, integrated circuits, superconducting thin films, etc., may be subjected to a predetermined vacuum deposition method (vapor drying method) using electroplating, oxidation in a gas or liquid, compound pyrolysis, electron beam deposition, laser It is made by the beam deposition method or the like.

When a substance becomes a thin film, its physical and chemical properties change greatly. For example, a metal which is not burned may burn when it is in a thin film state. In general, the viscosity is increased, the surface tension is reduced and the coloration phenomenon is caused by the interference of light. These characteristics are used for experiments on various physics principles and for the manufacture of chemical machines.

Semiconductor thin films are typically manufactured using methods by vapor deposition. There are many methods for deposition, but vacuum deposition and deposition plating are commonly used. Vacuum evaporation refers to the heating of a small piece of metal or nonmetal in a vacuum to attach the vapor to an object surface. Deposition plating is a method of forming a thin layer on the surface by putting the object and the metal to be plated in a vacuum and heating the metal to condense on the surface of the object.

However, this deposition plating method is difficult to apply to bulky ones because it is a method of placing a semiconductor or flat panel display to be deposited in a vacuum tank (chamber) in which a vacuum is formed and blowing a metal using a laser. Because of the manufacturing difficulties, as well as high cost occurs.

In order to improve such a conventional problem, a method of depositing a thin film in the air has recently been used.

In particular, thin film transistor liquid crystal panels (TFT-LCDs) have been widely used in recent years. After fabrication of such a liquid crystal display substrate, undesired short-circuit wiring patterns may be disconnected or opened. A repair process such as connecting the wiring patterns) is followed to reduce defects and increase yield. The apparatus used at this time is a thin film deposition apparatus.

The principle of the thin film deposition apparatus for repair is simply the application of a laser-induced chemical vapor deposition method, which focuses by irradiating a laser beam to a part of a substrate under a precursor gas atmosphere containing a deposition target material. Local chemical vapor deposition is caused at, and the wiring pattern is disconnected by the thin film pattern formed through this, and a metal thin film is deposited on a desired portion.

Such thin film deposition apparatuses require large sized closed equipment such as vacuum chambers in recent years, but recently, a thin film deposition apparatus for repairs, which can be processed at an open atmospheric pressure, is widely used.

However, such a conventional thin film deposition apparatus has a weak adhesive strength after thin film deposition, there is a problem that the deposited thin film is peeled off due to a process after thin film deposition, for example, a cleaning process.

The present invention is to solve the above problems, it is an object to form a high-pressure gas inlet for forming a protective film in the chamber of the thin film deposition apparatus.

In addition, an object of the present invention is to provide a thin film deposition apparatus in which a metal raw material gas for metal thin film deposition and a gas injection port for a protective film for forming a protective film are separately formed in a chamber, and flow paths of these gases are formed.

In addition, the present invention is a thin film deposition that can prevent the leakage of gas by inserting and bonding a sealing member formed with a flow path having the same shape as the flow path formed in the flow path forming plate between the flow path forming plate and the flow path forming plate formed in each chamber in the chamber It is an object to provide a device.

The present invention relates to an atmospheric pressure thin film deposition apparatus using a laser, the chamber is spaced apart from the thin film deposition object at a predetermined interval, the chamber having an optical window and an empty space for accommodating a high pressure gas is formed below the optical window. And a thin film deposition metal raw material storage unit storing the thin film deposition metal raw material in the chamber, and a thin film deposition gas supplied to the thin film deposition metal raw material storage unit to supply the thin film deposition metal raw material to the chamber. An atmospheric pressure thin film deposition apparatus using a laser including a gas supply unit for thin film deposition, and an exhaust unit for pumping a metal raw material and a high pressure gas supplied to the chamber, when forming a metal thin film on the object, the upper portion of the metal thin film. A protective film raw material storage unit for storing a protective film raw material for forming a protective film or an insulating film; A protective film gas supply unit for supplying the protective film gas to the protective film raw material storage unit for supplying the protective film raw material to the chamber, wherein the chamber is composed of a removable upper chamber and the lower chamber, the upper chamber and A first flow path forming plate and a second flow path forming plate having a gas flow path for supplying the thin film deposition gas and the protective film gas and discharging the remaining metal and gas generated after the thin film deposition between the lower chambers; And a first sealing member, a second sealing member, and a third sealing member formed at a connection portion between the first and second flow path forming plates, the upper chamber, and the lower chamber.

Preferably, the upper chamber is connected to the metal raw material storage unit for thin film deposition, a metal raw material inlet for supplying a metal raw material for thin film deposition, and a protective film for supplying a gas for the protective layer connected to the protective gas supply unit. A gas inlet, two high pressure gas inlets connected to the thin film deposition gas supply unit to supply the thin film deposition gas, and two exhaust ports for discharging residual metal and high pressure gas generated after the thin film deposition are formed, The chamber is characterized in that the concentric circular first chamber concentric flow path, the second chamber concentric flow path and the third chamber concentric flow path connected to the inlet or exhaust port are formed.

On the other hand, the atmospheric pressure thin film deposition method using a laser, the first step of arranging the chamber at a predetermined interval on the thin film deposition object; A second step of supplying a thin film deposition metal raw material to the chamber using a thin film deposition gas; A third step of depositing a thin film by irradiating the chamber with a laser; A fourth step of supplying a protective film material to the chamber by using a gas for the protective film; A fifth step of depositing a protective film by irradiating the chamber with a laser; And discharging the gas remaining after the deposition through an exhaust channel of the chamber. Characterized in that it comprises a.

Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.

1 is a schematic view showing an atmospheric pressure thin film deposition apparatus (hereinafter, referred to as a 'thin film deposition apparatus') using a laser according to the present invention. Referring to the schematic configuration, a predetermined interval is spaced from the thin film deposition object P. Referring to FIG. To form the chamber 100, the thin film deposition metal raw material storage unit 200 storing the thin film deposition metal raw material, and the thin film deposition object P on the metal thin film, a protective film on the top of the metal thin film. Alternatively, a high pressure gas is supplied to the protective film raw material storage unit 300 and the thin film deposition metal raw material storage unit 200 for storing the protective film raw material for forming the insulating film to deposit the thin film on the chamber 100. Protective film gas supply to supply a high-pressure gas to the thin film deposition gas supply unit 400 and the protective film raw material storage unit 300 to supply the metal raw material to supply the protective film raw material to the chamber 100. The unit 500 and an exhaust unit 600 connected to the chamber 100 to pump the metal raw material and the high pressure gas supplied thereto.

The metal raw material stored in the thin film deposition metal raw material storage unit 200 is chromium (Cr), molybdenum (Mo), tungsten (W), iron (Fe), copper (Cu), gold (Au), silver (Ag) ), Platinum (Pt), nickel (Ni), tantalum (Ta) or titanium (Ti) may be a variety of metals. Here, the thin film deposition metal raw material storage unit 200 and the protective film raw material storage unit 300 is not classified according to the type of raw material, but according to the purpose. That is, the two raw material storage units 200 and 300 may supply the same raw material. However, the supply gas for supplying the raw material to the chamber is different depending on the purpose. For example, the high pressure gas (hereinafter, 'thin film deposition gas') supplied to the thin film deposition metal raw material storage unit 200 is an inert gas such as nitrogen gas or argon, and is supplied to the protective film raw material storage unit 300. Gas (hereinafter, 'gas for protective film') is generally used for depositing a protective film or insulating film in the semiconductor or display field.

The protective gas supply unit 500 injects the protective gas into the chamber 100 via the protective film raw material storage unit 300, but part of the protective film gas supply unit 500 directly passes through the protective film raw material storage unit 300. 100).

At this time, the protective film gas and the gas not passing through the protective film raw material storage unit 300 is mixed and injected into the chamber 100 before reaching the chamber 100, the protective film raw material storage unit 300 The gas passing through and gas not passing through are controlled through the flow rate control.

The thin film deposition metal raw material stored in the thin film deposition metal raw material storage unit 200 is supplied into the chamber 100 by a high pressure gas and used for thin film deposition. The high-pressure gas is not only used to supply the metal raw material, but also injected to prevent the thin film from being deposited on the optical window of the chamber 100, and form an air curtain in the chamber 100 to form external air and raw materials. It can also be injected to block the gas. The gas transfer line is formed separately according to the above purpose. Although not shown in the gas transfer line, a flow control device and a valve for controlling the flow rate of the gas and opening and closing of each line are formed.

A certain empty space is formed under the optical window, and the injected high pressure gas is stored, and when a laser is irradiated, a thin film is deposited on the object.

Of course, in addition to these configurations, a means for arranging the chamber, various tables, or apparatuses for loading or unloading a substrate, ie, an object to be deposited, will be needed, but the rest of the configurations are not directly related to the present invention. It will be omitted.

2 is an overall configuration of the chamber according to the present invention, as shown in the mounting bracket (B) for mounting the chamber to the thin film deposition apparatus on one side of the upper chamber 110 is attached, the mounting bracket Many mounting holes are formed in (B).

In addition, the mounting bracket B is provided with a plurality of gas inlets and exhaust ports for gas injection. The gas injection port and the exhaust port are connected to the upper chamber 110 to inject or exhaust gas.

The upper chamber 110 is coupled to the lower chamber 170 in which three concentric circles (hereinafter referred to as first concentric circles, second concentric circles, and third concentric circles) are formed.

Between the upper chamber 110 and the lower chamber 170, there are two flow path forming plates 130 and 150 for injecting and exhausting gas, and a sealing member for preventing gas leakage between the flow path forming plates ( 120, 140, 160 are formed.

An optical window is formed in the upper chamber 110 so that a laser beam may be transmitted, and an O ring is formed between the optical window and the upper chamber 110 to prevent gas leakage. In addition, since gas must be injected into a predetermined empty space (inside the chamber) below the optical window, gas moves to the lower portion of the optical window of the flow path forming plates 130 and 150 and the sealing members 120, 140 and 160. Holes are formed to allow.

3 is a detailed configuration diagram of the upper chamber 110. As shown in FIG. 3, the upper chamber 110 is connected to the thin film deposition metal raw material storage unit 200 to supply the thin film deposition metal raw material. It is connected to the metal raw material injection port 111, the protective film gas supply unit 500 for supplying the protective film gas injection port 112 for supplying the protective film gas, the thin film deposition gas supply unit 400 to supply the thin film deposition gas Two high-pressure gas inlets (113: 113a, 113b), two exhaust ports (114: 114a, 114b) for discharging the residual metal and gas generated after the thin film deposition, and an optical window for transmitting a laser beam is formed have. And a plurality of fastening holes are formed. Since the fastening hole is not directly related to the formation of the flow path of the present invention, reference numerals are omitted.

4 is a detailed configuration diagram of the first sealing member 120, and FIG. 5 is a detailed configuration diagram of the first flow path forming plate 130, and as shown, the first sealing member 120 and the first flow path. The formation plate 130 is formed with the same flow path.

As shown in FIG. 4, the first sealing member 120 may include a first metal raw material supply passage 121 for supplying a metal raw material supplied through the metal raw material injection hole 111 under the optical window, and a gas injection hole for a protective film ( The first passivation layer gas supply passage 122 is formed to supply the passivation layer gas supplied through the optical window 112 under the optical window.

As shown in FIG. 5, the first flow path forming plate 130 is configured to supply a metal raw material supplied through the metal raw material injection hole 111 under the optical window, similarly to the first sealing member 120. The metal raw material supply passage 131 and the second protective film gas supply passage 132 for supplying the protective film gas supplied through the protective film gas injection port 112 under the optical window are formed.

That is, the gas injected into the upper chamber 110 is moved to the empty space directly under the optical window by the gas supply passages 122 and 132 for the protective film as described above, and deposits a metal thin film by laser when irradiating a laser beam. To correct the defect or to deposit a protective film.

FIG. 6 is a plan view of the first flow path forming plate 130, and FIG. 7 is a cross-sectional view taken along line AA of FIG. 6, and as shown, a second metal raw material supply channel 131 and a gas supply channel for the second passivation layer. 132 is connected to a circular flow path, and a hole is formed inside the circular flow path. At this time, r1 represents the diameter of the hole in the circular flow path, r3 represents the diameter of the circular flow path, and r2 represents the boundary a between the circular flow path and the hole.

As shown in FIG. 7, the thickness A corresponding to r1 and r2 is formed to be shallower than the thickness r3 of the circular flow path, so that the introduced gas naturally moves to the hole r1 due to the pressure caused by the step. The gas injected into the empty space under the optical window is collected. In the drawing, the gas is moved only by the pressure difference, but the gas may be moved more easily by making a groove in the boundary (a) of FIG.

FIG. 8 is a detailed configuration diagram of the second sealing member 140, and FIG. 9 is a detailed configuration diagram of the second flow path forming plate 150. As illustrated, the second sealing member 140 and the second flow path are illustrated. The formation plate 150 is formed with the same flow path.

As shown in FIGS. 8 and 9, the second sealing member 140 may include the thin film deposition gas supply unit so that the metal raw material supplied through the thin film deposition metal raw material storage unit 200 may be isolated from the outside atmosphere. First high-pressure gas supply passages 141 and 151 for transferring the thin film deposition gas supplied from the chamber 400 into the chamber, and the thin film deposition metal raw material particles supplied through the thin film deposition metal raw material storage unit 200 are optical windows. Second high pressure gas supply passages 142 and 152 for supplying thin film deposition gas to the optical window to prevent deposition on the first window, and first discharge passages 143 and 153 for discharging residual metal and gas generated after thin film deposition are formed. It is.

In addition, holes 151a, 152a, and 153a are formed at ends of the flow paths 151, 152, and 153 formed in the second flow path forming plate 150, so that the gas introduced through the flow path may move to the concentric flow path of the lower chamber 170. .

That is, some of the high pressure gas is injected through the first high pressure gas inlet 113a to move into the chamber through the first high pressure gas supply passages 141 and 151, and the gas moved through the first high pressure gas supply passages 141 and 151 is Air curtain is formed to block air from outside.

In addition, a portion is injected through the second high pressure gas inlet 113b of the upper chamber 110 and moved into the chamber through the second high pressure gas supply passages 142 and 152 to prevent the thin film from being deposited on the optical window. Sprayed in the window direction. If a metal thin film is deposited on the optical window, the laser does not penetrate well, and the efficiency may be reduced to prevent this.

The first discharge passages 143 and 153 are connected to the first exhaust port 114a of the upper chamber 110, so that most of the residual gas not participating in the deposition after thin film deposition is first along the first discharge passages 143 and 153. It is discharged to the exhaust part 600 through the exhaust port 114a.

A plurality of gas injection holes are formed in the concentric circular flow paths of the third sealing member 160 and the lower chamber 170 which will be described later, and the injected high pressure gas is injected to the outside through these gas injection holes to form an air curtain to Shut off the inside of the chamber. The formation of the air curtain can form a virtual closed space. Accordingly, in the process of depositing the metal particles on the object P such as the substrate, it is possible to prevent the pure metal from being deposited due to impurities such as oxygen or nitrogen contained in the atmosphere. In addition, there is an advantage that can be used in the air by using the air curtain gas injection method.

On the back surface of the second flow path forming plate 150, three concentric flow paths and a second discharge flow path 164 for discharging residual metal and gas generated after thin film deposition are formed. The second discharge passage 164 is connected to the second exhaust port 114b formed in the upper chamber 110 so that residual gas is discharged. Most of the residual gas is discharged through the first exhaust port 114a, but some of the residual gas that is not discharged is discharged to the exhaust unit 600 through the second exhaust port 114b.

FIG. 10 is a detailed configuration diagram of the third sealing member 160. As illustrated, the third sealing member 160 has a first concentric circular flow path 161 having the same shape as a rear surface of the second flow path forming plate 150. ), A second concentric channel 162, and a third concentric channel 163 are formed, and a second discharge channel 164 connected to the third concentric channel 163 is formed.

The first, second, and third sealing members 120, 140, and 160 may be used in various ways as materials for preventing gas leakage, and polytetrafluoroethylene (PTFE) is preferably used.

11A and 11B are top views of the lower chamber 170. As shown in the lower chamber 170, three concentric flow paths, preferably a first chamber concentric flow path 171, a second chamber concentric flow path 172, A third chamber concentric flow path 173 is formed, and a plurality of holes (gas injection port and gas suction port) are formed in the concentric flow path.

In addition, a hole is formed in the first chamber concentric flow path 171, and a plurality of purge gas injection holes 174 are formed in the hole.

The metal raw material supply passage 131 and the protective film gas supply passage 132 of the first flow passage forming plate 130 are formed up to the first chamber concentric flow passage 171. The first discharge path 153 of the second flow path forming plate 150 is also formed up to the first chamber concentric flow path 171 so that the residual gas after the thin film deposition is discharged through the first discharge path 153 to the first exhaust port 114a. Can be discharged.

The first high pressure gas supply passage 151 of the second flow path forming plate 150 is formed up to the second chamber concentric flow path 172, and the gas injected up to the second chamber concentric flow path 172 is the second chamber concentric flow path. Strongly injected to the outside of the chamber through the purge gas injection port 175 formed in the 172, the injected gas is again formed in the first chamber concentric flow path 171 and the third chamber concentric flow path 173 (gas inlet As it is sucked into), air curtain is formed.

When the air is sucked in by using the pump in the exhaust part 600, it is formed in the lower chamber to suck the by-products, the high pressure gas, and the gas in the atmosphere existing in the space between the object P and the chamber. The first and second discharge passages 153 and 164 may be moved along the discharge ports 114a and 114b.

In this case, a plurality of purge gas injection holes are formed in the second chamber concentric flow path 172 of the lower chamber, so that a large amount of metal particles, high pressure gas, and gas in the atmosphere can be discharged in a uniform and fast time, and the first chamber The plurality of gas suction ports formed in the concentric flow path 171 and the third chamber concentric flow path 173 are preferably larger than the gas injection holes of the second chamber concentric flow path 172.

In addition, the purification gas inlet 174 is connected to the second high pressure gas supply passage 152 of the second flow path forming plate 130, the injected high pressure gas is injected into the optical window.

FIG. 12 is a cross-sectional view taken along the line BB of FIG. 11B, in which the gas introduced into the second high pressure gas supply passage 152 is injected into the optical window through the purification gas injection port 174 and the purification gas injection port 175. do.

The purge gas injection port 175 is formed obliquely, it is preferable that the purge gas injection port 175 is formed about 65 degrees. In the drawing, 153 denotes a first discharge passage, 151 denotes a first high pressure gas supply passage, and 164 denotes a second discharge passage.

Some of the injected high pressure gas is injected into the object P such as a substrate through the first high pressure gas supply passage 151 and sucked into the first discharge passage 153 or the second discharge passage 164 to form an air curtain. Done.

FIG. 13 is a flowchart illustrating a thin film deposition method according to an embodiment of the present invention. As shown in FIG. 13, a chamber 100 is disposed at a predetermined interval on the thin film deposition object P (S100). After supplying the thin film deposition metal raw material to the chamber 100 by using the thin film deposition gas (S200), a laser is irradiated to the chamber to deposit a thin film (300).

Thereafter, after supplying the protective film raw material to the chamber using the gas for the protective film (S400), by irradiating a laser to the chamber to deposit a protective film (S500), the gas remaining after the deposition to the first discharge passage of the chamber ( 153 and the second discharge passage 164 is discharged (S600).

 As described above, according to the present invention, it is possible to provide a thin film deposition apparatus in which a metal material for thin film deposition and a flow path for raw material injection for protective film deposition are separately formed. Therefore, using the thin film deposition apparatus as described above, it is possible to protect the metal thin film by depositing a protective film after thin film deposition.

In addition, according to the present invention, by providing a flow path forming plate in the chamber, it is possible to control the flow path of the injection gas injected into the chamber according to the purpose and function of the gas flow path.

According to the present invention, gas leakage can be prevented by inserting and bonding the sealing member in which the flow path of the same shape was formed between two flow path forming plates formed in the chamber.

As described above and described with reference to a preferred embodiment for illustrating the technical idea of the present invention, the present invention is not limited to the configuration and operation as shown and described as described above, it is a deviation from the scope of the technical idea It will be understood by those skilled in the art that many modifications and variations can be made to the invention without departing from the scope of the invention. Accordingly, all such suitable changes and modifications and equivalents should be considered to be within the scope of the present invention.

Claims (20)

A chamber spaced apart from the thin film deposition object P at predetermined intervals, the chamber having an optical window and a hole, which is an empty space for accommodating a high pressure gas, formed below the optical window; Thin film deposition metal raw material storage unit for storing the thin film deposition metal raw material; When forming a metal thin film on the object, a protective film raw material storage unit for storing a protective film raw material for forming a protective film or insulating film on top of the metal thin film; A thin film deposition gas supply unit supplying a thin film deposition gas to the thin film deposition metal raw material storage unit to supply the thin film deposition metal raw material to the chamber; A protective film gas supply unit supplying a protective film gas to the protective film raw material storage unit to supply the protective film raw material to the chamber; The thin film is deposited on the object P by irradiating a laser to the chamber where the thin film deposition metal raw material is supplied by the thin film deposition gas supply unit, and the laser is supplied to the chamber where the raw material for the protective film is supplied by the protective gas gas supply unit. A laser irradiation device (R) for depositing a protective film on the metal thin film by irradiating; And An exhaust unit connected to the chamber for pumping the metal raw material and the high pressure gas supplied thereto; Including but not limited to: The chamber is formed of a detachable upper chamber and a lower chamber, and between the upper chamber and the lower chamber, a thin film deposition gas including a thin film deposition metal raw material and a protective film gas including a protective film material. A first flow path forming plate and a second flow path forming plate having a flow path for supplying P) and for discharging residual metal and gas generated after thin film deposition; and the first and second flow path forming plates, an upper chamber, and a lower part. The first sealing member, the second sealing member and the third sealing member formed at the connection portion of the chamber, wherein the thin film deposition gas and the protective film gas is injected to the lower chamber through the hole (hole), the laser beam Atmospheric pressure thin film deposition apparatus using a laser, characterized in that supplied to the object (P) through. delete The method of claim 1, The first flow path forming plate may include a metal raw material supply path for transferring the thin film deposition metal raw material supplied through the metal raw material injection hole, and a gas supply channel for the protective film for transferring the gas for the protective film supplied through the gas injection hole for the protective film. Atmospheric thin film deposition apparatus using a laser, characterized in that. The method of claim 1, The second flow path forming plate transfers the thin film deposition gas supplied from the thin film deposition gas supply unit into the chamber so that the thin film deposition metal raw material supplied through the thin film deposition metal raw material storage unit can be isolated from the outside atmosphere. The first high pressure gas supply passage and the second high pressure for transporting the thin film deposition gas to the optical window in order to prevent the metal material supplied through the thin film deposition metal material storage to be deposited as a thin film on the optical window of the chamber An atmospheric pressure thin film deposition apparatus using a laser, characterized in that a gas supply passage and a first discharge passage for discharging residual metal and gas generated after thin film deposition are formed. The method of claim 3, wherein The first flow path forming plate has a circular flow path connected to the metal raw material supply flow path and the protective film gas supply flow path, and a circular flow path is formed inside the circular flow path so that the supplied gas can move to an empty space inside the chamber. The hole is formed, the atmospheric pressure thin film deposition apparatus using a laser, characterized in that the flow path for gas flow is formed between the circular flow path and the hole. The atmospheric pressure thin film deposition apparatus using a laser according to claim 5, wherein a thickness of the flow path between the circular flow path and the hole is smaller than a thickness of the circular flow path. 6. The atmospheric thin film deposition apparatus using a laser according to claim 5, wherein a boundary is formed between the circular flow path and the hole, and a gap through which a gas can move is formed at the boundary. 5. The atmospheric thin film deposition using a laser according to claim 4, wherein holes are formed at ends of the first high pressure gas supply channel, the second high pressure gas supply channel, and the first discharge channel in the second flow path forming plate. Device. The atmospheric thin film deposition apparatus of claim 1, wherein a first sealing member having a flow path having the same shape as that of the first flow path forming plate is formed between the upper chamber and the first flow path forming plate. 2. The atmospheric pressure thin film deposition using a laser according to claim 1, wherein a second sealing member having a flow path having the same shape as that of the second flow path formation plate is formed between the first flow path formation plate and the second flow path formation plate. Device. delete 2. The atmospheric pressure thin film deposition apparatus using a laser according to claim 1, wherein a third sealing member is formed between the second flow path forming plate and the lower chamber with a flow path identical to a rear surface of the second flow path forming plate. . delete delete delete The atmospheric pressure thin film deposition apparatus using a laser according to claim 4, wherein the second high pressure gas supply passage is formed so as to communicate with the purification gas injection port. delete delete The atmospheric pressure thin film deposition apparatus according to any one of claims 9, 10 and 12, wherein the sealing member is made of polytetrafluoroethylene (PTFE). delete

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